Patent Application
20120247658
This application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2011-071736 filed on Mar. 29, 2011, the entire content of which is hereby incorporated by reference.
1. Field of the Invention
The present invention relates to a glass body cutting method, a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic apparatus, and a radio-controlled time piece.
2. Description of the Related Art
In recent years, in mobile phone or portable information terminal devices, a piezoelectric vibrator (package) which employs quartz or the like has been used as a time source, a timing source of a control signal or the like, a reference signal source, or the like. As this type of piezoelectric vibrator, a variety of piezoelectric vibrators has been proposed, in which a piezoelectric vibrator of a surface mount device (SMD) type is known as an example thereof. For example, this type of piezoelectric vibrator includes a base substrate and a lid substrate which are bonded to each other, a cavity which is formed between both the substrates, and a piezoelectric vibrating piece (electronic component) which is accommodated in the cavity in an air-tightly sealed state.
In this regard, in manufacturing the piezoelectric vibrator as described above, recess portions for cavities are formed on a wafer for lid substrates and piezoelectric vibrating pieces are mounted on a wafer for base substrates, and then, both the wafers are anodically bonded to each other through an adhesive layer, to thereby form a wafer bonded body in which a plurality of packages is formed in a matrix of the wafers. Then, the wafer bonded body is cut for each package (each cavity) formed in the wafer bonded body, to thereby manufacture a plurality of piezoelectric vibrators (packages) in which the piezoelectric vibrating piece is air-tightly sealed in the cavity.
In this regard, as a cutting method of the wafer bonded body, a method of cutting (dicing) a wafer bonded body along a thickness direction thereof, using a blade in which a diamond is attached to its tooth tip, has been proposed, for example.
However, in the cutting method using the blade, it is necessary to form a cutting margin between the cavities in consideration of the width of the blade, and thus, such problems arise that the number of piezoelectric vibrators extracted from one sheet of wafer bonded body becomes small, chippings are generated in cutting, and its cut surface becomes coarse. Further, the processing speed is lowered, thereby decreasing the production efficiency.
Further, a method of forming a scratch (scribe line) along a planned cutting line on the surface of a wafer bonded body using a diamond which is embedded in the tip end of a metallic bar and applying a tear stress along the scribe line for cutting has been proposed.
However, in this method, a lot of chippings are generated on the scribe line, and thus, the wafers are easily broken and the surface precision of its cut surface becomes poor.
In this regard, in order to solve the above problems, a method of cutting a wafer bonded body using laser has been developed. In this method, for example, as disclosed in JP-A-2002-192370, a focus point is formed inside the wafer bonded body and is irradiated by laser light, to thereby form a modified region along a planned cutting line of the wafer bonded body by a large amount of photon absorption. Then, a tear stress (impact force) is applied to the wafer bonded body, to thereby cut the wafer bonded body using the modified region as a starting point.
In this regard, as the method of cutting the wafer bonded body using laser as described above, a method may be considered in which the surface of the wafer bonded body is irradiated by laser light along a planned cutting line thereof to form a scribe line and a tear stress is then applied along the scribe line for cutting.
In this method, when the tear stress is applied along the scribe line, the wafer bonded body is firstly disposed on a supporter. At this time, the wafer bonded body is disposed so that the front surface thereof on which the scribe line is formed faces the supporter. Then, the tear stress is applied while the front surface of the wafer bonded body and the rear surface on the opposite side are being pressed by a cutting blade.
However, in this method, when the wafer bonded body is cut, in a case where cut pieces are generated from a cutting portion of the wafer bonded body, these cut pieces may enter between the wafer bonded body and the supporter. In this case, for example, when the tear stress is applied to the wafer bonded body in order to cut a different portion of the wafer bonded body, a crack may be generated in the wafer bonded body with the cut pieces entered between the wafer bonded body and the supporter serving as a starting point, to thereby reduce the yield ratio.
An advantage of some aspects of the invention is to provide a glass body cutting method, a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic apparatus, and a radio-controlled time piece which are capable of suppressing the generation of a crack in a glass body.
In order to solve the above problems, the invention provides the following means.
According to a first aspect of the invention, there is provided a glass body cutting method for cutting a glass body along a planned cutting line, the method including: a groove forming process of forming a groove on one surface of the glass body along the planned cutting line by irradiation of a laser light along the planned cutting line; an attachment process of attaching an adhesive sheet to the one surface to cover at least the groove, after the groove forming process; and a cutting process of cutting the glass body along the planned cutting line by applying a tear stress along the planned cutting line while pressing a cutting blade against the other surface of the glass body in a state where the glass body is disposed on a supporter section through the adhesive sheet, after the attachment process.
According to this configuration, since the cutting process is performed in a state where the adhesive sheet is attached to the one surface of the glass body to cover the groove, even though cut pieces are generated from a cutting portion of the glass body in the cutting process, it is possible to suppress the cut pieces from entering between the adhesive sheet and the glass body.
Here, since the cutting process is performed in a state where the glass body is disposed on the supporter section through the adhesive sheet, as described above, it is possible to suppress the cut pieces from entering between the adhesive sheet and the glass body, and thus, it is possible to suppress the cut pieces from entering between the glass body and the supporter section. Thus, it is possible to suppress generation of a crack in the glass body.
Further, the adhesive sheet and the supporter section may be formed of a transparent material. Further, in the cutting process, the position of the groove may be detected by imaging the one surface using imaging means with the adhesive sheet and the supporter section being disposed between the one surface and the imaging means, and the position of the blade tip of the cutting blade on the glass body may be aligned on the basis of the detection result.
According to this configuration, since the groove and the cutting blade are aligned to each other, it is possible to reliably apply the tear stress along the planned cutting line, and to smoothly and easily cut the glass body.
Further, the adhesive sheet may include a sheet material, and an adhesive layer which attaches the sheet material to the glass body and has an adhesive force which changes by irradiation of ultraviolet light. Further, the method may include an ultraviolet light irradiation process of irradiating the adhesive layer of the adhesive sheet with the ultraviolet light to reduce the adhesive force of the adhesive layer, after the cutting process.
According to this configuration, by reducing the adhesive force of the adhesive layer (for example, an ultraviolet curing type or the like) in which the adhesive force changes by irradiation of the ultraviolet light, it is possible to easily separate the adhesive sheet from the glass body.
