Glass-ceramic composition for recording disk substrate

Information

  • Patent Grant
  • 6610620
  • Patent Number
    6,610,620
  • Date Filed
    Thursday, July 13, 2000
    24 years ago
  • Date Issued
    Tuesday, August 26, 2003
    21 years ago
Abstract
A glass ceramics composition for recording disk substrate contains, essentially, expressed in terms of weight percent on the oxide basis, from 48 to 54.8 wt % of SiO2, from 10 to 30 wt % of Al2O3, from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O.
Description




FIELD OF THE INVENTION




The present invention relates to a glass ceramic composition, more particularly, relates to the glass ceramic composition suitable for magnetic disk substrate.




DESCRIPTION OF THE PRIOR ART




Magnetic disks are mainly used as recording media of computers. Aluminum alloys have heretofore been used as the material of magnetic disk substrates. However, in the recent trend for a smaller size, a thinner thickness, and a higher recording density of magnetic disks, a higher surface flatness and a higher surface smoothness are increasingly desired. Aluminum alloys cannot satisfy the desire, and a material for magnetic disk substrates which can replace aluminum alloys is required. Thus, in particular, recent attention has been focused on the glass substrate for the disk because of its surface flatness and smoothness and excellent mechanical strength.




As glass substrates for disks for recording media, there have been proposed a chemically reinforced glass substrate having a surface reinforced by ion exchange or like method and a glass ceramics substrate on which a crystal component has been precipitated to reinforce the bonding. In recent years, the latter crystallized glass substrate in which a crystallite has been precipitated in glass by heat treatment has drawn particular attention because of its excellent strength and high productivity.




As recent requirements on the performance of a disk for a recording medium have been more stringent, a substrate material has also been required to have an increased strength related directly to the bending or warping of the disk during high-speed rotation. The strength can be represented by the elastic modulus ratio (=Young's modulus/specific gravity) of the substrate material. The elastic modulus ratio having a higher value indicates a higher mechanical strength. However, a glass-ceramics composition conventionally known has the problem that the productivity thereof is reduced significantly if the strength thereof is to be increased.




SUMMARY OF THE INVENTION




It is an object of the present invention to provide a glass ceramic composition which is suitable for use in an improved glass substrate for a recording medium.




Another object of the present invention is to provide a glass ceramic composition which has high productivity irrespective of its high elastic modulus ratio.




Still another object of the present invention is to provide a disk substrate for a recording medium which has high productivity irrespective of its high elastic modulus ratio.




Thus, the present invention provides a glass-ceramics composition consisting essentially, expressed in terms of weight percent on the oxide basis, of, from 48 to 54.8 wt % of SiO


2


, from 10 to 30 wt % of Al


2


O


3


, from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li


2


O.




DESCRIPTION OF THE PREFERRED EMBODIMENT




The present invention provides a glass-ceramics composition consisting essentially, expressed in terms of weight percent on the oxide basis, of, from 48 to 54.8 wt % of SiO


2


, from 10 to 30 wt % of Al


2


O


3


, from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li


2


O.




In the composition, SiO


2


is a glass network former oxide. The melting properties deteriorate if the proportion thereof is lower than 48 wt %. If the proportion thereof exceeds 54.8 wt %, the composition becomes stable as glass so that the crystal is less likely to be precipitated.




Al


2


O


3


is a glass intermediate oxide and a component of an aluminum borate crystal, which is a crystalline phase precipitated by heat treatment. If the proportion of Al


2


O


3


is lower than 10 wt %, the crystal is precipitated in reduced quantity and a sufficient strength is not achieved. If the composition rate of Al


2


O


3


exceeds 30 wt %, the melting temperature is increased and devitrification is more likely to occur.




MgO is a fluxing agent. MgO forms an aggregation of crystal grains. If the proportion of MgO is lower than 10 wt %, the range of operating temperatures is narrowed down and the chemical durability of a glass matrix phase is not improved. If the proportion of MgO exceeds 30%, another crystalline phase is precipitated so that it becomes difficult to achieve a desired strength.




