GLASS FOR MAGNETIC RECORDING MEDIA SUBSTRATES, MAGNETIC RECORDING MEDIA SUBSTRATES, MAGNETIC RECORDING MEDIA AND METHOD FOR PREPARATION THEREOF

Information

  • Patent Application
  • 20150262605
  • Publication Number
    20150262605
  • Date Filed
    March 23, 2015
    9 years ago
  • Date Published
    September 17, 2015
    9 years ago
Abstract
The provided are a glass for a magnetic recording medium substrate permitting the realization of a magnetic recording medium substrate affording good chemical durability and having an extremely flat surface, a magnetic recording medium substrate comprised of this glass, a magnetic recording medium equipped with this substrate, and methods of manufacturing the same. Glasses for a magnetic recording medium substrate are, glass I comprised of an oxide glass, comprising, denoted as mass percentages: Si 20 to 40 percent,Al 0.1 to 10 percent,Li 0.1 to 5 percent,Na 0.1 to 10 percent,K 0 to 5 percent(where the total content of Li, Na, and K is 15 percent or less),Sn 0.005 to 0.6 percent, andCe 0 to 1.2 percent;the Sb content is 0 to 0.1 percent; andnot comprising As or F; glass II comprised of oxide glass, comprising, as converted based on the oxide, denoted as molar percentages: SiO2 60 to 75 percent,Al2O3 1 to 15 percent,Li2O 0.1 to 20 percent,Na2O 0.1 to 15 percent, andK2O 0 to 5 percent(where the total content of Li2O, Na2O, and K2O is 25 percent or lower);based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide are added;the content of Sb oxide is 0 to 0.1 mass percent; andnot comprising As or F; and glass III comprised of oxide glass, comprising, converted based on the oxide, denoted as molar percentages: SiO2 60 to 75 percent,Al2O3 1 to 15 percent,Li2O 0.1 to 20 percent,Na2O 0.1 to 15 percent,K2O 0 to 5 percent(where the total content of Li2O, Na2O, and K2O is 25 percent or less);by comprising a 0.1 to 3.5 mass percent of total content of Sn oxide and Ce oxide, based on the total amount of the glass components;the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) is 0.01 to 0.99;the Sb oxide content is 0 to 0.1 percent; andcomprising no As or F.
Description
PRIOR ART

The present invention relates to a glass employed in the substrates of magnetic recording media such as hard disks, a magnetic recording medium substrate comprised of this glass, and a magnetic recording medium equipped with this substrate. The present invention further relates to a method for manufacturing the magnetic recording medium substrate, and a method for manufacturing the magnetic recording medium.


BACKGROUND ART

With developments in electronics technology, particularly information-related technology typified by computers, demand for information-recording media such as magnetic disks, optical disks, and magnetooptical disks has increased quickly. The main component elements of magnetic storage devices such as computers are a magnetic recording medium and a magnetic head for magnetic recording and reproduction. Flexible disks and hard disks are known as magnetic recording media. Among these, there exist substrate materials in the form of aluminum substrates, glass substrates, ceramic substrates, carbon substrates, and the like for hard disks (magnetic disks). In practical terms, aluminum substrates and glass substrates are primarily employed, depending on size and application. However, with the reduction in size of the hard disk drives employed in notebook computers and the increased density of magnetic recording, the requirements imposed on disk substrate surface flatness and thickness reduction have become quite stringent. Thus, aluminum substrates, which afford poor processability, strength, and rigidity, are inadequate. Accordingly, glass substrates for magnetic disks affording high strength, high rigidity, high impact resistance, and high surface flatness have made an appearance.


In recent years, vertical magnetic recording methods have been employed in an attempt to achieve higher recording densities in information-recording media (for example, high recording densities of 100 Gbit/inch2 or greater). The use of vertical magnetic recording methods permits a marked increase in recording density. Additionally, achieving a high recording density requires greatly reducing the distance (referred to as the “flying height” in magnetic recording media) between the heads for reading and writing data (such as magnetic heads) and the medium surface, to 8 nm or less. However, when the substrate surface is not smooth, irregularities on the substrate surface are reflected on the medium surface, precluding a reduction in the distance between the heads and the recording medium, and hindering improvement in linear recording density. Thus, achieving high recording density through the use of a vertical magnetic recording method requires a glass substrate for use in an information-recording medium with a markedly better degree of flatness than in the past.


Since adhesion of foreign matter to the glass substrate of an information-recording medium is unacceptable, adequate cleaning must be conducted. Cleaning agents such as acids and alkalis are employed in cleaning. However, when the chemical durability (acid and alkali resistance) of the glass constituting the substrate is inadequate, the manufacturing process ends up producing surface roughness, even when the substrate surface is finished for flatness. Even slight surface roughness makes it difficult to achieve a medium substrate with the level of flatness required by vertical recording methods. Thus, increasing the linear density of an information-recording medium requires a substrate material having good chemical durability.


[Patent Document 1] International Patent Application Publication No. 2007-142324 (WO 2007/142324) (the entire contents of which are hereby incorporated by reference).


DISCLOSURE OF THE INVENTION
Problem to be Solved by the Invention

With the increasing recording density of magnetic recording media, a substrate glass having extremely few bubbles in addition to chemical durability is required. This goes beyond even the level of residual bubbles that is required of optical glass.


When even extremely small bubbles remain in the glass, minute voids corresponding to bubbles appear in the substrate surface in the course of polishing the glass and shaping the substrate surface, forming localized pits and reducing the flatness of the substrate surface.


In the glass disclosed in Patent Document 1, to increase chemical durability and achieve the properties required of a glass for use in a magnetic recording medium substrate, the content of SiO2 and Al2O3 among the glass components is increased. To the extent that chemical durability does not decrease, Li2O and Na2O are incorporated, having the effect of maintaining melting properties, the coefficient of thermal expansion, and the like. However, in such glass, problems occur because, despite a lower glass melting temperature than in nonalkali glass, the melting temperature increases in alkali-containing glasses for magnetic recording medium substrates, making it difficult to effectively remove bubbles, due to the relation between the glass temperature and viscosity during the clarification step with Sb2O3, which has conventionally been employed as a clarifying agent.


The present invention, devised to solve such problems, has for its object to provide: a glass for a magnetic recording medium substrate permitting the realization of a magnetic recording medium substrate affording good chemical durability and having an extremely flat surface, a magnetic recording medium substrate comprised of this glass, a magnetic recording medium equipped with this substrate, and methods of manufacturing the same.


Means of Solving the Problem

The present invention, which solves the above-stated problems, is as follows:


[1]


A glass for a magnetic recording medium substrate, comprised of an oxide glass, characterized:


by comprising, denoted as mass percentages:

    • Si 20 to 40 percent,
    • Al 0.1 to 10 percent,
    • Li 0.1 to 5 percent,
    • Na 0.1 to 10 percent,
    • K 0 to 5 percent
    • (where the total content of Li, Na, and K is 15 percent or less),
    • Sn 0.005 to 0.6 percent, and
    • Ce 0 to 1.2 percent;


in that the Sb content is 0 to 0.1 percent; and


by not comprising As or F.


[2]


The glass for a magnetic recording medium substrate according to [1], further characterized in that the ratio of the Ce content to the Sn content, Ce/Sn, falls within a range of 0 to 2.1.


[3]


The glass for a magnetic recording medium substrate according to [1], further characterized in that the ratio of the Ce content to the Sn content, Ce/Sn, falls within a range of 0.02 to 1.3.


[4]


The glass for a magnetic recording medium substrate according to any one of [1] to [3], further characterized by not comprising Sb.


[5]


The glass for a magnetic recording medium substrate according to any one of [1] to [4], comprising, denoted as mass percentages:


Mg 0 to 5 percent,


Ca 0 to 5 percent,


Sr 0 to 2 percent, and


Ba 0 to 2 percent.


[6]


The glass for a magnetic recording medium substrate according to any one of [1] to [5], further characterized by comprising 0.1 to 10 mass percent of Zr, Ti, La, Nb, Ta, and Hf in total.


[7]


The glass for a magnetic recording medium substrate according to any one of [1] to [6], characterized by a total content of Mg, Ca, Sr, and Ba of 0 to 10 percent.


[8]


The glass for a magnetic recording medium substrate according to any one of [1] to [7], characterized in that the total content of Si and Al is 30 mass percent or greater, and by having a viscous property whereby the viscosity at 1,400° C. is 103 dPa·s or lower.


[9]


The glass for a magnetic recording medium substrate according to any one of [1] to [8], comprising, denoted as mass percentages:


Si 28 to 34 percent,


Al 6 to 10 percent


(where the total content of Si and Al is 37 percent or greater),


Li 0.1 to 3 percent,


Na 5 to 10 percent,


K 0.1 to 1 percent


(where the total content of Li, Na, and K is 7 to 13 percent),


Mg 0.1 to 2 percent,


Ca 0.1 to 2 percent,


Sr and Ba in total 0 to 1 percent,


Zr 1 to 5 percent,


B 0 to 1 percent, and


Zn 0 to 1 percent.


[10]


The glass for a magnetic recording medium substrate according to any one of [1] to [8], comprising, denoted as mass percentages:


Si 28 to 34 percent,


Al 6 to 10 percent


(where the total content of Si and Al is 37 percent or greater),


Li 1 to 5 percent,


Na 1 to 10 percent,


K 0.1 to 3 percent


(where the total content of Li, Na, and K is 5 to 11 percent),


Mg 0 to 2 percent,


Ca 0 to 2 percent,


Sr 0 to 1 percent,


Ba 0 to 1 percent,


Zr, Ti, La, Nb, Ta, and Hf in total 1 to 10 percent,


B 0 to 1 percent,


Zn 0 to 1 percent, and


P 0 to 1 percent.


[11]


A method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by:


preparing a glass starting material to which Sn, and optionally Ce, are added, comprising, denoted as mass percentages:


Si 20 to 40 percent,


Al 0.1 to 10 percent,


Li 0.1 to 5 percent,


Na 0.1 to 10 percent,


K 0 to 5 percent


(wherein the total content of Li, Na, and K is 15 percent or lower),


Sn 0.005 to 0.6 percent,


Ce 0 to 1.2 percent, and


so as to permit obtaining a glass comprising 0 to 0.1 percent of Sb and no As or F;


melting the glass starting material;


clarifying the resulting glass melt; and


then molding the resulting glass melt.


[12]


The method for manufacturing a glass for a magnetic recording medium substrate according to [11], further characterized by:


preparing a glass starting material comprising a ratio of Ce content to Sn content, Ce/Sn, falling within a range of 0.02 to 1.3;


maintaining the resulting glass melt at 1,400 to 1,600° C.;


decreasing the temperature;


maintaining the temperature at 1,200 to 1,400° C.; and


conducting molding.


[13]


The method for manufacturing a glass for a magnetic recording medium substrate according to [11] or [12], wherein the viscosity of the glass melt at 1,400° C. is 103 dPa·s or lower.


[14]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [11] to [13], wherein the quantities of Sn and Ce added are established so as to achieve a density of residual bubbles in the glass of 60 bubbles/kg or lower.


[15]


A glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, as converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or lower);


in that, based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide are added;


in that the content of Sb oxide is 0 to 0.1 mass percent; and


by not comprising As or F.


[16]


The glass for a magnetic recording medium substrate according to [15], further characterized in that the ratio of the content of Ce oxide to the content of Sn oxide (Ce oxide/Sn oxide) as denoted by mass percentages falls within a range of 0 to 2.0.


[17]


The glass for a magnetic recording medium substrate according to [15], further characterized in that the ratio of the content of Ce oxide to the content of Sn oxide (Ce oxide/Sn oxide) as denoted by mass percentages falls within a range of 0.02 to 1.2.


[18]


The glass for a magnetic recording medium substrate according to any one of [15] to [17], further characterized by not comprising Sb.


[19]


The glass for a magnetic recording medium substrate according to any one of [15] to [18], comprising, denoted as molar percentages:


MgO 0 to 10 percent,


CaO 0 to 10 percent,


SrO 0 to 5 percent, and


BaO 0 to 5 percent.


[20]


The glass for a magnetic recording medium substrate according to any one of [15] to [19], characterized by comprising 0.1 to 5 molar percent of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total.


[21]


The glass for a magnetic recording medium substrate according to any one of [15] to [20], characterized by comprising a total content of 0.1 to 10 molar percent of MgO, CaO, SrO, and BaO.


[22]


The glass for a magnetic recording medium substrate according to any one of [15] to [21], characterized in that the total content of SiO2 and Al2O3 is 65 molar percent or greater, and by having a viscous property such that the viscosity at 1,400° C. is 103 dPa·s or lower.


[23]


The glass for a magnetic recording medium substrate according to any one of [15] to [22], comprising, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 7 to 12 percent


(where the total content of SiO2 and Al2O3 is 75 percent or greater),


Li2O 5 to 10 percent,


Na2O 8 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 15 to 22 percent),


MgO 0.1 to 5 percent,


CaO 0.1 to 5 percent,


SrO and BaO in total 0 to 1 percent,


ZrO2 0.1 to 2 percent,


B2O3 0 to 1 percent, and


ZnO 0 to 1 percent.


[24]


The glass for a magnetic recording medium substrate according to any one of [15] to [22], comprising, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 5 to 12 percent,


Li2O 5 to 20 percent,


Na2O 1 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 18 to 22 percent),


MgO and CaO in total 0 to 5 percent,


SrO and BaO in total 0 to 5 percent,


ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total 0.1 to 5 percent,


B2O3 0 to 3 percent,


ZnO 0 to 1 percent, and


P2O5 0 to 0.5 percent.


[25]


The glass for a magnetic recording medium substrate according to any one of [15] to [24], characterized by exhibiting an acid resistant property such that the etching rate when immersed in a 0.5 volume percent hydrogenfluosilicic acid aqueous solution maintained at 50° C. is 3.0 nm/minute or less and an alkali resistant property such that the etching rate when immersed in a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. is 0.1 nm/minute or less.


[26]


A method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by:


preparing a glass starting material to which Sn, and optionally Ce, are added, comprising, as converted based on the oxides, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(wherein the total content of Li2O, Na2O, and K2O is 25 percent or lower);


so as to permit obtaining a glass comprising 0 to 0.1 percent of Sb, no As or F, and, based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide;


melting the glass starting material;

    • clarifying the resulting glass melt; and


molding the resulting glass melt.


[27]


The method for manufacturing a glass for a magnetic recording medium substrate according to [26], further comprising:


mixing the glass starting material so that the ratio of the content of Ce oxide to the content of Sn oxide (Ce oxide/Sn oxide) denoted as a mass percentage falls within a range of 0.02 to 1.2,


melting the starting material,


maintaining the resulting glass melt at 1,400 to 1,600° C.,


reducing the temperature,


maintaining the temperature at 1,200 to 1,400° C., and


molding the glass melt.


[28]


The method for manufacturing a glass for a magnetic recording medium substrate according to [26] or [27], wherein the viscosity of the glass melt at 1,400° C. is 103 dPa·s or lower.


[29]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [26] to [28], wherein the quantities of Sn and Ce added are established to achieve a density of residual bubbles in the glass of 60 bubbles/kg or lower.


[30]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [11] to [14] and [26] to [29], wherein the glass melt is made to flow out to obtain glass melt gobs, and the glass gobs are press molded.


[31]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [11] to [14] and [26] to [29], wherein the glass melt is molded into a sheet of glass by the float method.


[32]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [11] to [14] and [26] to [29], wherein the glass melt is molded into a sheet of glass by overflow down draw molding.


[33]


The glass for a magnetic recording medium substrate according to any one of [1] to [10] and [15] to [25] that has been subjected to a chemical strengthening treatment.


[34]


A magnetic recording medium substrate comprised of the glass described in any one of [1] to [10], [15] to [25], and [33].


[35]


The magnetic recording medium substrate according to claim 34, wherein roughness Ra of the main surface is less than 0.25 nm.


[36]


The magnetic recording medium substrate according to claim 34 or [35], characterized by a bending strength of 10 kg or greater.


[37]


The magnetic recording medium substrate of any one of claims 34 to [36], having a disklike shape and a thickness of 1 mm or less.


[38]


A method for manufacturing a magnetic recording medium substrate, comprising the steps of:


mirror-surface polishing the glass described in any one of [1] to [10], [15] to [25], and [33], and


following mirror-surface polishing, subjecting the glass to a cleaning step in which the glass is cleaned with an acid and cleaned with an alkali.


[39]


The method for manufacturing a magnetic recording medium substrate according to [38], further comprising a step of subjecting the glass to a chemical strengthening treatment between the mirror-surface polishing step and the cleaning step.


[40]


A method for manufacturing a magnetic recording medium substrate, comprising the steps of:


manufacturing a glass by the method described in any one of [11] to [14] and [26] to [32],


mirror-surface polishing the glass, and


following mirror surface polishing, subjecting the glass to a cleaning step in which the glass is cleaned with an acid and cleaned with an alkali.


[41]


The method for manufacturing a magnetic recording medium substrate of [40], additionally comprising a step of subjecting the glass to a chemical strengthening treatment between the mirror-surface polishing step and the cleaning step. [42]


A magnetic recording medium having an information recording layer on the magnetic recording medium substrate described in any one of claims 34 to [37].


[43]


The magnetic recording medium according to [42], suited to a vertical magnetic recording method.


[44]


A method for manufacturing a magnetic recording medium, comprising:


preparing a magnetic recording medium substrate by the method described in any one of [38] to [41] and


forming an information recording layer on the substrate.


[45]


A glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent,


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or less);


by comprising a 0.1 to 3.5 mass percent of total content of Sn oxide and Ce oxide, based on the total amount of the glass components;


in that the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) is 0.01 to 0.99;


in that the Sb oxide content is 0 to 0.1 percent; and


by comprising no As or F.


[46]


The glass for a magnetic recording medium substrate according to [45], further characterized in that the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) is ⅓ or greater.


[47]


The glass for a magnetic recording medium substrate according to [45], further characterized in that the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) falls within a range of 0.45 to 0.98.


[48]


The glass for a magnetic recording medium substrate according to any one of [45] to [47], further characterized by not containing Sb.


[49]


The glass for a magnetic recording medium substrate according to any one of [45] to [48], comprising, denoted as molar percentages:


MgO 0 to 10 percent,


CaO 0 to 10 percent,


SrO 0 to 5 percent,


BaO 0 to 5 percent,


B2O3 0 to 3 percent,


P2O5 0 to 1 percent, and


ZnO 0 to 3 percent.


[50]


The glass for a magnetic recording medium substrate according to any one of [45] to [49], further characterized by comprising a total content of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 of 0.1 to 5 molar percent.


[51]


The glass for a magnetic recording medium substrate according to any one of [45] to [50], further characterized by comprising a total content of MgO, CaO, SrO, and BaO of 0.1 to 10 molar percent.


[52]


The glass for a magnetic recording medium substrate of any one of [45] to [51], further characterized in that the total content of SiO2 and Al2O3 is 65 molar percent or greater and by having a viscous property such that the viscosity at 1,400° C. is 103 dPa·s or lower.


[53]


The glass for a magnetic recording medium substrate of any one of [45] to [52], comprising, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 7 to 12 percent


(where the total content of SiO2 and Al2O3 is 75 percent or greater),


Li2O 5 to 10 percent,


Na2O 8 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 15 to 22 percent),


MgO 0.1 to 5 percent,


CaO 0.1 to 5 percent,


SrO and BaO in total 0 to 1 percent,


ZrO2 0.1 to 2 percent,


B2O3 0 to 1 percent, and


ZnO 0 to 1 percent.


[54]


The glass for a magnetic recording medium substrate of any one of [45] to [52], comprising, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 5 to 12 percent,


Li2O 5 to 20 percent,


Na2O 1 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 18 to 22 percent),


MgO and CaO in total 0 to 5 percent,


SrO and BaO in total 0 to 5 percent,


ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total 0.1 to 5 percent,


B2O3 0 to 3 percent,


ZnO 0 to 1 percent, and


P2O5 0 to 0.5 percent.


[55]


The glass for a magnetic recording medium substrate according to any one of [45] to [54], characterized by exhibiting an acid resistant property such that the etching rate when immersed in a 0.5 volume percent hydrogenfluosilicic acid aqueous solution maintained at 50° C. is 3.0 nm/minute or less and an alkali resistant property such that the etching rate when immersed in a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. is 0.1 nm/minute or less.


[56]


A method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by:


preparing a glass starting material to which Sn and Ce are added, comprising, as converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(wherein the total content of Li2O, Na2O, and K2O is 25 percent or lower);


and, so as to permit obtaining a glass containing a total quantity of Sn oxide and Ce oxide of 0.1 to 3.5 mass percent based on the total amount of the glass components, wherein the ratio of the content of Sn oxide to the total content Sn oxide and Ce oxide (content of Sn oxide/(content of Sn oxide+content of Ce oxide)) is 0.01 to 0.99, having an Sb oxide content of 0 to 0.1 percent, and comprising no As or F;


melting the glass starting material;


clarifying the resulting glass melt; and


molding the resulting glass melt.


[57]


The method for manufacturing a glass for a magnetic recording medium substrate according to [56] to [58], wherein the glass melt obtained by preparing and melting the glass starting material is maintained at 1,400 to 1,600° C., the temperature is decreased, the glass melt is maintained at 1,200 to 1,400° C., and the glass melt is molded.


[58]


The method for manufacturing a glass for a magnetic recording medium substrate according to [56] or [57], wherein the viscosity of the glass melt at 1,400° C. is 103 dPa·s or lower.


[59]


The method for manufacturing a glass for a magnetic recording medium substrate of any one of [56] to [59], wherein the quantities of Sn and Ce added are established so as to achieve a density of residual bubbles in the glass of 60 bubbles/kg or less.


[60]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [56] to [59], wherein the glass melt is made to flow out to obtain glass melt gobs and the glass gobs are press molded.


[61]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [56] to [59], wherein the glass melt is molded into a sheet of glass by the float method.


[62]


The method for manufacturing a glass for a magnetic recording medium substrate according to any one of [56] to [59], wherein the glass melt is molded into a sheet of glass by overflow down draw molding.


[63]


The glass for a magnetic recording medium substrate of any one of [45] to [55] that has been subjected to a chemical strengthening treatment.


[64]


A magnetic recording medium substrate being composed of the glass described in any one of [45] to [55] and [61].


[65]


The magnetic recording medium substrate according to [64], wherein roughness Ra of the main surface is less than 0.25 nm.


[66]


The magnetic recording medium substrate according to [64] or [65], further characterized by exhibiting a bending strength of 10 kg or greater.


[67]


The magnetic recording medium substrate described in any one of [64] to [66], having a disklike shape and a thickness of 1 mm or less.


[68]


A method for manufacturing a magnetic recording medium substrate, comprising:


a step of mirror-surface polishing the glass described in any one of [45] to [55] and [61]; and


following mirror-surface polishing, a cleaning step of cleaning with an acid and cleaning with an alkali.


[69]


A method for manufacturing the magnetic recording medium substrate according to [68], further comprising a step of subjecting the glass to a chemical strengthening treatment between the mirror-surface polishing step and the cleaning step.


[70]


A method for manufacturing a magnetic recording medium substrate, comprising:


a step of preparing a glass by the method described in any one of [56] to [62],


a step of mirror-surface polishing the glass, and


following mirror-surface polishing, a cleaning step of cleaning with an acid and cleaning with an alkali.


[71]


The method for manufacturing a magnetic recording medium substrate according to [70], further comprising a step of subjecting the glass to a chemical strengthening treatment between the mirror-surface polishing step and the washing step.


[72]


A magnetic recording medium comprising an information recording layer on the magnetic recording medium substrate described in any one of [64] to [67].


[73]


The magnetic recording medium according to [72], suited to a vertical recording method.


[74]


A method for manufacturing a magnetic recording medium, comprising:


preparing a magnetic recording medium substrate according to the method described in any one of [68] to [71]; and


forming an information recording layer on the substrate.


[75]


A glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, denoted as mass percentages:

    • Si 20 to 40 percent,
    • Al 0.1 to 10 percent,
    • Li 0.1 to 5 percent,
    • Na 0.1 to 10 percent,
    • K 0 to 5 percent
    • (where the total content of Li, Na, and K is 15 percent or less),
    • Sn 0.005 to 0.6 percent, and
    • Ce 0 to 1.2 percent;


in that the Sb content is 0 to 0.1 percent;


by not comprising As or F; and


by having a λ(lambda)80 of 320 nm or greater.


[76]


A glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, as converted based on the oxides, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or lower);


in that, based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide are added;


in that the content of Sb oxide is 0 to 0.1 mass percent;


by not comprising As or F; and


by having a λ(lambda)80 of 320 nm or greater.


[77]


A glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or less);


by comprising a 0.1 to 3.5 mass percent total content of Sn oxide and Ce oxide, based on the total amount of the glass components;


in that the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) is 0.01 to 0.99;


in that the Sb oxide content is 0 to 0.1 percent;

    • by comprising no As or F; and


by having a λ(lambda)80 of 320 nm or greater.


Advantages of the Invention

The present invention provides a glass for a magnetic recording medium substrate permitting the achievement of a magnetic recording medium substrate having good chemical durability and an extremely flat surface, a magnetic recording medium substrate comprised of this glass, a magnetic recording medium equipped with the substrate, and methods of manufacturing the same.







BEST MODES OF CARRYING OUT THE INVENTION

The glass for a magnetic recording medium substrate of the present invention is an amorphous glass and is comprised of two forms. In the first form (referred to as “glass I”), the proportions of the atoms constituting the glass are specified by mass ratio. In the second form (referred to as “glass II”), the contents of the various oxides, as converted based on the oxides, are specified. There is also a third form (referred to as “glass III”) of the glass for a magnetic recording medium substrate of the present invention, an amorphous glass, in which the contents of the various oxides as converted based on the oxides, are specified.


A far flatter substrate surface can be achieved with amorphous glass than with crystalline glass.


[Glass I]

Glass I of the present invention is a glass for a magnetic recording medium substrate, comprised of an oxide glass, characterized:


by comprising, based on mass:

    • Si 20 to 40 percent,
    • Al 0.1 to 10 percent,
    • Li 0.1 to 5 percent,
    • Na 0.1 to 10 percent,
    • K 0 to 5 percent
    • (where the total content of Li, Na, and K is 15 percent or less),
    • Sn 0.005 to 0.6 percent, and
    • Ce 0 to 1.2 percent;


in that the Sb content is 0 to 0.1 percent; and


by not comprising As or F.


In glass I, the contents and total contents of the various components are expressed as mass percentages, unless specifically stated otherwise.


Si is a network-forming component of glass. It is an essential component that serves to enhance glass stability, chemical durability, and particularly, acid resistance; it also serves to lower thermal diffusion in the substrate; and increase the heating efficiency of the substrate by radiation. When the Si content is less than 20 percent, these functions are not adequately performed. When 40 percent is exceeded, unmelted material is produced in the glass, the viscosity of the glass during clarification becomes excessively high, and bubble elimination is inadequate. When a substrate is formed of glass containing unmelted material, protrusions due to unmelted material are formed on the surface of the substrate by polishing, precluding use as a magnetic recording medium substrate, for which an extremely high degree of surface flatness is required. In glass containing bubbles, when a portion of the bubbles are exposed on the substrate surface by grinding, they become pits, compromising flatness on the main surface of the substrate, thereby precluding its use as a magnetic recording medium substrate. Thus, the Si content is 20 to 40 percent, desirably falling within a range of 25 to 35 percent, and preferably falling within a range of 28 to 34 percent.


Al contributes to the formation of the glass network, and serves to enhance glass stability and chemical durability. When the Al content is less than 0.1 percent, these functions cannot be adequately performed, and when 10 percent is exceeded, the meltability of the glass diminishes and unmelted material tends to be produced. Accordingly, the Al content is 0.1 to 10 percent, desirably falling within a range of 1 to 10 percent, preferably falling within a range of 5 to 10 percent, more preferably falling within a range of 6 to 10 percent, and still more preferably, falling within a range of 7 to 10 percent.


Both Si and Al are components that contribute to enhancing chemical durability. To further enhance chemical durability, it is desirable for the total content of Si and Al to be 30 percent or greater, preferably 32 percent or greater, more preferably 35 percent or greater, still more preferably 36 percent or greater, and yet more preferably, 37 percent or greater. Increasing the total content of Si and Al lowers the thermoconductivity of the glass, increasing the heating efficiency of the substrate during manufacturing of a magnetic recording medium.


Li is an essential component that serves to strongly increase the meltability and moldability of the glass, even in alkalis. It is also desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. In chemically strengthened glass, it serves as a component that supports ion exchange during chemical strengthening. When the Li content is less than 0.1 percent, these functions cannot be adequately achieved. In particular, in glass I, in which relatively large quantities of Si and Al are incorporated to enhance chemical durability, an Li content of less than 0.1 percent results in an excessively high viscosity of the glass during clarification, precluding an adequate clarifying effect. When the Li content exceeds 5 percent, chemical durability, particularly acid resistance, diminishes. In addition, when the glass is formed into a substrate, the amount of alkali leaching out from the substrate surface increases. The precipitating alkali damages the information recording layer and the like. Accordingly, the Li content is 0.1 to 5 percent, desirably falling within a range of 1 to 5 percent, preferably a range of 1 to 4 percent, and still more preferably, a range of 1 to 3 percent.


Na is an essential component that serves to enhance glass meltability and moldability, and is desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. In a chemically strengthened glass, it serves as a component that supports ion exchange during chemical strengthening. When the Na content is less than 0.1 percent, these functions cannot be adequately achieved. In particular, in glass I, in which relatively large quantities of Si and Al are incorporated to enhance chemical durability, an Na content of less than 0.1 percent results in an excessively high viscosity of the glass during clarification, precluding an adequate clarifying effect. When the Na content exceeds 10 percent, chemical durability, particularly acid resistance, diminishes. In addition, when the glass is formed into a substrate, the amount of alkali leaching out from the substrate surface increases. The precipitating alkali damages the information recording layer and the like. Accordingly, the Na content is 0.1 to 10 percent, desirably falling within a range of 1 to 10 percent, preferably a range of 5 to 10 percent.


Li and Na are essential components in glass I, producing effects by reducing and preventing the leaching out of alkalis from the glass surface due to the effect of alkali mixing.


K is an optional component that serves to enhance glass meltability and moldability, and is desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. However, when the content of K exceeds 5 percent, chemical durability, particularly acid durability, diminishes. In addition, when the glass is formed into a substrate, the amount of alkali leaching out of the substrate surface increases, and the precipitating alkali damages the information recording layer and the like. Accordingly, the content of K is 0 to 5 percent, desirably falling within a range of 0 to 3 percent, and preferably falling within a range of 0.1 to 1 percent.


In glass I, the total content of Li, Na, and K is limited to 15 percent or less to achieve good chemical durability. The total content of Li, Na, and K desirably falls within a range of 5 to 15 percent, preferably within a range of 5 to 13 percent, more preferably within a range of 5 to 12 percent, still more preferably within a range of 5 to 11 percent, and yet more preferably, within a range of 7 to 11 percent.


In glass I, which contains relatively large quantities of Si and Al, the temperature of the glass during clarification is high, despite containing Li and Na. In such a glass, Sb has a poorer clarifying effect than Sn or Ce, described further below. In a glass to which Sn is added, the clarifying effect ends up deteriorating. When the Sb content exceeds 0.1 percent, the coexistence of Sn causes the residual bubbles in the glass to increase sharply. Accordingly, the Sb content is limited to 0.1 percent or less in glass I. The Sb content desirably falls within a range of 0 to 0.08 percent, preferably within a range of 0 to 0.05 percent, still more preferably within a range of 0 to 0.02 percent, and yet more preferably, within a range of 0 to 0.01 percent. The addition of no Sb (glass containing no Sb) is particularly desirable. Not incorporating Sb (rendering the glass “Sb-free”) reduces the density of residual bubbles in the glass to a range of from about one part in several to about one percent.


Sb has a greater effect on the environment than Sn or Ce. Thus, reducing the Sb content, or using no Sb at all, reduces the effect on the environment.


Although a powerful clarifying agent, As is desirably not incorporated (rendering the glass “As-free”) because it is toxic. Further, although F exhibits a clarifying effect, it volatizes during glass manufacturing, causing the properties and characteristics of the glass to fluctuate, and creating problems in terms of stable melting and molding. Further, volatization causes the generation of heterogenous portions, called striae, in the glass. When striae are present in the glass and polishing is conducted, slight differences in the rates at which the glass is removed in striae portions and homogenous portions produce irregularities on the polished surface, which are undesirable in magnetic recording medium substrates for which a high degree of flatness is required. Accordingly, As and F are not incorporated into glass I.


Glass I is prepared by the steps of melting a glass starting material, clarifying the glass melt obtained by melting the glass starting material, homogenizing the clarified glass melt, causing the homogenized glass melt to flow out, and molding it. In this process, the clarifying step is conducted at a relatively high temperature and the homogenizing step at a relatively low temperature. In the clarifying step, bubbles are actively produced in the glass, and clarification is promoted by incorporating minute bubbles contained in the glass to form large bubbles, which then tend to rise. Additionally, an effective method of eliminating bubbles is to incorporate as a glass component oxygen that is present as a gas within the glass in a state where the temperature of the glass is lowered as it flows out.


Sn and Ce also have the effects of releasing and incorporating gases. Sn strongly serves to promote clarification by actively releasing oxygen primarily at high temperature (in a temperature range of about 1,400 to 1,600° C.), while Ce strongly serves to incorporate oxygen at a low temperature state (a temperature range of about 1,200 to 1,400° C.), fixing it as a glass component. By coexisting Sn and Ce, which exhibit good clarifying effects at different temperature ranges in this manner, it is possible to adequately eliminate bubbles even in glasses in which the incorporation of Sb, As, and F is limited.


Sn is necessarily incorporated in a quantity of 0.005 percent or greater to achieve the above clarifying effect. However, when 0.6 percent is exceeded, metallic tin precipitates out into the glass. When the glass is polished to prepare a substrate, protrusions of metallic tin are produced on the substrate surface, and areas in which metallic tin drops out of the surface form pits, risking loss of the flatness of the substrate surface. Accordingly, the Sn content is 0.005 to 0.6 percent. From the above perspectives, the Sn content desirably falls within a range of 0.01 to 0.6 percent, preferably within a range of 0.06 to 0.6 percent, and more preferably, within a range of 0.1 to 0.6 percent.


Ce is desirably incorporated to enhance the clarifying effect. However, when 1.2 percent is exceeded, it reacts strongly with the refractory material and platinum constituting the melt vessel, and with the metal mold used to mold the glass. This increases impurities, negatively affecting the surface state. Accordingly, the Ce content is 0 to 1.2 percent. From the above perspective, the Ce content desirably falls within a range of 0 to 0.7 percent.


Sn and Ce serve to produce crystal nuclei when preparing crystalline glass. Since the glass in the present invention is employed in a substrate comprised of amorphous glass, it is desirable that no crystals precipitate during heating. Thus, the addition of excessive amounts of Sn and Ce is to be avoided.


As set forth above, since Sn releases oxygen gas into the glass melt at high temperature, when a large quantity of Sn is employed, the quantity of Ce, which incorporates oxygen gas present in the melt at low temperature, is also desirably increased. With this point in mind, preferred ranges of the Sn and Ce contents are given below.


When the Sn content is 0.005 percent or greater but less than 0.1 percent, the Ce content is desirably kept to 0 to 0.4 percent, preferably 0.0001 to 0.2 percent, and more preferably, 0.001 to 0.12 percent.


When the Sn content is 0.1 percent or greater but less than 0.14 percent, the Ce content is desirably kept to 0 to 0.4 percent, preferably 0.0005 to 0.4 percent, and more preferably, 0.003 to 0.14 percent.


When the Sn content is 0.14 percent or greater but less than 0.28 percent, the Ce content is desirably kept to 0 to 0.4 percent, preferably 0.0005 to 0.4 percent, more preferably 0.001 to 0.36 percent, and still more preferably, 0.001 to 0.3 percent.


When the Sn content is 0.28 percent or greater but less than 0.3 percent, the Ce content is desirably kept to 0 to 0.4 percent, preferably 0.0005 to 0.4 percent, more preferably 0.001 to 0.4 percent, and still more preferably, 0.006 to 0.4 percent.


When the Sn content is 0.3 percent or greater but less than 0.35 percent, the Ce content is desirably kept to 0 to 0.4 percent, preferably 0.0004 to 0.6 percent, more preferably 0.0005 to 0.5 percent, and still more preferably, 0.006 to 0.4 percent.


When the Sn content is 0.35 percent or greater but less than 0.43 percent, the Ce content is desirably kept to 0.0004 to 0.6 percent, preferably 0.0005 to 0.5 percent, and more preferably, 0.06 to 0.5 percent.


When the Sn content is 0.43 percent or greater but less than 0.45 percent, the Ce content is desirably kept to 0.0004 to 0.6 percent, preferably 0.0005 to 0.5 percent.


When the Sn content is 0.45 percent or greater but less than 0.5 percent, the Ce content is desirably kept to 0.0003 to 0.7 percent, preferably 0.005 to 0.6 percent, and more preferably, 0.006 to 0.5 percent.


For bubbles 0.3 mm and smaller in size (the size of bubbles (voids) remaining in the solidified glass), Sn works strongly to eliminate both relatively large and extremely small bubbles. Ce can be optionally added. However, the clarifying effect can be increased by keeping the ratio (by mass) of the Ce content to the Sn content, Ce/Sn, to 2.1 or lower.


When Ce is added along with Sn, the density of large bubbles of about 50 micrometers to 0.3 mm can be reduced to about one in several tens of parts. To achieve such an effect, the lower limit of the ratio (by mass) of the Ce content to the Sn content, Ce/Sn, is desirably 0.005, preferably 0.01, more preferably 0.02, still more preferably 0.03, yet more preferably 0.05, yet still more preferably 0.1, and even more preferably, 0.5. The upper limit of the ratio (by mass) of the Ce content to the Sn content, Ce/Sn, is desirably 2.0, preferably 1.8, more preferably 1.6, still more preferably 1.5, yet more preferably 1.4, yet still more preferably 1.3, even more preferably 1.2, and particularly preferably, 1.1.


From the above perspective, the total contents of Sn and Ce desirably falls within a range of 0.15 to 1.2 percent, preferably within a range of 0.15 to 0.8 percent.


A desirable form of glass I comprises:


Mg 0 to 5 percent,


Ca 0 to 5 percent,


Sr 0 to 2 percent, and


Ba 0 to 2 percent.


Mg serves to enhance glass meltability, moldability, and stability; heighten rigidity and hardness; and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the Mg content is desirably 0 to 5 percent. The Mg content preferably falls within a range of 0 to 2 percent, more preferably, within a range of 0.1 to 2 percent.


Ca specifically serves to enhance glass meltability, moldability, and stability; heighten rigidity and hardness; and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the Ca content is desirably 0 to 5 percent. The Ca content preferably falls within a range of 0 to 2 percent, more preferably, within a range of 0.1 to 2 percent.


Sr also serves to enhance glass meltability, moldability, and stability, and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability and increases the specific gravity and cost of starting materials. Thus, the Sr content is desirably 0 to 2 percent. The Sr content preferably falls within a range of 0 to 1 percent, more preferably within a range of 0 to 0.5 percent, and still more preferably, is zero.


Ba also serves to enhance glass meltability, moldability, and stability, and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability and increases the specific gravity and cost of starting materials. Thus, the Ba content is desirably 0 to 2 percent. The Ba content preferably falls within a range of 0 to 1 percent, more preferably within a range of 0 to 0.5 percent, and still more preferably, is zero.


To achieve meltability, moldability, glass stability, thermal expansion characteristics, and chemical durability, the total content of Mg, Ca, Sr, and Ba is desirably 0 to 10 percent, preferably 0 to 5 percent, and more preferably, 0.1 to 2 percent.


Since Mg and Ca are more desirable components than Sr and Ba among the alkaline earth metal components as set forth above, the total content of Mg and Ca is desirably 0 to 5 percent, preferably 0.1 to 5 percent. Further, the total content of Sr and Ba is desirably 0 to 2 percent, preferably 0 to 1 percent, and more preferably, zero.


Zr, Ti, La, Nb, Ta, and Hf serve to enhance chemical durability, particularly alkali resistance. However, when employed in excessive quantity, they reduce meltability. Thus, the total content of Zr, Ti, La, Nb, Ta, and Hf is desirably 0 to 10 percent, preferably 0.1 to 10 percent, and more preferably, 1 to 5 percent.


Of these, Zr does a particularly good job of enhancing chemical durability, particularly alkali resistance, while maintaining glass stability. It also serves to increase rigidity, toughness, and chemical strengthening efficiency. Accordingly, the Zr content is desirably 0 to 5 percent. The Zr content preferably falls within a range of 0.1 to 5 percent, more preferably a range of 1 to 2 percent.


To increase chemical durability, particularly alkali resistance, and chemical strengthening efficiency without compromising meltability, the ratio of the Zr content to the total content of Zr, Ti, La, Nb, Ta, and Hf is desirably 0.1 to 1, preferably 0.5 to 1, and more preferably, 1.


Sulfates can be added as clarifying agents to glass I in a range of 0 to 1 percent. However, they present a risk of unmelted material in the glass melt being scattered about by blowing, causing a sharp increase in foreign material in the glass. Thus, the incorporation of sulfates is undesirable.


By contrast, Sn and Ce do not present the problem of scattering by blowing or increased foreign material, and have good effects in eliminating bubbles.


Additional components that can be incorporated include B, which serves to reduce brittleness and enhance meltability. However, when introduced in excessive quantity, it diminishes chemical durability. The content thereof is thus desirably 0 to 2 percent, preferably 0 to 1 percent, and still more preferably, zero.


Zn serves to enhance meltability and increase rigidity. However, the incorporation of an excessive quantity reduces chemical durability and causes the glass to become brittle. Accordingly, the content thereof is desirably 0 to 3 percent, preferably 0 to 1 percent, and still more preferably, zero.


P can also be incorporated in small amounts without forfeiting the object of the invention. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the content thereof is desirably 0 to 1 percent, preferably 0 to 0.5 percent, more preferably 0 to 0.2 percent, and still more preferably, zero.


From the perspectives of enhancing meltability, moldability, and glass stability; increasing chemical durability, particularly alkali resistance; increasing heating efficiency during manufacturing of a magnetic recording medium; suppressing the leaching out of alkali from the glass surface due to the mixed alkali effect; and the like, a particularly desirable form of glass I comprises, denoted as mass percentages:


Si 28 to 34 percent,


Al 6 to 10 percent


(wherein the total content of Si and Al is 37 percent or greater),


Li 0.1 to 3 percent,


Na 5 to 10 percent,


K 0.1 to 1 percent


(where the total content of Li, Na, and K is 7 to 13 percent),


Mg 0.1 to 2 percent,


Ca 0.1 to 2 percent,


Sr and Ba in total 0 to 1 percent,


Zr 1 to 5 percent,


B 0 to 1 percent, and


Zn 0 to 1 percent


(referred to as glass I-1).


A particularly desirable form of glass I-1 comprises:


Si 28 to 34 percent,


Al 6 to 10 percent


(wherein the total content of Si and Al is 37 percent or greater),


Li 1 to 3 percent,


Na 6 to 10 percent,


K 0.1 to 1 percent,


Mg 0.1 to 2 percent,


Ca 0.1 to 2 percent,


Sr and Ba in total 0 to 0.7 percent, and


Zr 1 to 3 percent.


This particularly desirable form affords the effects of a reduction in the specific gravity of the glass, further enhanced alkali resistance, and even better meltability.


From the perspectives of enhancing meltability, moldability, and glass stability; increasing chemical durability; and increasing heating efficiency during manufacturing of a magnetic recording medium, a desirable second form of glass I comprises, denoted as mass percentages:


Si 28 to 34 percent,


Al 6 to 10 percent


(wherein the total content of Si and Al is 37 percent or greater),


Li 1 to 5 percent,


Na 1 to 10 percent,


K 0.1 to 3 percent


(where the total content of Li, Na, and K is 5 to 11 percent),


Mg 0 to 2 percent,


Ca 0 to 2 percent,


Sr 0 to 1 percent,


Ba 0 to 1 percent,


Zr, Ti, La, Nb, Ta, and Hf in total 1 to 10 percent,


B 0 to 1 percent,


Zn 0 to 1 percent, and


P 0 to 1 percent


(referred to as glass I-2).


A particularly desirable form of glass I-2 comprises:


Si 28 to 34 percent,


Al 6 to 10 percent


(wherein the total content of Si and Al is 37 percent or greater),


Li 1 to 5 percent,


Na 1 to 10 percent,


K 0.1 to 3 percent


(where the total content of Li, Na, and K is 5 to 11 percent),


Mg, Ca, Sr, and Ba in total 0 to 1 percent, and


Ti, La, and Nb in total 3 to 8 percent.


This particularly desirable form affords the effect of limiting the quantity of alkaline earth metal components. The incorporation of Ti, La, and Nb produces better chemical durability. To obtain even better chemical durability, a glass comprising 0.5 to 2 percent of Ti, 1 to 3 percent of La, and 0.5 to 2 percent of Nb is preferred.


[Glass II]

Glass II will be described next.


Glass II is a glass for a magnetic recording medium substrate comprised of oxide glass, characterized:


by comprising, as converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or lower);


in that, based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide are added; in that the content of Sb oxide is 0 to 0.1 mass percent; and by not comprising As or F.


Below, unless specifically indicated otherwise, the contents of Sn oxide, Ce oxide, and Sb oxide in glass II are given in the form of quantities added as mass percentages based on the total amount of the glass components which are glass components excluding Sn oxide, Ce oxide and Sb oxide. Other component contents and total contents are given as molar percentages.


SiO2, a glass network-forming component, is an essential component that serves to enhance glass stability, chemical durability, and particularly, acid resistance; lower thermal diffusion in the substrate; and increase the heating efficiency of the substrate by radiation. When the content of SiO2 is less than 60 percent, these functions are not adequately performed. At greater than 75 percent, unmelted material is produced in the glass, the viscosity of the glass becomes excessively high during clarification, and bubble elimination becomes inadequate. When a substrate is formed of glass containing unmelted material, protrusions due to unmelted material are formed on the surface of the substrate by polishing, precluding use as a magnetic recording medium substrate for which an extremely high degree of surface flatness is required. In glass containing bubbles, when a portion of the bubbles are exposed on the substrate surface by grinding, they become pits, compromising flatness on the main surface of the substrate, thereby precluding use as a magnetic recording medium substrate. Thus, the SiO2 content is 60 to 75 percent, desirably falling within a range of 65 to 75 percent, preferably falling within a range of 66 to 75 percent, and more preferably, falling within a range of 66 to 70 percent.


Al2O3 contributes to the formation of the glass network, and serves to enhance glass stability and chemical durability. When the Al2O3 content is less than 1 percent, these functions cannot be adequately performed, and when 15 percent is exceeded, the meltability of the glass diminishes and unmelted material tends to be produced. Accordingly, the Al2O3 content is 1 to 15 percent. The Al2O3 content desirably falls within a range of 5 to 13 percent, preferably within a range of 7 to 12 percent.


To enhance chemical durability, it is desirable for the total content of SiO2 and Al2O3 to be 65 percent or greater, preferably 70 percent or greater, more preferably 73 percent or greater, still more preferably 74 percent or greater, yet more preferably, 75 percent or greater, and even more preferably, 75.5 percent or greater. Increasing the total content of SiO2 and Al2O3 lowers the thermoconductivity of the glass, increasing the heating efficiency of the substrate during manufacturing of a magnetic recording medium.


Li2O is an essential component that serves to strongly increase the meltability and moldability of the glass, even in alkalis. It is also desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. In chemically strengthened glass, it serves as a component that supports ion exchange during chemical strengthening. When the Li2O content is less than 0.1 percent, these functions cannot be adequately achieved. In particular, in glass II, in which relatively large quantities of SiO2 and Al2O3 are incorporated to enhance chemical durability, an Li2O content of less than 0.1 percent results in an excessively high viscosity of the glass during clarification, precluding an adequate clarifying effect. Additionally, when the Li2O content exceeds 20 percent, chemical durability, particularly acid resistance, diminishes. When the glass is formed into a substrate, the amount of alkali leaching out from the substrate surface increases. The precipitating alkali damages the information recording layer and the like. Accordingly, the Li2O content is 0.1 to 20 percent. The Li2O content desirably falls within a range of 1 to 15 percent, preferably within a range of 5 to 10 percent.


Na2O is an essential component that serves to enhance glass meltability and moldability, and is desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. In a chemically strengthened glass, it serves as a component that supports ion exchange during chemical strengthening. When the Na2O content is less than 0.1 percent, these functions cannot be adequately achieved. In particular, in glass II, in which relatively large quantities of SiO2 and Al2O3 are incorporated to enhance chemical durability, an Na2O content of less than 0.1 percent results in an excessively high viscosity of the glass during clarification, precluding an adequate clarifying effect. Additionally, when the Na2O content exceeds 15 percent, chemical durability, particularly acid resistance, diminishes. When the glass is formed into a substrate, the amount of alkali leaching out from the substrate surface increases. The precipitating alkali damages the information recording layer and the like. Accordingly, the Na2O content is 0.1 to 15 percent, desirably falling within a range of 1 to 15 percent, preferably a range of 8 to 13 percent.


Li2O and Na2O are essential components in glass II, producing effects by reducing and preventing the leaching out of alkalis from the glass surface due to the effect of alkali mixing.


K2O is an optional component that serves to enhance glass meltability and moldability, and is desirable for imparting suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion. However, when the content of K2O exceeds 5 percent, chemical durability, particularly acid durability, diminishes. When the glass is formed into a substrate, the amount of alkali leaching out of the substrate surface increases. The precipitating alkali damages the information recording layer and the like. Accordingly, the content of K2O is 0 to 5 percent, desirably falling within a range of 0.1 to 2 percent, and preferably falling within a range of 0.1 to 1 percent.


In glass II, the total content of Li2O, Na2O, and K2O is limited to 25 percent or less to achieve good chemical durability. However, in addition to serving to enhance meltability and moldability as well as serving to impart suitable thermal expansion characteristics to a magnetic recording medium substrate by increasing the coefficient of thermal expansion, Li2O, Na2O, and K2O also serve to lower the viscosity of the glass during clarification, promoting bubble elimination. When these factors are taken into account, the total content of Li2O, Na2O, and K2O desirably falls within a range of 15 to 25 percent. The lower limit of the total content of Li2O, Na2O, and K2O is preferably 18 percent, and the upper limit thereof is preferably 23 percent, more preferably 22 percent, still more preferably 21 percent, and yet still more preferably, 20 percent.


In glass II, which contains relatively large quantities of SiO2 and Al2O3, the temperature of the glass during clarification is high, despite containing Li2O and Na2O. In such a glass, Sb oxide has a poorer clarifying effect than Sn oxide or Ce oxide, described further below. In a glass to which Sn oxide is added, the clarifying effect ends up is deteriorated by Sb oxide. When the Sb oxide content exceeds 0.1 percent, the coexistence of Sn oxide causes the residual bubbles in the glass to increase sharply. Accordingly, the Sb oxide content is limited to 0.1 percent or less in glass II. The Sb oxide content desirably falls within a range of 0 to 0.1 percent, preferably within a range of 0 to 0.05 percent, still more preferably within a range of 0 to 0.01 percent, and yet more preferably, within a range of 0 to 0.001 percent. The addition of no Sb oxide (glass containing no Sb) is particularly desirable. Not incorporating Sb (rendering the glass “Sb-free”) reduces the density of residual bubbles in the glass to a range of from about one part in several to about one percent. Here, the term “Sb oxide” means oxides such as Sb2O3 and Sb2O5 that have melted into the glass, irrespective of the valence number of Sb.


Sb oxide has a greater effect on the environment than Sn oxide or Ce oxide. Thus, reducing the Sb oxide content, or using no Sb at all, is desirable because it lessens the effect on the environment.


Although As is a powerful clarifying agent, the glass is desirably rendered As-free due to the toxicity of this element. Further, although F exhibits a clarifying effect, it volatizes during glass manufacturing, causing the properties and characteristics of the glass to fluctuate, and creating problems in terms of stable melting and molding. Further, volatization causes the generation of heterogeneous portions, called striae, in the glass. When striae are present in the glass and polishing is conducted, slight differences in the rates at which the glass is removed in striae portions and homogenous portions produce irregularities on the polished surface, which are undesirable in magnetic recording medium substrates for which a high degree of flatness is required. Accordingly, As and F are not incorporated into glass II.


Glass II is prepared by the steps of melting a glass starting material, clarifying the glass melt that has been obtained by melting the glass starting material, homogenizing the clarified glass melt, causing the homogenized glass melt to flow out, and molding it. In this process, the clarifying step is conducted at a relatively high temperature and the homogenizing step at a relatively low temperature. In the clarifying step, bubbles are actively produced in the glass, and clarification is promoted by incorporating minute bubbles contained in the glass to form large bubbles, which then tend to rise. Additionally, an effective method of eliminating bubbles is to incorporate, as a glass component, oxygen that is present as a gas within the glass in a state where the temperature of the glass is lowered as it flows out.


The clarification mechanisms of Sn and Ce are as set forth above. By coexisting Sn oxide and Ce oxide, it is possible to adequately eliminate bubbles even in glasses in which the incorporation of Sb, As, and F is limited.


Sn oxide is necessarily incorporated in a quantity of 0.01 percent or greater to achieve the above clarifying effect. However, when 0.7 percent is exceeded, metallic tin precipitates out into the glass. When the glass is polished to prepare a substrate, protrusions of metallic tin are produced on the substrate surface, and areas in which metallic tin drops out of the surface form pits, risking loss of the flatness of the substrate surface. Accordingly, the Sn oxide content is 0.01 to 0.7 percent. From the above perspectives, the Sn oxide content desirably falls within a range of 0.1 to 0.6 percent, preferably within a range of 0.15 to 0.5 percent. Here, the term “Sn oxide” means oxides such as SnO and SnO2 that have melted into the glass, irrespective of the valence of Sn. The Sn oxide content is the total content of oxides such as SnO and SnO2.


