FULLY-PRINTED CARBON NANOTUBE THIN FILM TRANSISTOR CIRCUITS FOR ORGANIC LIGHT EMITTING DIODE

Abstract

The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

Description

BACKGROUND

Technical Field

The subject application relates to a method for printing carbon nanotube thin-film transistor circuits, and in particular for printing transistor circuits for use in driving organic light emitting diodes (OLEDs).

INTRODUCTION

Compared to liquid crystal displays (LCDs) organic light emitting diodes (OLEDs) are low cost, light weight and provide flexible plastic substrate compatibility. Additionally, OLEDs can provide wider viewing angles, enhanced brightness, greater power efficiency and shorter response times.

SUMMARY

In some aspects, the subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer of electrodes comprises a source electrode and a drain electrode, and printing a film comprising carbon nanotubes on the substrate between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and the drain electrode. In certain implementations, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode, and disposing a dielectric material over exposed portions of the carbon nanotube film.

In yet another aspect, the subject technology relates to a transistor including a substrate, a first layer of electrodes formed on the substrate and comprising a source electrode and a drain electrode and a single-walled carbon nanotube film printed between the source electrode and the drain electrode and forming an interface between the carbon nanotube film and the source electrode and the carbon nanotube film and the drain electrode. In certain implementations, the transistor can further include a second layer of electrodes formed over the interface between the carbon nanotube film and the source electrode and the carbon nanotube film and the drain electrode, and a dielectric layer formed over the carbon nanotube film.

BRIEF DESCRIPTION OF THE DRAWINGS

Certain features of the subject technology are set forth in the appended claims. However, the accompanying drawings, which are included to provide further understanding, illustrate disclosed aspects and together with the description serve to explain the principles of the subject technology. In the drawings:

FIG. 1 depicts a schematic diagram of an example process for top gated CNT TFT fabrication printing, according to some aspects of the technology.

FIG. 2A illustrates examples of I_DS-V_DS family curves showing saturation behavior and linearity, according to some aspects.

FIG. 2B illustrates an example of I_SD-V_G family curves, according to some aspects.

FIG. 2C illustrates an example I_SD-V_G and corresponding gm-V_G curve at V_SD=1.0 V, according to some aspects.

FIG. 2D illustrates examples of electric property measurements for back gated TFTs connected to an external OLED, including I_OLED-V_G family curves, and an example circuit diagram, according to some aspects of the technology.

FIG. 2E illustrates an example of I_OLED-V_SS family curves, wherein the inset illustrates an example circuit diagram, according to some aspects of the technology.

FIGS. 3A and 3B conceptually illustrate examples of electric properties of top gated CNT TFTs on a Si/SiO₂ wafer with ambipolar behavior, including I_SD-V_G family curves and I_DS-V_DS family curves, according to some aspects of the technology.

FIG. 3C illustrates an example of electric properties for one top gated CNT TFT on a Si/SiO₂ wafer with p-type behavior, according to some aspects of the subject technology.

FIG. 3D illustrates an example of I_SD-V_G family curves and I_DS-V_DS family curves for the top gated CNT TFT of FIG. 4C, according to some aspects of the technology.

FIG. 4A illustrates an example characterization of a 2T control circuit, including I_DD-V_Data family curves, according to some aspects of the technology.

FIG. 4B illustrates an example I_DD-Data curve in both linear plot and log plot, according to some aspects of the technology.

FIG. 4C illustrates an example characterization of a 2T control circuit connected to external an OLED, including I_DD-V_Data family curves according to some aspects of the technology.

DETAILED DESCRIPTION

The detailed description set forth below is intended as a description of various configurations of the subject technology and is not intended to represent the only configurations in which the subject technology can be practiced. The appended drawings are incorporated herein and constitute a part of the detailed description. The detailed description includes specific details for the purpose of providing a more thorough understanding of the subject technology. However, it will be clear and apparent that the subject technology is not limited to the specific details set forth herein and may be practiced without these specific details. In some instances, structures and components are shown in block diagram form in order to avoid obscuring the concepts of the subject technology.

In certain aspects, circuits contain only one switch thin-film transistor (TFT) and one storage capacitor (1T1C), as illustrated in the example of FIG. 1A. A more complicated control circuit includes one switch transistor and one driving transistor besides a storage capacitor e.g., 2T1C in FIG. 1B. This structure allows a longer data storage time as compared to that of the 1T1C circuit. Other types of OLED driving circuits can require more transistors to achieve longer data storage time, more uniform luminance within one matrix of pixels and less impact from pixel differential aging problem and current state (whether pixel is lit on or turned off) readout port. However, such driving circuits are more complicated to realize.

