Patent Application
20200191105
The present invention claims priority under 35 U.S.C. ยง 119 to Japanese Patent Application No. 2018-234459, filed on Dec. 14, 2018, the entire content of which is incorporated herein by reference.
The present invention relates to a fuel injection valve driving device.
For example, Japanese Patent Publication No. 6383760 discloses a control device of an internal combustion engine provided with a fuel injection valve with a solenoid. The control device disclosed in Japanese Patent Publication No. 6383760 is used to control the internal combustion engine by driving the solenoid of the fuel injection valve and includes a plurality of switching elements for switching a power supplying state from a booster circuit or a battery to the solenoid.
In Japanese Patent Publication No. 6383760, the timing when the valve body comes into contact with the valve seat due to the interruption of the current supplied to the solenoid is detected on the basis of a voltage between a ground potential side terminal of the solenoid and a ground potential.
Incidentally, in Japanese Patent Publication No. 6383760, a recirculation path for returning a counter electromotive current output from the solenoid from the ground to the solenoid through a diode is provided and a diode is provided in the recirculation path. For this reason, since the Vf of the diode changes due to environmental factors such as a counter electromotive current and a temperature, the voltage between the ground potential side terminal of the solenoid and the ground potential changes and hence a valve closed state cannot be accurately detected.
The present invention has been made in view of the above-mentioned problems and an object thereof is to more accurately detect closing of a fuel injection valve using a change in voltage of one terminal of a solenoid in a fuel injection valve driving device with the solenoid.
The present invention employs the following configuration for solving the above-mentioned problems.
According to a configuration of a first aspect, a fuel injection valve driving device for driving a fuel injection valve with a solenoid, including: a first switching element which is disposed between a booster circuit boosting a battery power and one end of the solenoid; a second switching element which is disposed between a battery and one end of the solenoid; a third switching element which is disposed between the other end of the solenoid and a ground; a fourth switching element which is disposed between one end of the solenoid and a ground; and a control unit which is configured to control open/closed states of the first switching element, the second switching element, the third switching element, and the fourth switching element, wherein the control unit is configured to open the fourth switching element during a valve closing detection period of detecting closing of the fuel injection valve and to detect the closing of the fuel injection valve on the basis of a change in voltage of the other end of the solenoid.
According to a second aspect, in the first aspect, the control unit is configured to switch the fourth switching element from a closed state to an open state after detecting that the first switching element and the second switching element are closed.
According to a third aspect, in the first or second aspect, the control unit is configured to switch the first switching element or the second switching element from a closed state to an open state after detecting that the fourth switching element has been switched from an open state to a closed state.
According to a fourth aspect, in any one of the first to third aspects, the fourth switching element is a field effect transistor, and the control unit is configured to detect that the fourth switching element is closed on the basis of a gate voltage of the fourth switching element.
According to a fifth aspect, in any one of the first to fourth aspects, the closed state of the first switching element and the second switching element is detected on the basis of a voltage of a wiring on the side of the solenoid commonly connected to the first switching element and the second switching element.
According to a sixth aspect, in any one of the first to fourth aspects, the first switching element and the second switching element are field effect transistors, and the control unit is configured to detect that the first switching element or the second switching element is closed on the basis of a voltage of a wiring connected to a gate terminal of the first switching element and a gate terminal of the second switching element.
According to a seventh aspect, in any one of the first to sixth aspects, the fuel injection valve driving device further includes an overcurrent detecting resistor which is disposed between a connection position between a source terminal of the first switching element and a source terminal of the second switching element and a connection position between one end of the solenoid and a drain terminal of the fourth switching element.
According to the above aspects, since the first switching element and the second switching element are closed and the fourth switching element is opened, the counter electromotive current occurring in the solenoid can be returned to the solenoid and one end side of the solenoid is clamped to a reference potential of the ground. As a result, it is possible to more accurately detect the closing of the fuel injection valve as compared with a case in which one end side is not clamped to the reference potential. Thus, according to the above aspects, it is possible to more accurately detect the closing of the fuel injection valve by a change in voltage of one end side terminal of the solenoid in the fuel injection valve driving device with the solenoid.