Ce oxide is desirably incorporated to enhance the clarifying effect. However, when 1.4 percent is exceeded, it reacts strongly with the refractory material and platinum constituting the melting vessel, and reacts strongly with the metal mold used to mold the glass. This increases impurities, negatively affecting the surface state. Accordingly, the Ce oxide content is 0 to 1.4 percent. The Ce oxide content desirably falls within a range of 0 to 0.7 percent, preferably within a range of 0.003 to 0.7 percent. Here, the term “Ce oxide” means oxides such as CeO2 and Ce2O3 that have melted into the glass, irrespective of the valence of Ce. The Ce oxide content is the total content of oxides such as CeO2 and Ce2O3.


Sn and Ce serve to produce crystal nuclei when preparing crystalline glass. Since the glass in the present invention is employed in a substrate comprised of amorphous glass, it is desirable that no crystals precipitate during heating. Thus, the addition of excessive amounts of Sn oxide and Ce oxide is to be avoided.


As set forth above, since Sn oxide releases oxygen gas into the glass melt at high temperature, when a large quantity of Sn oxide is employed, the quantity of Ce oxide, which incorporates oxygen gas present in the melt at low temperature, is also desirably increased. With this point in mind, preferred ranges of the Sn oxide and Ce oxide contents are given below.


When the Sn oxide content is 0.1 percent or greater but less than 0.15 percent, the Ce oxide content is desirably kept to 0 to 0.45 percent, preferably 0 or greater but less than 3 percent, more preferably 0.001 to 0.18 percent, still more preferably 0.001 to 0.15 percent, yet still more preferably 0.001 to 0.11 percent, and even more preferably, 0.003 to 0.1 percent.


When the Sn oxide content is 0.15 percent or greater but less than 0.35 percent, the Ce oxide content is desirably kept to 0 to 0.45 percent, preferably 0.001 to 0.4 percent, and more preferably, 0.003 to 0.25 percent.


When the Sn oxide content is 0.35 percent or greater but less than 0.45 percent, the Ce oxide content is desirably kept to 0 to 0.45 percent, preferably 0.001 to 0.4 percent, and more preferably 0.006 to 0.35 percent.


When the Sn oxide content is 0.45 percent or greater but less than 0.5 percent, the Ce oxide content is desirably kept to 0.001 to 0.5 percent, preferably 0.008 to 0.5 percent, and more preferably, 0.06 to 0.5 percent.


When the Sn oxide content is 0.5 percent or greater but less than 0.55 percent, the Ce oxide content is desirably kept to 0.001 to 0.5 percent, preferably 0.008 to 0.5 percent.


When the Sn oxide content is 0.55 percent or greater but less than 0.6 percent, the Ce oxide content is desirably kept to 0.0005 to 0.6 percent, preferably 0.005 to 0.6 percent, and more preferably, 0.1 to 0.6 percent.


For bubbles 0.3 mm and smaller in size (the size of bubbles (voids) remaining in the solidified glass), Sn oxide works strongly to eliminate both relatively large and extremely small bubbles. Ce oxide can be optionally added. However, the clarifying effect can be increased by keeping the ratio (by mass) of the Ce oxide content to the Sn oxide content, CeO2/SnO2, to 2.0 or lower.


When Ce oxide is added along with Sn oxide, the density of large bubbles of about 50 micrometers to 0.3 mm can be reduced to about one in several tens of parts. To achieve such an effect, the lower limit of the ratio (by mass) of the Ce oxide content to the Sn oxide content, Ce/Sn, is desirably 0.01, preferably 0.02, more preferably 0.05, and still more preferably 0.1. The upper limit of the mass ratio of the Ce oxide content to the Sn oxide content, Ce/Sn, is desirably 1.8, preferably 1.6, more preferably 1.5, still more preferably 1.4, yet more preferably 1.3, yet still more preferably 1.2, and even more preferably, 1.1.


A desirable form of glass II comprises:


MgO 0 to 10 percent,


CaO 0 to 10 percent,


SrO 0 to 5 percent, and


BaO 0 to 5 percent.


MgO serves to enhance glass meltability, moldability, and glass stability; heighten rigidity and hardness; and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the MgO content is desirably 0 to 10 percent. The MgO content preferably falls within a range of 0 to 5 percent, more preferably, within a range of 0.1 to 5 percent.


CaO specifically serves to enhance glass meltability, moldability, and glass stability; heighten rigidity and hardness; and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the CaO content is desirably 0 to 10 percent. The Ca content preferably falls within a range of 0 to 5 percent, more preferably, within a range of 0.1 to 5 percent.


SrO also serves to enhance glass meltability, moldability, and glass stability, and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability and increases the specific gravity and cost of starting materials. Thus, the SrO content is desirably 0 to 5 percent. The SrO content preferably falls within a range of 0 to 2 percent, more preferably within a range of 0 to 1 percent, and still more preferably, is zero.


BaO also serves to enhance glass meltability, moldability, and glass stability, and increase the coefficient of thermal expansion. However, the incorporation of an excessive quantity reduces chemical durability and increases the specific gravity and cost of starting materials. Thus, the BaO content is desirably 0 to 5 percent. The Ba content preferably falls within a range of 0 to 2 percent, more preferably within a range of 0 to 1 percent, and still more preferably, is zero.


To achieve meltability, moldability, glass stability, thermal expansion characteristics, and chemical durability, the total content of MgO, CaO, SrO, and BaO is desirably 0.1 to 10 percent, preferably 0.1 to 5 percent, and more preferably, 1 to 5 percent.


Since MgO and CaO are more desirable components than SrO and BaO among the alkaline earth metal components as set forth above, the total content of MgO and CaO is desirably 0 to 5 percent, preferably 0.1 to 5 percent, and more preferably, 1 to 5 percent. Further, the total content of SrO and BaO is desirably 0 to 5 percent, preferably 0 to 1 percent, and more preferably, zero.


ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 serve to enhance chemical durability, particularly alkali resistance. However, when employed in excessive quantity, they reduce meltability. Thus, the total content of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 is desirably 0 to 5 percent, preferably 0.1 to 5 percent, and more preferably, 0.1 to 3 percent.


Of these, ZrO2 does a particularly good job of enhancing chemical durability, particularly alkali resistance, while maintaining glass stability. It also serves to increase rigidity, toughness, and chemical strengthening efficiency. Accordingly, the ZrO2 content is desirably 0.1 to 5 percent. The [[Zr]]ZrO2 content preferably falls within a range of 0.1 to 3 percent, more preferably within a range of 0.1 to 2 percent.


To increase chemical durability, particularly alkali resistance, and chemical strengthening efficiency without compromising meltability, the ratio of the ZrO2 content to the total content of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 is desirably 0.1 to 1, preferably 0.3 to 1, more preferably 0.5 to 1, still more preferably 0.8 to 1, yet still more preferably 0.9 to 1, and particularly preferably, 1.


Sulfates can be added as clarifying agents to glass II in a range of 0 to 1 percent. However, they present a risk of unmelted material in the glass melt being scattered about by blowing, causing a sharp increase in foreign material in the glass. Thus, no incorporation of sulfates is desirable.


By contrast, Sn oxide and Ce oxide do not present the problem of scattering by blowing or increased foreign material, and have good effects in eliminating bubbles.


Additional components that can be incorporated include B2O3, which serves to reduce brittleness and enhance meltability. However, when introduced in excessive quantity, it diminishes chemical durability. The content thereof is thus desirably 0 to 3 percent, preferably 0 to 1 percent, and still more preferably, zero.


ZnO serves to enhance meltability and increase rigidity. However, the incorporation of an excessive quantity reduces chemical durability and causes the glass to become brittle. Accordingly, the content thereof is desirably 0 to 3 percent, preferably 0 to 1 percent, and still more preferably, zero.


P2O5 can also be incorporated in small amounts without forfeiting the object of the invention. However, the incorporation of an excessive quantity reduces chemical durability. Thus, the content thereof is desirably 0 to 1 percent, preferably 0 to 0.5 percent, more preferably 0 to 0.3 percent, and still more preferably, zero.


From the perspectives of enhancing meltability, moldability, and glass stability; increasing chemical durability, particularly alkali resistance; increasing heating efficiency during manufacturing of a magnetic recording medium; suppressing the leaching out of alkali from the glass surface due to the mixed alkali effect; and the like, a particularly desirable form of glass II comprises, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 7 to 12 percent


(where the total content of SiO2 and Al2O3 is 75 percent or greater),


Li2O 5 to 10 percent, Na2O 8 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 15 to 22 percent),


MgO 0.1 to 5 percent,


CaO 0.1 to 5 percent,


SrO and BaO in total 0 to 1 percent,


ZrO2 0.1 to 2 percent,


B2O3 0 to 1 percent, and


ZnO 0 to 1 percent


(referred to as glass II-1).


A particularly desirable form of glass II-1 comprises:


SiO2 66 to 70 percent,


Al2O3 7 to 11 percent,


Li2O 6 to 10 percent,


Na2O 9 to 13 percent,


K2O 0.1 to 1 percent


(wherein the total content of Li2O, Na2O, and K2O is 16 to 22 percent),


MgO 0.1 to 2 percent,


CaO 0.5 to 4 percent,


SrO and BaO in total 0 to 0.5 percent, and


ZrO2 0.5 to 2 percent.


This particularly desirable form affords the effects of reducing the specific gravity of the glass, further enhancing alkali resistance, and further improving meltability.


From the perspectives of enhancing meltability, moldability, and glass stability; increasing chemical durability; increasing heating efficiency during manufacturing of a magnetic recording medium; and the like, a desirable form of glass II comprises, denoted as mass percentages:


SiO2 66 to 70 percent,


Al2O3 5 to 12 percent,


Li2O 5 to 20 percent,


Na2O 1 to 13 percent,


K2O 0.1 to 2 percent


(wherein the total content of Li2O, Na2O, and K2O is 18 to 22 percent),


MgO and CaO in total 0 to 5 percent,


SrO and BaO in total 0 to 5 percent,


ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total 0.1 to 5 percent,


B2O3 0 to 3 percent,


ZnO 0 to 1 percent, and


P2O5 0 to 0.5 percent


(referred to as glass II-2).


A particularly desirable form of glass II-2 comprises:


SiO2 66 to 70 percent;


Al2O3 5 to 11 percent


Li2O 10 to 19 percent;


Na2O 1 to 6 percent;


K2O 0.1 to 2 percent,


MgO and CaO in total 0 to 2 percent;


SrO and BaO in total 0 to 2 percent; and


ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total 0.5 to 4 percent.


In this particularly desirable form, the quantity of alkaline earth metal components is suppressed and TiO2, La2O3, and Nb2O5 are incorporated to achieve better chemical durability. To obtain better chemical durability, a glass containing 0.5 to 3 percent of TiO2, 0.1 to 2 percent of La2O3, and 0.1 to 2 percent of Nb2O5 is preferred.


[Common Features of Glasses I and II]

The common features of glasses I and II will be described below.


In the glasses of the present invention, Sn, or Sn and Ce, exhibit better clarifying effects than Sb. As set forth above, Sn primarily actively releases oxygen gas in high temperature states (a temperature range of about 1,400 to 1,600° C.), thereby strongly promoting clarification. Ce strongly incorporates oxygen gas in low temperature states (a temperature range of about 1,200 to 1,400° C.), fixing it as a glass component. The viscosity of the glass at 1,400° C., where the temperature range of the clarifying effect of Sn meets the temperature range of the clarifying effect of Ce, greatly affects clarification efficiency.


To increase the chemical durability of both glass I and glass II, the quantities of the Si component and Al component are increased, and an alkali component is made an essential component. However, since the quantities thereof are limited as set forth above, the viscosity of the glass at 1,400° C. exhibits an upward trend. When the viscosity of the glass in the clarification temperature range becomes excessively high, the rate at which bubbles rise in the glass decreases and bubble elimination deteriorates.


To simultaneously achieve enhanced chemical durability and an improved clarifying effect in the present invention, the viscosity at 1,400° C. is desirably made 103 dPa·s or lower while employing a total content of Si and Al of 30 mass percent or higher in glass I, and the viscosity at 1,400° C. is desirably made 103 dPa·s or lower while employing a total content of SiO2 and Al2O3 of 65 molar percent or greater in glass II.


From the perspective of enhancing chemical durability, the range of the total content of Si and Al in glass I is desirably 32 mass percent or greater, preferably 35 mass percent or greater, more preferably 36 mass percent or greater, and still more preferably, 37 mass percent or greater. The range of the total content of SiO2 and Al2O3 in glass II is desirably 65 molar percent or greater, preferably 70 molar percent or greater, more preferably 73 molar percent or greater, still more preferably 74 molar percent or greater, yet still more preferably 75 molar percent or greater, and even more preferably, 75.5 molar percent or greater.


To enhance the clarifying effect, the viscosity of both glass I and glass II is desirably 1027 dPa·s or lower at 1,400° C.


In this manner, the density of residual bubbles contained in the glass per unit mass is kept to 60 bubbles/kg or lower, desirably 40 bubbles/kg or lower, preferably 20 bubbles/kg or lower, more preferably 10 bubbles/kg or lower, still more preferably 2 bubbles/kg or lower, and even more preferably, 0 bubbles/kg. This permits the highly efficient mass production of substrates suited to high recording density magnetic recording media.


Halogens other than F, such as CI, Br, and I, are desirably not added to glass I or glass II. These halogens also volatize from the glass melt, producing striae, which are undesirable in the formation of a flat substrate surface.


Since Pb, Cd, and the like negatively affect the environment, their incorporation is also desirably avoided.


In both glasses I and II, the incorporation of Sn in the form of SnO2 is desirable for effectively releasing oxygen gas at high temperature.


Adding Sn and Ce as set forth above increases the Young's modulus of the glass. Increasing the Young's modulus affords good fluttering resistance during high-speed rotation of a magnetic recording medium equipped with a substrate made of glass I or glass II.


Further, the addition of Sn and Ce as set forth above permits the stable production of thinner blanks in the course of press molding a glass melt into disk-shaped substrate blanks, making it possible to reduce the sheet thickness tolerance of the glass blanks.


Further, the addition of Ce makes it possible to use the emission of blue fluorescence when glass I or glass II is irradiated with light of short wavelength, such as UV light, to readily distinguish between substrates comprised of glass I or glass II and substrates made from glass to which no Ce has been added, which are identical in appearance and otherwise difficult to distinguish visually. That is, by irradiating these two types of substrates with UV light and checking for the presence of fluorescence, it is possible to distinguish between them without analyzing the composition of the glasses. As a result, in the course of producing magnetic recording media with substrates comprised of multiple types of glass, this test can be used to avoid problems caused by the mixing in of substrates comprised of heterogeneous glass.


Further, by irradiating light of short wavelength, such as UV light, onto a substrate comprised of glass I or glass II to which Ce has been added to generate fluorescence, it is possible to check relatively easily for the presence of foreign matter on the substrate surface.


The method for manufacturing the glass for a magnetic recording medium substrate of the present invention will be described next. The first form of the method for manufacturing a glass for a magnetic recording medium of the present invention (referred to as “glass manufacturing method I”) is a method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by: mixing a glass starting material to which Sn, and optionally Ce, are added, comprising, denoted as mass percentages:


Si 20 to 40 percent;


Al 0.1 to 10 percent;


Li 0.1 to 5 percent;


Na 0.1 to 10 percent;


K 0 to 5 percent


(wherein the total content of Li, Na, and K is 15 percent or lower);


Sn 0.005 to 0.6 percent; and


Ce 0 to 1.2 percent;


so as to permit obtaining a glass with an Sb content of 0 to 0.1 percent and containing no As or F; melting the glass starting material; clarifying the glass melt obtained; and then molding the glass melt obtained. That is, glass manufacturing method I is a method for manufacturing glass I. The desirable composition range and characteristic ranges thereof are as set forth above.


A desirable form of glass manufacturing method I is a method comprising mixing a glass starting material comprising a ratio of Ce content to Sn content, Ce/Sn, falling within a range of 0.02 to 1.3; maintaining the glass melt obtained at 1,400 to 1,600° C.; decreasing the temperature; maintaining the temperature at 1,200 to 1,400° C.; and conducting molding.


Employing a ratio of Ce content to Sn content, Ce/Sn, of 0.02 to 1.3 and maintaining the glass melt at 1,400 to 1,600° C. lowers the viscosity of the glass, creating a state in which bubbles in the glass readily rise. Further, the release of oxygen by Sn produces a clarification-enhancing effect. Subsequently lowering the temperature of the glass melt and maintaining it at 1,200 to 1,400° C. makes it possible to markedly enhance the elimination of bubbles through the incorporation of oxygen by Ce.


The second form of the method for manufacturing a glass for a magnetic recording medium substrate of the present invention (referred to as “glass manufacturing method II”) is a method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by: mixing a glass starting material to which Sn, and optionally Ce, are added, comprising, as converted based on the oxides, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent, and


K2O 0 to 5 percent


(wherein the total content of Li2O, Na2O, and K2O is 25 percent or lower);


so as to permit obtaining a glass comprising 0 to 0.1 percent of Sb, no As or F, and, based on the total amount of the glass components, 0.01 to 0.7 mass percent of Sn oxide and 0 to 1.4 mass percent of Ce oxide; melting the glass starting material; clarifying the glass melt obtained; and molding the glass melt obtained. That is, glass manufacturing method II is a method for manufacturing glass II. The desirable composition range and characteristic ranges thereof are as set forth above.


A desirable form of glass manufacturing method II is a method comprising mixing the glass starting material so that the ratio of the content of Ce oxide to the content of Sn oxide (Ce oxide/Sn oxide) denoted as a mass percentage falls within a range of 0.02 to 1.2; melting the starting material; maintaining the glass melt obtained at 1,400 to 1,600° C.; reducing the temperature; maintaining the temperature at 1,200 to 1,400° C.; and molding the glass melt.


Employing a ratio of Ce oxide content to Sn oxide content (Ce oxide/Sn oxide) of 0.02 to 1.2 and maintaining the glass melt at 1,400 to 1,600° C. lowers the viscosity of the glass, creating a state in which bubbles in the glass readily rise. Further, the release of oxygen by Sn produces a clarification-enhancing effect. Subsequently lowering the temperature of the glass melt and maintaining it at 1,200 to 1,400° C. makes it possible to markedly enhance the elimination of bubbles through the incorporation of oxygen by Ce.


When both Sn and Ce are present in the glass melt in glass manufacturing methods I and II, the characteristic of the glass in the form of a viscosity at 1,400° C. of 103 dPa·s or lower and the synergistic effect due to the presence of both Sn and Ce markedly enhance bubble elimination.


Denoting the period of maintenance at 1,400 to 1,600° C. as TH and the period of maintenance at 1,200 to 1,400° C. as TL, it is desirable to keep TL/TH to 0.5 or less, preferably 0.2 or less. Increasing TH relative to TL in this manner facilitates the discharging of gases within the glass to the exterior. To promote the gas incorporating effect of Ce within the glass, TL/TH is desirably greater than 0.01, preferably greater than 0.02, more preferably greater than 0.03, and still more preferably, greater than 0.04.


To increase the individual bubble eliminating effects of Sn and Ce, the temperature difference in the course of dropping the temperature from within the range of 1,400 to 1,600° C. to within the range of 1,200 to 1,400° C. is desirably 30° C. or greater, preferably 50° C. or greater, more preferably 80° C. or greater, still more preferably 100° C. or greater, and even more preferably, 150° C. or greater. The upper limit of the temperature difference is 400° C.


In glass manufacturing methods I and II, the quantities of Sn and Ce added are desirably established to yield a density of residual bubbles within the glass of 100 bubbles/kg or lower. The quantities of Sn and Ce added are preferably established to yield a density of residual bubbles of 60 bubbles/kg or lower. The quantities of Sn and Ce added are more preferably established to yield a density of residual bubbles of 40 bubbles/kg or lower. The quantities of Sn and Ce added are still more preferably established to yield a density of residual bubbles of 20 bubbles/kg or lower. The quantities of Sn and Ce added are yet still more preferably established to yield a density of residual bubbles of 10 bubbles/kg or lower. The quantities of Sn and Ce added are even more preferably established to yield a density of residual bubbles of 2 bubbles/kg or lower. The quantities of Sn and Ce added are particularly preferably established to yield a density of residual bubbles of 0 bubbles/kg. Even when residual bubbles are present, the size of all of the bubbles can be kept to 0.3 mm or less. The above quantities of Sn and Ce added can be specified as the total quantity of Sn and Ce added, as a ratio of the quantities of Sn and Ce added, or the like.


In glass manufacturing methods I and II, that is, in the methods for manufacturing glasses I and II, the glass starting materials are charged to a melting vat, heated and melted to obtain a glass melt. The glass melt is then sent to a clarifying vat. While the glass melt is in the clarifying vat, it is maintained in a higher temperature state than in the melting vat—for example, within a temperature range of 1,400 to 1,600° C. The glass melt is then sent to an operating vat from the clarifying vat. In the operating vat, it is stirred by a stirring device. Once it has been homogenized, it is caused to flow out of a outflow pipe connected to the operating vat and then molded. The clarifying vat and operating vat are linked by means of a connecting apparatus, such as a pipe. While the glass melt is flowing through the connecting apparatus, the temperature decreases due to heat exchange with the connecting apparatus. The interior of the operating vat is maintained at 1,200 to 1,400° C. In such a process, the Sn discharges oxygen gas within the clarifying vat, promoting clarification. The Ce incorporates oxygen gas within the glass in the operating vat, fixing the oxygen in the glass composition and thereby promoting the bubble eliminating effect.


The melting vat, in which the glass starting materials are heated and vitrified, and the clarifying vat, are comprised of a refractory material such as electrocasting bricks, sinterd bricks, or the like. The operating vat and the connecting pipe linking the clarifying vat and the operating vat, and the outflow pipe, are desirably comprised of platinum or a platinum alloy (referred to as a “platinum-based material”). The molten material within the melting vat where the starting material is vitrified, and the glass melt within the clarifying vat reaching the maximum temperature in the glass manufacturing process, both exhibit highly corrosive properties. Although platinum-based materials exhibit good resistance to corrosion, they corrode when they come into contact with highly corrosive glass, mixing into the glass as a solid platinum material. Since the solid platinum material exhibits resistance to corrosion, platinum that has mixed into the glass as a solid material does not completely melt into the glass, but remains as foreign matter in the molded glass. However, refractory material that corrodes will mix into the glass, melting into the glass and tending not to remain as foreign matter. Accordingly, the melting vat and clarifying vat are desirably manufactured of a refractory material. When the operating vat is made of a refractory material, the surface of the refractory material melts into the glass melt, generating striae in the glass which was homogeneous, and rendering it heterogeneous. The temperature of the operating vat reaches up to 1,400° C., and the corrosiveness of the glass decreases. Thus, the operating vat, connecting pipe, and outflow pipe are desirably comprised of platinum-based material that tends not to melt into the glass. The stirring apparatus that stirs and homogenizes the glass melt in the operating vat is also desirably comprised of a platinum-based material.


[Glass III]

Glass III will be described next.


Glass III is a glass for a magnetic recording medium substrate comprised of oxide glass, characterized by comprising, converted based on the oxide, denoted as molar percentages:


SiO2 60 to 75 percent,


Al2O3 1 to 15 percent,


Li2O 0.1 to 20 percent,


Na2O 0.1 to 15 percent,


K2O 0 to 5 percent


(where the total content of Li2O, Na2O, and K2O is 25 percent or less);


by comprising a 0.1 to 3.5 mass percent total content, based on the total amount of the glass components, of Sn oxide and Ce oxide; in that the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) is 0.01 to 0.99; in that the Sb oxide content is 0 to 0.1 percent; and by comprising no As or F.


Below, unless specifically indicated otherwise, the contents of Sn oxide, Ce oxide, and Sb oxide are given in the form of quantities added as mass percentages based on the total amount of the glass components. Additionally, component contents and total contents are given as molar percentages.


The various contents of SiO2, Al2O3, Li2O, Na2O, and K2O, and the total contents of Li2O, Na2O, and K2O in glass III are identical to those in glass II.


In glass III, which comprises relatively large contents of SiO2 and Al2O3, the temperature of the glass during clarification is high despite containing Li2O and Na2O. In such a glass, Sb oxide has a poorer clarifying effect than Sn oxide or Ce oxide, described further below. In a glass to which Sn oxide is added, the clarifying effect ends up deteriorating with Sb oxide. When the Sb oxide content exceeds 0.1 percent, the coexistence of Sn oxide causes the residual bubbles in the glass to increase sharply. Accordingly, the Sb oxide content is limited to 0.1 percent or less in glass III. The Sb oxide content desirably falls within a range of 0 to 0.05 percent, preferably within a range of 0 to 0.01 percent, and still more preferably, within a range of 0 to 0.001 percent. The addition of no Sb oxide (glass containing no Sb) is particularly desirable. Not incorporating Sb (rendering the glass “Sb-free”) reduces the density of residual bubbles in the glass to a range of from about one part in several to about one percent. Here, the term “Sb oxide” means oxides such as Sb2O3 and Sb2O5 that have melted into the glass, irrespective of the valence number of Sb.


Sb oxide has a greater effect on the environment than Sn oxide or Ce oxide. Thus, reducing the Sb oxide content, or using no Sb at all, is desirable because it lessens the effect on the environment.


Although As is a powerful clarifying agent, the glass is desirably rendered As-free due to the toxicity of this element. Further, although F exhibits a clarifying effect, it volatizes during glass manufacturing, causing the properties and characteristics of the glass to fluctuate, and creating problems in terms of stable melting and molding. Further, volatization causes the generation of heterogeneous portions, called striae, in the glass. When striae are present in the glass and polishing is conducted, slight differences in the rates at which the glass is removed in striae portions and homogenous portions produce irregularities on the polished surface, which are undesirable in magnetic recording medium substrates for which a high degree of flatness is required. Accordingly, As and F are not incorporated into glass III.


Glass III is prepared by the steps of melting a glass starting material, clarifying the glass melt obtained by melting the glass starting material, homogenizing the clarified glass melt, causing the homogenized glass melt to flow out, and molding it. In this process, the clarifying step is conducted at a relatively high temperature and the homogenizing step at a relatively low temperature. In the clarifying step, bubbles are actively produced in the glass, and clarification is promoted by incorporating minute bubbles contained in the glass to form large bubbles, which then tend to rise. Additionally, an effective method of eliminating bubbles is to incorporate, as a glass component, oxygen that is present as a gas within the glass in a state where the temperature of the glass is lowered as it flows out.


In glass III, the Sn oxide serves to promote clarification by releasing oxygen gas at high temperature, incorporating the small bubbles contained in the glass into large bubbles, which then tend to rise. Additionally, the Ce oxide serves to eliminate bubbles by incorporating as a glass component the oxygen that is present as a gas in the glass at low temperature. For bubbles 0.3 mm and smaller in size (the size of bubbles (voids) remaining in the solidified glass), Sn oxide works strongly to eliminate both relatively large and extremely small bubbles. When Ce oxide is added along with Sn oxide, the density of large bubbles of about 50 micrometers to 0.3 mm can be reduced to about one in several tens of parts. Employing Ce oxide in combination with Sn oxide in this manner enhances the clarifying effect of the glass over a broad temperature range, from a high temperature range to a low temperature range, permitting adequate bubble elimination even in glasses in which the incorporation of Sb oxide, As, and F is limited.


An adequate clarifying effect cannot be expected when the total content of Sn oxide and Ce oxide is less than 0.1 percent. When 3.5 percent is exceeded, the Sn oxide and Ce oxide do not melt entirely, running the risk of becoming foreign matter and contaminating the glass. When foreign matter appears in even trace quantities on the surface in the course of manufacturing a substrate, it forms protrusions, portions where foreign matter has dropped out become pits, the flatness of the substrate surface is lost, and the substrate can no longer be employed as a magnetic recording medium substrate. Sn and Ce serve to produce crystal nuclei when preparing crystalline glass. Since the glass in the present invention is employed in a substrate comprised of amorphous glass, it is desirable that no crystals precipitate during heating. The addition of excessive amounts of Sn and Ce tends to cause such crystals to precipitate. Thus, the addition of excessive amounts of Sn oxide and Ce oxide is to be avoided. For these reasons, in glass III, the total content of Sn oxide and Ce oxide is 0.1 to 3.5 percent. The total content of Sn oxide and Ce oxide desirably falls within a range of 0.1 to 2.5 percent, preferably within a range of 0.1 to 1.5 percent, and more preferably, within a range of 0.5 to 1.5 percent.


In glass III, the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) falls within a range of 0.01 to 0.99.


When this ratio drops below 0.01 or exceeds 0.99, the synergistic effect of the clarifying effect of Sn oxide at high temperature and the clarifying effect of Ce oxide at low temperature becomes difficult to achieve. When an unbalanced amount of either Sn oxide or Ce oxide is added, the oxide that has been incorporated in large quantity from among Sn oxide and Ce oxide tends not to melt entirely, and to produce unmelted material in the glass.


For these reasons, the ratio of the Sn oxide content to the total content of Sn oxide and Ce oxide (Sn oxide content/(Sn oxide content+Ce oxide content)) falls within a range of 0.01 to 0.99. This ratio desirably falls within a range of 0.02 and above, preferably a range of ⅓ and above, more preferably a range of 0.35 to 0.99, still more preferably a range of 0.45 to 0.99, yet still more preferably a range of 0.45 to 0.98, and even more preferably, a range of 0.45 to 0.85.


The content of Sn oxide is desirably 0.1 percent or greater to achieve the above-described clarifying effect. However, when 3.5 percent is exceeded, it precipitates out of the glass as foreign matter. In the course of grinding the glass, protrusions of foreign matter form on the surface of the substrate, portions where foreign matter has dropped out of the surface become pits, and there is a risk of losing the flatness of the substrate surface. Accordingly, the content of Sn oxide is desirably 0.1 to 3.5 percent. From the above perspective, the Sn content preferably falls within a range of 0.1 to 2.5 percent, more preferably within a range of 0.1 to 1.5 percent, and still more preferably, a range of 0.5 to 1.0 percent. Here, the term “Sn oxide” means oxides such as SnO and SnO2 that have melted into the glass, irrespective of the valence of Sn. The Sn oxide content is the total content of oxides such as SnO and SnO2.


Ce oxide is desirably incorporated to enhance the clarifying effect. However, when 3.5 percent is exceeded, it reacts strongly with the refractory material and platinum constituting the melt vessel, and reacts strongly with the metal mold used to mold the glass. This increases impurities, negatively affecting the surface state. Accordingly, the Ce oxide content is 0.1 to 3.5 percent. The Ce content desirably falls within a range of 0.5 to 2.5 percent, preferably within a range of 0.5 to 1.5 percent, and still more preferably, within a range of 0.5 to 1.0 percent. Here, the term “Ce oxide” means oxides such as CeO2 and Ce2O3 that have melted into the glass, irrespective of the valence of Ce. The Ce oxide content is the total content of oxides such as CeO2 and Ce2O3.


Sn and Ce serve to produce crystal nuclei when preparing crystalline glass. Since the glass in the present invention is employed in a substrate comprised of amorphous glass, it is desirable that no crystals precipitate during heating. Thus, the addition of excessive amounts of Sn oxide and Ce oxide is to be avoided.


As set forth above, the addition of Sn and Ce increases the Young's modulus of the glass. Increasing the Young's modulus affords good fluttering resistance during high-speed rotation of a magnetic recording medium equipped with a substrate made from glass III.


Further, the addition of Sn and Ce as set forth above permits the stable production of thinner blanks in the course of press molding glass melt into disk-shaped substrate blanks, making it possible to reduce the sheet thickness tolerance of the glass blanks.


Further, the addition of Ce makes it possible to use the emission of blue fluorescence when glass III is irradiated with light of short wavelength, such as UV light, to readily distinguish between substrates comprised of glass III and substrates made from glass to which no Ce has been added, which are identical in appearance and otherwise difficult to visually distinguish. That is, by irradiating these two types of substrates with UV light and checking for the presence of fluorescence, it is possible to distinguish between them without analyzing the composition of the glasses. As a result, in the course of producing magnetic recording media with substrates comprised of multiple types of glass, this test can be used to avoid problems caused by contamination of substrates comprised of heterogeneous glass.


Further, by irradiating light of short wavelength, such as UV light, onto a substrate comprised of glass III, it is possible to check relatively easily for the presence of foreign matter on the substrate surface.


A desirable form of glass III of the present invention comprises:


MgO 0 to 10 percent;


CaO 0 to 10 percent;


SrO 0 to 5 percent;


BaO 0 to 5 percent;


B2O3 0 to 3 percent; and


P2O5 0 to 1 percent.


In the above desirable form of glass III, the various contents and total contents of MgO, CaO, SrO, BaO, B2O3, P2O5, and ZnO; the ratio of the ZrO2 content to the total content of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2; and the like are identical to those of the desirable form of glass II.


Sulfates can be added as clarifying agents to glass III in a range of 0 to 1 percent. However, they present a risk of unmelted material in the glass melt being scattered about by blowing, causing a sharp increase in foreign material in the glass. Thus, no incorporation of sulfates is desirable.


By contrast, Sn oxide and Ce oxide do not present the problem of scattering by blowing or increased foreign material, and have good effects in eliminating bubbles.


As set forth above, Sn primarily actively releases oxygen gas in high temperature states (a temperature range of about 1,400 to 1,600° C.), thereby strongly promoting clarification. Ce strongly incorporates oxygen gas in low temperature states (a temperature range of about 1,200 to 1,400° C.), fixing it as a glass component. The viscosity of the glass at 1,400° C., where the temperature range of the clarifying effect of Sn meets the temperature range of the clarifying effect of Ce, greatly affects clarification efficiency.


In glass III, to increase chemical durability, the quantity of the Si and Al components is increased and an alkali component is made an essential component. However, since the contents thereof are limited as set forth above, the viscosity of the glass at 1,400° C. exhibits an upward trend. When the viscosity of the glass becomes excessively high in the clarification temperature range, the rate at which bubbles rise in the glass decreases, and bubble elimination deteriorates.


In glass III, to simultaneously achieve enhanced chemical durability and an improved clarifying effect, the viscosity at 1,400° C. is desirably kept to 103 dPa·s or lower while employing a total content of SiO2 and Al2O3 of 65 molar percent.


From the perspective of enhancing chemical durability, in glass III, the total content of SiO2 and Al2O3 desirably ranges 65 molar percent or more, preferably 70 molar percent or more, more preferably 73 molar percent or more, still more preferably 74 molar percent or more, yet still more preferably 75 molar percent or more, and even more preferably 75.5 molar percent or more.


To increase the clarifying effect, in glass III, the viscosity at 1,400° C. is desirably kept to 1027 dPa·s or lower.


In this manner, the density of residual bubbles contained in the glass per unit mass is kept to 60 bubbles/kg or lower, desirably 40 bubbles/kg or lower, preferably 20 bubbles/kg or lower, more preferably 10 bubbles/kg or lower, still more preferably 2 bubbles/kg or lower, and even more preferably, 0 bubbles/kg. This permits the highly efficient mass production of substrates suited to high recording density magnetic recording media.


The method for manufacturing glass III, that is, a third form of the method for manufacturing a glass for a magnetic recording medium substrate of the present invention (referred to as “glass manufacturing method III”) will be described next. Glass manufacturing method III is a method for manufacturing a glass for a magnetic recording medium substrate comprised of an oxide glass, characterized by: mixing a glass starting material to which Sn and Ce, are added, comprising, as converted based on the oxides, denoted as molar percentages:


SiO2 60 to 75 percent;


Al2O3 1 to 15 percent;


Li2O 0.1 to 20 percent;


Na2O 0.1 to 15 percent; and


K2O 0 to 5 percent


(wherein the total content of Li2O, Na2O, and K2O is 25 percent or lower);


so as to permit obtaining a glass containing a total quantity of Sn oxide and Ce oxide of 0.1 to 3.5 mass percent based on the total amount of the glass components, wherein the ratio of the content of Sn oxide to the total content Sn oxide and Ce oxide (content of Sn oxide/(content of Sn oxide+content of Ce oxide)) is 0.01 to 0.99, having an Sb oxide content of 0 to 0.1 percent, and comprising no As or F; melting the glass starting material; clarifying the glass melt obtained; and molding the glass melt obtained.


A desirable form of glass manufacturing method III is a method of maintaining the glass melt at 1,400 to 1,600° C., decreasing the temperature, maintaining the glass melt at 1,200 to 1,400° C., and then conducting molding.


Maintaining the glass melt at 1,400 to 1,600° C. lowers the viscosity of the glass, creating a state where bubbles in the glass tend to rise, and produces a clarification-enhancing effect based on the release of oxygen by Sn. Subsequently decreasing the temperature of the glass melt and maintaining it at 1,200 to 1,400° C. markedly enhances bubble elimination by taking advantage of oxygen incorporation by Ce.


In glass manufacturing method III, in which Sn and Ce are employed in combination in the glass melt, a glass characteristic in the form of a viscosity of 103 dPa·s at 1,400° C. and a synergistic effect based on the presence of both Sn and Ce markedly enhance bubble elimination.


Denoting the period of maintenance at 1,400 to 1,600° C. as TH and the period of maintenance at 1,200 to 1,400° C. as TL, it is desirable to keep TL/TH to 0.5 or less, preferably 0.2 or less. Increasing TH relative to TL in this manner facilitates the discharging of gases within the glass to the exterior. To promote the gas incorporating effect of Ce within the glass, TL/TH is desirably greater than 0.01, preferably greater than 0.02, more preferably greater than 0.03, and still more preferably, greater than 0.04.


To increase the individual bubble eliminating effects of Sn and Ce, the temperature difference in the course of dropping the temperature from within the range of 1,400 to 1,600° C. to within the range of 1,200 to 1,400° C. is desirably 30° C. or greater, preferably 50° C. or greater, more preferably 80° C. or greater, still more preferably 100° C. or greater, and even more preferably, 150° C. or greater. The upper limit of the temperature difference is 400° C.


In glass manufacturing method III, the quantities of Sn and Ce added are desirably established to yield a density of residual bubbles within the glass of 60 bubbles/kg or lower. The density of residual bubbles in the glass can be further reduced by utilizing a characteristic of the glass in the form of its viscosity of 103 dPa·s or lower at 1,400° C. In glass manufacturing method III, the quantities of Sn and Ce added are desirably established to yield a density of residual bubbles of 40 bubbles/kg or lower. The quantities of Sn and Ce added are preferably established to yield a density of residual bubbles of 20 bubbles/kg or lower. The quantities of Sn and Ce added are more preferably established to yield a density of residual bubbles of 10 bubbles/kg or lower. The quantities of Sn and Ce added are still more preferably established to yield a density of residual bubbles of 2 bubbles/kg or lower. The quantities of Sn and Ce added are particularly preferably established to yield a density of residual bubbles of 0 bubbles/kg. Even when residual bubbles are present, the size of all of the bubbles can be kept to 0.3 mm or less.


In glass manufacturing method III, that is, the method for manufacturing glass III, as well, the melting vat, in which the glass starting materials are heated and vitrified, and the clarifying vat are comprised of a refractory material such as electrocasting bricks, sintered bricks, or the like. The operating vat and the connecting pipe linking the clarifying vat and the operating vat, and the outflow pipe, are desirably comprised of platinum or a platinum alloy (referred to as a “platinum-based material”). The molten material within the melting vat where the starting material is vitrified, and the glass melt within the clarifying vat reaching the maximum temperature in the glass manufacturing process, both exhibit highly corrosive properties. Although platinum-based materials exhibit good resistance to corrosion, they corrode when they come into contact with highly corrosive glass, mixing into the glass as a solid platinum material. Since the solid platinum material exhibits resistance to corrosion, platinum that has mixed into the glass as a solid material does not completely melt into the glass, but remains as foreign matter in the molded glass. However, the refractory material that corrodes will mix into the glass, melting into the glass and tending not to remain as foreign matter. Accordingly, the melting vat and clarifying vat are desirably manufactured of a refractory material. When the operating vat is made of a refractory material, the surface of the refractory material melts into the glass melt, generating striae in the glass which was homogenized, rendering it heterogeneous. The temperature of the operating vat reaches 1,400° C. or lower, and the corrosiveness of the glass decreases. Thus, the operating vat, connecting pipe, and outflow pipe are desirably comprised of platinum-based material that tends not to melt into the glass. The stirring apparatus that stirs and homogenizes the glass melt in the operating vat is also desirably comprised of a platinum-based material.


Halogens other than F, such as CI, Br, and I, are desirably not added to glass III. These halogens also volatize from the glass melt, producing striae, which are undesirable in the formation of a flat substrate surface.


Since Pb, Cd, and the like negatively affect the environment, their incorporation is also desirably avoided in glass III.


In glass III, the incorporation of Sn in the form of SnO2 is desirable for effectively releasing oxygen gas at high temperature.


From the perspectives of enhancing bubble elimination and inhibiting contamination by foreign matter, glass III for use in a magnetic recording medium substrate of the present invention is suited to production of quantities of glass melt of 10 liters or more, that is, production in which 10 liters or more of a glass melt is held in a heat resistant container. It is also suited to production of quantities of glass melt of 40 liters or more.


[Acid Resistance and Alkali Resistance]

Glasses I, II, and III desirably have an acid resistant property in the form of an etching rate of 3.0 nm/minute or less when immersed in a 0.5 volume percent hydrogenfluosilicic acid (H2SiF) aqueous solution maintained at 50° C., and an alkali resistant property in the form of an etching rate of 0.1 nm/minute or less when immersed in a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. Preferably, they possess both this acid resistant property and alkali resistant property.


In manufacturing a magnetic recording medium substrate, organic material contaminating the surface of the glass is removed by an acid treatment, after which the adhesion of foreign matter is prevented by an alkali treatment to achieve an extremely clean substrate. A substrate comprised of a glass having the above-described acid resistance and alkali resistance can be maintained in a state of extremely high surface flatness despite the acid treatment and alkali treatment.


The acid resistance of glasses I, II, and III is desirably an etching rate when immersed in a 0.5 volume percent hydrogenfluosilicic acid (H2SiF) aqueous solution maintained at 50° C. of 2.5 nm/minute or less, preferably 2.0 nm/minute or less, and more preferably, 1.8 nm/minute or less. The alkali resistance is desirably an etching rate when immersed in a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. of 0.09 nm/minute or less, preferably 0.08 nm/minute or less.


In the present invention, the etching rate is defined as the depth of the glass surface that is removed per unit time. For example, in the case of a glass substrate, it is the depth of the glass substrate removed per unit time. The method of measuring the etching rate is not specifically limited. The following method is an example. First, the glass is processed into a substrate shape (flat shape). To prepare a non-etched portion, part of the glass substrate is subjected to mask processing. The glass substrate in that state is then immersed in the above hydrogenfluosilicic acid aqueous solution or potassium hydroxide aqueous solution. After being immersed for a unit time, the glass substrate is pulled out of the aqueous solution and the amount of the difference (etching difference) between the masked portion and the portion without a mask is determined. In this manner, the amount of etching (etching rate) per unit time is obtained.


Methods of manufacturing glasses I, II, and III will be described next. First, glass starting materials such as oxides, carbonates, nitrates, sulfates, and hydroxides, as well as clarifying agents such as SnO2 and CeO2 are weighed out and mixed to obtain a mixed starting material that will yield the desired composition. This starting material is heated in a refractory furnace and melted, clarified, and homogenized at a temperature of 1,400 to 1,600° C., for example. A homogenous glass melt free of bubbles and unmelted material is prepared in this manner, caused to flow out, and molded into a prescribed shape to obtain the above-described glass.


[Chemically Strengthened Glass]

The glass for a magnetic recording medium substrate of the present invention is also suitable as a chemically strengthened glass. Glasses I, II, and III are chemically strengthened, for example, by immersing a piece of glass that has been processed into a disk shape in a molten alkali salt. Sodium nitrate molten salt, potassium nitrate molten salt, or a mixed molten salt of the two can be employed as the molten salt. The term “chemical strengthening treatment” refers to bringing a glass substrate into contact with a chemical strengthening treatment solution (molten salt) to replace some of the ions in the glass substrate with larger ions that are contained in the chemical strengthening treatment solution to chemically strengthen the glass substrate. When the glass is immersed in molten salt, Li ions in the vicinity of the surface are replaced with Na ions and K ions in the molten salt, and Na ions in the vicinity of the glass surface are replaced with K ions in the molten salt, forming a compressive stress layer in the substrate surface. The temperature of the molten salt during chemical strengthening is higher than the strain point of the glass but lower than the glass transition temperature, and is desirably within a temperature range at which the molten salt does not thermally decompose. Since the molten salt is recycled, as the concentrations of the various alkali ions in the molten salt change, trace quantities of glass components other than Li and Na leach out. As a result, the processing conditions move outside the above-stated optimal ranges. This variation in chemical strengthening due to such changes over time in the molten salt can be reduced by adjusting the composition of the glass constituting the substrate as set forth above. It can also be reduced by setting the concentration of K ions in the molten salt high. The fact that chemical strengthening processing has been conducted can be confirmed by observation of a cross-section of the glass (a cut surface of the processed layer) by the Babinet method, by measuring the distribution in the depth direction of alkali ions (such as Li+, Na+, and K+) from the glass surface; and the like.


[The Magnetic Recording Medium Substrate]

The magnetic recording medium substrate of the present invention is comprised of above-described glass I, II, or III. In a glass substrate comprised of glass I, II, or III, the number of residual bubbles, from just one part in several tens to several percent that of conventional glasses, is extremely small. This permits a substrate with excellent surface flatness.


When residual bubbles are present in a substrate, even without appearing on the substrate surface, they diminish the mechanical strength of the substrate. Since glass in which residual bubbles are absent, or are present in an extremely small number, is employed in the present invention, a substrate having good mechanical strength and good impact resistance is provided.


Since the substrate is comprised of glass I, II, or III, all of which have good chemical durability, high surface flatness is maintained even after conducting cleaning to remove foreign matter.


Since glass I, II, or III is employed, all of which have good chemical durability and exhibit little leaching out of alkali metal components, a substrate exhibiting little leaching out of alkalis due to chemical strengthening and good impact resistance is obtained based on the present invention.


The bending strength is generally employed as an indicator of the impact resistance of the magnetic recording medium substrate. The present invention provides a glass substrate having a bending strength of, for example, 10 kg or greater, desirably 15 kg or greater, and preferably, 20 kg or greater. The bending strength is obtained as the value of the load at the point where the substrate is damaged when a steel ball is placed in a hole in the center of a substrate positioned on a holder as shown in FIG. 2, and the load is progressively increased by means of a load cell. Measurement can be conducted with a bending strength measuring and testing device (Shimadzu Autograph DDS-2000), for example.


Magnetic recording media, known as magnetic disks, hard disks, and the like, are suited to the internal memory devices (fixed disks and the like) of desktop computers, server-use computers, notebook computers, mobile computers, and the like; the internal memory devices of portable recording and reproducing devices that record and reproduce images and/or sound; vehicle-mounted audio recording and reproducing devices; and the like.


By way of example, the substrate of the present invention measures 1.5 mm or less, desirably 1.2 mm or less, and preferably 1 mm or less in thickness. The lower limit is desirably 0.3 mm. Such thin substrates tend to develop undulation due to chemical strengthening. However, the glass of the present invention is adjusted by balancing the various components to within a range in which undulation due to chemical strengthening tends not to develop. Thus, a thin substrate of good flatness is obtained even after chemical strengthening treatment. The substrate of the present invention may be disklike (disk-shaped), with a hole in the center portion (centerhole). The glass of the present invention reduces the variation in shape caused by the chemical strengthening treatment of the substrate, permitting the mass production of disk-shaped substrates with a low centerhole inner diameter size tolerance.


The present invention further relates to a method for manufacturing a glass substrate for use in an information-recording medium, comprising a step of mirror-surface polishing the glass substrate for a magnetic recording medium of the present invention, and a cleaning step, in which the glass is cleaned with an acid and cleaned with an alkali following mirror-surface polishing. This manufacturing method is a suitable method for manufacturing the substrate of the present invention. The specific form of this method will be described below.


First, a glass melt is cast into a heat-resistant metal mold and molded into a cylindrical piece of glass. This is annealed, the lateral surfaces thereof are ground by centerless processing or the like, and the rod is sliced to prescribed thickness to produce thin, disk-shaped substrate blanks.


Alternatively, an outflowing glass melt is severed to obtain a desired glass melt gob, which is then press molded in a pressing mold to manufacture a thin disk-shaped substrate blank. Those of Glasses I and II, to which Ce has been added, and glass III, afford the advantage of readily and thinly extending with uniform thickness when press molded. Accordingly, a thin substrate blank of low sheet thickness tolerance can be stably manufactured by press molding such glasses.


A substrate blank can also be manufactured by molding a sheet by causing a glass melt to flow out into a float bath, annealing the glass, and cutting out disk-shaped substrate blanks. Instead of a float bath, the glass melt can be made to flow out onto a flat support, and a gas cushion can be formed between the support and the glass to mold the glass into a sheet. These methods are referred to as “float methods”.


Further, instead of the above press molding and float methods, a glass blank can be manufactured by causing a glass melt to overflow from two sides of a flume-shaped mold, fusing together the glass moving along the two sides beneath the mold, pulling the glass downward to mold it into sheet glass, annealing the glass, and cutting disk-shaped substrate blanks from the sheet glass obtained. This sheet glass molding method is referred to as the “overflow down draw method” or “fusion method.”


A substrate blank produced as set forth above is drilled to provide a centerhole, the inner and outer circumferences thereof are processed, and lapping and polishing are conducted to finish a disk-shaped substrate. Subsequently, the substrate is cleaned with cleaning agents such as acids and alkalis, rinsed, dried, and subjected to the above-described chemical strengthening, as needed. A chemical strengthening treatment can also be conducted following the mirror-surface polishing step and before the cleaning step.


The substrate is exposed to acids, alkalis, and water in this series of steps. However, the glass for an information-recording medium substrate of the present invention has good acid resistance, alkali resistance, and water resistance. Thus, the surface of the substrate does not roughen, and a substrate with a flat, smooth surface is obtained. How a substrate with increased smoothness without adhering matter is obtained will be described in detail below.


As set forth above, a glass substrate for a magnetic recording medium (magnetic disk-use glass substrate) is subjected to lapping and polishing to form the surface shape of a substrate surface (main surface), which is a surface on which information is recorded. However, during polishing, for example, polishing abrasive and adhering matter are present on the main surface immediately following finishing (mirror-surface polishing). To remove these, it is necessary to clean the main surface after mirror-surface polishing. Further, for example, when conducting a chemical strengthening treatment following mirror-surface polishing, the chemical strengthening treatment ends up changing the surface shape of the main surface, or the strengthening salt adheres to the main surface, so cleaning must be conducted. Examples of this cleaning are washing with an acid and/or washing with an alkali. Both are often conducted. When the glass substrate for an information-recording medium has poor acid resistance and poor alkali resistance, the washing ends up roughening the substrate surface. When the cleaning agent is weakened to prevent roughening of the substrate surface by washing, the polishing abrasive, adhering material, strengthening salt or the like adhering to the substrate surface cannot be adequately removed. Accordingly, to reduce adhering material containing polishing abrasive and to enhance the smoothness of the substrate surface, it is necessary for a glass substrate for an information-recording medium to possess adequate acid and alkali resistance.


Recording densities have continued to climb in recent years. For example, high-density information-recording media with recording densities of 130 Gbit/inch2 or higher, preferably 200 Gbit/inch2, are in demand. Such high recording densities can be effectively achieved by reducing the amount of float of the recording and reproducing head relative to the information-recording medium. To this end, it is desirable to employ a highly smooth substrate in information-recording media. For example, to manufacture an information-recording medium with a recording density of 130 Gbit/inch2, the surface roughness (Ra) of the main surface of the glass substrate of the information-recording medium is desirably 0.25 nm or lower, preferably 0.2 nm or lower, and more preferably, 0.15 nm or lower. Achieving this surface roughness makes it possible to achieve a high recording density because the amount of float of the recording and reproducing head relative to the information-recording medium is reduced. In the present invention, the term “main surface” means a surface on which an information recording layer is provided. Since these surfaces are the surfaces of greatest area of the information-recording medium, they are called “main surfaces.” In a disk-shaped information-recording medium, they correspond to the round exterior surfaces of the disk (excluding the centerhole, when present).


The polishing abrasive employed in the above mirror-surface polishing is not specifically limited other than that it be capable of imparting a roughness Ra of 0.25 nm or lower to the main surface of the glass substrate of an information-recording medium. However, silicon dioxide is preferred. It is also desirable to employ colloidal silica, in which the silicon dioxide is in the form of a colloid, to conduct acid polishing or alkali polishing to impart a surface shape to the glass substrate.


In the above cleaning, acid cleaning is suitable from the perspective of removing organic matter adhering to the main substrate surface. Additionally, alkali cleaning is suitable from the perspective of removing inorganic matter (such as iron) adhering to the substrate surface. That is, acid cleaning and alkali cleaning are employed to remove different materials. In terms of manufacturing a glass substrate for an information-recording medium, both are desirably employed in combination, preferably with an acid cleaning step and an alkali cleaning step being conducted successively. From the perspective of controlling the charge on the glass substrate after cleaning, it is desirable to conduct cleaning with an alkali after cleaning with an acid.


Since the above glass substrate is highly resistant to acids and to alkalis, it permits the manufacturing of a glass substrate having a smooth surface with less adhered material.


[The Magnetic Recording Medium]

The present invention includes a magnetic recording medium having an information recording layer on the above magnetic recording medium substrate.


The present invention further relates to a method for manufacturing a magnetic recording medium, comprising manufacturing a glass substrate for a magnetic recording medium by the method for manufacturing a magnetic recording medium substrate of the present invention, and forming an information recording layer on the glass substrate.


The glasses of the present invention as set forth above permit the manufacturing of substrates of high surface flatness, and of good shape stability following chemical strengthening treatment. Magnetic recording media comprising the above-described substrates are suited to high-density recording. Further, since a substrate of high heating efficiency can be obtained, it is possible to manufacture magnetic recording media with good production efficiency.