One advantage of the combination of printed electronics and semiconducting single walled carbon nanotubes (SWCNTs) is described herein for display electronics. In certain aspects, conductive silver ink and a 98% semiconductive SWCNT solution are used to print thin film transistors (TFTs) with high mobility, high on/off ratios and a high current carrying capacity. Combined with printed solid electrolyte (PEI with LiClO₄) as the gating material, these top gated devices are suitable current switches for OLEDs. An OLED driving circuit including two top gated fully printed transistors has been fabricated and the successful control over OLEDs has been demonstrated. In addition, a CNT TFT inverter has been fabricated. Frequency operation of single top gated fully printed transistors indicates the transistors described herein to be a viable technology for backplane display applications.

An OLED control circuit with a 2T1C structure is described herein as an example having a good compromise between more complex device structures and the shortfalls of the less complex 1 T1C control circuit. For simplicity and ease of demonstration, the 2T1C structure has been modified by removing the storage capacitor and fabricated 2T control circuit.

For OLED based displays, driving current up to 1˜5 μA/pixel is typically required for high resolution display. Commercial LED/OLED-based displays adopt low temperature polysilicon (LTPS) TFT or amorphous silicon (α-Si) TFTs for compatibility with mainstream silicon fabrication processes. However, they require high-temperature processing and suffer from low mobility (e.g., <1 Vs/cm²). Single-walled carbon nanotubes (SWCNTs) are ideal channel materials for TFTs due to their high mobility, high on/off ratio as well as small operation voltage. CNTs also allow for solution deposition fabrication routes. Due to the excellent current carrying capacity of SWCNTs, SWCNT TFTs can provide enough driving current for typical high-resolution OLED displays with a much smaller channel length and width, as well as operation voltage. Such advantages allow dense integration of pixels, higher aperture ratios, and smaller power consumption without sacrifice of brightness, resolution and/or response time.

As described herein, 98% separated semiconducting SWCNTs and printed electronics are used in the fabrication of fully printed back gated SWCNT TFTs. In some implementations, the mobilities of back gated SWCNT TFTs fall in the range of 10˜30 cm²/Vs, with the highest reaching 34.2 cm²/Vs. On/off ratio of the back gated devices varies between 10⁴˜10⁷ and the highest on/off ratio is 1.28×10⁷. Based on the success of fully printed back gated devices, fabricated printed top gated SWCNT TFTs with printed PEI/LiClO₄ as polymer electrolyte gating material were prepared. By varying PEI/LiClO₄ coverage, the device behavior was tunable to either ambipolar or p-type. A fully printed 2T single pixel OLED control circuit has also been demonstrated.

FIG. 1D shows the process of printing of both back gated and top gated SWCNT TFT on Si/SiO₂ wafer. Briefly, a commercial silver nanoparticles solution (Cabot Corp., CCI 300) is first printed to form source and drain electrodes, as well as gate pads to be used later for top gated TFT structures. A post sintering of the silver electrodes at 180° C. was performed to achieve a small resistance (e.g., ˜1 Ω/sq), as was measured by Van Der Pauw method. To improve the adhesion of SWCNT to Si/SiO₂ wafers, the wafers were functionalized by diluted aminopropyltriethoxy silane (APTES) by methods generally known in the art, before printing of the 98% semiconductive SWCNT solution (NanoIntegris Inc.) as active channel material. Subsequently, the devices were rinsed with DI water after the printed SWCNT solution dried out to remove the sodium dodecyl sulfate (SDS) residue. After SEM inspection of the CNT film to confirm the uniformity and desired CNT density, another layer of silver electrodes was added along the border of silver and SWCNT film, to improve the contact between silver electrodes and SWCNT networks. Electric property measurements were performed to inspect the performance of these SWCNT TFTs before printing of ion gel dielectric. Finally, PEI/LiClO₄ is printed as a top gate dielectric as well as gate electrode, expanding from the gate pad to the SWCNT film in the channel.

Uniformity and high density are two factors in the printed back gated TFTs. It also influences the success of turning a back gated TFT into a top gated TFT by adding a strip of ion gel dielectric. FIG. 2 shows details of the as printed back gated CNT TFT, especially the channel region.

