Patent Grant
9250044
The present invention is related to laser devices. More specifically, embodiments of the present invention combine blue and/or green laser diode devices with offensive or defensive non-lethal and lethal weapon technologies to form a multi-stage weapon device capable of various levels of deterrence and/or lethality. In various embodiments, a green or blue laser diode devices function to create a dazzling effect, function to point toward a specific location or target, or function to sight for targeting and/or aiming purposes. In a specific embodiment, laser diode devices are combined with pepper spray, a Taser apparatus, a rubber projectile firing gun, and/or a lethal firearm. The laser devices can include a plurality of blue and green laser diodes, which may couple power together.
As human beings become more civilized, non-lethal techniques have been developed to temporarily halt others that may be dangerous or hostile. In any potentially hostile situation such as a military security checkpoint, a critical need exists to identify potentially threatening individuals or groups prior to undertaking an escalation of force. Non-lethal threat detection and deterrent techniques are commonly used such as megaphones, tire spike strips, traffic cones, fencing, and hand gestures. However, many of these are impractical in impromptu security environments, and such measures may not show sufficient force to deter potentially hostile parties. If a serious threat is encountered or anticipated, warning shots can be fired, but this action can actually accelerate tensions and result in unwanted and unnecessary escalation of force if the shots are perceived incorrectly by an approaching party. Moreover, once the warning shots have been fired, a common next step in the escalation of force is to engage the approaching party directly with gunfire, which dramatically increases the likelihood of loss of life.
As a result, an intermediate means of threat detection using bright light has been developed and employed called laser dazzling. This measure provides less than lethal threat detection, assessment, and an opportunity for de-escalation while at the same time providing a strong visual warning which can “dazzle” or induce temporary blindness to disorient approaching hostile parties without causing permanent ocular damage. End users of these tools include soldiers on the battlefield, homeland security officers, police, and general security who find themselves in any potentially hostile situation.
An application of bright light for threat detection and deterrence goes back to early in the 20th century when soldiers used searchlights for this purpose. As lasers were developed in the 1960s, they became more portable, and by the 1980s, defense and security forces were using lasers as dazzlers because of their long-range capability resulting from their collimated beam output. In the 1990s, the United Nations enacted the Protocol on Blinding Laser Weapons, which outlawed weapons intended to cause permanent blindness, but which leave the door open to weapons which induce temporary blindness.
Laser dazzlers are a common tool in the defense and security market. They go by several names, including laser dazzler, nonlethal visual disrupter, visual warning technology, nonlethal lasers, and others. In conventional laser dazzlers, green lasers are often employed. In order to generate the green laser light in conventional laser dazzlers, a three stage laser is often required, typically referred to as a diode pumped solid state (DPSS) frequency doubled green laser. A conventional laser design typically includes:
Unfortunately, crime continues. “A man and a woman were robbed at gunpoint near downtown Palo Alto on Tuesday night, police said. The victims, a man in his 50s and a woman in her 20s, were walking northbound on the 300 block of Ramona Street at about 8:30 p.m. when they were approached by a man, police said. He allegedly blocked the sidewalk, drew a black handgun, and demanded their wallets and the woman's purse. After handing over their things, the victims were ordered to turn around and walk in the other direction, police said. They then heard the man run away northbound on Ramona Street. The victims arrived at a restaurant on the 400 block of Emerson Street about 10 or 15 minutes after the robbery and told staff what had happened, police said. An employee called police, who searched the area but could not find the man.” By Jason Green, Daily News Staff Writer, San Jose Mercury News, Jan. 24, 2013.
Therefore, it can appreciated that improved systems and methods for laser dazzling devices are desirable.
According to the present invention, laser devices are provided. More specifically, embodiments of the present invention combine blue and/or green laser diode devices with offensive and/or defensive non-lethal and/or lethal weapon technologies to form a multi-stage weapon device capable of various levels of deterrence and/or lethality. In various embodiments, green and/or blue laser diode devices function to create a dazzling effect, but can also function as a pointer device to point toward a specific location or target, or function for weaponry sighting. In a specific embodiment, green laser diode devices are combined with pepper spray, combined with a Taser apparatus, combined with a rubber projectile firing gun, and/or combined with a lethal firearm. The laser devices can include a plurality of blue and green laser diodes, which may be coupled to a form a single laser beam. Embodiments of the present invention provide laser dazzling devices powered by one or more green laser diodes characterized by one or more wavelengths from about 500 nm to 540 nm, from 500 nm to 568 nm, from 420 nm to 568 nm, or from 420 nm to 500 nm. In various embodiments, laser dazzling devices include polar, non-polar, and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes.
In a specific embodiment, the present invention includes certain features for a laser dazzler including:
According to certain embodiments, the present invention provides a laser dazzling apparatus. The laser dazzling apparatus may be capable of providing a non-lethal deterrent, warning, or halting effect on a human subject or group of human subjects. The laser dazzling apparatus can include a housing member. The laser dazzling apparatus can include one or more laser devices. A laser device may comprise at least a gallium and nitrogen containing device having an active region and a cavity member. The laser device can be configured to emit a laser beam characterized by one or more wavelengths from about 500 nm to 540 nm, from about 420 nm to about 500 nm, and/or from about 420 nm to about 540 nm. The active regions can include a gallium nitride material. In certain embodiment, the laser beam being characterized by a first direction. The laser dazzling apparatus may include a driving circuit electrically coupled to the one or more laser devices. The driving circuit is adapted to deliver electrical energy to the laser device. The electrical energy is less than 800 mW. The laser dazzling apparatus may include a power source electrically coupled to the driving circuit. The laser dazzling apparatus may include an activation module electrically coupled to the driving circuit. The activation module can be configured to send an activation signal to the driving circuit. The laser dazzling apparatus may include a sight for aligning the laser beam such as, for example, aligning and directed the laser beam to a desired position.
According to certain embodiments, the present invention provides a laser dazzling device. The laser dazzling device can be capable of providing a non-lethal deterrent, warning, or halting effect on a human subject or group of human subjects. The laser dazzling device may include one or more laser devices. In certain embodiments, a laser device comprises a green laser diode. A green laser diode may comprise an active region and a cavity member. A green laser diode may be configured to emit a laser beam at an intensity level of less than 800 mW. The active region can include a nitride gallium and nitrogen containing material. The laser beam can be characterized by a first direction. The laser dazzling device may include a driving circuit electrically coupled to the laser device. The driving circuit may be adapted to deliver electrical energy to the laser device. The electrical energy may be less than 800 mW. A laser dazzling device may include a power source electrically coupled to the driving circuit. The laser dazzling device include an activation module electrically coupled to the driving circuit. The activation module can be configured to send an activation signal to the driving circuit, the activation module comprising an electrical trigger. The laser dazzling device may include a sight for targeting and/or aligning the laser beam such as, for example, to a desired position.
In certain embodiments, a laser diode comprises a gallium and nitrogen containing substrate. A gallium and nitrogen containing substrate can be configured in polar, nonpolar, or a semi-polar surface orientation. A laser diode can be configured to emit a laser beam characterized by at least one wavelength from about 490 nm to 540 nm, from about 420 to about 500 nm, from about 500 nm to 540 nm. A laser dazzling apparatus or laser dazzling device may include a plurality of laser diodes, each of the diodes emitting at the same wavelength or wavelengths, or may include a plurality of laser diodes, at least some of which emit at different wavelengths. The apparatus includes a power source electrically coupled to a laser device.
According to certain embodiments, the present invention provides a laser pointing device. The laser pointer device capable of accurately pointing at a target by shining a laser beam directly on the subject. The laser pointing device includes a laser device. The laser device comprises a green laser diode and/or a blue laser diode. The laser diode comprises an active region and a cavity member. The green or blue laser diode can be configured to emit a laser beam at an intensity level of less than 800 mW. The active region includes a gallium and nitrogen containing material. The laser beam can be characterized by a first direction. The laser pointer device includes a driving circuit electrically coupled to the laser device. The driving circuit is adapted to deliver electrical energy to the laser device. The electrical energy is less than 800 mW. The laser pointer device includes a power source electrically coupled to the driving circuit. The laser pointer device includes an activation module electrically coupled to the driving circuit. The activation module can be configured to send an activation signal to the driving circuit, the activation module comprising an electrical trigger. In an alternative specific embodiment, the present invention provides a laser pointer apparatus. The laser pointer apparatus includes a laser device including a laser diode. The laser diode comprises a gallium and nitrogen containing substrate configured in a polar, nonpolar, or semi-polar orientation in one or more embodiments. In one embodiment the laser diode is configured to emit a laser beam characterized by at least a wavelength of about 490 nm to 540 nm according to a specific embodiment. The apparatus includes a power source electrically coupled to the laser device in a specific embodiment.
According to another embodiment, the present invention provides a laser sighting or aiming device. The laser aiming device capable of accurately aiming a weapon at a subject such that if the weapon is activated the subject will be struck. The laser aiming device includes a laser device. The laser aiming device comprises a green laser diode and/or a blue laser diode. The laser diode comprises an active region and a cavity member. The laser diode can be configured to emit a laser beam at an intensity level of less than 800 mW. The active region includes a gallium and nitrogen containing material. The laser beam can be characterized by a first direction. The laser aiming device includes a driving circuit electrically coupled to the laser device. The driving circuit is adapted to deliver electrical energy to the laser device. The electrical energy is less than 800 mW. The laser aiming device includes a power source electrically coupled to the driving circuit. The laser aiming device includes an activation module electrically coupled to the driving circuit. The activation module can be configured to send an activation signal to the driving circuit, the activation module comprising an electrical trigger. In an alternative specific embodiment, the present invention provides a laser pointer apparatus. The laser aiming apparatus includes a laser device including a laser diode. The laser diode comprises a gallium and nitrogen containing substrate configured in a polar, nonpolar, or semi-polar orientation in one or more embodiments. In one embodiment the laser diode is configured to emit a laser beam characterized by at least a wavelength of about 490 nm to 540 nm according to a specific embodiment. The apparatus includes a power source electrically coupled to the laser device in a specific embodiment.
The present invention combines one or more of the laser devices such as the dazzler device, the laser pointer device, or the laser aiming with another weapon or deterrent device to form a multi-stage weapon or deterrent device. The novel multi-stage weapon or deterrent device will provide the user with various levels of force to apply to the subject. Such stages may range from a simple laser pointer device incident on the subject such that the subject realizes he/she is identified for escalated force if they do not comply with orders, to laser a dazzling device capable of overloading the subject's senses and rendering them temporarily incapacitated, to application of pepper spray to the subject's eyes such that the subject is temporarily blinded, to projecting rubber bullets at the subject to physically bruise or knock down the subject, and finally to a fatal weapon such as a live firearm.
In one such embodiment of this invention the laser device is combined with a Taser device capable of applying an electroshock. The electroshock is realized by injecting an electrical current into the subject, which disrupts voluntary control of muscles causing “neuromuscular incapacitation”. In this embodiment, the laser device could be a dazzling device such that before the user engages the Taser the user will engage the less lethal dazzling device in effort to make the subject comply. If the subject does not comply with use of the dazzling device, the user would then engage the Taser device to expose the subject to a more severe electrical shock. In a variation of this embodiment, a chemical agent such as pepper spray or mace is used in place of or combined with the Taser device. The chemical agent would have a similar function as the Taser devices, which is to apply a more lethal impact to the subject relative to the dazzling device. An extension to this embodiment is to use laser pointer devices to project a laser beam on the subject. By projecting the laser beam on the subject the subject will be made aware that more severe force will be used if he/she does not comply. The pointer device represents the lowest lethality. If the subject does not comply the user can engage the dazzling device. The dazzling device may comprise of the same laser diodes comprising the pointer device, but with the dazzling device operating at higher power. For example, the pointer device may operate between 5 mW and 25 mW whereas the dazzler device may operate between 25 mW and 800 mW. If the dazzling device is not effective in subduing the subject, the user could then apply the Taser or pepper spray device. In a further embodiment of this invention, the multi-stage weapon could comprise a firearm. In this embodiment, the user could apply lethal force to the non-compliant subject following application of the Taser and/or pepper spray.