Hereinafter, an embodiment of a fuel injection valve driving device according to the present invention will be described with reference to the drawings.
As shown in
The booster circuit 1 is a chopper circuit which boosts power input from a battery mounted on a vehicle to a predetermined target voltage. This booster circuit 1 has a boost ratio of, for example, about 2 to 10 and is controlled by a boost control unit 8a in the control unit 8.
The first semiconductor switch 2, the second semiconductor switch 3, the third semiconductor switch 4, and the fourth semiconductor switch 5 are field effect transistors, gate terminals thereof are connected to the control unit 8, and an open/close stated can be controlled by the control unit 8. In the embodiment, each of the first semiconductor switch 2, the second semiconductor switch 3, the third semiconductor switch 4, and the fourth semiconductor switch 5 uses a MOS transistor and has a parasitic diode as shown in
The first semiconductor switch 2 is disposed between an output end of the booster circuit 1 and one end of the solenoid L (more precisely, one end of the solenoid coil). That is, in this first semiconductor switch 2, a drain terminal is connected to the output end of the booster circuit 1, a source terminal is connected to one end of the solenoid L, and a gate terminal is connected to an Ipeak control unit 8b of the control unit 8. The open/closed state of the first semiconductor switch 2 is controlled by the Ipeak control unit 8b.
The second semiconductor switch 3 is disposed between the battery and one end of the solenoid L (one end of the solenoid coil). That is, in this second semiconductor switch 3, a drain terminal is connected to the battery through the backflow preventing diode 7, a source terminal is connected to one end of the solenoid L, and a gate terminal is connected to an Ihold control unit 8c of the control unit 8. The open/closed state of such a second semiconductor switch 3 is controlled by the Ihold control unit 8c.
The third semiconductor switch 4 is disposed between the other end of the solenoid L (the other end of the solenoid coil) and a ground G (a reference potential). That is, in this third semiconductor switch 4, a drain terminal is connected to the other end of the solenoid L, a source terminal is connected to the ground G through the current detecting resistor 6, and a gate terminal is connected to an INJ switch control unit 8d of the control unit 8. The open/closed state of such a third semiconductor switch 4 is controlled by the INJ switch control unit 8d.
The fourth semiconductor switch 5 is disposed between one end of the solenoid L (one end of the solenoid coil) and the ground G. That is, in this fourth semiconductor switch 5, a drain terminal is connected to one end of the solenoid L, a source terminal is connected to the ground G, and a gate terminal is connected to a recirculation control unit 8e of the control unit 8. The open/closed state of such a fourth semiconductor switch 5 is controlled by the recirculation control unit 8e.
The current detecting resistor 6 is a current detecting resistor of which one end is connected to a source terminal of the third semiconductor switch 4 and the other end is connected to the ground G. That is, the current detecting resistor 6 is connected in series to the solenoid L (the solenoid coil) through the third semiconductor switch 4 and an energizing driving current flows to the solenoid L. In such a current detecting resistor 6 a voltage (a detection voltage) is generated in response to the magnitude of the driving current flowing across one end and the other end of the current detecting resistor 6.
Further, in the backflow preventing diode 7, a cathode terminal is connected to a drain terminal of the second semiconductor switch 3 and an anode terminal is connected to the output end of the battery. This backflow preventing diode 7 is an auxiliary component which is provided to prevent an output current of the booster circuit 1 from flowing to the output end of the battery through the second semiconductor switch 3 when any one of the first semiconductor switch 2 and the second semiconductor switch 3 is brought into an open state or through the parasitic diode of the second semiconductor switch 3 when only the second semiconductor switch 3 is in an off state (a closed state).
The control unit 8 is an integrated circuit (IC) which controls the booster circuit 1, the first semiconductor switch 2, the second semiconductor switch 3, the third semiconductor switch 4, and the fourth semiconductor switch 5, on the basis of a command signal input from a host control system. This control unit 8 includes the boost control unit 8a, the Ipeak control unit 8b, the Ihold control unit 8c, the INJ switch control unit 8d, the recirculation control unit 8e, a current detecting unit 8f, a voltage detecting unit 8g, and a valve closing detecting unit 8h, as functional units.