In certain aspects, electric performance characterization can be carried out for the as-fabricated back gated devices. The W of the devices we studied approximately ranged from 100 μm to 500 μm, while L ranged from 10 μm to 200 μm. More accurate values of the W and L used in mobility derivation can be measured via FESEM. Most devices exhibit an I_on of 1˜10 μA (at drain voltage of 1.0 V and gate voltage of −20 V), I_on/I_off ratio of 10⁴˜10⁷, mobility of 10˜30 cm²/Vs and V_th of −5.0 V. For example, FIG. 2B-d illustrate example current-voltage characteristics (I-V) of one representative device with W=510.5 μm and L=88.8 μm.

One curve of transconductance versus gate voltage (V_G) is derived from and plotted together with the drain current (I_SD) versus gate voltage plot when drain voltage (V_SD) equals 1.0 V, as is shown in FIG. 2D. The I_DS-V_DS family curves display clear linear region (FIG. 2A), indicating an ohmic contacts formed between silver electrodes and CNT networks. Distinctive saturation behavior is observed when V_D becomes more negative, as is shown in FIG. 2B. I_D-V_G family curves measured in linear region (FIG. 2B) shows I_on of 9.0 μA at V_D=0.8 V and V_G=−20 V, corresponding to a current density of 0.037 ρA/μm. There is a clear cut off region and I_on/I_off is 1.28×10⁷.

Mobility can be calculated by:

$\mu =\frac{L}{W}\frac{1}{C_{\mathrm{ox}}V_D}\frac{I_D}{V_G},$

where L and W are the device channel length and width, V_D=1 V, I_D-V_G curve is measured at V_D=1 V, and C_ox is the gate capacitance per unit area. If the nanotube film is treated as a uniform and continuous film, a simple parallel model can be used to calculate C_ox:

$C_{\mathrm{ox}}=\frac{{\varepsilon }_0{\varepsilon }_{\mathrm{ox}}}{t_{\mathrm{ox}}}=6.90\times {10}^{-9}F/{\mathrm{cm}}^2,\mathrm{given}\mathrm{that}\mathrm{the}\mathrm{dielectric}\mathrm{is}500\mathrm{nm}{\mathrm{SiO}}_2.$

This results in a mobility of 23.1 cm²/Vs. If the quantum capacitance of nanotube networks is taken, there is a more sophisticated and rigorous model to calculate C_ox, which gives:

$C_{\mathrm{ox}}=\frac{D}{\frac{1}{C_{\mathrm{Ql}}}+\frac{1}{2{\mathrm{\pi \varepsilon }}_0{\varepsilon }_{\mathrm{ox}}}\ln \left[\frac{\sinh \left(2\pi t_{\mathrm{ox}}D\right)}{\pi \mathrm{RD}}\right]},$

where C_QI=4×10⁻¹⁰ F/m is the quantum capacitance of single nanotube²⁶ and D≈28 tubes/μm is the nanotube density. This gives C_ox=6.74×10⁻⁹ F/cm², which is similar to the C_ox value based on the simple model. In some embodiments, this is the capacitance generated by 500 nm SiO₂, and is smaller than the quantum capacitance generated by nanotube networks. Since these two capacitances are in series, the smaller one should dominate. Hence the simple model for mobility calculation of all back gated CNT TFTs was adopted.

This study shows that back gated devices can have relatively uniform device performance, and tunable on current by designing proper W and L without compromising mobility and I_on/I_off. Overall, these as-printed CNT TFT devices show similar performance to their photolithography-made CNT TFT counterparts.

Based on the measured high I_on, high I_on/I_off ratio, as well as high mobility of the printed CNT TFTs, their application in display electronics is further explored. In one example, an OLED was connected to a typical SWCNT TFT back gated device. The schematic diagram is plotted in the inset of FIG. 2C. From the OLED current (I_OLED) versus V_G family curves, e.g., see FIG. 2C, a close inspection of the curve measured at V_SS=−10 V, when V_G=−10 V, reveals that the current flowing through the OLED is 21.4 μA; when V_G=10 V, the current flowing through the OLED is 378.0 pA. This corresponds to a modulation of I_OLED of 56614. From the I_OLED-V_SS family curves (FIG. 2D), good diode behavior is observed with a clear cutoff region and triode region under different V_G, showing good control from the CNT TFT over the OLED. The cutoff voltage of V_SS is around −3.5 V, in accordance with the threshold voltage of the OLED.