According to a second aspect of the invention, there is provided a manufacturing method of a package which is provided with a cavity in which an electric component is able to be sealed inside the bonded glass, as the glass body, in which bonding surfaces of a plurality of glass substrates are bonded to each other through a bonding material, by cutting the bonded glass using the glass body cutting method as described above, wherein the bonded glass is cut along the planned cutting lines which partition regions where the plurality of packages is formed, in the cutting process.
According to this configuration, since the package is manufactured using the glass body cutting method according to the second aspect, it is possible to suppress generation of a crack in the bonded glass. Thus, it is possible to increase the number of packages with high quality extracted from one sheet of bonded glass, thereby enhancing the yield ratio.
Further, according to a third aspect of the invention, there is provided a package formed using the package manufacturing method as described above, wherein a chamfer portion obtained by tearing the groove is provided in an outer edge portion of a surface which is configured by the one surface of the bonded glass.
According to this configuration, since the chamfer portion is formed, even though a tool for extracting the package is in contact with a corner portion when the cut package is extracted, it is possible to suppress generation of chippings due to the contact, to thereby prevent the package from being broken due to the chippings. Thus, it is possible to secure air-tightness in the cavity, to thereby provide a package with high reliability.
Here, since the chamfer portion can be automatically formed by cutting the bonded glass along the groove (planned cutting line) after the groove is formed by the laser, it is not necessary to form each chamfer portion in the package after being cut in a separate process. As a result, it is possible to suppress cost increases and to enhance the process efficiency, compared with a case where the chamfer portion is formed in a separate process.
Further, according to a fourth aspect of the invention, there is provided a piezoelectric vibrator in which a piezoelectric vibrating piece is air-tightly sealed in the cavity of the package as described above.
According to this configuration, it is possible to provide a piezoelectric vibrator with superior vibration characteristics and high reliability, in which air-tightness in the cavity is secured.
Further, according to a fifth aspect of the invention, there is provided an oscillator in which the piezoelectric vibrator as described above is electrically connected to an integrated circuit as an oscillator element.
Further, according to a sixth aspect of the invention, there is provided an electronic apparatus in which the piezoelectric vibrator as described above is electrically connected to a timer section.
Further, according to a seventh aspect of the invention, there is provided a radio-controlled time piece in which the piezoelectric vibrator as described above is electrically connected to a filter section.
Since the oscillator, the electronic apparatus and the radio-controlled time piece according to these aspects have the piezoelectric vibrator as described above, it is possible to provide a product with high reliability, in a similar way to the piezoelectric vibrator.
According to the glass body cutting method of the invention, it is possible to suppress generation of a crack in the glass body.
Further, according to the package manufacturing method of the invention, since the package is formed using the above-described glass body cutting method according to the invention, it is possible to increase the number of packages with high quality which are extracted from one sheet of bonded glass, thereby enhancing the yield ratio.
Further, according to the package of the invention, since the package is formed using the above-described glass body cutting method according to the invention, it is possible to secure air-tightness in the cavity, and to provide a package with high reliability.
Further, according to the piezoelectric vibrator of the invention, it is possible to provide a piezoelectric vibrator with superior vibration characteristics and high reliability, in which air-tightness in the cavity is secured.
According to the oscillator, the electronic apparatus and the radio-controlled time piece of the invention, since the piezoelectric vibrator as described above is provided, it is possible to provide a product with high reliability, in a similar way to the piezoelectric vibrator.
Hereinafter, embodiments of the invention will be described with reference to the accompanying drawings.
As shown in
The base substrate 2 is formed in a plate shape by a transparent insulation substrate made of a glass material, for example, soda-lime glass. A pair of through holes 21 and 22, in which the pair of through hole electrodes 8 and 9 are formed, are formed on the base substrate 2. The through holes 21 and 22 form a tapered cross-sectional shape in which their diameter is gradually decreased toward a front surface 2b (upper surface in
The lid substrate 3 is a transparent insulation substrate made of a glass material, for example, soda-lime glass, in a similar way to the base substrate 2, and is formed in a plate shape to have the size capable of overlapping with the base substrate 2. Further, on a rear surface 3b (lower surface in
Further, a chamfer portion 90 in which a corner portion of the lid substrate 3 is chamfered is formed on an upper edge of the lid substrate 3, in a scribing process (which will be described later) in a manufacturing process of the piezoelectric vibrator 1.
The piezoelectric vibrating piece 5 is a vibrating piece of a tuning fork type which is formed of a piezoelectric material such as quartz crystal, lithium tantalite, or lithium niobate, which vibrates as a predetermined voltage is supplied thereto.
The piezoelectric vibrating piece 5 is a vibrating piece of a tuning fork type which includes one pair of vibrating arms 24 and 25 which are arranged in parallel and a base portion 26 which integrally fixes the base ends of the pair of vibrating arms 24 and 25. The piezoelectric vibrating piece 5 includes an excitation electrode which includes one pair of a first excitation electrode and a second excitation electrode (not shown) which vibrate the vibrating arms 24 and 25 on outer surfaces of the pair of vibrating arms 24 and 25, and one pair of mount electrodes which electrically connect the first excitation electrode and the second excitation electrode with guide electrodes 27 and 28 (which will be described later) (all not shown).
As shown in
Further, a bonding material 23 for anodic bonding, which is made of Al, is formed on the side of the front surface 2b of the base substrate 2 (on the side of the bonding surface on which the lid substrate 3 is bonded). This bonding material 23 has a film thickness of approximately 3000 Å to 5000 Å, for example, and is formed along an outer peripheral portion of the base substrate 2 to face the frame region 3c of the lid substrate 3. Further, as the bonding material 23 and the frame region 3c of the lid substrate 3 are anodically bonded with each other, the cavity C is sealed in a vacuum. The side surface of the bonding material 23 is formed on an approximately the same surface as the side surfaces 2c and 3e of the base substrate 2 and the lid substrate 3 (side surface (outer side surface) 10a) of the package 10).
The external electrodes 6 and 7 are installed on opposite sides of the rear surface 2a of the base substrate 2 (surface which is opposite to the bonding surface in the substrate 2) in the length direction, and are electrically connected to the piezoelectric vibrating piece 5 through the respective through hole electrode 8 and 9 and the respective guide electrodes 27 and 28. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through hole electrode 8 and one guide electrode 27. Further, the other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through hole electrode 9 and the other guide electrode 28. The side surfaces (outer circumferential edge) of the external electrodes 6 and 7 are positioned on an inner side with reference to the side surface 2c of the base substrate 2.
