The present disclosure relates to a gas flow rate measurement device and a gas flow rate measurement method.
Gas flow rate measurement devices are known to be provided in, for example, an intake passage of a vehicle to measure the flow rate of gas passing through the passage.
In one aspect of the present disclosure, a gas flow rate measurement device includes a flow rate sensor that, according to a flow rate of a gas to be measured, outputs a voltage that includes variations due to differences in an external environment and variations due to individual differences, a correction coefficient storage unit that stores a correction coefficient for correcting the output voltage of the flow rate sensor based on a corresponding relationship between the output voltage of the flow rate sensor and the flow rate of the gas, which differs depending on the differences in the external environment and the individual differences of the flow rate sensor, and a correction calculation unit that corrects the output voltage of the flow rate sensor by using the correction coefficient, wherein the correction coefficient is a coefficient for directly converting the output voltage of the flow rate sensor into an ideal voltage value that does not include the variations due to the differences in the external environment and does not include the variations due to the individual differences in the flow rate sensor.
In another aspect of the present disclosure, a gas flow rate measurement method includes a step of acquiring a voltage from a flow rate sensor that depends on a flow rate of a gas to be measured, the voltage including variations due to temperature of the gas and variations due to individual differences, a step of acquiring the temperature of the gas from a temperature sensor, a step of, using a map that defines a correction coefficient for correcting the output voltage of the flow rate sensor based on a corresponding relationship between the output voltage of the flow rate sensor and the flow rate of the gas, which differs depending on the differences in the external environment and the individual differences of the flow rate sensor, calculating the correction coefficient using the temperature of the gas and the output voltage of the flow rate sensor as arguments, a step of correcting the output voltage of the flow rate sensor based on the correction coefficient, and a step of converting the corrected output voltage into SENT communication format, wherein the correction coefficient is a coefficient for directly converting the output voltage of the flow rate sensor into an ideal voltage value that does not include the variations due to the differences in the external environment and does not include the variations due to the individual differences in the flow rate sensor.
The above and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description made with reference to the accompanying drawings. In the drawings:
Hereinafter, a plurality of embodiments of the gas flow rate measurement device will be described with reference to the drawings. In the embodiments, components which are substantially similar to each other are denoted by the same reference numerals and redundant description thereof is omitted.
A gas flow rate measurement device according to the first embodiment is shown in
The flow rate sensor 20 may be, for example, a heat ray type sensor, and includes a detection unit 21 made of a silicon semiconductor. The detection unit 21 includes a silicon substrate on which a thin film portion is formed, a heater resistor installed in the center of the thin film portion, and a temperature sensor used to detect flow rates on an upstream side and a downstream side of the heater resistor along the air suction direction. The temperature of the heater resistor is set so as to be higher than the intake air temperature by a set degree of temperature. As a result, an upstream-downstream symmetrical temperature distribution centered on the heater resistor is generated in the thin film portion. When air flows in, a temperature difference occurs in the temperature distribution between the upstream side and the downstream side. Since the measured flow rate is a function of this temperature difference, the temperatures upstream and downstream of the thin film portion are detected by the flow rate detection temperature sensor, and the temperature difference between the two is calculated to measure the intake flow rate. In the case of backflow, the temperature distributions on the upstream side and the downstream side are reversed, and the sign of the calculated temperature difference is also reversed, so that the directionality of the intake flow rate can be determined. Here, flow rate G is a mass flow rate (g/s). The flow rate sensor 20 outputs a voltage V corresponding to the intake flow rate.
The temperature sensor 30 is installed separately from the above-mentioned flow rate detection temperature sensor, and measures the intake air temperature. The temperature sensor 30 outputs a voltage Vt corresponding to the intake air temperature. Although not shown, the temperature sensor 30 is connected to power supply voltage via a pull-up resistor.
The correction circuit 10 includes an amplification arithmetic unit (hereinafter, operational amplifier) 11, a buffer 12, an AD converter (hereinafter, ADC) 13, a correction unit 14, an output conversion unit 15, and a clock generation unit 16. The correction unit 14 includes a digital signal processor (hereinafter, DSP) 17 as a “digital signal processing circuit” and an adjustment ROM 18 which may be, for example, an EEPROM.