From the figures, the SWCNT TFT was able to provide enough driving current (21.4 μA when V_G=−10 V and V_SS=−10 V) for OLED, which requires as low as ˜1 μA to have observable light emission. In certain aspects, the OLED can be on up to the point when V_G is as positive as 2 V, and is totally turned off when V_G becomes more positive (6 V), corresponding to the I_OLED-V_G curve measured at V_SS=−10 V, where the curve enters cutoff region around 5.5 V.

The next step toward the 2T1C display control circuit is to fabricate top gate SWCNT TFTs based on printed back gated TFTs. Here PEI (Mw: 10 k, Sigma Aldrich) was used as an ion gel dielectric for CNT TFTs, due to its well known property that when applying a voltage to the surface of a thin film of this gel, the surface would become conductive and could work as a self-aligned gate electrode, while underneath this metallic layer, the gel would still remain insulating and work as a gate dielectric. Due to the large molecular weight, pure PEI has a high viscosity and therefore is unable to print out. Here PEI is dissolved in methanol in 1:5 volume ratio and stirred overnight to reduce the viscosity before printing. Besides, to improve the gate conductance, a small amount of LiClO₄ (LiClO₄ to PEI weight ratio: 1˜2.5) is added to fine tune the device performance.

The printed top gated CNT TFTs were characterized by electric property measurements in ambient air. Interestingly, both ambipolar and p-type behaviors were observed for most devices. FIGS. 3A-B show the I_D-V_G and I_D-V_D family curves of a typical ambipolar device, while FIGS. 3C-D show that of a representative p-type device. The coverage of printed CNT TFT is seen to influence the change of type of carrier transport for devices with similar mobility before top gate electrolyte printing, which indicates similar CNT density and CNT/Ag source/drain pad contact condition. If the percentage of channel coverage is relatively small, the top gate device would remain p-type. If the coverage of PEI/LiClO₄ is very high, then the device would display ambipolar behavior. It has been reported that the carrier type in SWNTs can be modified by introducing electron donors or acceptors. For example, the electric properties shown in FIGS. 4A-B correspond to a PEI/LiClO₄ coverage of 85%, while the electric properties shown in FIGS. 4C-D correspond to a PEI/LiClO₄ coverage of 70%. The oxygen molecules adsorbed on CNT TFTs from air act as electron acceptors and therefore CNT TFTs are intrinsically p-type in ambient air.

Earlier studies of polymer electrolyte-gated CNT TFTs reveals that, the oxygen atoms in PEI/LiClO₄ would be adsorbed onto the SWNT sidewall and act as electron donors to compensate for the p-type doping effect from the oxygen molecules. It was also observed that if (2,3-dichloro-5,6-dicyanobenzoquinone) DDQ, a strong electron acceptor, was introduced into PEI, the polymer electrolyte-gated CNT TFT would become ambipolar at low DDQ concentration and return to p-type at a high DDQ concentration. A similar competition between oxygen atoms in PEI/LiClO4 and oxygen molecules adsorbed onto CNT may be attributed to what is observed here. If the PEI/LiClO₄ coverage is 100%, then electron donors would dominate and the devices would assume exclusively n-type behavior. If the PEI/LiClO₄ coverage is very high, there are more electron donors than electron acceptors and thereby the CNT TFTs work as ambipolar top gated devices. If the PEI/LiClO₄ coverage is relatively low, there are more electron acceptors and the CNT TFTs remain p-type. However, the coverage of PEI/LiClO₄ may, beyond certain point, provide enough gating effect or the device would become very resistive after PEI printing.

From FIG. 3A, the subthreshold swings of ambipolar top gated device are calculated to be 258 mV/decade for p-type branch and 136 mV/decade for n-type branch, while that of the p-type top gated device is calculated to be 133 mV/decade, as is obtained from FIG. 4C. The above calculated subthreshold swings are of the same magnitude, as can be expected for devices with a similar ratio of diffusion capacitance and gate capacitance. Mobility calculations for polymer gated devices requires more analysis of total gate capacitance. The capacitance provided by PEI/LiClO₄ polymer is:

$C_{\mathrm{PG}}=\frac{{\mathrm{\varepsilon \varepsilon }}_0}{\lambda }$

Where λ is the Debye length calculated by:

$\lambda =\sqrt{\frac{{\mathrm{\varepsilon \varepsilon }}_0\mathrm{kT}}{2\rho e^2}}.$

Here, ρ is the concentration of LiClO₄, ∈=10 is the dielectric constant of PEI. The calculated value for C_PG is 2.062×10⁻³ F/cm². Quantum capacitance generated by carbon nanotube network is quantified by:

C _Q =C _QI ×D=1.12×10⁻⁶ F/cm².