The boost control unit 8a generates a boost control signal (a PWM signal) for controlling the operation of the booster circuit 1 and outputs the signal to the booster circuit 1. The Ipeak control unit 8b generates a first gate signal for controlling the first semiconductor switch 2 and outputs the first gate signal to a gate terminal of the first semiconductor switch 2. The Ihold control unit 8c generates a second gate signal for controlling the second semiconductor switch 3 and outputs a second gate signal to a gate terminal of the second semiconductor switch 3. The INJ switch control unit 8d generates a third gate signal for controlling the third semiconductor switch 4 and outputs the third gate signal to a gate terminal of the third semiconductor switch 4. The recirculation control unit 8e generates a fourth gate signal for controlling the fourth semiconductor switch 5 and outputs the fourth gate signal to a gate terminal of the fourth semiconductor switch 5.
The current detecting unit 8f includes a pair of input ends, one input end is connected to one end of the current detecting resistor 6, and the other input end is connected to the other end of the current detecting resistor 6. That is, a detection voltage generated in the current detecting resistor 6 is input to this current detecting unit 8f. Such a current detecting unit 8f detects (calculates) the magnitude of the driving current on the basis of the detection voltage.
The voltage detecting unit 8g is connected to the gate terminal of the fourth semiconductor switch 5 and detects a gate voltage of the fourth semiconductor switch 5. The voltage detecting unit 8g outputs the gate voltage of the fourth semiconductor switch 5 to the Ipeak control unit 8b and the Ihold control unit 8c. Further, as shown in
In the boost regeneration diode 10, a cathode is connected to the output end of the booster circuit 1 and an anode is connected to a drain terminal of the third semiconductor switch 4 and the other end of the solenoid L. The overcurrent detecting resistor 11 is disposed in the middle of the common wiring portion 9. More specifically, the overcurrent detecting resistor 11 is disposed on the common wiring portion 9 between a connection position between the source terminal of the first semiconductor switch 2 and the source terminal of the second semiconductor switch 3 and a connection position between one end of the solenoid L and a drain terminal of the fourth semiconductor switch 5. Since such an overcurrent detecting resistor 11 is provided, it is possible to detect a short circuit failure of the fourth semiconductor switch 5 and a ground fault on one end side of the injector (one end side of the solenoid L) on the basis of a difference in voltage between both ends of the overcurrent detecting resistor 11.
The valve closing detecting unit 8h is connected to the other end of the solenoid L and detects the closing of the fuel injection valve on the basis of a change in voltage of the other end of the solenoid L during a valve closing detection period.
Such a counter electromotive force decreases with time and disappears after a certain period of time since the counter electromotive force is mainly consumed as heat when a return current flows to the ground G through the ground G, the fourth semiconductor switch 5, the parasitic diode of the fourth semiconductor switch 5, the solenoid L, the boost regeneration diode 10, the booster circuit 1, and the battery. Until such a difference in voltage disappears, a valve body of the fuel injection valve having been opened collides with a valve seat to be closed and a decreasing gradient of the difference in voltage changes when the valve body collides with the valve seat. For this reason, the valve closing detecting unit 8h detects the closing of the fuel injection valve by detecting a bending point (indicated by a dotted line) in the graph of
However, there is concern that a through current may occur due to the open state of both of the first semiconductor switch 2 or the second semiconductor switch 3 and the fourth semiconductor switch 5 as the fourth semiconductor switch 5 is installed. Therefore, in the fuel injection valve driving device S of the embodiment, the Ipeak control unit 8b and the Ihold control unit 8c switch the first semiconductor switch 2 or the second semiconductor switch 3 from the closed state to the open state after detecting that the fourth semiconductor switch 5 has been switched from the open state to the closed state on the basis of the gate voltage of the fourth semiconductor switch 5 input from the voltage detecting unit 8g.
