The present invention relates to a fuse element, and a fuse device and a protection device using the fuse element.
Priority is claimed on Japanese Patent Application No. 2019-113530 filed in Japan on Jun. 19, 2019, the content of which is incorporated herein by reference.
As a current cut-off device which cuts off a current path when an overcurrent which exceeds a rated current is applied to a circuit board, a fuse device is known that cuts off the current path using a fuse element which generates heat and fuse itself. As a fuse element for a fuse device, for example, Patent Document 1 describes a fuse element which includes a low-melting-point metal layer and a high-melting-point metal layer laminated on the low-melting-point metal layer, and having a configuration in which the low-melting-point metal layer is melted when a current exceeding a rated current is applied and a molten material thereof melts the high-melting-point metal layer to fuse the fuse element. In Patent Document 1, solder, tin, and a tin alloy are exemplified as a material of the low-melting-point metal layer, and silver, copper, and an alloy containing silver or copper as a main component are exemplified as a material of the high-melting-point metal layer.
Also, as a current cut-off device which cuts off a current path when an abnormality other than occurrence of an overcurrent occurs in a circuit board, a protection device using a heating element (heater) is known. The protection device is configured to cause a heating element to generate heat by applying a current to the heating element in the event of an abnormality other than occurrence of an overcurrent and use the generated heat to fuse the fuse element. As a fuse element (meltable conductor) which is used for the protection device using a heating element, for example, Patent Document 2 describes a fuse element which is formed of a laminate including a high-melting-point metal layer and a low-melting-point metal layer and having a configuration in which the low-melting-point metal layer is melted by heat generated by a heating element and then melts the high-melting-point metal layer to fuse the fuse element. In Patent Document 2, Pb-free solder, tin, and a tin alloy are exemplified as a material of the low-melting-point metal layer, and silver, copper, and an alloy containing silver or copper as a main component is exemplified as a material of the high-melting-point metal layer.
It is preferable that a fuse element is fused such that a low-melting-point metal layer is rapidly melted and a molten material thereof melts a high-melting-point metal layer in the event of an abnormality such as occurrence of an overcurrent. For this purpose, the low-melting-point metal layer and the high-melting-point metal layer are necessarily in close contact with each other. However, when a high-melting-point metal layer having a lower ionization tendency than a low-melting-point metal layer is formed on a surface of this low-melting-point metal layer by, for example, a plating method, a special pretreatment process is required to ensure adhesion at an interface between the low-melting-point metal layer and the high-melting-point metal layer, resulting in high costs.
The present invention has been made in view of the above circumstances, and an objective thereof is to provide a fuse element in which adhesion between a low-melting-point metal layer and a high-melting-point metal layer is high to allow rapid fusing in the event of an abnormality such as occurrence of an overcurrent and a production cost is low, and provides a fuse device and a protection device using the fuse element.
The present invention provides the following means to solve the above-described problems.
(1) A fuse element according to a first aspect of the present invention includes a low-melting-point metal layer, a high-melting-point metal layer laminated on at least one surface of the low-melting-point metal layer, and an intermediate layer disposed between the low-melting-point metal layer and the high-melting-point metal layer, in which the high-melting-point metal layer and the intermediate layer are layers formed of a metal which is melted by a molten material of the low-melting-point metal layer, and the intermediate layer has a higher ionization tendency than an ionization tendency of the high-melting-point metal layer.
(2) A fuse element according to a second aspect of the present invention includes a low-melting-point metal layer, a high-melting-point metal layer laminated on at least one surface of the low-melting-point metal layer, and an intermediate layer disposed between the low-melting-point metal layer and the high-melting-point metal layer, in which the high-melting-point metal layer and the intermediate layer are layers formed of a metal which is melted by a molten material of the low-melting-point metal layer, and the intermediate layer has a higher melting point than a melting point of the high-melting-point metal layer.
(3) In the aspect according to the above-described (1) or (2), the low-melting-point metal layer may be a layer formed of tin or a tin alloy which contains tin as a main component.
(4) In the aspect according to any one of the above-described (1) to (3), the high-melting-point metal layer may be a layer formed of silver or a silver alloy which contains silver as a main component.
(5) In the aspect according to any one of the above-described (1) to (4), the intermediate layer may be a layer formed of at least one type of a metal selected from the group consisting of copper, iron, and nickel, or an alloy which contains these metals as a main component.
