(GaP)1-x(ZnS)x: A New Tunable Wide-Bandgap Material for Blue Light Emitting Diodes and Detectors of Ultraviolet Radiation

Information

• NSF Award
• 9261617

Owner

• AstroPower, Inc.

• Award Id

  9261617

• Award Effective Date

  1/1/1993 - 32 years ago

• Award Expiration Date

  9/30/1993 - 31 years ago

• Award Amount

  $ 50,000.00

• Award Instrument

  Standard Grant

AstroPower proposes the growth and development of a (GaP)1- x(ZnS)x-based material. It is the purpose of the proposed work to explore for solid solution compositions of (GaP)1-x(ZnS)x that are amphoteric and characterized by direct bandgaps greater than 2.6 eV, and to demonstrate epitaxial growth techniques which have manufacturing scale potential. This type of material with bandgap in excess of 2.6 eV can be employed in blue light-emitting diodes, and in UV detectors capable of superior performance compared to silicon, in high temperature, high radiation environments such as in earth orbit and particle accelerators. For a blue LED, the suc- cessful development of this material system is expected to lead to luminous intensities of 80 to 300 mcd compared to the 20 mcd of currently available SiC LEDs.

• Program Officer

  Darryl G. Gorman

• Min Amd Letter Date

  2/11/1993 - 31 years ago

• Max Amd Letter Date

  2/11/1993 - 31 years ago

• ARRA Amount

• Name

  AstroPower, Incorporated

• City

  Newark

• State

  DE

• Country

  United States

• Address

  Solar Park

• Postal Code

  197162000

• Phone Number

  3023660400

• First Name

  Margaret

• Last Name

  Hannon

• Start Date

  1/1/1993 12:00:00 AM