It is to be appreciated that embodiments of the present invention provides numerous advantages over conventional techniques. According to the present invention, a laser dazzling device implemented using one or more green laser diodes based on GaN technology has the numerous advantages over existing DPSS approaches.
Efficiency: Because the GaN diode laser is a single stage, it is inherently more efficient and therefore requires less powerful batteries, decreasing the size, weight and cost. Moreover, the efficient generation of light minimizes waste heat, which needs to be managed and carried away which further reduces size, weight, and cost.
Ruggedness and elimination of alignment: The green laser light is generated within the chip, so external optical alignment is not required to maintain lasing. This dramatically reduces cost in the manufacturing process and also eliminates failure mechanisms for the use in the field.
Broad temperature operation: The GaN diode laser approach is not sensitive to minor changes in temperature. Therefore, requirements for several control are eliminated including sensors for temperature and/or light, along with active temperature controls such as heaters or thermoelectric coolers. This greatly reduces the system complexity, cost, size, and weight, and eliminates failure mechanisms.
Elimination of the dangerous of the residual 1064 nm beam: This GaN design produces only a green laser beam and does not produce a 1064 nm beam. This eliminates the blocking filter reducing cost, and eliminating the risk of emitting an extremely dangerous infrared beam.
Design flexibility in wavelength: By using the GaN approach, it is possible to achieve a slightly different wavelength such as 515 nm or 500 nm from the device. Such flexibility is important for dazzlers designed for dark environments, where the eye's sensitivity shifts and 500 nm is actually 20% brighter to the eye than light at 530 nm. Moreover, the flexible design enables one to fabricate a slightly different green wavelength which may be useful in preventing hostile parties from using 532 nm narrow band filter to avoid the effect of dazzling.
According to specific embodiments, green laser diodes (using nonpolar and/or semipolar GaN) for non-lethal threat detection, threat assessment, threat de-escalation, visual warning technology, and laser dazzling are provided.
The present invention achieves these benefits and others in the context of known process technology. However, a further understanding of the nature and advantages of the present invention may be realized by reference to the latter portions of the specification and attached drawings.
According to the present invention, laser devices are provided. More specifically, embodiments of the present invention combine blue and/or green laser diode devices with offensive or defensive non-lethal and lethal weapon technologies to form a multi-stage weapon device capable of various levels of lethality. In various embodiments, the green or blue laser diode devices function to create a dazzling effect, but can also function as a pointer device to point toward a specific location or target, or function for weaponry sighting. In a specific embodiment, green laser diode devices are combined with pepper spray, combined with a Taser apparatus, combined with a rubber projectile firing gun, and/or combined a lethal firearm. The laser device can include a plurality of blue and green laser diodes, which may couple power together. Embodiments of the present invention provide laser dazzling devices power by one or more green laser diodes characterized by a wavelength of about 500 nm to 540 nm. In various embodiments, laser dazzling devices include a polar, non-polar, and/or semi-polar green laser diodes. In a specific embodiment, a single laser dazzling device includes a plurality of green laser diodes.
As described above, conventional laser devices are often inadequate for various reasons. More specifically, conventional DPPS laser devices are often inefficient. Although the three stage DPSS lasers do generate green laser light for the application today, several critical limitations of this design are noted below:
In various embodiments, the present invention provides laser dazzling devices implemented using green laser diodes that directly produces green laser beams. More specifically, by utilizing a GaN diode laser that directly produces a green laser beam from a single stage design, one can efficiently produce a green beam from a tiny laser chip and eliminate or mitigate the disadvantages of existing DPSS systems in the field of laser dazzlers. According to the present invention, a green laser diode based on GaN technology would have the following advantages over existing DPSS approaches:
According to certain embodiments, the present invention provides a laser dazzling apparatus. The laser dazzling device capable of providing a non-lethal deterrent, warning, or halting effect on a human subject or group of human subjects. According to another embodiment, the present invention provides a laser pointing device. The laser pointer device is capable of accurately pointing at a target or alerting the target by applying a laser beam directly on the subject. In an alternate embodiment the present invention provides a laser sighting or aiming device. The laser aiming device capable of accurately aiming a weapon at a subject such that if the weapon is activated the subject will be struck. The laser device comprises at least a gallium and nitrogen containing device having an active region and a cavity member. The laser device is configured to emit a laser beam having a green wavelength of about 500 nm to 540 nm or a blue wavelength of about 420 nm to 485 nm. The active region includes a gallium and nitrogen containing material, the laser beam being characterized by a first direction. The laser device includes a driving circuit electrically coupled to the laser device. The driving circuit is adapted to deliver electrical energy to the laser device. The electrical energy is less than 800 mW. The laser device includes a power source electrically coupled to the driving circuit. The laser device includes an activation module electrically coupled to the driving circuit. The activation module can be configured to send an activation signal to the driving circuit. The laser device includes a sight for aligning the laser beam to a desired position.
The housing member 101 provides an enclosure for the components of the laser dazzling device. Depending on the specific application, the housing member 101 may be in various types of shapes. For example, the housing member 101 can be shaped like a pistol and includes a pistol grip. Alternative, the housing member 101 can be shaped like a rifle and comprises a rifle stock. Additionally, the housing member can be attached to vehicle mount and/or include tripod.
The laser device 103 according to embodiments of the present invention include one or more laser diodes that directly emit green laser beam without using frequency alteration (e.g., frequency double or DPSS) techniques. In a specific embodiment, the laser device includes a green laser diode that includes an active region and a cavity member. The green laser diode can be configured to emit a laser beam having a wavelength about 500 nm to 540 nm. In a specific embodiment, the wavelength is about 532 nm. The active region of the green laser diode includes gallium nitride material. For example, the green laser diode includes a mirror surface where the laser beam is emitted, and the laser beam is characterized by a first direction. Depending on the application, the green laser diode can be associated with one or more operational modes. For example, each of the operational modes is associated with a operating frequency.
In one embodiment, the laser device 103 comprises a plurality of green laser diodes sharing a single substrate. For example, the green laser diodes are monolithically integrated during the manufacturing process of the green laser diode, as is described below. By using a plurality of green laser diodes, the power level of the laser dazzling device can be increased. For example, a high power laser device having a plurality of green laser diodes is used for high-power military laser dazzling systems wherein the laser beams are used to disable weapons sensors. Alternatively, the laser device 103 comprises a plurality of green laser diodes sharing a single package.
According to various embodiments of the present invention, the green laser diode can be polar, semi-polar, or non-polar. For example, green laser diodes are fabricated from a bulk substrate. Since the green laser diodes directly emit laser beam in green wavelength range, the laser dazzling device is free from a frequency doubling crystal.
In many instances, the output power level of laser dazzling device needs to be limited to avoid permanent injury to eyes. In a specific embodiment, the laser beam is characterized by an energy level of less than 500 mW.
The driving circuit 104 is electrically coupled to the laser device 103. Among other things, the driving circuit 104 is specifically adapted to deliver electrical energy to the laser device. For example, the electrical energy can be less than 800 mW. The driving circuit 104 may deliver electrically energy to the laser device 103 in various ways. In one embodiment, the driving circuit is adapted to deliver electrical energy to the laser device in pulses.
The power source 105 is electrically coupled to the driving circuit. For example, the power source comprises a battery. The battery may be rechargeable or disposable. For example, NiMH or LiON rechargeable battery can be used for the power source.
The activation module 106 is electrically coupled to the driving circuit. The activation module is configured to send an activation signal to the driving circuit. For example, an operator is able to cause the driving circuit to provide electrical energy to the laser device, which in response emit a laser beam. In one embodiment, the activation module can be configured like a traditional trigger unit, which includes a trigger and a safety.
The sight 102 is provided for aligning the laser beam to a desired position. Depending on the application, the sight can be an open sight, an aperture sight, a red dot sight, a hologram sight, and/or a scope.
The optical member 107 is used to focus the laser beam. In an embodiment, the optical member 107 is positioned within vicinity the emitting portion of the laser device. For example, the optical member 107 includes collimation lens and telescope to collimate and size the laser beam. In one embodiment, the optical member 107 includes an optical concentrator aligned with the laser device. In another embodiment, the optical member comprises waveguide for projecting the laser beam along the first direction.
As mentioned above, various components of the laser dazzling device 100 may be added, removed, modified, and/or replaced.
As mentioned above, the laser devices according to the present invention utilizes green laser diodes.
In a specific embodiment, the device also has an overlying n-type gallium nitride layer 205, an active region 207, and an overlying p-type gallium nitride layer structured as a laser stripe region 211. In a specific embodiment, each of these regions is formed using at least an epitaxial deposition technique of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial growth techniques suitable for GaN growth. In a specific embodiment, the epitaxial layer is a high quality epitaxial layer overlying the n-type gallium nitride layer. In some embodiments, the high quality layer is doped, for example, with Si or O to form n-type material, with a dopant concentration between about 1016 cm−3 and 1020 cm−3.
In a specific embodiment, an n-type AluInvGa1-u-vN layer, where 0≦u, v, u+v≦1, is deposited on the substrate. In a specific embodiment, the carrier concentration may lie in the range between about 1016 cm−3 and 1020 cm−3. The deposition may be performed using metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Of course, there can be other variations, modifications, and alternatives.
As an example, the bulk GaN substrate is placed on a susceptor in an MOCVD reactor. After closing, evacuating, and back-filling the reactor (or using a load lock configuration) to atmospheric pressure, the susceptor is heated to a temperature between about 1000 and about 1200 degrees Celsius in the presence of a nitrogen-containing gas. In certain embodiments, the susceptor can be heated to approximately 1100 degrees Celsius under flowing ammonia. A flow of a gallium-containing metalorganic precursor, such as trimethylgallium (TMG) or triethylgallium (TEG) is initiated, in a carrier gas, at a total rate between approximately 1 and 50 standard cubic centimeters per minute (sccm). The carrier gas may comprise hydrogen, helium, nitrogen, or argon. The ratio of the flow rate of the group V precursor (ammonia) to that of the group III precursor (trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum) during growth is between about 2000 and about 12000. A flow of disilane in a carrier gas, with a total flow rate of between about 0.1 sccm and 10 sccm, is initiated.
In a specific embodiment, the laser stripe region is made of the p-type gallium nitride layer 211. In a specific embodiment, the laser stripe is provided by an etching process selected from dry etching or wet etching. In a preferred embodiment, the etching process is dry, but can be others. As an example, the dry etching process is an inductively coupled process using chlorine bearing species or a reactive ion etching process using similar chemistries. Again as an example, the chlorine bearing species are commonly derived from chlorine gas or the like. The device also has an overlying dielectric region 214, which exposes contact region 213. In a specific embodiment, the dielectric region is an oxide such as silicon dioxide or silicon nitride, but can be others. The contact region is coupled to an overlying metal layer 215. The overlying metal layer is a multilayered structure containing gold and platinum (Pt/Au), nickel gold (Ni/Au), but can be others such as Pd/Au or Pd/Ti/Au. Of course, there can be other variations, modifications, and alternatives.