The through hole electrodes 8 and 9 are formed by a cylindrical body 32 and a core portion 31 which are integrally fixed to the through holes 21 and 22 by burning, and function to maintain air-tightness in the cavity C by completely closing the through holes 21 and 22 and to electrically conduct the external electrodes 6 and 7 and the guide electrode 27 and 28. Specifically, one through hole electrode 8 is positioned below the guide electrode 27 between the external electrode 6 and the base portion 26, and the other through hole electrode 9 is positioned below the guide electrode 28 between the external electrode 7 and the excitation arm 25.
The cylindrical body 32 is obtained by burning a glass fit in the form of paste. The cylindrical body 32 is formed in a cylinder shape which has flat opposite ends and has approximately the same thickness as that of the base substrate 2. Further, the core portion 31 is arranged to pass through a central hole of the cylindrical body 32, in the center of the cylindrical body 32. Further, in the present embodiment, according to the shapes of the through holes 21 and 22, the appearance of the cylindrical body 32 is formed to be a conical shape (tapered cross-sectional shape). Further, the cylindrical body 32 is burned in a state of being embedded in the through holes 21 and 22, and is tightly fixed to the through holes 21 and 22.
The above-described core portion 31 is a conductive core member which is formed in a cylindrical shape by a metallic material, and is formed to have flat opposite ends and approximately the same thickness as the thickness of the base substrate 2, in a similar way to the cylindrical body 32. In the through hole electrodes 8 and 9, the electric conductivity is secured through the conductive core portions 31.
Here, as shown in
The protection film 11 has a film thickness of about 1000 Å, for example, on the front surface 3d of the lid substrate 3 (surface which is opposite to the bonding surface in the lid substrate 3). Further, an engraved marking 13 (see
Further, the protection film 11 has a film thickness of about 300 to 400 Å, for example, on the side surface 10a of the package 10, and is formed to cover the bonding material 23 which is exposed to the outside from between the base substrate 2 and the lid substrate 3. Further, the circumferential end (lower end in
In a case where the piezoelectric vibrator 1 having such a configuration is operated, a predetermined drive voltage is applied to the external electrodes 6 and 7 which are formed on the base substrate 2. Thus, it is possible to allow electric current to flow in each excitation electrode of the piezoelectric vibrating piece 5, and to vibrate the pair of vibrating arms 24 and 25 at a predetermined frequency in a direction where they move close to or away from each other. Further, it is possible to use the piezoelectric vibrator 1 as a time source, a timing source of a control signal, a reference signal source, or the like, using the vibration of the pair of vibrating arms 24 and 25.
Next, a manufacturing method of the piezoelectric vibrator as described above will be described with reference to a flowchart shown in
Firstly, as shown in
Next, as shown in
Next, in order to secure air-tightness with respect to the wafer 40 for base substrates (which will be described later), a polishing process (S23) is performed for polishing at least the side of the rear surface 50a of the wafer 50 for lid substrates which becomes the bonding surface with the wafer 40 for base substrates for specular working of the rear surface 50a. Through the above-described processes, the first wafer manufacturing process (S20) ends.
Next, at the same time as in the above-described process or at a timing before and after the above-described process, a second wafer manufacturing process is performed for manufacturing the wafer 40 for base substrates which becomes the base substrate 2 later up to a state immediately before the anodic bonding is performed (S30). Firstly, a soda-lime glass is polished to have a predetermined thickness and is cleansed, and then, the wafer 40 for base substrates of a disc shape is formed by removing a modified layer of the outermost surface by etching or the like (S31). Then, a through hole forming process is performed for forming a plurality of through holes 21 and 22 for arrangement of one pair of through hole electrodes 8 and 9 in the wafer 40 for base substrates by press working or the like, for example (S32). Specifically, by forming recess portions from the rear surface 40b (the other surface of the glass member) of the wafer 40 for base substrates by press working or the like, and by performing polishing from at least the side of the front surface 40a of the wafer 40 for base substrates to open the recess portions, it is possible to form the through holes 21 and 22.
Subsequently, a through hole electrode forming process (S33) is performed for forming the through hole electrodes 8 and 9 in the through holes 21 and 22 which are formed in the through hole forming process (S32). Thus, in the through holes 21 and 22, the core portions 31 are held at the same level as the front and rear surfaces 40a and 40b (upper and lower surfaces in
Next, a bonding material forming process is performed for patterning a conductive material on the front surface 40a of the wafer 40 for base substrates to form the bonding material 23 (S34), and a guide electrode forming process is performed (S35). The bonding material 23 is formed in a region other than the region where the cavities C in the wafer 40 for base substrates are formed, that is, in the entire bonding region with respect to the rear surface 50a of the wafer 50 for lid substrates. Through the above-described processes, the second wafer manufacturing process (S30) ends.
Next, each piezoelectric vibrating piece 5 which is manufactured in the piezoelectric vibrating piece manufacturing process (S10) is mounted on the respective guide electrodes 27 and 28 of the wafer 40 for base substrates which is manufactured in the second wafer manufacturing process (S30), through the bump B such as gold (S40). Further, an overlapping process is performed for overlapping the wafer 40 for base substrates and the wafer 50 for lid substrates which are manufactured in the above-described manufacturing processes of the respective wafers 40 and 50 (S50). Specifically, using a reference mark or the like (not shown) as an indicator, the wafers 40 and 50 are aligned in correct positions. Thus, the mounted piezoelectric vibrating piece 5 becomes in the state of being accommodated in the cavity C which is surrounded by the recess portion 3a which are formed on the wafer 50 for lid substrates and the wafer 40 for base substrates.
After the overlapping process, two overlapped wafers 40 and 50 are disposed in an anodic bonding device (not shown), and a bonding process is performed for performing anodic bonding by applying a predetermined voltage in a predetermined temperature atmosphere in a state where an outer peripheral portion of the wafers is clamped by a holding mechanism (not shown) (S60). Specifically, the predetermined voltage is applied between the bonding material 23 and the wafer 50 for lid substrates. Then, an electrochemical reaction occurs in the interface between the bonding material 23 and the wafer 50 for lid substrates, so that they are tightly attached and anodically bonded to each other. Thus, it is possible to seal the piezoelectric vibrating piece 5 in the cavity C, thereby obtaining a wafer bonded body 60 (for example, thickness of about 0.4 mm to 0.9 mm) in which the wafer 40 for base substrates and the wafer 50 for lid substrates are bonded to each other. Further, by anodically bonding the wafers 40 and 50 as in the present embodiment, it is possible to prevent deviation due to deterioration with time, shock or the like, warping of the wafer bonded body 60, or the like, thereby tightly bonding the wafers 40 and 50, compared with a case where the wafers 40 and 50 are bonded to each other by an adhesive or the like.