Next, an operation of the fuel injection valve driving device S with such a configuration will be described with reference to
When the fuel injection valve is driven from the closed state to the open state by the fuel injection valve driving device S of the embodiment, the control unit 8 supplies the boosted voltage generated by the booster circuit 1 in an initial period T1 at the time of starting the driving to the solenoid L and supplies the battery voltage to the solenoid L in a holding period T2 after the initial period T1 as shown in
That is, in the initial period T1, the Ipeak control unit 8b outputs the first gate signal to the first semiconductor switch 2 so as to supply the boosted voltage generated by the booster circuit 1 to one end of the solenoid L (one end of the solenoid coil), and the INJ switch control unit 8d outputs the third gate signal to the third semiconductor switch 4 so as to connect the other end of the solenoid L (the other end of the solenoid coil) to the ground G through the current detecting resistor 6.
As a result, in the initial period T1, a high boosted voltage is supplied to the solenoid L so that a peak rising current flows to the solenoid L. Such a peak rising current speeds up the opening operation of the fuel injection valve.
Then, in the holding period T2, the Ihold control unit 8c outputs the second gate signal to the second semiconductor switch 3 so as to supply the battery power to one end of the solenoid L (one end of the solenoid coil), and the INJ switch control unit 8d outputs the third gate signal to the third semiconductor switch 4 so as to connect the other end of the solenoid L (the other end of the solenoid coil) to the ground G through the current detecting resistor 6.
As a result, in the holding period T2, the battery voltage is supplied to the solenoid L. Here, since the Ihold control unit 8c supplies a PWM signal of a predetermined duty ratio to the second semiconductor switch 3 as the second gate signal, the battery voltage is intermittently supplied to the solenoid L. Further, the duty ratio is set on the basis of the magnitude of the driving current detected by the current detecting unit 8f. That is, the Ihold control unit 8c performs a feed-back control so that the magnitude of the driving current is maintained at a predetermined target value by setting the duty ratio of the PWM signal on the basis of the magnitude of the driving current detected by the current detecting unit 8f.
As a result, a holding current that maintains a predetermined target value is supplied to the solenoid L so that the fuel injection valve is maintained in the open state. Further, the holding current can be gradually changed by changing the duty ratio of the holding period T2 in two stages.
Further, the fourth semiconductor switch 5 is opened during a period in which all of the first semiconductor switch 2 and the second semiconductor switch 3 are closed (a period in which all of the first gate signal and the second gate signal are low, that is, a voltage at which the semiconductor switch is closed or less) in the initial period T1 and the holding period T2. Furthermore, the third semiconductor switch 4 is maintained in the open state. As a result, the counter electromotive current occurring in the solenoid L flows to the ground G through the ground G, the fourth semiconductor switch 5, the parasitic diode of the fourth semiconductor switch 5, the solenoid L, the third semiconductor switch 4, and the current detecting resistor 6.
Further, in the fuel injection valve driving device S of the embodiment, a predetermined period after the supply of the driving current to the solenoid L is set as the valve closing detection period and in this period, all of the first semiconductor switch 2, the second semiconductor switch 3, and the third semiconductor switch 4 are closed and the fourth semiconductor switch 5 is opened. During this time, since the voltage of the other end of the solenoid L changes with time, the valve closing detecting unit 8h of the control unit 8 detects the closing of the fuel injection valve on the basis of a change in voltage of the other end of the solenoid L.
In the fuel injection valve driving device S of the embodiment described above, since the first semiconductor switch 2 and the second semiconductor switch 3 are closed and the fourth semiconductor switch 5 is opened, the counter electromotive current occurring in the solenoid L can be returned to the solenoid L and one end side of the solenoid L is clamped to the reference potential of the ground. As a result, since a change in voltage of the solenoid L occurs only at the other end side of the solenoid L, it is possible to more accurately detect the closing of the fuel injection valve as compared with a case in which one end side is not clamped to the reference potential.