As set forth above, the magnetic recording medium of the present invention is capable of catching up with high-density recording, and is particularly suitable to use as a magnetic recording medium in vertical magnetic recording methods. A magnetic recording medium suited to vertical magnetic recording methods makes it possible to provide a magnetic recording medium capable of catching up with even higher recording densities. That is, a magnetic recording medium suited to vertical magnetic recording methods can achieve even higher magnetic recording densities because it has a recording density (such as 1 Tbit/(2.5 cm)2) that is higher than the surface recording density (100 GBit/(2.5 cm)2 or higher) of magnetic recording media suited to conventional longitudinal magnetic recording methods.


The magnetic recording medium of the present invention comprises an information recording layer on the above-described glass substrate. For example, it is possible to manufacture an information-recording medium such as a magnetic disk by successively providing an underlayer, magnetic layer, protective layer, and lubricating layer and the like on the above-described glass substrate.


The information recording layer is not specifically limited other than that it be suitably selected for the type of medium. For example, it can be a Co—Cr-based (here, the term “based” means a material containing the denoted substance), Co—Cr—Pt-based, Co—Ni—Cr-based, Co—Ni—Pt-based, Co—Ni—Cr—Pt-based, or Co—Cr—Ta-based magnetic layer. An Ni layer, Ni—P layer, Cr layer, or the like can be employed as the underlayer. Specific examples of the material employed in the magnetic layer suited to high-density recording (information recording layer) are CoCrPt-based alloy materials, particularly CoCrPtB-based alloy materials. FePt-based alloy materials are also suitable. These magnetic layers are highly useful as magnetic materials, particularly in vertical magnetic recording systems. Films of CoCrPt-based alloy materials can be formed, or heat treated following film formation, at 300 to 500° C., and films of FePt-based alloy materials can be formed, or heat treated following film formation, at an elevated temperature of 500 to 600° C., to adjust the crystal orientation or crystalline structure and achieve a structure suited to high-density recording.


A nonmagnetic and/or soft magnetic underlayer can be employed as the underlayer. A nonmagnetic underlayer is principally provided to reduce the size of the crystal grains of the magnetic layer, or to control the crystal orientation of the magnetic layer. A bcc-based crystalline underlayer, such as a Cr-based underlayer, has the effect of promoting an in-plane orientation, and is thus desirable in magnetic disks employed in in-plane (longitudinal) recording methods. An hcp-based crystalline underlayer, such as a Ti-based underlayer or Ru-based underlayer, has the effect of promoting a vertical orientation, and can thus be used in magnetic disks suited to vertical magnetic recording methods. An amorphous underlayer has the effect of reducing the size of the crystal grains in the magnetic layer.


Soft magnetic underlayers are primarily employed in vertical magnetic recording disks. They have the effect of promoting magnetized pattern recording by magnetic heads on vertical magnetic recording layers (magnetic layers). To fully utilize the effects of a soft magnetic underlayer, a layer with a high saturation magnetic flux density and high magnetic transmittance is desirable. Desirable examples of such soft magnetic layer materials are Fe-based soft magnetic materials such as FeTa-based soft magnetic materials and FeTaC-based soft magnetic materials. CoZr-based soft magnetic materials and CoTaZr-based soft magnetic materials are also desirable.


A carbon film or the like can be employed as the protective layer. A lubricant such as a perfluoropolyether-based lubricant can be employed to form the lubricating layer.


One desirable form of a vertical magnetic recording disk is a magnetic disk comprised of the substrate of the present invention, upon which are successively formed films in the form of a soft magnetic underlayer, an amorphous nonmagnetic underlayer, a crystalline nonmagnetic underlayer, a vertical magnetic recording layer (magnetic layer), a protective layer, and a lubricating layer.


In the case of a magnetic recording medium suited to vertical magnetic recording methods, desirable examples of the structure of the films formed on the substrate are, on a nonmagnetic material in the form of a glass substrate: a single-layer film formed of a vertical magnetic recording layer, a two-layer film comprising a successively layered soft magnetic layer and magnetic recording layer, and a three-layer film comprising a successively layered hard magnetic layer, soft magnetic layer, and magnetic recording layer. Of these, the two-layer film and three-layer film are desirable because they are better suited to high recording densities and stably maintaining the magnetic moment.


The glass substrate for a magnetic recording medium of the present invention permits the suitable manufacturing of a magnetic disk for recording and reproduction at a surface information recording density of 200 Gbit/inch2 or greater.


An example of a magnetic disk corresponding to a surface information recording density of 200 Gbit/inch2 or greater is a magnetic disk corresponding to a vertical magnetic recording method.


When recording and reproducing information with a hard disk drive at a surface information recording density of 200 Gbit/inch2 or greater, the flying height above the magnetic disk of the magnetic head that travels by floating opposite the main surface of the magnetic disk and records and reproduces signals is 8 nm or less. The main surfaces of a magnetic disk equipped to handle this are normally in a mirror-surface state. The main surfaces of the magnetic disk are normally required to have a surface roughness Ra of 0.25 nm or lower. Based on the glass substrate for a magnetic recording medium of the present invention, it is possible to suitably manufacture a magnetic disk corresponding to a magnetic head with a flying height of 8 nm or less.


When recording and reproducing information at a surface information recording density of 200 Gbit/inch2 or higher, a dynamically controlled flying height element called a “dynamic flying height” head (“DFH head” hereinafter) is sometimes employed as the recording and reproducing element on which the magnetic head is mounted.


With a DFH head, the area around the element is heated to cause the magnetic head element to thermally expand, narrowing the gap between the magnetic head and the magnetic disk. Thus, the main surface of the magnetic disk must necessarily be a mirror surface with a surface roughness of 0.25 nm or less. Based on the glass substrate of an information-recording medium of the present invention, it is possible to suitably manufacture a magnetic disk for a DFH head.


The glass substrate for a magnetic recording medium of the present invention is amorphous glass, and permits the generation of a mirror surface of suitable surface roughness.


An implementing mode of a magnetic disk that is an information-recording medium employing the glass substrate for a magnetic recording medium of the present invention will be described below with reference to the drawings.



FIG. 1 shows an example of the configuration of a magnetic disk 10 relating to an implementing mode of the present invention. In the present implementing mode of the present invention, magnetic disk 10 comprises a glass substrate 12, an adhesive layer 14, a soft magnetic layer 16, an underlayer 18, a size reduction enhancing layer 20, a magnetic recording layer 22, a protective layer 24, and a lubricating layer 26 in this order. Magnetic recording layer 22 functions as an information recording layer for recording and reproducing information.


In magnetic disk 10, an amorphous seed layer may further be provided between soft magnetic layer 16 and underlayer 18. The term “seed layer” refers to a layer for enhancing the crystal orientation of underlayer 18. For example, when underlayer 18 is Ru, the seed layer is a layer for enhancing the C-axis orientation of the hcp crystalline structure.


Glass substrate 12 is a glass substrate on which are formed the various layers of magnetic disk 10. The above-described glass substrate for a magnetic recording medium of the present invention can be employed as this glass substrate.


The main surface of the glass substrate is desirably a mirror surface with a surface roughness Ra of 0.25 nm or less. A mirror surface with a surface roughness Rmax of 3 nm or less is desirable.


Employing such a flat mirror surface makes it possible to achieve a constant separation distance between magnetic recording layer 22, which is a vertical magnetic recording layer, and soft magnetic layer 16. Thus, it is possible to form a suitable magnetic circuit between the head, magnetic recording layer 22, and soft magnetic layer 16.


Adhesive layer 14 is a layer for enhancing adhesion between glass substrate 12 and soft magnetic layer 16. It is formed between glass substrate 12 and soft magnetic layer 16. Using adhesive layer 14 prevents separation of soft magnetic layer 16. By way of example, a Ti-containing material can be employed as the material of adhesive layer 14. In practical terms, the thickness of adhesive layer 14 is desirably 1 to 50 nm. The material of adhesive layer 14 is desirably an amorphous material.


Soft magnetic layer 16 is a layer for adjusting the magnetic circuit of magnetic recording layer 22. Soft magnetic layer 16 is not specifically limited other than that it be formed of a magnetic material exhibiting soft magnetic characteristics. For example, it desirably exhibits a magnetic characteristic in the form of a coercivity (Hc) of 0.01 to 80 Oersteds, desirably 0.01 to 50 Oersteds. Further, it desirably exhibits a magnetic characteristic in the form of a saturation magnetic flux density (Bs) of 500 to 1,920 emu/cc. Examples of the material of soft magnetic layer 16 are Fe-based and Co-based materials. For examples, materials such as Fe-based soft magnetic materials such as FeTaC-based alloys, FeTaN-based alloys, FeNi-based alloys, FeCoB-based alloys, and FeCo-based alloys; Co-based soft magnetic materials such as CoTaZr-based alloys and CoNbZr-based alloys; and FeCo-based alloy soft magnetic materials can be employed. The material of soft magnetic layer 16 is suitably an amorphous material.


The thickness of soft magnetic layer 16 is, for example, 30 to 1,000 nm, preferably 50 to 200 nm. At less than 30 nm, it is sometimes difficult to form a suitable magnetic circuit between the head, magnetic recording layer 22, and soft magnetic layer 16. At greater than 1,000 nm, the surface roughness sometimes increases. Further, at greater than 1,000 nm, film formation by sputtering is sometimes difficult.


Underlayer 18 is a layer for controlling the crystal orientation of size reduction enhancing layer 20 and magnetic recording layer 22, and contains ruthenium (Ru), for example. In the present implementing mode of the invention, underlayer 18 is formed of multiple layers. In underlayer 18, a layer containing an interface with size reduction enhancing layer 20 is formed of Ru crystal grains.


Size reduction enhancing layer 20 is a nonmagnetic layer having a granular structure. In the present implementing mode of the invention, size reduction promoting layer 20 is comprised of a nonmagnetic CoCrSiO material having a granular structure.


Size reduction enhancing layer 20 has a granular structure comprised of an oxide grain boundary portion containing SiO and a metal particle portion containing CoCr separate from the grain boundary portion.


Magnetic recording layer 22 comprises a ferromagnetic layer 32, a magnetic coupling control layer 34, and an energy exchange control layer 36 in this order on size reduction enhancing layer 20. Ferromagnetic layer 32 is a CoCrPtSiO layer with a granular structure, comprising magnetic crystal grains in the form of CoCrPt crystal grains.


Ferromagnetic layer 32 has a granular structure comprised of an oxide grain boundary portion containing SiO and a metal particle portion containing CoCrPt separate from the grain boundary portion.


Magnetic coupling control layer 34 is a coupling control layer for controlling magnetic coupling between ferromagnetic layer 32 and energy exchange control layer 36. Magnetic coupling control layer 34 is comprised of, for example, a palladium (Pd) layer or a platinum (Pt) layer. The thickness of magnetic coupling control layer 34 is, for example, 2 nm or less, preferably 0.5 to 1.5 nm.


Energy exchange control layer 36 is a magnetic layer (continuous layer) the easily magnetized axis of which is aligned in almost the same direction as ferromagnetic layer 32. By means of exchange coupling with ferromagnetic layer 32, energy exchange control layer 36 improves the magnetic recording characteristic of magnetic disk 10. Energy exchange control layer 36, for example, is comprised of multiple films in the form of alternating laminated films of cobalt (Co) or an alloy thereof and palladium (Pd) ([CoX/Pd]n), or alternating laminated films of cobalt (Co) or an alloy thereof and platinum (Pt) ([CoX/Pt]n). It is suitably 1 to 8 nm, preferably 3 to 6 nm in thickness.


Protective layer 24 is a protective layer for protecting magnetic recording layer 22 from impact with the magnetic head. Lubricating layer 26 is a layer for increasing lubrication between the magnetic head and magnetic disk 10.


A desirable method of manufacturing the various layers of magnetic disk 10 excluding lubricating layer 26 and protective layer 24 is film formation by sputtering. Formation by DC magnetron sputtering produces uniform films and is particularly desirable.


As a desirable example, protective film 24 can be formed by CVD employing a hydrocarbon as the material gas. Lubricating film 26 can be formed by dipping.


In the present mode, it is suitable to form an amorphous layer (such as adhesive layer 14) in contact with a mirror-surface amorphous glass substrate. Soft magnetic layer 16 is suitably employed as the amorphous material. Based on the present invention, it is possible to obtain a mirror-surface magnetic disk surface having a Ra of 0.25 nm or less, for example, reflecting the surface roughness of a glass substrate with a Ra of 0.25 nm or less.


The dimensions of the magnetic recording medium substrate (for example, a magnetic disk substrate) or the magnetic recording medium (for example, a magnetic disk) of the present invention are not specifically limited. However, the medium and the substrate can be reduced in size to permit a high recording density. For example, a magnetic disk substrate or a magnetic disk with a nominal diameter of 2.5 inches, or even smaller (for example, 1 inch) is suitable.


EMBODIMENTS

The present invention is described in greater detail below through embodiments. However, the present invention is not limited to the forms given in the embodiments.


Embodiment A
(1) Melting of the Glass

Starting materials such as oxides, carbonates, nitrates, and hydroxides, as well as clarifying agents such as SnO2 and CeO2 were weighed out and mixed to obtain mixed starting materials so as to obtain glasses with the compositions of No. 1-1 to No. 1-59, No. 2-1 to No. 2-59, No. 3-1 to No. 3-59, No. 4-1 to No. 4-59, No. 5-1 to No. 5-59, No. 6-1 to No. 6-59, No. 7-1 to No. 7-59, and No. 8-1 to No. 8-59 shown in Tables 1 to 8. The starting materials were charged to melting vessels; heated, melted, clarified, and stirred for 6 hours over a range of 1,400 to 1,600° C. to produce homogeneous glass melts containing neither bubbles nor unmelted material. After being maintained for 6 hours at a range of 1,400 to 1,600° C. as stated above, the temperature of each glass melt was decreased (lowered), and the glass melt was maintained for 1 hour at a range of 1,200 to 1,400° C. to markedly enhance the clarifying effect. In particular, glass melts in which Sn and Ce were both present were confirmed in the manner set forth above to exhibit extremely pronounced clarifying effects. In the glass compositions shown in Tables 1 to 8, the compositions denoted as molar percentages of oxides (with the exception that clarifying agents such as SnO2 and CeO2, denoted as mass percentages basaed on the total amount of the glass components, are added) serve as bases. Compositions in which the ratios of the atoms comprising the glass are denoted as mass percentages were obtained by conversion from the compositions serving as bases (denoted as molar percentages of oxides).


The surface of each glass obtained was polished flat and smooth. The interior of the glass was magnified and observed (40 to 100-fold) from the polished surface with an optical microscope, and the number of residual bubbles was counted. The number of residual bubbles counted was divided by the mass of the glass corresponding to the magnified area observed to obtain the density of residual bubbles.


Glasses with 0 to 2 residual bubbles/kg were ranked A. Glasses with 3 to 10 residual bubbles/kg were ranked B. Glasses with 11 to 20 residual bubbles/kg were ranked C. Glasses with 21 to 40 residual bubbles/kg were ranked D. Glasses with 41 to 60 residual bubbles/kg were ranked E. Glasses with 61 to 100 residual bubbles/kg were ranked F. Glasses with 101 or more residual bubbles/kg were ranked G. The corresponding rankings of the various glasses are given in Tables 1 to 8.


The size of the residual bubbles in each of the glasses shown in Tables 1 to 8 was 0.3 mm or less.


No crystals or unmelted starting materials were found in the glasses thus obtained.


Based on the results given in Tables 1 to 8, the relation between the quantities of Sn and Ce added and the density of residual bubbles was determined. The quantities of Sn and Ce added were adjusted so that the density of residual bubbles was at or below a desired value, and glasses were produced. It is thus possible to suppress the density of residual bubbles to a desired level.


Next, glasses were prepared by the same method as the above, with the exceptions that the temperature of glass melts that had been maintained for 15 hours at 1,400 to 1,600° C. was lowered, the glass melts were maintained for 1 to 2 hours at 1,200 to 1,400° C., and molding was conducted. The density and size of the residual bubbles were examined, and the presence of crystals and unmelted starting materials was checked. This yielded the same results as above. When the period of maintenance at 1,400 to 1,600° C. is denoted as TH and the period of maintenance at 1,200 to 1,400° C. is denoted as TL, the ratio of TL/TH for all of the above-described methods is desirably 0.5 or lower, preferably 0.2 or lower. By increasing TH relative to TL, discharge of gas present within the glass to the exterior of the glass is facilitated. However, to enhance the incorporating effect of gas in the glass by Ce, TL/TH is desirably greater than 0.01, preferably greater than 0.02, more preferably greater than 0.03, and still more preferably, greater than 0.04.


To enhance the bubble eliminating effects of Sn and Ce, the temperature difference in the course of decreasing the temperature from the 1,400 to 1,600° C. range to the 1,200 to 1,400° C. range is desirably 30° C. or greater, preferably 50° C. or greater, more preferably 80° C. or greater, still more preferably 100° C. or greater, and yet more preferably, 150° C. or greater. The upper limit of the temperature difference is 400° C.


The viscosity at 1,400° C. of each of the glasses of Tables 1 to 8 was measured by the viscosity measuring method employing a coaxial double cylinder rotating viscometer of JIS Standard Z8803.


The viscosity at 1,400° C. of each of the glasses of No. 1-1 to No. 1-59 was 300 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 2-1 to No. 2-59 was 250 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 3-1 to No. 3-59 was 400 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 4-1 to No. 4-59 was 350 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 5-1 to No. 5-59 was 300 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 6-1 to No. 6-59 was 320 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 7-1 to No. 7-59 was 200 dPa·s. And the viscosity at 1,400° C. of each of the glasses of No. 8-1 to No. 8-59 was 320 dPa·s.


Further, each of the glasses to which Ce was added was processed into a flat sheet 1 mm in thickness with two optically polished surfaces. Light was directed vertically into the optically polished surfaces. The spectral transmittance was measured, and the wavelength λ(lambda)80 at which the external transmittance become 80 percent (including the loss due to reflection at the glass surface) and the wavelength λ(lambda)5 at which it became 5 percent were measured. The following are measurement results for some of the glasses. Glass No. 1-13 (0.1565 mass percent Sn, 0.1622 mass percent Ce, 0.2 mass percent SnO2, 0.2 mass percent CeO2) has a λ80 of 355 nm and a λ5 of 327 nm. Glass No. 1-28 (0.2344 mass percent Sn, 0.1620 mass percent Ce, 0.3 mass percent SnO2, 0.2 mass percent CeO2) has a λ80 of 355 nm and a λ5 of 327 nm. Glass No. 1-46 (0.3895 mass percent Sn, 0.2422 mass percent Ce, 0.5 mass percent SnO2, 0.2 mass percent CeO2) has a λ80 of 360 nm and a λ5 of 335 nm.


This shows that as the quantity of Ce added was increased, the absorption by the glass in the short wavelength range tended to increase. Along with this tendency, the fluorescent intensity of the glass when irradiated with UV light also increased. The addition of Ce is desirable in order to make it possible to distinguish glass based on the fluorescence emitted when irradiated with UV light and in order to generate adequately strong fluorescence to permit the detection of foreign matter on the glass surface. Accordingly, an examination of the relation between λ(lambda)80, λ(lambda)5, and the fluorescent intensity suited to these applications revealed that a λ80 of 320 nm or greater provided adequate fluorescent intensity. On this basis, the quantity of Ce added is desirably determined to yield a λ80 of 320 nm or greater. The quantity of Ce added is preferably determined to yield a λ80 of 330 nm or greater. And the quantity of Ce added is more preferably determined to yield a λ80 of 350 nm or greater. Similarly, for λ5, the quantity of Ce added is desirably determined to yield a λ5 of 300 nm or greater. The quantity of Ce added is preferably determined to yield a λ5 of 310 nm or greater. The quantity of Ce added is more preferably determined to yield a λ5 of 320 nm or greater. And the quantity of Ce added is still more preferably determined to yield a λ5 of 330 nm or greater.


From the perspective of ready distinction and detection based on fluorescence, the quantity of CeO2 added is desirably 0.1 mass percent or greater, preferably 0.2 mass percent or greater, and more preferably, 0.3 mass percent or greater. For distinction and detection by fluorescence, when λ80 or the quantity of CeO2 added is outside the above-stated range, it is impossible to achieve an adequate fluorescent intensity. This renders distinction and detection difficult.


The Young's modulus of each of the glasses of Nos. 1-1 to 1-59 is 81 GPa or higher; that of Nos. 5-1 to 5-59 is 84 GPa or higher; and that of Nos. 7-1 to 7-59 is 84 GPa or higher. In each of the above glasses, when neither Sn nor Ce was added, or when Sb was added without adding Sn and Ce, it is possible to obtain a glass with a higher Young's modulus than when Sn and Ce are added. For each of the glasses of Nos. 2-1 to 2-59, Nos. 3-1 to 3-59, Nos. 4-1 to 4-59, Nos. 6-1 to 6-59, and Nos. 8-1 to 8-59, as well, it is possible to increase the Young's modulus by adding Sn and Ce. Increasing the Young's modulus makes it possible to achieve good fluttering resistance during high-speed rotation in magnetic recording media equipped with substrates manufactured from these glasses.


(2) Molding of the Glass

Disk-shaped substrate blanks were fabricated from the above glasses by methods A to C below. Substrate blanks were fabricated by the three methods of A to C from the glasses of Nos. 1-1 to 1-59. For the other glasses, substrate blanks were fabricated by method A. For the glasses of Nos. 1-1 to 1-59, the results of residual bubbles and etching rates given in the tables are the results for the substrate blanks fabricated by method A. The same holds true for the results for the substrate blanks fabricated by methods B and C.


(Method A)

The above-described glass melt that had been clarified and homogenized was made to flow at a constant rate out of a pipe and received in a lower mold for press molding. The glass melt flowing out was cut with a cutting blade to obtain a glass melt gob of prescribed weight in the lower mold. The lower mold carrying the glass melt gob was immediately conveyed downward from the pipe. An upper mold facing the lower mold and a sleeve mold were employed to press mold the glass melt gob into a thin, disk shape 66 mm in diameter and 1.2 mm in thickness. The press-molded article was cooled to a temperature at which it did not deform, removed from the mold, and annealed to obtain a substrate blank. In the above molding, multiple lower molds were employed to successively mold the glass melt flowing out into disk-shaped substrate blanks. Since the glass contained prescribed quantities of Sn and Ce, particularly Ce, the glass extended more readily to a uniform thickness during press molding than glass that did not contain these additives. When glass blanks 1.2 mm or less in thickness were produced in quantity, it was possible to reduce the tolerance of the thickness of the glass blanks, permitting improved production efficiency in the glass blank processing step, described further below.


(Method B)

The above-described glass melt that had been clarified and homogenized was continuously cast from above into the through-holes of a heat-resistant casting mold equipped with cylindrical through-holes, molded into a cylindrical shape, and removed from beneath the through-holes. The glass that was removed was annealed. A multiwire saw was then employed to slice the glass at regular intervals in a direction perpendicular to the cylindrical axis thereof to fabricate disk-shaped substrate blanks.


(Method C)

The above-described glass melt was caused to flow out onto a float bath and molded into sheets (molded by the float method). After annealing, disk-shaped pieces of glass were cut from the sheet glass, yielding substrate blanks.


(Method D)

The above-described glass melt was molded into glass sheets by the overflow down draw method (fusion method) and annealed. Disk-shaped pieces of glass were then cut from the sheet glass, yielding substrate blanks.


(3) Substrate Fabrication

A grindstone was used to form throughholes in the center of substrate blanks obtained by each of the above-described methods. Outer circumference grinding processing was conducted. The edge surfaces (inner circumference, outer circumference) were polished with brushes while rotating the disk-shaped pieces of glass to achieve a maximum surface roughness (Rmax) of about 1.0 micrometer and an arithmetic average roughness (Ra) of about 0.3 micrometer. Next, abrasive particles with #1000-grit were employed to grind the glass substrate surfaces to a degree of flatness of 3 micrometers, an Rmax of about 2 micrometers, and an Ra of about 0.2 micrometer on the main surface. Here, the term “degree of flatness” refers to the distance (difference in height) in a vertical direction (direction vertical to the surface) between the highest portion and the lowest portion of the substrate surface. This was measured with a flatness measuring device. Rmax and Ra were measured for a 5×5 micrometer rectangular area with an atomic force microscope (AFM) (a Nanoscope made by Digital Instruments). Next, a preliminary polishing step was conducted with a polishing device capable of polishing both main surfaces of 100 to 200 glass substrates at once. A hard polisher was employed as the polishing pad. A polishing pad that had been preloaded with zirconium oxide and cerium oxide was employed as the polishing pad.


The polishing solution in the preliminary polishing step was prepared by mixing cerium oxide abrasive grains with an average particle diameter of 1.1 micrometers in water. Polishing grains with a grain diameter exceeding 4 micrometers were eliminated in advance. Measurement of the polishing solution revealed that the largest polishing grains contained in the polishing solution were 3.5 micrometers, the average value was 1.1 micrometers, and the D50 value was 1.1 micrometers.


Additionally, the load applied to the glass substrates was 80 to 100 g/cm2. The thickness removed from the surface portion of the glass substrates was set to 20 to 40 micrometers.


Next, a mirror-surface polishing step was conducted with a planetary gear-type polishing device capable of polishing both main surfaces of 100 to 200 glass substrates at once. A soft polisher was employed as the polishing pad.


The polishing solution in the mirror-surface polishing step was prepared by adding sulfuric acid and tartaric acid to ultrapure water, and then further adding colloidal silica particles with a grain diameter of 40 nm. In this process, the sulfuric acid concentration in the polishing solution was adjusted to 0.15 mass percent, and the pH of the polishing solution to 2.0 or lower. The concentration of tartaric acid was adjusted to 0.8 mass percent, and the content of colloidal silica particles to 10 mass percent.


In the course of mirror-surface polishing processing, the pH value of the polishing solution did not vary, and could be kept approximately constant. In the present embodiment, the polishing solution that was fed onto the surfaces of the glass substrates was recovered by means of a drain, cleaned by removing foreign material with a meshlike filter, and then reused by being fed back onto the glass substrate.


The polishing rate in the mirror-surface polishing step was 0.25 micrometer/minute. This was found to be an advantageous polishing processing rate under the above-stated conditions. The polishing processing rate was calculated by dividing the amount of reduction (processing removed amount) in the thickness of the glass substrate required for finishing into a prescribed mirror surface by the time required for polishing processing.


Next, the glass substrates were cleaned with an alkali by being immersed in a 3 to 5 mass percent concentration NaOH aqueous solution. This cleaning was conducted with the application of ultrasound. Cleaning was further conducted by successive immersion in cleaning vats of a neutral cleaning agent, pure water, pure water, isopropyl alcohol, isopropyl alcohol (steam drying). The surfaces of the substrates following cleaning were observed by AFM (Nanoscope, made by Digital Instruments) (a rectanglar area 5×5 micrometers was measured), revealing that no colloidal silica polishing grains had adhered. Nor was any foreign matter in the form of stainless steel, iron, or the like discovered. Nor was any increase in the roughness of the substrate surfaces observed following cleaning.


Portions of the glass substrates that had been fabricated were subjected to a masking treatment to protect the protions from etching. The glass substrates in this state were immersed in a 0.5 volume percent hydrogenfluosilicic acid aqueous solution maintained at 50° C. or a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. for a prescribed period. Subsequently, the glass substrates were withdrawn from the various aqueous solutions. The difference (etching difference) between the masked portions and the portions without masks was measured, and then divided by the immersion time to calculate the amount of etching (etching rate) per unit time. The acid etching rates and alkali etching rates obtained are given in the tables. Etching rates were measured for the glasses of Nos. 1-1 to 1-59, Nos. 2-1 to 2-59, and Nos. 7-1 to 7-59. Each of the glasses of Nos. 1-1 to 1-59 and Nos. 2-1 to 2-59 had an acid etching rate of 3.0 nm/minute or less and an alkali etching rate of 0.1 nm/minute or less. This indicates good acid resistance and alkali resistance. By contrast, although the various glasses of Nos. 7-1 to 7-59 had good alkali resistance, they exhibited poor acid resistance.


In the same manner as the various glasses of Nos. 1-1 to 1-59 and Nos. 2-1 to 2-59, the various glasses of Nos. 3-1 to 3-59, Nos. 4-1 to 4-59, and Nos. 6-1 to 6-59 also exhibited acid etching rates of 3.0 nm/minute or less and alkali etching rates of 0.1 nm/minute or less, indicating good acid resistance and alkali resistance.


Next, potassium nitrate (60 mass percent) and sodium nitrate (40 mass percent) were mixed and heated to 375° C. to prepare a chemical strengthening salt. Glass substrates that had been cleaned and preheated to 300° C. were immersed for 3 hours in this salt to conduct a chemical strengthening treatment. This treatment caused lithium ions and sodium ions on the surface of the glass substrates to be replaced with sodium ions and potassium ions, respectively, in the chemical strengthening salt, thereby chemically strengthening the glass substrates. The thickness of the compressive stress layer formed in the surfaces of the glass substrates was about 100 to 200 micrometers. Following chemical strengthening, the glass substrates were rapidly cooled by immersion in a vat of water at 20° C. and maintained there for about 10 minutes.


Next, the rapidly cooled glass substrates were immersed in sulfuric acid that had been heated to about 40° C., and cleaned while applying ultrasound. Subsequently, the glass substrates were cleaned with a 0.5 percent (volume percent) hydrogenfluosilicic acid (H2SiF) aqueous solution followed by a 1 mass percent potassium hydroxide aqueous solution. Through the above process, a magnetic disk glass substrate 12 was manufactured.


The magnetic disk glass substrate was then examined. Atomic force microscopic (AFM) measurement (a 5×5 micrometer rectangular area was measured) of the surface roughness of the magnetic disk glass substrate revealed a maximum peak height (Rmax) of 1.5 nm and an arithmetic average roughness (Ra) of 0.15 nm. The surface was in a clean mirror-surface state, free of the presence of foreign material hindering magnetic head flying, and free of foreign matter causing thermal asperity impediments. No increase in the roughness of the substrate surface was observed following cleaning. Next, the bending strength was measured. The bending strength was obtained as the value of the load when the glass substrate was damaged when a load was applied to the glass substrate as shown in FIG. 2 using a bending strength measuring and testing device (Shimadzu Autograph DDS-2000). The bending strength obtained, at 24.15 kg, was satisfactory.


In the above description, acid cleaning and alkali cleaning were conducted after chemical strengthening, but it is also possible to conduct acid cleaning and alkali cleaning after the mirror-surface polishing step.


For the various glasses shown in Tables 1 to 8, the substrates fabricated by adding Ce to the glass were irradiated with UV light. When observed in a darkroom, they were visually observed to emit blue fluorescence. This fluorescence could be used to determine whether or not foreign matter, such as residual abrasive or minute dust particles, had adhered to the substrate surface. The presence of blue fluorescence due to Ce could also be used to determine whether heterogeneous glass substrates in which no Ce had been added had been mixed in with the glass substrates to which Ce had been added.


A magnetic disk 10 was fabricated using the glass substrate 12 that had been thus obtained, and tested in a hard disk drive. FIG. 1 shows a typical film configuration (cross-section) on substrate 12.


First, a film-forming device in which a vacuum had been drawn was employed to successively form adhesive layer 14 and soft magnetic layer 16 in an argon atmosphere by DC magnetron sputtering.


Adhesive layer 14 was formed as a 20 nm amorphous CrTi layer using a CrTi target. Soft magnetic layer 16 was formed as a 200 nm amorphous CoTaZr layer (Co: 88 atomic percent, Ta: 7 atomic percent, Zr: 5 atomic percent) using a CoTaZr target.


Magnetic disk 10, on which films up to soft magnetic layer 16 had been formed, was removed from the film-forming device. The surface roughness thereof was measured as set forth above, revealing a smooth mirror surface with an Rmax of 2.1 nm and an Ra of 0.20 nm. Measurement of the magnetic characteristics with a vibrating sample magnetometer (VSM) revealed a coercivity (Hc) of 2 Oersteds and a saturation magnetic flux density of 810 emu/cc. This indicated suitable soft magnetic characteristics.


Next, a single-wafer static opposed-type film-forming device was employed to successively form an underlayer 18, granular structure size reduction enhancing layer 20, granular structure ferromagnetic layer 32, magnetic coupling control layer 34, energy exchange control layer 36, and protective film 24 in an argon atmosphere. In the present embodiment, underlayer 18 had a two-layer structure comprised of a first layer and a second layer.


In this process, a layer 10 nm in thickness of amorphous NiTa (Ni: 40 atomic percent, Ta: 10 atomic percent) was first formed on the disk substrate as the first layer of underlayer 18, followed by the formation of a Ru layer 10 to 15 nm in thickness as the second layer.


Next, a nonmagnetic CoCr—SiO2 target was employed to form size reduction enhancing layer 20 comprised of a 2 to 20 nm hcp crystalline structure. A CoCrPt—SiO2 hard magnetic material target was then employed to form ferromagnetic layer 32 comprised of a 15 nm hcp crystalline structure. The composition of the target for fabricating ferromagnetic layer 32 was Co: 62 atomic percent; Cr: 10 atomic percent; Pt: 16 atomic percent, and SiO2: 12 atomic percent. A magnetic coupling control layer 34 in the form of a Pd layer was then formed, and an energy exchange control layer 36 in the form of a [CoB/Pd]n layer was formed.


CVD employing ethylene as the material gas was then used to form protective film 24 comprised of carbon hydride. The use of hydrogenated carbon increased film hardness, making it possible to protect magnetic recording layer 22 from impact with the magnetic heads.


Subsequently, lubricating layer 26 comprised of perfluoropolyether (PFPE) was formed by dip coating. Lubricating layer 26 was 1 nm in thickness. A vertical magnetic recording medium in the form of magnetic disk 10 suited to vertical magnetic recording methods was obtained by the above manufacturing process. The roughness of the surface obtained was measured in the same manner as above, revealing a smooth mirror surface with an Rmax of 2.2 nm and an Ra of 0.21 nm.


Magnetic disk 10 that was obtained was loaded onto a 2.5-inch loading/unloading hard disk drive. The magnetic head mounted on the hard disk drive was a dynamic flying height (abbreviated as “DFH”) magnetic head. The flying height of the magnetic head relative to the magnetic disk was 8 nm.


A recording and reproducing test was conducted at a recording density of 200 Gbits/inch2 in the recording and reproducing region of the main surface of the magnetic disk using this hard disk drive, revealing good recording and reproducing characteristics. During the test, no crash faults or thermal asperity faults were generated.


Next, a load unload (“LUL” hereinafter) test was conducted with the hard disk drive.


The LUL test is conducted with 2.5-inch hard disk drive rotating at 5,400 rpm and a magnetic head with a flying height of 8 nm. The above-described magnetic head was employed. The shield element was comprised of NiFe alloy. The magnetic disk was loaded on the magnetic disk device, LUL operations were repeatedly conducted with the above magnetic head, and the LUL cycle durability was measured.


Following the LUL durability test, the surface of the magnetic disk and the surface of the magnetic head are examined visually and by optical microscopy to check for abnormalities such as scratches and grime. In the LUL durability test, a durability of 400,000 or more LUL cycles without failure is required, with a durability of 600,000 cycles or more being particularly desirable. In the use environment in which a hard disk drive (HDD) is normally employed, it is reported to take about 10 years of use to exceed 600,000 LUL cycles.


When the LUL test was implemented, magnetic disk 10 met the 600,000 cycle or more standard. Following the LUL test, magnetic disk 10 was removed and inspected, revealing no abnormalities such as scratches or grime. No was any precipitation of alkali metal components observed.


Comparative Example A

Next, the 40 glasses of Comparative Examples 1-1 to 1-5, Comparative Examples 2-1 to 2-5, Comparative Examples 3-1 to 3-5, Comparative Examples 4-1 to 4-5, Comparative Examples 5-1 to 5-5, Comparative Examples 6-1 to 6-5, Comparative Examples 7-1 to 7-5, and Comparative Examples 8-1 to 8-5 shown in Tables 1 to 8 were fabricated.


Only Sb was added as a clarifying agent in the glasses of Comparative Examples 1-1 to 1-8. Sn and an excess quantity of Sb were added as clarifying agents in the glasses of Comparative Examples 1-2 to 8-2. An excess quantity of Sn was added as clarifying agent in the glasses of Comparative Examples 1-3 to 8-3. An excess quantity of Ce was added as clarifying agent in the glasses of Comparative Examples 1-4 to 8-4. And excess quantities of Sn and Ce were added as clarifying agents in the glasses of Comparative Examples (Com.Ex.) 1-5 to 8-5.


All of the glasses of the comparative examples had residual bubbles exceeding 100 bubbles/kg. Localized pitting attributed to residual bubbles was observed on the surface of glass substrates fabricated by the same methods as in the embodiments using these glasses, and the impact resistance of the substrates was inferior to that of the embodiments.
















TABLE 1







Component
1-1
1-2
1-3
1-4
1-5
1-6
1-7


















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000



SnO2 + CeO2
0.1
0.101
0.105
0.11
0.15
0.2
0.2


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
29
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5
76.5














Rank on bubbles
D
C
B
B
B
B
D


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
1-8
1-9
1-10
1-11
1-12
1-13

















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.2
0.2
0.2
0.2
0.2
0.2


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000



SnO2 + CeO2
0.201
0.205
0.21
0.25
0.3
0.4


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
29
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5













Rank on bubbles
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
1-14
1-15
1-16
1-17
1-18
1-19
1-20


















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000



SnO2 + CeO2
0.25
0.251
0.255
0.26
0.3
0.35
0.45


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5
76.5














Rank on bubbles
D
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
1-21
1-22
1-23
1-24
1-25
1-26

















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.25
0.3
0.3
0.3
0.3
0.3


components
CeO2
0.25
0
0.001
0.005
0.01
0.05


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667



SnO2 + CeO2
0.5
0.3
0.301
0.305
0.31
0.35


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
29
2.9
29
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5













Rank on bubbles
A
D
B
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
1-27
1-28
1-29
1-30
1-31
1-32
1-33


















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4


components
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250



SnO2 + CeO2
0.4
0.5
0.6
0.4
0.401
0.405
0.41


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5
76.5














Rank on bubbles
A
A
A
D
B
B
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
1-34
1-35
1-36
1-37
1-38
1-39

















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.4
0.4
0.4
0.4
0.4
0.5


components
CeO2
0.05
0.1
0.2
0.3
0.4
0


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000



SnO2 + CeO2
0.45
0.5
0.6
0.7
0.8
0.5


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5













Rank on bubbles
A
A
A
A
A
E


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
1-40
1-41
1-42
1-43
1-44
1-45
1-46


















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000



SnO2 + CeO2
0.501
0.505
0.51
0.55
0.6
0.7
0.8


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5
76.5














Rank on bubbles
C
C
B
B
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
1-47
1-48
1-49
1-50
1-51
1-52

















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.5
0.5
0.6
0.6
0.6
0.6


components
CeO2
0.4
0.5
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167



SnO2 + CeO2
0.9
1
0.6
0.601
0.605
0.61


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5













Rank on bubbles
A
A
E
C
C
C


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
1-53
1-54
1-55
1-56
1-57
1-58
1-59


















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6


components
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6


(mass %)
Sb2O3
0
0
0
0
0
0
0



CaO2/SnO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000



SnO2 + CeO2
0.65
0.7
0.8
0.9
1
1.1
1.2


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5
76.5
76.5














Rank on bubbles
C
B
B
B
B
B
B


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Com.
Com.
Com.
Com.
Com.


Component
Ex. 1-1
Ex. 1-2
Ex. 1-3
Ex. 1-4
Ex. 1-5
















(mol %)
SiO2
67.3
67.3
67.3
67.3
67.3



Al2O3
9.2
9.2
9.2
9.2
9.2



Li2O
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2



K2O
0.3
0.3
0.3
0.3
0.3



MgO
1.1
1.1
1.1
1.1
1.1



CaO
1.8
1.8
1.8
1.8
1.8



SrO
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0



Sb2O3
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0
0.25
1
0
1


components
CeO2
0
0
0
1
1


(mass %)
Sb2O3
0.5
0.15
0
0
0



CaO2/SnO2

0
0

1



SnO2 + CeO2
0
0.25
1
1
2


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO + BaO
2.9
2.9
2.9
2.9
2.9



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
76.5
76.5
76.5
76.5
76.5












Rank on bubbles
G
G
G
G
G


Acid etching rate
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component (mass %)
1-1
1-2
1-3
1-4
1-5
1-6
1-7





Si
30.3840
30.3837
30.3825
30.3810
30.3689
30.3537
30.3538


Al
7.9806
7.9805
7.9802
7.9798
7.9766
7.9726
7.9726


Li
1.8075
1.8075
1.8074
1.8073
1.8066
1.8057
1.8057


Na
8.2781
8.2780
8.2777
8.2773
8.2740
8.2698
8.2699


K
0.3771
0.3771
0.3771
0.3771
0.3769
0.3767
0.3767


Mg
0.4298
0.4298
0.4297
0.4297
0.4296
0.4293
0.4293


Ca
1.1597
1.1596
1.1596
1.1595
1.1591
1.1585
1.1585


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4664
1.4664
1.4663
1.4663
1.4657
1.4650
1.4650


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0785
0.0786
0.0785
0.0785
0.0785
0.0784
0.1568


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.0383
48.0380
48.0369
48.0354
48.0235
48.0091
48.0117


Total
100.00
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.46
10.46
10.46
10.46
10.4575
10.4522
10.4523


Mg + Ca + Sr + Ba
1.5895
1.5894
1.5893
1.5892
1.5887
1.5878
1.5878


Zr + Ti + La +
1.4664
1.4664
1.4663
1.4663
1.4657
1.4650
1.4650


Nb + Ta + Hf


Ce/Sn
0.000
0.010
0.052
0.103
0.517
1.036
0.000


Sn + Ce
0.079
0.079
0.083
0.087
0.119
0.160
0.157


Si + Al
38.3646
38.3642
38.3627
38.3608
38.3455
38.3263
38.3264


Rank on bubbles
D
C
B
B
B
B
D


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component (mass %)
1-8
1-9
1-10
1-11
1-12
1-13





Si
30.3535
30.3523
30.3508
30.3229
30.3078
30.2776


Al
7.9725
7.9722
7.9718
7.9763
7.9724
7.9644


Li
1.8057
1.8056
1.8056
1.8066
1.8057
1.8039


Na
8.2698
8.2695
8.2690
8.2737
8.2696
8.2614


K
0.3767
0.3767
0.3767
0.3769
0.3767
0.3763


Mg
0.4293
0.4293
0.4293
0.4295
0.4293
0.4289


Ca
1.1585
1.1584
1.1584
1.1590
1.1585
1.1573


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4649
1.4649
1.4648
1.4656
1.4649
1.4635


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1568
0.1568
0.1568
0.1568
0.1567
0.1565


Ce
0.0008
0.0041
0.0081
0.0406
0.0812
0.1622


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.0115
48.0102
48.0087
47.9921
47.9773
47.9480


Total
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4522
10.4518
10.4513
10.4572
10.4520
10.4416


Mg + Ca + Sr + Ba
1.5878
1.5877
1.5877
1.5885
1.5878
1.5862


Zr + Ti + La +
1.4649
1.4649
1.4648
1.4656
1.4649
1.4635


Nb + Ta + Hf


Ce/Sn
0.005
0.026
0.052
0.259
0.518
1.036


Sn + Ce
0.158
0.161
0.165
0.197
0.238
0.319


Si + Al
38.3260
38.3245
38.3226
38.2992
38.2802
38.2420


Rank on bubbles
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)


















Component (mass %)
1-14
1-15
1-16
1-17
1-18
1-19
1-20
1-21





Si
30.3229
30.3226
30.3214
30.3199
30.3078
30.2927
30.2626
30.2476


Al
7.9763
7.9763
7.9759
7.9755
7.9724
7.9684
7.9605
7.9565


Li
1.8066
1.8066
1.8065
1.8064
1.8057
1.8048
1.8030
1.8021


Na
8.2737
8.2737
8.2733
8.2729
8.2696
8.2655
8.2573
8.2532


K
0.3769
0.3769
0.3769
0.3769
0.3767
0.3765
0.3762
0.3760


Mg
0.4295
0.4295
0.4295
0.4295
0.4293
0.4291
0.4287
0.4285


Ca
1.1590
1.1590
1.1590
1.1589
1.1585
1.1579
1.1567
1.1562


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4656
1.4656
1.4656
1.4655
1.4649
1.4642
1.4627
1.4620


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1960
0.1960
0.1960
0.1960
0.1959
0.1958
0.1955
0.1954


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0811
0.1621
0.2024


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9933
47.9930
47.9918
47.9904
47.9786
47.9640
47.9347
47.9201


Total
100.00
100.00
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4572
10.4572
10.4567
10.4562
10.4520
10.4468
10.4365
10.4313


Mg + Ca + Sr + Ba
1.5885
1.5885
1.5885
1.5884
1.5878
1.5870
1.5854
1.5847


Zr + Ti + La +
1.4656
1.4656
1.4656
1.4655
1.4649
1.4642
1.4627
1.4620


Nb + Ta + Hf


Ce/Sn
0.000
0.004
0.021
0.041
0.207
0.414
0.829
1.036


Sn + Ce
0.196
0.197
0.200
0.204
0.237
0.277
0.358
0.398


Si + Al
38.2992
38.2989
38.2973
38.2954
38.2802
38.2611
38.2231
38.2041


Rank on bubbles
D
B
A
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component (mass %)
1-22
1-23
1-24
1-25
1-26
1-27





Si
30.3078
30.3075
30.3063
30.3048
30.2927
30.2777


Al
7.9724
7.9723
7.9720
7.9716
7.9684
7.9644


Li
1.8057
1.8057
1.8056
1.8055
1.8048
1.8039


Na
8.2696
8.2695
8.2692
8.2688
8.2655
8.2614


K
0.3767
0.3767
0.3767
0.3767
0.3765
0.3763


Mg
0.4293
0.4293
0.4293
0.4293
0.4291
0.4289


Ca
1.1585
1.1585
1.1584
1.1583
1.1579
1.1573


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4649
1.4649
1.4648
1.4648
1.4642
1.4635


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2351
0.2351
0.2351
0.2350
0.2349
0.2348


Ce
0.0000
0.0008
0.0041
0.0082
0.0406
0.0811


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9800
47.9797
47.9785
47.9770
47.9654
47.9507


Total
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4520
10.4519
10.4515
10.4510
10.4468
10.4416


Mg + Ca + Sr + Ba
1.5878
1.5878
1.5877
1.5876
1.5870
1.5862


Zr + Ti + La +
1.4649
1.4649
1.4648
1.4648
1.4642
1.4635


Nb + Ta + Hf


Ce/Sn
0.000
0.003
0.017
0.035
0.173
0.345


Sn + Ce
0.235
0.236
0.239
0.243
0.276
0.316


Si + Al
38.2802
38.2798
38.2783
38.2764
38.2611
38.2421


Rank on bubbles
D
B
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)


















Component (mass %)
1-28
1-29
1-30
1-31
1-32
1-33
1-34
1-35





Si
30.2476
30.2176
30.2778
30.2775
30.2762
30.2747
30.2627
30.2477


Al
7.9565
7.9486
7.9645
7.9644
7.9641
7.9637
7.9605
7.9566


Li
1.8021
1.8003
1.8039
1.8039
1.8038
1.8037
1.8030
1.8021


Na
8.2532
8.2450
8.2614
8.2613
8.2610
8.2606
8.2573
8.2532


K
0.3760
0.3756
0.3763
0.3763
0.3763
0.3763
0.3762
0.3760


Mg
0.4285
0.4281
0.4289
0.4289
0.4289
0.4289
0.4287
0.4285


Ca
1.1562
1.1550
1.1573
1.1573
1.1573
1.1572
1.1567
1.1562


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4620
1.4606
1.4635
1.4634
1.4634
1.4633
1.4627
1.4620


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2344
0.2341
0.3130
0.3130
0.3130
0.3130
0.3128
0.3126


Ce
0.1620
0.2426
0.0000
0.0008
0.0040
0.0081
0.0405
0.0810


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9215
47.8925
47.9534
47.9532
47.9520
47.9505
47.9389
47.9241


Total
100.00
100.00
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4313
10.4209
10.4416
10.4415
10.4411
10.4406
10.4365
10.4313


Mg + Ca + Sr + Ba
1.5847
1.5831
1.5862
1.5862
1.5862
1.5861
1.5854
1.5847


Zr + Ti + La +
1.4620
1.4606
1.4635
1.4634
1.4634
1.4633
1.4627
1.4620


Nb + Ta + Hf


Ce/Sn
0.691
1.036
0.000
0.003
0.013
0.026
0.129
0.259


Sn + Ce
0.396
0.477
0.313
0.314
0.317
0.321
0.353
0.394


Si + Al
38.2041
38.1662
38.2423
38.2419
38.2403
38.2384
38.2232
38.2043


Rank on bubbles
A
A
D
B
B
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component (mass %)
1-36
1-37
1-38
1-39
1-40
1-41





Si
30.2177
30.1719
30.1420
30.2478
30.2475
30.2463


Al
7.9487
7.9484
7.9406
7.9566
7.9565
7.9562


Li
1.8003
1.8003
1.7985
1.8020
1.8021
1.8020


Na
8.2450
8.2448
8.2366
8.2532
8.2532
8.2528


K
0.3756
0.3756
0.3752
0.3760
0.3760
0.3759


Mg
0.4281
0.4280
0.4276
0.4285
0.4285
0.4285


Ca
1.1550
1.1550
1.1538
1.1562
1.1560
1.1561


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4606
1.4605
1.4592
1.4620
1.4620
1.4619


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3121
0.3120
0.3116
0.3907
0.3907
0.3907


Ce
0.1617
0.2425
0.3229
0.0000
0.0008
0.0040


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8952
47.8610
47.8320
47.9270
47.9267
47.9256


Total
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4209
10.4207
10.4103
10.4312
10.4313
10.4307


Mg + Ca + Sr + Ba
1.5831
1.5830
1.5814
1.5847
1.5845
1.5846


Zr + Ti + La +
1.4606
1.4605
1.4592
1.4620
1.4620
1.4619


Nb + Ta + Hf


Ce/Sn
0.518
0.777
1.036
0.000
0.002
0.010


Sn + Ce
0.474
0.555
0.635
0.391
0.392
0.395


Si + Al
38.1664
38.1203
38.0826
38.2044
38.2040
38.2025


Rank on bubbles
A
A
A
E
C
C


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component (mass %)
1-42
1-43
1-44
1-45
1-46
1-47
1-48





Si
30.2448
30.2328
30.2178
30.1720
30.1421
30.1124
30.0827


Al
7.9558
7.9526
7.9487
7.9485
7.9406
7.9328
7.9249


Li
1.8019
1.8012
1.8003
1.8003
1.7985
1.7967
1.7949


Na
8.2524
8.2491
8.2451
8.2448
8.2367
8.2285
8.2204


K
0.3759
0.3758
0.3756
0.3756
0.3752
0.3748
0.3745


Mg
0.4284
0.4283
0.4281
0.4280
0.4276
0.4272
0.4268


Ca
1.1561
1.1556
1.1550
1.1550
1.1538
1.1527
1.1516


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4619
1.4613
1.4606
1.4605
1.4591
1.4576
1.4562


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3906
0.3904
0.3902
0.3900
0.3895
0.3890
0.3884


Ce
0.0081
0.0405
0.0809
0.1617
0.2422
0.3224
0.4025


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9241
47.9124
47.8977
47.8636
47.8347
47.8059
47.7771


Total
100.00
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4302
10.4261
10.4210
10.4207
10.4104
10.4000
10.3898


Mg + Ca + Sr + Ba
1.5845
1.5839
1.5831
1.5830
1.5814
1.5799
1.5784


Zn + Ti + La +
1.4619
1.4613
1.4606
1.4605
1.4591
1.4576
1.4562


Nb + Ta + Hf


Ce/Sn
0.021
0.104
0.207
0.415
0.622
0.829
1.036


Sn + Ce
0.399
0.431
0.471
0.552
0.632
0.711
0.791


Si + Al
38.2006
38.1854
38.1665
38.1205
38.0827
38.0452
38.0076


Rank on bubbles
B
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)





Component (mass %)
1-49
1-50
1-51
1-52
1-53
1-54
1-55





Si
30.2179
30.2017
30.2005
30.1990
30.1870
30.1720
30.1422


Al
7.9487
7.9563
7.9560
7.9556
7.9524
7.9485
7.9406


Li
1.8003
1.8020
1.8020
1.8019
1.8012
1.8003
1.7985


Na
8.2451
8.2529
8.2526
8.2522
8.2489
8.2448
8.2367


K
0.3756
0.3760
0.3759
0.3759
0.3758
0.3756
0.3752


Mg
0.4281
0.4285
0.4284
0.4284
0.4283
0.4280
0.4276


Ca
1.1550
1.1561
1.1561
1.1560
1.1556
1.1550
1.1538


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4606
1.4620
1.4619
1.4618
1.4612
1.4605
1.4591


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4682
0.4686
0.4686
0.4686
0.4683
0.4680
0.4674


Ce
0.0000
0.0008
0.0040
0.0081
0.0404
0.0808
0.1614


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9005
47.8951
47.8940
47.8925
47.8809
47.8665
47.8375


Total
100.00
100.00
100.00
100.00
100.00
100.00
100.00


Li + Na + K
10.4210
10.4309
10.4305
10.4300
10.4259
10.4207
10.4104


Mg + Ca + Sr + Ba
1.5831
1.5846
1.5845
1.5844
1.5839
1.5830
1.5814


Zn + Ti + La +
1.4606
1.4620
1.4619
1.4618
1.4612
1.4605
1.4591


Nb + Ta + Hf


Ce/Sn
0.000
0.002
0.009
0.017
0.086
0.173
0.345


Sn + Ce
0.468
0.469
0.473
0.477
0.509
0.549
0.629


Si + Al
38.1666
38.1580
38.1565
38.1546
38.1394
38.1205
38.0828


Rank on bubbles
E
C
C
C
C
B
B


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)






















Com.