Thereafter, a pair of external electrodes 6 and 7 which is electrically connected to a pair of through hole electrodes 8 and 9, respectively, is formed (S70), and the fine adjustment of the frequency of the piezoelectric vibrator 1 is performed (S80).
After the fine adjustment of the frequency ends, a dividing process is performed for cutting (tearing) the wafer bonded body 60 into individuals (S90).
In the dividing process (S90), as shown in
The magazine 82 can be manufactured by attaching the UV tape 80 to the ring frame 81 from one surface 81a of the ring frame 81 to block an opening 81b. Further, in a state where the central axis of the ring frame 81 and the central axis of the wafer bonded body 60 coincide with each other, the wafer bonded body 60 is adhered to the adhered surface of the UV tape 80 (S92). Specifically, the side of the rear surface 40b of the wafer 40 for base substrates (external electrode side) is adhered to the adhered surface of the UV tape 80. Thus, the wafer bonded body 60 is in a state of being set in the opening 81b of the ring frame 81. In this state, the wafer bonded body 60 is transported to a laser scriber (not shown) (S93).
Here, as shown in
The spot diameter of the laser light R1 in the trimming process (S94) is set to about 10 μm or more and about 30 μm or less, for example. Further, as other conditions of the trimming process (S94), for example, it is preferable to set a processing point average output of the first laser 87 to about 1.0 W, a frequency modulation to about 20 kHz, and a scanning speed to about 200 mm/sec.
Thus, as the bonding material 23 on the contour line M absorbs the laser light R1 and is heated, the bonding material 23 is melted and shrinks outside from the irradiation region (contour line M) of the laser light R1. As a result, a trimming line T which is formed as the bonding material 23 is separated from the bonded surface is formed on the bonding surfaces of the wafers 40 and 50 (the rear surface 50a of the wafer 50 for lid substrates and the front surface 40a of the wafer 40 for base substrates).
Next, as shown in
The scribe line M′ in the present embodiment has a width of about 14 μm and a depth of about 11 μm. It is preferable to constantly set the magnitude of the depth D with respect to the width W. As other conditions of the scribing process (S95), for example, it is preferable to set a processing point output of the second laser 88 to about 250 mW to 600 mW, pulse energy to about 100 μJ, processing threshold fluence to about 30 J/(cm2·pulse), scanning speed to about 40 mm/sec to 60 mm/sec, aperture to about 10 mm, and frequency to about 65 kHz.
Then, a debris removing process may be performed for removing debris generated when the scribe line M′ is formed.
Next, as shown in
Such a separator 83 is a separator in which an ultraviolet curing resin, for example, an acrylic adhesive (adhesive layer) is coated on a flexible sheet material made of polyolefin. Specifically, UHP-1525M3 made by Denki Kagaku Kogyo, D510T made by Lintech Corp., or the like is preferably used as the separator 83. Further, the separator 83 is formed to have a thickness of 20 μm or more and 30 μm or less. In the present embodiment, the separator 83 having a thickness of 25 μm is used. If the thickness of the separator 83 is thinner than 20 μm, in the breaking process (S103) (which will be described later), the separator 83 may be cut together with the wafer bonded body 60, which is not preferable. On the other hand, if the thickness of the separator 83 is thicker than 30 μm, a tear stress which acts on the wafer bonded body 60 from the separator 83 is alleviated by the separator 83. Thus, the wafer bonded body 60 is not smoothly cut, and thus, the surface accuracy of the cut surface may be reduced, which is not preferable.
Next, a cutting process is performed for cutting the wafer bonded body 60 in which the scribe line M′ is formed into individual packages 10 (S100).
In the cutting process (S100), firstly, the wafer bonded body 60 is transported into a breaking device 79 in a state of being supported between the UV tape 80 and the separator 83 (S102).
The breaking device 79 includes a stage 75 for mounting the wafer bonded body 60, a cutting blade 70 for cutting the wafer bonded body 60, and a CCD camera (imaging means) 74 which is disposed below the stage 75 (on the side which is opposite to the mounting surface of the wafer bonded body 60). The stage 75 is configured by a silicon rubber 71. The silicon rubber 71 is formed of an optically transparent material in a bed shape. Further, the cutting blade 70 has a blade length which is formed to be longer than the diameter of the wafer bonded body 60, and a knife angle θ of about 60° to about 90°, for example.
In this case, in the breaking device 79, the wafer bonded body 60 is set in a state where the front surface 50b of the wafer 50 for lid substrates is directed to the stage 75. That is, the wafer bonded body 60 is mounted on the silicon rubber 71 through the separator 83.
Further, a breaking process is performed for applying a tear stress to the wafer bonded body 60 which is set in the breaking device 79 (S103). In the breaking process (S103), firstly, alignment is performed so that the cutting blade 70 is disposed on the scribe line M′ (trimming line T). Specifically, the position of the scribe line M′ on the wafer 50 for lid substrates is detected by the CCD camera 74 which is disposed below the stage 75, and the cutting blade 70 moves along the surface direction of the wafer bonded body 60 on the basis of the detection result. Thus, it is possible to perform the alignment of the cutting blade 70. Thereafter, the cutting blade 70 moves (descends) in the thickness direction of the wafer bonded body 60, and the blade of the cutting blade 70 is pressed against the rear surface 40b of the wafer 40 for base substrates. Thereafter, the cutting blade 70 is moved by a predetermined stroke (for example, about 50 μm) to push the cutting blade 70 along the thickness direction of the wafer bonded body 60. Here, a predetermined load (for example, 10 kg/inch) is applied to the wafer bonded body 60.
Thus, a crack is generated in the wafer bonded body 60 along the thickness direction, and the wafer bonded body 60 is cut to be folded along the scribe line M′ which is formed on the wafer 50 for lid substrates. Here, since the wafer bonded body 60 is set on the silicon rubber 71 of the stage 75, the breaking device 79 according to the present embodiment pushes the cutting blade 70 into the wafer bonded body 60 to elastically deform the silicon rubber 71. Accordingly, the wafer bonded body 60 and the separator 83 which is attached to the wafer bonded body 60 are slightly bended to be curved toward the stage 75 along the front surface of the silicon rubber 71. Thus, the tear stress applied to the wafer bonded body 60 is easily concentrated on the bottommost portion of the scribe line M′. Further, the load due to the cutting blade 70 which acts on a region other than a contact point of the cutting blade 70 and the wafer bonded body 60 is escaped (absorbed or attenuated) to the silicon rubber 71.