(6) In the aspect according to any one of the above-described (1) to (5), the intermediate layer may have a lower ionization tendency than that of the low-melting-point metal layer.
(7) In the aspect according to any one of the above-described (1) to (6), a film thickness of the low-melting-point metal layer may be 30 μm or more, a film thickness of the high-melting-point metal layer may be 1 μm or more, and a film thickness of the intermediate layer may be within a range of 0.01 μm or more and 1 μm or less.
(8) A fuse device according to one aspect of the present invention includes an insulating substrate, and the fuse element according to any one of the above-described (1) to (7) disposed on a surface of the insulating substrate.
(9) A protection device according to one aspect of the present invention includes an insulating substrate, the fuse element according to any one of the above-described (1) to (7) disposed on a surface of the insulating substrate, and a heating element disposed on a surface of the insulating substrate and configured to heat the fuse element.
According to the present invention, it is possible to provide a fuse element with high adhesion between a low-melting-point metal layer and a high-melting-point metal layer and low production cost, and a fuse device and a protection device using the fuse element.
Hereinafter, preferred examples of embodiments of a fuse element according to the present invention, and a fuse device and a protection device using the fuse element will be described in detail with reference to the drawings as appropriate. In the drawings used in the following description, there are cases in which characteristic portions are enlarged for convenience of illustration so that characteristics can be easily understood, and dimensional proportions or the like of respective constituent elements may be different from actual ones. Materials, dimensions, and the like illustrated in the following description are merely examples, and the present invention is not limited thereto and can be implemented with appropriate modifications within a range in which the effects of the present invention are achieved. Changes, omissions, additions, substitutions, and other modifications can be made to positions, numbers, ratios, types, sizes, shapes, or the like within a range not departing from the gist of the present invention. Unless there is a particular problem, preferable characteristics and conditions in the examples may be shared with each other.
As illustrated in
A melting point of the low-melting-point metal layer 11 is preferably equal to or lower than a heating temperature during reflow performed when a fuse device or a protection device is manufactured. When the reflow temperature is 240° C. to 260° C., a melting point of a material constituting the low-melting-point metal layer 1I is preferably in a range of 200° C. or higher and 235° C. or lower. The above-described melting point may be in a range of 200° C. or higher and 218° C. or lower or 218° C. or higher and 235° C. or lower as necessary.
A material of the low-melting-point metal layer 11 is preferably tin or a tin alloy containing tin as a main component. Containing “as a main component” means that the component is contained in an amount exceeding 50% by mass. A tin content of the tin alloy is preferably 40% by mass or more, and more preferably 60% by mass or more. The content mentioned above may also be 70% by mass or more or 80% by mass or more. An upper limit value of the content can be arbitrarily selected but may be, for example, 100% by mass or less, 99% by mass or less, or 97% by mass or less. As an example of the tin alloy, a Sn—Bi alloy, an In—Sn alloy, or a Sn—Ag—Cu alloy can be exemplified.
The high-melting-point metal layer 12 is a layer formed of a metal material that is melted by a molten material of the low-melting-point metal layer 11. When a material which constitutes the low-melting-point metal layer 11 is tin or a tin alloy, a material which constitutes the high-melting-point metal layer 12 is preferably silver or an alloy containing silver as a main component. A silver content of the silver alloy is preferably 40% by mass or more, and more preferably 60% by mass or more. The content described above may also be 70% by mass or more or 80% by mass or more. An upper limit value of the content can be arbitrarily selected but may be, for example, 100% by mass or less, 99% by mass or less, or 97% by mass or less. As an example of the silver alloy, a silver-palladium alloy may be exemplified. Also, silver is a noble metal, has a low ionization tendency, basically barely oxidizes in the atmosphere, and is easily melted by a molten material of tin which constitutes the low-melting-point metal layer 11. Therefore, silver can be suitably used as a material of the high-melting-point metal layer 12 which is an outermost layer of the fuse element. Further, an ionization tendency of each of these metal is well known. Also, a higher ionization tendency means a greater likelihood of emitting electrons to produce cations, that is, it is a greater likelihood of oxidation. Also, an ionization tendency of each layer may mean an ionization tendency of a metal serving as a main component of the material which forms each layer.
