This disclosure claims the priority to and the benefit of Chinese Patent Disclosure No. 202310516335.8 filed on May 8, 2023, the disclosure of which is incorporated herein by reference in its entirety.
The disclosure relates to the field of display, in particular, to gate driving circuits and display panels including the same.
Gate driver on array (GOA) is the driving technology that integrates a gate driving circuit on an array substrate of a display panel to achieve the row by row scan. The above-mentioned driving technology can omit a gate integrated circuit (IC) chip, which has the advantages of reducing production costs and realizing a narrow frame design of the display panel, and has been applied to a variety of displays.
Generally, in an internal compensation circuit of a pixel in the display panel, in order to achieve the purpose of compensation and adjustment of the brightness of the display panel, it is necessary for the gate driving circuit to output a pulse signal with an adjustable width. Moreover, the internal compensation circuit generally requires multiple groups of scan signals output by multiple gate driving circuits, which is not conducive to the narrow frame design of the display panel. In order to simplify the design of the gate driving circuit of a pixel circuit that requires multiple groups of the scan signals, a control signal of a wide pulse gate driving circuit is provided by a scan signal output by other gate driving circuits in the display panel. However, if other gate driving circuits fail, the wide pulse gate driving circuit also fails, and the pulse signal with a preset width cannot be output, which result in low yield.
Embodiments of the disclosure provide a gate driving circuit, which includes a plurality of stages of gate driving units and at least one repair line. A nth stage gate driving unit in the plurality of stages of gate driving units is connected to at least a first control signal line configured to receive a nth stage scan signal. The nth stage gate driving unit is configured to output a nth stage pulse signal under the control of the nth stage scan signal. The repair line intersects with the first control signal line, and the repair line and the first control signal line are disposed in different layers. The repair line is configured to transmit a mth stage scan signal, both of n and m are positive integers greater than 0, and n is greater than or less than m.
Embodiments of the disclosure further provide a display panel including a display area and a non-display area adjacent to the display area. The display panel includes a gate driving circuit disposed in the non-display area, and the gate driving circuit includes a plurality of stages of gate driving units and at least one repair line. A nth stage gate driving unit in the plurality of stages of gate driving units is connected to at least a first control signal line configured to receive a nth stage scan signal. The nth stage gate driving unit is configured to output a nth stage pulse signal under a control of the nth stage scan signal. The repair line intersects with the first control signal line, and the repair line and the first control signal line are disposed in different layers. The repair line is configured to transmit a mth stage scan signal, both of n and m are positive integers greater than 0, and n is greater than or less than m.
In combination with drawings in embodiments of the disclosure, technical solutions in the embodiments of the disclosure will be described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the disclosure, not all of them. Based on the embodiments of the disclosure, all other embodiments obtained by those skilled in the art without creative effort belong to a scope of the disclosure. In addition, it should be understood that specific embodiments described herein are only used to explain and interpret the disclosure and are not used to limit the disclosure.
Moreover, terms “first”, “second”, or the like, in the description of the specification and the claims of the disclosure are used to distinguish different objects, not to describe a particular order. Terms “include”, “have”, “with”, and any variation thereof, are intended to override non-exclusive inclusions.
Embodiments of the disclosure provide a gate driving circuit and a display panel, which will be described in detail below. It should be noted that the description order of the following embodiments is not used as limitations on a preferred order of the embodiments of the disclosure.
Referring to
In the embodiments of the disclosure, the gate driving circuit 100 including the multiple stages of gate driving units itself does not perform stage transmission, but is controlled by multiple groups of scan signals output by another group of GOA circuits to achieve the row by row opening of the gate driving circuit 100, thereby realizing the output of multiple groups of pulse signals. The above-mentioned another group of GOA circuits refer to other GOA circuits included in a display panel including the gate driving circuit 100 than the gate driving circuit 100, and are configured to provide multiple groups of scan signals required for an internal compensation circuit.
It should be noted that, for ease of description, in the following embodiments of the disclosure, when m is greater than n, the mth stage scan signal G1 (m) is represented by the (n+k)th stage scan signal G1 (n+k). When m is less than n, the mth stage scan signal G1 (m) is represented by the (n−k)th stage scan signal G1 (n−k). k is an integer greater than or equal to 1.