Thus, in a case where the load is applied to the wafer bonded body 60, the bottommost portion of the scribe line M′ becomes a starting point of generation of the crack, and the crack is easily propagated toward the rear surface 40b of the wafer 40 for base substrates from the front surface 50a of the wafer 50 for lid substrates along the thickness direction, in the wafer bonded body 60. As a result, the wafer bonded body 60 is cut to be folded along the groove. Further, the above-described tear stress is a tensile stress generated in a direction separating from the scribe line M′ (direction from which the respective packages 10 are separated from each other).
Further, by pressing the cutting blade 70 for each scribe line M′ by the above-described method, it is possible to separate the wafer bonded body 60 into the packages in a batch for each contour line M. Through the above-described processes, the cutting process (S100) ends.
Thereafter, the separator 83 which is attached to the wafer bonded body 60 is separated (S104). At this time, the separator 83 is irradiated with UV to reduce the adhesive force of the separator 83. Thus, it is possible to easily separate the separator 83 from the wafer bonded body 60.
Next, the UV tape 80 of the magazine 82 is irradiated with UV to slightly reduce the adhesive force of the UV tape 80 (S111). In this state, the wafer bonded body 60 is still in the state of being attached to the UV tape 80.
Next, as shown in
The expander 91 includes a base ring 92 of a circular ring shape in which the ring frame 81 is set, and a disc-like heater panel 93 which is disposed inside the base ring 92 and is formed to be larger in size than the wafer bonded body 60. In the heater panel 93, a heat transfer type heater (not shown) is mounted on a base plate 94 in which the wafer bonded body 60 is set, and the central axis of the heater panel 93 is disposed to coincide with the central axis of the base ring 92. Further, the heater panel 93 is formed to be able to move along the axial direction by drive means (not shown). Although not shown, the expander 91 also includes a holding member which holds the ring frame 81 which is set on the base ring 92 between the holding member and the base ring 92.
In order to perform the expansion process (S113) using such a device, before the wafer bonded body 60 is set in the expander 91, an inner ring 85a among grip rings 85 (which will be described later) is firstly set outside the heater panel 93. Here, the inner ring 85a is set to be fixed to the heater panel 93 and move together with the movement of the heater panel 93. The grip rings 85 are resin rings which have an inner diameter which is larger than the outer diameter of the heater panel 93 and is smaller than the inner diameter of the opening 81b of the ring frame 81, and include the inner ring 85a and an outer ring 85b (see
Thereafter, the wafer bonded body 60 which is fixed to the magazine 82 is set in the expander 91. Here, the wafer bonded body 60 is set so that the side of the UV tape 80 is directed toward the heater panel 93 and the base ring 92. Specifically, in a state where the rear surface 40b of the wafer bonded body 60 and the heater panel 93 face each other and one surface 81a of the ring frame 81 and the base ring 92 face each other, the wafer bonded body 60 is set in the expander 91.
Thus, the wafer bonded body 60 is set on the heater panel 93 through the UV tape 80. Further, the ring frame 81 is held between the base ring 92 and the holding member (not shown) by the holding member.
Next, the UV tape 80 is heated to a temperature of 50° C. or more by a heater of the heater panel 93. As the UV tape 80 is heated to the temperature of 50° C. or more, the UV tape 80 is softened to easily extend. Further, as shown in
Next, as shown in
In this case, since the bonding material 23 is exposed to the side surface 10a of the package 10, in order to form the protection film 11 to cover the bonding material 23, it is necessary to separately dispose all the packages 10 so that the side surfaces 10a are exposed.
Thus, according to the present embodiment, since the protection film forming process is performed using the state where the plurality of packages 10 is separated in the expansion process, it is not necessary to separately re-dispose all the packages 10, thereby enhancing the manufacturing efficiency. That is, since the protection film 11 can be formed in a state where the space between the respective packages 10 is secured, it is possible to uniformly form the protection film 11 with respect to the bonding material 23 which is exposed from between the base substrate 2 and the lid substrate 3 in each package 10.
Further, since it is possible to form the protection film 11 with respect to the divided plurality of packages 10 in a batch by performing sputtering in a state where the plurality of packages 10 is attached to the UV tape 80 which is expanded, it is possible to enhance the manufacturing efficiency compared with a case where the protection film 11 is individually formed in the package 10. Further, it is possible to suppress the movement of the packages 10 in transportation to the sputtering device or in film formation.
Further, by performing sputtering from the side of the lid substrate 3 in a state where the UV tape 80 is attached to the side of the rear surface 2a of the base substrate 2, it is possible to suppress the film formation material from entering into the side of the rear surface 2a of the base substrate 2. Thus, it is possible to suppress the film formation material from being attached to the external electrodes 6 and 7, and it is thus possible to suppress the space between the external electrodes 6 and 7 from being bridged by the protection film 11. Thus, even in a case where a conductive metal material such as Cr is used for the protection film 11, it is possible to prevent a short circuit between the external electrodes 6 and 7. Further, in the present embodiment, since the side surfaces of the external electrodes 6 and 7 are positioned on the inner side with reference to the side surface 2c of the base substrate 2, the circumferential end portion of the protection film 11 and the external electrodes 6 and 7 are separately disposed with the gap portion 12 (see
In the present embodiment, since the film formation material is disposed to face the front surface 3d of the lid substrate 3, the front surface 3d of the lid substrate 3 is easily attached to the film formation material, compared with the side surface 10a of the package 10. Specifically, the film formation speed ratio of the front surface 3d of the lid substrate 3 and the side surface 10a of the package 10 becomes about 3:1 to 4:1. In order to reduce the film formation speed ratio, it is preferable to perform sputtering while rotating the grip rings 85 (package 10).