The operational amplifier 11 forms an amplifier circuit. An output terminal of the flow rate sensor 20 is connected to one input terminal of the operational amplifier 11 via a resistor 19b. Further, this input terminal is connected to the output terminal of the operational amplifier 11 via a resistor 19a which is a feedback resistor. The other input terminal of the operational amplifier 11 has a constant potential via the resistor 11a. With such a configuration, the operational amplifier 11 amplifies and outputs the voltage V output by the flow rate sensor 20. The voltage V amplified by the operational amplifier 11 is input to the ADC 13.
The buffer 12 is connected to the output terminal of the temperature sensor 30 and isolates the impedance on the circuit side. The voltage Vt at the output of the buffer 12 is input to the ADC 13.
The ADC 13 converts the inputted analog value into a digital value and outputs it. Here, the voltage V corresponding to the intake flow rate is converted into a digital voltage VD and output. Further, the voltage Vt corresponding to the intake air temperature is converted into a digital voltage VDt and output. The voltage VD and the voltage VDt are input to the correction unit 14.
The correction unit 14 corrects the voltage VD to a corrected voltage VDr and outputs the corrected voltage VDr. In particular, the DSP 17 makes corrections based on a map stored in the adjustment ROM 18. The details of the correction will be described later. The corrected voltage VDr is input into the output conversion unit 15.
The output conversion unit 15 may, for example, convert the corrected voltage
VDr into a SENT communication format, and outputs it. Specifically, a pulse wave VDout in the SENT communication format corresponding to the corrected voltage VDr is output. The output conversion unit 15 is a “SENT communication conversion unit”. The pulse wave VDout is input into the ECU 40. SENT is an abbreviation for Single Edge Nibble Transmission, which is a communication protocol in which the length of time between the falling edges of two pulses represents 4 bits, and those bits are transmitted as a group of data. In alternative embodiments, the corrected voltage VDr may be converted into a format other than the SENT communication format. For example, a pulse wave having a frequency f and may be output instead.
The clock generation unit 16 generates an operation clock for operating the entire correction circuit 10 including the DSP 17. This operation clock is input into each component such that the entire correction circuit 10 operates in synchronization. However, but the input path of the operation clock is not shown in the figures in order to reduce complexity.
The ECU 40 is a “voltage to flow rate conversion unit” that converts the corrected voltage VDr into an intake flow rate. The correction by the correction unit 14 is performed before the voltage is converted into the intake flow rate by the ECU 40. In other words, the correction unit 14 corrects the output voltage at a stage prior to being converted into the flow rate.
Next, the correction process in the gas flow rate measurement device 1 will be described with reference to
The correction calculation unit 51 of the DSP 17 uses the voltage VD from the ADC 13 and the voltage VDt from the temperature sensor 30 to correct the voltage VD to a voltage serving as a reference characteristic with a correction coefficient
Mi. The voltage serving as the reference characteristic is an ideal voltage value (hereinafter referred to as an ideal voltage) that does not include variations due to differences in external environment and does not include variations due to individual differences in the flow rate sensor 20. Further, the correction calculation unit 51 corrects the voltage VD based on the corresponding relationship between the voltage VD and the intake flow rate G. This corresponding relationship differs depending on different intake air temperatures and individual differences in the flow rate sensor 20. As shown in
The correction coefficient storage unit 52 of the adjustment ROM 18 stores the correction coefficient Mi for correcting the voltage VD based on the corresponding relationship between the voltage VD and the intake flow rate G, which differs depending on different intake air temperatures and individual differences in the flow rate sensor 20. In the first embodiment, the correction coefficient Mi is a coefficient for directly correcting the voltage VD to the ideal voltage. Specifically, the correction coefficient storage unit 52 stores a map as shown in
The correction coefficient Mi defined in the map of
More specifically, the correction coefficient Mi is calculated from the ratio Ki=VDb/VDa between the voltage VDa of the reference temperature Ta and the voltage VDb of the intake temperature Tb, and from the ratio Li=VDa/VDc between the voltage VDa of the reference temperature Ta and the ideal voltage VDc, using the formula [Mi=Ki×Li (=VDb/VDc)]. The ratio Ki corresponds to a temperature characteristic correction coefficient for correcting the voltage VDb of the intake air temperature Tb to the voltage when the intake air temperature is the reference temperature Ta. Further, the ratio Li corresponds to an individual difference correction coefficient for correcting the voltage VDa of the reference temperature Ta to the ideal voltage VDc.
Here, in order to correct the voltage VD to the ideal voltage VDc, it is conceivable to go through the following steps (1) and (2).