In a specific embodiment, the laser device has active region 207. The active region can include one to twenty quantum well regions according to one or more embodiments. As an example following deposition of the n-type AluInvGa1-u-vN layer for a predetermined period of time, so as to achieve a predetermined thickness, an active layer is deposited. The active layer may be comprised of multiple quantum wells, with 2-10 quantum wells. The quantum wells may be comprised of InGaN with GaN barrier layers separating them. In other embodiments, the well layers and barrier layers comprise AlwInxGa1-w-xN and AlyInzGa1-y-zN, respectively, where 0≦w, x, y, z, w+x, y+z≦1, where w<u, y and/or x>v, z so that the bandgap of the well layer(s) is less than that of the barrier layer(s) and the n-type layer. The well layers and barrier layers may each have a thickness between about 1 nm and about 20 nm. The composition and structure of the active layer are chosen to provide light emission at a preselected wavelength. The active layer may be left undoped (or unintentionally doped) or may be doped n-type or p-type. Of course, there can be other variations, modifications, and alternatives.
In a specific embodiment, the active region can also include an electron blocking region, and a separate confinement heterostructure. In some embodiments, an electron blocking layer is preferably deposited. The electron-blocking layer may comprise AlsIntGa1-s-tN, where 0≦s, t, s+t≦1, with a higher bandgap than the active layer, and may be doped p-type. In one specific embodiment, the electron blocking layer comprises AlGaN. In another embodiment, the electron blocking layer comprises an AlGaN/GaN super-lattice structure, comprising alternating layers of AlGaN and GaN, each with a thickness between about 0.2 nm and about 5 nm. In Of course, there can be other variations, modifications, and alternatives.
As noted, the p-type gallium and nitrogen containing structure is deposited above the electron blocking layer and active layer(s). The p-type layer may be doped with Mg, to a level between about 1016 cm−3 and 1022 cm−3, and may have a thickness between about 5 nm and about 1000 nm. The outermost 1-50 nm of the p-type layer may be doped more heavily than the rest of the layer, so as to enable an improved electrical contact. In a specific embodiment, the laser stripe is provided by an etching process selected from dry etching or wet etching. In a preferred embodiment, the etching process is dry, but can be others. The device also has an overlying dielectric region, which exposes 213 contact region. In a specific embodiment, the dielectric region is an oxide such as silicon dioxide, but can be others. Of course, there can be other variations, modifications, and alternatives.
According to an embodiment, the as-grown material gain peak is varied spatially across a wafer. As a result, different wavelength and/or color can be obtained from one fabricated laser to the next laser on the same wafer. The as-grown gain peak wavelength can be shifted using various methods according to embodiments of the present invention. According to one embodiment, the present invention utilizes growth non-uniformities where the as-grown material has an emission wavelength gradient. For example, the growth non-uniformity can be obtained a result of temperature and/or growth rate gradients in the light emitting layers in the epitaxial growth chamber. For example, such wavelength gradients can be intentional or non-intentional, and the differences in wavelengths range from 10 nm to 40 nm deviation. For example, this method enables multiple lasers on the same chip to operate at different wavelengths.
In a specific embodiment, an optical device configured to provide laser beams at different wavelengths is provided. The device includes a gallium and nitrogen containing substrate including a first crystalline surface region orientation. For example, the substrate member may have a surface region on the polar plane (c-plane), nonpolar plane (m-plane, a-plane), and semipolar plain ({11-22}, {10-1-1}, {20-21}, {30-31}, {30-32}, {20-2-1}, {30-3-1}, {30-3-2}). The device also includes an active region comprising a barrier layer and a light emission layer, the light emission layer being characterized by a graduated profile associated with a peak emission wavelength gradient, the peak emission wavelength gradient having a deviation of at least 10 nm. Also, the device includes a first cavity member overlying a first portion of the emission layer, the first portion of the emission layer being associated with a first wavelength, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the first cavity member being adapted to emit a first laser beam at the first wavelength. The device further includes a second cavity member overlying a second portion of the emission layer, the second portion of the emission layer being associated with a second wavelength, a difference between the first and second wavelengths being at least 50 nm, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the second cavity member being adapted to emit a second laser beam at a second wavelength. Additionally, the device includes an output region wherein the first laser beam and the second laser beam are combined.
As mentioned above, a laser dazzling device may include multiple green laser diodes for various purposes, such as increased power level, varying wavelength, and others.
In certain embodiments of the present invention, emission at multiple laser wavelengths is obtained by manipulating the as-grown gain peak by selective area epitaxy (SAE), where dielectric patterns are used to define the growth area and modify the composition of the light emitting layers. Such modification of the composition can be used to cause different gain peak wavelengths and hence different lasing wavelengths. For example, by using SAE processes, a device designer can have a high degree of spatial control and can safely achieve 10 nm to 30 nm, and sometimes even more, of wavelength variation over the laser emission. For example, the SAE process is described in a U.S. Application Publication No. 2009/0309110. For example, this method enables multiple lasers on the same chip to operate at different wavelengths.
In certain embodiments, a laser dazzling apparatus manufactured using SAE processes with multiple wavelengths and/or colors is provided. The laser dazzling apparatus may include a gallium and nitrogen containing substrate characterized by a first crystalline surface region orientation. The apparatus also may include an active region comprising a barrier layer and a plurality of light emission layers, the plurality of light emission layers including at least a first emission layer and a second emission layer, the first emission layer being characterized by a first wavelength, the second emission layer being characterized by a second wavelength, a difference between the first wavelength and the second wavelength is at least 10 nm, at least 20 nm, and in certain embodiments, at least 30 nm. For example, the first and second emission layers can be formed using selective area epitaxy processes.
A laser dazzling apparatus may include a first cavity member overlying the first emission layer, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the first cavity member being configured to emit a first laser beam at a first wavelength. The apparatus may also include a second cavity member overlying the second the emission layer, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the second cavity member being configured to emit a second laser beam at a second wavelength. The apparatus may additionally include an output region wherein the first laser beam and the second laser beam are combined, for example, using optics.
As explained above, it can be desirable to combine the first and second wavelengths or colors as suitable for various applications. For example, the apparatus may have optics having dichroic coatings for combining a first and the second laser beams. In one embodiment, the apparatus includes a plurality of polarizing optics for combining a first and the second laser beams. In certain embodiments, the first cavity member and the second cavity member share a common cleaved facet of mirror edges, which can be configured to combine the first and second laser beams. In certain embodiments in which the laser device emits more than two laser beams, the multiple laser beams can be combined into a single laser beam, some of the multiple laser beams may be combined into a common laser beams, and/or one or more of the laser beams may be directed toward a distant area. The multiple laser beams directed from the apparatus may be collimated or non-collimated to fill an area on a target at a distance from the laser dazzling apparatus.
The first and second laser beams can be associated with a number of color combinations. For example, the first wavelength can be associated with a green color and the second wavelength can be associated with a blue color. Alternatively, the first and second wavelengths may be associated with a different hue of the same color. In general, a blue wavelength refers to a wavelength from about 420 nm to about 500 nm, and a blue wavelength refers to a wavelength from about 500 nm to about 540 nm,
It is to be appreciated that the laser devices can be implemented on various types of substrates. For example, the first crystalline surface region orientation can be a {0001} polar plane, a {20-21} semipolar plane, a {30-31} semipolar plane, the m-plane, or other planes of a gallium and nitrogen containing substrate.
A laser device may also include other structures, such as a surface ridge architecture, a buried heterostructure architecture, and/or a plurality of metal electrodes for selectively exciting the active region. For example, the active region may comprise first and second gallium and nitrogen containing cladding layers and an indium and gallium containing emitting layer positioned between the first and second cladding layers. A laser device may further include an n-type gallium and nitrogen containing material and an n-type cladding material overlying the n-type gallium and nitrogen containing material.
In certain embodiments of the present invention, multiple laser wavelengths and/or colors are obtained by providing multiple active regions, where certain of the active regions is associated with a specific wavelength (or color). More specifically, multiple growth of active regions can be performed across a single chip. In this technique a wafer is loaded in a growth chamber for the growth of an active region with one gain peak. After this growth, the wafer is subjected to one or more lithography and processing steps to remove a portion of the active region in some areas of the wafer. The wafer can then be subjected to a second growth process where a second active region with a second peak gain wavelength is grown. Depending on the specific need, the processes of growing and removing active regions can be repeated many times. Eventually, this can be followed by the fabrication of laser diodes strategically positioned relative to these different active regions to enable lasing at various wavelengths.
According to certain embodiments, the following steps can be performed in a method for forming a device that includes laser devices having multiple active regions:
1. providing a gallium and nitrogen containing substrate including a first crystalline surface region orientation;
2. defining a first active region by performing a selective etching process;
3. forming a barrier layer within the first active region;
4. growing a first emission layer within the first active region, the first emission layer being configured to emit a first wavelength;
5. defining a second active region by performing a selective etching process;
6. growing a second emission layer within the second active area, the second emission layer being configured to emit a second wavelength, a difference between the first gain peak wavelength and the second gain peak wavelength being at least 10 nm;
7. forming a first cavity member overlying the first emission layer, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the first cavity member being configured to emit a first laser beam at the first wavelength;
8. forming a second cavity member overlying the second the emission layer, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm the second cavity member being configured to emit a second laser beam at the second wavelength; and
9. aligning the first and second cavity members to combine the first and second laser beams at a predetermine region.
Depending on the application, the above method may also include other steps. For example, the method may include providing an optical member for combining the first and second laser beams. In one embodiment, the method includes shaping a first cleaved surface of the first cavity member, shaping a second cleaved surface of the second cavity member, and aligning the first and second cleaved surfaces to cause the first and second laser beams to combine.
It is to be appreciated that the method described above can be implemented using various types of substrates. As explained above, the substrate member may have a surface region on the polar {0001} plane (c-plane), nonpolar plane (m-plane, a-plane), and semipolar plain ({11-22}, {10-1-1}, {20-21}, {30-31}). In the method described above, two active regions and two cavity members are formed. For example, each active region and cavity member pair is associated with a specific wavelength. Depending on the application, additional active regions and cavity members may be formed to obtain desired wavelengths and/or spectral widths. In a certain embodiments, each of the active regions is characterized by a specific spatial dimension associated with a specific wavelength.
In certain embodiments, a laser apparatus having multiple active regions that provide multiple wavelengths and/or colors is provided. The laser apparatus includes a gallium and nitrogen containing substrate including a first crystalline surface region orientation. In certain embodiments, a substrate comprises an Indium bearing material. An apparatus also may include a first active region comprising a barrier layer and a first emission layer, the first emission layer being characterized by a first gain peak wavelength. An apparatus may include a second active region comprising a second emission layer, the second emission layer being characterized by a second gain peak wavelength, a difference between the first gain peak wavelength and the second gain peak wavelength is at least 10 nm.
An apparatus may further include a first cavity member overlying the first emission layer, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the first cavity member being configured to emit a first laser beam at the first wavelength. The apparatus additionally includes a second cavity member overlying the second the emission layer, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm the second cavity member being configured to emit a second laser beam at the second wavelength. An apparatus may further include an output region wherein the first laser beam and the second laser beam are combined.
As explained above, it can be desirable to combine the first and second wavelengths or colors for various applications. For example, an apparatus may have optics having dichroic coatings for combining the first and the second laser beams. In certain embodiments, an apparatus includes a plurality of polarizing optics for combining the first and the second laser beams. In a certain embodiments, the first cavity member and the second cavity member share a common cleaved facet of mirror edges, which is configured to combine the first and second laser beams.