Next, a pickup process is performed for extracting the piezoelectric vibrator 1 in which the protection film 11 is formed. In the pickup process (S116), the UV tape 80 is irradiated with UV to reduce the adhesion force of the UV tape 80. Thus, the piezoelectric vibrator 1 is separated from the UV tape 80. Thereafter, the position of each piezoelectric vibrator 1 is ascertained by image recognition or the like, and the piezoelectric vibrator 1 is absorbed by a nozzle or the like to extract the piezoelectric vibrator 1 which is separated from the UV tape 80. In this way, by separating the piezoelectric vibrator 1 from the UV tape 80 due to the UV irradiation of the UV tape 80, it is possible to easily extract the diced piezoelectric vibrator 1. In the present embodiment, since the division is performed along the scribe line M′ of the wafer 50 for lid substrates in the above-described breaking process (S103), the chamfer portion 90, in which the C chamfer is formed by the scribe line M′ is formed, on the upper edge of the lid substrate 3 of the divided piezoelectric vibrator 1.
Hereinbefore, it is possible to manufacture at one time the plurality of piezoelectric vibrators 1 of a surface mount type of a two-layer structure shown in
Thereafter, an internal electric characteristic inspection is performed (S110). That is, the resonant frequency, resonant resistance value, drive level characteristics (excitation power dependency of the resonant frequency and resonant resistance value), and the like of the piezoelectric vibrating piece 5 are measured to be checked. Further, insulating resistance characteristics and the like are also checked. Further, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check the size, quality and the like.
The electrical characteristic inspection and the appearance inspection are completed, and then, the marking 13 is finally performed with respect to the piezoelectric vibrator 1 which passes the inspections (S120). As shown in
In the marking process (S120), the output of the laser light R3 is preferably adjusted to such a degree that it penetrates only the protection film 11. Thus, it is possible to suppress the laser light R3 from penetrating the base substrate 2 to reach the cavity C. That is, it is possible to suppress the piezoelectric vibrating piece 5 from being irradiated with the laser light R3 to suppress damage to the piezoelectric vibrating piece 5, and it is thus possible to suppress the electric characteristics (frequency characteristics) of the piezoelectric vibrating piece 5 from being affected.
Further, in order to reliably suppress the transmission of the laser light R3 into the base substrate 2, it is preferable to use a laser having a high absorption factor in the glass material. As such a laser, for example, it is possible to use a CO2 laser of a wavelength of 10.6 μm, a fourth harmonic laser of a wavelength of 266 nm, or the like. Further, by using the CO2 laser having a relatively long wavelength among these lasers, it is possible to reliably suppress damage to the base substrate 2.
As described above, in the present embodiment, since the cutting process (S100) is performed in a state where the separator 83 is attached to the front surface 50a of the wafer 50 for base substrates of the wafer bonded body 60 to cover the scribe line M′, even though cut pieces are generated from the cutting portion of the wafer bonded body 60 at the cutting process (S100), it is possible to suppress the cut pieces entering between the separator 83 and the wafer bonded body 60.
Here, since the cutting process (S100) is performed in a state where the wafer bonded body 60 is mounted on the stage 75 through the separator 83, as described above, it is possible to suppress the cut pieces from entering into the separator 83 and the wafer bonded body 60, and thus, it is possible to suppress the cut pieces from entering between the wafer bonded body 60 and the stage 75. Thus, it is possible to suppress generation of the crack in the wafer bonded body 60.
Further, in the present embodiment, the breaking process is performed in a state where the wafer bonded body 60 is set on the silicon rubber 71 of the stage 75.
According to this configuration, as the cutting blade 70 is pressed into the wafer bonded body 60 along the scribe line M′, the silicon rubber 71 is elastically deformed and the wafer bonded body 60 is slightly deformed to bend toward the silicon rubber 71 according to the elastic deformation of the silicon rubber 71. Thus, the tear stress applied to the wafer bonded body 60 is easily concentrated on the bottommost portion of the scribe line M′.
As a result, in a case where the tear stress is applied to the wafer bonded body 60, the bottommost portion of the scribe line M′ becomes a starting point of generation of the crack, and the crack is easily propagated toward the rear surface 40b of the wafer 40 for base substrates from the front surface 50a of the wafer 50 for lid substrates, in the wafer bonded body 60. Thus, the wafer bonded body 60 is cut to be folded along the scribe line M′.
Accordingly, it is possible to smoothly and easily cut the wafer bonded body 60 along the scribe line M′. Thus, it is possible to suppress generation of crushing and to suppress generation of chippings, to thereby obtain a reliable cut surface without traces of residual stress. Thus, it is possible to cut the piezoelectric vibrator 1 into a desired size from the wafer bonded body 60. As a result, it is possible to increase the number of piezoelectric vibrators 1 with high quality extracted from one wafer bonded body 60, thereby enhancing the yield ratio.
Further, in the breaking process, by moving the cutting blade 70 to press it in the thickness direction of the wafer bonded body 60 in a state where the tip end of the cutting blade 70 is in contact with the rear surface 40b of the wafer 40 for base substrates, it is possible to reliably apply the tear stress along the scribe line M′. Thus, it is possible to facilitate the crack propagation in the thickness direction of the wafer bonded body 60. Further, compared with a case where a cutting blade is dropped to a wafer bonded body in the related art, it is possible to prevent generation of chippings or the like due to impact between the cutting blade and the wafer bonded body 60. Accordingly, it is possible to obtain a more reliable cut surface.
Further, when the cutting blade 70 is in contact with the wafer bonded body 60 in the present embodiment, the cutting blade 70 is positioned on the basis of the position of the scribe line M′ detected by the CCD camera 74.
According to this configuration, it is possible to reliably assign the tear stress along the scribe line M′ by aligning the scribe line M′ and the cutting blade 70, and it is thus possible to smoothly and easily cut the wafer bonded body 60.
Further, since the thickness of the UV tape 80 is set to 160 μm or more, the UV tape 80 is hardly broken in the expansion process (S113). Thus, without exchange of the UV tape 80 used in the scribing process (S95) or the like, it is possible to use the UV tape 80 in the expansion process (S113) as it is. That is, before the expansion process (S113), it is not necessary to perform an exchange process or the like of the UV tape 80, and it is thus possible to prevent decrease in the manufacturing efficiency and increase in the manufacturing cost.
On the other hand, by using the UV tape 80 which is formed to have the thickness of 180 μm or less, it is possible to suppress the force necessary for extending the UV tape 80, thereby enhancing the manufacturing efficiency. Further, since the UV tape 80 is easily available in the market, it is possible to reduce the material cost necessary for the UV tape 80.
Further, in the present embodiment, by performing the expansion process (S113) after the wafer bonded body 60 is divided, it is possible to equivalently enlarge the interval between adjacent piezoelectric vibrators 1 (packages 10), and thus, it is possible to reliably separate the adjacent piezoelectric vibrators 1. Accordingly, when the piezoelectric vibrators 1 are extracted from the UV tape 80 after the expansion process (S113), the divided piezoelectric vibrators 1 are easily recognized (the recognition accuracy is enhanced), and it is thus possible to easily extract the respective piezoelectric vibrators 1.