It is preferable that a melting point of a material which constitutes the high-melting-point metal layer 12 is within a range of +100° C. or higher and +800° C. or lower with respect to the melting point of the low-melting-point metal layer 11. That is, the melting point of the high-melting-point metal layer 12 is preferably higher than that of the low-melting-point metal layer 11 by 100 to 800° C. The melting point of the high-melting-point metal layer 12 is preferably in a range of 300° C. or higher and 1000° C. or lower. The melting point of the high-melting-point metal layer 12 may be in a range of 300° C. or higher and 500° C. or lower, 500° C. or higher and 700° C. or lower, or 700° C. or higher and 1000° C. or lower as necessary.
The intermediate layer 13 is a layer formed of a metal material that is melted by the molten material of the low-melting-point metal layer 11. When the material which constitutes the low-melting-point metal layer 11 is tin or a tin alloy, a material which constitutes the intermediate laver 13 is preferably at least one type of a metal selected from the group consisting of copper, iron, and nickel, or a metal alloy containing the metal as a main component. An amount of copper, iron, and nickel in the metal alloy is preferably 40% by mass or more, and more preferably 60% by mass or more. The content described above may also be 70% by mass or more or 80% by mass or more. An upper limit value of the content can be arbitrarily selected but may be, for example, 100% by mass or less, 99% by mass or less, or 90% by mass or less. As an example of the copper alloy, phosphor bronze can be exemplified. As an example of the iron alloy, nickel iron can be exemplified. As an example of the nickel alloy, nickel-cobalt can be exemplified. Among metals that can be used for the intermediate layer 13, copper, iron, nickel, and alloys thereof have high rigidity and are preferable because the fuse element 10 using such a metal does not readily deform during reflow when the fuse device or the protection device is manufactured.
The intermediate layer 13 preferably has a higher ionization tendency than the high-melting-point metal layer 12. Due to the high ionization tendency of the intermediate layer 13, adhesion at an interface between the intermediate layer 13 and the high-melting-point metal layer 12 is improved when the high-melting-point metal layer 12 is formed by a plating method.
It is more preferable that the ionization tendency of the intermediate layer 13 be lower than that of the low-melting-point metal layer 11. That is, the ionization tendency of the intermediate layer 13 is more preferably between ionization tendencies of the low-melting-point metal layer 11 and the high-melting-point metal layer 12. When the ionization tendency of the intermediate layer 13 is between the ionization tendencies of the low-melting-point metal layer 11 and the high-melting-point metal layer 12, a difference in ionization tendency at the time of each plating can be reduced by interposing the intermediate layer 13 therebetween compared to a case in which the high-melting-point metal layer 12 is formed directly on the low-melting-point metal layer 11 by a plating method. As a result, it is possible to improve stability in plating, improve the quality, and reduce processing costs. Also, it is possible to obtain the intermediate layer 13 having a uniform film thickness and in which melting by the molten material of the low-melting-point metal layer 11 proceeds easily.
With regard to the intermediate layer 13, it is preferable that a melting point of the material constituting the layer be higher than the melting point of the high-melting-point metal layer 12. Thus if a thickness of the high-melting-point metal layer 12 is reduced, the fuse element 10 does not readily deform during reflow when the fuse device or the protection device is manufactured. The melting point of the intermediate layer 13 is preferably in a range of +50° C. or higher and +500° C. or lower with respect to the melting point of the high-melting-point metal layer 12. When the melting point of the intermediate layer 13 is too low, the above-described effects due to the intermediate layer 13 may not be obtained. On the other hand, when the melting point of the intermediate layer 13 is too high, there is a likelihood that it will become difficult for melting of the intermediate layer 13 by the molten material of the low-melting-point metal layer 11 to proceed, and a fusing speed of the fuse element 10 will decrease. The melting point of the intermediate layer 13 is preferably in a range of 950° C. or higher and 1600° C. or lower. The melting point of the intermediate layer 13 may be in a range of 950° C. or higher and 1200° C. or lower, 1200° C. or higher and 1400° C. or lower, or 1400° C. or higher and 1600° C. or lower as necessary.
In the event of an abnormality such as occurrence of an overcurrent, the low-melting-point metal layer 11 is melted, a produced molten material thereof melts the intermediate layer 13 and the high-melting-point metal layer 12, and thereby the fuse element 10 is fused. In the fuse element 10, the low-melting-point metal layer 11 is contained in an amount necessary for melting the intermediate layer 13 and the high-melting-point metal layer 12 to fuse the fuse element 10. The intermediate layer 13 and the high-melting-point metal layer 12 are contained in an amount necessary for maintaining a shape of the fuse element 10 during reflow when the fuse device or the protection device is manufactured.