The first and second laser beams can be associated with a number of color combinations. For example, the first wavelength can be associated with a green color and the second wavelength can be associated with a blue color.
It is to be appreciated that the laser apparatus can be implemented on various types of substrates and surface orientations. For example, the first crystalline surface region orientation can be a {20-21} plane, and first crystalline surface region orientation can also be a {30-31} plane.
A laser apparatus may also include other structures, such as a surface ridge architecture, a buried heterostructure architecture, and/or a plurality of metal electrodes for selectively exciting the active region. For example, an active region may comprise a first and second gallium and nitrogen containing cladding layers and an indium and gallium containing emitting layer positioned between the first and second cladding layers. A laser apparatus may further includes an n-type gallium and nitrogen containing material and an n-type cladding material overlying the n-type gallium and nitrogen containing material.
It is to be appreciated that embodiments of the present invention provide methods for obtaining multiple laser wavelengths and/or colors after the active regions have already been formed. More specifically, the gain-peak of the semiconductor material can be spatially manipulated post-growth using quantum well intermixing (QWI) processes and/or disordering of the light emitting layers. A QWI process makes use of the metastable nature of the compositional gradient found at heterointerfaces. The natural tendency for materials to interdiffuse is the basis for the intermixing process. Because the lower energy light emitting quantum well layers are surrounded by higher energy barriers of a different material composition, the interdiffusion of the well-barrier constituent atoms can result in higher energy light emitting layers and therefore a blue-shifted (or shorter) gain peak.
The rate at which this process takes place can be enhanced with the introduction of a catalyst. Using a lithographically definable catalyst patterning process, the QWI process can be made selective. This is the process by which many selective QWIs are formed, whether by the introduction of impurities or by the creation of vacancies. There are many techniques that have evolved over the years to accomplish selective intermixing, such as impurity-induced disordering (IID), impurity-free vacancy-enhanced disordering (IFVD), photoabsorption-induced disordering (PAID), and implantation-enhanced interdiffusion to name just a few. Such methods are capable of shifting the peak gain wavelengths by 1 nm to over 100 nm. By employing one of these or other QWI methods to detune the gain peak of adjacent laser devices, the combined lasing spectrum of the side-by-side devices can be altered.
In certain embodiments, a laser apparatus capable of multiple wavelength can be manufactured by using QWI processes described above. The apparatus may include a gallium and nitrogen containing substrate including a first crystalline surface region orientation. The apparatus also may include an active region comprising a barrier layer and a plurality of light emission layers, the plurality of light emission layers including a first emission layer and a second emission layer, the barrier layer being characterized by a first energy level, the first emission layer being characterized by a first wavelength and a second energy level, the second energy level being lower than the first energy level, the first emission layer having a first amount of material diffused from the barrier layer, the second emission layer being characterized by a second wavelength, a difference between the first gain peak wavelength and the second gain peak wavelength being at least 1 nm. For example, the second emission layer has a second amount of material diffused from the barrier layer.
An apparatus also may include a first cavity member overlying the first emission layer, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm, the first cavity member being configured to emit a first laser beam at the first wavelength. An apparatus may include a second cavity member overlying the second the emission layer, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm the second cavity member being configured to emit a second laser beam at the second wavelength. An apparatus can includes an output region wherein the first laser beam and the second laser beam are combined.
Depending on the application, the active region may include various types of material, such as InP material, GaAs material, and others. An apparatus may have optics with dichroic coatings for combining the first and the second laser beam. In certain embodiments, an apparatus includes a plurality of polarizing optics for combining the first and the second laser beams. In a certain embodiments, the first cavity member and the second cavity member share a common cleaved facet of mirror edges, which can be configured to combine the first and second laser beams. The first and second laser beams can both green but at slightly different wavelengths.
It is to be appreciated that a laser apparatus can be implemented on various types of substrates. For example, the first crystalline surface region orientation can be a {20-21} plane, and first crystalline surface region orientation can also be a {30-31} plane. The laser apparatus may also include other structures, such as a surface ridge architecture, a buried heterostructure architecture, and/or a plurality of metal electrodes for selectively exciting the active region For example, the active region comprises a first and second gallium and nitrogen containing cladding layers and an indium and gallium containing emitting layer positioned between the first and second cladding layers. The laser apparatus may further includes an n-type gallium and nitrogen containing material and an n-type cladding material overlying the n-type gallium and nitrogen containing material.
In various embodiments, laser diodes formed on different substrates are packaged together. It is to be appreciated that by sharing packaging of laser diodes, it is possible to produce small devices suitable for certain applications (e.g., pico-projectors), as multiple laser diodes can tightly fit together. For example, light engines having laser diodes in multiple colors are typically capable of reducing the amount of speckle in display applications. In addition, co-packaged laser diodes are often cost-efficient, as typically fewer optics are needed to combined laser beams from laser diodes as a result of sharing packages.
The present invention combines laser devices such as the dazzler device, the laser pointer device, or the laser aiming device described above with another weapon or deterrent device to form a multi-stage weapon or deterrent device. The novel multi-stage weapon and/or deterrent device provides the user with various levels of force to apply to the subject. Such weaponry or deterrent stages can range from a simple laser pointer device incident on a subject such that a subject is alerted that he/she is identified for escalated force if they do not comply with orders, to laser a dazzling device capable of overloading a subject's senses and rendering them temporarily incapacitated, to application of pepper spray to the subject's eyes such that the subject is temporarily blinded, to projecting rubber bullets at the subject to physically bruise or knock down the subject, and finally to a fatal weapon such as a live firearm. By having multiple stages including multiple deterrent and weaponry options available to a user, the user can systematically escalate the force based on the circumstances with the goal of deterring, debilitating, or killing a subject based on the situation. Such a weapon can effectively prevent fatalities because the user will be able to systematically increase the force level of the non-lethal options prior to using lethal force.
In certain embodiments, a laser device is combined with a Taser device capable of applying an electroshock. The electroshock can be realized by injecting an electrical current into a subject, which disrupts voluntary control of muscles causing “neuromuscular incapacitation”. In this embodiment, the laser device can be a dazzling device such that before a user engages the Taser the user will engage the less lethal dazzling device in effort to make the subject comply. If the subject does not comply with use of the dazzling device, the user would then engage the Taser device to expose the subject to a more severe electrical shock. In a variation of this embodiment, a chemical agent such as pepper spray or mace is used in place of or combined with the Taser device. The chemical agent would have a similar function as the Taser devices, which is to apply a more lethal impact to the subject relative to the dazzling device. An extension to this embodiment employs laser pointer devices to project a laser beam on the subject. By projecting the laser beam on the subject the subject can be made aware that more severe force will be used if he/she does not comply. The pointer device represents the lowest lethality. If the subject does not comply the user can engage the dazzling device. The dazzling device may comprise the same laser diodes forming the pointer device, but with the dazzling device operating at higher power. For example, the pointer device may operate between 5 mW and 25 mW and the dazzler device may operate between 25 mW and 800 mW. If the dazzling device is not effective in subduing the subject, the user could then apply the Taser or pepper spray device. In a further embodiment, a multi-stage weapon may comprise a firearm. In this embodiment, a user could apply lethal force to the non-compliant subject following application of the Taser and/or pepper spray.
The following embodiments A through E provide examples of multi-stage weapons containing laser diodes where the various stages are listed in order from the least lethal to the most lethal.
Stage 1: Laser diode dazzler device (non-lethal deterrent/weapon)
Stage 2: Taser device (non-lethal deterrent/weapon)
Stage 1: Laser diode dazzler device (non-lethal deterrent/weapon)
Stage 2: Pepper spray deploying device (non-lethal deterrent/weapon)
Stage 1: Laser diode dazzler device (non-lethal deterrent/weapon)
Stage 2: Taser device (non-lethal deterrent/weapon)
Stage 3: Firearm device (lethal weapon)
Stage 1: Laser diode pointer device (warning)
Stage 2: Laser diode dazzler device (non-lethal deterrent/weapon)
Stage 3: Taser device (non-lethal deterrent/weapon)
Stage 4: Firearm device (lethal weapon)
Stage 1: Laser diode pointer device (warning)
Stage 2: Laser diode aiming device (improving accuracy of deterrent/weapons)
Stage 3: Laser diode dazzler device (non-lethal deterrent/weapon)
Stage 4: Taser device (non-lethal deterrent/weapon)
Stage 5: Firearm device (lethal weapon)
An example of a non-legal device is disclosed in U.S. Pat. No. 8,098,474, which is incorporated by reference in its entirety. The device has a cartridge for a system that uses a stimulus signal for immobilizing a human or animal target includes a propellant and a projectile propelled away from about the cartridge by the propellant. The projectile includes a power supply, a waveform generator, and several electrodes. The waveform generator is powered by the power supply. The waveform generator includes a processor. The electrodes complete a stimulus delivery circuit to conduct a current through the target. The waveform generator generates the current to include a first series of pulses and a second series of pulses. The second series begins after the first series is completed. The first series has a first pulse repetition rate determined by the processor. Each pulse of the first series has a first pulse width of from about 10 microseconds to about 1000 microseconds. Each pulse of the first series delivers through the target a first charge per pulse of from about 50 microcoulombs to about 500 microcoulombs. The second series has a second pulse repetition rate determined by the processor to be less than the first pulse repetition rate. Each pulse of the second series delivers through the target a charge greater than a minimum charge per pulse. A product of the second pulse repetition rate and the minimum charge per pulse is greater than 250.
In an example, the present techniques can be combined with a Taser device. A Taser is an electroshock weapon line sold by Taser International. It uses electrical current to disrupt voluntary control of muscles causing “neuromuscular incapacitation”. Someone struck by a Taser experiences stimulation of his or her sensory nerves and motor nerves, resulting in strong involuntary muscle contractions. Tasers do not rely only on pain compliance, except when used in Drive Stun mode, and are thus preferred by some law enforcement personnel over non-Taser stun guns and other electronic control weapons.
In an alternative example, the techniques can be combined with pepper spray or other processes. In an example, pepper spray, also known as OC spray (from “Oleoresin Capsicum”), OC gas, and capsicum spray, is a lachrymatory agent (a chemical compound that irritates the eyes to cause tears, pain, and even temporary blindness) used in policing, riot control, crowd control, and personal self-defense, including defense against dogs and bears. Its inflammatory effects cause the eyes to close, taking away vision. This temporary blindness allows officers to more easily restrain subjects and permits persons using pepper spray for self-defense an opportunity to escape. Although considered a less-than-lethal agent, it has been deadly in rare cases, and concerns have been raised about a number of deaths in which pepper sprayed may have been a contributing factor.
In an example, the active ingredient in pepper spray is capsaicin, which is a chemical derived from the fruit of plants in the Capsicum genus, including chilies. Extraction of oleoresin capsicum from peppers requires capsicum to be finely ground, from which capsaicin is then extracted using an organic solvent such as ethanol. The solvent is then evaporated, and the remaining wax-like resin is the oleoresin capsicum. An emulsifier such as propylene glycol is used to suspend the OC in water, and pressurized to make it aerosol in pepper spray. The high performance liquid chromatography (HPLC) method is used to measure the amount of capsaicin and major capsaicinoids within pepper sprays. In an example, pepper spray is an inflammatory agent. It causes immediate closing of the eyes, difficulty breathing, runny nose, and coughing. The duration of its effects depends on the strength of the spray but the average full effect lasts around thirty to forty-five minutes, with diminished effects lasting for hours.