Further, in the fuel injection valve driving device S of the embodiment, the control unit 8 switches the first semiconductor switch 2 or the second semiconductor switch 3 from the closed state to the open state after detecting that the fourth semiconductor switch 5 has been switched from the open state to the closed state. For this reason, it is possible to prevent a through current from flowing from the booster circuit 1 or the battery to the ground G when the fourth semiconductor switch 5 is switched from the open state to the closed state and the first semiconductor switch 2 or the second semiconductor switch 3 is switched from the closed state to the open state.
Further, in the fuel injection valve driving device S of the embodiment, the fourth semiconductor switch 5 is the field effect transistor and the control unit 8 detects that the fourth semiconductor switch 5 has been switched from the open state to the closed state on the basis of the gate voltage of the fourth semiconductor switch 5. For this reason, according to the fuel injection valve driving device S of the embodiment, it is possible to reliably detect the open/closed state of the fourth semiconductor switch 5.
Further, in the fuel injection valve driving device S of the embodiment, the control unit 8 switches the fourth semiconductor switch 5 from the closed state to the open state after detecting that the first semiconductor switch 2 and the second semiconductor switch 3 are closed. For this reason, it is possible to prevent a through current from flowing from the booster circuit 1 or the battery to the ground G when the first semiconductor switch 2 or the second semiconductor switch 3 is switched from the open state to the closed state and the fourth semiconductor switch 5 is switched from the closed state to the open state.
Further, in the fuel injection valve driving device S of the embodiment, the first semiconductor switch 2 and the second semiconductor switch 3 are the field effect transistors and the control unit 8 detects that the first semiconductor switch 2 and the second semiconductor switch 3 are closed on the basis of the voltage of the common wiring portion 9 connected to the source terminal of the first semiconductor switch 2 and the source terminal of the second semiconductor switch 3. The voltage of the common wiring portion 9 decreases when both of the first semiconductor switch 2 and the second semiconductor switch 3 are closed. For this reason, it is possible to reliably detect that both of the first semiconductor switch 2 and the second semiconductor switch 3 are closed on the basis of the voltage of the common wiring portion 9.
Further, according to the fuel injection valve driving device S of the embodiment, when the fourth semiconductor switch 5 is opened, one end of the solenoid L is clamped to the reference potential. For this reason, when the control unit 8 has a built-in single-end amplifier that takes the reference potential and the other end of the solenoid L having a change in voltage, the closing of the valve can be detected by the output from the single-end amplifier. For example, in Japanese Patent Publication No. 6383760 described above, an active filter is configured by installing a large differential amplifier with a high withstand voltage outside the control unit in order to more accurately detect the closing of the valve. In contrast, according to the fuel injection valve driving device S of the embodiment, since it is possible to accurately detect the closing of the valve using the single-end amplifier built into the control unit 8, there is no need to install a large differential amplifier separately from the control unit 8. As a result, it is possible to realize a decrease in size of the device.
As described above, a preferred embodiment of the present invention has been described with reference to the accompanying drawings, but it is needless to mention that the present invention is not limited to the above-mentioned embodiment. A combination of the components shown in the above-mentioned embodiment is an example and can be modified into various forms on the basis of the design requirements or the like in a scope not departing from the spirit of the present invention.
For example, in the above-mentioned embodiment, the counter electromotive force is mainly consumed as heat due to the boost regeneration diode 10 and the solenoid L in the recirculation path. Furthermore, this is also possible with an active clamp circuit including a Zener diode and a diode provided between the drain terminal and the gate terminal of the third semiconductor switch 4.
Furthermore, the slope of the bending point of the graph of
Further, the fourth semiconductor switch 5 is opened after detecting that the voltage of the common wiring portion 9 has decreases (the first semiconductor switch 2 and the second semiconductor switch 3 are closed), but the fourth semiconductor switch 5 may be opened after detecting that the gate voltage of the first semiconductor switch 2 and the gate voltage of the second semiconductor switch have become equal to or smaller than a voltage at which the semiconductor switch is closed (the first semiconductor switch 2 and the second semiconductor switch 3 are closed).
For example, in the period T2 of
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-234459 | Dec 2018 | JP | national |