Hereinafter, an embodiment in which the voltage VD is corrected to the ideal voltage VDc through the procedures (1) and (2) above will be referred to as a comparative embodiment. In the comparative embodiment described above, the variations in the output voltage due to individual differences are corrected using a first map, and a second map defines the correction coefficient for correcting the output voltage to the voltage at the reference temperature. However, the above comparative embodiment method has room for improvement because it requires a relatively high storage capacity of the storage unit that stores the maps and also increases the complexity of the correction process. In contrast to this comparative embodiment, in the first embodiment, the voltage VDb is directly corrected to the ideal voltage VDc, i.e., in one step.
Returning to
Then, the correction calculation unit 51 of the DSP 17 uses the correction coefficient Mi to calculate the pre-correction voltage VD using the following equation.
[VDr (corrected voltage, ideal voltage)=VD (pre-correction voltage)/Mi]
The pre-correction voltage VD is corrected as shown above and the corrected voltage VDr, which is the ideal voltage, is output. As described above, the corrected voltage VDr is converted into the SENT communication format or a pulse wave with frequency f by the output conversion unit 15, and output to the ECU 40.
The gas flow rate measuring method by the gas flow rate measurement device 1 described above includes the following steps (A) to (E).
In the first embodiment, the gas flow rate measurement device 1 includes the flow rate sensor 20 that outputs a voltage V according to the flow rate of the air to be measured, the correction coefficient storage unit 52 that stores the correction coefficient Mi for correcting the output voltage V of the flow rate sensor 20, and the correction calculation unit 51 that corrects the voltage VD with respect to the voltage V by using the correction coefficient Mi. The correction coefficient Mi is a coefficient for correcting the voltage VD based on the corresponding relationship between the voltage VD and the intake flow rate G. This corresponding relationship differs depending on the external environment and individual differences in the flow rate sensor 20. Further, the correction coefficient Mi is a coefficient for directly converting the voltage VD into an ideal voltage value that does not include variations due to differences in external environment and does not include variations due to individual differences in the flow rate sensor 20.
As a result, unlike the above-mentioned comparative embodiment in which the correction for variations due to differences in external environment and the correction for variations due to individual difference are performed separately, a single step correction can be performed. As a result, the storage capacity of the adjustment ROM 18 can be reduced, while also correcting the output voltage V of the flow rate sensor 20 with high accuracy. In addition, calculation speed may be improved.
Further, in the first embodiment, the external environment is the intake air temperature. Due to this, the voltage VD can be directly (i.e., in one step) corrected into an ideal voltage value that does not include variations due to differences in the intake air temperature and does not include variations due to individual differences in the flow rate sensor 20.
Further, in the first embodiment, the gas flow rate measurement device 1 includes a temperature sensor 30 for measuring the intake air temperature. The correction coefficient storage unit 52 stores a map for calculating the correction coefficient Mi with the voltage VD corresponding to the intake air temperature and the output voltage V of the flow sensor 20 as arguments. As a result, the correction coefficient can be calculated with one map that uses the intake air temperature and the voltage as axes. Therefore, it is possible to reduce the storage capacity of the adjustment ROM 18 while improving calculation speed.
Further, in the first embodiment, in the map, the correction coefficient Mi is defined so as to correspond to a discrete subset of the intake air temperature T and a discrete subset of the voltage VD. The correction calculation unit 51 performs an interpolation calculation based on the map to calculate the correction coefficient Mi. As a result, only the correction coefficients Mi of the limited map points needs to be stored in advance in the adjustment ROM 18, which is effective in reducing storage capacity.
Further, in the first embodiment, the correction coefficient Mi defined in the map satisfies the formula [Mi=VDb/VDc]. Here, VDb is the output voltage of the temperature Tb at a particular flow rate value, and VDc is the ideal voltage. In other words, the correction coefficient Mi is a ratio between output voltage VDb of the temperature Tb and the ideal voltage VDc. As a result, variations due to both intake air temperature and individual differences of the flow rate sensor 20 can be corrected in one step using one correction coefficient Mi.
Further, in the first embodiment, the correction coefficient Mi defined in the map is calculated from the ratio Ki=VDb/VDa between the output voltage VDa of the reference temperature Ta and the output voltage VDb of the temperature Tb, and from the ratio Li=VDa/VDc between the output voltage VDa of the reference temperature Ta and the ideal voltage VDc, using the formula [Mi=Ki×Li (=VDb/VDc)]. In this way, the correction coefficient Mi can be calculated by a relatively simple calculation.