The nth stage scan signal G1(n), the (n+k)th stage scan signal G1 (n+k), and the (n−k)th stage scan signal G1 (n−k) can be scan signals output by the same GOA circuit. The repair line 12 can be connected to an output end of the GOA circuit to receive the (n+k)th stage scan signal G1 (n+k) and the (n−k)th stage scan signal G1 (n−k).
The k in the (n+k)th stage scan signal G1 (n+k) and the (n−k)th stage scan signal G1 (n−k) can be adjusted according to the driving requirements of the pixel circuit in the display panel. For example, when n is 3, k may be 1, 2, or the like; when n is 5, k may be 1, 2, 3, or the like.
It can be understood that when the gate driving circuit 100 is applied to the pixel circuit, the pixel circuit can accept a phase change of the nth pulse signal G3(n) within a certain range. Therefore, the value of k can be set according to simulation results of the pixel circuit. For example, when the nth stage scan signal G1(n) fails, the (n−k)th stage scan signal G1 (n−k) is used to repair the failed nth stage scan signal G1(n), then the phase of the nth pulse signal G3(n) is shifted forward by k stages, and a driving signal of the pixel circuit undergoes variation. The acceptable variation range of the pixel circuit needs to be determined based on the compensation effect and the display effect of the pixel circuit.
In the embodiments of the disclosure, with the design of the repair line 12, when the nth stage scan signal G1(n) fails, the repair line 12 can be connected to the first control signal line 11 by laser or other repair methods. Because the repair line 12 can provide the (n−k)th stage scan signal G1 (n−k) or the (n+k)th stage scan signal G1 (n+k), such as a (n−1)th stage scan signal G1 (n−1), a (n+1)th stage scan signal G1 (n+1), or the like, the nth stage pulse signal G3(n) can be output normally, thereby enhancing the independence of the gate driving circuit 100, and improving the yield of the gate driving circuit 100.
In some embodiments of the disclosure, the gate driving circuit 100 further includes a signal transmission line 13. The signal transmission line 13 is configured to transmit the nth stage scan signal G1(n). The signal transmission line 13 intersects with the first control signal line 11, and is disposed in different layers from the first control signal line 11. The signal transmission line 13 is connected to the first control signal line 11 through a via hole 130.
In some embodiments, the signal transmission line 13 may be disposed in the same layer as the repair line 12 to simplify the structure of film layers.
In some embodiments, the signal transmission line 13 may be disposed in the same layer as the first control signal line 11 to avoid poor signal transmission caused by the connection way through the via hole 130.
In some embodiments, when the nth stage scan signal G1(n) fails, and the repair line 12 is connected to the first control signal line 11, the connection between the signal transmission line 13 and the first control signal line 11 can be disconnected. Thus, it can be avoided that the failed nth stage scan signal G1(n) affects the normal operation of the nth stage gate driving unit 10.
In the embodiments of the disclosure, only one repair line 12 may be provided corresponding to the nth stage gate driving unit 10. Thus, when the nth stage scan signal G1(n) fails, the repair line 12 can be connected to the first control signal line 11 by laser or other repair methods. Because the repair line 12 can provide the (n−k)th stage scan signal G1 (n−k) or the (n+k)th stage scan signal G1 (n+k), the nth stage pulse signal G3(n) can be output normally. Moreover, the number of lines can be reduced to facilitate the implementation of a narrow frame.
In the embodiments of the disclosure, multiple repair lines 12 may be provided corresponding to the nth stage gate driving unit 10. It should be noted that when the nth stage scan signal G1(n) fails, only one of the repair lines 12 is selected to be connected to the first control signal line 11 by laser or other repair methods. The design of the multiple repair lines 12 can improve the repair yield.
As shown in
For example, the repair line 12 may include k first repair lines 121 and k second repair lines 122. A first one of the first repair lines 121 is configured to receive a (n−1)th stage scan signal G1 (n−1). A second one of the first repair lines 121 is configured to receive a (n−2)th stage scan signal G1 (n−2). A kth one of the first repair lines 121 is configured to receive the (n−k)th stage scan signal G1 (n−k). A first one of the second repair lines 122 is configured to receive a (n+1)th stage scan signal G1 (n+1). A second one of the second repair lines 122 is configured to receive a (n+2)th stage scan signal G1 (n+2). The kth one of the second repair lines 122 is configured to receive the (n+k)th stage scan signal G1 (n+k). Analogously, here will not repeat them one by one. That is, both of the number of the first repair lines 121 or the number of the second repair lines 122 are k.