Component (mass %)
1-56
1-57
1-58
1-59
Ex. 1-1







Si
30.1124
30.0828
30.0372
30.0076
30.2480



Al
7.9328
7.9250
7.9248
7.9170
7.9566



Li
1.7967
1.7949
1.7949
1.7931
1.8021



Na
8.2286
8.2205
8.2202
8.2122
8.2533



K
0.3748
0.3745
0.3745
0.3741
0.3760



Mg
0.4272
0.4268
0.4268
0.4263
0.4285



Ca
1.1527
1.1516
1.1515
1.1504
1.1562



Sr
0.0000
0.0000
0.0000
0.0000
0.0000



Ba
0.0000
0.0000
0.0000
0.0000
0.0000



Zr
1.4576
1.4562
1.4562
1.4547
1.4620



Ti
0.0000
0.0000
0.0000
0.0000
0.0000



La
0.0000
0.0000
0.0000
0.0000
0.0000



Nb
0.0000
0.0000
0.0000
0.0000
0.0000



Ta
0.0000
0.0000
0.0000
0.0000
0.0000



Hf
0.0000
0.0000
0.0000
0.0000
0.0000



Sn
0.4667
0.4661
0.4659
0.4653
0.0000



Ce
0.2418
0.3220
0.4023
0.4822
0.0000



Sb
0.0000
0.0000
0.0000
0.0000
0.4137



O
47.8087
47.7796
47.7457
47.7171
47.9036



Total
100.00
100.00
100.00
100.00
100.00



Li + Na + K
10.4001
10.3899
10.3896
10.3794
10.4314



Mg + Ca + Sr + Ba
1.5799
1.5784
1.5783
1.5767
1.5847



Zr + Ti + La +
1.4576
1.4562
1.4562
1.4547
1.4620



Nb + Ta + Hf



Ce/Sn
0.518
0.691
0.863
1.036




Sn + Ce
0.709
0.788
0.868
0.948
0.000



Si + Al
38.0452
38.0078
37.9620
37.9246
38.2046



Rank on bubbles
B
B
B
B
G



Acid etching rate
1.7
1.7
1.7
1.7
1.7



(nm/min)



Alkaline etching rate
0.07
0.07
0.07
0.07
0.07



(nm/min)


















Com.
Com.
Com.
Com.



Component (mass %)
Ex. 1-2
Ex. 1-3
Ex. 1-4
Ex. 1-5







Si
30.2776
30.4098
30.4083
30.0671



Al
7.9644
7.9873
7.9869
7.9327



Li
1.8039
1.8091
1.8090
1.7967



Na
8.2614
8.2851
8.2847
8.2284



K
0.3763
0.3774
0.3774
0.3748



Mg
0.4289
0.4301
0.4301
0.4272



Ca
1.1573
1.1606
1.1606
1.1527



Sr
0.0000
0.0000
0.0000
0.0000



Ba
0.0000
0.0000
0.0000
0.0000



Zr
1.4635
1.4677
1.4676
1.4576



Ti
0.0000
0.0000
0.0000
0.0000



La
0.0000
0.0000
0.0000
0.0000



Nb
0.0000
0.0000
0.0000
0.0000



Ta
0.0000
0.0000
0.0000
0.0000



Hf
0.0000
0.0000
0.0000
0.0000



Sn
0.1957
0.0079
0.0079
0.7775



Ce
0.0000
0.0041
0.0081
0.0000



Sb
0.1250
0.0000
0.0000
0.0000



O
47.9460
48.0609
48.0594
47.7853



Total
100.00
100.00
100.00
100.00



Li + Na + K
10.4416
10.4716
10.4711
10.3999



Mg + Ca + Sr + Ba
1.5862
1.5907
1.5907
1.5799



Zr + Ti + La +
1.4635
1.4677
1.4676
1.4576



Nb + Ta + Hf



Ce/Sn
0.000
0.519

0.000



Sn + Ce
0.196
0.012
0.016
0.778



Si + Al
38.2420
38.3971
38.3952
37.9998



Rank on bubbles
G
G
G
G



Acid etching rate
1.7
1.7
1.7
1.7



(nm/min)



Alkaline etching rate
0.07
0.07
0.07
0.07



(nm/min)
























TABLE 2







Component
2-1
2-2
2-3
2-4
2-5
2-6
2-7


















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000



SnO2 + CeO2
0.1
0.101
0.105
0.11
0.15
0.2
0.2


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5
75.5














Rank on bubbles
D
C
B
B
B
B
D


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-8
2-9
2-10
2-11
2-12
2-13

















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.2
0.2
0.2
0.2
0.2
0.2


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000



SnO2 + CeO2
0.201
0.205
0.21
0.25
0.3
0.4


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5













Rank on bubbles
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-14
2-15
2-16
2-17
2-18
2-19
2-20


















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000



SnO2 + CeO2
0.25
0.251
0.255
0.26
0.3
0.35
0.45


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5
75.5














Rank on bubbles
D
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
007
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-21
2-22
2-23
2-24
2-25
2-26

















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.25
0.3
0.3
0.3
0.3
0.3


components
CeO2
0.25
0
0.001
0.005
0.01
0.05


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667



SnO2 + CeO2
0.5
0.3
0.301
0.305
0.31
0.35


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5













Rank on bubbles
A
D
B
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-27
2-28
2-29
2-30
2-31
2-32
2-33


















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4


components
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250



SnO2 + CeO2
0.4
0.5
0.6
0.4
0.401
0.405
0.41


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5
75.5














Rank on bubbles
A
A
A
D
B
B
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-34
2-35
2-36
2-37
2-38
2-39

















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.4
0.4
0.4
0.4
0.4
0.5


components
CeO2
0.05
0.1
0.2
0.3
0.4
0


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000



SnO2 + CeO2
0.45
0.5
0.6
0.7
0.8
0.5


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5













Rank on bubbles
A
A
A
A
A
E


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-40
2-41
2-42
2-43
2-44
2-45
2-46


















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000



SnO2 + CeO2
0.501
0.505
0.51
0.55
0.6
0.7
0.8


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5
75.5














Rank on bubbles
C
C
B
B
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-47
2-48
2-49
2-50
2-51
2-52

















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.5
0.5
0.6
0.6
0.6
0.6


components
CeO2
0.4
0.5
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0



CeO2/SnO2
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167



SnO2 + CeO2
0.9
1
0.6
0.601
0.605
0.61


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5













Rank on bubbles
A
A
E
C
C
C


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-53
2-54
2-55
2-56
2-57
2-58
2-59


















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6


components
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000



SnO2 + CeO2
0.65
0.7
0.8
0.9
1
1.1
1.2


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5
75.5
75.5














Rank on bubbles
C
B
B
B
B
B
B


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Com.
Com.
Com.
Com.
Com.


Component
Ex. 2-1
Ex. 2-2
Ex. 2-3
Ex. 2-4
Ex. 2-5
















(mol %)
SiO2
66.2
66.2
66.2
66.2
66.2



Al2O3
9.3
9.3
9.3
9.3
9.3



Li2O
8.1
8.1
8.1
8.1
8.1



Na2O
11.2
11.2
11.2
11.2
11.2



K2O
0.4
0.4
0.4
0.4
0.4



MgO
1.5
1.5
1.5
1.5
1.5



CaO
2.3
2.3
2.3
2.3
2.3



SrO
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0



TiO2
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0
0.25
1
0
1


components
CeO2
0
0
0
1
1


(mass %)
Sb2O3
0.5
0.15
0
0
0



CeO2/SnO2

0.0000
0.0000

1.0000



SnO2 + CeO2
0
0.25
1
1
2


(mol %)
Li2O + Na2O + K2O
19.7
19.7
19.7
19.7
19.7



MgO + CaO + SrO + BaO
3.8
3.8
3.8
3.8
3.8



ZrO2 + TiO2 + La2O3 +
1.0
1.0
1.0
1.0
1.0



Nb2O5 + Ta2O5 + HfO2



SiO2 + Al2O3
75.5
75.5
75.5
75.5
75.5












Rank on bubbles
G
G
G
G
G


Acid etching rate
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-1
2-2
2-3
2-4
2-5
2-6
2-7





Si
30.0102
30.0099
30.0086
30.0069
29.9774
29.9607
29.9649


Al
8.0013
8.0012
8.0008
8.0004
8.0046
8.0001
8.0012


Li
1.8122
1.8122
1.8121
1.8120
1.8130
1.8120
1.8122


Na
8.2996
8.2995
8.2991
8.2987
8.3030
8.2984
8.2996


K
0.3781
0.3781
0.3781
0.3780
0.3782
0.3780
0.3781


Mg
0.5876
0.5876
0.5875
0.5875
0.5878
0.5875
0.5876


Ca
1.4856
1.4856
1.4855
1.4855
1.4862
1.4854
1.4856


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4702
1.4702
1.4701
1.4701
1.4708
1.4700
1.4702


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0765
0.0765
0.0765
0.0765
0.0766
0.0766
0.1531


Ce
0.0000
0.0009
0.0045
0.0090
0.0452
0.0903
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8787
47.8783
47.8772
47.8754
47.8572
47.8410
47.8475


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4899
10.4898
10.4893
10.4887
10.4942
10.4884
10.4899


Mg + Ca + Sr + Ba
2.0732
2.0732
2.0730
2.0730
2.0740
2.0729
2.0732


Zr + Ti + La +
1.4702
1.4702
1.4701
1.4701
1.4708
1.4700
1.4702


Nb + Ta + Hf


Ce/Sn
0.0000
0.0118
0.0588
0.1176
0.5901
1.1789
0.0000


Sn + Ce
0.0765
0.0774
0.0810
0.0855
0.1218
0.1669
0.1531


Si + Al
38.0115
38.0111
38.0094
38.0073
37.9820
37.9608
37.9661


Rank on bubbles
D
C
B
B
B
B
D


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-8
2-9
2-10
2-11
2-12
2-13





Si
29.9645
29.9632
29.9615
29.9482
29.9317
29.8985


Al
8.0011
8.0008
8.0003
7.9968
7.9924
7.9835


Li
1.8122
1.8121
1.8120
1.8112
1.8102
1.8082


Na
8.2995
8.2991
8.2986
8.2950
8.2904
8.2812


K
0.3781
0.3781
0.3780
0.3779
0.3777
0.3772


Mg
0.5876
0.5875
0.5875
0.5872
0.5869
0.5863


Ca
1.4856
1.4855
1.4854
1.4848
1.4840
1.4823


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4702
1.4701
1.4701
1.4694
1.4686
1.4670


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1531
0.1530
0.1530
0.1530
0.1529
0.1527


Ce
0.0009
0.0046
0.0090
0.0451
0.0902
0.1803


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8472
47.8460
47.8446
47.8314
47.8152
47.7828


Total
100.0000
100.0000
100.0000
100.0000
100.0002
100.0000


Li + Na + K
10.4898
10.4893
10.4886
10.4841
10.4783
10.4666


Mg + Ca + Sr + Ba
2.0732
2.0730
2.0729
2.0720
2.0709
2.0686


Zr + Ti + La +
1.4702
1.4701
1.4701
1.4694
1.4686
1.4670


Nb + Ta + Hf


Ce/Sn
0.0059
0.0301
0.0588
0.2948
0.5899
1.1807


Sn + Ce
0.1540
0.1576
0.1620
0.1981
0.2431
0.3330


Si + Al
37.9656
37.9640
37.9618
37.9450
37.9241
37.8820


Rank on bubbles
B
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)


















Component
2-14
2-15
2-16
2-17
2-18
2-19
2-20
2-21





Si
29.9503
29.9500
29.9487
29.9470
29.9337
29.9171
29.8923
29.8758


Al
7.9973
7.9973
7.9969
7.9965
7.9929
7.9885
7.9819
7.9774


Li
1.8113
1.8113
1.8112
1.8111
1.8103
1.8093
1.8078
1.8068


Na
8.2955
8.2954
8.2951
8.2946
8.2909
8.2863
8.2795
8.2749


K
0.3779
0.3779
0.3779
0.3779
0.3777
0.3775
0.3772
0.3770


Mg
0.5873
0.5873
0.5873
0.5872
0.5870
0.5866
0.5861
0.5858


Ca
1.4849
1.4849
1.4848
1.4847
1.4841
1.4832
1.4820
1.4812


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4695
1.4695
1.4694
1.4693
1.4687
1.4679
1.4667
1.4658


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1913
0.1912
0.1912
0.1912
0.1911
0.1910
0.1909
0.1908


Ce
0.0000
0.0009
0.0045
0.0090
0.0451
0.0903
0.1576
0.2026


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8347
47.8343
47.8330
47.8315
47.8185
47.8023
47.7780
47.7619


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4847
10.4846
10.4842
10.4836
10.4789
10.4731
10.4645
10.4587


Mg + Ca + Sr + Ba
2.0722
2.0722
2.0721
2.0719
2.0711
2.0698
2.0681
2.0670


Zr + Ti + La +
1.4695
1.4695
1.4694
1.4693
1.4687
1.4679
1.4667
1.4658


Nb + Ta + Hf


Ce/Sn
0.0000
0.0047
0.0235
0.0471
0.2360
0.4728
0.8256
1.0618


Sn + Ce
0.1913
0.1921
0.1957
0.2002
0.2362
0.2813
0.3485
0.3934


Si + Al
37.9476
37.9473
37.9456
37.9435
37.9266
37.9056
37.8742
37.8532


Rank on bubbles
D
B
A
A
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-22
2-23
2-24
2-25
2-26
2-27





Si
29.9358
29.9354
29.9341
29.9325
29.9192
29.9026


Al
7.9935
7.9934
7.9930
7.9926
7.9890
7.9846


Li
1.8105
1.8104
1.8104
1.8103
1.8095
1.8084


Na
8.2915
8.2914
8.2910
8.2906
8.2869
8.2823


K
0.3777
0.3777
0.3777
0.3777
0.3775
0.3773


Mg
0.5870
0.5870
0.5870
0.5869
0.5867
0.5863


Ca
1.4842
1.4842
1.4841
1.4840
1.4834
1.4825


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4688
1.4688
1.4687
1.4686
1.4680
1.4672


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2294
0.2294
0.2293
0.2293
0.2292
0.2291


Ce
0.0000
0.0009
0.0045
0.0090
0.0451
0.0901


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8218
47.8214
47.8202
47.8185
47.8055
47.7896


Total
100.0002
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4797
10.4795
10.4791
10.4786
10.4739
10.4680


Mg + Ca + Sr + Ba
2.0712
2.0712
2.0711
2.0709
2.0701
2.0688


Zr + Ti + La +
1.4688
1.4688
1.4687
1.4686
1.4680
1.4672


Nb + Ta + Hf


Ce/Sn
0.0000
0.0039
0.0196
0.0392
0.1968
0.3933


Sn + Ce
0.2294
0.2303
0.2338
0.2383
0.2743
0.3192


Si + Al
37.9293
37.9288
37.9271
37.9251
37.9082
37.8872


Rank on bubbles
D
B
A
A
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)

















Component
2-28
2-29
2-30
2-31
2-32
2-33
2-34





Si
29.8778
29.8285
29.9068
29.9064
29.9051
29.9034
29.8902


Al
7.9780
7.9769
7.9857
7.9856
7.9853
7.9848
7.9813


Li
1.8069
1.8067
1.8087
1.8087
1.8086
1.8085
1.8077


Na
8.2754
8.2743
8.2835
8.2834
8.2830
8.2825
8.2789


K
0.3770
0.3769
0.3773
0.3773
0.3773
0.3773
0.3771


Mg
0.5859
0.5858
0.5864
0.5864
0.5864
0.5864
0.5861


Ca
1.4813
1.4811
1.4827
1.4827
1.4827
1.4826
1.4819


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4659
1.4657
1.4674
1.4673
1.4673
1.4672
1.4666


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2289
0.2289
0.3055
0.3056
0.3055
0.3055
0.3053


Ce
0.1576
0.2476
0.0000
0.0009
0.0045
0.0090
0.0451


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7653
47.7276
47.7960
47.7957
47.7943
47.7928
47.7798


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4593
10.4579
10.4695
10.4694
10.4689
10.4683
10.4637


Mg + Ca + Sr + Ba
2.0672
2.0669
2.0691
2.0691
2.0691
2.0690
2.0680


Zr + Ti + La +
1.4659
1.4657
1.4674
1.4673
1.4673
1.4672
1.4666


Nb + Ta + Hf


Ce/Sn
0.6885
1.0817
0.0000
0.0029
0.0147
0.0295
0.1477


Sn + Ce
0.3865
0.4765
0.3055
0.3065
0.3100
0.3145
0.3504


Si + Al
37.8558
37.8054
37.8925
37.8920
37.8904
37.8882
37.8715


Rank on bubbles
A
A
D
B
B
A
A


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)





Component
2-35
2-36
2-37
2-38
2-39
2-40
2-41





Si
29.8737
29.8326
29.7996
29.7749
29.8778
29.8774
29.8761


Al
7.9769
7.9780
7.9691
7.9625
7.9780
7.9779
7.9775


Li
1.8067
1.8069
1.8049
1.8035
1.8069
1.8069
1.8068


Na
8.2743
8.2754
8.2663
8.2594
8.2754
8.2753
8.2750


K
0.3769
0.3770
0.3766
0.3762
0.3770
0.3770
0.3770


Mg
0.5858
0.5859
0.5852
0.5847
0.5859
0.5859
0.5858


Ca
1.4811
1.4813
1.4797
1.4784
1.4813
1.4813
1.4812


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4657
1.4659
1.4643
1.4631
1.4659
1.4659
1.4659


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3052
0.3052
0.3049
0.3047
0.3815
0.3815
0.3815


Ce
0.0901
0.1576
0.2474
0.3147
0.0000
0.0009
0.0045


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7636
47.7342
47.7020
47.6779
47.7703
47.7700
47.7687


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4579
10.4593
10.4478
10.4391
10.4593
10.4592
10.4588


Mg + Ca + Sr + Ba
2.0669
2.0672
2.0649
2.0631
2.0672
2.0672
2.0670


Zr + Ti + La +
1.4657
1.4659
1.4643
1.4631
1.4659
1.4659
1.4659


Nb + Ta + Hf


Ce/Sn
0.2952
0.5164
0.8114
1.0328
0.0000
0.0024
0.0118


Sn + Ce
0.3953
0.4628
0.5523
0.6194
0.3815
0.3824
0.3860


Si + Al
37.8506
37.8106
37.7687
37.7374
37.8558
37.8553
37.8536


Rank on bubbles
A
A
A
A
E
C
C


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)


















Component
2-42
2-43
2-44
2-45
2-46
2-47
2-48
2-49





Si
29.8582
29.8450
29.8284
29.8037
29.7708
29.7462
29.6970
29.8253


Al
7.9848
7.9813
7.9769
7.9702
7.9614
7.9549
7.9537
7.9760


Li
1.8085
1.8077
1.8067
1.8052
1.8032
1.8017
1.8015
1.8065


Na
8.2825
8.2788
8.2743
8.2674
8.2583
8.2515
8.2503
8.2734


K
0.3773
0.3771
0.3769
0.3766
0.3762
0.3759
0.3758
0.3769


Mg
0.5864
0.5861
0.5858
0.5853
0.5846
0.5842
0.5841
0.5857


Ca
1.4826
1.4819
1.4811
1.4799
1.4782
1.4770
1.4768
1.4809


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4672
1.4665
1.4657
1.4645
1.4629
1.4617
1.4615
1.4656


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3819
0.3817
0.3815
0.3812
0.3807
0.3804
0.3804
0.4768


Ce
0.0090
0.0451
0.0901
0.1575
0.2472
0.3143
0.4041
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7616
47.7488
47.7326
47.7085
47.6765
47.6524
47.6148
47.7329


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0002
100.0000
100.0000


Li + Na + K
10.4683
10.4636
10.4579
10.4492
10.4377
10.4291
10.4276
10.4568


Mg + Ca + Sr + Ba
2.0690
2.0680
2.0669
2.0652
2.0628
2.0612
2.0609
2.0666


Zr + Ti + La +
1.4672
1.4665
1.4657
1.4645
1.4629
1.4617
1.4615
1.4656


Nb + Ta + Hf


Ce/Sn
0.0236
0.1182
0.2362
0.4132
0.6493
0.8262
1.0623
0.0000


Sn + Ce
0.3909
0.4268
0.4716
0.5387
0.6279
0.6947
0.7845
0.4768


Si + Al
37.8430
37.8263
37.8053
37.7739
37.7322
37.7011
37.6507
37.8013


Rank on bubbles
B
B
A
A
A
A
A
E


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
















Component
2-50
2-51
2-52
2-53
2-54
2-55





Si
29.8250
29.8237
29.8220
29.8088
29.7924
29.7677


Al
7.9759
7.9756
7.9751
7.9716
7.9672
7.9606


Li
1.8065
1.8064
1.8063
1.8055
1.8045
1.8030


Na
8.2733
8.2729
8.2725
8.2688
8.2643
8.2574


K
0.3769
0.3769
0.3768
0.3767
0.3765
0.3762


Mg
0.5857
0.5857
0.5857
0.5854
0.5851
0.5846


Ca
1.4809
1.4809
1.4808
1.4801
1.4793
1.4781


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4656
1.4655
1.4654
1.4648
1.4640
1.4628


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4768
0.4768
0.4767
0.4765
0.4763
0.4759


Ce
0.0009
0.0045
0.0090
0.0450
0.0899
0.1573


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7325
47.7311
47.7297
47.7168
47.7005
47.6764


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4567
10.4562
10.4556
10.4510
10.4453
10.4366


Mg + Ca + Sr + Ba
2.0666
2.0666
2.0665
2.0655
2.0644
2.0627


Zr + Ti + La +
1.4656
1.4655
1.4654
1.4648
1.4640
1.4628


Nb + Ta + Hf


Ce/Sn
0.0019
0.0094
0.0189
0.0944
0.1887
0.3305


Sn + Ce
0.4777
0.4813
0.4857
0.5215
0.5662
0.6332


Si + Al
37.8009
37.7993
37.7971
37.7804
37.7596
37.7283


Rank on bubbles
C
C
C
C
B
B


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)
























Com.
Com.
Com.
Com.
Com.


Component
2-56
2-57
2-58
2-59
Ex. 2-1
Ex. 2-2
Ex. 2-3
Ex. 2-4
Ex. 2-5





Si
29.7349
29.6908
29.6612
29.6286
29.8825
29.9082
30.0348
30.0332
29.7010


Al
7.9518
7.9521
7.9441
7.9354
7.9792
7.9861
8.0078
8.0074
7.9548


Li
1.8010
1.8011
1.7993
1.7973
1.8072
1.8088
1.8137
1.8136
1.8017


Na
8.2483
8.2486
8.2403
8.2313
8.2768
8.2839
8.3064
8.3059
8.2514


K
0.3757
0.3758
0.3754
0.3750
0.3770
0.3774
0.3784
0.3784
0.3759


Mg
0.5839
0.5840
0.5834
0.5827
0.5860
0.5865
0.5881
0.5880
0.5842


Ca
1.4764
1.4765
1.4750
1.4734
1.4815
1.4828
1.4868
1.4868
1.4770


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4611
1.4612
1.4597
1.4581
1.4662
1.4674
1.4714
1.4713
1.4617


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4753
0.4753
0.4749
0.4744
0.0000
0.1910
0.0077
0.0077
0.7608


Ce
0.2469
0.3226
0.4036
0.4926
0.0000
0.0000
0.0045
0.0090
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.3914
0.1175
0.0000
0.0000
0.0000


O
47.6447
47.6120
47.5831
47.5512
47.7522
47.7904
47.9004
47.8987
47.6315


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4250
10.4255
10.4150
10.4036
10.4610
10.4701
10.4985
10.4979
10.4290


Mg + Ca + Sr + Ba
2.0603
2.0605
2.0584
2.0561
2.0675
2.0693
2.0749
2.0748
2.0612


Zr + Ti + La +
1.4611
1.4612
1.4597
1.4581
1.4662
1.4674
1.4714
1.4713
1.4617


Nb + Ta + Hf


Ce/Sn
0.5195
0.6787
0.8499
1.0384

0.0000
0.5844

0.0000


Sn + Ce
0.7222
0.7979
0.8785
0.9670
0.0000
0.1910
0.0122
0.0167
0.7608


Si + Al
37.6867
37.6429
37.6053
37.5640
37.8617
37.8943
38.0426
38.0406
37.6558


Rank on bubbles
B
B
B
B
G
G
G
G
G


Acid etching rate
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7


(nm/min)


Alkaline etching rate
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07


(nm/min)





























TABLE 3







Component
3-1
3-2
3-3
3-4
3-5
3-6
3-7
3-8
3-9
3-10
3-11
3-12
3-13
























(mol %)
SiO2
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0



Al2O3
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0



Li2O
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2


glass
CeO2
0
0.001
0.005
0.01
0.05
0.1
0
0.001
0.005
0.01
0.05
0.1
0.2


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000



SnO2 + CeO2
0.100
0.101
0.105
0.110
0.150
0.200
0.200
0.201
0.205
0.210
0.250
0.300
0.400


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



BaO
















ZrO2 + TiO2 +
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0




















Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A





Component
3-14
3-15
3-16
3-17
3-18
3-19
3-20
3-21
3-22
3-23
3-24
3-25
3-26
























(mol %)
SiO2
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0



Al2O3
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0



Li2O
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.3


glass
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2
0.25
0
0.001
0.005
0.01
0.05


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667



SnO2 + CeO2
0.250
0.251
0.255
0.260
0.300
0.350
0.450
0.500
0.300
0.301
0.305
0.310
0.350


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



BaO
















ZrO2 + TiO2 +
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0




















Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A





Component
3-27
3-28
3-29
3-30
3-31
3-32
3-33
3-34
3-35
3-36
3-37
3-38
3-39
























(mol %)
SiO2
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0



Al2O3
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0



Li2O
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5


glass
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000



SnO2 + CeO2
0.400
0.500
0.600
0.400
0.401
0.405
0.410
0.450
0.500
0.600
0.700
0.800
0.500


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



BaO
















ZrO2 + TiO2 +
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0




















Rank on bubbles
A
A
A
D
B
B
A
A
A
A
A
A
E





Component
3-40
3-41
3-42
3-43
3-44
3-45
3-46
3-47
3-48
3-49
3-50
3-51
3-52
























(mol %)
SiO2
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0



Al2O3
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0



Li2O
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.6
0.6


glass
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0.5
0
0.001
0.005
0.01


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167



SnO2 + CeO2
0.501
0.505
0.510
0.550
0.600
0.700
0.800
0.900
1.000
0.600
0.601
0.605
0.610


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



BaO
















ZrO2 + TiO2 +
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0




















Rank on bubbles
C
C
B
B
A
A
A
A
A
E
C
C
C






























Com.
Com.
Com.
Com.
Com.


Component
3-53
3-54
3-55
3-56
3-57
3-58
3-59
Ex. 3-1
Ex. 3-2
Ex. 3-3
Ex. 3-4
Ex. 3-5























(mol %)
SiO2
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0
72.0



Al2O3
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0



Li2O
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0
0.25
1
0
1


glass
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0
0
0
1
1


components
Sb2O3
0
0
0
0
0
0
0
0.5
0.15
0
0
0


(mass %)
CeO2/SnO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000

0.0000
0.0000

1.0000



SnO2 + CeO2
0.650
0.700
0.800
0.900
1.000
1.100
1.200
0.000
0.250
1.000
1.000
2.000


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



BaO















ZrO2 + TiO2 +
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0
78.0



















Rank on bubbles
C
B
B
B
B
B
B
G
G
G
G
G























Component(mass %)
3-1
3-2
3-3
3-4
3-5
3-6
3-7
3-8
3-9
3-10
3-11
3-12
3-13





Si
33.2503
33.2500
33.2486
33.2470
33.2337
33.2171
33.2172
33.2169
33.2155
33.2139
33.2006
33.1707
33.1511


Al
5.3239
5.3238
5.3236
5.3234
5.3212
5.3186
5.3186
5.3185
5.3183
5.3181
5.3159
5.3185
5.3080


Li
1.8489
1.8489
1.8488
1.8487
1.8480
1.8471
1.8471
1.8471
1.8470
1.8469
1.8462
1.8471
1.8434


Na
7.8628
7.8627
7.8624
7.8620
7.8589
7.8550
7.8550
7.8549
7.8546
7.8542
7.8511
7.8549
7.8394


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
1.6475
1.6475
1.6474
1.6473
1.6467
1.6459
1.6459
1.6458
1.6458
1.6457
1.6450
1.6458
1.6426


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3500
1.3500
1.3499
1.3499
1.3493
1.3486
1.3487
1.3486
1.3486
1.3485
1.3480
1.3486
1.3460


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0786
0.0786
0.0786
0.0786
0.0785
0.0785
0.1569
0.1569
0.1569
0.1569
0.1568
0.1569
0.1565


Ce
0.0000
0.0008
0.0041
0.0081
0.0407
0.0813
0.0000
0.0008
0.0041
0.0081
0.0406
0.0813
0.1622


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.6380
48.6377
48.6366
48.6350
48.6230
48.6079
48.6106
48.6105
48.6092
48.6077
48.5957
48.5762
48.5508


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
99.9999
100.0000
100.0000


Li + Na + K
9.7117
9.7116
9.7112
9.7107
9.7069
9.7021
9.7021
9.7020
9.7016
9.7011
9.6973
9.7020
9.6828


Mg + Ca + Sr + Ba
1.6475
1.6475
1.6474
1.6473
1.6467
1.6459
1.6459
1.6458
1.6458
1.6457
1.6450
1.6458
1.6426


Zr + Ti + La + Nb + Hf
1.3500
1.3500
1.3499
1.3499
1.3493
1.3486
1.3487
1.3486
1.3486
1.3485
1.3480
1.3486
1.3460


Ta + Hf















Ce/Sn
0.0000
0.0102
0.0522
0.1031
0.5185
1.0357
0.0000
0.0051
0.0261
0.0516
0.2589
0.5182
1.0364


Sn + Ce
0.0786
0.0794
0.0827
0.0867
0.1192
0.1598
0.1569
0.1577
0.1610
0.1650
0.1974
0.2382
0.3187


Si + Al
38.5742
38.5738
38.5722
38.5704
38.5549
38.5357
38.5358
38.5354
38.5338
38.5320
38.5165
38.4892
38.4591


Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A
























Component(mass %)
3-14
3-15
3-16
3-17
3-18
3-19
3-20
3-21
3-22
3-23
3-24
3-25
3-26
3-27





Si
33.2007
33.2003
33.1990
33.1974
33.1707
33.1542
30.3850
30.3700
30.4303
30.4300
30.4288
30.4273
30.4152
30.4001


Al
5.3159
5.3159
5.3157
5.3154
5.3185
5.3159
8.1134
8.1094
8.1255
8.1254
8.1251
8.1247
8.1215
8.1175


Li
1.8462
1.8461
1.8461
1.8460
1.8471
1.8461
1.8376
1.8367
1.8404
1.8403
1.8403
1.8402
1.8394
1.8385


Na
7.8511
7.8510
7.8507
7.8503
7.8549
7.8510
8.4159
8.4118
8.4285
8.4284
8.4281
8.4276
8.4243
8.4201


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
1.6450
1.6450
1.6450
1.6449
1.6458
1.6450
1.5064
1.5057
1.5087
1.5087
1.5086
1.5085
1.5079
1.5072


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3480
1.3480
1.3479
1.3478
1.3486
1.3480
1.3417
1.3411
1.3437
1.3437
1.3437
1.3436
1.3431
1.3424


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1960
0.1960
0.1960
0.1960
0.1961
0.1960
0.1950
0.1948
0.2344
0.2344
0.2344
0.2344
0.2343
0.2341


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.1616
0.2019
0.0000
0.0008
0.0040
0.0081
0.0405
0.0809


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.5971
48.5969
48.5955
48.5941
48.5777
48.5626
48.0434
48.0286
48.0885
48.0883
48.0870
48.0856
48.0738
48.0592


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
9.6973
9.6971
9.6968
9.6963
9.7020
9.6971
10.2535
10.2485
10.2689
10.2687
10.2684
10.2678
10.2637
10.2586


Mg + Ca + Sr + Ba
1.6450
1.6450
1.6450
1.6449
1.6458
1.6450
1.5064
1.5057
1.5087
1.5087
1.5086
1.5085
1.5079
1.5072


Zr + Ti + La + Nb + Hf
1.3480
1.3480
1.3479
1.3478
1.3486
1.3480
1.3417
1.3411
1.3437
1.3437
1.3437
1.3436
1.3431
1.3424


Ce/Sn
0.0000
0.0041
0.0209
0.0413
0.2070
0.4143
0.8287
1.0364
0.0000
0.0034
0.0171
0.0346
0.1729
0.3456


Sn + Ce
0.1960
0.1968
0.2001
0.2041
0.2367
0.2772
0.3566
0.3967
0.2344
0.2352
0.2384
0.2425
0.2748
0.3150


Si + Al
38.5166
38.5162
38.5147
38.5128
38.4892
38.4701
38.4984
38.4794
38.5558
38.5554
38.5539
38.5520
38.5367
38.5176


Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A
A





Component(mass %)
3-28
3-29
3-30
3-31
3-32
3-33
3-34
3-35
3-36
3-37
3-38
3-39
3-40
3-41





Si
30.3700
30.3239
30.4002
30.3999
30.3987
30.3972
30.3851
30.3701
30.3240
30.2940
30.2641
30.3702
30.3699
30.3687


Al
8.1094
8.1093
8.1175
8.1174
8.1171
8.1167
8.1135
8.1094
8.1094
8.1014
8.0934
8.1095
8.1094
8.1091


Li
1.8367
1.8367
1.8385
1.8385
1.8385
1.8384
1.8376
1.8367
1.8367
1.8349
1.8331
1.8367
1.8367
1.8366


Na
8.4118
8.4117
8.4201
8.4201
8.4197
8.4193
8.4160
8.4118
8.4117
8.4034
8.3951
8.4118
8.4117
8.4114


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
1.5057
1.5057
1.5072
1.5072
1.5071
1.5070
1.5065
1.5057
1.5057
1.5042
1.5027
1.5057
1.5057
1.5056


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3411
1.3411
1.3424
1.3424
1.3424
1.3423
1.3418
1.3411
1.3411
1.3398
1.3384
1.3411
1.3411
1.3410


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0030
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2338
0.2337
0.3122
0.3122
0.3121
0.3121
0.3119
0.3117
0.3116
0.3112
0.3108
0.3897
0.3896
0.3896


Ce
0.1615
0.2422
0.0000
0.0008
0.0040
0.0081
0.0404
0.0808
0.1615
0.2419
0.3220
0.0000
0.0008
0.0040


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.0300
47.9957
48.0619
48.0615
48.0604
48.0589
48.0472
48.0327
47.9983
47.9692
47.9404
48.0353
48.0351
48.0340


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.2485
10.2484
10.2586
10.2586
10.2582
10.2577
10.2536
10.2485
10.2484
10.2383
10.2282
10.2485
10.2484
10.2480


Mg + Ca + Sr + Ba
1.5057
1.5057
1.5072
1.5072
1.5071
1.5070
1.5065
1.5057
1.5057
1.5042
1.5027
1.5057
1.5057
1.5056


Zr + Ti + La + Nb + Hf
1.3411
1.3411
1.3424
1.3424
1.3424
1.3423
1.3418
1.3411
1.3411
1.3398
1.3384
1.3411
1.3411
1.3410


Ce/Sn
0.6908
1.0364
0.0000
0.0026
0.0128
0.0260
0.1295
0.2592
0.5183
0.7773
1.0360
0.0000
0.0021
0.0103


Sn + Ce
0.3953
0.4759
0.3122
0.3130
0.3161
0.3202
0.3523
0.3925
0.4731
0.5531
0.6328
0.3897
0.3904
0.3936


Si + Al
38.4794
38.4332
38.5177
38.5173
38.5158
38.5139
38.4986
38.4795
38.4334
38.3954
38.3575
38.4797
38.4793
38.4778


Rank on bubbles
A
A
D
B
B
A
A
A
A
A
A
E
C
C





Component(mass %)
3-42
3-43
3-44
3-45
3-46
3-47
3-48
3-49
3-50
3-51
3-52
3-53
3-54
3-55





Si
30.3511
30.3391
30.3241
30.2941
30.2642
30.2344
30.1885
30.3241
30.3238
30.3226
30.3211
30.3092
30.2942
30.2643


Al
8.1166
8.1134
8.1094
8.1014
8.0934
8.0854
8.0854
8.1094
8.1093
8.1090
8.1086
8.1054
8.1014
8.0934


Li
1.8383
1.8376
1.8367
1.8349
1.8331
1.8313
1.8313
1.8367
1.8367
1.8366
1.8365
1.8358
1.8349
1.8331


Na
8.4192
8.4159
8.4117
8.4034
8.3951
8.3869
8.3868
8.4118
8.4117
8.4114
8.4109
8.4076
8.4035
8.3952


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
1.5070
1.5064
1.5057
1.5042
1.5027
1.5012
1.5012
1.5057
1.5057
1.5056
1.5056
1.5050
1.5042
1.5027


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3423
1.3417
1.3411
1.3398
1.3384
1.3371
1.3371
1.3411
1.3411
1.3410
1.3410
1.3404
1.3398
1.3384


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3900
0.3898
0.3895
0.3890
0.3885
0.3879
0.3878
0.4674
0.4674
0.4674
0.4673
0.4671
0.4668
0.4661


Ce
0.0081
0.0404
0.0807
0.1612
0.2415
0.3216
0.4019
0.0000
0.0008
0.0040
0.0081
0.0403
0.0806
0.1610


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.0274
48.0157
48.0011
47.9720
47.9431
47.9142
47.8800
48.0038
48.0035
48.0024
48.0009
47.9892
47.9746
47.9458


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.2575
10.2535
10.2484
10.2383
10.2282
10.2182
10.2181
10.2485
10.2484
10.2480
10.2474
10.2434
10.2384
10.2283


Mg + Ca + Sr + Ba
1.5070
1.5064
1.5057
1.5042
1.5027
1.5012
1.5012
1.5057
1.5057
1.5056
1.5056
1.5050
1.5042
1.5027


Zr + Ti + La + Nb + Hf
1.3423
1.3417
1.3411
1.3398
1.3384
1.3371
1.3371
1.3411
1.3411
1.3410
1.3410
1.3404
1.3398
1.3384


Ce/Sn
0.0208
0.1036
0.2072
0.4144
0.6216
0.8291
1.0364
0.0000
0.0017
0.0086
0.0173
0.0863
0.1727
0.3454


Sn + Ce
0.3981
0.4302
0.4702
0.5502
0.6300
0.7095
0.7897
0.4674
0.4682
0.4714
0.4754
0.5074
0.5474
0.6271


Si + Al
38.4677
38.4525
38.4335
38.3955
38.3576
38.3198
38.2739
38.4335
38.4331
38.4316
38.4297
38.4146
38.3956
38.3577


Rank on bubbles
B
B
A
A
A
A
A
E
C
C
C
C
B
B



















Component(mass %)
3-56
3-57
3-58
3-59
Com. Ex. 3-1
Com. Ex. 3-2
Com. Ex. 3-3
Com. Ex. 3-4
Com. Ex. 3-5





Si
30.2345
30.1886
30.1589
30.1293
30.3700
30.4005
30.5326
30.5311
30.1890


Al
8.0854
8.0854
8.0775
8.0695
8.1094
8.1175
8.1405
8.1401
8.0855


Li
1.8313
1.8313
1.8295
1.8277
1.8367
1.8386
1.8438
1.8437
1.8313


Na
8.3869
8.3869
8.3786
8.3704
8.4118
8.4202
8.4440
8.4436
8.3870


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
1.5012
1.5012
1.4998
1.4983
1.5057
1.5072
1.5115
1.5114
1.5013


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3371
1.3371
1.3358
1.3345
1.3411
1.3424
1.3462
1.3462
1.3371


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4655
0.4654
0.4647
0.4641
0.0000
0.1952
0.0078
0.0078
0.7754


Ce
0.2412
0.3215
0.4013
0.4809
0.0000
0.0000
0.0041
0.0081
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.4137
0.1234
0.0000
0.0000
0.0000


O
47.9169
47.8826
47.8539
47.8253
48.0116
48.0550
48.1695
48.1680
47.8934


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.2182
10.2182
10.2081
10.1981
10.2485
10.2588
10.2878
10.2873
10.2183


Mg + Ca + Sr + Ba
1.5012
1.5012
1.4998
1.4983
1.5057
1.5072
1.5115
1.5114
1.5013


Zr + Ti + La + Nb + Hf
1.3371
1.3371
1.3358
1.3345
1.3411
1.3424
1.3462
1.3462
1.3371


Ce/Sn
0.5182
0.6908
0.8636
1.0362

0.0000
0.5256

0.0000


Sn + Ce
0.7067
0.7869
0.8660
0.9450
0.0000
0.1952
0.0119
0.0159
0.7754


Si + Al
38.3199
38.2740
38.2364
38.1988
38.4794
38.5180
38.6731
38.6712
38.2745


Rank on bubbles
B
B
B
B
G
G
G
G
G





























TABLE 4







Component
4-1
4-2
4-3
4-4
4-5
4-6
4-7
4-8
4-9
4-10
4-11
4-12
4-13
























(mol %)
SiO2
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0



Al2O3
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0



Li2O
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0



Na2O
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5



K2O
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



MgO
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



CaO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



SrO
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2


glass
CeO2
0
0.001
0.005
0.01
0.05
0.1
0
0.001
0.005
0.01
0.05
0.1
0.2


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO +
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4



BaO
















ZrO2 + TiO2 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0




















Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A





Component
4-14
4-15
4-16
4-17
4-18
4-19
4-20
4-21
4-22
4-23
4-24
4-25
4-26
























(mol %)
SiO2
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0



Al2O3
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0



Li2O
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0



Na2O
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5



K2O
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



MgO
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



CaO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



SrO
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.3


glass
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2
0.25
0
0.001
0.005
0.01
0.05


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO +
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4



BaO
















ZrO2 + TiO2 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0




















Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A





Component
4-27
4-28
4-29
4-30
4-31
4-32
4-33
4-34
4-35
4-36
4-37
4-38
4-39
























(mol %)
SiO2
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0



Al2O3
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0



Li2O
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0



Na2O
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5



K2O
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



MgO
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



CaO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



SrO
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5


glass
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO +
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4



BaO
















ZrO2 + TiO2 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0




















Rank on bubbles
A
A
A
D
B
B
A
A
A
A
A
A
E





Component
4-40
4-41
4-42
4-43
4-44
4-45
4-46
4-47
4-48
4-49
4-50
4-51
4-52
























(mol %)
SiO2
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0



Al2O3
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0



Li2O
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0



Na2O
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5



K2O
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



MgO
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



CaO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



SrO
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.6
0.6


glass
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0.5
0
0.001
0.005
0.01


components
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0


(mass %)
CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO +
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4



BaO
















ZrO2 + TiO2 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0




















Rank on bubbles
C
C
B
B
A
A
A
A
A
E
C
C
C






























Com.
Com.
Com.
Com.
Com.


Component
4-53
4-54
4-55
4-56
4-57
4-58
4-59
Ex. 4-1
Ex. 4-2
Ex. 4-3
Ex. 4-4
Ex. 4-5























(mol %)
SiO2
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0
69.0



Al2O3
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0



Li2O
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0



Na2O
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5
11.5



K2O
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



MgO
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



CaO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



SrO
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0
0.25
1
0
1


glass
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0
0
0
1
1


components
Sb2O3
0
0
0
0
0
0
0
0.5
0.15
0
0
0


(mass %)
CeO2/SnO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000

0.0000
0.0000

1.0000


(mol %)
Li2O + Na2O + K2O
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



MgO + CaO + SrO +
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4



BaO















ZrO2 + TiO2 +
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0
76.0



















Rank on bubbles
C
B
B
B
B
B
B
G
G
G
G
G























Component(mass %)
4-1
4-2
4-3
4-4
4-5
4-6
4-7
4-8
4-9
4-10
4-11
4-12
4-13





Si
31.4964
31.4961
31.4948
31.4933
31.4807
31.4501
31.4501
31.4498
31.4486
31.4470
31.4345
31.4188
31.3875


Al
6.1394
6.1393
6.1391
6.1388
6.1363
6.1392
6.1393
6.1392
6.1390
6.1386
6.1362
6.1331
6.1270


Li
1.8050
1.8050
1.8049
1.8048
1.8041
1.8049
1.8049
1.8049
1.8049
1.8048
1.8040
1.8031
1.8013


Na
8.5939
8.5939
8.5935
8.5931
8.5896
8.5937
8.5938
8.5937
8.5933
8.5929
8.5895
8.5852
8.5767


K
0.1271
0.1271
0.1271
0.1271
0.1270
0.1271
0.1271
0.1271
0.1271
0.1271
0.1270
0.1270
0.1268


Mg
0.3950
0.3950
0.3950
0.3950
0.3948
0.3950
0.3950
0.3950
0.3950
0.3950
0.3948
0.3946
0.3942


Ca
1.3028
1.3028
1.3027
1.3026
1.3021
1.3027
1.3027
1.3027
1.3027
1.3026
1.3021
1.3014
1.3001


Sr
0.5696
0.5696
0.5696
0.5696
0.5693
0.5696
0.5696
0.5696
0.5696
0.5696
0.5693
0.5691
0.5685


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3344
1.3344
1.3343
1.3343
1.3337
1.3344
1.3344
1.3343
1.3343
1.3342
1.3337
1.3330
1.3317


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.2901
0.2901
0.2901
0.2901
0.2900
0.2901
0.2901
0.2901
0.2901
0.2901
0.2899
0.2898
0.2895


Sn
0.0785
0.0785
0.0785
0.0785
0.0785
0.0785
0.1570
0.1570
0.1570
0.1569
0.1569
0.1568
0.1565


Ce
0.0000
0.0008
0.0041
0.0081
0.0407
0.0813
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.1622


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8678
47.8674
47.8663
47.8647
47.8532
47.8334
47.8360
47.8358
47.8343
47.8331
47.8215
47.8069
47.7780


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.5260
10.5260
10.5255
10.5250
10.5207
10.5257
10.5258
10.5257
10.5253
10.5248
10.5205
10.5153
10.5048


Mg + Ca + Sr + Ba
2.2674
2.2674
2.2673
2.2672
2.2662
2.2673
2.2673
2.2673
2.2673
2.2672
2.2662
2.2651
2.2628


Zr + Ti + La + Nb + Hf
1.6245
1.6245
1.6244
1.6244
1.6237
1.6245
1.6245
1.6244
1.6244
1.6243
1.6236
1.6228
1.6212


Ce/Sn
0.0000
0.0102
0.0522
0.1032
0.5185
1.0357
0.0000
0.0051
0.0261
0.0516
0.2588
0.5179
1.0364


Si + Al
37.6358
37.6354
37.6339
37.6321
37.6170
37.5893
37.5894
37.5890
37.5876
37.5856
37.5707
37.5519
37.5145


Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A
























Component(mass %)
4-14
4-15
4-16
4-17
4-18
4-19
4-20
4-21
4-22
4-23
4-24
4-25
4-26
4-27





Si
31.4345
31.4342
31.4329
31.4314
31.4188
31.4032
31.3720
31.3564
31.4189
31.4186
31.4173
31.4157
31.4032
31.3876


Al
6.1362
6.1361
6.1359
6.1356
6.1331
6.1301
6.1240
6.1210
6.1332
6.1331
6.1329
6.1325
6.1301
6.1271


Li
1.8040
1.8040
1.8040
1.8039
1.8031
1.8022
1.8005
1.7996
1.8031
1.8031
1.8031
1.8030
1.8023
1.8014


Na
8.5895
8.5894
8.5891
8.5886
8.5852
8.5809
8.5724
8.5681
8.5852
8.5851
8.5848
8.5844
8.5810
8.5767


K
0.1270
0.1270
0.1270
0.1270
0.1270
0.1269
0.1268
0.1267
0.1270
0.1270
0.1270
0.1270
0.1269
0.1268


Mg
0.3948
0.3948
0.3948
0.3948
0.3946
0.3944
0.3940
0.3938
0.3946
0.3946
0.3946
0.3946
0.3944
0.3942


Ca
1.3021
1.3021
1.3020
1.3020
1.3014
1.3008
1.2995
1.2989
1.3014
1.3014
1.3014
1.3013
1.3008
1.3001


Sr
0.5693
0.5693
0.5693
0.5693
0.5691
0.5688
0.5682
0.5679
0.5691
0.5690
0.5690
0.5690
0.5688
0.5685


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3337
1.3337
1.3336
1.3336
1.3330
1.3324
1.3310
1.3304
1.3330
1.3330
1.3330
1.3329
1.3324
1.3317


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.2899
0.2899
0.2899
0.2899
0.2898
0.2897
0.2894
0.2892
0.2898
0.2898
0.2898
0.2898
0.2897
0.2895


Sn
0.1961
0.1961
0.1961
0.1960
0.1959
0.1958
0.1955
0.1954
0.2351
0.2351
0.2351
0.2351
0.2350
0.2348


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.1621
0.2025
0.0000
0.0008
0.0040
0.0081
0.0406
0.0811


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8229
47.8226
47.8213
47.8198
47.8084
47.7936
47.7646
47.7501
47.8096
47.8094
47.8080
47.8066
47.7948
47.7805


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.5205
10.5204
10.5201
10.5195
10.5153
10.5100
10.4997
10.4944
10.5153
10.5152
10.5149
10.5144
10.5102
10.5049


Mg + Ca + Sr + Ba
2.2662
2.2662
2.2661
2.2661
2.2651
2.2640
2.2617
2.2606
2.2651
2.2650
2.2650
2.2649
2.2640
2.2628


Zr + Ti + La + Nb + Hf
1.6236
1.6236
1.6235
1.6235
1.6228
1.6221
1.6204
1.6196
1.6228
1.6228
1.6228
1.6227
1.6221
1.6212


Ce/Sn
0.0000
0.0041
0.0209
0.0413
0.2072
0.4147
0.8292
1.0363
0.0000
0.0034
0.0170
0.0345
0.1728
0.3454


Si + Al
37.5707
37.5703
37.5688
37.5670
37.5519
37.5333
37.4960
37.4774
37.5521
37.5517
37.5502
37.5482
37.5333
37.5147


Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A
A





Component(mass %)
4-28
4-29
4-30
4-31
4-32
4-33
4-34
4-35
4-36
4-37
4-38
4-39
4-40
4-41





Si
31.3564
31.3103
31.3877
31.3874
31.3861
31.3846
31.3721
31.3565
31.3104
31.2794
31.2484
31.3566
31.3563
31.3551


Al
6.1210
6.1208
6.1271
6.1270
6.1268
6.1265
6.1240
6.1210
6.1209
6.1148
6.1088
6.1210
6.1209
6.1207


Li
1.7996
1.7995
1.8014
1.8013
1.8013
1.8012
1.8005
1.7996
1.7995
1.7978
1.7960
1.7996
1.7996
1.7995


Na
8.5682
8.5680
8.5767
8.5766
8.5763
8.5759
8.5724
8.5682
8.5680
8.5595
8.5511
8.5682
8.5681
8.5678


K
0.1267
0.1267
0.1268
0.1268
0.1268
0.1268
0.1268
0.1267
0.1267
0.1266
0.1265
0.1267
0.1267
0.1267


Mg
0.3938
0.3938
0.3942
0.3942
0.3942
0.3942
0.3940
0.3938
0.3938
0.3934
0.3931
0.3938
0.3938
0.3938


Ca
1.2989
1.2988
1.3002
1.3001
1.3001
1.3000
1.2995
1.2989
1.2988
1.2975
1.2963
1.2989
1.2989
1.2988


Sr
0.5679
0.5679
0.5685
0.5685
0.5685
0.5684
0.5682
0.5679
0.5679
0.5673
0.5668
0.5679
0.5679
0.5679


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3304
1.3304
1.3317
1.3317
1.3316
1.3316
1.3310
1.3304
1.3304
1.3290
1.3277
1.3304
1.3304
1.3303


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.2892
0.2892
0.2895
0.2895
0.2895
0.2895
0.2894
0.2892
0.2892
0.2889
0.2886
0.2892
0.2892
0.2892


Sn
0.2345
0.2344
0.3131
0.3131
0.3130
0.3130
0.3128
0.3126
0.3125
0.3121
0.3117
0.3908
0.3908
0.3908


Ce
0.1620
0.2429
0.0000
0.0008
0.0041
0.0081
0.0405
0.0810
0.1619
0.2425
0.3230
0.0000
0.0008
0.0040


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7514
47.7173
47.7831
47.7830
47.7817
47.7802
47.7688
47.7542
47.7200
47.6912
47.6620
47.7569
47.7566
47.7554


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4945
10.4942
10.5049
10.5047
10.5044
10.5039
10.4997
10.4945
10.4942
10.4839
10.4736
10.4945
10.4944
10.4940


Mg + Ca + Sr + Ba
2.2606
2.2605
2.2629
2.2628
2.2628
2.2626
2.2617
2.2606
2.2605
2.2582
2.2562
2.2606
2.2606
2.2605


Zr + Ti + La + Nb + Hf
1.6196
1.6196
1.6212
1.6212
1.6211
1.6211
1.6204
1.6196
1.6196
1.6179
1.6163
1.6196
1.6196
1.6195


Ce/Sn
0.6908
1.0363
0.0000
0.0026
0.0131
0.0259
0.1295
0.2591
0.5181
0.7770
1.0363
0.0000
0.0020
0.0102


Si + Al
37.4774
37.4311
37.5148
37.5144
37.5129
37.5111
37.4961
37.4775
37.4313
37.3942
37.3572
37.4776
37.4772
37.4758


Rank on bubbles
A
A
D
B
B
A
A
A
A
A
A
E
C
C





Component(mass %)
4-42
4-43
4-44
4-45
4-46
4-47
4-48
4-49
4-50
4-51
4-52
4-53
4-54
4-55





Si
31.3535
31.3260
31.3105
31.2795
31.2485
31.2177
31.1718
31.3106
31.3103
31.3090
31.3075
31.2951
31.2796
31.2486


Al
6.1204
6.1239
6.1209
6.1148
6.1088
6.1027
6.1026
6.1209
6.1208
6.1206
6.1203
6.1179
6.1148
6.1088


Li
1.7994
1.8004
1.7995
1.7978
1.7960
1.7942
1.7942
1.7995
1.7995
1.7995
1.7994
1.7987
1.7978
1.7960


Na
8.5674
8.5723
8.5680
8.5596
8.5511
8.5426
8.5425
8.5681
8.5680
8.5676
8.5672
8.5638
8.5596
8.5511


K
0.1267
0.1268
0.1267
0.1266
0.1265
0.1263
0.1263
0.1267
0.1267
0.1267
0.1267
0.1266
0.1266
0.1265


Mg
0.3938
0.3940
0.3938
0.3934
0.3931
0.3927
0.3927
0.3938
0.3938
0.3938
0.3938
0.3936
0.3934
0.3931


Ca
1.2987
1.2995
1.2988
1.2976
1.2963
1.2950
1.2950
1.2988
1.2988
1.2988
1.2987
1.2982
1.2976
1.2963


Sr
0.5679
0.5682
0.5679
0.5674
0.5668
0.5662
0.5662
0.5679
0.5679
0.5679
0.5679
0.5676
0.5674
0.5668


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3303
1.3310
1.3304
1.3290
1.3277
1.3264
1.3264
1.3304
1.3304
1.3303
1.3302
1.3297
1.3291
1.3277


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.2892
0.2894
0.2892
0.2889
0.2887
0.2884
0.2884
0.2892
0.2892
0.2892
0.2892
0.2891
0.2889
0.2887


Sn
0.3907
0.3910
0.3906
0.3900
0.3896
0.3891
0.3889
0.4687
0.4687
0.4687
0.4687
0.4684
0.4680
0.4675


Ce
0.0080
0.0405
0.0810
0.1617
0.2422
0.3225
0.4030
0.0000
0.0008
0.0040
0.0081
0.0404
0.0808
0.1615


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.7540
47.7370
47.7227
47.6937
47.6647
47.6362
47.6020
47.7254
47.7251
47.7239
47.7223
47.7109
47.6964
47.6674


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4935
10.4995
10.4942
10.4840
10.4736
10.4631
10.4630
10.4943
10.4942
10.4938
10.4933
10.4891
10.4840
10.4736


Mg + Ca + Sr + Ba
2.2604
2.2617
2.2605
2.2584
2.2562
2.2539
2.2539
2.2605
2.2605
2.2605
2.2604
2.2594
2.2584
2.2562


Zr + Ti + La + Nb + Hf
1.6195
1.6204
1.6196
1.6179
1.6164
1.6148
1.6148
1.6196
1.6196
1.6195
1.6194
1.6188
1.6180
1.6164


Ce/Sn
0.0205
0.1036
0.2074
0.4146
0.6217
0.8288
1.0363
0.0000
0.0017
0.0085
0.0173
0.0863
0.1726
0.3455


Si + Al
37.4739
37.4499
37.4314
37.3943
37.3573
37.3204
37.2744
37.4315
37.4311
37.4296
37.4278
37.4130
37.3944
37.3574


Rank on bubbles
B
B
A
A
A
A
A
E
C
C
C
C
B
B



















Component(mass %)
4-56
4-57
4-58
4-59
Com. Ex. 4-1
Com. Ex. 4-2
Com. Ex. 4-3
Com. Ex. 4-4
Com. Ex. 4-5





Si
31.2178
31.1719
31.1412
31.1417
31.3567
31.3870
31.5231
31.5215
31.1723


Al
6.1028
6.1027
6.0966
6.0967
6.1210
6.1269
6.1446
6.1443
6.1027


Li
1.7942
1.7942
1.7924
1.7924
1.7996
1.8013
1.8065
1.8064
1.7942


Na
8.5427
8.5425
8.5341
8.4600
8.5682
8.5765
8.6012
8.6008
8.5426


K
0.1263
0.1263
0.1262
0.1262
0.1267
0.1268
0.1272
0.1272
0.1263


Mg
0.3927
0.3927
0.3923
0.3923
0.3938
0.3942
0.3954
0.3953
0.3927


Ca
1.2950
1.2950
1.2937
1.2937
1.2989
1.3001
1.3039
1.3038
1.2950


Sr
0.5662
0.5662
0.5657
0.5657
0.5679
0.5685
0.5701
0.5701
0.5662


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.3264
1.3264
1.3251
1.3251
1.3304
1.3317
1.3355
1.3355
1.3264


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.2884
0.2884
0.2881
0.2881
0.2892
0.2895
0.2903
0.2903
0.2884


Sn
0.4668
0.4667
0.4660
0.4659
0.0000
0.1957
0.0079
0.0079
0.7776


Ce
0.2419
0.3224
0.4024
0.4828
0.0000
0.0000
0.0041
0.0081
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.4143
0.1264
0.0000
0.0000
0.0000


O
47.6388
47.6046
47.5762
47.5694
47.7333
47.7754
47.8902
47.8888
47.6156


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
10.4632
10.463CI
10.4527
10.3786
10.4945
10.5046
10.5349
10.5344
10.4631


Mg + Ca + Sr + Ba
2.2539
2.2539
2.2517
2.2517
2.2606
2.2628
2.2694
2.2692
2.2539


Zr + Ti + La + Nb + Hf
1.6148
1.6148
1.6132
1.6132
1.6196
1.6212
1.6258
1.6258
1.6148


Ce/Sn
0.5182
0.6908
0.8635
1.0363

0.0000
0.5190

0.0000


Si + Al
37.3206
37.2746
37.2378
37.2384
37.4777
37.5139
37.6677
37.6658
37.2750


Rank on bubbles
B
B
B
B
G
G
G
G
G





























TABLE 5







Component
5-1
5-2
5-3
5-4
5-5
5-6
5-7
5-8
5-9
5-10
5-11
5-12
5-13
























(mol %)
SiO2
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7



B2O3
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



Al2O3
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7



Li2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5



La2O3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0


Based on
Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


glass
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.2


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000



SnO2 + CeO2
0.1000
0.1010
0.1050
0.1100
0.1500
0.2000
0.2000
0.2010
0.2050
0.2100
0.2500
0.3000
0.4000


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
















ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4




















Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A





Component
5-14
5-15
5-16
5-17
5-18
5-19
5-20
5-21
5-22
5-23
5-24
5-25
5-26
























(mol %)
SiO2
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7



B2O3
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



Al2O3
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7



Li2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5



La2O3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0


Based on
Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


glass
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.3


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2
0.25
0
0.001
0.005
0.01
0.05


(mass %)
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667



SnO2 + CeO2
0.2500
0.2510
0.2550
0.2600
0.3000
0.3500
0.4500
0.5000
0.3000
0.3010
0.3050
0.3100
0.3500


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
















ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4




















Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A





Component
5-27
5-28
5-29
5-30
5-31
5-32
5-33
5-34
5-35
5-36
5-37
5-38
5-39
























(mol %)
SiO2
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7



B2O3
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



Al2O3
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7



Li2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5



La2O3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0


Based on
Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


glass
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5


components
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0


(mass %)
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0



CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000



SnO2 + CeO2
0.4000
0.5000
0.6000
0.4000
0.4010
0.4050
0.4100
0.4500
0.5000
0.6000
0.7000
0.8000
0.5000


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
















ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4




















Rank on bubbles
A
A
A
D
B
B
A
A
A
A
A
A
E





Component
5-40
5-41
5-42
5-43
5-44
5-45
5-46
5-47
5-48
5-49
5-50
5-51
5-52
























(mol %)
SiO2
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7



B2O3
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



Al2O3
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7



Li2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5



La2O3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0


Based on
Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


glass
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.6
0.6


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3
0.4
0.5
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0
0
0
0
0
0
0
0



CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167



SnO2 + CeO2
0.5010
0.5050
0.5100
0.5500
0.6000
0.7000
0.8000
0.9000
1.0000
0.6000
0.6010
0.6050
0.6100


(mol %)
Li2O + Na2O + K2O
18.6
18.6
18.6
18.6
118.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



MgO + CaO + SrO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
















ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0



La2O3 + Nb2O5 +
















Ta2O5 + HfO2
















SiO2 + Al2O3
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4




















Rank on bubbles
C
C
B
B
A
A
A
A
A
E
C
C
C






























Com.
Com.
Com.
Com.
Com.