Li


2


O is a fluxing agent. By adding Li


2


O serving as a fluxing agent, production stability has been improved. If the proportion of Li


2


O is lower than 2.4 wt %, the melting properties deteriorate. If the proportion of Li


2


O exceeds 10 wt %, stability in the polishing to cleaning steps is degraded.




Besides the above-mentioned basic components, P


2


O


5


as a fluxing agent and a nuclear forming agent can been added. By adding P


2


O


5


is a fluxing agent and a nuclear forming agent for precipitating a silicate crystal, the crystal are uniformly precipitated over the entire glass. If the proportion of P


2


O


5


is lower than 0.1 wt %, satisfactory nuclei are less likely to be formed so that crystal grains are increased in size or the crystal is precipitated non-uniformly. Consequently, an extremely small and uniform crystal structure is less likely to be obtained and a flat, smooth surface required of the glass substrate as a disk substrate cannot be obtained by polishing. If the proportion of P


2


O


5


exceeds 5 wt %, the reactivity of the glass in a molten state to a filter medium is increased and the devitrifiability thereof is also increased, so that productivity during melt molding is reduced. In addition, the chemical durability is reduced, which may affect a magnetic film, while the stability in the polishing to cleaning steps is lowered.




Besides the above-mentioned basic components, Nb


2


O


5


as a fluxing agent can been added. By adding Nb


2


O


5


serving as a fluxing agent, production stability has been improved. If the proportion of Nb


2


O


5


is lower than 0.1 wt %, the rigidity is not sufficiently improved. If the proportion of Nb


2


O


5


exceeds 9 wt %, the crystallization of the glass becomes unstable and the precipitated crystalline phase cannot be controlled, so that desired characteristics are less likely to be obtained.




Besides the above-mentioned basic components, TiO


2


as a fluxing agent can been added. By adding TiO


2


serving as a fluxing agent, the melting properties and strength are improved, while the chemical durability of the glass matrix phase is improved. If the proportion of Ta


2


O


5


is lower than 0.1 wt %, however, the rigidity is not sufficiently improved. If the proportion of Ta


2


O


5


exceeds 9 wt %, the crystallization of the glass becomes unstable and the precipitated crystalline phase cannot be controlled, so that desired characteristics are less likely to be obtained.




Besides the above-mentioned basic components, TiO


2


as a fluxing agent can been added. By adding TiO


2


serving as a fluxing agent has been added, production stability has been improved. If the proportion of TiO


2


is lower than 0.1 wt %, the melting properties deteriorate and the crystal is less likely to grow. If the proportion of TiO


2


exceeds 12 wt %, the crystallization is promoted rapidly so that the control of the crystallized state becomes difficult, the precipitated crystal is increased in size, and the crystalline phase becomes non-uniform. This prevents the obtention of an extremely small and uniform crystal structure and the obtention of a flat, smooth surface by polishing, which is required of the glass substrate as a disk substrate. Moreover, devitrification is more likely to occur during melt molding, which lowers productivity.




Besides the above-mentioned basic components, ZrO


2


as a glass modifying oxide can been added. By adding ZrO


2


serving as a glass modifying oxide, a glass nucleating agent functions effectively. If the proportion of ZrO


2


is lower than 0.1 wt %, satisfactory crystal nuclei are less likely to be formed so that crystal grains are increased in size and the crystal is precipitated non-uniformly. This prevents the obtention of an extremely small and uniform crystal structure and the obtention of a flat, smooth surface by polishing, which is required of the glass substrate as a disk substrate. In addition, the chemical durability and the migration resistance are reduced. This may affect a magnetic film and degrades stability in the polishing to cleaning steps. If the proportion of ZrO


2


exceeds 12 wt %, the melting temperature is increased and devitrification is more likely to occur during melt molding, which lowers productivity. Moreover, the precipitated crystalline phase changes so that desired characteristics are less likely to be obtained.