Further, when the piezoelectric vibrators 1 are extracted from the UV tape 80 after the expansion process (S113), it is possible to prevent the piezoelectric vibrator 1 from being in contact with the adjacent piezoelectric vibrator 1 and to prevent generation of chippings due to contact of the piezoelectric vibrators 1, to thereby prevent breaking of the piezoelectric vibrators 1. Accordingly, it is possible to increase the number of the piezoelectric vibrators 1 with high quality extracted from one sheet of the wafer bonded body 60, thereby enhancing the yield ratio.
By forming the trimming line T by separating the bonding material 23 on the contour line M before the scribing process (S95), it is possible to promote the crack propagation in the thickness direction of the wafer bonded body 60 at the breaking time and to prevent the crack propagation in the surface direction of the wafer bonded body 60.
Further, the lid substrate 3 of the piezoelectric vibrator 1 according to the present embodiment has the chamfer portion 90 in its edge portion.
According to this configuration, in the pickup process (S110), when the divided piezoelectric vibrator 1 is extracted, even in a case where a tool for extracting the piezoelectric vibrator 1 is in contact with the corner portion of the piezoelectric vibrator 1, it is possible to suppress generation of chippings due to the contact. Thus, the piezoelectric vibrator 1 is prevented from being broken due to the chippings.
Thus, it is possible to secure air-tightness in the cavity C, to thereby provide a piezoelectric vibrator 1 with superior vibration characteristics and high reliability.
Since the chamfer portion 90 is automatically formed by the cutting along the scribe line M′ after the scribe line M′ is formed by the second laser 88, it is not necessary to individually form the chamfer portion 90 in the piezoelectric vibrator 1 after cutting. As a result, it is possible to suppress cost increases, compared with a case where the chamfer portion is formed in a separation process, thereby enhancing the working efficiency.
Further, in the present embodiment, the bonding material 23 is covered by the protection film 11 which is higher in corrosion resistance than the bonding material 23, on the outer surface of the package 10.
According to this configuration, since the bonding material 23 is covered by the protection film 11, the bonding material 23 is not exposed to the outside. Thus, it is possible to suppress the bonding material 23 from being in contact with air and to suppress corrosion of the bonding material 23 due to moisture or the like in air. In this case, since the protection film 11 is configured by a material which is higher in corrosion resistance than the bonding material 23, it is possible to suppress the bonding material 23 from being exposed due to corrosion of the protection film 11, and thus, it is possible to reliably suppress corrosion of the bonding material 23. Thus, it is possible to maintain the air-tightness in the cavity C in a stable state over a long time, thereby providing the piezoelectric vibrator 1 with superior vibration characteristics and high reliability.
Next, an oscillator according to an embodiment of the invention will be described with reference to
As shown in
In the oscillator 100 with such a configuration, if a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by piezoelectric characteristics of the piezoelectric vibrating piece 5 and is input to the integrated circuit 101 as an electric signal. The input electric signal is subject to a variety of processes in the integrated circuit 101 and is then output as a frequency signal. Thus, the piezoelectric vibrator 1 functions as an oscillator element.
Further, by selectively setting an RTC (real time clock) module or the like in the configuration of the integrated circuit 101 according to request, it is possible to add a function of controlling an operation date or time of the corresponding device or an external device or a function of providing time, calendar or the like, in addition to the oscillator having a simple time piece function.
As described above, according to the oscillator 100 of the present embodiment, since the piezoelectric vibrator 1 with high quality is provided, it is possible to achieve the oscillator 100 with high quality. In addition, it is possible to obtain a frequency signal with high accuracy which is stable over a long time.
Next, an electronic apparatus according to an embodiment of the invention will be described with reference to
Next, a configuration of the portable information device 110 according to the present embodiment will be described. The portable information device 110 includes the piezoelectric vibrator 1 and a power source 111 for supplying electric power, as shown in
The control section 112 performs an operation control of the entire system, such as transmission and reception of sound data or measurement or display of the current time by controlling the respective functional sections. Further, the control section 112 includes a ROM in which a program is written in advance, a CPU which reads the program written in the ROM for execution, a RAM which is used as a work area of the CPU, and the like.
The timer section 113 includes an integrated circuit in which an oscillation circuit, a register circuit, a counter circuit, an interface circuit and the like are built, and the piezoelectric vibrator 1. If a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristic of quartz crystal, and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and is counted by the register circuit and the counter circuit. Further, signals are transmitted to or received from the control section 112 through the interface circuit, and the current time, current date, calendar information or the like is displayed on the display section 115.
The communicating section 114 has the same function as that of a mobile terminal in the related art, which includes a radio section 117, a sound processing section 118, a switching section 119, an amplifying section 120, a sound input and output section 121, a telephone number input section 122, a ringtone generating section 123 and a call control memory section 124.
The radio section 117 transmits or receives a variety of data such as sound data to or from a base station through an antenna 125. The sound processing section 118 encodes and decodes the sound signal input from the radio section 117 or the amplifying section 120. The amplifying section 120 amplifies the signal input from the sound processing section 118 or the sound input and output section 121 to a predetermined level. The sound input and output section 121 includes a speaker, a microphone or the like, which amplifies the ringtone or receiver sound or collects sound.
Further, the ringtone generating section 123 generates a ringtone according to a call from the base station. The switching section 119 switches the amplifying section 120 which is connected to the sound processing section 118 to the ringtone generating section 123 only in reception, and thus, the ringtone generated in the ringtone generating section 123 is output to the sound input and output section 121 through the amplifying section 120.
The call control memory section 124 stores a program relating to an outgoing and incoming call control of communication. Further, the telephone number input section 122 includes numeric keys of 0 to 9 and other keys, for example, in which the telephone number or the like of the called party is input by pressing these numeric keys.
In a case where the voltage applied to each functional section of the control section 112 or the like by the power source 111 is less than a predetermined value, the voltage detecting section 116 detects the voltage drop and notifies the result to the control section 112. Here, the predetermined voltage value is a value which is set in advance as a minimum voltage necessary for stably operating the communicating section 114, and for example, is about 3V. The control section 112 which receives the notification of the voltage drop from the voltage detecting section 116 restricts the operations of the radio section 117, the sound processing section 118, the switching section 119 and the ringtone generating section 123. Particularly, the operation of the radio section 117 requiring a large amount of power consumption should be necessarily stopped. Further, the information that the communicating section 114 cannot be used due to lack of the remaining battery level is displayed on the display section 115.