In some embodiments, the number of the first repair lines 121 or the number of the second repair lines 122 may not be k. That is, corresponding one of the first repair lines 121 may be configured to receive the appropriate (n−k)th stage scan signal G1 (n−k), and corresponding one of the second repair lines 122 may be configured to receive the appropriate (n+k)th stage scan signal G1 (n+k). The disclosure does not specifically limit on this.
By designing at least one first repair line 121 and at least one second repair line 122, both of the (n−k)th stage scan signal G1 (n−k) and the (n+k)th stage scan signal G1 (n+k) can serve as repair signals in the embodiments of the disclosure. Thus, in practice, an appropriate signal can be selected to repair the nth stage scan signal G1(n) based on the requirements of the pixel circuit, further improving the yield of the nth stage gate driving unit 10.
In some embodiments of the disclosure, the first repair line 121 and the second repair line 122 are disposed on two opposite sides of the first control signal line 11 respectively. On the one hand, the space around the nth stage gate driving unit 10 can be fully utilized for wiring. On the other hand, the positions of the first repair line 121 and the second repair line 122 can be clearly distinguished, so that the (n−k)th stage scan signal G1 (n−k) or the (n+k)th stage scan signal G1 (n+k) can be selected as the repair signal according to actual requirements.
In some embodiments of the disclosure, a repair mark 120 is provided on the repair line 12. An intersection point A of the repair line 12 and the first control signal line 11 corresponds to the repair mark 120. Specifically, the intersection point A is set at least partially overlapping with the repair mark 120.
It is understood that the repair line 12 can be connected to the first control signal line 11 by a laser method. Because the energy of the laser is high, in order to avoid damage to other layers, the present disclosure is provided with the repair mark 120 on the repair line 12 and the intersection point A of the first control signal line 11 and the repair line 12 corresponding to the repair mark 120, which can improve the accuracy of the laser. While improving the yield of the connection between the repair line 12 and the first control signal line 11, the laser damage to other layers is avoided.
Further, the repair mark 120 may be a protrusion or groove disposed on the repair line 12. The repair mark 120 may be a graphical marker such as “−”, “+”, “×”, or the like disposed on the repair line 12. This disclosure does not specifically limit on this.
Referring to
It can be understood that k determines the phase relationship between the nth stage scan signal G1(n) and the nth stage pulse signal G3(n). The phase of the nth stage scan signal G1(n) and the phase of the nth stage pulse signal G3(n) are the same. When the nth stage scan signal G (n) fails, the (n+k)th stage scan signal G1 (n+k) can repair the failed nth stage scan signal G (n), then the phase of the nth stage pulse signal G3(n) is shifted backward by k stages. The embodiments of the disclosure can reduce the number of the repair lines 12, making the phase of the repaired nth stage pulse signal G3(n) shift backward by k stages, which can improve the consistency of the repair.
Further, the k repair lines 12 may be disposed on the same side of the first control signal line 11, or on two sides of the first control signal line 11. Specific design of the k repair lines 12 can be made based on the wiring space of the gate driving circuit 100.
Referring to
Similarly, k determines the phase relationship between the nth stage scan signal G (n) and the nth stage pulse signal G3(n). The phase of the nth stage scan signal G (n) and the phase of the nth stage pulse signal G3(n) are the same. When the nth stage scan signal G (n) fails, the (n−k)th stage scan signal G1 (n−k) can repair the failed nth stage scan signal G (n), then the phase of the nth stage pulse signal G3(n) is shifted forward by k stages. The embodiments of the disclosure can reduce the number of the repair lines 12, making the phase of the repaired nth stage pulse signal G3(n) shift forward by k stages, which can improve the consistency of the repair.
It should be noted that in the nth stage gate driving unit 10, multiple stages of scan signals output by other GOA circuits may be required. Therefore, each group of the scan signals can be applied to the solutions described in the above-mentioned embodiments. That is, the nth stage gate driving unit 10 is not limited to be connected to the first control signal line 11, and/or the first control signal line 11 is not limited to receive the nth stage scan signal G (n).
Specifically, the following embodiments of the disclosure are illustrated by an example of a specific gate driving circuit 100, but cannot be understood as a limitation on the disclosure.