Component
5-53
5-54
5-55
5-56
5-57
5-58
5-59
Ex. 5-1
Ex. 5-2
Ex. 5-3
Ex. 5-4
Ex. 5-5
























SiO2
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7
68.7



B203
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0



A12O3
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7
7.7



Li2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0



TiO2
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5



La2O3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0



SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0
0.25
1
0
1




0.05
0.1
0.2
0.3
0.4
0.5
0.6
0
0
0
1
1



CeO2/SnO2
0
0
0
0
0
0
0
0.5
0.15
0
0
0



SnO2 + CeO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000

0.0000
0.0000

1.0000



Li2O + Na2O + K2O
0.6500
0.7000
0.8000
0.9000
1.0000
1.1000
1.2000
0.0000
0.2500
1.0000
1.0000
2.0000



MgO + CaO + SrO +
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6
18.6



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2 + TiO2 +















La2O3 + Nb2O5 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0



Ta2O5 + HfO2















SiO2 + Al2O3
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4
76.4



















Rank on bubbles
C
B
B
B
B
B
B
G
G
G
G
G























Component(mass %)
5-1
5-2
5-3
5-4
5-5
5-6
5-7
5-8
5-9
5-10
5-11
5-12
5-13





Si
30.1647
30.1644
30.1632
30.1617
30.1501
30.1199
30.1200
30.1197
30.1185
30.1170
30.1054
30.0908
30.0618


B
0.6761
0.6761
0.6760
0.6760
0.6757
0.6760
0.6760
0.6760
0.6760
0.6760
0.6757
0.6754
0.6747


Al
6.4960
6.4960
6.4957
6.4954
6.4929
6.4958
6.4958
6.4958
6.4955
6.4952
6.4927
6.4896
6.4833


Li
3.0384
3.0383
3.0382
3.0381
3.0369
3.0383
3.0383
3.0383
3.0381
3.0380
3.0368
3.0353
3.0324


Na
2.5159
2.5159
2.5158
2.5156
2.5147
2.5158
2.5158
2.5158
2.5157
2.5156
2.5146
2.5134
2.5110


K
1.3447
1.3447
1.3447
1.3446
1.3441
1.3447
1.3447
1.3447
1.3446
1.3446
1.3441
1.3434
1.3421


Mg
0.3800
0.3800
0.3800
0.3799
0.3798
0.3800
0.3800
0.3800
0.3799
0.3799
0.3798
0.3796
0.3792


Ca
1.2531
1.2531
1.2531
1.2530
1.2525
1.2531
1.2531
1.2531
1.2530
1.2530
1.2525
1.2519
1.2507


Sr
0.5479
0.5479
0.5479
0.5479
0.5477
0.5479
0.5479
0.5479
0.5479
0.5479
0.5476
0.5474
0.5469


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4262
1.4261
1.4261
1.4260
1.4255
1.4261
1.4261
1.4261
1.4261
1.4260
1.4254
1.4247
1.4234


Ti
1.1228
1.1228
1.1228
1.1227
1.1223
1.1228
1.1228
1.1228
1.1227
1.1227
1.1222
1.1217
1.1206


La
2.1626
2.1625
2.1624
2.1623
2.1615
2.1625
2.1625
2.1625
2.1624
2.1623
2.1614
2.1604
2.1583


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0761
0.0761
0.0761
0.0761
0.0761
0.0761
0.1522
0.1522
0.1522
0.1522
0.1521
0.1520
0.1518


Ce
0.0000
0.0008
0.0039
0.0079
0.0394
0.0789
0.0000
0.0008
0.0039
0.0079
0.0394
0.0788
0.1573


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.7956
48.7953
48.7941
48.7927
48.7810
48.7621
48.7648
48.7645
48.7633
48.7619
48.7502
48.7356
48.7065


Total
100.0001
100.0000
100.0000
99.9999
100.0002
100.0000
100.0000
100.0002
99.9998
100.0002
99.9999
100.0000
100.0000


Li + Na + K
6.8990
6.8989
6.8987
6.8983
6.8957
6.8988
6.8988
6.8988
6.8984
6.8982
6.8955
6.8921
6.8855


Mg + Ca + Sr + Ba
2.1810
2.1810
2.1810
2.1808
2.1800
2.1810
2.1810
2.1810
2.1808
2.1808
2.1799
2.1789
2.1768


Zr + Ti + La + Nb + Ta + Hf
4.7116
4.7114
4.7113
4.7110
4.7093
4.7114
4.7114
4.7114
4.7112
4.7110
4.7090
4.7068
4.7023


Ce + Sn
0.0000
0.0105
0.0512
0.1038
0.5177
1.0368
0.0000
0.0053
0.0256
0.0519
0.2590
0.5184
1.0362


Sn + Ce
0.0761
0.0769
0.0800
0.0840
0.1155
0.1550
0.1522
0.1530
0.1561
0.1601
0.1915
0.2308
0.3091


Si + Al
36.6607
36.6604
36.6589
36.6571
36.6430
36.6157
36.6158
36.6155
36.6140
36.6122
36.5981
36.5804
36.5451


Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A
A
























Component(mass %)
5-14
5-15
5-16
5-17
5-18
5-19
5-20
5-21
5-22
5-23
5-24
5-25
5-26
5-27





Si
30.1054
30.1051
30.1040
30.1025
30.0909
30.0763
30.0473
30.0329
30.0909
30.0906
30.0895
30.0880
30.0764
30.0619


B
0.6757
0.6757
0.6757
0.6757
0.6754
0.6751
0.6744
0.6741
0.6754
0.6754
0.6754
0.6753
0.6751
0.6747


Al
6.4927
6.4926
6.4924
6.4921
6.4896
6.4864
6.4802
6.4771
6.4896
6.4895
6.4893
6.4890
6.4864
6.4833


Li
3.0368
3.0368
3.0367
3.0365
3.0353
3.0339
3.0310
3.0295
3.0354
3.0353
3.0352
3.0351
3.0339
3.0324


Na
2.5146
2.5146
2.5145
2.5144
2.5134
2.5122
2.5098
2.5086
2.5134
2.5134
2.5133
2.5132
2.5122
2.5110


K
1.3441
1.3440
1.3440
1.3439
1.3434
1.3428
1.3415
1.3408
1.3434
1.3434
1.3433
1.3433
1.3428
1.3421


Mg
0.3798
0.3798
0.3798
0.3797
0.3796
0.3794
0.3790
0.3789
0.3796
0.3796
0.3796
0.3796
0.3794
0.3792


Ca
1.2525
1.2525
1.2524
1.2524
1.2519
1.2513
1.2501
1.2495
1.2519
1.2519
1.2518
1.2518
1.2513
1.2507


Sr
0.5476
0.5476
0.5476
0.5476
0.5474
0.5471
0.5466
0.5463
0.5474
0.5474
0.5474
0.5473
0.5471
0.5469


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4254
1.4254
1.4254
1.4253
1.4247
1.4241
1.4227
1.4220
1.4247
1.4247
1.4247
1.4246
1.4241
1.4234


Ti
1.1222
1.1222
1.1222
1.1221
1.1217
1.1212
1.1201
1.1195
1.1217
1.1217
1.1216
1.1216
1.1212
1.1206


La
2.1615
2.1614
2.1613
2.1612
2.1604
2.1594
2.1573
2.1562
2.1604
2.1604
2.1603
2.1602
2.1594
2.1583


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1901
0.1901
0.1901
0.1901
0.1900
0.1899
0.1896
0.1895
0.2280
0.2280
0.2280
0.2280
0.2278
0.2277


Ce
0.0000
0.0008
0.0039
0.0079
0.0394
0.0787
0.1572
0.1964
0.0000
0.0008
0.0039
0.0079
0.0393
0.0786


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.7515
48.7512
48.7500
48.7486
48.7369
48.7224
48.6933
48.6788
48.7382
48.7379
48.7368
48.7353
48.7237
48.7091


Total
99.9999
99.9998
100.0000
100.0000
100.0000
100.0002
100.0001
100.0001
100.0000
100.0000
100.0001
100.0002
100.0001
99.9999


Li + Na + K
6.8955
6.8954
6.8952
6.8948
6.8921
6.8889
6.8823
6.8789
6.8922
6.8921
6.8918
6.8916
6.8889
6.8855


Mg + Ca + Sr + Ba
2.1799
2.1799
2.1798
2.1797
2.1789
2.1778
2.1757
2.1747
2.1789
2.1789
2.1788
2.1787
2.1778
2.1768


Zr + Ti + La + Nb + Ta + Hf
4.7091
4.7090
4.7089
4.7086
4.7068
4.7047
4.7001
4.6977
4.7068
4.7068
4.7066
4.7064
4.7047
4.7023


Ce + Sn
0.0000
0.0042
0.0205
0.0416
0.2074
0.4144
0.8291
1.0364
0.0000
0.0035
0.0171
0.0346
0.1725
0.3452


Sn + Ce
0.1901
0.1909
0.1940
0.1980
0.2294
0.2686
0.3468
0.3859
0.2280
0.2288
0.2319
0.2359
0.2671
0.3063


Si + Al
36.5981
36.5977
36.5964
36.5946
36.5805
36.5627
36.5275
36.5100
36.5805
36.5801
36.5788
36.5770
36.5628
36.5452


Rank on bubbles
D
B
A
A
A
A
A
A
D
B
A
A
A
A





Component(mass %)
5-28
5-29
5-30
5-31
5-32
5-33
5-34
5-35
5-36
5-37
5-38
5-39
5-40
5-41





Si
30.0329
29.9883
30.0620
30.0617
30.0605
30.0591
30.0475
30.0330
29.9884
29.9596
29.9309
30.0331
30.0328
30.0316


B
0.6741
0.6741
0.6747
0.6747
0.6747
0.6747
0.6744
0.6741
0.6741
0.6734
0.6728
0.6741
0.6741
0.6741


Al
6.4771
6.4769
6.4833
6.4833
6.4830
6.4827
6.4802
6.4771
6.4769
6.4707
6.4645
6.4771
6.4770
6.4768


Li
3.0295
3.0294
3.0324
3.0324
3.0323
3.0321
3.0310
3.0295
3 0294
3.0265
3.0236
3.0295
3.0295
3.0294


Na
2.5086
2.5085
2.5110
2.5110
2.5109
2.5107
2.5098
2.5086
2.5085
2.5061
2.5037
2.5086
2.5085
2.5084


K
1.3408
1.3408
1.3421
1.3421
1.3421
1.3420
1.3415
1.3408
1.3408
1.3395
1.3382
1.3408
1.3408
1.3408


Mg
0.3789
0.3789
0.3792
0.3792
0.3792
0.3792
0.3791
0.3789
0.3789
0.3785
0.3781
0.3789
0.3789
0.3789


Ca
1.2495
1.2494
1.2507
1.2507
1.2506
1.2506
1.2501
1.2495
1.2494
1.2482
1.2470
1.2495
1.2495
1.2494


Sr
0.5463
0.5463
0.5469
0.5469
0.5468
0.5468
0.5466
0.5463
0.5463
0.5458
0.5453
0.5463
0.5463
0.5463


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4220
1.4220
1.4234
1.4234
1.4233
1.4232
1.4227
1.4220
1.4220
1.4206
1.4192
1.4220
1.4220
1.4219


Ti
1.1195
1.1195
1.1206
1.1206
1.1206
1.1205
1.1201
1.1195
1.1195
1.1184
1.1174
1.1195
1.1195
1.1195


La
2.1562
2.1562
2.1583
2.1583
2.1582
2.1581
2.1573
2.1563
2.1562
2.1541
2.1521
2.1563
2.1562
2.1562


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0 0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2274
0.2273
0.3036
0.3036
0.3036
0.3035
0.3034
0.3032
0.3031
0.3027
0.3023
0.3790
0.3790
0.3789


Ce
0.1571
0.2355
0.0000
0.00018
0.0039
0.0079
0.0393
0.0785
0.1570
0.2352
0.3132
0.0000
0.0008
0.0039


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.6801
48.6469
48.7118
48.7115
48.7103
48.7089
48.6972
48.6827
48.6495
48.6206
48.5918
48.6854
48.6851
48.6839


Total
100.0000
100.0000
100.0000
100.0002
100.0000
100.0000
100.0002
100.0000
100.0000
99.9999
100.0001
100.0001
100.0000
100.0000


Li + Na + K
6.8789
6.8787
6.8855
6.8855
6.8853
6.8848
6.8823
6.8789
6.8787
6.8721
6.8655
6.8789
6.8788
6.8786


Mg + Ca + Sr + Ba
2.1747
2.1746
2.1768
2.1768
2.1766
2.1766
2.1758
2.1747
2 1746
2.1725
2.1704
2.1747
2.1747
2.1746


Zr + Ti + La + Nb + Ta + Hf
4.6977
4.6977
4.7023
4.7023
4.7021
4.7018
4.7001
4.6978
4.6977
4.6931
4.6887
4.6978
4.6977
4.6976


Ce + Sn
0.6909
1.0361
0.0000
0.0026
0.0128
0.0260
0.1295
0.2589
0.5180
0.7770
1.0361
0.0000
0.0021
0.0103


Sn + Ce
0.3845
0.4628
0.3036
0.3044
0.3075
0.3114
0.3427
0.3817
0.4601
0.5379
0.6155
0.3790
0.3798
0.3828


Si + Al
36.5100
36.4652
36.5453
36.5450
36.5435
36.5418
36.5277
36.5101
36.4653
36.4303
36.3954
36.5102
36.5098
36.5084


Rank on bubbles
A
A
D
B
B
A
A
A
A
A
A
E
C
C





Component(mass %)
5-42
5-43
5-44
5-45
5-46
5-47
5-48
5-49
5-50
5-51
5-52
5-53
5-54
5-55





Si
30.0302
30.0030
29.9885
29.9597
29.9310
29.9023
29.8718
29.9886
29.9883
29.9872
29.9857
29.9742
29.9598
29.9310


B
0.6740
0.6744
0.6741
0.6734
0.6728
0.6721
0.6724
0.6741
0.6741
0.6740
0.6740
0.6738
0.6734
0.6728


Al
6.4765
6.4801
6.4769
6.4707
6.4645
6.4583
6.4612
6.4770
6.4769
6.4766
6.4763
6.4738
6.4707
6.4645


Li
3.0292
3.0309
3.0294
3.0265
3.0236
3.0207
3.0005
3.0294
3.0294
3.0293
3.0292
3.0280
3.0265
3.0236


Na
2.5083
2.5097
2.5085
2.5061
2.5037
2.5013
2.5024
2.5085
2.5085
2.5084
2.5083
2.5073
2.5061
2.5037


K
1.3407
1.3414
1.3408
1.3395
1.3382
1.3369
1.3375
1.3408
1.3408
1.3407
1.3407
1.3402
1.3395
1.3382


Mg
0.3788
0.3790
0.3789
0.3785
0.3781
0.3778
0.3779
0.3789
0.3789
0.3788
0.3788
0.3787
0.3785
0.3781


Ca
1.2494
1.2500
1.2494
1.2482
1.2471
1.2459
1.2464
1.2495
1.2494
1.2494
1.2493
1.2489
1.2483
1.2471


Sr
0.5463
0.5466
0.5463
0.5458
0.5453
0.5447
0.5450
0.5463
0.5463
0.5463
0.5463
0.5461
0.5458
0.5453


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4219
1.4227
1.4220
1.4206
1.4192
1.4179
1.4185
1.4220
1.4220
1.4219
1.4218
1.4213
1.4206
1.4192


Ti
1.1194
1.1200
1.1195
1.1184
1.1174
1.1163
1.1168
1.1195
1.1195
1.1195
1.1194
1.1190
1.1184
1.1174


La
2.1560
2.1572
2.1562
2.1541
2.1521
2.1500
2.1510
2.1562
2.1562
2.1561
2.1560
2.1552
2.1541
2.1521


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3789
0.3791
0.3788
0.3783
0.3778
0.3773
0.3773
0.4546
0.4545
0.4545
0.4545
0.4543
0.4540
0.4534


Ce
0.0079
0.0393
0.0785
0.1568
0.2349
0.3128
0.3910
0.0000
0.0008
0.0039
0.0078
0.0392
0.0784
0.1566


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.6825
48.6666
48.6521
48.6232
48.5944
48.5657
48.5303
48.6547
48.6544
48.6533
48.6518
48.6403
48.6258
48.5970


Total
100.0000
100.0000
99.9999
99.9998
100.0001
100.0000
100.0000
100.0001
100.0000
99.9999
99.9999
100.0003
99.9999
100.0000


Li + Na + K
6.8782
6.8820
6.8787
6.8721
6.8655
6.8589
6.8404
6.8787
6.8787
6.8784
6.8782
6.8755
6.8721
6.8655


Mg + Ca + Sr + Ba
2.1745
2.1756
2.1746
2.1725
2.1705
2.1684
2.1693
2.1747
2.1746
2.1745
2.1744
2.1737
2.1726
2.1705


Zr + Ti + La + Nb + Ta + Hf
4.6973
4.6999
4.6977
4.6931
4.6887
4.6842
4.6863
4.6977
4.6977
4.6975
4.6972
4.6955
4.6931
4.6887


Ce + Sn
0.0208
0.1037
0.2072
0.4145
0.6218
0.8290
1.0363
0.0000
0.0018
0.0086
0.0172
0.0863
0.1727
0.3454


Sn + Ce
0.3868
0.4184
0.4573
0.5351
0.6127
0.6901
0.7683
0.4546
0.4553
0.4584
0.4623
0.4935
0.5324
0.6100


Si + Al
36.5067
36.4831
36.4654
36.4304
36.3955
36.3606
36.3330
36.4656
36.4652
36.4638
36.4620
36.4480
36.4305
36.3955


Rank on bubbles
B
B
A
A
A
A
A
E
C
C
C
C
B
B



















Component(mass %)
5-56
5-57
5-58
5-59
Com. Ex. 5-1
Com. Ex. 5-2
Com. Ex. 5-3
Com. Ex. 5-4
Com. Ex. 5-5





Si
29.9024
29.8719
29.8434
29.8149
30.0329
30.0616
30.1895
30.1880
29.8723


B
0.6721
0.6724
0.6718
0.6712
0.6741
0.6747
0.6766
0.6766
0.6724


Al
6.4583
6.4612
6.4550
6.4488
6.4771
6.4833
6.5014
6.5010
6.4613


Li
3.0207
3.0005
2.9976
2.9948
3.0295
3.0324
3.0409
3.0407
3.0005


Na
2.5013
2.5024
2.5000
2.4976
2.5086
2.5110
2.5180
2.5178
2.5024


K
1.3369
1.3375
1.3363
1.3350
1.3408
1.3421
1.3459
1.3458
1.3376


Mg
0.3778
0.3779
0.3776
0.3772
0.3789
0.3792
0.3803
0.3803
0.3779


Ca
1.2459
1.2464
1.2452
1.2440
1.2495
1.2507
1.2542
1.2541
1.2464


Sr
0.5447
0.5450
0.5445
0.5439
0.5463
0.5469
0.5484
0.5484
0.5450


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
1.4179
1.4185
1.4172
1.4158
1.4220
1.4234
1.4273
1.4273
1.4185


Ti
1.1163
1.1168
1.1157
1.1147
1.1195
1.1206
1.1237
1.1237
1.1168


La
2.1500
2.1510
2.1489
2.1468
2.1562
2.1583
2.1643
2.1642
2.1510


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4528
0.4528
0.4522
0.4516
0.0000
0.1898
0.0076
0.0076
0.7545


Ce
0.2346
0.3128
0.3905
0.4680
0.0000
0.0000
0.0039
0.0079
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.4023
0.1216
0.0000
0.0000
0.0000


O
48.5683
48.5329
48.5043
48.4757
48.6623
48.7045
48.8181
48.8166
48.5433


Total
100.0000
100.0000
100.0002
100.0000
100.0000
100.0001
100.0001
100.0000
99.9999


Li + Na + K
6.8589
6.8404
6.8339
6.8274
6.8789
6.8855
6.9048
6.9043
6.8405


Mg + Ca + Sr + Ba
2.1684
2.1693
2.1673
2.1651
2.1747
2.1768
2.1829
2.1828
2.1693


Zr + Ti + La + Nb + Ta + Hf
4.6842
4.6863
4.6818
4.6773
4.6977
4.7023
4.7153
4.7152
4.6863


Ce + Sn
0.5181
0.6908
0.8636
1.0363

0.0000
0.5132

0.0000


Sn + Ce
0.6874
0.7656
0.8427
0.9196
0.0000
0.1898
0.0115
0.0155
0.7545


Si + Al
36.3607
.36.3331
36.2984
36.2637
36.5100
36.5449
36.6909
36.6890
36.3336


Rank on bubbles
B
B
B
B
G
G
G
G
G




























TABLE 6







Component
6-1
6-2
6-3
6-4
6-5
6-6
6-7
6-8
6-9
6-10
6-11
6-12























(mol %)
SiO2
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.100
0.100
0.100
0.100
0.100
0.100
0.200
0.200
0.200
0.200
0.200
0.200


glass
CeO2
0.000
0.001
0.005
0.010
0.050
0.100
0.000
0.001
0.005
0.010
0.050
0.100


components
Sb2O3
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000


(mass %)
CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000
0.0050
0.0250
0.0500
0.2500
0.5000



SnO2 + CeO2
0.100
0.101
0.105
0.110
0.150
0.200
0.200
0.201
0.205
0.210
0.250
0.300


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



K2O















MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO + BaO















ZrO2 + TiO2 +
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4



















Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A





Component
6-13
6-14
6-15
6-16
6-17
6-18
6-19
6-20
6-21
6-22
6-23
6-24























(mol %)
SiO2
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.200
0.250
0.250
0.250
0.250
0.250
0.250
0.250
0.250
0.300
0.300
0.300


glass
CeO2
0.200
0.000
0.001
0.005
0.010
0.050
0.100
0.200
0.250
0.000
0.001
0.005


components
Sb2O3
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000


(mass %)
CeO2/SnO2
1.0000
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000
1.0000
0.0000
0.0033
0.0167



SnO2 + CeO2
0.400
0.250
0.251
0.255
0.260
0.300
0.350
0.450
0.500
0.300
0.301
0.305


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



K2O















MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO + BaO















ZrO2 + TiO2 +
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4



















Rank on bubbles
A
D
B
A
A
A
A
A
A
D
B
A





Component
6-25
6-26
6-27
6-28
6-29
6-30
6-31
6-32
6-33
6-34
6-35
6-36























(mol %)
SiO2
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.300
0.300
0.300
0.300
0.300
0.400
0.400
0.400
0.400
0.400
0.400
0.400


glass
CeO2
0.010
0.050
0.100
0.200
0.300
0.000
0.001
0.005
0.010
0.050
0.100
0.200


components
Sb2O3
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000


(mass %)
CeO2/SnO2
0.0333
0.1667
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250
0.1250
0.2500
0.5000



SnO2 + CeO2
0.310
0.350
0.400
0.500
0.600
0.400
0.401
0.405
0.410
0.450
0.500
0.600


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



K2O















MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO + BaO















ZrO2 + TiO2 +
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4



















Rank on bubbles
A
A
A
A
A
D
B
B
A
A
A
A





Component
6-37
6-38
6-39
6-40
6-41
6-42
6-43
6-44
6-45
6-46
6-47
6-48























(mol %)
SiO2
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.400
0.400
0.500
0.500
0.500
0.500
0.500
0.500
0.500
0.500
0.500
0.500


components
CeO2
0.300
0.400
0.000
0.001
0.005
0.010
0.050
0.100
0.200
0.300
0.400
0.500


(mass%)
Sb2O3
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000



CeO2/SnO2
0.7500
1.0000
0.0000
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000
0.8000
1.0000



SnO2 + CeO2
0.700
0.800
0.500
0.501
0.505
0.510
0.550
0.600
0.700
0.800
0.900
1.000


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



K2O















MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO + BaO















ZrO2 + TiO2 +
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4



















Rank on bubbles
A
A
E
C
C
B
B
A
A
A
A
A





Component
6-49
6-50
6-51
6-52
6-53
6-54
6-55
6-56
6-57
6-58
6-59
Com.Ex.6-1























(mol %)
SiO2
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on
SnO2
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.000


glass
CeO2
0.000
0.001
0.005
0.010
0.050
0.100
0.200
0.300
0.400
0.500
0.600
0.000


components
Sb2O3
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.000
0.500


(mass %)
CeO2/SnO2
0.0000
0.0017
0.0083
0.0167
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000




SnO2 + CeO2
0.600
0.601
0.605
0.610
0.650
0.700
0.800
0.900
1.000
1.100
1.200
0.000


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6
19.6



K2O















MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO + BaO















ZrO2 + TiO2 +
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +















Ta2O5 + HfO2















SiO2 + Al2O3
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4
77.4



















Rank on bubbles
E
C
C
C
C
B
B
B
B
B
B
G














Component
Com.Ex.6-2
Com.Ex.6-3
Com.Ex.6-4
Com.Ex.6-5















(mol %)
SiO2
68.6
68.6
68.6
68.6



B2O3
0.0
0.0
0.0
0.0



Al2O3
8.8
8.8
8.8
8.8



P2O5
0.2
0.2
0.2
0.2



Li2O
15.3
15.3
15.3
15.3



Na2O
3.2
3.2
3.2
3.2



K2O
1.1
1.1
1.1
1.1



MgO
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0



ZrO2
0.0
0.0
0.0
0.0



TiO2
1.6
1.6
1.6
1.6



La2O3
0.6
0.6
0.6
0.6



Nb2O5
0.6
0.6
0.6
0.6



Ta2O5
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0


Based on
SnO2
0.250
1.000
0.000
1.000


glass
CeO2
0.000
0.000
1.000
1.000


components
Sb2O3
0.150
0.000
0.000
0.000


(mass %)
CeO2/SnO2
0.0000
0.0000

1.0000



SnO2 + CeO2
0.250
1.000
1.000
2.000


(mol %)
Li2O + Na2O +
19.6
19.6
19.6
19.6



K2O







MgO + CaO +
0.0
0.0
0.0
0.0



SrO + BaO







ZrO2 + TiO2 +
2.8
2.8
2.8
2.8



La2O3 + Nb2O5 +







Ta2O5 + HfO2







SiO2 + Al2O3
77.4
77.4
77.4
77.4











Rank on bubbles
G
G
G
G






















Component (mass %)
6-1
6-2
6-3
6-4
6-5
6-6
6-7
6-8
6-9
6-10
6-11
6-12





Si
30.6067
30.6063
30.6051
30.6036
30.5914
30.5607
30.5608
30.5605
30.5592
30.5577
30.5455
30.5303


B
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Al
7.5438
7.5437
7.5434
7.5430
7.5400
7.5434
7.5435
7.5434
7.5431
7.5427
7.5397
7.5359


P
0.1968
0.1968
0.1968
0.1968
0.1967
0.1968
0.1968
0.1968
0.1968
0.1968
0.1967
0.1966


Li
3.3741
3.3740
3.3739
3.3737
3.3724
3.3739
3.3739
3.3739
3.3738
3.3736
3.3722
3.3706


Na
2.3374
2.3373
2.3372
2.3371
2.3362
2.3372
2.3373
2.3372
2.3371
2.3370
2.3361
2.3349


K
1.3664
1.3664
1.3664
1.3663
1.3658
1.3664
1.3664
1.3664
1.3663
1.3662
1.3657
1.3650


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ti
1.2170
1.2170
1.2169
1.2169
1.2164
1.2169
1.2169
1.2169
1.2169
1.2168
1.2163
1.2157


La
2.6369
2.6369
2.6368
2.6367
2.6356
2.6368
2.6368
2.6368
2.6367
2.6366
2.6355
2.6342


Nb
1.7711
1.7711
1.7710
1.7709
1.7702
1.7710
1.7710
1.7710
1.7709
1.7708
1.7701
1.7692


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0785
0.0785
0.0785
0.0785
0.0785
0.0785
0.1570
0.1570
0.1570
0.1569
0.1569
0.1568


Ce
0.0000
0.0008
0.0041
0.0081
0.0407
0.0813
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.8713
48.8712
48.8699
48.8684
48.8561
48.8371
48.8396
48.8393
48.8381
48.8368
48.8247
48.8096


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
7.0779
7.0777
7.0775
7.0771
7.0744
7.0775
7.0776
7.0775
7.0772
7.0768
7.0740
7.0705


Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr + Ti + La + Nb + Ta + Hf
5.6250
5.6250
5.6247
5.6245
5.6222
5.6247
5.6247
5.6247
5.6245
5.6242
5.6219
5.6191


Ce/Sn
0.0000
0.0102
0.0522
0.1032
0.5185
1.0357
0.0000
0.0051
0.0261
0.0516
0.2588
0.5179


Sn + Ce
0.0785
0.0793
0.0826
0.0866
0.1192
0.1598
0.1570
0.1578
0.1611
0.1650
0.1975
0.2380


Si + Al
38.1505
38.1500
38.1485
38.1466
38.1314
38.1041
38.1043
38.1039
38.1023
38.1004
38.0852
38.0662


Rank on bubbles
D
C
B
B
B
B
D
B
A
A
A
A





Component (mass %)
6-13
6-14
6-15
6-16
6-17
6-18
6-19
6-20
6-21
6-22
6-23
6-24





Si
30.4999
30.5456
30.5453
30.5440
30.5425
30.5303
30.5151
30.4848
30.4697
30.5304
30.5301
30.5289


B
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Al
7.5284
7.5397
7.5396
7.5393
7.5390
7.5360
7.5322
7.5247
7.5210
7.5360
7.5359
7.5356


P
0.1964
0.1967
0.1967
0.1967
0.1967
0.1966
0.1965
0.1963
0.1962
0.1966
0.1966
0.1966


Li
3.3672
3.3722
3.3722
3.3721
3.3719
3.3706
3.3689
3.3655
3.3639
3.3706
3.3705
3.3704


Na
2.3326
2.3361
2.3361
2.3360
2.3359
2.3349
2.3338
2.3314
2.3303
2.3349
2.3349
2.3348


K
1.3637
1.3657
1.3657
1.3656
1.3656
1.3650
1.3643
1.3630
1.3623
1.3650
1.3650
1.3650


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ti
1.2145
1.2163
1.2163
1.2163
1.2162
1.2157
1.2151
1.2139
1.2133
1.2157
1.2157
1.2157


La
2.6316
2.6355
2.6355
2.6354
2.6352
2.6342
2.6329
2.6303
2.6290
2.6342
2.6342
2.6341


Nb
1.7675
1.7701
1.7701
1.7700
1.7699
1.7692
1.7684
1.7666
1.7657
1.7692
1.7692
1.7692


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1565
0.1961
0.1961
0.1961
0.1960
0.1959
0.1958
0.1955
0.1954
0.2351
0.2351
0.2351


Ce
0.1622
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.1621
0.2025
0.0000
0.0008
0.0041


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.7795
48.8260
48.8256
48.8244
48.8230
48.8110
48.7958
48.7659
48.7507
48.8123
48.8120
48.8105


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
7.0635
7.0740
7.0740
7.0737
7.0734
7.0705
7.0670
7.0599
7.0565
7.0705
7.0704
7.0702


Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr + Ti + La + Nb + Ta + Hf
5.6136
5.6219
5.6219
5.6217
5.6213
5.6191
5.6164
5.6108
5.6080
5.6191
5.6191
5.6190


Ce/Sn
1.0364
0.0000
0.0041
0.0209
0.0413
0.2072
0.4147
0.8292
1.0363
0.0000
0.0034
0.0174


Sn + Ce
0.3187
0.1961
0.1969
0.2002
0.2041
0.2365
0.2770
0.3576
0.3979
0.2351
0.2359
0.2392


Si + Al
38.0283
38.0853
38.0849
38.0833
38.0815
38.0663
38.0473
38.0095
37.9907
38.0664
38.0660
38.0645


Rank on bubbles
A
D
B
A
A
A
A
A
A
D
B
A





Component (mass %)
6-25
6-26
6-27
6-28
6-29
6-30
6-31
6-32
6-33
6--34
6-35
6-36





Si
30.5273
30.5152
30.5000
30.4697
30.4240
30.5001
30.4998
30.4986
30.4971
30.4849
30.4698
30.4241


B
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Al
7.5352
7.5322
7.5285
7.5210
7.5207
7.5285
7.5284
7.5281
7.5277
7.5247
7.5210
7.5207


Li
0.1966
0.1965
0.1964
0.1962
0.1962
0.1964
0.1964
0.1964
0.1964
0.1963
0.1962
0.1962


Na
3.3702
3.3689
3.3672
3.3639
3.3637
3.3672
3.3672
3.3671
3.3669
3.3655
3.3639
3.3637


K
2.3347
2.3338
2.3326
2.3303
2.3302
2.3326
2.3326
2.3325
2.3324
2.3315
2.3303
2.3302


Mg
1.3649
1.3643
1.3637
1.3623
1.3623
1.3637
1.3637
1.3636
1.3635
1.3630
1.3623
1.3623


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
1.2156
1.2151
1.2145
1.2133
1.2133
1.2145
1.2145
1.2145
1.2144
1.2139
1.2133
1.2133


Nb
2.6339
2.6329
2.6316
2.6290
2.6289
2.6316
2.6316
2.6314
2.6313
2.6303
2.6290
2.6289


Ta
1.7691
1.7684
1.7675
1.7657
1.7656
1.7675
1.7675
1.7674
1.7673
1.7666
1.7657
1.7657


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ce
0.2351
0.2350
0.2348
0.2345
0.2344
0.3130
0.3130
0.3130
0.3130
0.3128
0.3126
0.3125


Sb
0.0081
0.0406
0.0811
0.1620
0.2429
0.0000
0.0008
0.0041
0.0081
0.0405
0.0810
0.1619


O
0.0000
0.0000
0.0000
0.00100
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Total
48.8093
48.7971
48.7821
48.7521
48.7178
48.7849
48.7845
48.7833
48.7819
48.7700
48.7549
48.7205


Li + Na + K
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Mg + Ca + Sr + Ba
7.0698
7.0670
7.0635
7.0565
7.0562
7.0635
7.0635
7.0632
7.0628
7.0600
7.0565
7.0562


Zr + Ti + La + Nb + Ta + Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ce/Sn
5.6186
5.6164
5.6136
5.6080
5.6078
5.6136
5.6136
5.6133
5.6130
5.6108
5.6080
5.6079


Sn + Ce
0.0345
0.1728
0.3454
0.6908
1.0363
0.0000
0.0026
0.0131
0.0259
0.1295
0.2591
0.5181


Si + Al
0.2432
0.2756
0.3159
0.3965
0.4773
0.3130
0.3138
0.3171
0.3211
0.3533
0.3936
0.4744


s i + Al
38.0625
38.0474
38.0285
37.9907
37.9447
38.0286
38.0282
38.0267
38.0248
38.0096
37.9908
37.9448


Rank on bubbles
A
A
A
A
A
D
B
B
A
A
A
A





Component (mass %)
6-37
6-38
6-39
6-40
6-41
6-42
6-43
6-44
6-45
6-46
6-47
6-48





Si
30.3939
30.3639
30.4699
30.4696
30.4684
30.4669
30.4393
30.4242
30.3940
30.3639
30.3483
30.3028


B
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Al
7.5132
7.5058
7.5210
7.5210
7.5207
7.5203
7.5245
7.5207
7.5133
7.5058
7.5020
7.5017


P
0.1960
0.1958
0.1962
0.1962
0.1962
0.1962
0.1963
0.1962
0.1960
0.1958
0.1957
0.1957


Li
3.3604
3.3570
3.3639
3.3639
3.3637
3.3636
3.3654
3.3637
3.3604
3.3571
3.3334
3.3333


Na
2.3279
2.3256
2.3303
2.3303
2.3302
2.3301
2.3314
2.3302
2.3279
2.3256
2.3244
2.3243


K
1.3609
1.3596
1.3623
1.3623
1.3623
1.3622
1.3629
1.3623
1.3609
1.3596
1.3589
1.3588


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ti
1.2121
1.2109
1.2133
1.2133
1.2133
1.2132
1.2139
1.2133
1.2121
1.2109
1.2102
1.2102


La
2.6263
2.6237
2.6290
2.6289
2.6288
2.6287
2.6302
2.6289
2.6263
2.6237
2.6223
2.6222


Nb
1.7639
1.7622
1.7657
1.7657
1.7656
1.7656
1.7665
1.7657
1.7639
1.7622
1.7613
1.7612


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3121
0.3116
0.3908
0.3908
0.3907
0.3907
0.3909
0.3906
0.3901
0.3895
0.3892
0.3890


Ce
0.2425
0.3229
0.0000
0.0008
0.0040
0.0080
0.0405
0.0809
0.1617
0.2422
0.3226
0.4031


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.6908
48.6610
48.7576
48.7572
48.7561
48.7545
48.7382
48.7233
48.6934
48.6637
48.6317
48.5977


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
7.0492
7.0422
7.0565
7.0565
7.0562
7.0559
7.0597
7.0562
7.0492
7.0423
7.0167
7.0164


Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr + Ti + La + Nb + Ta + Hf
5.6023
5.5968
5.6080
5.6079
5.6077
5.6075
5.6106
5.6079
5.6023
5.5968
5.5938
5.5936


Ce/Sn
0.7770
1.0363
0.0000
0.0020
0.0102
0.0205
0.1036
0.2071
0.4145
0.6218
0.8289
1.0362


Sn + Ce
0.5546
0.6345
0.3908
0.3916
0.3947
0.3987
0.4314
0.4715
0.5518
0.6317
0.7118
0.7921


Si + Al
37.9071
37.8697
37.9909
37.9906
37.9891
37.9872
37.9638
37.9449
37.9073
37.8697
37.8503
37.8045


Rank on bubbles
A
A
E
C
C
B
B
A
A
A
A
A





Component (mass %)
6-49
6-50
6-51
6-52
6-53
6-54
6-55
6-56
6-57
6-58
6-59
Com.Ex.6-1





Si
30.4242
30.4239
30.4227
30.4212
30.4092
30.3941
30.3640
30.3484
30.3029
30.2730
30.2432
30.4691


B
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Al
7.5207
7.5207
7.5204
7.5200
7.5170
7.5133
7.5059
7.5020
7.5017
7.4943
7.4869
7.5208


P
0.1962
0.1962
0.1962
0.1962
0.1961
0.1960
0.1958
0.1957
0.1957
0.1955
0.1953
0.1962


Li
3.3638
3.3637
3.3636
3.3634
3.3621
3.3604
3.3571
3.3334
3.3333
3.3300
3.3268
3.3638


Na
2.3302
2.3302
2.3301
2.3300
2.3291
2.3279
2.3256
2.3244
2.3243
2.3220
2.3197
2.3302


K
1.3623
1.3623
1.3622
1.3621
1.3616
1.3609
1.3596
1.3589
1.3588
1.3575
1.3561
1.3623


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ti
1.2133
1.2133
1.2132
1.2131
1.2127
1.2121
1.2109
1.2102
1.2102
1.2090
1.2078
1.2133


La
2.6289
2.6288
2.6287
2.6286
2.6276
2.6263
2.6237
2.6223
2.6222
2.6196
2.6171
2.6289


Nb
1.7657
1.7656
1.7656
1.7655
1.7648
1.7639
1.7622
1.7613
1.7612
1.7595
1.7577
1.7657


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4687
0.4687
0.4687
0.4686
0.4684
0.4681
0.4674
0.4670
0.4668
0.4662
0.4656
0.0000


Ce
0.0000
0.0008
0.0040
0.0081
0.0404
0.0808
0.1615
0.2420
0.3225
0.4026
0.4824
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.4165


O
48.7260
48.7258
48.7246
48.7232
48.7110
48.6962
48.6663
48.6344
48.6004
48.5708
48.5414
48.7332


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
7.0563
7.0562
7.0559
7.0555
7.0528
7.0492
7.0423
7.0167
7.0164
7.0095
7.0026
7.0563


Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr + Ti + La + Nb + Ta + Hf
5.6079
5.6077
5.6075
5.6072
5.6051
5.6023
5.5968
5.5938
5.5936
5.5881
5.5826
5.0079


Ce/Sn
0.0000
0.0017
0.0085
0.0173
0.0863
0.1726
0.3455
0.5182
0.6909
0.8636
1.0361



Sn + Ce
0.4687
0.4695
0.4727
0.4767
0.5088
0.5489
0.6289
0.7090
0.7893
0.8688
0.9480
0.0000


Si + Al
37.9449
37.9446
37.9431
37.9412
37.9262
37.9074
37.8699
37.8504
37.8046
37.7673
37.7301
37.9899


Rank on bubbles
E
C
C
C
C
B
B
B
B
B
B
G














Component (mass %)
Com.Ex.6-2
Com.Ex.6-3
Com.Ex.6-4
Com.Ex.6-5





Si
30.5004
30.6326
30.6311
30.3032


B
0.0000
0.0000
0.0000
0.0000


Al
7.5286
7.5502
7.5498
7.5018


P
0.1964
0.1970
0.1970
0.1957


Li
3.3673
3.3769
3.3768
3.3334


Na
2.3326
2.3393
2.3392
2.3243


K
1.3637
1.3676
1.3675
1.3588


Mg
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000


Zr
0.0000
0.0000
0.0000
0.0000


Ti
1.2145
1.2180
1.2180
1.2102


La
2.6316
2.6392
2.6390
2.6223


Nb
1.7675
1.7726
1.7725
1.7612


Ta
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000


Sn
0.1957
0.0079
0.0079
0.7779


Ce
0.0000
0.0041
0.0081
0.0000


Sb
0.1235
0.0000
0.0000
0.0000


O
48.7782
48.8946
48.8931
48.6112


Total
100.0000
100.0000
100.0000
100.0000


Li + Na + K
7.0636
7.0838
7.0835
7.0165


Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000


Zr + Ti + La + Nb + Ta + Hf
5.6136
5.6298
5.6295
5.5937


Ce/Sn
0.0000
0.5190

0.0000


Sn + Ce
0.1957
0.0120
0.0160
0.7779


Si + Al
38.0290
38.1828
38.1809
37.8050


Rank on bubbles
G
G
G
G























TABLE 7







Component
7-1
7-2
7-3
7-4
7-5
7-6
7-7


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5
65.5



Al2O3
8.6
8.6
8.6
8.6
8.6
8.6
8.6



Li2O
12.5
12.5
12.5
12.5
12.5
12.5
12.5



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass components
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2


(mass %)
CeO2
0
0.001
0.005
0.01
0.05
0.1
0



Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000



SnO2 +
0.1
0.101
0.105
0.11
0.15
0.2
0.2



CeO2









(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9
22.9



Na2O +










K2O










MgO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO +










SrO +










BaO










ZrO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2 +










La2O3 +










Nb2O5 +










Ta2O5 +










HfO2










SiO2 +
74.1
74.1
74.1
74.1
74.1
74.1
74.1



Al2O3





















Rank on bubbles
D
C
B
B
B
B
D


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)


















Component
7-8
7-9
7-10
7-11
7-12
7-13



















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5




Al2O3
8.6
8.6
8.6
8.6
8.6
8.6




Li2O
12.5
12.5
12.5
12.5
12.5
12.5




Na2O
10.4
10.4
10.4
10.4
10.4
10.4




K2O
0.0
0.0
0.0
0.0
0.0
0.0




MgO
0.0
0.0
0.0
0.0
0.0
0.0




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZrO2
3.0
3.0
3.0
3.0
3.0
3.0




TiO2
0.0
0.0
0.0
0.0
0.0
0.0




La2O3
0.0
0.0
0.0
0.0
0.0
0.0




Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.2
0.2
0.2
0.2
0.2
0.2



components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000




SnO2 + CeO2
0.201
0.205
0.21
0.25
0.3
0.4



(mol %)
Li2O + Na2O +
22.9
22.9
22.9
22.9
22.9
22.9




K2O










MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0




SrO + BaO










ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
74.1
74.1
74.1
74.1
74.1
74.1















Rank on bubbles
B
A
A
A
A
A



Acid etching rate (nm/min)
3.9
3.9
3.9
3.9
3.9
3.9



Alkaline etching rate (nm/min)
0.01
0.01
0.01
0.01
0.01
0.01

















Component
7-14
7-15
7-16
7-17
7-18
7-19
7-20


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5
65.5



Al2O3
8.6
8.6
8.6
8.6
8.6
8.6
8.6



Li2O
12.5
12.5
12.5
12.5
12.5
12.5
12.5



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25


on glass
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2


components
Sb2O3
0
0
0
0
0
0
0


(mass %)
CeO2/
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000



SnO2










SnO2 +
0.25
0.251
0.255
0.26
0.3
0.35
0.45



CeO2









(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9
22.9



Na2O +










K2O










MgO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO +










SrO +










BaO










ZrO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2 +










La2O3 +










Nb2O5 +










Ta2O5 +










HfO2










SiO2 +
74.1
74.1
74.1
74.1
74.1
74.1
74.1



Al2O3





















Rank on bubbles
D
B
A
A
A
A
A


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)


















Component
7-21
7-22
7-23
7-24
7-25
7-26



















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5




Al2O3
8.6
8.6
8.6
8.6
8.6
8.6




Li2O
12.5
12.5
12.5
12.5
12.5
12.5




Na2O
10.4
10.4
10.4
10.4
10.4
10.4




K2O
0.0
0.0
0.0
0.0
0.0
0.0




MgO
0.0
0.0
0.0
0.0
0.0
0.0




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZrO2
3.0
3.0
3.0
3.0
3.0
3.0




TiO2
0.0
0.0
0.0
0.0
0.0
0.0




La2O3
0.0
0.0
0.0
0.0
0.0
0.0




Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.25
0.3
0.3
0.3
0.3
0.3



components
CeO2
0.25
0
0.001
0.005
0.01
0.05



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667




SnO2 + CeO2
0.5
0.3
0.301
0.305
0.31
0.35



(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9




Na2O + K2O










MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0




SrO + BaO










ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
74.1
74.1
74.1
74.1
74.1
74.1















