Claims
- 1. A method for forming a functional product, comprising the steps of:
- forming a functional film above a substrate; and
- forming a first oxide film above said substrate, by sputtering a target;
- wherein said first oxide film comprises tin and silicon, and
- said first oxide film has an atomic ratio of tin defined as Sn/(Sn+Si) in a range of 30-90%.
- 2. The method of claim 1, further comprising the step of forming a second oxide film above said substrate.
- 3. The method of claim 2, further comprising the step of forming a third oxide film above said substrate.
- 4. The method of claim 2, further comprising the step of forming a metal film between said functional film and said substrate.
- 5. The method of claim 2, wherein said second oxide film is formed below said functional film.
- 6. The method of claim 2, wherein said second oxide film comprises tin and silicon.
- 7. The method of claim 1, further comprising the step of forming a chemicalproof protective film above said first oxide film.
- 8. The method of claim 1, wherein said functional film comprises a material selected from the group consisting of a nitride, a carbide, a metal and an absorptive oxide.
- 9. The method of claim 1, wherein said functional film comprises a nitride selected from the group consisting of titanium nitride, zirconium nitride, hafnium nitride and chromium nitride.
- 10. The method of claim 1, wherein said first oxide film has an atomic ratio of tin defined as Sn/(Sn+Si) in a range of 40-90%.
- 11. The method of claim 1, wherein said first oxide film further comprises an element selected from the group consisting of zirconium, titanium, tantalum and bismuth.
- 12. The method of claim 1, wherein said substrate is glass.
- 13. The method of claim 3, wherein said sputtering of said target is with a power density of more than 9.4 W/cm.sup.2.
- 14. The method of claim 1, wherein said sputtering is direct current sputtering.
- 15. The method of claim 1, wherein said first oxide film has a thickness of 10-1000 .ANG..
- 16. The method of claim 1, wherein said functional film has a thickness of from 20-100 .ANG..
- 17. The method of claim 1, wherein said first oxide film has a refractive index of 1.5-2.0.
- 18. The method of claim 1, wherein said functional product has a visible light transmittance of at least 70%.
- 19. The method of claim 1, further comprising the step of preparing said target by cold isostatic press method.
- 20. The method of claim 1, wherein said target is a metal target.
- 21. The method of claim 1, wherein said sputtering has a film forming rate at least 2.5 times as fast as a sputtering film forming rate of an oxide target containing zirconium and silicon in the atomic ratio of 1:2 under identical conditions.
- 22. The method of claim 1, wherein a power density during said sputtering is greater than a sputtering power density which will cause an oxide target containing zirconium and silicon, in the atomic ratio of 1:2, to arc.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-357811 |
Dec 1991 |
JPX |
|
Parent Case Info
This is a Division of application Ser. No. 07/995,829 filed on Dec. 23, 1992 now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0331201 |
Sep 1989 |
EPX |
Non-Patent Literature Citations (1)
Entry |
J. Vossen et al., "Thin Film Process", Academic Press, 1978, pp. 14-16. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
995829 |
Dec 1992 |
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