Referring to
The pull-up control module 101 is connected to a high-potential wiring 14, a first low-potential wiring 15, the first control signal line 11, a second control signal line 16, and a pull-up node Q. The pull-up control module 101 is configured to control a potential of the pull-up node Q.
The high-potential wiring 14 is configured to transmit a high-potential signal VGH. The first low-potential wiring 15 is configured to transmit a first low-potential signal VGL1. The second control signal line 16 is configured to transmit a second scan signal G2(n). The pull-up control module 101 is configured to pull up or pull down the potential of the pull-up node Q under a control of the nth stage scan signal G1(n), the high-potential signal VGH, the first low-potential signal VGL1, and the second scan signal G2(n).
The pull-up output module 102 is connected to the high-potential wiring 14, the pull-up node Q, and a signal output end P. The pull-up output module 102 is configured to output the nth stage pulse signal G3(n) at the signal output end P under the control of the potential of the pull-up node Q.
The pull-down control module 103 is connected to the high-potential wiring 14, the second control signal line 16, a stage transmission wiring 17, the pull-up node Q, the first low-potential wiring 15, and a pull-down node QB. The pull-down control module 103 is configured to control a potential of the pull-down node QB.
The stage transmission wiring 17 is configured to transmit a stage transmission signal Cout. The pull-down control module 103 is configured to pull up or pull down the potential of the pull-down node QB under the control of the high-potential signal VGH, the stage transmission signal Cout, and the second scan signal G2(n).
The pull-down module 104 is connected to a second low-potential wiring 18, the signal output end P, and the pull-down node QB. The pull-down module 104 is configured to pull down a potential of the signal output end P under the control of the potential of the pull-down node QB.
The second low-potential wiring 18 is configured to transmit a second low-potential signal VGL2. In the embodiments of the disclosure, a potential of the first low-potential signal VGL1 and a potential of the second low-potential signal VGL2 may be the same or different.
In the embodiments of the disclosure, the stage transmission signal Cout and the second scan signal G2(n) may come from other GOA circuits. Other signals in the gate driving circuit 100, other than the stage transmission signal Cout and the second scan signal G2(n), such as the high-potential signal VGH, the first low-potential signal VGL1, and the like, can be shared with other GOA circuits to reduce the wiring space, and realize the narrow frame.
The gate driving circuit 100 provided in the embodiments of the disclosure can control the output pulse width of the nth stage pulse signal G3(n) by controlling the phase difference between the nth stage scan signal G1(n) and the second scan signal G2(n), so as to meet the requirements in practice.
Specifically, in some embodiments of the disclosure, the pull-up control module 101 includes a first transistor T1, a second transistor T2, a third transistor T3, and a fourth transistor T4.
Both of a gate of the first transistor T1 and a gate of the second transistor T2 are connected to the first control signal line 11. A source of the first transistor T1 is connected to the high-potential wiring 14. A drain of the first transistor T1 is connected to a source of the second transistor T2. A drain of the second transistor T2 is connected to the pull-up node Q. Both of a gate of the third transistor T3 and a gate of the fourth transistor T4 are connected to the second control signal line 16. A source of the third transistor T3 is connected to the first low-potential wiring 15. A drain of the third transistor T3 and a source of the fourth transistor T4 are connected to a first node N1. A drain of the fourth transistor T4 is connected to the pull-up node Q.
It should be noted that the transistors used in all embodiments of the disclosure may be thin-film transistors, field-effect transistors, or other devices with the same characteristics. Because the source and the drain in each of the transistors are symmetrical, the source and the drain are interchangeable. In the embodiments of the disclosure, one of two poles other than the gate in each of the transistors is named the source, and the other of the two poles is named the drain, so as to distinguish from the gate. According to the pattern in the accompanying figures, a middle end of each of the transistors is the gate, a signal input end of each of the transistors is the source, and a signal output end of each of the transistors is the drain.
Further, the transistors used in embodiments of the disclosure may include P-type transistors and/or N-type transistors, in which the P-type transistor is configured to be turned on when the gate is in a low-level state, and turned off when the gate is in a high-level state, and in which the N-type transistor is configured to be turned on when the gate is in a high-level state, and turned off when the gate is in a low-level state. The transistors in the following embodiments of the disclosure are illustrated by an example of the N-type transistor, but cannot be understood as a limitation on the disclosure.
Further, in some embodiments of the disclosure, the pull-up control module 101 further includes a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, and a first capacitor.