Rank on bubbles
A
D
B
A
A
A



Acid etching rate (nm/min)
3.9
3.9
3.9
3.9
3.9
3.9



Alkaline etching rate (nm/min)
0.01
0.01
0.01
0.01
0.01
0.01

















Component
7-27
7-28
7-29
7-30
7-31
7-32
7-33


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5
65.5



Al2O3
8.6
8.6
8.6
8.6
8.6
8.6
8.6



Li2O
12.5
12.5
12.5
12.5
12.5
12.5
12.5



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4


on glass
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01


components
Sb2O3
0
0
0
0
0
0
0


(mass %)
CeO2/
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250



SnO2










SnO2 +
0.4
0.5
0.6
0.4
0.401
0.405
0.41



CeO2









(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9
22.9



Na2O +










K2O










MgO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO +










SrO +










BaO










ZrO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2 +










La2O3 +










Nb2O5 +










Ta2O5 +










HfO2










SiO2 +
74.1
74.1
74.1
74.1
74.1
74.1
74.1



Al2O3





















Rank on bubbles
A
A
A
D
B
B
A


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)


















Component
7-34
7-35
7-36
7-37
7-38
7-39



















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5




Al2O3
8.6
8.6
8.6
8.6
8.6
8.6




Li2O
12.5
12.5
12.5
12.5
12.5
12.5




Na2O
10.4
10.4
10.4
10.4
10.4
10.4




K2O
0.0
0.0
0.0
0.0
0.0
0.0




MgO
0.0
0.0
0.0
0.0
0.0
0.0




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZrO2
3.0
3.0
3.0
3.0
3.0
3.0




TiO2
0.0
0.0
0.0
0.0
0.0
0.0




La2O3
0.0
0.0
0.0
0.0
0.0
0.0




Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.4
0.4
0.4
0.4
0.4
0.5



components
CeO2
0.05
0.1
0.2
0.3
0.4
0



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000




SnO2 + CeO2
0.45
0.5
0.6
0.7
0.8
0.5



(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9




Na2O + K2O










MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0




SrO + BaO










ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
74.1
74.1
74.1
74.1
74.1
74.1















Rank on bubbles
A
A
A
A
A
E



Acid etching rate (nm/min)
3.9
3.9
3.9
3.9
3.9
3.9



Alkaline etching rate (nm/min)
0.01
0.01
0.01
0.01
0.01
0.01

















Component
7-40
7 -41
7-42
7-43
7-44
7-45
7-46


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5
65.5



Al2O3
8.6
8.6
8.6
8.6
8.6
8.6
8.6



Li2O
12.5
12.5
12.5
12.5
12.5
12.5
12.5



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100 0
100.0
100.0
100.0
100.0


Based
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5


on glass
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3


components
Sb2O3
0
0
0
0
0
0
0


(mass %)
CeO2/
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000



SnO2










SnO2 +
0.501
0.505
0.51
0.55
0.6
0.7
0.8



CeO2









(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9
22.9



Na2O +










K2O










MgO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO +










SrO +










BaO










ZrO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2 +










La2O3 +










Nb2O5 +










Ta2O5 +










HfO2










SiO2 +
74.1
74.1
74.1
74.1
74.1
74.1
74.1



Al2O3





















Rank on bubbles
C
C
B
B
A
A
A


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)


















Component
7-47
7-48
7-49
7-50
7-51
7-52



















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5




Al2O3
8.6
8.6
8.6
8.6
8.6
8.6




Li2O
12.5
12.5
12.5
12.5
12.5
12.5




Na2O
10.4
10.4
10.4
10.4
10.4
10.4




K2O
0.0
0.0
0.0
0.0
0.0
0.0




MgO
0.0
0.0
0.0
0.0
0.0
0.0




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZrO2
3.0
3.0
3.0
3.0
3.0
3.0




TiO2
0.0
0.0
0.0
0.0
0.0
0.0




La2O3
0.0
0.0
0.0
0.0
0.0
0.0




Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.5
0.5
0.6
0.6
0.6
0.6



components
CeO2
0.4
0.5
0
0.001
0.005
0.01



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167




SnO2 + CeO2
0.9
1
0.6
0.601
0.605
0.61



(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9




Na2O + K2O










MgO + CaO +
0.0
0.0
0.0
0.0
0.0
0.0




SrO + BaO










ZrO2 + TiO2 +
3.0
3.0
3.0
3.0
3.0
3.0




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
74.1
74.1
74.1
74.1
74.1
74.1















Rank on bubbles
A
A
E
C
C
C



Acid etching
3.9
3.9
3.9
3.9
3.9
3.9



rate (nm/min)









Alkaline
0.01
0.01
0.01
0.01
0.01
0.01



etching rate (nm/min)























Component
7-53
7-54
7-55
7-56
7-57
7-58
7-59


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5
65.5
65.5



Al2O3
8.6
8.6
8.6
8.6
8.6
8.6
8.6



Li2O
12.5
12.5
12.5
12.5
12.5
12.5
12.5



Na2O
10.4
10.4
10.4
10.4
10.4
10.4
10.4



K2O
0.0
0.0
0.0
0.0
0.0
0.0
0.0



MgO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZrO2
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



La2O3
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Nb2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6


components
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000



SnO2










SnO2 +
0.65
0.7
0.8
0.9
1
1.1
1.2



CeO2









(mol %)
Li2O +
22.9
22.9
22.9
22.9
22.9
22.9
22.9



Na2O +










K2O










MgO +
0.0
0.0
0.0
0.0
0.0
0.0
0.0



CaO +










SrO +










BaO










ZrO2 +
3.0
3.0
3.0
3.0
3.0
3.0
3.0



TiO2 +










La2O3 +










Nb2O5 +










Ta2O5 +










HfO2










SiO2 +
74.1
74.1
74.1
74.1
74.1
74.1
74.1



Al2O3





















Rank on bubbles
C
B
B
B
B
B
B


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)

















Component
Com. Ex. 7-1
Com. Ex. 7-2
Com. Ex. 7-3
Com. Ex. 7-4
Com. Ex. 7-5


















(mol %)
SiO2
65.5
65.5
65.5
65.5
65.5




Al2O3
8.6
8.6
8.6
8.6
8.6




Li2O
12.5
12.5
12.5
12.5
12.5




Na2O
10.4
10.4
10.4
10.4
10.4




K2O
0.0
0.0
0.0
0.0
0.0




MgO
0.0
0.0
0.0
0.0
0.0




CaO
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0




ZrO2
3.0
3.0
3.0
3.0
3.0




TiO2
0.0
0.0
0.0
0.0
0.0




La2O3
0.0
0.0
0.0
0.0
0.0




Nb2O5
0.0
0.0
0.0
0.0
0.0




Ta2O5
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0
0.25
1
0
1



components
CeO2
0
0
0
1
1



(mass %)
Sb2O3
0.5
0.15
0
0
0




CeO2/SnO2

0.0000
0.0000

1.0000




SnO2 + CeO2
0
0.25
1
1
2



(mol %)
Li2O + Na2O + K2O
22.9
22.9
22.9
22.9
22.9




MgO + CaO + SrO + BaO
0.0
0.0
0.0
0.0
0.0




ZrO2 + TiO2 + La2O3 +
3.0
3.0
3.0
3.0
3.0




Nb2O5 + Ta2O5 + HfO2









SiO2 + Al2O3
74.1
74.1
74.1
74.1
74.1














Rank on bubbles
G
G
G
G
G



Acid etching rate (nm/min)
3.9
3.9
3.9
3.9
3.9



Alkaline etching rate (nm/min)
0.01
0.01
0.01
0.01
0.01

















Component









(mass %)
7-1
7-2
7-3
7-4
7-5
7-6
7-7





Si
30.5534
30.5531
30.5519
30.5504
30.5382
30.5230
30.5231


Al
4.5232
4.5231
4.5229
4.5227
4.5209
4.5187
4.5187


Li
5.8179
5.8179
5.8176
5.8173
5.8150
5.8120
5.8120


Na
7.7080
7.7079
7.7076
7.7072
7.7041
7.7003
7.7003


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
2.2776
2.2776
2.2775
2.2774
2.2765
2.2754
2.2754


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0785
0.0785
0.0785
0.0785
0.0784
0.0784
0.1568


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
49.0414
49.0411
49.0399
49.0384
49.0263
49.0110
49.0137


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
13.5259
13.5258
13.5252
13.5245
13.5191
13.5123
13.5123


Mg + Ca +
0.0000
0.00000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr + Ba









Zr + Ti + La +
2.2776
2.2776
2.2775
2.2774
2.2765
2.2754
2.2754


Nb + Ta + Hf









Ce/Sn
0.0000
0.0102
0.0522
0.1032
0.5179
1.0357
0.0000


Sn + Ce
0.0785
0.0793
0.0826
0.0866
0.1190
0.1596
0.1568


Si + Al
35.0766
35.0762
35.0748
35.0731
35.0591
35.0417
35.0418


Rank on bubbles
D
C
B
B
B
B
D


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)






Component









(mass %)
7-8
7-9
7-10
7-11
7-12
7-13






Si
30.5228
30.5215
30.5200
30.5078
30.4927
30.4449



Al
4.5186
4.5184
4.5182
4.5164
4.5142
4.5145



Li
5.8120
5.8118
5.8116
5.8092
5.8064
5.8068



Na
7.7002
7.6999
7.6995
7.6965
7.6926
7.6932



K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Zr
2.2754
2.2753
2.2751
2.2742
2.2731
2.2733



Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Sn
0.1568
0.1567
0.1567
0.1567
0.1565
0.1565



Ce
0.0008
0.0041
0.0081
0.0406
0.0811
0.1622



Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



O
49.0134
49.0123
49.0108
48.9986
48.9834
48.9486



Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000



Li + Na + K
13.5122
13.5117
13.5111
13.5057
13.4990
13.5000



Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Zr + Ti + La +
2.2754
2.2753
2.2751
2.2742
2.2731
2.2733



Nb + Ta + Hf









Ce/Sn
0.0051
0.0262
0.0517
0.2591
0.5182
1.0364



Sn + Ce
0.1576
0.1608
0.1648
0.1973
0.2376
0.3187



Si + Al
35.0414
35.0399
35.0382
35.0242
35.0069
34.9594



Rank on bubbles
B
A
A
A
A
A



Acid etching
3.9
3.9
3.9
3.9
3.9
3.9



rate (nm/min)









Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01



rate (nm/min)


















Component










(mass %)
7-14
7-15
7-16
7-17
7-18
7-19
7-20
7-21





Si
30.5079
30.5076
30.5064
30.5049
30.4927
30.4775
30.4299
30.4309


Al
4.5164
4.5164
4.5162
4.5160
4.5142
4.5119
4.5123
4.5124


Li
5.8093
5.8092
5.8090
5.8087
5.8064
5.8035
5.8039
5.7794


Na
7.6965
7.6964
7.6961
7.6957
7.6927
7.6888
7.6894
7.6897


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
2.2742
2.2742
2.2741
2.2740
2.2731
2.2720
2.2722
2.2722


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1958
0.1958
0.1958
0.1958
0.1957
0.1956
0.1955
0.1955


Ce
0.0000
0.0008
0.0040
0.0080
0.0406
0.0811
0.1620
0.2026


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.9999
48.9996
48.9984
48.9969
48.9846
48.9696
48.9348
48.9173


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
13.5058
13.5056
13.5051
13.5044
13.4991
13.4923
13.4933
13.4691


Mg + Ca +
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr + Ba










Zr + Ti + La +
2.2742
2.2742
2.2741
2.2740
2.2731
2.2720
2.2722
2.2722


Nb + Ta + Hf










Ce/Sn
0.0000
0.0041
0.0204
0.0409
0.2075
0.4146
0.8286
1.0363


Sn + Ce
0.1958
0.1966
0.1998
0.2038
0.2363
0.2767
0.3575
0.3981


Si + Al
35.0243
35.0240
35.0226
35.0209
35.0069
34.9894
34.9422
34.9433


Rank on bubbles
D
B
A
A
A
A
A
A


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)







Component










(mass %)
7-22
7-23
7-24
7-25
7-26
7-27







Si
30.4927
30.4924
30.4912
30.4897
30.4776
30.4450




Al
4.5142
4.5141
4.5140
4.5137
4.5119
4.5145




Li
5.8064
5.8063
5.8061
5.8058
5.8035
5.8068




Na
7.6927
7.6926
7.6923
7.6919
7.6888
7.6932




K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr
2.2731
2.2731
2.2730
2.2729
2.2720
2.2733




Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sn
0.2348
0.2348
0.2348
0.2348
0.2347
0.2348




Ce
0.0000
0.0008
0.0040
0.0081
0.0405
0.0811




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
48.9861
48.9859
48.9846
48.9831
48.9710
48.9513




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
13.4991
13.4989
13.4984
13.4977
13.4923
13.5000




Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr + Ti + La +
2.2731
2.2731
2.2730
2.2729
2.2720
2.2733




Nb + Ta + Hf










Ce/Sn
0.0000
0.0034
0.0170
0.0345
0.1726
0.3454




Sn + Ce
0.2348
0.2356
0.2388
0.2429
0.2752
0.3159




Si + Al
35.0069
35.0065
35.0052
35.0034
34.9895
34.9595




Rank on bubbles
D
B
A
A
A
A




Acid etching
3.9
3.9
3.9
3.9
3.9
3.9




rate (nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01




rate (nm/min)





Component










(mass %)
7-28
7-29
7-30
7-31
7-32
7-33
7-34
7-35





Si
30.4310
30.4008
30.4451
30.4448
30.4436
30.4421
30.4300
30.4310


Al
4.5124
4.5080
4.5145
4.5145
4.5143
4.5141
4.5123
4.5124


Li
5.7794
5.7737
5.8068
5.8068
5.8065
5.8062
5.8039
5.7794


Na
7.6897
7.6821
7.6933
7.6932
7.6929
7.6925
7.6894
7.6897


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
2.2722
2.2700
2.2733
2.2733
2.2732
2.2731
2.2722
2.2722


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2346
0.2343
0.3130
0.3130
0.3130
0.3129
0.3128
0.3127


Ce
0.1620
0.2427
0.0000
0.0008
0.0041
0.0081
0.0405
0.0810


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.9187
48.8884
48.9540
48.9536
48.9524
48.9510
48.9389
48.9216


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
13.4691
13.4558
13.5001
13.5000
13.4994
13.4987
13.4933
13.4691


Mg + Ca +
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr + Ba










Zr + Ti + La +
2.2722
2.2700
2.2733
2.2733
2.2732
2.2731
2.2722
2.2722


Nb + Ta + Hf










Ce/Sn
0.6905
1.0359
0.0000
0.0026
0.0131
0.0259
0.1295
0.2590


Sn + Ce
0.3966
0.4770
0.3130
0.3138
0.3171
0.3210
0.3533
0.3937


Si + Al
34.9434
34.9088
34.9596
34.9593
34.9579
34.9562
34.9423
34.9434


Rank on bubbles
A
A
D
B
B
A
A
A


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)







Component (mass %)
7-36
7-37
7-38
7-39
7-40
7-41







Si
30.4008
30.3707
30.3407
30.4311
30.4308
30.4296




Al
4.5080
4.5035
4.4990
4.5125
4.5124
4.5122




Li
5.7737
5.7680
5.7623
5.7794
5.7794
5.7792




Na
7.6821
7.6745
7.6669
7.6897
7.6897
7.6893




K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr
2.2700
2.2677
2.2655
2.2722
2.2722
2.2721




Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sn
0.3123
0.3119
0.3115
0.3909
0.3909
0.3909




Ce
0.1618
0.2424
0.3228
0.0000
0.0008
0.0041




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
48.8913
48.8613
48.8313
48.9242
48.9238
48.9226




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
13.4558
13.4425
13.4292
13.4691
13.4691
13.4685




Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr + Ti + La + Nb +
2.2700
2.2677
2.2655
2.2722
2.2722
2.2721




Ta + Hf










Ce/Sn
0.5181
0.7772
1.0363
0.0000
0.0020
0.0105




Sn + Ce
0.4741
0.5543
0.6343
0.3909
0.3917
0.3950




Si + Al
34.9088
34.8742
34.8397
34.9436
34.9432
34.9418




Rank on bubbles
A
A
A
E
C
C




Acid etching rate
3.9
3.9
3.9
3.9
3.9
3.9




(nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01




rate (nm/min)











Component










(mass %)
7-42
7-43
7-44
7-45
7-46
7-47
7-48
7-49





Si
30.4281
30.4160
30.4009
30.3708
30.3408
30.2933
30.2634
30.4010


Al
4.5120
4.5102
4.5080
4.5035
4.4991
4.4994
4.4950
4.5080


Li
5.7789
5.7766
5.7737
5.7680
5.7623
5.7627
5.7571
5.7737


Na
7.6890
7.6859
7.6821
7.6745
7.6669
7.6675
7.6599
7.6821


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
2.2720
2.2711
2.2700
2.2677
2.2655
2.2657
2.2634
2.2700


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3909
0.3907
0.3904
0.3899
0.3894
0.3893
0.3888
0.4685


Ce
0.0081
0.0405
0.0809
0.1616
0.2420
0.3227
0.4028
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
48.9210
48.9090
48.8940
48.8640
48.8340
48.7994
48.7696
48.8967


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
13.4679
13.4625
13.4558
13.4425
13.4292
13.4302
13.4170
13.4558


Mg + Ca +
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr + Ba










Zr + Ti + La +
2.2720
2.2711
2.2700
2.2677
2.2655
2.2657
2.2634
2.2700


Nb + Ta + Hf










Ce/Sn
0.0207
0.1037
0.2072
0.4145
0.6215
0.8289
1.0360
0.0000


Sn + Ce
0.3990
0.4312
0.4713
0.5515
0.6314
0.7120
0.7916
0.4685


Si + Al
34.9401
34.9262
34.9089
34.8743
34.8399
34.7927
34.7584
34.9090


Rank on bubbles
B
B
A
A
A
A
A
E


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)







Component (mass %)
7-50
7-51
7-52
7-53
7-54
7-55







Si
30.4007
30.3995
30.3980
30.3859
30.3709
30.3409




Al
4.5079
4.5078
4.5075
4.5058
4.5035
4.4991




Li
5.7737
5.7734
5.7732
5.7709
5.7680
5.7623




Na
7.6820
7.6817
7.6814
7.6783
7.6745
7.6669




K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr
2.2700
2.2699
2.2698
2.2689
2.2678
2.2655




Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sn
0.4685
0.4684
0.4684
0.4682
0.4678
0.4672




Ce
0.0008
0.0040
0.0081
0.0404
0.0808
0.1614




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
48.8964
48.8953
48.8936
48.8816
48.8667
48.8367




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
13.4557
13.4551
13.4546
13.4492
13.4425
13.4292




Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zr + Ti + La + Nb +
2.2700
2.2699
2.2698
2.2689
2.2678
2.2655




Ta + Hf










Ce/Sn
0.0017
0.0085
0.0173
0.0863
0.1727
0.3455




Sn + Ce
0.4693
0.4724
0.4765
0.5086
0.5486
0.6286




Si + Al
34.9086
34.9073
34.9055
34.8917
34.8744
34.8400




Rank on bubbles
C
C
C
C
B
B




Acid etching
3.9
3.9
3.9
3.9
3.9
3.9




rate (nm/min)










Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01




rate (nm/min)
















Component








(mass %)
7-56
7-57
7-58
7-59
Com. Ex. 7-1
Com. Ex. 7-2





Si
30.2934
30.2635
30.2337
30.2040
30.4319
30.4621


Al
4.4994
4.4950
4.4906
4.4861
4.5052
4.5096


Li
5.7628
5.7571
5.7514
5.7457
5.7948
5.8005


Na
7.6675
7.6599
7.6524
7.6449
7.6773
7.6849


K
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Mg
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zr
2.2657
2.2634
2.2612
2.2590
2.2686
2.2708


Ti
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


La
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Nb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4671
0.4665
0.4659
0.4653
0.0000
0.1955


Ce
0.2420
0.3223
0.4023
0.4821
0.0000
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.4152
0.1256


O
48.8021
48.7723
48.7425
48.7129
48.9070
48.9510


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
13.4303
13.4170
13.4038
13.3906
13.4721
13.4854


Mg + Ca +
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr + Ba








Zr + Ti + La +
2.2657
2.2634
2.2612
2.2590
2.2686
2.2708


Nb + Ta + Hf








Ce/Sn
0.5181
0.6909
0.8635
1.0361

0.0000


Sn + Ce
0.7091
0.7888
0.8682
0.9474
0.0000
0.1955


Si + Al
34.7928
34.7585
34.7243
34.6901
34.9371
34.9717


Rank on bubbles
B
B
B
B
G
G


Acid etching
3.9
3.9
3.9
3.9
3.9
3.9


rate (nm/min)








Alkaline etching
0.01
0.01
0.01
0.01
0.01
0.01


rate (nm/min)














Component (mass %)
Com. Ex. 7-3
Com. Ex. 7-4
Com. Ex. 7-5








Si
30.2829
30.2820
29.9692





Al
4.4831
4.4830
4.4513





Li
5.7664
5.7662
5.7011





Na
7.6397
7.6395
7.5855





K
0.0000
0.0000
0.0000





Mg
0.0000
0.0000
0.0000





Ca
0.0000
0.0000
0.0000





Sr
0.0000
0.0000
0.0000





Ba
0.0000
0.0000
0.0000





Zr
2.2575
2.2574
2.2414





Ti
0.0000
0.0000
0.0000





La
0.0000
0.0000
0.0000





Nb
0.0000
0.0000
0.0000





Ta
0.0000
0.0000
0.0000





Hf
0.0000
0.0000
0.0000





Sn
0.7753
0.0000
0.7673





Ce
0.0000
0.8037
0.7951





Sb
0.0000
0.0000
0.0000





O
48.7951
48.7682
48.4891





Total
100.000
100.0000
100.0000





Li + Na + K
13.4061
13.4057
13.2866





Mg + Ca + Sr + Ba
0.0000
0.0000
0.0000





Zr + Ti + La + Nb + Ta + Hf
2.2575
2.2574
2.2414





Ce/Sn
0.0000

1.0362





Sn + Ce
0.7753
0.8037
1.5624





Si + Al
34.7660
34.7650
34.4205





Rank on bubbles
G
G
G





Acid etching rate (nm/min)
3.9
3.9
3.9





Alkaline etching rate (nm/min)
0.01
0.01
0.01























TABLE 8







Component
8-1
8-2
8-3
8-4
8-5
8-6
8-7


















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8
64.8



B2O3
1.3
1.3
1.3
1.3
1.3
1.3
1.3



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8



Li2O
10.8
10.8
10.8
10.8
10.8
10.8
10.8



Na2O
2.1
2.1
2.1
2.1
2.1
2.1
2.1



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
6.3
6.3
6.3
6.3
6.3
6.3
6.3



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZnO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



ZrO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6



TiO2
0.8
0.8
0.8
0.8
0.8
0.8
0.8



La2O3
0.4
0.4
0.4
0.4
0.4
0.4
0.4



Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7
0.7



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.1
0.1
0.1
0.1
0.1
0.1
0.2


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0100
0.0500
0.1000
0.5000
1.0000
0.0000



SnO2 + CeO2
0.1
0.101
0.105
0.11
0.15
0.2
0.2


(mol %)
Li2O + Na2O + K2O
14.0
14.0
14.0
14.0
14.0
14.0
14.0



MgO + CaO + SrO + BaO
6.3
6.3
6.3
6.3
6.3
6.3
6.3



ZrO2 + TiO2 + La2O3 +
2.5
2.5
2.5
2.5
2.5
2.5
2.5



Nb2O5 + Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6
73.6














Rank on bubbles
D
C
B
B
B
B
D






Component
8-8
8-9
8-10
8-11
8-12
8-13



















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8




B2O3
1.3
1.3
1.3
1.3
1.3
1.3




Al2O3
8.8
8.8
8.8
8.8
8.8
8.8




Li2O
10.8
10.8
10.8
10.8
10.8
10.8




Na2O
2.1
2.1
2.1
2.1
2.1
2.1




K2O
1.1
1.1
1.1
1.1
1.1
1.1




MgO
6.3
6.3
6.3
6.3
6.3
6.3




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZnO
2.3
2.3
2.3
2.3
2.3
2.3




ZrO2
0.6
0.6
0.6
0.6
0.6
0.6




TiO2
0.8
0.8
0.8
0.8
0.8
0.8




La2O3
0.4
0.4
0.4
0.4
0.4
0.4




Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.2
0.2
0.2
0.2
0.2
0.2



components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.0050
0.0250
0.0500
0.2500
0.5000
1.0000




SnO2 + CeO2
0.201
0.205
0.21
0.25
0.3
0.4



(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0




Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3




SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6















Rank on bubbles
B
A
A
A
A
A





Component
8-14
8-15
8-16
8-17
8-18
8-19
8-20


















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8
64.8



B2O3
1.3
1.3
1.3
1.3
1.3
1.3
1.3



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8



Li2O
10.8
10.8
10.8
10.8
10.8
10.8
10.8



Na2O
2.1
2.1
2.1
2.1
2.1
2.1
2.1



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
6.3
6.3
6.3
6.3
6.3
6.3
6.3



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZnO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



ZrO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6



TiO2
0.8
0.8
0.8
0.8
0.8
0.8
0.8



La2O3
0.4
0.4
0.4
0.4
0.4
0.4
0.4



Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7
0.7



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.25
0.25
0.25
0.25
0.25
0.25
0.25


components
CeO2
0
0.001
0.005
0.01
0.05
0.1
0.2


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0000
0.0040
0.0200
0.0400
0.2000
0.4000
0.8000



SnO2 + CeO2
0.25
0.251
0.255
0.26
0.3
0.35
0.45


(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3
6.3



SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5
2.5



La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
7:3.6
73.6
73.6
73.6
73.6
73.6














Rank on bubbles
D
B
A
A
A
A
A






Component
8-21
8-22
8-23
8-24
8-25
8-26



















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8




B2O3
1.3
1.3
1.3
1.3
1.3
1.3




Al2O3
8.8
8.8
8.8
8.8
8.8
8.8




Li2O
10.8
10.8
10.8
10.8
10.8
10.8




Na2O
2.1
2.1
2.1
2.1
2.1
2.1




K2O
1.1
1.1
1.1
1.1
1.1
1.1




MgO
6.3
6.3
6.3
6.3
6.3
6.3




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZnO
2.3
2.3
2.3
2.3
2.3
2.3




ZrO2
0.6
0.6
0.6
0.6
0.6
0.6




TiO2
0.8
0.8
0.8
0.8
0.8
0.8




La2O3
0.4
0.4
0.4
0.4
0.4
0.4




Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.25
0.3
0.3
0.3
0.3
0.3



components
CeO2
0.25
0
0.001
0.005
0.01
0.05



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
1.0000
0.0000
0.0033
0.0167
0.0333
0.1667




SnO2 + CeO2
0.5
0.3
0.301
0.305
0.31
0.35



(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0




Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3




SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6















Rank on bubbles
A
D
B
A
A
A





Components
8-27
8-28
8-29
8-30
8-31
8-32
8-33


















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8
64.8



B2O3
1.3
1.3
1.3
1.3
1.3
1.3
1.3



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8



Li2O
10.8
10.8
10.8
10.8
10.8
10.8
10.8



Na2O
2.1
2.1
2.1
2.1
2.1
2.1
2.1



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
6.3
6.3
6.3
6.3
6.3
6.3
6.3



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZnO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



ZrO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6



TiO2
0.8
0.8
0.8
0.8
0.8
0.8
0.8



La2O3
0.4
0.4
0.4
0.4
0.4
0.4
0.4



Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7
0.7



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.3
0.3
0.3
0.4
0.4
0.4
0.4


components
CeO2
0.1
0.2
0.3
0
0.001
0.005
0.01


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.3333
0.6667
1.0000
0.0000
0.0025
0.0125
0.0250



SnO2 + CeO2
0.4
0.5
0.6
0.4
0.401
0.405
0.41


(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3
6.3



SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5
2.5



La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6
73.6














Rank on bubbles
A
A
A
D
B
B
A






Component
8-34
8-35
8-36
8-37
8-38
8-39



















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8




B2O3
1.3
1.3
1.3
1.3
1.3
1.3




Al2O3
8.8
8.8
8.8
8.8
8.8
8.8




Li2O
10.8
10.8
10.8
10.8
10.8
10.8




Na2O
2.1
2.1
2.1
2.1
2.1
2.1




K2O
1.1
1.1
1.1
1.1
1.1
1.1




MgO
6.3
6.3
6.3
6.3
6.3
6.3




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZnO
2.3
2.3
2.3
2.3
2.3
2.3




ZrO2
0.6
0.6
0.6
0.6
0.6
0.6




TiO2
0.8
0.8
0.8
0.8
0.8
0.8




La2O3
0.4
0.4
0.4
0.4
0.4
0.4




Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.4
0.4
0.4
0.4
0.4
0.5



components
CeO2
0.05
0.1
0.2
0.3
0.4
0



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.1250
0.2500
0.5000
0.7500
1.0000
0.0000




SnO2 + CeO2
0.45
0.5
0.6
0.7
0.8
0.5



(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0




Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3




SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6















Rank on bubbles
A
A
A
A
A
E





Component
8-40
8-41
8-42
8-43
8-44
8-45
8-46


















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8
64.8



B2O3
1.3
1.3
1.3
1.3
1.3
1.3
1.3



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8



Li2O
10.8
10.8
10.8
10.8
10.8
10.8
10.8



Na2O
2.1
2.1
2.1
2.1
2.1
2.1
2.1



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
6.3
6.3
6.3
6.3
6.3
6.3
6.3



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZnO
2.3
2.3
2.3
2.3
2.3
2.3
2.3



ZrO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6



TiO2
0.8
0.8
0.8
0.8
0.8
0.8
0.8



La2O3
0.4
0.4
0.4
0.4
0.4
0.4
0.4



Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7
0.7



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.5
0.5
0.5
0.5
0.5
0.5
0.5


components
CeO2
0.001
0.005
0.01
0.05
0.1
0.2
0.3


(mass %)
Sb2O3
0
0
0
0
0
0
0



CeO2/SnO2
0.0020
0.0100
0.0200
0.1000
0.2000
0.4000
0.6000



SnO2 + CeO2
0.501
0.505
0.51
0.55
0.6
0.7
0.8


(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3
6.3



SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5
2.5



La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6
73.6














Rank on bubbles
C
C
B
B
A
A
A






Component
8-47
8-48
8-49
8-50
8-51
8-52



















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8




B2O3
1.3
1.3
1.3
1.3
1.3
1.3




Al2O3
8.8
8.8
8.8
8.8
8.8
8.8




Li2O
10.8
10.8
10.8
10.8
10.8
10.8




Na2O
2.1
2.1
2.1
2.1
2.1
2.1




K2O
1.1
1.1
1.1
1.1
1.1
1.1




MgO
6.3
6.3
6.3
6.3
6.3
6.3




CaO
0.0
0.0
0.0
0.0
0.0
0.0




SrO
0.0
0.0
0.0
0.0
0.0
0.0




BaO
0.0
0.0
0.0
0.0
0.0
0.0




ZnO
2.3
2.3
2.3
2.3
2.3
2.3




ZrO2
0.6
0.6
0.6
0.6
0.6
0.6




TiO2
0.8
0.8
0.8
0.8
0.8
0.8




La2O3
0.4
0.4
0.4
0.4
0.4
0.4




Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7




Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0




HfO2
0.0
0.0
0.0
0.0
0.0
0.0




Total
100.0
100.0
100.0
100.0
100.0
100.0



Based on glass
SnO2
0.5
0.5
0.6
0.6
0.6
0.6



components
CeO2
0.4
0.5
0
0.001
0.005
0.01



(mass %)
Sb2O3
0
0
0
0
0
0




CeO2/SnO2
0.8000
1.0000
0.0000
0.0017
0.0083
0.0167




SnO2 + CeO2
0.9
1
0.6
0.601
0.605
0.61



(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0




Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3




SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5




La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6















Rank on bubbles
A
A
E
C
C
C


















Component
8-53
8-54
8-55
8-56
8-57
8-58
8-59
Com. Ex. 8-1



















(mol %)
SiO2
64.8
64.8
64.8
64.8
64.8
64.8
64.8
64.8



B2O3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3



Al2O3
8.8
8.8
8.8
8.8
8.8
8.8
8.8
8.8



Li2O
10.8
10.8
10.8
10.8
10.8
10.8
10.8
10.8



Na2O
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1



K2O
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1



MgO
6.3
6.3
6.3
6.3
6.3
6.3
6.3
6.3



CaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



SrO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



ZnO
2.3
2.3
2.3
2.3
2.3
2.3
2.3
2.3



ZrO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6



TiO2
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8



La2O3
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4



Nb2O5
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7



Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



HfO2
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0



Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Based on glass
SnO2
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0


components
CeO2
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0


(mass %)
Sb2O3
0
0
0
0
0
0
0
0.5



CeO2/SnO2
0.0833
0.1667
0.3333
0.5000
0.6667
0.8333
1.0000




SnO2 + CeO2
0.65
0.7
0.8
0.9
1
1.1
1.2
0


(mol %)
Li2O +
14.0
14.0
14.0
14.0
14.0
14.0
14.0
14.0



Na2O + K2O











MgO + CaO +
6.3
6.3
6.3
6.3
6.3
6.3
6.3
6.3



SrO + BaO











ZrO2 + TiO2 +
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5



La2O3 +











Nb2O5 +











Ta2O5 + HfO2











SiO2 + Al2O3
73.6
73.6
73.6
73.6
73.6
73.6
73.6
73.6















Rank on bubbles
C
B
B
B
B
B
B
G




















Component
Com. Ex. 8-2
Com. Ex. 8-3
Com. Ex. 8-4
Com. Ex. 8-5





















(mol %)
SiO2
64.8
64.8
64.8
64.8






B2O3
1.3
1.3
1.3
1.3






Al2O3
8.8
8.8
8.8
8.8






Li2O
10.8
10.8
10.8
10.8






Na2O
2.1
2.1
2.1
2.1






K2O
1.1
1.1
1.1
1.1






MgO
6.3
6.3
6.3
6.3






CaO
0.0
0.0
0.0
0.0






SrO
0.0
0.0
0.0
0.0






BaO
0.0
0.0
0.0
0.0






ZnO
2.3
2.3
2.3
2.3






ZrO2
0.6
0.6
0.6
0.6






TiO2
0.8
0.8
0.8
0.8






La2O3
0.4
0.4
0.4
0.4






Nb2O5
0.7
0.7
0.7
0.7






Ta2O5
0.0
0.0
0.0
0.0






HfO2
0.0
0.0
0.0
0.0






Total
100.0
100.0
100.0
100.0





Based on glass
SnO2
0.25
1
0
1





components
CeO2
0
0
1
1





(mass %)
Sb2O3
0.15
0
0
0






CeO2/SnO2
0.0000
0.0000

1.0000






SnO2 + CeO2
0.25
1
1
2





(mol %)
Li2O +
14.0
14.0
14.0
14.0






Na2O + K2O










MgO + CaO +
6.3
6.3
6.3
6.3






SrO + BaO










ZrO2 + TiO2 +
2.5
2.5
2.5
2.5






La2O3 +










Nb2O5 +










Ta2O5 + HfO2










SiO2 + Al2O3
73.6
73.6
73.6
73.6

















Rank on bubbles
G
G
G
G

















Component (rnass %)
8-1
8-2
8-3
8-4
8-5
8-6
8-7





Si
28.7106
28.7103
28.7092
28.7077
28.6963
28.6648
28.6649


B
0.4434
0.4434
0.4434
0.4434
0.4432
0.4434
0.4434


Al
7.4914
7.4914
7.4911
7.4907
7.4877
7.4910
7.4911


Li
2.3652
2.3651
2.3650
2.3649
2.3640
2.3650
2.3650


Na
1.5232
1.5232
1.5232
1.5231
1.5225
1.5232
1.5232


K
1.3570
1.3569
1.3569
1.3568
1.3563
1.3569
1.3569


Mg
2.4156
2.4156
2.4155
2.4153
2.4144
2.4155
2.4155


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zn
2.3726
2.3726
2.3725
2.3724
2.3714
2.3725
2.3725


Zr
0.8635
0.8635
0.8634
0.8634
0.8630
0.8634
0.8634


Ti
0.6043
0.6043
0.6042
0.6042
0.6040
0.6042
0.6042


La
1.7457
1.7457
1.7457
1.7456
1.7449
1.7457
1.7457


Nb
2.0519
2.0519
2.0518
2.0517
2.0509
2.0518
2.0518


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.0785
0.0785
0.0785
0.0785
0.0785
0.0785
0.1570


Ce
0.0000
0.0008
0.0041
0.0081
0.0407
0.0813
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9771
47.9768
47.9755
47.9742
47.9622
47.9428
47.9454


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
5.2454
5.2452
5.2451
5.2448
5.2428
5.2451
5.2451


Mg + Ca +
2.4156
2.4156
2.4155
2.4153
2.4144
2.4155
2.4155


Sr + Ba









Zr + Ti + La +
5.2654
5.2654
5.2651
5.2649
5.2628
5.2651
5.2651


Nb + Ta + Hf









Ce/Sn
0.0000
0.0102
0.0522
0.1032
0.5185
1.0357
0.0000


Sn + Ce
0.0785
0.0793
0.0826
0.0866
0.1192
0.1598
0.1570


Si + Al
36.2020
36.2017
36.2003
36.1984
36.1840
36.1558
36.1560


Rank on bubbles
D
C
B
B
B
B
D






Component (mass %)
8-8
8-9
8-10
8-11
8-12
8-13






Si
28.6646
28.6635
28.6621
28.6506
28.6363
28.6078



B
0.4434
0.4434
0.4434
0.4432
0.4430
0.4425



Al
7.4910
7.4907
7.4903
7.4873
7.4836
7.4762



Li
2.3650
2.3649
2.3648
2.3639
2.3627
2.3603



Na
1.5232
1.5231
1.5230
1.5224
1.5217
1.5201



K
1.3569
1.3568
1.3568
1.3562
1.3555
1.3542



Mg
2.4154
2.4153
2.4152
2.4143
2.4131
2.4107



Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Zn
2.3725
2.3724
2.3722
2.3713
2.3701
2.3678



Zr
0.8634
0.8634
0.8633
0.8630
0.8626
0.8617



Ti
0.6042
0.6042
0.6042
0.6039
0.6036
0.6030



La
1.7456
1.7456
1.7455
1.7448
1.7439
1.7422



Nb
2.0518
2.0517
2.0516
2.0508
2.0498
2.0477



Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



Sn
0.1570
0.1570
0.1569
0.1569
0.1567
0.1565



Ce
0.0008
0.0041
0.0081
0.0406
0.0812
0.1622



Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000



O
47.9452
47.9439
47.9426
47.9308
47.9162
47.8871



Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000



Li + Na + K
5.2451
5.2448
5.2446
5.2425
5.2399
5.2346



Mg + Ca +
2.4154
2.4153
2.4152
2.4143
2.4131
2.4107



Sr + Ba









Zr + Ti + La +
5.2650
5.2649
5.2646
5.2625
5.2599
5.2546



Nb + Ta + Hf









Ce/Sn
0.0051
0.01261
0.0516
0.2588
0.5182
1.0364



Sn + Ce
0.1578
0.1611
0.1650
0.1975
0.2379
0.3187



Si + Al
36.1556
36.1542
36.1524
36.1379
36.1199
36.0840



Rank on bubbles
B
A
A
A
A
A


















Component (mass %)
8-14
8-15
8-16
8-17
8-18
8-19
8-20
8-21





Si
28.6507
28.6504
28.6492
28.6478
28.6364
28.6221
28.5937
28.5795


B
0.4432
0.4432
0.4432
0.4431
0.4430
0.4427
0.4423
0.4421


Al
7.4873
7.4873
7.4870
7.4866
7.4836
7.4799
7.4724
7.4687


Li
2.3639
2.3638
2.3638
2.3636
2.3627
2.3615
2.3592
2.3580


Na
1.5224
1.5224
1.5223
1.5223
1.5217
1.5209
1.5194
1.5186


K
1.3562
1.3562
1.3561
1.3561
1.3555
1.3549
1.3535
1.3528


Mg
2.4143
2.4142
2.4141
2.4140
2.4131
2.4119
2.4095
2.4083


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zn
2.3713
2.3713
2.3712
2.3711
2.3701
2.3689
2.3666
2.3654


Zr
0.8630
0.8630
0.8630
0.8629
0.8626
0.8621
0.8613
0.8609


T
0.6039
0.6039
0.6039
0.6039
0.6036
0.6033
0.6027
0.6024


La
1.7448
1.7448
1.7447
1.7446
1.7439
1.7431
1.7413
1.7405


Nb
2.0508
2.0508
2.0507
2.0506
2.0498
2.0487
2.0467
2.0457


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.1961
0.1961
0.1961
0.1960
0.1959
0.1958
0.1955
0.1954


Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0812
0.1621
0.2025


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.9321
47.9318
47.9306
47.9293
47.9175
47.9030
47.8738
47.8592


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
5.2425
5.2424
5.2422
5.2420
5.2399
5.2373
5.2321
5.2294


Mg + Ca +
2.4143
2.4142
2.4141
2.4140
2.4131
2.4119
2.4095
2.4083


Sr + Ba










Zr + Ti + La +
5.2625
5.2625
5.2623
5.2620
5.2599
5.2572
5.2520
5.2495


Nb + Ta + Hf










Ce/Sn
0.0000
0.0041
0.0209
0.0413
0.2072
0.4147
0.8292
1.0363


Sn + Ce
0.1961
0.1969
0.2002
0.2041
0.2365
0.2770
0.3576
0.3979


Si + Al
36.1380
36.1377
36.1362
36.1344
36.1200
36.1020
36.0661
36.0482


Rank on bubbles
D
B
A
A
A
A
A
A







Component (mass %)
8-22
8-23
8-24
8-25
8-26
8-27







Si
28.6364
28.6361
28.6350
28.6336
28.6222
28.6079




B
0.4430
0.4430
0.4429
0.4429
0.4427
0.4425




Al
7.4836
7.4835
7.4832
7.4829
7.4799
7.4762




Li
2.3627
2.3627
2.3626
2.3625
2.3615
2.3603




Na
1.5217
1.5216
1.5216
1.5215
1.5209
1.5201




K
1.3555
1.3555
1.3555
1.3554
1.3549
1.3542




Mg
2.4131
2.4130
2.4129
2.4128
2.4119
2.4107




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zn
2.3701
2.3701
2.3700
2.3699
2.3689
2.3678




Zr
0.8626
0.8626
0.8625
0.8625
0.8621
0.8617




T
0.6036
0.6036
0.6036
0.6036
0.6033
0.6030




La
1.7439
1.7439
1.7438
1.7438
1.7431
1.7422




Nb
2.0498
2.0498
2.0497
2.0496
2.0488
2.0477




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sn
0.2351
0.2351
0.2351
0.2351
0.2349
0.2348




Ce
0.0000
0.0008
0.0041
0.0081
0.0406
0.0811




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
47.9189
47.9187
47.9175
47.9158
47.9043
47.8898




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
5.2399
5.2398
5.2397
5.2394
5.2373
5.2346




Mg + Ca +
2.4131
2.4130
2.4129
2.4128
2.4119
2.4107




Sr + Ba










Zr + Ti + La +
5.2599
5.2599
5.2596
5.2595
5.2573
5.2546




Nb + Ta + Hf










Ce/Sn
0.0000
0.0034
0.0174
0.0345
0.1728
0.3454




Sn + Ce
0.2351
0.2359
0.2392
0.2432
0.2755
0.3159




Si + Al
36.1200
36.1196
36.1182
36.1165
36.1021
36.0841




Rank on bubbles
D
B
A
A
A
A





Component (mass %)
8-28
8-29
8-30
8-31
8-32
8-33
8-34
8-35





Si
28.5795
28.5340
28.6080
28.6077
28.6066
28.6052
28.5938
28.5796


B
0.4421
0.4421
0.4425
0.4425
0.4425
0.4425
0.4423
0.4421


Al
7.4687
7.4684
7.4762
7.4761
7.4758
7.4754
7.4725
7.4688


Li
2.3580
2.3579
2.3604
2.3603
2.3602
2.3601
2.3592
2.3580


Na
1.5186
1.5186
1.5201
1.5201
1.5201
1.5200
1.5194
1.5186


K
1.3528
1.3528
1.3542
1.3542
1.3541
1.3541
1.3535
1.3529


Mg
2.4083
2.4082
2.4107
2.4106
2.4105
2.4104
2.4095
2.4083


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zn
2.3654
2.3653
2.3678
2.3678
2.3677
2.3675
2.3665
2.3654


Zr
0.8609
0.8608
0.8617
0.8617
0.8617
0.8616
0.8613
0.8609


Ti
0.6024
0.6024
0.6030
0.6030
0.6030
0.6030
0.6027
0.6024


La
1.7405
1.7404
1.7422
1.7422
1.7421
1.7420
1.7413
1.7405


Nb
2.0457
2.0456
2.0477
2.0477
2.0476
2.0475
2.0467
2.0457


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.2345
0.2344
0.3130
0.3130
0.3130
0.3130
0.3128
0.3126


Ce
0.1620
0.2429
0.0000
0.0008
0.0041
0.0081
0.0405
0.0810


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8606
47.8262
47.8925
47.8923
47.8910
47.8896
47.8779
47.8632


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
5.2294
5.2293
5.2347
5.2346
5.2344
5.2342
5.2321
5.2295


Mg + Ca +
2.4083
2.4082
2.4107
2.4106
2.4105
2.4104
2.4095
2.4083


Sr + Ba










Zr + Ti + La +
5.2495
5.2492
5.2546
5.2546
5.2544
5.2541
5.2520
5.2495


Nb + Ta + Hf










Ce/Sn
0.6908
1.0363
0.0000
0.0026
0.0131
0.0259
0.1295
0.2591


Sn + Ce
0.3965
0.4773
0.3130
0.3138
0.3171
0.3211
0.3533
0.3936


Si + Al
36.0482
36.0024
36.0842
36.0838
36.0824
36.0806
36.0663
36.0484


Rank on bubbles
A
A
D
B
B
A
A
A







Component (mass %)
8-36
8-37
8-38
8-39
8-40
8-41







Si
28.5341
28.5058
28.4776
28.5797
28.5794
28.5782




B
0.4421
0.4416
0.4412
0.4421
0.4421
0.4421




Al
7.4684
7.4610
7.4536
7.4688
7.4687
7.4684




Li
2.3579
2.3556
2.3532
2.3580
2.3580
2.3579




Na
1.5186
1.5171
1.5156
1.5186
1.5186
1.5186




K
1.3528
1.3514
1.3501
1.3529
1.3528
1.3528




Mg
2.4082
2.4058
2.4034
2.4083
2.4083
2.4082




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zn
2.3653
2.3630
2.3606
2.3654
2.3654
2.3653




Zr
0.8608
0.8600
0.8591
0.8609
0.8608
0.8608




Ti
0.6024
0.6018
0.6012
0.6024
0.6024
0.6024




La
1.7404
1.7387
1.7369
1.7405
1.7405
1.7404




Nb
2.0456
2.0436
2.0416
2.0457
2.0457
2.0456




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0001
0.0000
0.0000




Sn
0.3125
0.3121
0.3116
0.3907
0.3907
0.3907




Ce
0.1619
0.2425
0.3229
0.0000
0.0008
0.0040




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
47.8290
47.8000
47.7714
47.8660
47.8658
47.8646




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
5.2293
5.2241
5.2189
5.2295
5.2294
5.2293




Mg + Ca +
2.4082
2.4058
2.4034
2.4083
2.4083
2.4082




Sr + Ba










Zr + Ti + La +
5.2492
5.2441
5.2388
5.2495
5.2494
5.2492




Nb + Ta + Hf










Ce/Sn
0.5181
0.7770
1.0363
0.0000
0.0020
0.0102




Sn + Ce
0.4744
0.5546
0.6345
0.3907
0.3915
0.3947




Si + Al
36.0025
35.9668
35.9312
36.0485
36.0481
36.0466




Rank on bubbles
A
A
A
E
C
C





Component (mass %)
8-42
8-43
8-44
8-45
8-46
8-47
8-48
8-49





Si
28.5768
28.5655
28.5341
28.5057
28.4777
28.4496
28.4042
28.5342


B
0.4420
0.4419
0.4421
0.4416
0.4412
0.4408
0.4407
0.4421


Al
7.4680
7.4651
7.4684
7.4610
7.4537
7.4463
7.4460
7.4685


Li
2.3578
2.3568
2.3579
2.3556
2.3532
2.3509
2.3508
2.3579


Na
1.5185
1.5179
1.5186
1.5171
1.5156
1.5141
1.5140
1.5186


K
1.3527
1.3522
1.3528
1.3515
1.3501
1.3488
1.3487
1.3528


Mg
2.4080
2.4071
2.4082
2.4058
2.4034
2.4010
2.4009
2.4082


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zn
2.3652
2.3643
2.3653
2.3630
2.3606
2.3583
2.3582
2.3653


Zr
0.8608
0.8604
0.8608
0.8600
0.8591
0.8583
0.8582
0.8608


Ti
0.6024
0.6021
0.6024
0.6018
0.6012
0.6006
0.6006
0.6024


La
1.7403
1.7396
1.7404
1.7387
1.7369
1.7352
1.7352
1.7404


Nb
2.0455
2.0447
2.0456
2.0436
2.0416
2.0395
2.0395
2.0456


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.3907
0.3905
0.3906
0.3901
0.3895
0.3890
0.3888
0.4687


Ce
0.0081
0.0405
0.0809
0.1617
0.2422
0.3225
0.4029
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


O
47.8632
47.8514
47.8319
47.8028
47.7740
47.7451
47.7113
47.8345


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
5.2290
5.2269
5.2293
5.2242
5.2189
5.2138
5.2135
5.2293


Mg + Ca +
2.4080
2.4071
2.4082
2.4058
2.4034
2.4010
2.4009
2.4082


Sr + Ba










Zr + Ti + La +
5.2490
5.2468
5.2492
5.2441
5.2388
5.2336
5.2335
5.2492


Nb + Ta + Hf










Ce/Sn
0.0207
0.1037
0.2071
0.4145
0.6218
0.8290
1.0363
0.0000


Sn + Ce
0.3988
0.4310
0.4715
0.5518
0.6317
0.7115
0.7917
0.4687


Si + Al
36.0448
36.0306
36.0025
35.9667
35.9314
35.8959
35.8502
36.0027


Rank or bubbles
B
B
A
A
A
A
A
E







Component (mass %)
8-50
8-51
8-52
8-53
8-54
8-55







Si
28.5339
28.5328
28.5314
28.5201
28.5059
28.4778




B
0.4421
0.4420
0.4420
0.4419
0.4416
0.4412




Al
7.4684
7.4681
7.4677
7.4648
7.4611
7.4537




Li
2.3579
2.3578
2.3577
2.3567
2.3556
2.3532




Na
1.5186
1.5185
1.5184
1.5178
1.5171
1.5156




K
1.3528
1.3527
1.3527
1.3521
1.3515
1.3501




Mg
2.4081
2.4081
2.4079
2.4070
2.4058
2.4034




Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Zn
2.3653
2.3652
2.3651
2.3642
2.3630
2.3606




Zr
0.8608
0.8608
0.8607
0.8604
0.8600
0.8591




Ti
0.6024
0.6024
0.6024
0.6021
0.6018
0.6012




La
1.7404
1.7403
1.7402
1.7395
1.7387
1.7370




Nb
2.0456
2.0455
2.0454
2.0446
2.0436
2.0416




Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




Sn
0.4687
0.4686
0.4686
0.4684
0.4680
0.4674




Ce
0.0008
0.0040
0.0081
0.0404
0.0808
0.1614




Sb
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000




O
47.8342
47.8332
47.8317
47.8200
47.8055
47.7767




Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000




Li + Na + K
5.2293
5.2290
5.2288
5.2266
5.2242
5.2189




Mg + Ca +
2.4081
2.4081
2.4079
2.4070
2.4058
2.4034




Sr + Ba










Zr + Ti + La +
5.2492
5.2490
5.2487
5.2466
5.2441
5.2389




Nb + Ta + Hf










Ce/Sn
0.0017
0.0085
0.0173
0.0863
0.1726
0.3453




Sn + Ce
0.4695
0.4726
0.4767
0.5088
0.5488
0.6288




Si + Al
36.0023
36.0009
35.9991
35.9849
35.9670
35.9315




Rank or bubbles
C
C
C
C
B
B
















Cornponent (mass %)
8-56
8-57
8-58
8-59
Com. Ex. 8-1
Com. Ex. 8-2





Si
28.4496
28.4043
28.3763
28.3617
28.5799
28.6086


B
0.4408
0.4407
0.4403
0.4401
0.4421
0.4425


Al
7.4463
7.4460
7.4387
7.4348
7.4689
7.4763


Li
2.3509
2.3508
2.3485
2.3256
2.3580
2.3604


Na
1.5141
1.5140
1.5125
1.5117
1.5187
1.5202


K
1.3488
1.3487
1.3474
1.3467
1.3529
1.3542


Mg
2.4010
2.4009
2.3986
2.3973
2.4083
2.4107


Ca
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sr
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Ba
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Zn
2.3583
2.3582
2.3559
2.3547
2.3655
2.3678


Zr
0.8583
0.8582
0.8574
0.8569
0.8609
0.8617


Ti
0.6006
0.6006
0.6000
0.5997
0.6024
0.6031


La
1.7352
1.7352
1.7335
1.7326
1.7405
1.7422


Nb
2.0396
2.0395
2.0375
2.0364
2.0457
2.0.478


Ta
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Hf
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000


Sn
0.4668
0.4666
0.4660
0.4655
0.0000
0.1957


Ce
0.2418
0.3223
0.4024
0.4824
0.0000
0.0000


Sb
0.0000
0.0000
0.0000
0.0000
0.4136
0.1227


O
47.7479
47.7140
47.6850
47.6539
47.8426
47.8861


Total
100.0000
100.0000
100.0000
100.0000
100.0000
100.0000


Li + Na + K
5.2138
5.2135
5.2084
5.1840
5.2296
5.2348


Mg + Ca +
2.4010
2.4009
2.3986
2.3973
2.4083
2.4107


Sr + Ba








Zr + Ti + La +
5.2337
5.2335
5.2284
5.2256
5.2495
5.2548


Nb + Ta + Hf








Ce/Sn
0.5180
0.6907
0.8635
1.0363

0.0000


Sn + Ce
0.7086
0.7889
0.8684
0.9479
0.0000
0.1957


Si + Al
35.13959
35.8503
35.8150
35.7965
36.0488
36.0849


Rank on bubbles
B
B
B
B
G
G








Cornponent (mass %)
Com. Ex. 8-3
Com. Ex. 8-4
Com. Ex. 8-5








Si
28.4047
28.4211
28.1513





B
0.4407
0.4403
0.4382





Al
7.4461
7.4388
7.3185





Li
2.3508
2.3486
2.3155





Na
1.5140
1.5125
1.5052





K
1.3487
1.3474
1.3409





Mg
2.4010
2.3986
2.3869





Ca
0.0000
0.0000
0.0000





Sr
0.0000
0.0000
0.0000





Ba
0.0000
0.0000
0.0000





Zn
2.3582
2.3559
2.3445





Zr
0.8582
0.8574
0.8532





Ti
0.6006
0.6000
0.5971





La
1.7352
1.7335
1.7251





Nb
2.0395
2.0375
2.0276





Ta
0.0000
0.0000
0.0000





Hf
0.0000
0.0000
0.0000





Sn
0.7775
0.0000
0.7700





Ce
0.0000
0.8053
0.7980





Sb
0.0000
0.0000
0.0000





O
47.7248
47.7031
47.4280





Total
100.0000
100.0000
100.0000





Li + Na + K
5.2135
5.2085
5.1616





Mg + Ca +
2.4010
2.3986
2.3869





Sr + Ba








Zr + Ti + La +
5.2335
5.2284
5.2030





Nb + Ta + Hf








Ce/Sn
0.0000

1.0364





Sn + Ce
0.7775
0.8053
1.5680





Si + Al
35.8508
35.8599
35.4698





Rank on bubbles
G
G
G









Embodiment B
(1) Melting of the Glass

The basic composition indicated as No. 1 in Table 9 was employed in the glasses of Nos. 1-1 to Nos. 1-339. The basic composition indicated as No. 2 in Table 9 was employed in the glasses of Nos. 2-1 to 2-339. The basic composition indicated as No. 3 in Table 9 was employed in the glasses of Nos. 3-1 to 3-339. The basic composition indicated as No. 4 in Table 9 was employed in the glasses of Nos. 4-1 to 4-339. The basic composition indicated as No. 5 in Table 9 was employed in the glasses of Nos. 5-1 to 5-339. The basic composition indicated as No. 6 in Table 9 was employed in the glasses of Nos. 6-1 to 6-339. The basic composition indicated as No. 7 in Table 9 was employed in the glasses of Nos. 7-1 to 7-339. For each of the glasses of Nos. 1 to 7, starting materials such as oxides, carbonates, nitrates, and hydroxides, as well as clarifying agents such as SnO2 and CeO2, were weighed out and mixed to obtain mixed starting materials so as to obtain glasses comprising the quantities of SnO2 and CeO2 of Nos. 1 to 339, indicated in Table 10, that were added based on the total amount of the basic compositions of the glasses in Table 9. The starting materials were charged to a melting vessel; heated, melted, clarified, and stirred for 6 hours over a range of 1,400 to 1,600° C. to produce homogeneous glass melts containing neither bubbles nor unmelted material. After being maintained for 6 hours at a range of 1,400 to 1,600° C. as stated above, the temperature of each glass melt was decreased (lowered), and the glass melt was maintained for 1 hour at a range of 1,200 to 1,400° C. to markedly enhance the clarifying effect. In particular, glass melts in which Sn and Ce were both present were found to exhibit highly pronounced clarifying effects.