Besides the above-mentioned basic components, B


2


O


3


as a former can been added. By adding B


2


O


3


serving as a former, the phase splitting of the glass is promoted and the precipitation and growth of the crystal are promoted. If the proportion of B


2


O


3


is lower than 0.1 wt %, the melting properties are not improved sufficiently. If the proportion of B


2


O


3


exceeds 5 wt %, devitrification is more likely to occur and molding becomes difficult, while the crystal is increased in size, so that an extremely small crystal is no more obtained.




Besides the above-mentioned basic components, Y


2


O


3


as a fluxing agent can been added. By adding Y


2


O


3


serving as a fluxing agent, the rigidity has been improved. If the proportion of Y


2


O


3


is lower than 0.1 wt %, however, the rigidity is not improved sufficiently. If the proportion of Y


2


O


3


exceeds 9 wt %, the precipitation of the crystal is suppressed and a sufficient degree of crystallization is not achieved, so that desired characteristics are not achieved.




Besides the above-mentioned basic components, K


2


O as a fluxing agent can been added. By adding K


2


O serving as a fluxing agent, production stability has been improved. If the proportion of K


2


O is lower than 0.1 wt %, however, the melting properties are not improved sufficiently. If the proportion of K


2


O exceeds 5 wt %, the glass becomes stable and the crystallization is suppressed, while the chemical durability is reduced. This may affect a magnetic film and degrades stability in the polishing to cleaning steps.




Besides the above-mentioned basic components, Sb


2


O


3


as a clarifier can been added. By adding Sb


2


O


3


serving as a clarifier, production stability has been improved. If the proportion of Sb


2


O


3


is lower than 0.1 wt %, however, a sufficient clarifying effect can not be achieved and productivity is lowered. If the proportion of Sb


2


O


3


exceeds 5 wt %, the crystallization of the glass becomes unstable and the precipitated crystalline phase cannot be controlled so that required characteristics are less likely to be obtained.




Besides the above-mentioned basic components, ZnO as a fluxing agent can been added. By adding ZnO serving as a fluxing agent, it helps uniform precipitation of the crystal. If the proportion of ZnO is lower than 0.1 wt %, however, the uniformity of the crystal is not sufficiently improved. If the proportion of ZnO exceeds 5 wt %, the glass becomes stable and the crystallization is suppressed, so that required strength is less likely to be achieved.




Besides the above-mentioned basic components, La


2


O


3


as a fluxing agent can been added. By adding La


2


O


3


serving as a fluxing agent, the precipitation of the crystal is suppressed. If the proportion of La


2


O


3


is lower than 0.1 wt %, however, the rigidity is not improved sufficiently. If the proportion of La


2


O


3


exceeds 5 wt %, the crystallization of the glass becomes unstable and the precipitated crystalline phase cannot be controlled, so that required properties are less likely to be obtained.




Next, a description will be given to a fabrication method. Raw materials containing the main components of the glass substrate to be finally produced arc sufficiently mixed in specified proportions. The resulting mixture is placed in a platinum crucible and caused to melt. The molten product is cast in a metal mold so that it is formed into a rough configuration and annealed to a room temperature. The molten product is then held at a specified temperature for a specified time during a primary treatment (heat treatment) such that crystal nuclei are formed. Subsequently, the molded mixture is held at a specified temperature for a specified time during a secondary heat treatment such that crystal nuclei grow. By slowly cooling the molded mixture, an objective crystallized glass is obtained.











NUMERICAL EXAMPLES




A description will be given next to specific numerical examples incorporating the embodiments. In TABLE 1 are shown: the proportions(unit: wt %) of materials composing the glasses of the first to fifth examples; the melting temperatures and times; the primary heat treatment temperatures and times; the secondary heat treatment temperatures and times; the main precipitated crystalline phases; the subordinate precipitated crystalline phases; the mean diameters of the crystal grains; the specific gravity s: the Young's moduli; and the specific moduli. Likewise, tshe glasses of the sixth to tenth examples arc shown in TABLE 2. Likewise, the glasses of the eleventh to fifteenth examples are shown in TABLE 3. Likewise, the glasses of the sixteenth to twentieth examples are shown in TABLE 4.


