A gate of the fifth transistor T5, a drain of the sixth transistor T6, and one end of the first capacitor C1 are all connected to the pull-up node Q. A source of the fifth transistor T5 is connected to the high-potential wiring 14. A drain of the fifth transistor T5, a source of the sixth transistor T6, and a drain of the seventh transistor T7 are all connected to the first node N1. Both of a gate of the sixth transistor T6 and a gate of the seventh transistor T7 are connected to the pull-down node QB. A source of the seventh transistor T7 is connected to the first low-potential wiring 15. The other end of the first capacitor C1 is connected to the signal output end P.
It can be understood that the combination of the fifth transistor T5, the sixth transistor T6, the seventh transistor T7, and the first capacitor C1 can be used as an anti-leakage unit to prevent leakage of charge at the pull-up node Q. Specifically, when the potential of the pull-up node Q is pulled up, the fifth transistor T5 is turned on, and the high-potential signal VGH is transmitted to the first node N1, then the potential of the first node N1 is pulled up. At this time, the potential of the first node N1 is greater than or equal to the potential of the pull-up node Q. Thus, the leakage path of charge at the pull-up node Q through the fourth transistor T4 can be reduced or eliminated, making the high-potential state of the pull-up node Q sustain longer.
It can be understood that, in some embodiments, the sixth transistor T6 and the seventh transistor T7 in the pull-up control module 101 may be omitted.
In some embodiments of the disclosure, the pull-down control module 103 further includes an eighth transistor T8, a ninth transistor T9, and a second capacitor C2.
A gate of the eighth transistor T8 is connected to the stage transmission wiring 17. A source of the eighth transistor T8 is connected to the second control signal line 16. A drain of the eighth transistor T8, one end of the second capacitor C2, and a gate of the ninth transistor T9 are connected together. The other end of the second capacitor C2 and a source of the ninth transistor T9 are connected to the high-potential wiring 14. A drain of the ninth transistor T9 is connected to the pull-down node QB.
Further, in some embodiments of the disclosure, the pull-down control module 103 further includes a tenth transistor T10, an eleventh transistor T11, a twelfth transistor T12, a thirteenth transistor T13, and a fourteenth transistor T14.
Both of a gate of the tenth transistor T10 and a gate of the eleventh transistor T11 are connected to the pull-up node Q. A drain of the tenth transistor T10, a drain of the twelfth transistor T12, and a gate of the fourteenth transistor T14 are all connected to the pull-down node QB. A source of the tenth transistor T10, a drain of the eleventh transistor T11, a source of the twelfth transistor T12, a drain of the thirteenth transistor T13, and a drain of the fourteenth transistor T14 are all connected to a second node N2. Both of a source of the eleventh transistor T11 and a source of the thirteenth transistor T13 are connected to the first low-potential wiring 15. Both of a gate of the twelfth transistor T12 and a gate of the thirteenth transistor T13 are connected to the first control signal line 11. A source of the fourteenth transistor T14 is connected to the high-potential wiring 14.
The tenth transistor T10 and the eleventh transistor T11 can maintain the low-potential of the pull-down node QB. When the potential of the pull-up node Q is pulled up to a high-potential, the tenth transistor T10 and the eleventh transistor T11 are turned on, and the first low-potential signal VGL1 is transmitted to the pull-down node QB to maintain the low-potential of the pull-down node QB. Similarly, the twelfth transistor T12 and the thirteenth transistor T13 can also maintain the low-potential of the pull-down node QB. When the nth stage scan signal G1(n) is a high-potential signal, the twelfth transistor T12 and the thirteenth transistor T13 are turned on, and the first low-potential signal VGL1 is transmitted to the pull-down node QB to maintain the low-potential of the pull-down node QB.
Moreover, when the potential of the pull-down node QB is pulled up, the fourteenth transistor T14 is turned on, and the high-potential signal VGH is transmitted to the second node N2, then the potential of the second node N2 is pulled up. At this time, the potential of the second node N2 is greater than or equal to the potential of the pull-down node QB. Thus, the leakage path of charge at the pull-down node QB through the eleventh transistor T11 or the thirteenth transistor T13 can be reduced or eliminated, making the high-potential state of the pull-down node QB sustain longer.