The number of glasses prepared in the present embodiment was 339×7=2,373. For example, glass No. 1-1 had the basic composition indicated by No. 1 in Table 9, with the components added based on the total amount of the basic composition indicated by No. 1 in Table 10. Glass No. 3-150 had the basic composition indicated by No. 3 in Table 9, with the components added based on the total amount of the basic composition indicated by No. 150 in Table 10. And glass No. 7-339 had the basic composition indicated by No. 7 in Table 9, with the components added based on the total amount of the basic composition indicated by No. 339 in Table 10.
















TABLE 9





No.
1
2
3
4
5
6
7






















SiO2
67.3
66.2
72.0
69.0
68.7
68.6
64.8


B2O3




2.0

1.3


Al2O3
9.2
9.3
6.0
7.0
7.7
8.8
8.8


P2O5





0.2



Li2O
8.1
8.1
8.2
8.0
14.0
15.3
10.8


Na2O
11.2
11.2
10.4
11.5
3.5
3.2
2.1


K2O
0.3
0.4
0.0
0.1
1.1
1.1
1.1


MgO
1.1
1.5
0.0
1.0
0.0
0.0
6.3


CaO
1.8
2.3
2.5
2.0
0.0
0.0
0.0


SrO
0.0
0.0
0.0
0.4
0.0
0.0
0.0


BaO
0.0
0.0
0.0
0.0
0.0
0.0
0.0


ZnO






2.3


ZrO2
1.0
1.0
0.9
0.9
1.0
0.0
0.6


TiO2
0.0
0.0
0.0
0.0
1.5
1.6
0.8


La2O3
0.0
0.0
0.0
0.0
0.5
0.6
0.4


Nb2O5
0.0
0.0
0.0
0.0
0.0
0.6
0.7


Ta2O5
0.0
0.0
0.0
0.0
0.0
0.0
0.0


HfO2
0.0
0.0
0.0
0.1
0.0
0.0
0.0


Total
100.0
100.0
100.0
100.0
100.0
100.0
100.0


Li2O + Na2O + K2O
19.6
19.7
18.6
19.6
18.6
19.6
14.0


MgO + CaO + SrO + BaO
2.9
3.8
2.5
3.4
0.0
0.0
6.3


ZrO2 + TiO2 + La2O3 +
1.0
1.0
0.9
1.0
3.0
2.8
2.5


Nb2O5 + Ta2O5 + HfO2









SiO2 + Al2O3
76.5
75.5
78.0
76.0
76.4
77.4
73.6



















TABLE 10









Added amount based on basic components




(mass %)
SnO2/












No.
SnO2
CeO2
Sb2O3
SnO2 + CeO2
(SnO2 + CeO2)















1
0.01
0.09
0.00
0.10
0.10


2
0.03
0.07
0.00
0.10
0.30


3
0.05
0.05
0.00
0.10
0.50


4
0.07
0.03
0.00
0.10
0.70


5
0.09
0.01
0.00
0.10
0.90


6
0.01
0.29
0.00
0.30
0.03


7
0.03
0.27
0.00
0.30
0.10


8
0.05
0.25
0.00
0.30
0.17


9
0.07
0.23
0.00
0.30
0.23


10
0.1
0.2
0.00
0.30
0.33


11
0.15
0.15
0.00
0.30
0.50


12
0.2
0.1
0.00
0.30
0.67


13
0.23
0.07
0.00
0.30
0.77


14
0.25
0.05
0.00
0.30
0.83


15
0.27
0.03
0.00
0.30
0.90


16
0.29
0.01
0.00
0.30
0.97


17
0.01
0.49
0.00
0.50
0.02


18
0.05
0.45
0.00
0.50
0.10


19
0.1
0.4
0.00
0.50
0.20


20
0.15
0.35
0.00
0.50
0.30


21
0.2
0.3
0.00
0.50
0.40


22
0.25
0.25
0.00
0.50
0.50


23
0.3
0.2
0.00
0.50
0.60


24
0.35
0.15
0.00
0.50
0.70


25
0.4
0.1
0.00
0.50
0.80


26
0.45
0.05
0.00
0.50
0.90


27
0.49
0.01
0.00
0.50
0.98


28
0.02
0.78
0.00
0.80
0.03


29
0.05
0.75
0.00
0.80
0.06


30
0.1
0.7
0.00
0.80
0.13


31
0.15
0.65
0.00
0.80
0.19


32
0.2
0.6
0.00
0.80
0.25


33
0.25
0.55
0.00
0.80
0.31


34
0.3
0.5
0.00
0.80
0.38


35
0.35
0.45
0.00
0.80
0.44


36
0.4
0.4
0.00
0.80
0.50


37
0.45
0.35
0.00
0.80
0.56


38
0.5
0.3
0.00
0.80
0.63


39
0.55
0.25
0.00
0.80
0.69


40
0.6
0.2
0.00
0.80
0.75


41
0.65
0.15
0.00
0.80
0.81


42
0.7
0.1
0.00
0.80
0.88


43
0.75
0.05
0.00
0.80
0.94


44
0.79
0.01
0.00
0.80
0.99


45
0.02
0.98
0.00
1.00
0.02


46
0.05
0.95
0.00
1.00
0.05


47
0.1
0.9
0.00
1.00
0.10


48
0.15
0.85
0.00
1.00
0.15


49
0.2
0.8
0.00
1.00
0.20


50
0.3
0.7
0.00
1.00
0.30


51
0.4
0.6
0.00
1.00
0.40


52
0.5
0.5
0.00
1.00
0.50


53
0.6
0.4
0.00
1.00
0.60


54
0.7
0.3
0.00
1.00
0.70


55
0.8
0.2
0.00
1.00
0.80


56
0.85
0.15
0.00
1.00
0.85


57
0.9
0.1
0.00
1.00
0.90


58
0.95
0.05
0.00
1.00
0.95


59
0.98
0.02
0.00
1.00
0.98


60
0.03
1.17
0.00
1.20
0.03


61
0.05
1.15
0.00
1.20
0.04


62
0.08
1.12
0.00
1.20
0.07


63
0.1
1.1
0.00
1.20
0.08


64
0.12
1.08
0.00
1.20
0.10


65
0.15
1.05
0.00
1.20
0.13


66
0.2
1
0.00
1.20
0.17


67
0.3
0.9
0.00
1.20
0.25


68
0.4
0.8
0.00
1.20
0.33


69
0.5
0.7
0.00
1.20
0.42


70
0.6
0.6
0.00
1.20
0.50


71
0.7
0.5
0.00
1.20
0.58


72
0.8
0.4
0.00
1.20
0.67


73
0.9
0.3
0.00
1.20
0.75


74
1
0.2
0.00
1.20
0.83


75
1.1
0.1
0.00
1.20
0.92


76
1.15
0.05
0.00
1.20
0.96


77
1.18
0.02
0.00
1.20
0.98


78
0.03
1.47
0.00
1.50
0.02


79
0.05
1.45
0.00
1.50
0.03


80
0.07
1.43
0.00
1.50
0.05


81
0.1
1.4
0.00
1.50
0.07


82
0.2
1.3
0.00
1.50
0.13


83
0.3
1.2
0.00
1.50
0.20


84
0.4
1.1
0.00
1.50
0.27


85
0.5
1
0.00
1.50
0.33


86
0.6
0.9
0.00
1.50
0.40


87
0.7
0.8
0.00
1.50
0.47


88
0.75
0.75
0.00
1.50
0.50


89
0.8
0.7
0.00
1.50
0.53


90
0.9
0.6
0.00
1.50
0.60


91
1
0.5
0.00
1.50
0.67


92
1.1
0.4
0.00
1.50
0.73


93
1.2
0.3
0.00
1.50
0.80


94
1.3
0.2
0.00
1.50
0.87


95
1.4
0.1
0.00
1.50
0.93


96
1.43
0.07
0.00
1.50
0.95


97
1.45
0.05
0.00
1.50
0.97


98
1.47
0.03
0.00
1.50
0.98


99
1.48
0.02
0.00
1.50
0.99


100
0.02
1.68
0.00
1.70
0.01


101
0.05
1.65
0.00
1.70
0.03


102
0.07
1.63
0.00
1.70
0.04


103
0.1
1.6
0.00
1.70
0.06


104
0.2
1.5
0.00
1.70
0.12


105
0.3
1.4
0.00
1.70
0.18


106
0.4
1.3
0.00
1.70
0.24


107
0.5
1.2
0.00
1.70
0.29


108
0.6
1.1
0.00
1.70
0.35


109
0.7
1
0.00
1.70
0.41


110
0.8
0.9
0.00
1.70
0.47


111
0.9
0.8
0.00
1.70
0.53


112
0.85
0.85
0.00
1.70
0.50


113
0.9
0.8
0.00
1.70
0.53


114
1
0.7
0.00
1.70
0.59


115
1.1
0.6
0.00
1.70
0.65


116
1.2
0.5
0.00
1.70
0.71


117
1.3
0.4
0.00
1.70
0.76


118
1.4
0.3
0.00
1.70
0.82


119
1.5
0.2
0.00
1.70
0.88


120
1.6
0.1
0.00
1.70
0.94


121
1.65
0.05
0.00
1.70
0.97


122
1.68
0.02
0.00
1.70
0.99


123
0.02
1.98
0.00
2.00
0.01


124
0.05
1.95
0.00
2.00
0.03


125
0.07
1.93
0.00
2.00
0.04


126
0.1
1.9
0.00
2.00
0.05


127
0.2
1.8
0.00
2.00
0.10


128
0.3
1.7
0.00
2.00
0.15


129
0.4
1.6
0.00
2.00
0.20


130
0.5
1.5
0.00
2.00
0.25


131
0.6
1.4
0.00
2.00
0.30


132
0.7
1.3
0.00
2.00
0.35


133
0.8
1.2
0.00
2.00
0.40


134
0.9
1.1
0.00
2.00
0.45


135
1
1
0.00
2.00
0.50


136
1.1
0.9
0.00
2.00
0.55


137
1.2
0.8
0.00
2.00
0.60


138
1.3
0.7
0.00
2.00
0.65


139
1.4
0.6
0.00
2.00
0.70


140
1.5
0.5
0.00
2.00
0.75


141
1.6
0.4
0.00
2.00
0.80


142
1.7
0.3
0.00
2.00
0.85


143
1.8
0.2
0.00
2.00
0.90


144
1.9
0.1
0.00
2.00
0.95


145
1.95
0.05
0.00
2.00
0.98


146
1.97
0.03
0.00
2.00
0.99


147
1.98
0.02
0.00
2.00
0.99


148
0.05
2.25
0.00
2.30
0.02


149
0.1
2.2
0.00
2.30
0.04


150
0.2
2.1
0.00
2.30
0.09


151
0.3
2
0.00
2.30
0.13


152
0.4
1.9
0.00
2.30
0.17


153
0.5
1.8
0.00
2.30
0.22


154
0.6
1.7
0.00
2.30
0.26


155
0.7
1.6
0.00
2.30
0.30


156
0.8
1.5
0.00
2.30
0.35


157
0.9
1.4
0.00
2.30
0.39


158
1
1.3
0.00
2.30
0.43


159
1.1
1.2
0.00
2.30
0.48


160
1.2
1.1
0.00
2.30
0.52


161
1.3
1
0.00
2.30
0.57


162
1.4
0.9
0.00
2.30
0.61


163
1.5
0.8
0.00
2.30
0.65


164
1.6
0.7
0.00
2.30
0.70


165
1.7
0.6
0.00
2.30
0.74


166
1.8
0.5
0.00
2.30
0.78


167
1.9
0.4
0.00
2.30
0.83


168
2
0.3
0.00
2.30
0.87


169
2.1
0.2
0.00
2.30
0.91


170
2.2
0.1
0.00
2.30
0.96


171
2.25
0.05
0.00
2.30
0.98


172
2.27
0.03
0.00
2.30
0.99


173
0.05
2.45
0.00
2.50
0.02


174
0.07
2.43
0.00
2.50
0.03


175
0.1
2.4
0.00
2.50
0.04


176
0.2
2.3
0.00
2.50
0.08


177
0.3
2.2
0.00
2.50
0.12


178
0.4
2.1
0.00
2.50
0.16


179
0.5
2
0.00
2.50
0.20


180
0.6
1.9
0.00
2.50
0.24


181
0.7
1.8
0.00
2.50
0.28


182
0.8
1.7
0.00
2.50
0.32


183
0.9
1.6
0.00
2.50
0.36


184
1
1.5
0.00
2.50
0.40


185
1.1
1.4
0.00
2.50
0.44


186
1.2
1.3
0.00
2.50
0.48


187
1.3
1.2
0.00
2.50
0.52


188
1.4
1.1
0.00
2.50
0.56


189
1.5
1
0.00
2.50
0.60


190
1.6
0.9
0.00
2.50
0.64


191
1.7
0.8
0.00
2.50
0.68


192
1.8
0.7
0.00
2.50
0.72


193
1.9
0.6
0.00
2.50
0.76


194
2
0.5
0.00
2.50
0.80


195
2.1
0.4
0.00
2.50
0.84


196
2.2
0.3
0.00
2.50
0.88


197
2.3
0.2
0.00
2.50
0.92


198
2.4
0.1
0.00
2.50
0.96


199
2.45
0.05
0.00
2.50
0.98


200
2.47
0.03
0.00
2.50
0.99


201
2.48
0.02
0.00
2.50
0.99


202
0.06
2.64
0.00
2.70
0.02


203
0.08
2.62
0.00
2.70
0.03


204
0.1
2.6
0.00
2.70
0.04


205
0.2
2.5
0.00
2.70
0.07


206
0.3
2.4
0.00
2.70
0.11


207
0.4
2.3
0.00
2.70
0.15


208
0.5
2.2
0.00
2.70
0.19


209
0.6
2.1
0.00
2.70
0.22


210
0.7
2
0.00
2.70
0.26


211
0.8
1.9
0.00
2.70
0.30


212
0.9
1.8
0.00
2.70
0.33


213
1
1.7
0.00
2.70
0.37


214
1.1
1.6
0.00
2.70
0.41


215
1.2
1.5
0.00
2.70
0.44


216
1.3
1.4
0.00
2.70
0.48


217
1.35
1.35
0.00
2.70
0.50


218
1.4
1.3
0.00
2.70
0.52


219
1.5
1.2
0.00
2.70
0.56


220
1.6
1.1
0.00
2.70
0.59


221
1.7
1
0.00
2.70
0.63


222
1.8
0.9
0.00
2.70
0.67


223
1.9
0.8
0.00
2.70
0.70


224
2
0.7
0.00
2.70
0.74


225
2.1
0.6
0.00
2.70
0.78


226
2.2
0.5
0.00
2.70
0.81


227
2.3
0.4
0.00
2.70
0.85


228
2.4
0.3
0.00
2.70
0.89


229
2.5
0.2
0.00
2.70
0.93


230
2.6
0.1
0.00
2.70
0.96


231
2.65
0.05
0.00
2.70
0.98


232
2.67
0.03
0.00
2.70
0.99


233
0.06
2.94
0.00
3.00
0.02


234
0.08
2.92
0.00
3.00
0.03


235
0.1
2.9
0.00
3.00
0.03


236
0.2
2.8
0.00
3.00
0.07


237
0.3
2.7
0.00
3.00
0.10


238
0.4
2.6
0.00
3.00
0.13


239
0.5
2.5
0.00
3.00
0.17


240
0.6
2.4
0.00
3.00
0.20


241
0.7
2.3
0.00
3.00
0.23


242
0.8
2.2
0.00
3.00
0.27


243
0.9
2.1
0.00
3.00
0.30


244
1
2
0.00
3.00
0.33


245
1.1
1.9
0.00
3.00
0.37


246
1.2
1.8
0.00
3.00
0.40


247
1.3
1.7
0.00
3.00
0.43


248
1.4
1.6
0.00
3.00
0.47


249
1.5
1.5
0.00
3.00
0.50


250
1.6
1.4
0.00
3.00
0.53


251
1.7
1.3
0.00
3.00
0.57


252
1.8
1.2
0.00
3.00
0.60


253
1.9
1.1
0.00
3.00
0.63


254
2
1
0.00
3.00
0.67


255
2.1
0.9
0.00
3.00
0.70


256
2.2
0.8
0.00
3.00
0.73


257
2.3
0.7
0.00
3.00
0.77


258
2.4
0.6
0.00
3.00
0.80


259
2.5
0.5
0.00
3.00
0.83


260
2.6
0.4
0.00
3.00
0.87


261
2.7
0.3
0.00
3.00
0.90


262
2.8
0.2
0.00
3.00
0.93


263
2.9
0.1
0.00
3.00
0.97


264
2.95
0.05
0.00
3.00
0.98


265
2.97
0.03
0.00
3.00
0.99


266
0.07
3.13
0.00
3.20
0.02


267
0.1
3.1
0.00
3.20
0.03


268
0.2
3
0.00
3.20
0.06


269
0.3
2.9
0.00
3.20
0.09


270
0.4
2.8
0.00
3.20
0.13


271
0.5
2.7
0.00
3.20
0.16


272
0.6
2.6
0.00
3.20
0.19


273
0.7
2.5
0.00
3.20
0.22


274
0.8
2.4
0.00
3.20
0.25


275
0.9
2.3
0.00
3.20
0.28


276
1
2.2
0.00
3.20
0.31


277
1.1
2.1
0.00
3.20
0.34


278
1.2
2
0.00
3.20
0.38


279
1.3
1.9
0.00
3.20
0.41


280
1.4
1.8
0.00
3.20
0.44


281
1.5
1.7
0.00
3.20
0.47


282
1.6
1.6
0.00
3.20
0.50


283
1.7
1.5
0.00
3.20
0.53


284
1.8
1.4
0.00
3.20
0.56


285
1.9
1.3
0.00
3.20
0.59


286
2
1.2
0.00
3.20
0.63


287
2.1
1.1
0.00
3.20
0.66


288
2.2
1
0.00
3.20
0.69


289
2.3
0.9
0.00
3.20
0.72


290
2.4
0.8
0.00
3.20
0.75


291
2.5
0.7
0.00
3.20
0.78


292
2.6
0.6
0.00
3.20
0.81


293
2.7
0.5
0.00
3.20
0.84


294
2.8
0.4
0.00
3.20
0.88


295
2.9
0.3
0.00
3.20
0.91


296
3
0.2
0.00
3.20
0.94


297
3.1
0.1
0.00
3.20
0.97


298
3.15
0.05
0.00
3.20
0.98


299
3.16
0.04
0.00
3.20
0.99


300
0.07
3.43
0.00
3.50
0.02


301
0.09
3.41
0.00
3.50
0.03


302
0.1
3.4
0.00
3.50
0.03


303
0.2
3.3
0.00
3.50
0.06


304
0.3
3.2
0.00
3.50
0.09


305
0.4
3.1
0.00
3.50
0.11


306
0.5
3
0.00
3.50
0.14


307
0.6
2.9
0.00
3.50
0.17


308
0.7
2.8
0.00
3.50
0.20


309
0.8
2.7
0.00
3.50
0.23


310
0.9
2.6
0.00
3.50
0.26


311
1
2.5
0.00
3.50
0.29


312
1.1
2.4
0.00
3.50
0.31


313
1.2
2.3
0.00
3.50
0.34


314
1.3
2.2
0.00
3.50
0.37


315
1.4
2.1
0.00
3.50
0.40


316
1.5
2
0.00
3.50
0.43


317
1.6
1.9
0.00
3.50
0.46


318
1.7
1.8
0.00
3.50
0.49


319
1.75
1.75
0.00
3.50
0.50


320
1.8
1.7
0.00
3.50
0.51


321
1.9
1.6
0.00
3.50
0.54


322
2
1.5
0.00
3.50
0.57


323
2.1
1.4
0.00
3.50
0.60


324
2.2
1.3
0.00
3.50
0.63


325
2.3
1.2
0.00
3.50
0.66


326
2.4
1.1
0.00
3.50
0.69


327
2.5
1
0.00
3.50
0.71


328
2.6
0.9
0.00
3.50
0.74


329
2.7
0.8
0.00
3.50
0.77


330
2.8
0.7
0.00
3.50
0.80


331
2.9
0.6
0.00
3.50
0.83


332
3
0.5
0.00
3.50
0.86


333
3.1
0.4
0.00
3.50
0.89


334
3.2
0.3
0.00
3.50
0.91


335
3.3
0.2
0.00
3.50
0.94


336
3.4
0.1
0.00
3.50
0.97


337
3.43
0.07
0.00
3.50
0.98


338
3.45
0.05
0.00
3.50
0.99


339
3.46
0.04
0.00
3.50
0.99


Com.
2.16
2.75
0
4.91
0.44


Ex. 1


Com.
2.21
2.8
0
5.01
0.44


Ex. 2


Com.
2.4
2.9
0
5.3
0.45


Ex. 3


Com.
2.39
3.05
0
5.44
0.44


Ex. 4


Com.
3.52
8.56
0
12.08
0.29


Ex. 5


Com.
0
0
0.50
0.00



Ex. 6


Com.
0.25
0
0.15
0.25
1.00


Ex. 7


Com.
1
0
0
1
1.00


Ex. 8


Com.
0
1
0
1
0.00


Ex. 9




















TABLE 11






Bubbles
Unmelted
Acid etching
Alkaline etching


No.
rank
rank
rate (nm/min)
rate (nm/min)







1-1
E
S
1.7
0.07


1-2
E
S
1.7
0.07


1-3
B
S
1.7
0.07


1-4
B
S
1.7
0.07


1-5
C
S
1.7
0.07


1-6
E
S
1.7
0.07


1-7
E
S
1.7
0.07


1-8
E
S
1.7
0.07


1-9
E
S
1.7
0.07


1-10
D
S
1.7
0.07


1-11
B
S
1.7
0.07


1-12
B
S
1.7
0.07


1-13
B
S
1.7
0.07


1-14
B
S
1.7
0.07


1-15
C
S
1.7
0.07


1-16
C
S
1.7
0.07


1-17
D
S
1.7
0.07


1-18
D
S
1.7
0.07


1-19
D
S
1.7
0.07


1-20
D
S
1.7
0.07


1-21
C
S
1.7
0.07


1-22
A
S
1.7
0.07


1-23
A
S
1.7
0.07


1-24
A
S
1.7
0.07


1-25
A
S
1.7
0.07


1-26
B
S
1.7
0.07


1-27
B
S
1.7
0.07


1-28
D
S
1.7
0.07


1-29
D
S
1.7
0.07


1-30
D
S
1.7
0.07


1-31
D
S
1.7
0.07


1-32
D
S
1.7
0.07


1-33
D
S
1.7
0.07


1-34
C
S
1.7
0.07


1-35
C
S
1.7
0.07


1-36
A
S
1.7
0.07


1-37
A
S
1.7
0.07


1-38
S
S
1.7
0.07


1-39
S
S
1.7
0.07


1-40
S
S
1.7
0.07


1-41
A
S
1.7
0.07


1-42
A
S
1.7
0.07


1-43
B
S
1.7
0.07


1-44
B
S
1.7
0.07


1-45
D
S
1.7
0.07


1-46
D
S
1.7
0.07


1-47
D
S
1.7
0.07


1-48
D
S
1.7
0.07


1-49
D
S
1.7
0.07


1-50
D
S
1.7
0.07


1-51
A
S
1.7
0.07


1-52
S
S
1.7
0.07


1-53
S
S
1.7
0.07


1-54
S
S
1.7
0.07


1-55
S
S
1.7
0.07


1-56
A
S
1.7
0.07


1-57
A
S
1.7
0.07


1-58
B
S
1.7
0.07


1-59
B
S
1.7
0.07


1-60
D
S
1.7
0.07


1-61
D
S
1.7
0.07


1-62
D
S
1.7
0.07


1-63
D
S
1.7
0.07


1-64
D
S
1.7
0.07


1-65
D
S
1.7
0.07


1-66
D
S
1.7
0.07


1-67
D
S
1.7
0.07


1-68
C
S
1.7
0.07


1-69
B
S
1.7
0.07


1-70
S
S
1.7
0.07


1-71
S
S
1.7
0.07


1-72
S
S
1.7
0.07


1-73
S
S
1.7
0.07


1-74
S
S
1.7
0.07


1-75
A
A
1.7
0.07


1-76
B
A
1.7
0.07


1-77
B
A
1.7
0.07


1-78
D
S
1.7
0.07


1-79
D
S
1.7
0.07


1-80
D
S
1.7
0.07


1-81
D
S
1.7
0.07


1-82
D
S
1.7
0.07


1-83
D
S
1.7
0.07


1-84
D
S
1.7
0.07


1-85
C
S
1.7
0.07


1-86
B
S
1.7
0.07


1-87
S
S
1.7
0.07


1-88
S
S
1.7
0.07


1-89
S
S
1.7
0.07


1-90
S
S
1.7
0.07


1-91
S
S
1.7
0.07


1-92
S
A
1.7
0.07


1-93
S
A
1.7
0.07


1-94
A
A
1.7
0.07


1-95
A
A
1.7
0.07


1-96
B
A
1.7
0.07


1-97
B
A
1.7
0.07


1-98
B
A
1.7
0.07


1-99
B
A
1.7
0.07


1-100
D
B
1.7
0.07


1-101
D
B
1.7
0.07


1-102
D
B
1.7
0.07


1-103
D
B
1.7
0.07


1-104
D
B
1.7
0.07


1-105
D
B
1.7
0.07


1-106
D
B
1.7
0.07


1-107
C
B
1.7
0.07


1-108
B
B
1.7
0.07


1-109
B
B
1.7
0.07


1-110
S
B
1.7
0.07


1-111
S
B
1.7
0.07


1-112
S
B
1.7
0.07


1-113
S
B
1.7
0.07


1-114
S
B
1.7
0.07


1-115
S
B
1.7
0.07


1-116
S
B
1.7
0.07


1-117
S
B
1.7
0.07


1-118
S
B
1.7
0.07


1-119
A
B
1.7
0.07


1-120
A
B
1.7
0.07


1-121
B
B
1.7
0.07


1-122
B
B
1.7
0.07


1-123
D
B
1.7
0.07


1-124
D
B
1.7
0.07


1-125
D
B
1.7
0.07


1-126
D
B
1.7
0.07


1-127
D
B
1.7
0.07


1-128
D
B
1.7
0.07


1-129
D
B
1.7
0.07


1-130
C
B
1.7
0.07


1-131
C
B
1.7
0.07


1-132
B
B
1.7
0.07


1-133
B
B
1.7
0.07


1-134
S
B
1.7
0.07


1-135
S
B
1.7
0.07


1-136
S
B
1.7
0.07


1-137
S
B
1.7
0.07


1-138
S
B
1.7
0.07


1-139
S
B
1.7
0.07


1-140
S
B
1.7
0.07


1-141
S
B
1.7
0.07


1-142
S
B
1.7
0.07


1-143
A
B
1.7
0.07


1-144
A
B
1.7
0.07


1-145
B
B
1.7
0.07


1-146
B
B
1.7
0.07


1-147
B
B
1.7
0.07


1-148
D
B
1.7
0.07


1-149
D
B
1.7
0.07


1-150
D
B
1.7
0.07


1-151
D
B
1.7
0.07


1-152
D
B
1.7
0.07


1-153
C
B
1.7
0.07


1-154
C
B
1.7
0.07


1-155
C
B
1.7
0.07


1-156
C
B
1.7
0.07


1-157
B
B
1.7
0.07


1-158
B
B
1.7
0.07


1-159
S
B
1.7
0.07


1-160
S
B
1.7
0.07


1-161
S
B
1.7
0.07


1-162
S
B
1.7
0.07


1-163
S
B
1.7
0.07


1-164
S
B
1.7
0.07


1-165
S
B
1.7
0.07


1-166
S
B
1.7
0.07


1-167
S
B
1.7
0.07


1-168
A
B
1.7
0.07


1-169
A
B
1.7
0.07


1-170
A
B
1.7
0.07


1-171
B
B
1.7
0.07


1-172
B
B
1.7
0.07


1-173
D
B
1.7
0.07


1-174
D
B
1.7
0.07


1-175
D
B
1.7
0.07


1-176
D
B
1.7
0.07


1-177
D
B
1.7
0.07


1-178
D
B
1.7
0.07


1-179
C
B
1.7
0.07


1-180
C
B
1.7
0.07


1-181
C
B
1.7
0.07


1-182
C
B
1.7
0.07


1-183
B
B
1.7
0.07


1-184
B
B
1.7
0.07


1-185
B
B
1.7
0.07


1-186
S
B
1.7
0.07


1-187
S
B
1.7
0.07


1-188
S
B
1.7
0.07


1-189
S
B
1.7
0.07


1-190
S
B
1.7
0.07


1-191
S
B
1.7
0.07


1-192
S
B
1.7
0.07


1-193
S
B
1.7
0.07


1-194
S
B
1.7
0.07


1-195
S
B
1.7
0.07


1-196
A
B
1.7
0.07


1-197
A
B
1.7
0.07


1-198
A
B
1.7
0.07


1-199
B
B
1.7
0.07


1-200
B
B
1.7
0.07


1-201
E
B
1.7
0.07


1-202
D
C
1.7
0.07


1-203
D
C
1.7
0.07


1-204
D
C
1.7
0.07


1-205
D
C
1.7
0.07


1-206
D
C
1.7
0.07


1-207
D
C
1.7
0.07


1-208
C
C
1.7
0.07


1-209
C
C
1.7
0.07


1-210
C
C
1.7
0.07


1-211
C
C
1.7
0.07


1-212
C
C
1.7
0.07


1-213
B
C
1.7
0.07


1-214
B
C
1.7
0.07


1-215
B
C
1.7
0.07


1-216
S
C
1.7
0.07


1-217
S
C
1.7
0.07


1-218
S
C
1.7
0.07


1-219
S
C
1.7
0.07


1-220
S
C
1.7
0.07


1-221
S
C
1.7
0.07


1-222
S
C
1.7
0.07


1-223
S
C
1.7
0.07


1-224
S
C
1.7
0.07


1-225
S
C
1.7
0.07


1-226
S
C
1.7
0.07


1-227
S
C
1.7
0.07


1-228
A
C
1.7
0.07


1-229
A
C
1.7
0.07


1-230
A
C
1.7
0.07


1-231
B
C
1.7
0.07


1-232
B
C
1.7
0.07


1-233
D
C
1.7
0.07


1-234
D
C
1.7
0.07


1-235
D
C
1.7
0.07


1-236
D
C
1.7
0.07


1-237
D
C
1.7
0.07


1-238
D
C
1.7
0.07


1-239
C
C
1.7
0.07


1-240
C
C
1.7
0.07


1-241
C
C
1.7
0.07


1-242
C
C
1.7
0.07


1-243
C
C
1.7
0.07


1-244
C
C
1.7
0.07


1-245
B
C
1.7
0.07


1-246
B
C
1.7
0.07


1-247
B
C
1.7
0.07


1-248
S
C
1.7
0.07


1-249
S
C
1.7
0.07


1-250
S
C
1.7
0.07


1-251
S
C
1.7
0.07


1-252
S
C
1.7
0.07


1-253
S
C
1.7
0.07


1-254
S
C
1.7
0.07


1-255
S
C
1.7
0.07


1-256
S
C
1.7
0.07


1-257
S
C
1.7
0.07


1-258
S
C
1.7
0.07


1-259
S
C
1.7
0.07


1-260
A
C
1.7
0.07


1-261
A
C
1.7
0.07


1-262
A
C
1.7
0.07


1-263
A
C
1.7
0.07


1-264
B
C
1.7
0.07


1-265
B
C
1.7
0.07


1-266
D
C
1.7
0.07


1-267
D
C
1.7
0.07


1-268
D
C
1.7
0.07


1-269
D
C
1.7
0.07


1-270
D
C
1.7
0.07


1-271
C
C
1.7
0.07


1-272
C
C
1.7
0.07


1-273
C
C
1.7
0.07


1-274
C
C
1.7
0.07


1-275
C
C
1.7
0.07


1-276
C
C
1.7
0.07


1-277
C
C
1.7
0.07


1-278
B
C
1.7
0.07


1-279
B
C
1.7
0.07


1-280
B
C
1.7
0.07


1-281
S
C
1.7
0.07


1-282
S
C
1.7
0.07


1-283
S
C
1.7
0.07


1-284
S
C
1.7
0.07


1-285
S
C
1.7
0.07


1-286
S
C
1.7
0.07


1-287
S
C
1.7
0.07


1-288
S
C
1.7
0.07


1-289
S
C
1.7
0.07


1-290
S
C
1.7
0.07


1-291
S
C
1.7
0.07


1-292
S
C
1.7
0.07


1-293
S
C
1.7
0.07


1-294
A
C
1.7
0.07


1-295
A
C
1.7
0.07


1-296
A
C
1.7
0.07


1-297
A
C
1.7
0.07


1-298
B
C
1.7
0.07


1-299
B
C
1.7
0.07


1-300
D
C
1.7
0.07


1-301
D
C
1.7
0.07


1-302
D
C
1.7
0.07


1-303
D
C
1.7
0.07


1-304
D
C
1.7
0.07


1-305
D
C
1.7
0.07


1-306
C
C
1.7
0.07


1-307
C
C
1.7
0.07


1-308
C
C
1.7
0.07


1-309
C
C
1.7
0.07


1-310
C
C
1.7
0.07


1-311
C
C
1.7
0.07


1-312
C
C
1.7
0.07


1-313
C
C
1.7
0.07


1-314
B
C
1.7
0.07


1-315
B
C
1.7
0.07


1-316
B
C
1.7
0.07


1-317
S
C
1.7
0.07


1-318
S
C
1.7
0.07


1-319
S
C
1.7
0.07


1-320
S
C
1.7
0.07


1-321
S
C
1.7
0.07


1-322
S
C
1.7
0.07


1-323
S
C
1.7
0.07


1-324
S
C
1.7
0.07


1-325
S
C
1.7
0.07


1-326
S
C
1.7
0.07


1-327
S
C
1.7
0.07


1-328
S
C
1.7
0.07


1-329
S
C
1.7
0.07


1-330
S
C
1.7
0.07


1-331
S
C
1.7
0.07


1-332
A
C
1.7
0.07


1-333
A
C
1.7
0.07


1-334
A
C
1.7
0.07


1-335
A
C
1.7
0.07


1-336
A
C
1.7
0.07


1-337
B
C
1.7
0.07


1-338
B
C
1.7
0.07


1-339
B
C
1.7
0.07


Com. Ex. 1-1
C
D
1.7
0.07


Com. Ex. 1-2
C
D
1.7
0.07


Com. Ex. 1-3
B
D
1.7
0.07


Com. Ex. 1-4
C
D
1.7
0.07


Com. Ex. 1-5
E
D
1.7
0.07


Com. Ex. 1-6
G
S
1.7
0.07


Com. Ex. 1-7
G
S
1.7
0.07


Com. Ex. 1-8
G
S
1.7
0.07


Com. Ex. 1-9
G
S
1.7
0.07




















TABLE 12






Bubbles
Unmelted
Acid etching
Alkaline etching


No.
rank
rank
rate (nm/min)
rate (nm/min)