Embodiments of present invention is related to gallium and nitrogen laser diode devices. More specifically, embodiments of the present invention provide laser diode accessory devices containing one or more blue and/or green laser diodes characterized by a wavelength of about 420 nm to 500 nm or from 500 nm to 540 nm, respectively. In certain embodiments of the present invention, laser diode accessory devices containing one or more blue and/or green laser diodes characterized by a wavelength from about 420 nm to 540 nm are provided. The laser diode devices may operate at one or more wavelengths within the range of 420 nm to 540 nm, and which can be selected as suitable for a particular application. In various embodiments, the laser diode accessory devices include polar, non-polar, and/or semi-polar blue and/or green laser diodes. In a specific embodiment, the laser accessory device can serve various functionalities including a self-defense laser dazzler functioning to deter or temporarily incapacitate the subject matter, or a laser pointing device to project a laser beam onto an item or location, or a communication device where the laser beam is used to silently communicate a message from one location to another, or as a simple novelty device, a combination thereof, or other function. The blue or green laser diode accessory device can be configured to be integrated with or attached to a common and already widely deployed item such as a cell phone case, a cell phone, a smart phone, a camera, a key chain, a TV, a pen or pencil add-on, or other device.
In a preferred embodiment of the present invention the laser diode accessory device functions as a self-defense laser dazzler device to temporarily incapacitating a threatening subject or animal and providing safety to the user. The small size and high efficiency of the laser diode can enable the laser dazzler to be integrated with common items such as cell phones, cell phone cases, or key chains to provide a measure of self-defense to the user without having to carry a stand-alone self-defense item such as a bottle of pepper spray. As human beings become more civilized, non-lethal techniques have been developed to temporarily halt others that may be dangerous or hostile. In any potentially hostile situation such as a random attack on a civilian or a military security checkpoint, a critical need exists to identify potentially threatening individuals or groups prior to undertaking an escalation of force. Non-lethal threat detection and deterrent techniques are commonly used such as megaphones, tire spike strips, traffic cones, fencing, and hand gestures. However, many of these are impractical in impromptu security environments, and such measures may not show sufficient force to deter potentially hostile parties. If a serious threat is anticipated, warning shots can be fired, but this action may accelerate tensions and result in unwanted and unnecessary escalation of force if the shots are perceived incorrectly by the approaching party. Further, many civilians do not carry lethal firearms to fire warning shots from. Moreover, once the warning shots have been fired, a common next step in the escalation of force is to engage the approaching party directly with gunfire, which dramatically increases the likelihood of fatalities.
In an alternative preferred embodiment of the present invention the laser diode accessory device functions as a pointer device to project a laser beam onto a subject or a location to indicate a spatial location or object. Laser pointer devices are common in office settings for presentations such that a speaker can point toward the words or pictures that he/she is discussing to more clearly convey a message. In the prior art laser pointer configuration the laser pointer is typically a standalone object and is usually the size of a large pen or pencil. In certain embodiments of the present invention where green laser diodes and/or blue laser diodes are deployed as the laser source the size can be very small due to the tiny chip and package size and high efficiency reducing the power supply size. With this advance in laser technology laser pointers can be integrated into common objects such as cell phones, cell phone cases, key chains, and even as snap or slide-on accessories to pens and pencils. This transformative breakthrough of integrating laser pointer devices with common items will no longer limit laser pointers to the office setting and enable users to have continuous access to a laser pointer device. The effects of this continuous access will be many as pointers may become commonly used to point and indicate items or locations in every day settings. An example of this would be indicating an auto mechanic showing his client a failed component deep in the engine compartment that he could not otherwise touch with his hand due to inability to access it, the engine compartment is too hot to access, or the mechanic does not want to soil his hands.
In an alternative preferred embodiment of the present invention the laser diode accessory device functions as a communication device to silently signal a message to another party. The directionality of the laser beam makes it an ideal source for a line of sight or a specifically pointed beam of electromagnetic radiation such that the laser beam can be used to communicate to a precisely located subject without message interception. Several techniques can be deployed to carry the information ranging from the most basic message where the presence of the beam signals something specific to more complex messages carried by pulsing or modulating the laser beam in consistent with a telecommunications protocol.
In an example, photopic response peaks at 555 nm in humans when the eye is used to ambient light. In an example, scotopic response peaks at 507 nm, which occurs at very minimal light levels. Under “photopic” conditions, the rods are saturated and only the cones produce a visual signal. Under “scotopic” conditions, the light levels are too low to activate the cones, but the rods still respond. “Mesopic” conditions refer to the in-between state where both rods and cones are active, although there can be variations.
While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims.
This applications is a continuation in part of U.S. application Ser. No. 12/787,343 filed on May 25, 2010, now allowed, which claims priority to U.S. Provisional Application No. 61/182,104 filed on May 29, 2009, each of which is incorporated by reference in its entirety.
| Number | Name | Date | Kind |
|---|---|---|---|
| 4341592 | Shortes et al. | Jul 1982 | A |
| 4860687 | Frijlink | Aug 1989 | A |
| 4911102 | Manabe et al. | Mar 1990 | A |
| 5331654 | Jewell et al. | Jul 1994 | A |
| 5334277 | Nakamura | Aug 1994 | A |
| 5366953 | Char et al. | Nov 1994 | A |
| 5527417 | Lida et al. | Jun 1996 | A |
| 5607899 | Yoshida et al. | Mar 1997 | A |
| 5632812 | Hirabayashi | May 1997 | A |
| 5647945 | Matsuse et al. | Jul 1997 | A |
| 5696389 | Ishikawa et al. | Dec 1997 | A |
| 5821555 | Saito et al. | Oct 1998 | A |
| 5888907 | Tomoyasu et al. | Mar 1999 | A |
| 5926493 | O'Brien et al. | Jul 1999 | A |
| 5951923 | Rorie et al. | Sep 1999 | A |
| 6069394 | Hashimoto et al. | May 2000 | A |
| 6072197 | Horino et al. | Jun 2000 | A |
| 6129900 | Satoh et al. | Oct 2000 | A |
| 6147953 | Duncan | Nov 2000 | A |
| 6153010 | Kiyoku et al. | Nov 2000 | A |
| 6195381 | Botez et al. | Feb 2001 | B1 |
| 6239454 | Glew et al. | May 2001 | B1 |
| 6273948 | Porowski et al. | Aug 2001 | B1 |
| 6379985 | Cervantes et al. | Apr 2002 | B1 |
| 6398867 | D'Evelyn et al. | Jun 2002 | B1 |
| 6406540 | Harris et al. | Jun 2002 | B1 |
| 6451157 | Hubacek | Sep 2002 | B1 |
| 6489636 | Goetz et al. | Dec 2002 | B1 |
| 6586762 | Kozaki | Jul 2003 | B2 |
| 6596079 | Vaudo et al. | Jul 2003 | B1 |
| 6635904 | Goetz et al. | Oct 2003 | B2 |
| 6639925 | Niwa et al. | Oct 2003 | B2 |
| 6656615 | Dwilimski et al. | Dec 2003 | B2 |
| 6680959 | Tanabe et al. | Jan 2004 | B2 |
| 6686608 | Takahira | Feb 2004 | B1 |
| 6734461 | Shiomi et al. | May 2004 | B1 |
| 6755932 | Masuda et al. | Jun 2004 | B2 |
| 6764297 | Godwin et al. | Jul 2004 | B2 |
| 6765240 | Tischler et al. | Jul 2004 | B2 |
| 6784463 | Camras et al. | Aug 2004 | B2 |
| 6787814 | Udagawa | Sep 2004 | B2 |
| 6809781 | Setlur et al. | Oct 2004 | B2 |
| 6814811 | Ose | Nov 2004 | B2 |
| 6833564 | Shen et al. | Dec 2004 | B2 |
| 6858081 | Biwa et al. | Feb 2005 | B2 |
| 6858882 | Tsuda et al. | Feb 2005 | B2 |
| 6861130 | D'Evelyn et al. | Mar 2005 | B2 |
| 6920166 | Akasaka et al. | Jul 2005 | B2 |
| 7001577 | Zimmerman et al. | Feb 2006 | B2 |
| 7009199 | Hall | Mar 2006 | B2 |
| 7019325 | Li et al. | Mar 2006 | B2 |
| 7026756 | Shimizu et al. | Apr 2006 | B2 |
| 7033858 | Chai et al. | Apr 2006 | B2 |
| 7053413 | D'Evelyn et al. | May 2006 | B2 |
| 7063741 | D'Evelyn | Jun 2006 | B2 |
| 7078731 | D'Evelyn et al. | Jul 2006 | B2 |
| 7098487 | D'Evelyn et al. | Aug 2006 | B2 |
| 7112829 | Picard et al. | Sep 2006 | B2 |
| 7119372 | Stokes et al. | Oct 2006 | B2 |
| 7125453 | D'Evelyn et al. | Oct 2006 | B2 |
| 7128849 | Setlur et al. | Oct 2006 | B2 |
| 7160531 | Jacques et al. | Jan 2007 | B1 |
| 7170095 | Vaudo et al. | Jan 2007 | B2 |