TABLE 1











Exam-




Exam-




Exam-




Exam-




Exam-







ple 1




ple 2




ple 3




ple 4




ple 5





























SiO


2






51.6




54.7




54.2




50.0




52.0






Al


2


O


3






17.0




13.7




18.0




24.2




26.5






MgO




16.4




12.8




23.8




20.1




17.1






P


2


O


5






1.7




1.6




0.2




1.2






Nb


2


O


5










2.0






Ta


2


O


5








Li


2


O




2.9




4.1




3.8




4.5




2.4






TiO


2






8.2




7.4






ZrO


2








B


2


O


3








Y


2


O


3







3.7






K


2


O




1.8




1.6






Sb


2


O


3






0.5




0.4






ZnO






La


2


O


3








Melting




1300




1250




1350




1350




1350






Temperature






(° C.)






Melting Time




5.00




5.00




5.50




5.50




5.50






(hours)






Primary




640




640




670




670




670






Treatment






Temperature






(° C.)






Primary




5.00




5.00




5.50




5.50




5.50






Treatment Time






(hours)






Secondary




710




700




730




730




730






Treatment






Temperature






(° C.)






Secondary




4.50




4.50




5.00




5.00




5.00






Treatment Time






(hours)






Main




Mag-




Mag-




Mag-




Mag-




Mag-






Crystalline




nesium




nesium




nesium




nesium




nesium






Phase




alumina




alumina




alumina




alumina




alumina







silicate




silicate




silicate




silicate




silicate






Sub




Rutil




Rutil






Crystalline






Phase






Diameter of




0.05




0.05




0.05




0.05




0.05






Crystal






Specific




2.64




2.67




2.68




2.62




2.74






Gravity (g/cm


3


)






Yong's Modulus




96.04




94.21




99.04




94.04




99.04






Elastic




36.32




35.35




36.90




35.84




36.09






Modulus Ratio




























TABLE 2











Exam-




Exam-




Exam-




Exam-




Exam-







ple 6




ple 7




ple 8




ple 9




ple 10





























SiO


2






48.0




54.0




52.2




52.2




48.0






Al


2


O


3






19.8




16.8




21.6




28.2




18.5






MgO




23.0




24.0




14.8




17.2




27.5






P


2


O


5








Nb


2


O


5






4.0






Ta


2


O


5







2.2




5.2






Li


2


O




5.2




3.0




6.2




2.4




6.0






TiO


2








ZrO


2








B


2


O


3








Y


2


O


3








K


2


O






Sb


2


O


3








ZnO






La


2


O


3








Melting




1350




1350




1350




1350




1350






Temperature






(° C.)






Melting Time




5.50




5.50




5.50




5.50




5.50






(hours)






Primary




670




670




670




670




670






Treatment






Temperature






(° C.)






Primary




5.50




5.50




5.50




5.50




5.50






Treatment Time






(hours)






Secondary




730




730




730




730




730






Treatment






Temperature






(° C.)






Secondary




5.00




5.00




5.00




5.00




5.00






Treatment Time






(hours)






Main




Mag-




Mag-




Mag-




Mag-




Mag-






Crystalline




nesium




nesium




nesium




nesium




nesium






Phase




alumina




alumina




alumina




alumina




alumina







silicate




silicate




silicate




silicate




silicate






Sub






Crystalline






Phase






Diameter of




0.05




0.05




0.05




0.05




0.05






Crystal






Specific




2.76




2.79




2.76




2.68




2.72






Gravity (g/cm


2


)






