Claims
- 1. A hard carbon material having a density greater than 2.3 g/cm3 and a hardness from 1.0 Gpa to 50 Gpa formed by the process of:a) providing a fullerene based carbon powder comprising at least 99% single walled nanotubes, b) agglomerating said fullerene based carbon powder to a density above 1.4 g/cm3; c) subjecting said fullerene based carbon powder to a pressure of 1.0 to 10.0 Gpa, a temperature of from 300-1000° C. for a period of time from 1 to 10000 seconds.
- 2. The carbon material as claimed in claim 1, wherein the fullerene based powder comprises at least 99.9% single walled nanotubes.
- 3. The carbon material as claimed in claim 1, wherein the pressure is at least 2.5 GPa, the temperature is at least 500° C., and the period of time is at least 1000 seconds.
- 4. The carbon material as claimed in claim 1, wherein the fullerene based powder comprises 0.0001 to 1.0% of a dopant to effect the electrical properties of the material.
- 5. The carbon material as claimed in claim 4, wherein the dopant is selected from the group consisting of hydrogen, boron, nitrogen, oxygen, sulphur, fluorine, and chlorine.
- 6. A process for forming a high density sintered conductive carbon material, having a hardness from 1.0 Gpa to 50 Gpa, comprising the steps of:a) providing an fullerene based carbon powder having at least 99.9% by weight of single walled nanotubes, b) agglomerating said fullerene based carbon powder to a density above 1.4 g/cm3; c) subjecting said fullerene based carbon powder to pressure of 1.0 to 10.0 Gpa, a temperature of from 300-1000° C. for a period of time of from 1 to 10000 seconds.
- 7. The process as claimed in claim 6, further including the steps of infiltrating said fullerenes by superplastic flow under temperature and pressure into a porous composite material and said subjecting step takes place after said fullerene based carbon powder has been infiltrated into the porous material.
- 8. The process as claimed in claim 7, wherein the superplastic flow takes place at temperatures of 200-400° C. at pressures of 0.1-1.0 Gpa.
- 9. The process as claimed in claim 6, wherein the fullerene based carbon powder comprises 0.0001 to 1.0% of a dopant to effect the electrical properties of the material.
- 10. A conductive hard, high density carbon material comprising at least 99.9% by weight of single walled nanotubes subjected to heat, temperature and pressure sufficient to provide a hardness to the material of at least 1.0 Gpa and less than 50 Gpa with a resistivity of less than 10 ohms-cm and a density above 2.3 g/cm3.
- 11. The material as claimed in claim 10, further including 0.0001 to 1.0% of a dopant to effect the electrical properties of the material.
- 12. A process for forming a high density sintered conductive carbon material, having a hardness from 1.0 Gpa to 50 Gpa, comprising the steps of:a) providing an fullerene based carbon powder having at least 99.9% buckyballs b) agglomerating said fullerene based carbon powder to a density above 1.4 g/cm3; c) subjecting said fullerene based carbon powder to pressure of 1.0 to 10.0 Gpa, a temperature of from 300-1000° C. for a period of time of from 1 to 10000 seconds; d) providing an alloy used to convert carbon materials to diamond, and e) subjecting said carbon material to a pressure of 7.0 to 9.0 Gpa, a temperature of from 800-1300° C. for a period of time from 0.1 to 100 seconds to convert the carbon material to polycrystalline diamond.
- 13. The process as claimed in claim 12, wherein the alloys are based on at least one of Ni, Fe and Co.
- 14. A process for forming a high density sintered conductive carbon material, having a hardness from 1.0 Gpa to 50 Gpa, comprising the steps of:a) providing an fullerene based carbon powder having at least 99.9% buckyballs b) agglomerating said fullerene based carbon powder to a density above 1.4 g/cm3; c) subjecting said fullerene based carbon powder to pressure of 1.0 to 10.0 Gpa, a temperature of from 300-1000° C. for a period of time of from 1 to 10000 seconds; d) providing a metal alloy selected form the group comprising aluminum, magnesium and calcium alloys; and e) subjecting said carbon material to a pressure of 2.5 to 9.0 Gpa, a temperature of from 400-1300° C. for a period of time from 10 to 1000 seconds to convert the carbon material to monocrystalline diamond.
- 15. A process for forming a high density sintered conductive carbon material, having a hardness from 1.0 Gpa to 50 Gpa, comprising the steps of:a) providing an fullerene based carbon powder having at least 99% fullerenes, b) agglomerating said fullerene based carbon powder to a density above 1.4 g/cm3; c) infiltrating said fullerenes by superplastic flow under temperature and pressure into a porous composite material; and c) subjecting said infiltrated composite material to pressure of 1.0 to 10.0 Gpa, a temperature of from 300-1000° C. for a period of time of from 1 to 10000 seconds.
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims priority of U.S. provisional application Ser. No. 60/100,078 filed Sep. 14, 1998.
STATEMENT OF GOVERNMENT SUPPORT OF THE INVENTION
The work resulting in this invention was supported by the Defense Advanced Projects Agency (DARPA). Defense Small Business Innovation Research Program ARPA order No. D611, Amdt 27 issued by U.S. Army Aviation and Missile Commander under Contract DAAH01-98CR008.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/US99/21174 |
|
WO |
00 |
Publishing Document |
Publishing Date |
Country |
Kind |
WO00/15548 |
3/23/2000 |
WO |
A |
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
6245312 |
Blank et al. |
Jun 2001 |
B1 |
Non-Patent Literature Citations (3)
Entry |
Blank et al. “Phase transformations in solid C60 at high-pressure-high-temperature treatment and the structure of 3D polymerized fullerites” Sep. 1996, Physics Letters A, vol. 220, pp. 149-157.* |
Kozlov et al. “Transformation of C60 fullerenes into a superhard form of carbon at moderate pressure” Mar. 6, 1995, Applied Physics Letters, vol. 66, No. 10, pp. 1199-1201.* |
Hirai et al. “Changes in structure and electronic state from C60 fullere to amorphous diamond” Jun. 1, 1995, Physical Review B vol. 51, No. 21, pp. 15555-15558. |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/100078 |
Sep 1998 |
US |