| 7175704 | D'Evelyn et al. | Feb 2007 | B2 |
| 7198671 | Ueda | Apr 2007 | B2 |
| 7220324 | Baker et al. | May 2007 | B2 |
| 7252712 | Dwilinski et al. | Aug 2007 | B2 |
| 7303630 | Motoki et al. | Dec 2007 | B2 |
| 7312156 | Granneman et al. | Dec 2007 | B2 |
| 7316746 | D'Evelyn et al. | Jan 2008 | B2 |
| 7323723 | Ohtsuka et al. | Jan 2008 | B2 |
| 7338828 | Imer et al. | Mar 2008 | B2 |
| 7358542 | Radkov et al. | Apr 2008 | B2 |
| 7358543 | Chua et al. | Apr 2008 | B2 |
| 7368015 | D'Evelyn et al. | May 2008 | B2 |
| 7381391 | Spencer et al. | Jun 2008 | B2 |
| 7390359 | Miyanaga et al. | Jun 2008 | B2 |
| 7420261 | Dwiliski et al. | Sep 2008 | B2 |
| 7470555 | Matsumura | Dec 2008 | B2 |
| 7483466 | Uchida et al. | Jan 2009 | B2 |
| 7489441 | Scheible et al. | Feb 2009 | B2 |
| 7555025 | Yoshida | Jun 2009 | B2 |
| 7569206 | Spencer et al. | Aug 2009 | B2 |
| 7598104 | Teng et al. | Oct 2009 | B2 |
| 7625446 | D'Evelyn et al. | Dec 2009 | B2 |
| 7642122 | Tysoe et al. | Jan 2010 | B2 |
| 7691658 | Kaeding et al. | Apr 2010 | B2 |
| 7704324 | D'Evelyn et al. | Apr 2010 | B2 |
| 7705276 | Giddings et al. | Apr 2010 | B2 |
| 7709284 | Iza et al. | May 2010 | B2 |
| 7727332 | Habel et al. | Jun 2010 | B2 |
| 7733571 | Li | Jun 2010 | B1 |
| 7749326 | Kim et al. | Jul 2010 | B2 |
| 7759710 | Chiu et al. | Jul 2010 | B1 |
| 7806078 | Yoshida | Oct 2010 | B2 |
| 7858408 | Mueller et al. | Dec 2010 | B2 |
| 7862761 | Okushima et al. | Jan 2011 | B2 |
| 7923741 | Zhai et al. | Apr 2011 | B1 |
| 7939354 | Kyono et al. | May 2011 | B2 |
| 7968864 | Akita et al. | Jun 2011 | B2 |
| 7976630 | Poblenz et al. | Jul 2011 | B2 |
| 8017932 | Okamoto et al. | Sep 2011 | B2 |
| 8021481 | D'Evelyn | Sep 2011 | B2 |
| 8044412 | Murphy et al. | Oct 2011 | B2 |
| 8048225 | Poblenz et al. | Nov 2011 | B2 |
| 8097081 | D'Evelyn | Jan 2012 | B2 |
| 8124996 | Raring et al. | Feb 2012 | B2 |
| 8126024 | Raring | Feb 2012 | B1 |
| 8143148 | Raring et al. | Mar 2012 | B1 |
| 8148801 | D'Evelyn | Apr 2012 | B2 |
| 8242522 | Raring | Aug 2012 | B1 |
| 8247887 | Raring et al. | Aug 2012 | B1 |
| 8252662 | Poblenz et al. | Aug 2012 | B1 |
| 8254425 | Raring | Aug 2012 | B1 |
| 8259769 | Raring et al. | Sep 2012 | B1 |
| 8278656 | Mattmann et al. | Oct 2012 | B2 |
| 8284810 | Sharma et al. | Oct 2012 | B1 |
| 8294179 | Raring | Oct 2012 | B1 |
| 8303710 | D'Evelyn | Nov 2012 | B2 |
| 8306081 | Schmidt et al. | Nov 2012 | B1 |
| 8314429 | Raring et al. | Nov 2012 | B1 |
| 8323405 | D'Evelyn | Dec 2012 | B2 |
| 8329511 | D'Evelyn | Dec 2012 | B2 |
| 8351478 | Raring et al. | Jan 2013 | B2 |
| 8354679 | D'Evelyn et al. | Jan 2013 | B1 |
| 8355418 | Raring et al. | Jan 2013 | B2 |
| 8427590 | Raring et al. | Apr 2013 | B2 |
| 8430958 | D'Evelyn | Apr 2013 | B2 |
| 8435347 | D'Evelyn et al. | May 2013 | B2 |
| 8444765 | D'Evelyn | May 2013 | B2 |
| 8451876 | Raring et al. | May 2013 | B1 |
| 8461071 | D'Evelyn | Jun 2013 | B2 |
| 8465588 | Poblenz et al. | Jun 2013 | B2 |
| 8509275 | Raring et al. | Aug 2013 | B1 |
| 8510979 | Mortimer | Aug 2013 | B1 |
| 8837546 | Raring et al. | Sep 2014 | B1 |
| 20010011935 | Lee et al. | Aug 2001 | A1 |
| 20010048114 | Morita et al. | Dec 2001 | A1 |
| 20020027933 | Tanabe et al. | Mar 2002 | A1 |
| 20020050488 | Nikitin et al. | May 2002 | A1 |
| 20020085603 | Okumura | Jul 2002 | A1 |
| 20020105986 | Yamasaki | Aug 2002 | A1 |
| 20020171092 | Goetz et al. | Nov 2002 | A1 |
| 20020189532 | Motoki et al. | Dec 2002 | A1 |
| 20030000453 | Unno et al. | Jan 2003 | A1 |
| 20030001238 | Ban | Jan 2003 | A1 |
| 20030012243 | Okumura | Jan 2003 | A1 |
| 20030020087 | Goto et al. | Jan 2003 | A1 |
| 20030027014 | Johnson et al. | Feb 2003 | A1 |
| 20030140845 | D'Evelyn et al. | Jul 2003 | A1 |
| 20030140846 | Biwa et al. | Jul 2003 | A1 |
| 20030145784 | Thompson et al. | Aug 2003 | A1 |
| 20030178617 | Appenzeller et al. | Sep 2003 | A1 |
| 20030183155 | D'Evelyn et al. | Oct 2003 | A1 |
| 20030200931 | Goodwin | Oct 2003 | A1 |
| 20030209191 | Purdy | Nov 2003 | A1 |
| 20030216011 | Nakamura et al. | Nov 2003 | A1 |
| 20030232512 | Dickinson et al. | Dec 2003 | A1 |
| 20040000266 | D'Evelyn et al. | Jan 2004 | A1 |
| 20040023427 | Chua et al. | Feb 2004 | A1 |
| 20040025787 | Selbrede et al. | Feb 2004 | A1 |
| 20040060518 | Nakamura et al. | Apr 2004 | A1 |
| 20040099213 | Adomaitis et al. | May 2004 | A1 |
| 20040104391 | Maeda et al. | Jun 2004 | A1 |
| 20040146264 | Auner et al. | Jul 2004 | A1 |
| 20040151222 | Sekine | Aug 2004 | A1 |
| 20040196877 | Kawakami et al. | Oct 2004 | A1 |
| 20040222357 | King et al. | Nov 2004 | A1 |
| 20040233950 | Furukawa et al. | Nov 2004 | A1 |
| 20040247275 | Vakhshoori et al. | Dec 2004 | A1 |
| 20040262624 | Akita et al. | Dec 2004 | A1 |
| 20050040384 | Tanaka et al. | Feb 2005 | A1 |
| 20050072986 | Sasaoka | Apr 2005 | A1 |
| 20050098095 | D'Evelyn et al. | May 2005 | A1 |
| 20050128469 | Hall et al. | Jun 2005 | A1 |
| 20050152820 | D'Evelyn et al. | Jul 2005 | A1 |
| 20050168564 | Kawaguchi et al. | Aug 2005 | A1 |
| 20050205215 | Giddings et al. | Sep 2005 | A1 |
| 20050214992 | Chakraborty et al. | Sep 2005 | A1 |
| 20050218413 | Matsumoto et al. | Oct 2005 | A1 |
| 20050224826 | Keuper et al. | Oct 2005 | A1 |
| 20050229855 | Raaijmakers | Oct 2005 | A1 |
| 20050230701 | Huang | Oct 2005 | A1 |
| 20050247260 | Shin et al. | Nov 2005 | A1 |
| 20050285128 | Scherer et al. | Dec 2005 | A1 |
| 20060030738 | Vanmaele et al. | Feb 2006 | A1 |
| 20060032428 | Dwilinski et al. | Feb 2006 | A1 |
| 20060033009 | Kobayashi et al. | Feb 2006 | A1 |
| 20060037529 | D'Evelyn | Feb 2006 | A1 |
| 20060037530 | Dwilinski et al. | Feb 2006 | A1 |
| 20060038193 | Wu et al. | Feb 2006 | A1 |
| 20060048699 | D'Evelyn et al. | Mar 2006 | A1 |
| 20060060131 | Atanackovic | Mar 2006 | A1 |
| 20060066319 | Dallenbach et al. | Mar 2006 | A1 |
| 20060077795 | Kitahara et al. | Apr 2006 | A1 |
| 20060078022 | Kozaki et al. | Apr 2006 | A1 |
| 20060079082 | Bruhns et al. | Apr 2006 | A1 |
| 20060086319 | Kasai et al. | Apr 2006 | A1 |
| 20060096521 | D'Evelyn et al. | May 2006 | A1 |
| 20060118799 | D'Evelyn et al. | Jun 2006 | A1 |
| 20060124051 | Yoshioka et al. | Jun 2006 | A1 |
| 20060126688 | Kneissl | Jun 2006 | A1 |
| 20060144334 | Yim et al. | Jul 2006 | A1 |
| 20060175624 | Sharma et al. | Aug 2006 | A1 |
| 20060177362 | D'Evelyn et al. | Aug 2006 | A1 |
| 20060189098 | Edmond | Aug 2006 | A1 |
| 20060193359 | Kuramoto | Aug 2006 | A1 |
| 20060205199 | Baker et al. | Sep 2006 | A1 |
| 20060207497 | D'Evelyn et al. | Sep 2006 | A1 |
| 20060213429 | Motoki et al. | Sep 2006 | A1 |
| 20060216416 | Sumakeris et al. | Sep 2006 | A1 |
| 20060256482 | Araki et al. | Nov 2006 | A1 |
| 20060256559 | Bitar | Nov 2006 | A1 |
| 20060288928 | Eom et al. | Dec 2006 | A1 |
| 20070036186 | Corzine et al. | Feb 2007 | A1 |
| 20070039226 | Stokes | Feb 2007 | A1 |
| 20070057337 | Kano et al. | Mar 2007 | A1 |
| 20070081857 | Yoon | Apr 2007 | A1 |
| 20070086916 | LeBoeuf et al. | Apr 2007 | A1 |
| 20070093073 | Farrell et al. | Apr 2007 | A1 |
| 20070101932 | Schowalter et al. | May 2007 | A1 |
| 20070105351 | Motoki et al. | May 2007 | A1 |
| 20070110112 | Sugiura | May 2007 | A1 |
| 20070120141 | Moustakas et al. | May 2007 | A1 |
| 20070141819 | Park et al. | Jun 2007 | A1 |
| 20070142204 | Park et al. | Jun 2007 | A1 |
| 20070151509 | Park et al. | Jul 2007 | A1 |
| 20070153866 | Shchegrov et al. | Jul 2007 | A1 |
| 20070158785 | D'Evelyn et al. | Jul 2007 | A1 |
| 20070163490 | Habel et al. | Jul 2007 | A1 |
| 20070166853 | Guenther et al. | Jul 2007 | A1 |
| 20070178039 | D'Evelyn et al. | Aug 2007 | A1 |
| 20070181056 | D'Evelyn et al. | Aug 2007 | A1 |
| 20070184637 | Haskell et al. | Aug 2007 | A1 |
| 20070197004 | Dadgar et al. | Aug 2007 | A1 |
| 20070210074 | Maurer et al. | Sep 2007 | A1 |
| 20070215033 | Maeda et al. | Sep 2007 | A1 |
| 20070217462 | Yamasaki | Sep 2007 | A1 |
| 20070218703 | Kaeding et al. | Sep 2007 | A1 |
| 20070242716 | Samal et al. | Oct 2007 | A1 |
| 20070252164 | Zhong et al. | Nov 2007 | A1 |
| 20070259464 | Bour et al. | Nov 2007 | A1 |
| 20070272933 | Kim et al. | Nov 2007 | A1 |
| 20070274359 | Takeuchi et al. | Nov 2007 | A1 |
| 20070280320 | Feezell et al. | Dec 2007 | A1 |
| 20080006831 | Ng | Jan 2008 | A1 |
| 20080025360 | Eichler et al. | Jan 2008 | A1 |
| 20080029152 | Milshtein et al. | Feb 2008 | A1 |
| 20080083741 | Giddings et al. | Apr 2008 | A1 |
| 20080083970 | Kamber et al. | Apr 2008 | A1 |
| 20080087919 | Tysoe et al. | Apr 2008 | A1 |
| 20080092812 | McDiarmid et al. | Apr 2008 | A1 |
| 20080095492 | Son et al. | Apr 2008 | A1 |
| 20080121916 | Teng et al. | May 2008 | A1 |
| 20080124817 | Bour et al. | May 2008 | A1 |
| 20080149949 | Nakamura et al. | Jun 2008 | A1 |
| 20080156254 | Dwilinski et al. | Jul 2008 | A1 |
| 20080164578 | Tanikella et al. | Jul 2008 | A1 |
| 20080173735 | Mitrovic et al. | Jul 2008 | A1 |
| 20080191192 | Feezell et al. | Aug 2008 | A1 |
| 20080191223 | Nakamura et al. | Aug 2008 | A1 |
| 20080193363 | Tsuji | Aug 2008 | A1 |
| 20080198881 | Farrell et al. | Aug 2008 | A1 |
| 20080210958 | Senda et al. | Sep 2008 | A1 |
| 20080217745 | Miyanaga et al. | Sep 2008 | A1 |
| 20080232416 | Okamoto et al. | Sep 2008 | A1 |