For nanotubes gated by PEI/LiClO₄, the nanotube capacitance and the polymer gate capacitance would be in series, and thereby the nanotube capacitance would dominate, which is almost 10³ times smaller than that of PEI/LiClO₄. Based on this, the calculated mobility for holes of the ambipolar top gated transistor is about 0.42 cm²/Vs and the calculated mobility for electrons is about 0.56 cm²/Vs, while the calculated mobility for holes of the p-type top gated transistor is about 2.80 cm²/Vs. Compared to the back-gated devices, the polymer gated transistors have a much lower mobility. This is not surprising as there would be more scattering at nanotube/polymer gate interface, which impedes carrier transportation. Noticeably, the mobility of the ambipolar device is much lower than that of the p-type top gated device. From the previous energy band analysis, it is indicated that ambipolar top gated transistors would have a lower on current compared to either n-type or p-type top gated transistors with same W and L, as their Schottky barrier for both holes and electrons are relatively thicker than that of their unipolar counterparts. Thereby, ambipolar devices would have a lower mobility.

Top gated CNT TFTs were printed on Kapton to demonstrate fully printed flexible devices. Electric property measurements of devices on Kapton and Si/SiO₂ show no significant differences compared to Si substrates, indicating no selectivity over substrates of these fully printed top gated CNT TFTs.

The hysteresis of all the devices mentioned above was compared: back gated device on silicon wafer, top gated ambipolar device on Kapton or silicon wafer, and top gated p-type device on silicon wafer. Hysteresis of top gated devices can be small, compared to that of the back gated devices, due, for example, to stronger gating effects from polymer electrolytes. Although there is a small amount of hysteresis, these devices were good enough for a simple logic circuit. A simple inverter function was demonstrated by using two ambipolar transistors.

The study of how the PEI/LiClO₄ operates as a dielectric and gate electrode for CNT TFTs paves the way for the 2T1C OLED control circuit. For demonstration purpose, the storage capacitance was omitted and the transistor-only (2T) OLED control circuit was tested. As p-type top gated CNT TFT has a higher mobility, and unipolar transportation ensures a symmetric cut off and turn on region, a p-type top gated CNT TFT for this circuit was utilized.

Electric property characterizations were done first without the OLED, as is indicated in the circuit diagram shown on the inset of FIG. 4A. With V_DD biased at 0.1 V, 0.2 V, 0.3 V, 0.4 V and 0.5 V and V_Data swept from −1 V to 1 V, when V_Scan=0 V, the switch transistor is cut off and there is no current through the driving transistor. When V_scan=−0.5 V, the switch transistor turns on and it passes V_Data to the driving transistor. The details of how V_Data controls the current provided by driving transistor (I_DD) are plotted in FIG. 4A, under different V_DD ranging from 0.5 V to 0.1 V. Specifically, the I_DD-V_Data curve measured under V_DD=0.3 V is magnified and re-plotted in FIG. 4B.

Then an external OLED is directly connected to this display circuit, with cathode connected to the drain of driving transistor and anode connected to a negative voltage of −3.4V, which is used to provide the voltage drop on OLED in on state. I_DD-V_Data was measured at V_DD=0.1 V, 0.2 V, 0.3 V, 0.4 V and 0.5 V. Noticeably, the on/off ratio decreased to about 10 due to the fact that in this circuit configuration the OLED is never turned off due to the negative voltage applied to V_SS, the absolute value of which approximately equals the threshold voltage of OLED. Yet the light intensity difference is still observed for the controlled OLED.

Display applications typically operate at 60 Hz. Accordingly, frequency investigation of single top gated and back-gated transistors was conducted. The external OLED was replaced with a resistance and found out the 3 dB frequency to be 5.66 kHz for back-gated CNT TFT and 93.3 Hz for top gated CNT TFT.

In summary, fully printed CNT TFT circuits based on 98% semiconducting SWCNT and printed electronic technologies have been fabricated. These CNT TFTs have good mobility, good on/off ratio and good current capacity. They are suitable components for OLED-based display backplane electronics and the control over external OLED using one single backgate CNT TFT is achieved. Based on that, with one more printing step of PEI/LiClO₄, these back gated CNT TFTs are converted to top gated CNT TFTs. Top gated CNT TFTs are also made on Kapton to demonstrate the potential of using this technology for flexible electronics. Good CNT inverter functionality and transistor frequency characteristics were observed. Finally, 2T OLED control circuit composed of two fully printed top gated CNT TFTs is made and its ability to control over external OLED is demonstrated.