From the above-described viewpoint, a film thickness of the low-melting-point metal layer 11 can be arbitrarily selected but is preferably 30 μm or more. The film thickness of the low-melting-point metal layer 11 may also be 60 μm or more, 100 μm or more, or 500 μm or more. An upper limit value of the film thickness of the low-melting-point metal layer 11 can be arbitrarily selected but may be, for example, 3000 μm or less. It may be 2000 μm or less, 1500 μm or less, or the like as necessary.
Also, a film thickness of the high-melting-point metal layer 12 can be arbitrarily selected but is preferably 1 μm or more. The film thickness of the high-melting-point metal layer 12 may be 5 μm or more or 10 μm or more. An upper limit value of the film thickness of the high-melting-point metal layer 11 can be arbitrarily selected but may be, for example, 100 μm or less or 50 μm or less.
Further, a film thickness of the intermediate layer 13 can be arbitrarily selected but is preferably in a range of 0.01 μm or more and 1 μm or less. It may be in a range of 0.01 μm or more and 0.1 μm or less, 0.05 μm or more and 0.5 μm or less, or 0.5 μm or more and 1.0 μm or less as necessary.
Also, a film thickness ratio of a total film thickness of the high-melting-point metal layer 12 and the intermediate layer 13 to the film thickness of the low-melting-point metal layer 11 (the former: the latter) can be arbitrarily selected but is preferably in a range of 1:2 to 1:100. It may be in a range of, for example, 1:2 to 1:10, 1:10 to 1:30, 1:30 to 1:100, or the like as necessary. If the total film thickness of the high-melting-point metal layer 12 and the intermediate layer 13 becomes too large, there is a likelihood that a time until the intermediate layer 13 and the high-melting-point metal layer 12 are melted will become long in the event of an abnormality, and the fusing speed of the fuse element 10 will decrease. On the other hand, when the film thickness of the low-melting-point metal layer 11 becomes too large, it may be difficult to maintain the shape of the fuse element 10 during reflow when the fuse device or a protection device is manufactured.
The fuse element 10 can be manufactured by, for example, using a plating method. Specifically, the fuse element 10 can be manufactured by preparing a metal foil as the low-melting-point metal layer 11, forming the intermediate layer 13 on a surface of the metal foil by a plating method, and then forming the high-melting-point metal layer 12 on a surface of the intermediate layer 13 by a plating method. When tin or a tin alloy is used as the low-melting-point metal layer 11, the low-melting-point metal layer 11 readily oxidizes, and a passive film may be formed on a surface thereof. In this case, it is preferable to use a method of electrolytic plating (strike plating method) in a short time by applying a high current when the intermediate layer 13 is formed.
The fuse element 10 illustrated in
In the fuse elements 10, 20, and 30 according to the first embodiment of the present invention having the above-described configuration, when ionization tendencies of the intermediate layers 13, 23, and 33 are higher than ionization tendencies of the high-melting-point metal layers 12, 22, and 32, the high-melting-point metal layers 12, 22, and 32 having excellent interfacial adhesion with the intermediate layers 13, 23, and 33 and high stability can be formed at low cost by using a plating method. Particularly, in the fuse elements 10, 20, and 30 in which the intermediate layers 13, 23, and 33 are formed by a strike plating method, interfacial adhesion between the low-melting-point metal layers 11, 21, and 31, the intermediate layers 13, 23, and 33, and the high-melting-point metal layer 12 and 22 is excellent, and therefore fusing can be made more rapidly in the event of an abnormality such as occurrence of an overcurrent. Also, in the fuse elements 10, 20, and 30 in which melting points of the intermediate layers 13, 23, and 33 are higher than melting points of the high-melting-point metal layers 12, 22 and 32, since adhesion of each layer at a high temperature is not easily decreased and each layer is not easily peeled off, fusing can be made more rapidly even when a temperature becomes high due to occurrence of an overcurrent or the like.
