Claims
- 1. A method comprising the steps of:
- sputtering a target, to form an outermost layer of a functional product,
- wherein said functional product comprises at least one oxide layer and at least one layer comprising silver, alternately laminated on a substrate in a total of (2n+1) layers, wherein n.gtoreq.1, said outermost layer comprises` an oxide containing tin and silicon,
- a ratio of tin defined as Sn/(Sn+Si) of said outermost layer is 40-90% in atomic ratio, and
- said sputtering is direct current sputtering.
- 2. The method of claim 1, wherein the (2n+1) layers consist of an oxide layer, a layer comprising silver and an oxide layer sequentially laminated on the substrate.
- 3. The method of claim 1, wherein the (2n+1) layers consist of an oxide layer, a layer comprising silver, an oxide layer, a layer comprising silver and an oxide layer, sequentially laminated on the substrate.
- 4. The method of claim 1, wherein the refractive index of visible light of the outermost layer is in a range of 1.5 through 2.0.
- 5. The method of claim 1, wherein the outermost layer has a thickness of from 1 nm to 50 nm.
- 6. The method of claim 1, wherein a metal layer is formed between a layer comprising silver and an oxide layer.
- 7. The method of claim 1, wherein said substrate is float glass.
- 8. The method of claim 1, wherein each said layer comprising silver has a thickness of from 5-25 nm.
- 9. The method of claim 1, wherein each said oxide layer has a thickness of from 10-18 nm.
- 10. The method of claim 1,wherein each said layer comprising silver further comprises an element selected from a group consisting of palladium, aluminum and copper.
- 11. The method of claim 6, wherein said metal layer comprises a metal selected from the group consisting of Zn, Ti, Cr, Sn, Ni and stainless steel.
- 12. The method of claim 6, wherein said metal layer has a thickness of from 1-5 nm.
- 13. A method comprising the steps of:
- sputtering a target, to form an outermost layer of a functional product,
- wherein said functional product comprises at least one oxide layer and at least one layer comprising silver alternately laminated on a substrate in a total number of (2n+1) layers, wherein n.gtoreq.1, said outermost layer comprises an oxide containing tin and silicon,
- a barrier layer is formed between a layer comprising silver and an oxide layer,
- said barrier layer comprises a material selected from the group consisting of silicon nitride, aluminum nitride and BN, and
- said sputtering is direct current sputtering.
- 14. The method of claim 1, further comprising the step of spraying a resin powder on said functional product.
- 15. The method of claim 1, wherein said sputtering is reactive sputtering.
- 16. The method of claim 1, further comprising the step of preparing said target by cold isostatic press method.
- 17. The method of claim 1, wherein said target is a metal target.
- 18. The method of claim 1, wherein said sputtering has a film forming rate at least 2.5 times as fast as a sputtering film forming rate of an oxide target containing zirconium and silicon in the atomic ratio of 1:2 under identical sputtering conditions.
- 19. The method of claim 1, wherein a power density during said sputtering is greater than a sputtering power density which will cause an oxide target containing zirconium and silicon, in the atomic ratio of 1:2, to arc.
- 20. The method of claim 13, wherein a ratio of tin defined as Sn/(Sn+Si) of said outermost layer is 40-90% in atomic ratio.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-357811 |
Dec 1991 |
JPX |
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Parent Case Info
This application is a Continuation of application Ser. No. 08/583,528, filed on Jan. 5, 1996, now abandoned, which is a Continuation of application Ser. No. 08/267,402, filed on Jun. 29, 1994, now abandoned, which is a Continuation-In-part of application Ser. No. 07/995,829, filed on Dec. 23, 1992, now abandoned.
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5110637 |
Ando et al. |
May 1992 |
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Apr 1993 |
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5209835 |
Makino et al. |
May 1993 |
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Foreign Referenced Citations (2)
Number |
Date |
Country |
0 331 201 |
Sep 1989 |
EPX |
0331201 |
Sep 1989 |
EPX |
Non-Patent Literature Citations (1)
Entry |
J. Vossen et al, "Thin Film Processes", Academic Press, 1978, pp. 14-16. |
Continuations (2)
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Number |
Date |
Country |
Parent |
583528 |
Jan 1996 |
|
Parent |
267402 |
Jun 1994 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
995829 |
Dec 1992 |
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