Number | Date | Country | Kind |
---|---|---|---|
10-220221 | Aug 1998 | JP |
Number | Name | Date | Kind |
---|---|---|---|
5974069 | Tanaka et al. | Oct 1999 | A |
6031858 | Hatakoshi et al. | Feb 2000 | A |
6067309 | Onomura et al. | May 2000 | A |
Number | Date | Country |
---|---|---|
9191160 | Jul 1997 | JP |
Entry |
---|
“Characteristics of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes”; S. Nakamura; MRS Internet Journal; Nitride Semiconductor Research; vol. 2, Article 5, Mar. 5, 1997. |