The fuse elements 10, 20, and 30 according to the first embodiment of the present invention may further include a layer made of a metal having a lower melting point than the intermediate layers 13, 23, and 33 and a higher melting point than the high-melting-point metal layers 12, 22, and 32, and that is melted by molten materials of the low-melting-point metal layers 11, 21, and 31 between the intermediate layers 13, 23, and 33 and the high-melting-point metal layers 12, 22, and 32. Also, an antioxidant layer may be provided on surfaces of the high-melting-point metal layers 12, 22, and 32.
Next, an embodiment of the fuse device and the protection device according to the present invention will be described by taking a case in which the fuse element 10 illustrated in
As illustrated in
The insulating substrate 41 is not particularly limited as long as it has electrical insulating properties, and a known insulating substrate used as a circuit board such as a resin substrate, a ceramics substrate, or a composite substrate of a resin and a ceramic may be used. As an example of the resin substrate, an epoxy resin substrate, a phenolic resin substrate, or a polyimide substrate can be exemplified. As an example of the ceramic substrate, an alumina substrate, a glass ceramic substrate, a mullite substrate, or a zirconia substrate can be exemplified. As an example of the composite substrate, a glass epoxy substrate can be exemplified.
The first electrode 42 and the second electrode 43 are disposed at a pair of opposite end portions of the insulating substrate 41 facing each other. The first electrode 42 and the second electrode 43 are each formed by a conductive pattern such as silver wiring, copper wiring, or the like. Surfaces of the first electrode 42 and the second electrode 43 are each covered with an electrode protective layer 44 for suppressing change of properties in electrode characteristics which may be caused due to oxidation or the like. As a material which constitutes the electrode protective layer 44, for example, a Sn plating film, a Ni/Au plating film, a Ni/Pd plating film, a Ni/Pd/Au plating film, or the like can be used. Also, the first electrode 42 and the second electrode 43 are electrically connected to a first external connection electrode 42a and a second external connection electrode 43a formed on a back surface 41b of the insulating substrate 41 via castellation, respectively. Connections of the first electrode 42 and the second electrode 43 to the first external connection electrode 42a and the second external connection electrode 43a are not limited to castellation and may be performed by a through hole.
The fuse element 10 is electrically connected to the first electrode 42 and the second electrode 43 via a connecting material 45 such as solder.
A flux 46 is applied to a surface of the fuse element 10. When the flux 46 is applied, oxidation of the fuse element 10 is prevented, and wettability of the connecting material 45 when the fuse element 10 is connected to the first electrode 42 and the second electrode 43 via the connecting material 45 is improved. Also, when the flux 46 is applied, a molten metal adhering to the insulating substrate 41 due to arc discharge can be suppressed, and insulating properties after the fuse element 10 is fused can be improved.
As illustrated in
The fuse device 40 is mounted on a current path of a circuit board via the first external connection electrode 42a and the second external connection electrode 43a. While a rated current flows through the current path of the circuit board, the low-melting-point metal layer 11 of the fuse element 10 provided in the fuse device 40 does not melt. On the other hand, when an overcurrent which exceeds the rated current is applied to the current path of the circuit board, the low-melting-point metal layer 11 of the fuse element 10 generates heat and melts, a produced molten metal melts the intermediate layer 13 and the high-melting-point metal layer 12, and thereby the fuse element 10 is fused. Then, due to the fusing of the fuse element 10, the first electrode 42 and the second electrode 43 are disconnected, and the current path of the circuit board is cut off.
The fuse device 40 according to the second embodiment of the present invention having the above-described configuration uses the fuse element 10 according to the first embodiment of the present invention. Therefore, the fuse element 10 is rapidly fused in the event of occurrence of an overcurrent. Therefore, the current path of the circuit board can be cut off at an early stage.
As illustrated in
The insulating substrate 61 is not particularly limited as long as it has electrical insulating properties. As the insulating substrate 61, a known insulating substrate used as a circuit board can be used as in the case of the fuse device 40 of the second embodiment. In the present example, the insulating substrate 61 is rectangular in a plan view but is not limited to the shape and may have an arbitrarily selected shape.