| 20080251020 | Franken et al. | Oct 2008 | A1 |
| 20080283851 | Akita | Nov 2008 | A1 |
| 20080285609 | Ohta et al. | Nov 2008 | A1 |
| 20080291961 | Kamikawa et al. | Nov 2008 | A1 |
| 20080298409 | Yamashita et al. | Dec 2008 | A1 |
| 20080303033 | Brandes | Dec 2008 | A1 |
| 20080308815 | Kasai et al. | Dec 2008 | A1 |
| 20080315179 | Kim et al. | Dec 2008 | A1 |
| 20090021723 | De Lega | Jan 2009 | A1 |
| 20090058532 | Kikkawa et al. | Mar 2009 | A1 |
| 20090066241 | Yokoyama | Mar 2009 | A1 |
| 20090078944 | Kubota et al. | Mar 2009 | A1 |
| 20090080857 | St. John-Larkin | Mar 2009 | A1 |
| 20090081857 | Hanser et al. | Mar 2009 | A1 |
| 20090081867 | Taguchi et al. | Mar 2009 | A1 |
| 20090092536 | Kawabata et al. | Apr 2009 | A1 |
| 20090141765 | Kohda et al. | Jun 2009 | A1 |
| 20090153752 | Silverstein | Jun 2009 | A1 |
| 20090159869 | Ponce et al. | Jun 2009 | A1 |
| 20090218593 | Kamikawa et al. | Sep 2009 | A1 |
| 20090229519 | Saitoh | Sep 2009 | A1 |
| 20090250686 | Sato et al. | Oct 2009 | A1 |
| 20090267100 | Miyake et al. | Oct 2009 | A1 |
| 20090273005 | Lin | Nov 2009 | A1 |
| 20090301387 | D'Evelyn | Dec 2009 | A1 |
| 20090301388 | D'Evelyn | Dec 2009 | A1 |
| 20090309110 | Raring et al. | Dec 2009 | A1 |
| 20090309127 | Raring et al. | Dec 2009 | A1 |
| 20090316116 | Melville et al. | Dec 2009 | A1 |
| 20090320744 | D'Evelyn | Dec 2009 | A1 |
| 20090320745 | D'Evelyn et al. | Dec 2009 | A1 |
| 20090321778 | Chen et al. | Dec 2009 | A1 |
| 20100001300 | Raring et al. | Jan 2010 | A1 |
| 20100003492 | D'Evelyn | Jan 2010 | A1 |
| 20100003942 | Ikeda et al. | Jan 2010 | A1 |
| 20100006546 | Young et al. | Jan 2010 | A1 |
| 20100006873 | Raring et al. | Jan 2010 | A1 |
| 20100025656 | Raring et al. | Feb 2010 | A1 |
| 20100031872 | D'Evelyn | Feb 2010 | A1 |
| 20100031873 | D'Evelyn | Feb 2010 | A1 |
| 20100031874 | D'Evelyn | Feb 2010 | A1 |
| 20100031875 | D'Evelyn | Feb 2010 | A1 |
| 20100031876 | D'Evelyn | Feb 2010 | A1 |
| 20100044718 | Hanser et al. | Feb 2010 | A1 |
| 20100075175 | Poblenz et al. | Mar 2010 | A1 |
| 20100096615 | Okamoto et al. | Apr 2010 | A1 |
| 20100104495 | Kawabata et al. | Apr 2010 | A1 |
| 20100108985 | Chung et al. | May 2010 | A1 |
| 20100109126 | Arena | May 2010 | A1 |
| 20100140745 | Khan et al. | Jun 2010 | A1 |
| 20100147210 | D'Evelyn | Jun 2010 | A1 |
| 20100151194 | D'Evelyn | Jun 2010 | A1 |
| 20100189981 | Poblenz et al. | Jul 2010 | A1 |
| 20100195687 | Okamoto et al. | Aug 2010 | A1 |
| 20100220262 | DeMille et al. | Sep 2010 | A1 |
| 20100276663 | Enya et al. | Nov 2010 | A1 |
| 20100295054 | Okamoto et al. | Nov 2010 | A1 |
| 20100302464 | Raring et al. | Dec 2010 | A1 |
| 20100304874 | Abatemarco | Dec 2010 | A1 |
| 20100309943 | Chakraborty et al. | Dec 2010 | A1 |
| 20100316075 | Raring et al. | Dec 2010 | A1 |
| 20100327291 | Preble et al. | Dec 2010 | A1 |
| 20110031508 | Hamaguchi et al. | Feb 2011 | A1 |
| 20110056429 | Raring et al. | Mar 2011 | A1 |
| 20110057167 | Ueno et al. | Mar 2011 | A1 |
| 20110062415 | Ohta et al. | Mar 2011 | A1 |
| 20110064100 | Raring et al. | Mar 2011 | A1 |
| 20110064101 | Raring et al. | Mar 2011 | A1 |
| 20110064102 | Raring et al. | Mar 2011 | A1 |
| 20110064103 | Ohta et al. | Mar 2011 | A1 |
| 20110073888 | Ueno et al. | Mar 2011 | A1 |
| 20110075694 | Yoshizumi et al. | Mar 2011 | A1 |
| 20110100291 | D'Evelyn | May 2011 | A1 |
| 20110103418 | Hardy et al. | May 2011 | A1 |
| 20110129669 | Fujito et al. | Jun 2011 | A1 |
| 20110150020 | Haase et al. | Jun 2011 | A1 |
| 20110164637 | Yoshizumi et al. | Jul 2011 | A1 |
| 20110180781 | Raring et al. | Jul 2011 | A1 |
| 20110183498 | D'Evelyn | Jul 2011 | A1 |
| 20110186874 | Shum | Aug 2011 | A1 |
| 20110186887 | Trottier et al. | Aug 2011 | A1 |
| 20110216795 | Hsu et al. | Sep 2011 | A1 |
| 20110220912 | D'Evelyn | Sep 2011 | A1 |
| 20110247556 | Raring et al. | Oct 2011 | A1 |
| 20110256693 | D'Evelyn et al. | Oct 2011 | A1 |
| 20110262773 | Poblenz et al. | Oct 2011 | A1 |
| 20110281422 | Wang et al. | Nov 2011 | A1 |
| 20110286484 | Raring et al. | Nov 2011 | A1 |
| 20120000415 | D'Evelyn et al. | Jan 2012 | A1 |
| 20120073494 | D'Evelyn | Mar 2012 | A1 |
| 20120091465 | Krames et al. | Apr 2012 | A1 |
| 20120104359 | Felker et al. | May 2012 | A1 |
| 20120118223 | D'Evelyn | May 2012 | A1 |
| 20120119218 | Su | May 2012 | A1 |
| 20120137966 | D'Evelyn et al. | Jun 2012 | A1 |
| 20120178198 | Raring et al. | Jul 2012 | A1 |
| 20120187371 | Raring et al. | Jul 2012 | A1 |
| 20120199952 | D'Evelyn et al. | Aug 2012 | A1 |
| 20120314398 | Raring et al. | Dec 2012 | A1 |
| 20130016750 | Raring et al. | Jan 2013 | A1 |
| 20130022064 | Raring et al. | Jan 2013 | A1 |
| 20130044782 | Raring | Feb 2013 | A1 |
| 20130064261 | Sharma et al. | Mar 2013 | A1 |
| 20130119401 | D'Evelyn et al. | May 2013 | A1 |
| Number | Date | Country |
|---|---|---|
| 101009347 | Mar 1987 | CN |
| 1538534 | Oct 2004 | CN |
| 1702836 | Nov 2005 | CN |
| 101079463 | Nov 2007 | CN |
| 101099245 | Jan 2008 | CN |
| 1171692 | Apr 2008 | CN |
| 3-287770 | Dec 1991 | JP |
| 07-162081 | Jun 1995 | JP |
| 2002-009402 | Jan 2002 | JP |
| 2002-185082 | Jun 2002 | JP |
| 2004-503923 | Feb 2004 | JP |
| 2004-152841 | May 2004 | JP |
| 2004-186527 | Jul 2004 | JP |
| 2005-289797 | Oct 2005 | JP |
| 2006-091285 | Apr 2006 | JP |
| 2006-120923 | May 2006 | JP |
| 2007-173467 | Jul 2007 | JP |
| 2007-529910 | Oct 2007 | JP |
| 2007-068398 | Apr 2008 | JP |
| 2008-311640 | Dec 2008 | JP |
| 2009-021506 | Jan 2009 | JP |
| 2009-158893 | Jul 2009 | JP |
| 2009-170708 | Jul 2009 | JP |
| 2006057463 | Jan 2006 | WO |
| 2007004495 | Nov 2007 | WO |
| 2008-041521 | Apr 2008 | WO |
| 2010068916 | Jun 2010 | WO |
| WO 2010120819 | Oct 2010 | WO |
| 2012016033 | Feb 2012 | WO |
| Entry |
|---|
| Communication from the Japanese Patent Office re 2012-011589 dated Jul. 4, 2013, 15 pages. |
| USPTO Notice of Allowance for U.S. Appl. No. 12/789,303 dated Dec. 21, 2012, 5 pages. |
| USPTO Notice of Allowance for U.S. Appl. No. 13/853,694 dated Sep. 3, 2013, 8 pages. |
| Notice of Allowance of Sep. 16, 2014 for U.S. Appl. No. 13/752,158, 9 pages. |
| Notice of Allowance of Mar. 28, 2014, 2014 for U.S. Appl. No. 13/937,981, 34 pages. |
| Final Office Action of Apr. 1, 2014 for U.S. Appl. No. 13/752,158, 27 pages. |
| Abare “Cleaved and Etched Facet Nitride Laser Diodes,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, pp. 505-509 (May 1998). |
| Aoki et al., “InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD, 1993, ”IEEE J Quantum Electronics, vol. 29, pp. 2088-2096. |
| Asano et al., “100-mW kink-Free Blue-Violet Laser Diodes with Low Aspect Ratio,” 2003, IEEE Journal of Quantum Electronics, vol. 39, No. 1, pp. 135-140. |
| Asif Khan “Cleaved cavity optically pumped InGaN—GaN laser grown on spinel substrates,” Appl. Phys. Lett. 69 (16), pp. 2418-2420 (Oct. 14, 1996). |
| Bernardini et al., “Spontaneous Polarization and Piezoelectric Constants of III-V Nitrides,” 1997, Physical Review B, vol. 56, No. 16, pp. 10024-10027. |
| Caneau et al., “Studies on Selective OMVPE of (Ga,In)/(As,P),” 1992, Journal of Crystal Growth, vol. 124, pp. 243-248. |
| Chen et al., “Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures,” 2007, Advanced Materials, vol. 19, pp. 1707-1710. |
| D'Evelyn et al., “Bulk GaN Crystal Growth by the High-Pressure Ammonothermal Method,” Journal of Crystal Growth, 2007, vol. 300, pp. 11-16. |
| Franssila, ‘Tools for CVD and Epitaxy’, Introduction to Microfabrication, 2004, pp. 329-336. |
| Fujii et al., “Increase in the Extraction Efficiency of GaN-based Light-Emitting Diodes Via Surface Roughening,” 2004, Applied Physics Letters, vol. 84, No. 6, pp. 855-857. |
| Funato et al., “Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar (1122) GaN Substrates,” 2006, Journal of Japanese Applied Physics, vol. 45, No. 26, pp. L659-L662. |
| Funato et al., “Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting,” 2008, Applied Physics Express, vol. 1, pp. 011106-1-011106-3. |
| Founta et al., ‘Anisotropic Morphology of Nonpolar a-Plane GaN Quantum Dots and Quantum Wells,’ Journal of Applied Physics, vol. 102, vol. 7, 2007, pp. 074304-1-074304-6. |
| Gardner et al. “Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2”, Applied Physics Letters 91, 243506 (2007). |
| hap ://techon.nikkeibp. co jp/english/NEWS—EN/20080122/146009. |
| Hiramatsu et al., Selective Area Growth and Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy and Hydride Vapor Phase Epitaxy. Materials Science and Engineering B, vol. 59, May 6, 1999. pp. 104-111 |
| Iso et al., “High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 40, pp. L960-L962 |
| Kendall et al., “Energy Savings Potential of Solid State Lighting in General Lighting Applications,” 2001, Report for the Department of Energy, pp. 1-35. |
| Kim et al, “Improved Electroluminescence on Nonpolar m-plane InGaN/GaN Qantum Well LEDs”, 2007, Physica Status Solidi (RRL), vol. 1, No. 3, pp. 125-127. |
| Kuramoto et al., “Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates,” 2007, Journal of Japanese Applied Physics, vol. 40, pp. 925-927. |
| Lin et al. “Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells,” Japanese Journal of Applied Physics, vol. 43, No. 10, pp. 7032-7035 (2004). |