It can be understood that, in some embodiments, the tenth transistor T10 and the eleventh transistor T11 in the pull-down control module 103 may be omitted, or the twelfth transistor T12 and the thirteenth transistor T13 in pull-down control module 103 may be omitted.
In some embodiments of the disclosure, the pull-up output module 102 may include a fifteenth transistor T15. A gate of the fifteenth transistor T15 is connected to the pull-up node Q. A source of the fifteenth transistor T15 is connected to the high-potential wiring 14. A drain of the fifteenth transistor T15 is connected to the signal output end P.
In some embodiments of the disclosure, the pull-down module 104 may include a sixteenth transistor T16. A gate of the sixteenth transistor T16 is connected to the pull-down node QB. A source of the sixteenth transistor T16 is connected to the second low-potential wiring 18. A drain of the sixteenth transistor T16 is connected to the signal output end P.
Referring to
At the pulse output stage t1: when the nth stage scan signal G1(n) is in a high-level state, the first transistor T1 and the second transistor T2 are turned on, and the pull-up node Q is charged to be in the high-level state. The fifteenth transistor T15, the fifth transistor T5, the tenth transistor T10, the eleventh transistor T11, the twelfth transistor T12, and the thirteenth transistor T13 are all turned on. At the same time, the stage transmission signal Cout is in the high-level state, and the second scan signal G2(n) is in a low-level state. Both of the third transistor T3 and the fourth transistor T4 are turned off. The gate of the ninth transistor T9 is discharged by the conductive eighth transistor T8 to be in the low-level state, and the pull-down node QB is fully discharged by the tenth transistor T10, the eleventh transistor T11, the twelfth transistor T12, and the thirteenth transistor T13 to be in the low-level state. The sixteenth transistor T16 is turned off, and the nth stage pulse signal G3(n) starts to output a high-level.
At the reset phase stage t2: when the second scan signal G2(n) is in a high-level state, the third transistor T3 and the fourth transistor T4 are turned on, and the pull-up node Q is discharged to be in a low-level state, making the fifteenth transistor T15, the tenth transistor T10, the eleventh transistor T11, the twelfth transistor T12, and the thirteenth transistor T13 being turn off. At the same time, since the stage transmission signal Cout is switched to be in the high-level state, the eighth transistor T8 is turned on, and the gate of the ninth transistor T9 is charged by the eighth transistor T8 in an open state to be in the high-level state, and the pull-down node QB is charged by the ninth transistor T9 to be in the high-level state. The sixteenth transistor T16 is turned on, and the nth stage pulse signal G3(n) starts to output a low-level.
It can be seen from the above-mentioned timing sequence that when the nth stage scan signal G1(n) is in the high-level state and the second scan signal G2(n) is in the low-level state, the potential of the pull-up node Q is pulled up, then the nth stage pulse signal G3(n) with high-level is output through the fifteenth transistor T15. When the nth stage scan signal G1(n) is in the low-level state and the second scan signal G2(n) is in the high-level state, the potential of the pull-down node QB is pulled up, and the nth stage pulse signal G3(n) is pulled down through the sixteenth transistor T16 to be in the low-level state. Therefore, the pulse width of the nth stage pulse signal G3(n) can be adjusted by controlling the phase difference between the nth stage scan signal G1(n) and the second scan signal G2(n). For example, as shown in
Accordingly, referring to
The display panel 1000 further includes other GOA circuits (not shown in the figures) to provide multiple groups of scan signals required by the gate driving circuit 100, such as a nth stage scan signal, a second scan signal, or the like.
In the display panel 1000 provided by some embodiments of the disclosure, the gate driving circuit 100 includes the multiple stages of gate driving units and at least one repair line. In the embodiments of the disclosure, with the design of the repair line, because the repair line can provide the mth stage scan signal, the nth stage pulse signal can be output normally when the nth stage scan signal transmitted to the nth stage gate driving unit fails, thereby improving the yield of the gate driving circuit 100, and further improving the quality of the display panel 1000.
The above-mentioned embodiments of the disclosure are described in detail. Specific examples are applied herein to explain the principle and the embodiments of the disclosure, and the above-mentioned embodiments are only used to help understand the method and the core idea of the disclosure, and do not therefore limit a scope of the disclosure. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of the disclosure, or directly or indirectly applied in other related technical fields, shall be included in the scope of the protection of the disclosure.
Number | Date | Country | Kind |
---|---|---|---|
202310516335.8 | May 2023 | CN | national |