Yong's Modulus




101.04




101.04




104.04




108.04




106.04






Elastic




36.56




36.16




37.64




40.25




38.93






Modulus Ratio




























TABLE 3











Exam-




Exam-




Exam-




Exam-




Exam-







ple 11




ple 12




ple 13




ple 14




ple 15





























SiO


2






49.5




48.5




53.2




50.5




53.2






Al


2


O


3






20.0




19.5




21.0




23.6




22.2






MgO




22.0




17.5




22.5




14.5




20.6






P


2


O


5








Nb


2


O


5








Ta


2


O


5








Li


2


O




4.5




5.5




2.8




7.2




3.5






TiO


2






4.0




9.0






ZrO


2








0.5




4.2






B


2


O


3










0.5






Y


2


O


3








K


2


O






Sb


2


O


3








ZnO






La


2


O


3








Melting




1350




1350




1350




1350




1300






Temperature






(° C.)






Melting Time




5.50




5.50




5.50




5.50




5.00






(hours)






Primary




670




670




670




670




640






Treatment






Temperature






(° C.)






Primary




5.50




5.50




5.50




5.50




5.00






Treatment Time






(hours)






Secondary




730




730




730




730




710






Treatment






Temperature






(° C.)






Secondary




5.00




5.00




5.00




5.00




4.50






Treatment Time






(hours)






Main




Mag-




Mag-




Mag-




Mag-




Mag-






Crystalline




nesium




nesium




nesium




nesium




nesium






Phase




alumina




alumina




alumina




alumina




alumina







silicate




silicate




silicate




silicate




silicate






Sub




Rutil




Rutil






Crystalline






Phase






Diameter of




0.05




0.05




0.05




0.05




0.05






Crystal






Specific




2.96




2.99




2.89




2.92




2.64






Gravity (g/cm


3


)






Yong's Modulus




109.24




108.24




104.04




104.24




96.04






Elastic




36.86




36.15




35.95




35.65




36.32






Modulus Ratio




























TABLE 4











Exam-




Exam-




Exam-




Exam-




Exam-







ple 16




ple 17




ple 18




ple 19




ple 20





























SiO


2






54.8




52.0




50.0




48.2




48.5






Al


2


O


3






19.8




27.3




12.0




25.9




14.0






MgO




16.0




16.2




26.7




19.8




23.0






P


2


O


5








Nb


2


O


5








Ta


2


O


5








Li


2


O




6.2




2.7




7.1




2.4




4.0






TiO


2








ZrO


2








B


2


O


3






3.2






Y


2


O


3







1.8




4.2






K


2


O







1.0




4.0






Sb


2


O


3









0.2




2.0






ZnO







0.5




2.0






La


2


O


3









2.0




2.5






Melting




1300




1350




1350




1300




1300






Temperature






(° C.)






Melting Time




5.00




5.50




5.50




5.50




5.50






(hours)






Primary




640




670




670




640




640






Treatment






Temperature






(° C.)






Primary




5.00




5.50




5.50




5.50




5.50






Treatment Time






(hours)






Secondary




710




730




730




710




710






Treatment






Temperature






(° C.)






Secondary




4.50




5.00




5.00




5.00




5.00






Treatment Time






(hours)






Main




Mag-




Mag-




Mag-




Mag-




Mag-






Crystalline




nesium




nesium




nesium




nesium




nesium






Phase




alumina




alumina




alumina




alumina




alumina







silicate




silicate




silicate




silicate




silicate






Sub






Crystalline






Phase






Diameter of




0.05




0.05




0.05




0.05




0.05






Crystal






Specific




2.64




2.92




2.96




2.96




2.99






Gravity (g/cm


3


)






Yong's




96.04




110.04




112.04




103.04




106.04






Module






Elastic Module




36.32




37.63




37.80




34.76




35.42






Ratio














Although the present invention has been fully described by way of example with reference to the accompanying drawings, it is to be understood that various changes and modifications will be apparent to those skilled in the art. Therefore, unless otherwise such changes and modification depart from the scope of the present invention, they should be construed as being included therein.