That is, the operation of the communicating section 114 is restricted by the voltage detecting section 116 and the control section 112, which can be displayed on the display section 115. This display may be a text message, but an “x” mark may be added to a telephone icon displayed on an upper part of the display surface of the display section 115 as a more intuitive display.
By providing a power cut-off section 126 which is capable of selectively cutting off electric power in the portion relating to the function of the communicating section 114, it is possible to reliably stop the function of the communicating section 114.
As described above, according to the portable information device 110 of the present embodiment, since the piezoelectric vibrator 1 with high quality is provided, it is also possible to achieve a portable information device with high quality. Further, it is possible to display time information with high accuracy which is stabilized over a long time.
Next, a radio-controlled time piece according to an embodiment of the invention will be described with reference to
A radio-controlled time piece 130 according to the present embodiment includes the piezoelectric vibrator 1 which is electrically connected to a filter section 131, as shown in
In Japan, transmitting stations (transmitter station) which transmit standard radio waves are present in Fukushima-ken (40 kHz) and Saga-ken (60 kHz), which transmit the standard radio waves, respectively. Since a long wave such as 40 kHz or 60 kHz has a characteristic of propagating on the ground surface and a characteristic of propagating while being reflected between the ionosphere and the ground surface, the propagation range is wide, and thus, the above-mentioned two transmitting stations cover the entire Japanese domestic area.
Hereinafter, a functional configuration of the radio-controlled time piece 130 will be described in detail.
The antenna 132 receives the standard radio wave of a long wave of 40 kHz or 60 kHz. The long standard radio wave is obtained by AM-modulating time information called a time code into a carrier of 40 kHz or 60 kHz. The received long standard radio wave is amplified by an amplifier 133, and is filtered and syntonized by the filter section 131 having a plurality of piezoelectric vibrators 1.
Each piezoelectric vibrator 1 of the present embodiment includes quartz crystal vibrator sections 138 and 139 having a resonant frequency of 40 kHz and 60 kHz which are the same as the above-mentioned carrier frequency.
Further, the filtered signal of a predetermined frequency is wave-detected and demodulated by a wave-detection and rectifying circuit 134. Subsequently, a time code is read through a waveform shaping circuit 135 and is counted by a CPU 136. The CPU 136 reads information about the current year, integration date, day, time and the like. The read information is reflected in an RTC 137, and correct time information is displayed.
Since the carrier is 40 kHz or 60 kHz, a vibrator having the above-described tuning fork type structure is appropriately used as the quartz crystal vibrator sections 138 and 139.
The above description is an example applied in Japan, but the frequency of the long standard radio wave may be different in other countries. For example, a standard radio wave of 77.5 kHz is used in Germany. Accordingly, in a case where the radio-controlled time piece 130 capable of being applied in other countries is assembled in a mobile device, it is necessary to provide a piezoelectric vibrator 1 of a frequency which is different from that in Japan.
As described above, according to the radio-controlled time piece 130 of the present embodiment, since the piezoelectric vibrator 1 with high quality is provided, it is possible to achieve a radio-controlled time piece with high quality. Further, it is possible to stably count time with high accuracy over a long time.
The technical scope of the invention is not limited to the above-described embodiment, and a variety of modifications may be made in a range without departing from the spirit of the invention.
For example, in the above-described embodiment, the trimming process (S94) is provided, but the process may not be provided.
Further, the separator 83 is not limited to the above-described embodiment. For example, may not be formed by a transparent material.
Further, in the above-described embodiment, in the attachment process (S101), the separator 83 is attached to the front surface 50b of the wafer 50 for lid substrates to cover the entire surface, but as long as the separator 83 covers at least the scribe line M′, its configuration may be appropriately changed. For example, the plurality of separators 83 may be disposed in a strip shape which extends along the scribe line M′, and may be attached to the front surface 50b of the wafer 50 for lid substrates to cover the respective scribe lines M′.
Further, in the above-described embodiment, the scribe line M′ is formed on the front surface 50b of the wafer 50 for lid substrates in the breaking process and the cutting blade 70 is pressed from the rear surface 40b of the wafer 40 for base substrates, but the invention is not limited thereto. For example, the scribe line M′ may be formed on the rear surface 40b of the wafer 40 for base substrates and the cutting blade 70 may be pressed from the front surface 50b of the wafer 50 for lid substrates.
Further, in the above-described embodiment, the expansion process (S113) is performed, but this process may not be performed.
Further, in the above-described embodiment, at the time of cutting the wafer bonded body 60, the magazine 82 is used, but this magazine may not be used.
Further, as long as the piezoelectric vibrator manufacturing method uses the glass body cutting method including the scribing process (S95), the attachment process (S101) and the cutting process (S100), the piezoelectric vibrator manufacturing method is not limited to the above-described embodiment.
For example, the protection film forming process (S115) may not be performed.
Further, the piezoelectric vibrator 1 which is manufactured by this method may have a different structure from the tuning fork type piezoelectric vibrating piece 5 as the piezoelectric vibrating piece, and for example, may be a thick sliding piezoelectric vibrating piece, or the like. Further, the recess portion 3a may be formed in the base substrate 2, or may be formed in the substrates 2 and 3, respectively.
Further, in the above-described embodiment, the piezoelectric vibrator 1 in which the piezoelectric vibrating piece 5 is sealed in the cavity C is manufactured using the above-described glass body cutting method, but it is possible to manufacture a package in which an electronic component which is different from the piezoelectric vibrating piece can be sealed in the cavity.
Further, the above-described glass body cutting method may not be used as one process of package manufacturing, or may be individually applied when the glass body is cut.
Further, in the above-described embodiment, the wafer bonded body 60 in which two wafers 40 and 50 are bonded to each other through the bonding material 23 is cut using the above-described glass body cutting method, but it is also possible to apply the above-described glass body cutting method in cutting a bonded glass in which three or more glass substrates are bonded to each other through a bonding material. Further, it is also possible to apply the above-described glass body cutting method to a case where one sheet of a glass substrate is cut.
Further, the components in the above-described embodiment may be appropriately replaced with known components and the above-described modified examples may be appropriately combined within a range without departing from the spirit of the invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011-071736 | Mar 2011 | JP | national |