It is understood that any specific order or hierarchy of steps in the processes disclosed is an illustration of exemplary approaches. Based upon design preferences, it is understood that the specific order or hierarchy of steps in the processes may be rearranged, or that all illustrated steps be performed. Some of the steps may be performed simultaneously. For example, in certain circumstances, multitasking and parallel processing may be advantageous. Moreover, the separation of various system components in the embodiments described above should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

The previous description is provided to enable any person skilled in the art to practice the various aspects described herein. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects. Thus, the claims are not intended to be limited to the aspects shown herein, but are to be accorded the full scope consistent with the language claims, wherein reference to an element in the singular is not intended to mean “one and only one” unless specifically so stated, but rather “one or more.” Unless specifically stated otherwise, the term “some” refers to one or more. Pronouns in the masculine (e.g., his) include the feminine and neuter gender (e.g., her and its) and vice versa. Headings and subheadings, if any, are used for convenience only and do not limit the subject disclosure.

A phrase such as an “aspect” does not imply that such aspect is essential to the subject technology or that such aspect applies to all configurations of the subject technology. A disclosure relating to an aspect may apply to all configurations, or one or more configurations. A phrase such as an aspect may refer to one or more aspects and vice versa. A phrase such as a “configuration” does not imply that such configuration is essential to the subject technology or that such configuration applies to all configurations of the subject technology. A disclosure relating to a configuration may apply to all configurations, or one or more configurations. A phrase such as a configuration may refer to one or more configurations and vice versa.

The word “exemplary” is used herein to mean “serving as an example or illustration.” Any aspect or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects or designs.

All structural and functional equivalents to the elements of the various aspects described throughout this disclosure that are known or later come to be known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the claims. Moreover, nothing disclosed herein is intended to be dedicated to the public regardless of whether such disclosure is explicitly recited in the claims.

Claims

1. A method comprising: disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer of electrodes comprises a source electrode and a drain electrode;printing a film comprising carbon nanotubes on the substrate between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and the drain electrode;disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode; anddisposing a dielectric material over exposed portions of the carbon nanotube film.

2. The method of claim 1, wherein disposing comprises printing.

3. The method of claim 1, wherein the first electrically conductive material, the second electrically conductive material, or both comprise silver.

4. The method of claim 1, wherein the carbon nanotubes comprise semiconducting single-walled carbon nanotubes.

5. The method of claim 1, wherein the carbon nanotubes consist essentially of single-walled carbon nanotubes.

6. The method of claim 1, wherein the first layer of electrodes comprises a gate electrode.

7. The method of claim 6, comprising disposing the dielectric film between the gate electrode and the source and drain electrodes such that the dielectric film contacts the gate electrode and the source and drain electrodes.

8. The method of claim 1, wherein the dielectric material comprises a polymer electrolyte.

9. The method of claim 1, wherein the dielectric material comprises polethylenimine and LiClO4.

10. The method of claim 1, wherein the substrate comprises a Si/SiO2 wafer.

11. The method of claim 1, comprising sintering the first layer of electrodes before printing the carbon nanotube film on the substrate.

12. The method of claim 1, comprising contacting the substrate with (aminopropyl) triethoxysilane before printing the carbon nanotube film on the substrate.

13. A transistor formed by the method of claim 1.

14. An organic light emitting diode driving circuit comprising two transistors of claim 13.

15. A transistor comprising: a substrate;a first layer of electrodes formed on the substrate and comprising a source electrode and a drain electrode;a single-walled carbon nanotube film printed between the source electrode and the drain electrode and forming an interface between the carbon nanotube film and the source electrode and the carbon nanotube film and the drain electrode;a second layer of electrodes formed over the interface between the carbon nanotube film and the source electrode and the carbon nanotube film and the drain electrode; anda dielectric layer formed over the carbon nanotube film.

16. The transistor of claim 15, wherein the first layer of electrodes comprises a gate electrode.

17. The transistor of claim 16, wherein the dielectric layer contacts the gate electrode, the source electrode, and the drain electrode.

18. An organic light emitting diode driving circuit comprising the transistor of claim 16.