Claims
  • 1. A glass ceramics composition for recording disk substrate consisting essentially, expressed in terms of weight percent on an oxide basis, offrom 48 to 54.8 wt % of SiO2, from 10 to 30 wt % of Al2O3, from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O, wherein the glass ceramics composition includes a main crystalline phase of magnesium aluminum silicate.
  • 2. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of P2O5.
  • 3. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 9 wt % of Nb2O5.
  • 4. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 9 wt % of Ta2O5.
  • 5. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 12 wt % of TiO2.
  • 6. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 12 wt % of ZrO2.
  • 7. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of B2O3.
  • 8. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of K2O.
  • 9. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of Sb2O3.
  • 10. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of ZnO.
  • 11. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of La2O3.
  • 12. A glass ceramic recording disk substrate made of glass ceramic, wherein the glass ceramic is prepared from the composition which consists essentially, expressed in terms of weight percent on an oxide basis, offrom 48 to 54.8 wt % of SiO2 from 10 to 30 wt % of Al2O3, from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O, wherein the glass ceramics composition includes a main crystalline phase of magnesium aluminum silicate.
  • 13. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of P2O5.
  • 14. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 9 wt % of Nb2O5.
  • 15. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 9 wt % of Ta2O5.
  • 16. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 12 wt % of TiO2.
  • 17. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 12 wt % of ZrO2.
  • 18. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of B2O3.
  • 19. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of K2O.
  • 20. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of Sb2O3.
  • 21. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, offrom 0.1 to 5 wt % of ZnO.
  • 22. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, of from 0.1 to 5 wt % of La2O3.
  • 23. A glass ceramics composition as claimed in claim 1, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, of from 0.1 to 9 wt % Y2O3.
  • 24. A recording disk substrate as claimed in claim 12, wherein said glass ceramic composition further consists essentially, expressed in terms of weight percent on an oxide basis, of from 0.1 to 9 wt % of Y2O3.
Priority Claims (1)
Number Date Country Kind
11-200442 Jul 1999 JP
RELATED APPLICATION

This application is based on application No. 11-200442 filed in Japan, the content of which is hereby incorporated by reference.

US Referenced Citations (30)
Number Name Date Kind
4042362 MacDowell et al. Aug 1977 A
4304603 Grossman et al. Dec 1981 A
4374931 Courbin et al. Feb 1983 A
4714687 Holleran et al. Dec 1987 A
5219799 Beall et al. Jun 1993 A
5250474 Siebers Oct 1993 A
5352638 Beall et al. Oct 1994 A
5391522 Goto et al. Feb 1995 A
5476821 Beall et al. Dec 1995 A
5489558 Moffatt et al. Feb 1996 A
5491116 Beall et al. Feb 1996 A
5498580 Yamada et al. Mar 1996 A
5532194 Kawashima et al. Jul 1996 A
5567217 Goto et al. Oct 1996 A
5580363 Goto et al. Dec 1996 A
5626935 Goto et al. May 1997 A
5676721 Fredholm et al. Oct 1997 A
5726108 Taguchi et al. Mar 1998 A
5786286 Kohli Jul 1998 A
5866489 Yamaguchi Feb 1999 A
5872069 Abe Feb 1999 A
5910459 Beall et al. Jun 1999 A
5958807 Kumar et al. Sep 1999 A
5968219 Gille et al. Oct 1999 A
6017642 Kumar et al. Jan 2000 A
6124223 Beall et al. Sep 2000 A
6182472 Fredholm et al. Feb 2001 B1
6214429 Zou et al. Apr 2001 B1
6245411 Goto et al. Jun 2001 B1
6294490 Zou et al. Sep 2001 B1
Foreign Referenced Citations (11)
Number Date Country
61-72679 Sep 1984 JP
9-208260 Aug 1997 JP
9-314458 Dec 1997 JP
10-208226 Aug 1998 JP
10-226532 Aug 1998 JP
11-16142 Jan 1999 JP
11-16143 Jan 1999 JP
11-322362 Nov 1999 JP
11-322363 Nov 1999 JP
11-343143 Dec 1999 JP
9822405 May 1998 WO