Further, in the first embodiment, the output conversion unit 15 converts the corrected voltage VDr into a SENT communication format or a pulse wave having a frequency f. By outputting the corrected voltage VDr in the SENT communication format or the pulse wave VDout having the frequency f, it is possible to adapt to various sensor signal input specifications on the ECU 40 side.
Further, in the first embodiment, a digital signal processing circuit is used as the correction calculation unit 51. As a result, high-precision calculations can be performed while reducing circuit size.
Further, in the first embodiment, the gas flow rate measurement device 1 includes an ECU 40 as a voltage to flow rate conversion unit that converts the corrected voltage VDr into an intake flow rate. The intake flow rate converted by the ECU 40 can be used for engine control.
Further, in the first embodiment, the gas flow rate measuring method by the gas flow rate measurement device 1 includes the steps (A) to (E) described above. The correction coefficient Mi is a coefficient for directly converting the voltage VD into an ideal voltage value that does not include variations due to differences in external environment and does not include variations due to individual differences in the flow rate sensor 20. As a result, it is possible to correct the output voltage V of the flow rate sensor 20 with high accuracy while reducing the storage capacity of the adjustment ROM 18. In addition, calculation speed may be improved.
In the second embodiment, as shown in
The pulsation determination unit 63 of the DSP 17 determines the presence or absence of pulsation of the intake flow rate and the pulsation state based on the voltage VD. The map selection unit 64 of the DSP 17 selects a map according to the presence or absence of pulsation of the intake flow rate and the pulsation state. As a result, the voltage VD can be corrected by using the correction coefficient Mi according to the presence or absence of pulsation of the intake flow rate and the pulsation state, and the output voltage V of the flow rate sensor 20 can be corrected with high accuracy. Further, the second embodiment has the same configuration as the first embodiment except for the above, and has the same effects as the first embodiment.
In the third embodiment, as shown in
The correction coefficient adjusting unit 76 of the DSP 17 adjusts the correction coefficient Mi using the adjustment coefficients r when the pulsation determination unit 63 determines that there is a pulsation of the intake flow rate. In the third embodiment, the correction coefficient Mi is multiplied by the adjustment coefficient r.
One of the factors that cause the correction coefficient Mi to differ depending on the pulsating state is variations in the passage width W described above. By measuring the passage width W and multiplying the correction coefficient r according to the passage width W by the correction coefficient Mi, the correction coefficient Mi at the time of pulsation can be adjusted by a relatively simple method. Further, in the second embodiment, the characteristics are measured in advance for each pulsation condition to determine the correction coefficients Mi of the map, but in the third embodiment, the efforts involved in the pre-measurement can be reduced. Further, the third embodiment has the same configuration as the first embodiment except for the above, and has the same effects as the first embodiment.
In another embodiment, the voltage to flow rate conversion unit may be provided in the correction unit instead of the ECU.
The control circuit and method described in the present disclosure may be implemented by a special purpose computer which is configured with a memory and a processor programmed to execute one or more particular functions embodied in computer programs of the memory. Alternatively, the control circuit described in the present disclosure and the method thereof may be realized by a dedicated computer configured as a processor with one or more dedicated hardware logic circuits. Alternatively, the control circuit and method described in the present disclosure may be realized by one or more dedicated computer, which is configured as a combination of a processor and a memory, which are programmed to perform one or more functions, and a processor which is configured with one or more hardware logic circuits. The computer programs may be stored, as instructions to be executed by a computer, in a tangible non-transitory computer-readable medium.
The present disclosure has been described based on the embodiments. However, the present disclosure is not limited to the embodiments and structures. This disclosure also encompasses various modifications and variations within the scope of equivalents. Furthermore, various combination and formation, and other combination and formation including one, more than one or less than one element may be made in the present disclosure.
Number | Date | Country | Kind |
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2018-096137 | May 2018 | JP | national |
The present application is a continuation application of International Patent Application No. PCT/JP2019/019340 filed on May 15, 2019, which designated the U.S. and claims the benefit of priority from Japanese Patent Application No. 2018-96137 filed on May 18, 2018. The entire disclosures of all of the above applications are incorporated herein by reference
Number | Date | Country | |
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Parent | PCT/JP2019/019340 | May 2019 | US |
Child | 17091213 | US |