| Masui et al. “Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature,” Jpn. J. Appl. Phys. 46 pp. 7309-7310 (2007). |
| Michiue et al. “Recent development of nitride LEDs and LDs,” Proceedings of SPIE, vol. 7216, 72161Z (2009). |
| Nakamura et al., “InGaN/Gan/AlGaN-based Laser Diodes with Modulation-doped Strained-layer Superlattices Grown on an Epitaxially Laterally Grown GaN Substrate”, 1998, Applied Physics Letters, vol. 72, No. 12, pp. 211-213. |
| Nam et al., “Later Epitaxial Overgrowth of GaN films on SiO2 Areas Via Metalorganic Vapor Phase Epitaxy,” 1998, Journal of Electronic Materials, vol. 27, No. 4, pp. 233-237. |
| Okamoto et al., “Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers,” 2007, Journal of Japanese Applied Physics, vol. 46, No. 35, pp. 820-822. |
| Okamoto et. al “Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes” The Japan Society of I Applied Physics JJAP Express LEtter, vol. 46, No. 9, 2007 pp. L 187-L 189. |
| Okamoto et al. in “High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolar m-Plane Gallium Nitride,” The Japan Society of Applied Physics, Applied Physics Express 1 (Jun. 2008). |
| Park, “Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells,” Journal of Applied Physics vol. 91, No. 12, pp. 9904-9908 (Jun. 2002). |
| Purvis, “Changing the Crystal Face of Gallium Nitride.” The Advance Semiconductor Magazine, vol. 18, No. 8, Nov. 2005. |
| Romanov “Strain-induced polarization in wurtzite III-nitride semipolar layers,” Journal of Applied Physics 100, pp. 023522-1 through 023522-10 (Jul. 25, 2006). |
| Sato et al., “High Power and High Efficiency Green Light Emitting Diode on free-Standing Semipolar (1122) Bulk GaN Substrate,” 2007.Physica Status Solidi (RRL), vol. 1, pp. 162-164. |
| Sato et al., “Optical Properties of Yellow Light-Emitting-Diodes Grown on Semipolar (1122) Bulk GaN Substrate,” 2008, Applied Physics Letter, vol. 92, No. 22, pp. 221110-1-221110-3. |
| Schmidt et al., “Demonstration of Nonpolar m-plane InGaN/GaN Laser Diodes,” 2007, Journal of Japanese Applied Physics, vol. 46, No. 9, pp. 190-191. |
| Schmidt et al., “High Power and High External Efficiency m-plane InGaN Light Emitting Diodes,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 7, pp. L126-L128. |
| Schoedl “Facet degradation of GaN heterostructure laser diodes,” Journal of Applied Physics vol. 97, issue 12, pp. 123102-1 to 123102-8 (2005). |
| Shchekin et al., “High Performance Thin-film Flip-Chip InGaN—GaN Light-emitting Diodes,” 2006, Applied Physics Letters, vol. 89, pp. 071109-071109-3. |
| Shen et al. “Auger recombination in InGaN measured by photoluminescence,” Applied Physics Letters, 91, 141101 (2007). |
| Sizov et al., “500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells,” 2009, Applied Physics Express, vol. 2, pp. 071001-1-071001-3. |
| Tomiya et al. Dislocation related issues in the degradation of GaN-based laser diodes, IEEE Journal of Selected Topics in Quantum Electronics vol. 10, No. 6 (2004). |
| Tyagi et al., “High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates,” 2007, Japanese Journal of Applied Physics, vol. 46, No. 7, pp. L129-L131. |
| Tyagi et al., ‘Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates,’ Japanese Journal of Applied Physics, vol. 46, No. 19, 2007, pp. L444-L445. |
| Tyagi et al., ‘Partial Strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (1122) GaN free standing substrates’, Applied Physics Letters 95, (2009) pp. 251905. |
| Uchida et al.,“Recent Progress in High-Power Blue-violet Lasers,” 2003, IEEE Journal of Selected Topics in Quantum Electronics, vol. 9, No. 5, pp. 1252-1259. |
| Waltereit et al., “Nitride Semiconductors Free of Electrostatic Fields for Efficient White Light-emitting Diodes,” 2000, Nature: International Weekly Journal of Science, vol. 406, pp. 865-868. |
| Wierer et al., “High-power AlGaInN Flip-chip Light-emitting Diodes,” 2001, Applied Physics Letters, vol. 78, No. 22, pp. 3379-3381. |
| Yamaguchi, A. Atsushi, “Anisotropic Optical Matrix Elements in Strained GaN-quantum Wells with Various Substrate Orientations,” 2008, Physica Status Solidi (PSS), vol. 5, No. 6, pp. 2329-2332. |
| Yoshizumi et al. “Continuous-Wave operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20-21} GaN Substrates,” Applied Physics Express 2 (2009). |
| Yu et al., “Multiple Wavelength Emission from Semipolar InGaN/GaN Quantum Wells Selectively Grown by MOCVD,” in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2007), paper JTuA92. |
| Zhong et al., “Demonstration of High Power Blue-Green Light Emitting Diode on Semipolar (1122) Bulk GaN Substrate,” 2007, Electron Letter, vol. 43, No. 15, pp. 825-826. |
| Zhong et al., “High Power and High Efficiency Blue Light Emitting Diode on Freestanding Semipolar (1122) Bulk GaN Substrate,” 2007, Applied Physics Letter, vol. 90, No. 23, pp. 233504-233504-3. |
| International Search Report of PCT Application No. PCT/US2009/047107, dated Sep. 29, 2009, 4 pages. |
| International Search Report of PCT Application No. PCT/US2009/046786, dated May 13, 2010, 2 pages. |
| International Search Report of PCT Application No. PCT/US2009/52611, dated Sep. 29, 2009, 3 pages. |
| International Search Report & Written Opinion ofPCT Application No. PCT/US2010/030939, dated Jun. 16, 2010, 9 pages. |
| International Search Report & Written Opinion of PCT Application No. PCT/US2010/049172, dated Nov. 17, 2010, 7 pages. |
| International Search Report of PCT Application No. PCT/US2011/037792, dated Sep. 8, 2011, 2 pages. |
| International Search Report of PCT Application No. PCT/US2009/067745, dated Feb. 5, 2010, 1 page total. |
| Choi et al., 2.51 microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process, Applied Physics Letters, 2007, 91(6), 061120. |
| Fukuda et al., ‘Prospects for the Ammonothermal Growth of Large GaN Crystal,’ Journal of Crystal Growth, vol. 305, 2007, pp. 304-310. |
| Lide et al., ‘Thermal Conductivity of Ceramics and Other Insulating Materials,’ CRC Handbook of Chemistry and Physics, 91st Edition, 2010-2011, pp. 12-203 and 12-204. |
| http://www.matbase.com/material/non-ferrous-metals/other/molybdenum/properties, Data Table For: Non-Ferrous Metals: Other Metals: Molybdenum, Mar. 28, 2011, pp. 1. |
| Pattison et al., ‘Gallium Nitride Based Microcavity Light Emitting Diodes With 2? Effective Cavity Thickness’, Applied Physics Letters, vol. 90, Issue 3, 031111 (2007) 3 pg. |
| Sarva et al., ‘Dynamic Compressive Strength of Silicon Carbide Under Uniaxial Compression,’ Material Sciences and Engineering, vol. A317, 2001, pp. 140-144. |
| Weisbuch et al., ‘Recent results and latest views on microcavity LEDs’, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, ed. By S.A. Stockman et al., Proc. SPIE, vol. 5366, I p. 1-19 (2004). |
| Altoukhov et al., ‘High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers’, Applied Physics Letters, vol. 95, 2009, pp. 191102-1-3. |
| Callahan et al., ‘Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)’, MRS Internet Journal Nitride Semiconductor Research, vol. 4, No. 10, 1999, pp. 1-6. |
| Dorsaz et al., ‘Selective oxidation of AlInN Layers for current confinement III-nitride devices’, Applied Physics Letters, vol. 87, 2005, pp. 072102. |
| Ehrentraut et al., ‘The ammonothermal crystal growth of gallium nitride-A technique on the up rise’, Proceedings IEEE, 2010, 98(7), pp. 1316-1323. |
| Fang, ‘Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy’, Physica Status Solidi, vol. 5, No. 6, 2008, pp. 1508-1511. |
| Fujito et al., ‘Development of bulk GaN crystals and nonpolar/semipolar substrates by HVPE’, MRS Bulletin, 2009,34, 5, pp. 313-317. |
| Gladkov et al., ‘Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe’, Journal of Crystal Growth, 312,2010, pp. 1205-1209. |
| Grzegory, ‘High pressure growth of bulk GaN from Solutions in gallium’, Journal of Physics Condensed Matter, vol. 13, 2001, pp. 6875-6892. |
| Moutanabbir, ‘Bulk GaN Ion Cleaving’, Journal of Electronic Materials, vol. 39, 2010, pp. 482-488. |
| Oshima et al., ‘Thermal and Optical Properties of Bulk GaN Crystals Fabricated Through Hydride Vapor Phase Epitaxy With Void-Assisted Separation’, Journal of Applied Physics, vol. 98, No. 10, 2005, pp. 103509-1-103509-4. |
| Porowski, ‘High Resistivity GaN Single Crystalline Substrates’, Acta Physica Polonica A, vol. 92, No. 5, 1997, pp. 958-962. |
| Porowski, ‘Near Defect Free GaN Substrates’, Journal ofNitride Semiconductor, 1999, pp. 1-11. |
| Sharma et al., ‘Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching’, Applied Physics Letters, vol. 87, 2005, pp. 051107. |
| Wang et al., ‘Ammonothermal Growth of GaN Crystals in Alkaline Solutions’, Journal of Crystal Growth, vol. 287, 2006, pp. 376-380. |
| Non-Final Office Action of Dec. 17, 2012 for U.S. Appl. No. 12/787,343, 8 pages. |
| Notice of Allowance of Jun. 10, 2013, 2013 for U.S. Appl. No. 12/787,343, 12 pages. |
| Non-Final Office Action of Oct. 7, 2013 for U.S. Appl. No. 13/752,158, 21 pages. |
| Notice of Allowance of Nov. 27, 2013, 2013 for U.S. Appl. No. 13/937,981, 12 pages. |
| Number | Date | Country | |
|---|---|---|---|
| 61182104 | May 2009 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 12787343 | May 2010 | US |
| Child | 13938048 | US |