The first electrode 62 and the second electrode 63 are disposed at a pair of opposite end portions of the insulating substrate 61 facing each other. The first heating element electrode 64 and the second heating element electrode 65 are disposed at another pair of opposite end portions of the insulating substrate 61 facing each other. The first electrode 62, the second electrode 63, the first heating element electrode 64, the second heating element electrode 65, and the heating element lead-out electrode 66 are each formed by a conductive pattern such as silver wiring, copper wiring, or the like. Also, the first electrode 62, the second electrode 63, the first heating element electrode 64, the second heating element electrode 65, and the heating element lead-out electrode 66 are preferably covered with an electrode protective layer 67 for suppressing change of properties in electrode characteristics which may be caused due to oxidation or the like. A material of the electrode protective layer 67 is the same as that in the case of the fuse device 40 of the second embodiment. Further, the first electrode 62, the second electrode 63, and the first heating element electrode 64 are electrically connected to a first external connection electrode 62a, a second external connection electrode 63a, and a heating element feeding electrode 64a formed on a back surface 61b of the insulating substrate 61 via castellation, respectively. Further, respective connections of the first electrode 62, the second electrode 63, and the first heating element electrode 64 to the first external connection electrode 62a, the second external connection electrode 63a, and the heating element feeding electrode 64a are not limited to castellation and may be performed by a through hole.
The heating element 70 is formed of a high resistance conductive material that has relatively high resistance and generates heat due to energization. The heating element 70 is formed of, for example, nichrome, W, Mo, Ru, or the like or a material containing these. The heating element 70 can be preferably formed by a calcination method or the like after a paste form is prepared by mixing powder substances of an alloy, a composition or a compound which contains the above-described elements with a resin binder or the like, and the paste form is formed into a pattern on a surface of the insulating substrate 61 using a screen-printing technology.
The heating element 70 is covered with an insulating member 71. As a material of the insulating member 71, for example, glass can be used. The heating element lead-out electrode 66 is disposed to face the heating element 70 via the insulating member 71. With this disposition, the heating element 70 is superposed on the fuse element 10 via the insulating member 71 and the heating element lead-out electrode 66. With such a superposed structure, heat generated by the heating element 70 can be efficiently transferred to the fuse element 10 in a narrow range.
Both ends of the fuse element 10 are electrically connected to the first electrode 62 and the second electrode 63, and a central portion thereof is connected to the heating element lead-out electrode 66. The fuse element 10 is electrically connected to the first electrode 62, the second electrode 63, and the heating element lead-out electrode 66 via a connecting material 68 such as solder. With such a configuration, in the protection device 60, a first energization path is formed through the heating element feeding electrode 64a, the first heating element electrode 64, the heating element 70, the second heating element electrode 65, the heating element lead-out electrode 66, and the fuse element 10, and a second energization path is formed through the first external connection electrode 62a, the first electrode 62, the fuse element 10, the second electrode 63, and the second external connection electrode 63a. Also, a flux 69 is applied to a surface of the fuse element 10.
As illustrated in
The protection device 60 is mounted on a current path of a circuit board via the first external connection electrode 62a, the second external connection electrode 63a, and the heating element feeding electrode 64a. Thereby, the fuse element 10 of the protection device 60 is connected in series on a current path of an external circuit board via the first external connection electrode 62a and the second external connection electrode 63a. The heating element 70 is connected to a current control device provided on the circuit board via the heating element feeding electrode 64a.
The protection device 60 is configured such that, when an abnormality occurs in the circuit board, the heating element 70 is energized via the heating element feeding electrode 64a by the current control device provided on the circuit board. This energization causes the heating element 70 to generate heat. Then, the heat is transferred to the fuse element 10 via the insulating member 71 and the heating element lead-out electrode 66. Due to the heat, the low-melting-point metal layer 11 of the fuse element 10 is melted, and a produced molten material melts the intermediate layer 13 and the high-melting-point metal layer 12. As a result, the fuse element 10 is fused. Then, due to the fusing of the fuse element 10, the first electrode 62 and the second electrode 63 are disconnected, and the current path of the circuit board is cut off.
The protection device 60 according to the third embodiment of the present invention having the above-described configuration uses the fuse element 10 according to the first embodiment of the present invention. As a result, the fuse element 10 is rapidly fused in the event of an abnormality. Therefore, the current path of the circuit board can be cut off at an early stage.
A fuse element with high adhesion between a low-melting-point metal layer and a high-melting-point metal layer and low production cost, and a fuse device and a protection device using the fuse element are provided.
Number | Date | Country | Kind |
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2019-113530 | Jun 2019 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2020/021764 | 6/2/2020 | WO | 00 |