Claims
- 1. In a gas discharge display/memory device characterized by an ionizable gas medium in a gas chamber formed by a pair of opposed dielectric material charge storage members having surfaces in contact with the gas medium and at least one electrode insulated from the gas medium by a dielectric member,
- the improvement wherein each dielectric gas contacting surface is at least partially coated with a layer of at least one inorganic lead compound selected from the group consisting of lead selenide, lead sulfide, and lead telluride, said lead compound layer having a thickness of at least about 100 angstrom units.
- 2. The invention of claim 1 wherein the layer thickness ranges from about 200 angstrom units up to about 10,000 angstrom units.
- 3. In a process for manufacturing a gas discharge display/memory device comprising an ionizable gas medium in a gas chamber formed by a pair of opposed dielectric material charge storage members having surfaces in contact with the gas medium backed by electrode members which are insulated from the gas medium by said dielectric members, the electrode members behind each dielectric material surface being oriented with respect to the electrode members behind the opposing dielectric material surface so as to define a plurality of discharge units,
- the improvement wherein a layer of at least one inorganic lead compound is applied to each opposed dielectric material gas contact surface, said lead compound being selected from the group consisting of lead selenide, lead sulfide, and lead telluride, said lead compound layer having a thickness of at least about 100 angstrom units.
- 4. The invention of claim 3 wherein the layer thickness ranges from about 200 angstrom units up to about 10,000 angstrom units.
- 5. As an article of manufacture, a dielectric material body having a structural configuration for use in a gaseous discharge display/memory device said dielectric body having at least one electrode on one side thereof and on the opposite side thereof containing a surface deposit of at least one inorganic lead compound, selected from the group consisting of lead selenide, lead sulfide, and lead telluride, said lead compound deposit having a thickness of at least about 100 angstrom units.
- 6. The invention of claim 5 wherein the deposit thickness ranges from about 200 angstrom units up to about 10,000 angstrom units.
RELATED APPLICATION
This application is a continuation-in-part of copending U.S. patent application Ser. No. 406,022, filed Oct. 12, 1973, now U.S. Pat. No. 3,943,394, which is a continuation-in-part of copending U.S. patent application Ser. No. 204,700, filed Dec. 3, 1971, now abandoned, which is a continuation-in-part of U.S. patent application Ser. No. 70,745, filed Sept. 8, 1970, now U.S. Pat. No. 3,634,719.
US Referenced Citations (4)
Continuation in Parts (3)
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Number |
Date |
Country |
Parent |
406022 |
Oct 1973 |
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Parent |
204700 |
Dec 1971 |
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Parent |
70745 |
Sep 1970 |
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