2-1
E
S
1.7
0.07


2-2
E
S
1.7
0.07


2-3
B
S
1.7
0.07


2-4
B
S
1.7
0.07


2-5
C
S
1.7
0.07


2-6
E
S
1.7
0.07


2-7
E
S
1.7
0.07


2-8
E
S
1.7
0.07


2-9
E
S
1.7
0.07


2-10
D
S
1.7
0.07


2-11
B
S
1.7
0.07


2-12
B
S
1.7
0.07


2-13
B
S
1.7
0.07


2-14
B
S
1.7
0.07


2-15
C
S
1.7
0.07


2-16
C
S
1.7
0.07


2-17
D
S
1.7
0.07


2-18
D
S
1.7
0.07


2-19
D
S
1.7
0.07


2-20
D
S
1.7
0.07


2-21
C
S
1.7
0.07


2-22
A
S
1.7
0.07


2-23
A
S
1.7
0.07


2-24
A
S
1.7
0.07


2-25
A
S
1.7
0.07


2-26
B
S
1.7
0.07


2-27
B
S
1.7
0.07


2-28
D
S
1.7
0.07


2-29
D
S
1.7
0.07


2-30
D
S
1.7
0.07


2-31
D
S
1.7
0.07


2-32
D
S
1.7
0.07


2-33
D
S
1.7
0.07


2-34
C
S
1.7
0.07


2-35
C
S
1.7
0.07


2-36
A
S
1.7
0.07


2-37
A
S
1.7
0.07


2-38
S
S
1.7
0.07


2-39
S
S
1.7
0.07


2-40
S
S
1.7
0.07


2-41
A
S
1.7
0.07


2-42
A
S
1.7
0.07


2-43
B
S
1.7
0.07


2-44
B
S
1.7
0.07


2-45
D
S
1.7
0.07


2-46
D
S
1.7
0.07


2-47
D
S
1.7
0.07


2-48
D
S
1.7
0.07


2-49
D
S
1.7
0.07


2-50
D
S
1.7
0.07


2-51
A
S
1.7
0.07


2-52
S
S
1.7
0.07


2-53
S
S
1.7
0.07


2-54
S
S
1.7
0.07


2-55
S
S
1.7
0.07


2-56
A
S
1.7
0.07


2-57
A
S
1.7
0.07


2-58
B
S
1.7
0.07


2-59
B
S
1.7
0.07


2-60
D
S
1.7
0.07


2-61
D
S
1.7
0.07


2-62
D
S
1.7
0.07


2-63
D
S
1.7
0.07


2-64
D
S
1.7
0.07


2-65
D
S
1.7
0.07


2-66
D
S
1.7
0.07


2-67
D
S
1.7
0.07


2-68
C
S
1.7
0.07


2-69
B
S
1.7
0.07


2-70
S
S
1.7
0.07


2-71
S
S
1.7
0.07


2-72
S
S
1.7
0.07


2-73
S
S
1.7
0.07


2-74
S
S
1.7
0.07


2-75
A
A
1.7
0.07


2-76
B
A
1.7
0.07


2-77
B
A
1.7
0.07


2-78
D
S
1.7
0.07


2-79
D
S
1.7
0.07


2-80
D
S
1.7
0.07


2-81
D
S
1.7
0.07


2-82
D
S
1.7
0.07


2-83
D
S
1.7
0.07


2-84
D
S
1.7
0.07


2-85
C
S
1.7
0.07


2-86
B
S
1.7
0.07


2-87
S
S
1.7
0.07


2-88
S
S
1.7
0.07


2-89
S
S
1.7
0.07


2-90
S
S
1.7
0.07


2-91
S
S
1.7
0.07


2-92
S
A
1.7
0.07


2-93
S
A
1.7
0.07


2-94
A
A
1.7
0.07


2-95
A
A
1.7
0.07


2-96
B
A
1.7
0.07


2-97
B
A
1.7
0.07


2-98
B
A
1.7
0.07


2-99
B
A
1.7
0.07


2-100
D
B
1.7
0.07


2-101
D
B
1.7
0.07


2-102
D
B
1.7
0.07


2-103
D
B
1.7
0.07


2-104
D
B
1.7
0.07


2-105
D
B
1.7
0.07


2-106
D
B
1.7
0.07


2-107
C
B
1.7
0.07


2-108
B
B
1.7
0.07


2-109
B
B
1.7
0.07


2-110
S
B
1.7
0.07


2-111
S
B
1.7
0.07


2-112
S
B
1.7
0.07


2-113
S
B
1.7
0.07


2-114
S
B
1.7
0.07


2-115
S
B
1.7
0.07


2-116
S
B
1.7
0.07


2-117
S
B
1.7
0.07


2-118
S
B
1.7
0.07


2-119
A
B
1.7
0.07


2-120
A
B
1.7
0.07


2-121
B
B
1.7
0.07


2-122
B
B
1.7
0.07


2-123
D
B
1.7
0.07


2-124
D
B
1.7
0.07


2-125
D
B
1.7
0.07


2-126
D
B
1.7
0.07


2-127
D
B
1.7
0.07


2-128
D
B
1.7
0.07


2-129
D
B
1.7
0.07


2-130
C
B
1.7
0.07


2-131
C
B
1.7
0.07


2-132
B
B
1.7
0.07


2-133
B
B
1.7
0.07


2-134
S
B
1.7
0.07


2-135
S
B
1.7
0.07


2-136
S
B
1.7
0.07


2-137
S
B
1.7
0.07


2-138
S
B
1.7
0.07


2-139
S
B
1.7
0.07


2-140
S
B
1.7
0.07


2-141
S
B
1.7
0.07


2-142
S
B
1.7
0.07


2-143
A
B
1.7
0.07


2-144
A
B
1.7
0.07


2-145
B
B
1.7
0.07


2-146
B
B
1.7
0.07


2-147
B
B
1.7
0.07


2-148
D
B
1.7
0.07


2-149
D
B
1.7
0.07


2-150
D
B
1.7
0.07


2-151
D
B
1.7
0.07


2-152
D
B
1.7
0.07


2-153
C
B
1.7
0.07


2-154
C
B
1.7
0.07


2-155
C
B
1.7
0.07


2-156
C
B
1.7
0.07


2-157
B
B
1.7
0.07


2-158
B
B
1.7
0.07


2-159
S
B
1.7
0.07


2-160
S
B
1.7
0.07


2-161
S
B
1.7
0.07


2-162
S
B
1.7
0.07


2-163
S
B
1.7
0.07


2-164
S
B
1.7
0.07


2-165
S
B
1.7
0.07


2-166
S
B
1.7
0.07


2-167
S
B
1.7
0.07


2-168
A
B
1.7
0.07


2-169
A
B
1.7
0.07


2-170
A
B
1.7
0.07


2-171
B
B
1.7
0.07


2-172
B
B
1.7
0.07


2-173
D
B
1.7
0.07


2-174
D
B
1.7
0.07


2-175
D
B
1.7
0.07


2-176
D
B
1.7
0.07


2-177
D
B
1.7
0.07


2-178
D
B
1.7
0.07


2-179
C
B
1.7
0.07


2-180
C
B
1.7
0.07


2-181
C
B
1.7
0.07


2-182
C
B
1.7
0.07


2-183
B
B
1.7
0.07


2-184
B
B
1.7
0.07


2-185
B
B
1.7
0.07


2-186
S
B
1.7
0.07


2-187
S
B
1.7
0.07


2-188
S
B
1.7
0.07


2-189
S
B
1.7
0.07


2-190
S
B
1.7
0.07


2-191
S
B
1.7
0.07


2-192
S
B
1.7
0.07


2-193
S
B
1.7
0.07


2-194
S
B
1.7
0.07


2-195
S
B
1.7
0.07


2-196
A
B
1.7
0.07


2-197
A
B
1.7
0.07


2-198
A
B
1.7
0.07


2-199
B
B
1.7
0.07


2-200
B
B
1.7
0.07


2-201
E
B
1.7
0.07


2-202
D
C
1.7
0.07


2-203
D
C
1.7
0.07


2-204
D
C
1.7
0.07


2-205
D
C
1.7
0.07


2-206
D
C
1.7
0.07


2-207
D
C
1.7
0.07


2-208
C
C
1.7
0.07


2-209
C
C
1.7
0.07


2-210
C
C
1.7
0.07


2-211
C
C
1.7
0.07


2-212
C
C
1.7
0.07


2-213
B
C
1.7
0.07


2-214
B
C
1.7
0.07


2-215
B
C
1.7
0.07


2-216
S
C
1.7
0.07


2-217
S
C
1.7
0.07


2-218
S
C
1.7
0.07


2-219
S
C
1.7
0.07


2-220
S
C
1.7
0.07


2-221
S
C
1.7
0.07


2-222
S
C
1.7
0.07


2-223
S
C
1.7
0.07


2-224
S
C
1.7
0.07


2-225
S
C
1.7
0.07


2-226
S
C
1.7
0.07


2-227
S
C
1.7
0.07


2-228
A
C
1.7
0.07


2-229
A
C
1.7
0.07


2-230
A
C
1.7
0.07


2-231
B
C
1.7
0.07


2-232
B
C
1.7
0.07


2-233
D
C
1.7
0.07


2-234
D
C
1.7
0.07


2-235
D
C
1.7
0.07


2-236
D
C
1.7
0.07


2-237
D
C
1.7
0.07


2-238
D
C
1.7
0.07


2-239
C
C
1.7
0.07


2-240
C
C
1.7
0.07


2-241
C
C
1.7
0.07


2-242
C
C
1.7
0.07


2-243
C
C
1.7
0.07


2-244
C
C
1.7
0.07


2-245
B
C
1.7
0.07


2-246
B
C
1.7
0.07


2-247
B
C
1.7
0.07


2-248
S
C
1.7
0.07


2-249
S
C
1.7
0.07


2-250
S
C
1.7
0.07


2-251
S
C
1.7
0.07


2-252
S
C
1.7
0.07


2-253
S
C
1.7
0.07


2-254
S
C
1.7
0.07


2-255
S
C
1.7
0.07


2-256
S
C
1.7
0.07


2-257
S
C
1.7
0.07


2-258
S
C
1.7
0.07


2-259
S
C
1.7
0.07


2-260
A
C
1.7
0.07


2-261
A
C
1.7
0.07


2-262
A
C
1.7
0.07


2-263
A
C
1.7
0.07


2-264
B
C
1.7
0.07


2-265
B
C
1.7
0.07


2-266
D
C
1.7
0.07


2-267
D
C
1.7
0.07


2-268
D
C
1.7
0.07


2-269
D
C
1.7
0.07


2-270
D
C
1.7
0.07


2-271
C
C
1.7
0.07


2-272
C
C
1.7
0.07


2-273
C
C
1.7
0.07


2-274
C
C
1.7
0.07


2-275
C
C
1.7
0.07


2-276
C
C
1.7
0.07


2-277
C
C
1.7
0.07


2-278
B
C
1.7
0.07


2-279
B
C
1.7
0.07


2-280
B
C
1.7
0.07


2-281
S
C
1.7
0.07


2-282
S
C
1.7
0.07


2-283
S
C
1.7
0.07


2-284
S
C
1.7
0.07


2-285
S
C
1.7
0.07


2-286
S
C
1.7
0.07


2-287
S
C
1.7
0.07


2-288
S
C
1.7
0.07


2-289
S
C
1.7
0.07


2-290
S
C
1.7
0.07


2-291
S
C
1.7
0.07


2-292
S
C
1.7
0.07


2-293
S
C
1.7
0.07


2-294
A
C
1.7
0.07


2-295
A
C
1.7
0.07


2-296
A
C
1.7
0.07


2-297
A
C
1.7
0.07


2-298
B
C
1.7
0.07


2-299
B
C
1.7
0.07


2-300
D
C
1.7
0.07


2-301
D
C
1.7
0.07


2-302
D
C
1.7
0.07


2-303
D
C
1.7
0.07


2-304
D
C
1.7
0.07


2-305
D
C
1.7
0.07


2-306
C
C
1.7
0.07


2-307
C
C
1.7
0.07


2-308
C
C
1.7
0.07


2-309
C
C
1.7
0.07


2-310
C
C
1.7
0.07


2-311
C
C
1.7
0.07


2-312
C
C
1.7
0.07


2-313
C
C
1.7
0.07


2-314
B
C
1.7
0.07


2-315
B
C
1.7
0.07


2-316
B
C
1.7
0.07


2-317
S
C
1.7
0.07


2-318
S
C
1.7
0.07


2-319
S
C
1.7
0.07


2-320
S
C
1.7
0.07


2-321
S
C
1.7
0.07


2-322
S
C
1.7
0.07


2-323
S
C
1.7
0.07


2-324
S
C
1.7
0.07


2-325
S
C
1.7
0.07


2-326
S
C
1.7
0.07


2-327
S
C
1.7
0.07


2-328
S
C
1.7
0.07


2-329
S
C
1.7
0.07


2-330
S
C
1.7
0.07


2-331
S
C
1.7
0.07


2-332
A
C
1.7
0.07


2-333
A
C
1.7
0.07


2-334
A
C
1.7
0.07


2-335
A
C
1.7
0.07


2-336
A
C
1.7
0.07


2-337
B
C
1.7
0.07


2-338
B
C
1.7
0.07


2-339
B
C
1.7
0.07


Com. Ex. 2-1
C
D
1.7
0.07


Com. Ex. 2-2
C
D
1.7
0.07


Com. Ex. 2-3
B
D
1.7
0.07


Com. Ex. 2-4
C
D
1.7
0.07


Com. Ex. 2-5
E
D
1.7
0.07


Com. Ex. 2-6
G
S
1.7
0.07


Com. Ex. 2-7
G
S
1.7
0.07


Com. Ex. 2-8
G
S
1.7
0.07


Com. Ex. 2-9
G
S
1.7
0.07




















TABLE 13







No.
Bubbles rank
Unmelted rank









3-1
E
S



3-2
E
S



3-3
B
S



3-4
B
S



3-5
C
S



3-6
E
S



3-7
E
S



3-8
E
S



3-9
E
S



3-10
D
S



3-11
B
S



3-12
B
S



3-13
B
S



3-14
B
S



3-15
C
S



3-16
C
S



3-17
D
S



3-18
D
S



3-19
D
S



3-20
D
S



3-21
C
S



3-22
A
S



3-23
A
S



3-24
A
S



3-25
A
S



3-26
B
S



3-27
B
S



3-28
D
S



3-29
D
S



3-30
D
S



3-31
D
S



3-32
D
S



3-33
D
S



3-34
C
S



3-35
C
S



3-36
A
S



3-37
A
S



3-38
S
S



3-39
S
S



3-40
S
S



3-41
A
S



3-42
A
S



3-43
B
S



3-44
B
S



3-45
D
S



3-46
D
S



3-47
D
S



3-48
D
S



3-49
D
S



3-50
D
S



3-51
A
S



3-52
S
S



3-53
S
S



3-54
S
S



3-55
S
S



3-56
A
S



3-57
A
S



3-58
B
S



3-59
B
S



3-60
D
S



3-61
D
S



3-62
D
S



3-63
D
S



3-64
D
S



3-65
D
S



3-66
D
S



3-67
D
S



3-68
C
S



3-69
B
S



3-70
S
S



3-71
S
S



3-72
S
S



3-73
S
S



3-74
S
S



3-75
A
A



3-76
B
A



3-77
B
A



3-78
D
S



3-79
D
S



3-80
D
S



3-81
D
S



3-82
D
S



3-83
D
S



3-84
D
S



3-85
C
S



3-86
B
S



3-87
S
S



3-88
S
S



3-89
S
S



3-90
S
S



3-91
S
S



3-92
S
A



3-93
S
A



3-94
A
A



3-95
A
A



3-96
B
A



3-97
B
A



3-98
B
A



3-99
B
A



3-100
D
B



3-101
D
B



3-102
D
B



3-103
D
B



3-104
D
B



3-105
D
B



3-106
D
B



3-107
C
B



3-108
B
B



3-109
B
B



3-110
S
B



3-111
S
B



3-112
S
B



3-113
S
B



3-114
S
B



3-115
S
B



3-116
S
B



3-117
S
B



3-118
S
B



3-119
A
B



3-120
A
B



3-121
B
B



3-122
B
B



3-123
D
B



3-124
D
B



3-125
D
B



3-126
D
B



3-127
D
B



3-128
D
B



3-129
D
B



3-130
C
B



3-131
C
B



3-132
B
B



3-133
B
B



3-134
S
B



3-135
S
B



3-136
S
B



3-137
S
B



3-138
S
B



3-139
S
B



3-140
S
B



3-141
S
B



3-142
S
B



3-143
A
B



3-144
A
B



3-145
B
B



3-146
B
B



3-147
B
B



3-148
D
B



3-149
D
B



3-150
D
B



3-151
D
B



3-152
D
B



3-153
C
B



3-154
C
B



3-155
C
B



3-156
C
B



3-157
B
B



3-158
B
B



3-159
S
B



3-160
S
B



3-161
S
B



3-162
S
B



3-163
S
B



3-164
S
B



3-165
S
B



3-166
S
B



3-167
S
B



3-168
A
B



3-169
A
B



3-170
A
B



3-171
B
B



3-172
B
B



3-173
D
B



3-174
D
B



3-175
D
B



3-176
D
B



3-177
D
B



3-178
D
B



3-179
C
B



3-180
C
B



3-181
C
B



3-182
C
B



3-183
B
B



3-184
B
B



3-185
B
B



3-186
S
B



3-187
S
B



3-188
S
B



3-189
S
B



3-190
S
B



3-191
S
B



3-192
S
B



3-193
S
B



3-194
S
B



3-195
S
B



3-196
A
B



3-197
A
B



3-198
A
B



3-199
B
B



3-200
B
B



3-201
E
B



3-202
D
C



3-203
D
C



3-204
D
C



3-205
D
C



3-206
D
C



3-207
D
C



3-208
C
C



3-209
C
C



3-210
C
C



3-211
C
C



3-212
C
C



3-213
B
C



3-214
B
C



3-215
B
C



3-216
S
C



3-217
S
C



3-218
S
C



3-219
S
C



3-220
S
C



3-221
S
C



3-222
S
C



3-223
S
C



3-224
S
C



3-225
S
C



3-226
S
C



3-227
S
C



3-228
A
C



3-229
A
C



3-230
A
C



3-231
B
C



3-232
B
C



3-233
D
C



3-234
D
C



3-235
D
C



3-236
D
C



3-237
D
C



3-238
D
C



3-239
C
C



3-240
C
C



3-241
C
C



3-242
C
C



3-243
C
C



3-244
C
C



3-245
B
C



3-246
B
C



3-247
B
C



3-248
S
C



3-249
S
C



3-250
S
C



3-251
S
C



3-252
S
C



3-253
S
C



3-254
S
C



3-255
S
C



3-256
S
C



3-257
S
C



3-258
S
C



3-259
S
C



3-260
A
C



3-261
A
C



3-262
A
C



3-263
A
C



3-264
B
C



3-265
B
C



3-266
D
C



3-267
D
C



3-268
D
C



3-269
D
C



3-270
D
C



3-271
C
C



3-272
C
C



3-273
C
C



3-274
C
C



3-275
C
C



3-276
C
C



3-277
C
C



3-278
B
C



3-279
B
C



3-280
B
C



3-281
S
C



3-282
S
C



3-283
S
C



3-284
S
C



3-285
S
C



3-286
S
C



3-287
S
C



3-288
S
C



3-289
S
C



3-290
S
C



3-291
S
C



3-292
S
C



3-293
S
C



3-294
A
C



3-295
A
C



3-296
A
C



3-297
A
C



3-298
B
C



3-299
B
C



3-300
D
C



3-301
D
C



3-302
D
C



3-303
D
C



3-304
D
C



3-305
D
C



3-306
C
C



3-307
C
C



3-308
C
C



3-309
C
C



3-310
C
C



3-311
C
C



3-312
C
C



3-313
C
C



3-314
B
C



3-315
B
C



3-316
B
C



3-317
S
C



3-318
S
C



3-319
S
C



3-320
S
C



3-321
S
C



3-322
S
C



3-323
S
C



3-324
S
C



3-325
S
C



3-326
S
C



3-327
S
C



3-328
S
C



3-329
S
C



3-330
S
C



3-331
S
C



3-332
A
C



3-333
A
C



3-334
A
C



3-335
A
C



3-336
A
C



3-337
B
C



3-338
B
C



3-339
B
C



Com. Ex. 3-1
C
D



Com. Ex. 3-2
C
D



Com. Ex. 3-3
B
D



Com. Ex. 3-4
C
D



Com. Ex. 3-5
E
D



Com. Ex. 3-6
G
S



Com. Ex. 3-7
G
S



Com. Ex. 3-8
G
S



Com. Ex. 3-9
G
S





















TABLE 14







No.
Bubbles rank
Unmelted rank









4-1
E
S



4-2
E
S



4-3
B
S



4-4
B
S



4-5
C
S



4-6
E
S



4-7
E
S



4-8
E
S



4-9
E
S



4-10
D
S



4-11
B
S



4-12
B
S



4-13
B
S



4-14
B
S



4-15
C
S



4-16
C
S



4-17
D
S



4-18
D
S



4-19
D
S



4-20
D
S



4-21
C
S



4-22
A
S



4-23
A
S



4-24
A
S



4-25
A
S



4-26
B
S



4-27
B
S



4-28
D
S



4-29
D
S



4-30
D
S



4-31
D
S



4-32
D
S



4-33
D
S



4-34
C
S



4-35
C
S



4-36
A
S



4-37
A
S



4-38
S
S



4-39
S
S



4-40
S
S



4-41
A
S



4-42
A
S



4-43
B
S



4-44
B
S



4-45
D
S



4-46
D
S



4-47
D
S



4-48
D
S



4-49
D
S



4-50
D
S



4-51
A
S



4-52
S
S



4-53
S
S



4-54
S
S



4-55
S
S



4-56
A
S



4-57
A
S



4-58
B
S



4-59
B
S



4-60
D
S



4-61
D
S



4-62
D
S



4-63
D
S



4-64
D
S



4-65
D
S



4-66
D
S



4-67
D
S



4-68
C
S



4-69
B
S



4-70
S
S



4-71
S
S



4-72
S
S



4-73
S
S



4-74
S
S



4-75
A
A



4-76
B
A



4-77
B
A



4-78
D
S



4-79
D
S



4-80
D
S



4-81
D
S



4-82
D
S



4-83
D
S



4-84
D
S



4-85
C
S



4-86
B
S



4-87
S
S



4-88
S
S



4-89
S
S



4-90
S
S



4-91
S
S



4-92
S
A



4-93
S
A



4-94
A
A



4-95
A
A



4-96
B
A



4-97
B
A



4-98
B
A



4-99
B
A



4-100
D
B



4-101
D
B



4-102
D
B



4-103
D
B



4-104
D
B



4-105
D
B



4-106
D
B



4-107
C
B



4-108
B
B



4-109
B
B



4-110
S
B



4-111
S
B



4-112
S
B



4-113
S
B



4-114
S
B



4-115
S
B



4-116
S
B



4-117
S
B



4-118
S
B



4-119
A
B



4-120
A
B



4-121
B
B



4-122
B
B



4-123
D
B



4-124
D
B



4-125
D
B



4-126
D
B



4-127
D
B



4-128
D
B



4-129
D
B



4-130
C
B



4-131
C
B



4-132
B
B



4-133
B
B



4-134
S
B



4-135
S
B



4-136
S
B



4-137
S
B



4-138
S
B



4-139
S
B



4-140
S
B



4-141
S
B



4-142
S
B



4-143
A
B



4-144
A
B



4-145
B
B



4-146
B
B



4-147
B
B



4-148
D
B



4-149
D
B



4-150
D
B



4-151
D
B



4-152
D
B



4-153
C
B



4-154
C
B



4-155
C
B



4-156
C
B



4-157
B
B



4-158
B
B



4-159
S
B



4-160
S
B



4-161
S
B



4-162
S
B



4-163
S
B



4-164
S
B



4-165
S
B



4-166
S
B



4-167
S
B



4-168
A
B



4-169
A
B



4-170
A
B



4-171
B
B



4-172
B
B



4-173
D
B



4-174
D
B



4-175
D
B



4-176
D
B



4-177
D
B



4-178
D
B



4-179
C
B



4-180
C
B



4-181
C
B



4-182
C
B



4-183
B
B



4-184
B
B



4-185
B
B



4-186
S
B



4-187
S
B



4-188
S
B



4-189
S
B



4-190
S
B



4-191
S
B



4-192
S
B



4-193
S
B



4-194
S
B



4-195
S
B



4-196
A
B



4-197
A
B



4-198
A
B



4-199
B
B



4-200
B
B



4-201
E
B



4-202
D
C



4-203
D
C



4-204
D
C



4-205
D
C



4-206
D
C



4-207
D
C



4-208
C
C



4-209
C
C



4-210
C
C



4-211
C
C



4-212
C
C



4-213
B
C



4-214
B
C



4-215
B
C



4-216
S
C



4-217
S
C



4-218
S
C



4-219
S
C



4-220
S
C



4-221
S
C



4-222
S
C



4-223
S
C



4-224
S
C



4-225
S
C



4-226
S
C



4-227
S
C



4-228
A
C



4-229
A
C



4-230
A
C



4-231
B
C



4-232
B
C



4-233
D
C



4-234
D
C



4-235
D
C



4-236
D
C



4-237
D
C



4-238
D
C



4-239
C
C



4-240
C
C



4-241
C
C



4-242
C
C



4-243
C
C



4-244
C
C



4-245
B
C



4-246
B
C



4-247
B
C



4-248
S
C



4-249
S
C



4-250
S
C



4-251
S
C



4-252
S
C



4-253
S
C



4-254
S
C



4-255
S
C



4-256
S
C



4-257
S
C



4-258
S
C



4-259
S
C



4-260
A
C



4-261
A
C



4-262
A
C



4-263
A
C



4-264
B
C



4-265
B
C



4-266
D
C



4-267
D
C



4-268
D
C



4-269
D
C



4-270
D
C



4-271
C
C



4-272
C
C



4-273
C
C



4-274
C
C



4-275
C
C



4-276
C
C



4-277
C
C



4-278
B
C



4-279
B
C



4-280
B
C



4-281
S
C



4-282
S
C



4-283
S
C



4-284
S
C



4-285
S
C



4-286
S
C



4-287
S
C



4-288
S
C



4-289
S
C



4-290
S
C



4-291
S
C



4-292
S
C



4-293
S
C



4-294
A
C



4-295
A
C



4-296
A
C



4-297
A
C



4-298
B
C



4-299
B
C



4-300
D
C



4-301
D
C



4-302
D
C



4-303
D
C



4-304
D
C



4-305
D
C



4-306
C
C



4-307
C
C



4-308
C
C



4-309
C
C



4-310
C
C



4-311
C
C



4-312
C
C



4-313
C
C



4-314
B
C



4-315
B
C



4-316
B
C



4-317
S
C



4-318
S
C



4-319
S
C



4-320
S
C



4-321
S
C



4-322
S
C



4-323
S
C



4-324
S
C



4-325
S
C



4-326
S
C



4-327
S
C



4-328
S
C



4-329
S
C



4-330
S
C



4-331
S
C



4-332
A
C



4-333
A
C



4-334
A
C



4-335
A
C



4-336
A
C



4-337
B
C



4-338
B
C



4-339
B
C



Com. Ex. 4-1
C
D



Com. Ex. 4-2
C
D



Com. Ex. 4-3
B
D



Com. Ex. 4-4
C
D



Com. Ex. 4-5
E
D



Com. Ex. 4-6
G
S



Com. Ex. 4-7
G
S



Com. Ex. 4-8
G
S



Com. Ex. 4-9
G
S





















TABLE 15







No.
Bubbles rank
Unmelted rank









5-1
E
S



5-2
E
S



5-3
B
S



5-4
B
S



5-5
C
S



5-6
E
S



5-7
E
S



5-8
E
S



5-9
E
S



5-10
D
S



5-11
B
S



5-12
B
S



5-13
B
S



5-14
B
S



5-15
C
S



5-16
C
S



5-17
D
S



5-18
D
S



5-19
D
S



5-20
D
S



5-21
C
S



5-22
A
S



5-23
A
S



5-24
A
S



5-25
A
S



5-26
B
S



5-27
B
S



5-28
D
S



5-29
D
S



5-30
D
S



5-31
D
S



5-32
D
S



5-33
D
S



5-34
C
S



5-35
C
S



5-36
A
S



5-37
A
S



5-38
S
S



5-39
S
S



5-40
S
S



5-41
A
S



5-42
A
S



5-43
B
S



5-44
B
S



5-45
D
S



5-46
D
S



5-47
D
S



5-48
D
S



5-49
D
S



5-50
D
S



5-51
A
S



5-52
S
S



5-53
S
S



5-54
S
S



5-55
S
S



5-56
A
S



5-57
A
S



5-58
B
S



5-59
B
S



5-60
D
S



5-61
D
S



5-62
D
S



5-63
D
S



5-64
D
S



5-65
D
S



5-66
D
S



5-67
D
S



5-68
C
S



5-69
B
S



5-70
S
S



5-71
S
S



5-72
S
S



5-73
S
S



5-74
S
S



5-75
A
A



5-76
B
A



5-77
B
A



5-78
D
S



5-79
D
S



5-80
D
S



5-81
D
S



5-82
D
S



5-83
D
S



5-84
D
S



5-85
C
S



5-86
B
S



5-87
S
S



5-88
S
S



5-89
S
S



5-90
S
S



5-91
S
S



5-92
S
A



5-93
S
A



5-94
A
A



5-95
A
A



5-96
B
A



5-97
B
A



5-98
B
A



5-99
B
A



5-100
D
B



5-101
D
B



5-102
D
B



5-103
D
B



5-104
D
B



5-105
D
B



5-106
D
B



5-107
C
B



5-108
B
B



5-109
B
B



5-110
S
B



5-111
S
B



5-112
S
B



5-113
S
B



5-114
S
B



5-115
S
B



5-116
S
B



5-117
S
B



5-118
S
B



5-119
A
B



5-120
A
B



5-121
B
B



5-122
B
B



5-123
D
B



5-124
D
B



5-125
D
B



5-126
D
B



5-127
D
B



5-128
D
B



5-129
D
B



5-130
C
B



5-131
C
B



5-132
B
B



5-133
B
B



5-134
S
B



5-135
S
B



5-136
S
B



5-137
S
B



5-138
S
B



5-139
S
B



5-140
S
B



5-141
S
B



5-142
S
B



5-143
A
B



5-144
A
B



5-145
B
B



5-146
B
B



5-147
B
B



5-148
D
B



5-149
D
B



5-150
D
B



5-151
D
B



5-152
D
B



5-153
C
B



5-154
C
B



5-155
C
B



5-156
C
B



5-157
B
B



5-158
B
B



5-159
S
B



5-160
S
B



5-161
S
B



5-162
S
B



5-163
S
B



5-164
S
B



5-165
S
B



5-166
S
B



5-167
S
B



5-168
A
B



5-169
A
B



5-170
A
B



5-171
B
B



5-172
B
B



5-173
D
B



5-174
D
B



5-175
D
B



5-176
D
B



5-177
D
B



5-178
D
B



5-179
C
B



5-180
C
B



5-181
C
B



5-182
C
B



5-183
B
B



5-184
B
B



5-185
B
B



5-186
S
B



5-187
S
B



5-188
S
B



5-189
S
B



5-190
S
B



5-191
S
B



5-192
S
B



5-193
S
B



5-194
S
B



5-195
S
B



5-196
A
B



5-197
A
B



5-198
A
B



5-199
B
B



5-200
B
B



5-201
E
B



5-202
D
C



5-203
D
C



5-204
D
C



5-205
D
C



5-206
D
C



5-207
D
C



5-208
C
C



5-209
C
C



5-210
C
C



5-211
C
C



5-212
C
C



5-213
B
C



5-214
B
C



5-215
B
C



5-216
S
C



5-217
S
C



5-218
S
C



5-219
S
C



5-220
S
C



5-221
S
C



5-222
S
C



5-223
S
C



5-224
S
C



5-225
S
C



5-226
S
C



5-227
S
C



5-228
A
C



5-229
A
C



5-230
A
C



5-231
B
C



5-232
B
C



5-233
D
C



5-234
D
C



5-235
D
C



5-236
D
C



5-237
D
C



5-238
D
C



5-239
C
C



5-240
C
C



5-241
C
C



5-242
C
C



5-243
C
C



5-244
C
C



5-245
B
C



5-246
B
C



5-247
B
C



5-248
S
C



5-249
S
C



5-250
S
C



5-251
S
C



5-252
S
C



5-253
S
C



5-254
S
C



5-255
S
C



5-256
S
C



5-257
S
C



5-258
S
C



5-259
S
C



5-260
A
C



5-261
A
C



5-262
A
C



5-263
A
C



5-264
B
C



5-265
B
C



5-266
D
C



5-267
D
C



5-268
D
C



5-269
D
C



5-270
D
C



5-271
C
C



5-272
C
C



5-273
C
C



5-274
C
C



5-275
C
C



5-276
C
C



5-277
C
C



5-278
B
C



5-279
B
C



5-280
B
C



5-281
S
C



5-282
S
C



5-283
S
C



5-284
S
C



5-285
S
C



5-286
S
C



5-287
S
C



5-288
S
C



5-289
S
C



5-290
S
C



5-291
S
C



5-292
S
C



5-293
S
C



5-294
A
C



5-295
A
C



5-296
A
C



5-297
A
C



5-298
B
C



5-299
B
C



5-300
D
C



5-301
D
C



5-302
D
C



5-303
D
C



5-304
D
C



5-305
D
C



5-306
C
C



5-307
C
C



5-308
C
C



5-309
C
C



5-310
C
C



5-311
C
C



5-312
C
C



5-313
C
C



5-314
B
C



5-315
B
C



5-316
B
C



5-317
S
C



5-318
S
C



5-319
S
C



5-320
S
C



5-321
S
C



5-322
S
C



5-323
S
C



5-324
S
C



5-325
S
C



5-326
S
C



5-327
S
C



5-328
S
C



5-329
S
C



5-330
S
C



5-331
S
C



5-332
A
C



5-333
A
C



5-334
A
C



5-335
A
C



5-336
A
C



5-337
B
C



5-338
B
C



5-339
B
C



Com. Ex. 5-1
C
D



Com. Ex. 5-2
C
D



Com. Ex. 5-3
B
D



Com. Ex. 5-4
C
D



Com. Ex. 5-5
E
D



Com. Ex. 5-6
G
S



Com. Ex. 5-7
G
S



Com. Ex. 5-8
G
S



Com. Ex. 5-9
G
S





















TABLE 16







No.
Bubbles rank
Unmelted rank









6-1
E
S



6-2
E
S



6-3
B
S



6-4
B
S



6-5
C
S



6-6
E
S



6-7
E
S



6-8
E
S



6-9
E
S



6-10
D
S



6-11
B
S



6-12
B
S



6-13
B
S



6-14
B
S



6-15
C
S



6-16
C
S



6-17
D
S



6-18
D
S



6-19
D
S



6-20
D
S



6-21
C
S



6-22
A
S



6-23
A
S



6-24
A
S



6-25
A
S



6-26
B
S



6-27
B
S



6-28
D
S



6-29
D
S



6-30
D
S



6-31
D
S



6-32
D
S



6-33
D
S



6-34
C
S



6-35
C
S



6-36
A
S



6-37
A
S



6-38
S
S



6-39
S
S



6-40
S
S



6-41
A
S



6-42
A
S



6-43
B
S



6-44
B
S



6-45
D
S



6-46
D
S



6-47
D
S



6-48
D
S



6-49
D
S



6-50
D
S



6-51
A
S



6-52
S
S



6-53
S
S



6-54
S
S



6-55
S
S



6-56
A
S



6-57
A
S



6-58
B
S



6-59
B
S



6-60
D
S



6-61
D
S



6-62
D
S



6-63
D
S



6-64
D
S



6-65
D
S



6-66
D
S



6-67
D
S



6-68
C
S



6-69
B
S



6-70
S
S



6-71
S
S



6-72
S
S



6-73
S
S



6-74
S
S



6-75
A
A



6-76
B
A



6-77
B
A



6-78
D
S



6-79
D
S



6-80
D
S



6-81
D
S



6-82
D
S



6-83
D
S



6-84
D
S



6-85
C
S



6-86
B
S



6-87
S
S



6-88
S
S



6-89
S
S



6-90
S
S



6-91
S
S



6-92
S
A



6-93
S
A



6-94
A
A



6-95
A
A



6-96
B
A



6-97
B
A



6-98
B
A



6-99
B
A



6-100
D
B



6-101
D
B



6-102
D
B



6-103
D
B



6-104
D
B



6-105
D
B



6-106
D
B



6-107
C
B



6-108
B
B



6-109
B
B



6-110
S
B



6-111
S
B



6-112
S
B



6-113
S
B



6-114
S
B



6-115
S
B



6-116
S
B



6-117
S
B



6-118
S
B



6-119
A
B



6-120
A
B



6-121
B
B



6-122
B
B



6-123
D
B



6-124
D
B



6-125
D
B



6-126
D
B



6-127
D
B



6-128
D
B



6-129
D
B



6-130
C
B



6-131
C
B



6-132
B
B



6-133
B
B



6-134
S
B



6-135
S
B



6-136
S
B



6-137
S
B



6-138
S
B



6-139
S
B



6-140
S
B



6-141
S
B



6-142
S
B



6-143
A
B



6-144
A
B



6-145
B
B



6-146
B
B



6-147
B
B



6-148
D
B



6-149
D
B



6-150
D
B



6-151
D
B



6-152
D
B



6-153
C
B



6-154
C
B



6-155
C
B



6-156
C
B



6-157
B
B



6-158
B
B



6-159
S
B



6-160
S
B



6-161
S
B



6-162
S
B



6-163
S
B



6-164
S
B



6-165
S
B



6-166
S
B



6-167
S
B



6-168
A
B



6-169
A
B



6-170
A
B



6-171
B
B



6-172
B
B



6-173
D
B



6-174
D
B



6-175
D
B



6-176
D
B



6-177
D
B



6-178
D
B



6-179
C
B



6-180
C
B



6-181
C
B



6-182
C
B



6-183
B
B



6-184
B
B



6-185
B
B



6-186
S
B



6-187
S
B



6-188
S
B



6-189
S
B



6-190
S
B



6-191
S
B



6-192
S
B



6-193
S
B



6-194
S
B



6-195
S
B



6-196
A
B



6-197
A
B



6-198
A
B



6-199
B
B



6-200
B
B



6-201
E
B



6-202
D
C



6-203
D
C



6-204
D
C



6-205
D
C



6-206
D
C



6-207
D
C



6-208
C
C



6-209
C
C



6-210
C
C



6-211
C
C



6-212
C
C



6-213
B
C



6-214
B
C



6-215
B
C



6-216
S
C



6-217
S
C



6-218
S
C



6-219
S
C



6-220
S
C



6-221
S
C



6-222
S
C



6-223
S
C



6-224
S
C



6-225
S
C



6-226
S
C



6-227
S
C



6-228
A
C



6-229
A
C



6-230
A
C



6-231
B
C



6-232
B
C



6-233
D
C



6-234
D
C



6-235
D
C



6-236
D
C



6-237
D
C



6-238
D
C



6-239
C
C



6-240
C
C



6-241
C
C



6-242
C
C



6-243
C
C



6-244
C
C



6-245
B
C



6-246
B
C



6-247
B
C



6-248
S
C



6-249
S
C



6-250
S
C



6-251
S
C



6-252
S
C



6-253
S
C



6-254
S
C



6-255
S
C



6-256
S
C



6-257
S
C



6-258
S
C



6-259
S
C



6-260
A
C



6-261
A
C



6-262
A
C



6-263
A
C



6-264
B
C



6-265
B
C



6-266
D
C



6-267
D
C



6-268
D
C



6-269
D
C



6-270
D
C



6-271
C
C



6-272
C
C



6-273
C
C



6-274
C
C



6-275
C
C



6-276
C
C



6-277
C
C



6-278
B
C



6-279
B
C



6-280
B
C



6-281
S
C



6-282
S
C



6-283
S
C



6-284
S
C



6-285
S
C



6-286
S
C



6-287
S
C



6-288
S
C



6-289
S
C



6-290
S
C



6-291
S
C



6-292
S
C



6-293
S
C



6-294
A
C



6-295
A
C



6-296
A
C



6-297
A
C



6-298
B
C



6-299
B
C



6-300
D
C



6-301
D
C



6-302
D
C



6-303
D
C



6-304
D
C



6-305
D
C



6-306
C
C



6-307
C
C



6-308
C
C



6-309
C
C



6-310
C
C



6-311
C
C



6-312
C
C



6-313
C
C



6-314
B
C



6-315
B
C



6-316
B
C



6-317
S
C



6-318
S
C



6-319
S
C



6-320
S
C



6-321
S
C



6-322
S
C



6-323
S
C



6-324
S
C



6-325
S
C



6-326
S
C



6-327
S
C



6-328
S
C



6-329
S
C



6-330
S
C



6-331
S
C



6-332
A
C



6-333
A
C



6-334
A
C



6-335
A
C



6-336
A
C



6-337
B
C



6-338
B
C



6-339
B
C



Com. Ex. 6-1
C
D



Com. Ex. 6-2
C
D



Com. Ex. 6-3
B
D



Com. Ex. 6-4
C
D



Com. Ex. 6-5
E
D



Com. Ex. 6-6
G
S



Com. Ex. 6-7
G
S



Com. Ex. 6-8
G
S



Com. Ex. 6-9
G
S





















TABLE 17







No.
Bubbles rank
Unmelted rank









7-1
E
S



7-2
E
S



7-3
B
S



7-4
B
S



7-5
C
S



7-6
E
S



7-7
E
S



7-8
E
S



7-9
E
S



7-10
D
S



7-11
B
S



7-12
B
S



7-13
B
S



7-14
B
S



7-15
C
S



7-16
C
S



7-17
D
S



7-18
D
S



7-19
D
S



7-20
D
S



7-21
C
S



7-22
A
S



7-23
A
S



7-24
A
S



7-25
A
S



7-26
B
S



7-27
B
S



7-28
D
S



7-29
D
S



7-30
D
S



7-31
D
S



7-32
D
S



7-33
D
S



7-34
C
S



7-35
C
S



7-36
A
S



7-37
A
S



7-38
S
S



7-39
S
S



7-40
S
S



7-41
A
S



7-42
A
S



7-43
B
S



7-44
B
S



7-45
D
S



7-46
D
S



7-47
D
S



7-48
D
S



7-49
D
S



7-50
D
S



7-51
A
S



7-52
S
S



7-53
S
S



7-54
S
S



7-55
S
S



7-56
A
S



7-57
A
S



7-58
B
S



7-59
B
S



7-60
D
S



7-61
D
S



7-62
D
S



7-63
D
S



7-64
D
S



7-65
D
S



7-66
D
S



7-67
D
S



7-68
C
S



7-69
B
S



7-70
S
S



7-71
S
S



7-72
S
S



7-73
S
S



7-74
S
S



7-75
A
A



7-76
B
A



7-77
B
A



7-78
D
S



7-79
D
S



7-80
D
S



7-81
D
S



7-82
D
S



7-83
D
S



7-84
D
S



7-85
C
S



7-86
B
S



7-87
S
S



7-88
S
S



7-89
S
S



7-90
S
S



7-91
S
S



7-92
S
A



7-93
S
A



7-94
A
A



7-95
A
A



7-96
B
A



7-97
B
A



7-98
B
A



7-99
B
A



7-100
D
B



7-101
D
B



7-102
D
B



7-103
D
B



7-104
D
B



7-105
D
B



7-106
D
B



7-107
C
B



7-108
B
B



7-109
B
B



7-110
S
B



7-111
S
B



7-112
S
B



7-113
S
B



7-114
S
B



7-115
S
B



7-116
S
B



7-117
S
B



7-118
S
B



7-119
A
B



7-120
A
B



7-121
B
B



7-122
B
B



7-123
D
B



7-124
D
B



7-125
D
B



7-126
D
B



7-127
D
B



7-128
D
B



7-129
D
B



7-130
C
B



7-131
C
B



7-132
B
B



7-133
B
B



7-134
S
B



7-135
S
B



7-136
S
B



7-137
S
B



7-138
S
B



7-139
S
B



7-140
S
B



7-141
S
B



7-142
S
B



7-143
A
B



7-144
A
B



7-145
B
B



7-146
B
B



7-147
B
B



7-148
D
B



7-149
D
B



7-150
D
B



7-151
D
B



7-152
D
B



7-153
C
B



7-154
C
B



7-155
C
B



7-156
C
B



7-157
B
B



7-158
B
B



7-159
S
B



7-160
S
B



7-161
S
B



7-162
S
B



7-163
S
B



7-164
S
B



7-165
S
B



7-166
S
B



7-167
S
B



7-168
A
B



7-169
A
B



7-170
A
B



7-171
B
B



7-172
B
B



7-173
D
B



7-174
D
B



7-175
D
B



7-176
D
B



7-177
D
B



7-178
D
B



7-179
C
B



7-180
C
B



7-181
C
B



7-182
C
B



7-183
B
B



7-184
B
B



7-185
B
B



7-186
S
B



7-187
S
B



7-188
S
B



7-189
S
B



7-190
S
B



7-191
S
B



7-192
S
B



7-193
S
B



7-194
S
B



7-195
S
B



7-196
A
B



7-197
A
B



7-198
A
B



7-199
B
B



7-200
B
B



7-201
E
B



7-202
D
C



7-203
D
C



7-204
D
C



7-205
D
C



7-206
D
C



7-207
D
C



7-208
C
C



7-209
C
C



7-210
C
C



7-211
C
C



7-212
C
C



7-213
B
C



7-214
B
C



7-215
B
C



7-216
S
C



7-217
S
C



7-218
S
C



7-219
S
C



7-220
S
C



7-221
S
C



7-222
S
C



7-223
S
C



7-224
S
C



7-225
S
C



7-226
S
C



7-227
S
C



7-228
A
C



7-229
A
C



7-230
A
C



7-231
B
C



7-232
B
C



7-233
D
C



7-234
D
C



7-235
D
C



7-236
D
C



7-237
D
C



7-238
D
C



7-239
C
C



7-240
C
C



7-241
C
C



7-242
C
C



7-243
C
C



7-244
C
C



7-245
B
C



7-246
B
C



7-247
B
C



7-248
S
C



7-249
S
C



7-250
S
C



7-251
S
C



7-252
S
C



7-253
S
C



7-254
S
C



7-255
S
C



7-256
S
C



7-257
S
C



7-258
S
C



7-259
S
C



7-260
A
C



7-261
A
C



7-262
A
C



7-263
A
C



7-264
B
C



7-265
B
C



7-266
D
C



7-267
D
C



7-268
D
C



7-269
D
C



7-270
D
C



7-271
C
C



7-272
C
C



7-273
C
C



7-274
C
C



7-275
C
C



7-276
C
C



7-277
C
C



7-278
B
C



7-279
B
C



7-280
B
C



7-281
S
C



7-282
S
C



7-283
S
C



7-284
S
C



7-285
S
C



7-286
S
C



7-287
S
C



7-288
S
C



7-289
S
C



7-290
S
C



7-291
S
C



7-292
S
C



7-293
S
C



7-294
A
C



7-295
A
C



7-296
A
C



7-297
A
C



7-298
B
C



7-299
B
C



7-300
D
C



7-301
D
C



7-302
D
C



7-303
D
C



7-304
D
C



7-305
D
C



7-306
C
C



7-307
C
C



7-308
C
C



7-309
C
C



7-310
C
C



7-311
C
C



7-312
C
C



7-313
C
C



7-314
B
C



7-315
B
C



7-316
B
C



7-317
S
C



7-318
S
C



7-319
S
C



7-320
S
C



7-321
S
C



7-322
S
C



7-323
S
C



7-324
S
C



7-325
S
C



7-326
S
C



7-327
S
C



7-328
S
C



7-329
S
C



7-330
S
C



7-331
S
C



7-332
A
C



7-333
A
C



7-334
A
C



7-335
A
C



7-336
A
C



7-337
B
C



7-338
B
C



7-339
B
C



Com. Ex. 7-1
C
D



Com. Ex. 7-2
C
D



Com. Ex. 7-3
B
D



Com. Ex. 7-4
C
D



Com. Ex. 7-4
E
D



Com. Ex. 7-5
G
S



Com. Ex. 7-6
G
S



Com. Ex. 7-7
G
S



Com. Ex. 7-8
G
S










The surface of each glass obtained was polished flat and smooth. The interior of the glass was magnified and observed (40 to 100-fold) from the polished surface with an optical microscope, and the number of residual bubbles was counted. The number of residual bubbles counted was divided by the mass of the glass corresponding to the magnified area observed to obtain the density of residual bubbles.


Glasses with 0 residual bubbles/kg were ranked S. Glasses with 2 or fewer residual bubbles/kg were ranked A. Glasses with 3 to 10 residual bubbles/kg were ranked B. Glasses with 11 to 20 residual bubbles/kg were ranked C. Glasses with 21 to 40 residual bubbles/kg were ranked D. Glasses with 41 to 60 residual bubbles/kg were ranked E. And glasses with 61 or more residual bubbles/kg were ranked G. The corresponding rankings of the various glasses are given in Tables 11 to 17.


Glasses containing neither unmelted nor foreign matter were ranked S. Glasses containing 2 pieces/kg or less of foreign matter, including unmelted material, were ranked A. Glasses containing 3-10 pieces/kg or more of foreign matter were ranked B. Glasses containing 11-20 pieces/kg or more of foreign matter were ranked C. And glasses containing 21 pieces/kg or more of foreign matter were ranked D. The corresponding ranks of the various glasses are given in Tables 11 to 17. Rank D indicated unsuitability as a glass material for an information-recording medium substrate.


The size of the residual bubbles in each of the various glasses prepared from Nos. 1-1 to 7-339 shown in Tables 11 to 17 was 0.3 mm or less.


No crystals or unmelted starting materials were found in the glasses thus obtained.


Based on the results given in Table 9 and Tables 10 to 17, the relation between the quantities of Sn and Ce added and the density of residual bubbles was determined. The quantities of Sn and Ce added are adjusted so that the density of residual bubbles is at or below a desired value, and glasses are produced. It is thus possible to suppress the density of residual bubbles to a desired level.


Next, glasses were prepared by the same method as above, with the exceptions that the temperature of glass melts that had been maintained for 15 hours at 1,400 to 1,600° C. was lowered, the glass melts were maintained for 1 to 2 hours at 1,200 to 1,400° C., and molding was conducted. The density and size of the residual bubbles were examined, and the presence of crystals and unmelted starting materials was checked. This yielded the same results as above. When the period of maintenance at 1,400 to 1,600° C. is denoted as TH and the period of maintenance at 1,200 to 1,400° C. is denoted as TL, the ratio of TL/TH for all of the above-described methods is desirably 0.5 or lower, preferably 0.2 or lower. By increasing TH relative to TL, discharge of gas in the glass to the exterior of the glass is facilitated. However, to enhance the incorporating effect of gas in the glass by Ce, TL/TH is desirably greater than 0.01, preferably greater than 0.02, more preferably greater than 0.03, and still more preferably, greater than 0.04.


To enhance the bubble eliminating effects of Sn and Ce, the temperature difference in the course of decreasing the temperature from the 1,400 to 1,600° C. range to the 1,200 to 1,400° C. range is desirably 30° C. or greater, preferably 50° C. or greater, more preferably 80° C. or greater, still more preferably 100° C. or greater, and yet more preferably, 150° C. or greater. The upper limit of the temperature difference is 400° C.


The viscosity at 1,400° C. of each of the glasses of Nos. 1-1 to 7-339 in Tables 11 to 17 was measured by the viscosity measuring method employing a coaxial double cylinder rotating viscometer of JIS Standard Z8803.


The viscosity at 1,400° C. of each of the glasses of No. 1-1 to No. 1-339 in Tables 11 to 17 is 300 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 2-1 to No. 2-339 is 250 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 3-1 to No. 3-339 is 400 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 4-1 to No. 4-339 is 350 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 5-1 to No. 5-339 is 300 dPa·s. The viscosity at 1,400° C. of each of the glasses of No. 6-1 to No. 6-339 is 320 dPa·s. And the viscosity at 1,400° C. of each of the glasses of No. 7-1 to No. 7-339 is 320 dPa·s.


Among the various glasses of Nos. 1-1 to 7-339 in Tables 11 to 17, the Young's modulus of the various glasses of Nos. 1-1 to 1-339 is 81 GPa or higher, and that of Nos. 5-1 to 5-339 is 84 GPa or higher. In each of the above glasses, when neither Sn nor Ce is added, or when Sb is added without adding Sn and Ce, it is possible to obtain a glass with a higher Young's modulus than when Sn and Ce were added. For each of the glasses of Nos. 2-1 to 2-339, Nos. 3-1 to 3-339, Nos. 4-1 to 4-339, Nos. 6-1 to 6-339, and Nos. 7-1 to 7-339, as well, it is possible to increase the Young's modulus by adding Sn and Ce. Increasing the Young's modulus makes it possible to achieve good fluttering resistance during high-speed rotation in magnetic recording media equipped with substrates manufactured from these glasses.


When substrates fabricated using the various glasses shown in Tables 11 to 17 were irradiated with UV light and observed in a darkroom, they were visually observed to emit blue fluorescence. This fluorescence could be used to determine whether or not foreign matter, such as residual abrasive or minute dust particles, had adhered to the substrate surface. The presence of blue fluorescence due to Ce could also be used to determine whether heterogeneous glass substrates in which no Ce had been added had been mixed in with the glass substrates to which Ce had been added.


Each of the glasses to which Ce was added was processed into a flat sheet 1 mm in thickness with two optically polished surfaces. Light was directed vertically into the optically polished surfaces. The spectral transmittance was measured, and the wavelength λ(lambda)80 at which the external transmittance become 80 percent (including the loss due to reflection at the glass surface) and the wavelength λ(lambda)5 at which it became 5 percent were measured. The following are measurement results for some of the glasses. Glass No. 1-23 (quantity of SnO2 added: 0.3 mass percent; quantity of CeO2 added: 0.2 mass percent) had a λ80 of 354 nm and a λ5 of 327 nm. Glass No. 1-38 (quantity of SnO2 added: 0.5 mass percent; quantity of CeO2 added: 0.3 mass percent) had a λ80 of 360 nm and a λ5 of 335 nm. Glass No. 1-71 (quantity of SnO2 added: 0.7 mass percent; quantity of CeO2 added: 0.5 mass percent) had a λ80 of 366 nm and a λ5 of 342 nm. This shows that as the quantity of Ce added was increased, the absorption by the glass in the short wavelength range tended to increase. Along with this tendency, the fluorescent intensity of the glass when irradiated with UV light also increased. The addition of Ce is desirable to make it possible to distinguish between glasses based on the fluorescence emitted when irradiated with UV light and to generate adequately strong fluorescence to permit the detection of foreign matter on the glass surface. Accordingly, an examination of the relation between λ80, λ5, and the fluorescent intensity suited to these applications revealed that a λ80 of 320 nm or greater provided adequate fluorescent intensity. On this basis, the quantity of Ce added is desirably determined to yield a λ80 of 320 nm or greater. The quantity of Ce added is preferably determined to yield a λ80 of 330 nm or greater. The quantity of Ce added is more preferably determined to yield a λ80 of 350 nm or greater. And the quantity of Ce added is still more preferably determined to yield a λ80 of 355 nm or greater. Similarly, for λ5, the quantity of Ce added is desirably determined to yield a λ5 of 300 nm or greater. The quantity of Ce added is preferably determined to yield a λ5 of 310 nm or greater. The quantity of Ce added is more preferably determined to yield a λ5 of 320 nm or greater. And the quantity of Ce added is still more preferably determined to yield a λ5 of 330 nm or greater.


From the perspective of ready distinction and detection based on fluorescence, the quantity of CeO2 added is desirably 0.1 mass percent or greater, preferably 0.2 mass percent or greater, and more preferably, 0.3 mass percent or greater. For distinction and detection by fluorescence, when λ80 or the quantity of CeO2 added is outside the above-stated range, it is impossible to achieve an adequate fluorescent intensity. This renders distinction and detection difficult.


(2) Molding of the Glass

Disk-shaped substrate blanks were fabricated from the above glasses by methods A to C below. Substrate blanks were fabricated by the same four methods of A to D as in Embodiment A from the glasses of Nos. 1-1 to 1-339 and Nos. 2-1 to 2-339. For the other glasses, substrate blanks were fabricated by method A. For the glasses of Nos. 1-1 to 1-339 and Nos. 2-1 to 2-339, the results of residual bubbles and etching rates given in the tables are the results for the substrate blanks fabricated by method A. The same holds true for the results for the substrate blanks fabricated by methods B to D.


(3) Substrate Fabrication

Glass substrates were fabricated by the same method as in Embodiment A from substrate blanks obtained by the various above methods.


Portions of the glass substrates that had been fabricated were subjected to a masking treatment to protect the portions from etching. The glass substrates in this state were immersed in a 0.5 volume percent hydrogenfluosilicic acid aqueous solution maintained at 50° C. or a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. for a prescribed period. Subsequently, the glass substrates were withdrawn from the various aqueous solutions. The difference (etching difference) between the masked portions and the portions without masks was measured, and then divided by the immersion time to calculate the amount of etching (etching rate) per unit time. The acid etching rates and alkali etching rates obtained are given in the tables, respectively. Etching rates were measured for the glasses of Nos. 1-1 to 1-339 and Nos. 2-1 to 2-339. Each of the glasses of Nos. 1-1 to 1-339 and Nos. 2-1 to 2-339 had an acid etching rate of 3.0 nm/minute or less and an alkali etching rate of 0.1 nm/minute or less. This indicates good acid resistance and alkali resistance.


In the same manner as the various glasses of Nos. 1-1 to 1-339 and Nos. 2-1 to 2-339, the various glasses of Nos. 3-1 to 3-339, Nos. 4-1 to 4-339, and Nos. 6-1 to 6-339 also exhibited acid etching rates of 3.0 nm/minute or less and alkali etching rates of 0.1 nm/minute or less, indicating good acid resistance and alkali resistance.


Next, potassium nitrate (60 mass percent) and sodium nitrate (40 mass percent) were mixed and heated to 375° C. to prepare a chemical strengthening salt. Glass substrates that had been cleaned and preheated to 300° C. were immersed for 3 hours in this salt to conduct a chemical strengthening treatment. This treatment caused lithium ions and sodium ions on the surface of the glass substrates to be replaced with sodium ions and potassium ions, respectively, in the chemical strengthening salt, thereby chemically strengthening the glass substrates. The thickness of the compressive stress layer formed in the surfaces of the glass substrates was about 100 to 200 micrometers. Following chemical strengthening, the glass substrates were rapidly cooled by immersion in a vat of water at 20° C. and maintained there for about 10 minutes.


Next, the rapidly cooled glass substrates were immersed in sulfuric acid that had been heated to about 40° C. and cleaned while applying ultrasound. Subsequently, the glass substrates were cleaned with a 0.5 percent (volume percent) hydrogenfluosilicic acid (H2SiF) aqueous solution followed by a 1 mass percent potassium hydroxide aqueous solution. Through the process, a magnetic disk glass substrate 12 was manufactured.


The magnetic disk glass substrate was then examined. Atomic force microscopic (AFM) measurement (a 5×5 micrometer rectanglar area was measured) of the surface roughness of the magnetic disk glass substrate revealed a maximum peak height (Rmax) of 1.5 nm and an arithmetic average roughness (Ra) of 0.15 nm. The surface was in a clean mirror-surface state, free of the presence of foreign material hindering magnetic head flying, and free of foreign matter causing thermal asperity impediments. No increase in the roughness of the substrate surface was observed following cleaning. Next, the bending strength was measured. The bending strength was obtained as the value of the load when the glass substrate was damaged when a load was applied to the glass substrate as shown in FIG. 2 using a bending strength measuring and testing device (Shimadzu Autograph DDS-2000). The bending strength obtained, at 24.15 kg, was satisfactory.


In the above description, acid cleaning and alkali cleaning were conducted after chemical strengthening, but it is also possible to conduct acid cleaning and alkali cleaning after the mirror-surface polishing step.


A magnetic disk 10 was fabricated using the glass substrate 12 that had been thus obtained, and tested in a hard disk drive. FIG. 1 shows a typical film configuration (cross-section) on substrate 12.


First, a film-forming device in which a vacuum had been drawn was employed to successively form adhesive layer 14 and soft magnetic layer 16 in an argon atmosphere by DC magnetron sputtering.


Adhesive layer 14 was formed as a 20 nm amorphous CrTi layer using a CrTi target. Soft magnetic layer 16 was formed as a 200 nm amorphous CoTaZr layer (Co: 88 atomic percent, Ta: 7 atomic percent, Zr: 5 atomic percent) using a CoTaZr target.


Magnetic disk 10, on which films up to soft magnetic layer 16 had been formed, was removed from the film-forming device. The surface roughness thereof was measured as set forth above, revealing a smooth mirror surface with an Rmax of 2.1 nm and an Ra of 0.20 nm. Measurement of the magnetic characteristics with a vibrating sample magnetometer (VSM) revealed a coercivity (Hc) of 2 Oersteds and a saturation magnetic flux density of 810 emu/cc. This indicated suitable soft magnetic characteristics.


Next, a single-wafer static opposed-type film-forming device was employed to successively form an underlayer 18, granular structure size reduction enhancing layer 20, granular structure ferromagnetic layer 32, magnetic coupling control layer 34, energy exchange control layer 36, and protective film 24 in an argon atmosphere. In the present embodiment, underlayer 18 had a two-layer structure comprised of a first layer and a second layer.


In this process, a layer 10 nm in thickness of amorphous NiTa (Ni: 40 atomic percent, Ta: 10 atomic percent) was first formed on the disk substrate as the first layer of underlayer 18, followed by the formation of a Ru layer 10 to 15 nm in thickness as the second layer.


Next, a nonmagnetic CoCr—SiO2 target was employed to form size reduction enhancing layer 20 comprised of a 2 to 20 nm hcp crystalline structure. A CoCrPt—SiO2 hard magnetic material target was then employed to form ferromagnetic layer 32 comprised of a 15 nm hcp crystalline structure. The composition of the target for fabricating ferromagnetic layer 32 was Co: 62 atomic percent; Cr: 10 atomic percent; Pt: 16 atomic percent, and SiO2: 12 atomic percent. A magnetic coupling control layer 34 in the form of a Pd layer was then formed, and an energy exchange control layer 36 in the form of [CoB/Pd]n layers was formed.


CVD employing ethylene as the material gas was then used to form protective film 24 comprised of carbon hydride. The use of carbon hydride increased film hardness, making it possible to protect magnetic recording layer 22 from impact with the magnetic head.


Subsequently, lubricating layer 26 comprised of perfluoropolyether (PFPE) was formed by dip coating. Lubricating layer 26 was 1 nm in thickness. A vertical magnetic recording medium in the form of magnetic disk 10 suited to vertical magnetic recording methods was obtained by the above manufacturing process. The roughness of the surface obtained was measured in the same manner as above, revealing a smooth mirror surface with an Rmax of 2.2 nm and an Ra of 0.21 nm.


The magnetic disk 10 that had been obtained was loaded onto a 2.5-inch loading/unloading hard disk drive. The magnetic head mounted on the hard disk drive was a dynamic flying height (abbreviated as “DFH”) magnetic head. The flying height of the magnetic head relative to the magnetic disk was 8 nm.


A recording and reproducing test was conducted at a recording density of 200 Gbits/inch2 in the recording and reproducing region of the main surface of the magnetic disk using this hard disk drive, revealing good recording and reproducing characteristics. During the test, no crash faults or thermal asperity faults were generated.


Next, a load unload (“LUL” hereinafter) test was conducted with the hard disk drive.


The LUL test was conducted with 2.5-inch hard disk drive rotating at 5,400 rpm and a magnetic head with a flying height of 8 nm. The above-described magnetic head was employed. The shield element was comprised of NiFe alloy. The magnetic disk was loaded on the magnetic disk device, LUL operations were repeatedly conducted with the above magnetic head, and the LUL cycle durability was measured.


Following the LUL durability test, the surface of the magnetic disk and the surface of the magnetic head are examined visually and by optical microscopy to check for abnormalities such as scratches and grime. In the LUL durability test, a durability of 400,000 or more LUL cycles without failure is required, with a durability of 600,000 cycles or more being particularly desirable. In the use environment in which a hard disk drive (HDD) is normally employed, it is reported to take about 10 years of use to exceed 600,000 LUL cycles.


When the LUL test was implemented, magnetic disk 10 met the 600,000 cycle or more standard. Following the LUL test, magnetic disk 10 was removed and inspected, revealing no abnormalities such as scratches or grime. Any precipitation of alkali metal components was observed.


Comparative Example B

Next, the 63 glasses of Comparative Examples 1-1 to 1-9, Comparative Examples 2-1 to 2-9, Comparative Examples 3-1 to 3-9, Comparative Examples 4-1 to 4-9, Comparative Examples 5-1 to 5-9, Comparative Examples 6-1 to 6-9, and Comparative Examples 7-1 to 7-9 shown in Tables 11 to 17 were fabricated. The glasses of the comparative examples were fabricated by the same procedure as in the embodiments.


Excess quantities of Sn oxide and Ce oxide were added as clarifying agents to the glasses of Comparative Examples 1-1 to 7-1, Comparative Examples 1-2 to 7-2, and Comparative Examples 1-3 to 7-3 shown in Tables 11 to 17.


Residual unmelted Sn oxide was observed in all of these glasses, rendering them unsuitable as glass substrate materials for information-recording media.


Sb alone was added as clarifying agent to the glasses of Comparative Examples 1-6 to 7-6 shown in Tables 11 to 17. Sn and an excess quantity of Sb were added as clarifying agents to the glasses of Comparative Examples 1-7 to 8-7. An excess quantity of Sn was added as clarifying agent to the glasses of Comparative Examples 1-8 to 8-8. And an excess quantity of Ce was added as clarifying agent to the glasses of Comparative Examples 1-9 to 8-9 shown in Tables 11 to 17.


The number of residual bubbles exceeded 100 bubbles/kg in all of these glasses. Localized pitting due to residual bubbles was also observed on the surface of glass substrates fabricated by the same methods as in the embodiments using these glasses. The impact resistance of the substrates was also poorer than that of the embodiments.


BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 A drawing showing an example of the configuration of a magnetic disk relating to an implementing mode of the present invention.



FIG. 2 A descriptive diagram of the method used to measure bending strength.

Claims
  • 1. A glass for a magnetic recording medium substrate comprised of an oxide glass comprising, as converted based on the oxide, denoted as molar percentages: SiO2 60 to 75 percent,Al2O3 1 to 15 percent,Li2O 5 to 10 percent,Na2O 8 to 15 percent,P2O5 0 percent, andK2O 0 to 5 percent,wherein if there is any one or more of MgO, CaO, SrO or BaO, the total amount of such components is in a range of 0.1 to 10% and a total content of Li2O, Na2O, and K2O is 25 percent or lower;wherein the total amount of MgO, CaO, SrO or BaO is in a range of 0.1 to 5 mol %, and,a total quantity of Sn oxide and Ce oxide of 0.5 mass percent to 1.5 mass percent based on the total amount of the glass components, wherein the ratio of the content of Sn oxide to the total content Sn oxide and Ce oxide (content of Sn oxide/(content of Sn oxide+content of Ce oxide)) is 0.45 to 0.85, an Sb oxide content of 0 to 0.1 percent, and comprising no As or F.
  • 2. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass does not comprise Sb.
  • 3. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass comprises, denoted as molar percentages: MgO 0 to 10 percent,CaO 0 to 10 percent,SrO 0 to 5 percent, andBaO 0 to 5 percent.
  • 4. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass comprises 0.1 to 5 molar percent of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total.
  • 5. The glass for a magnetic recording medium substrate according to claim 1, wherein the total content of SiO2 and Al2O3 is 65 molar percent or greater, and the glass has a viscous property such that the viscosity at 1,400° C. is 103 dPa·s or lower.
  • 6. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass comprises, denoted as molar percentages: SiO2 66 to 70 percent,Al2O3 7 to 12 percent(where the total content of SiO2 and Al2O3 is 75 percent or greater),Li2O 5 to 10 percent,Na2O 8 to 13 percent,K2O 0.1 to 2 percent(wherein the total content of Li2O, Na2O, and K2O is 15 to 22 percent),MgO 0.1 to 5 percent,CaO 0.1 to 5 percent,SrO and BaO in total 0 to 1 percent,ZrO2 0.1 to 2 percent,B2O3 0 to 1 percent, andZnO 0 to 1 percent.
  • 7. The glass for a magnetic recording medium substrate according to claim 1 wherein the glass comprises, denoted as molar percentages: SiO2 66 to 70 percent,Al2O3 5 to 12 percent,Li2O 5 to 10 percent,Na2O 8 to 13 percent,K2O 0.1 to 2 percent(wherein the total content of Li2O, Na2O, and K2O is 18 to 22 percent),MgO and CaO in total 0 to 5 percent,SrO and BaO in total 0 to 5 percent,ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 in total 0.1 to 5 percent,B2O3 0 to 3 percent,ZnO 0 to 1 percent, andP2O5 0 percent.
  • 8. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass exhibits an acid resistant property such that the etching rate when immersed in a 0.5 volume percent hydrogenfluosilicic acid aqueous solution maintained at 50° C. is 3.0 nm/minute or less and an alkali resistant property such that the etching rate when immersed in a 1 mass percent potassium hydroxide aqueous solution maintained at 50° C. is 0.1 nm/minute or less.
  • 9. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass contains 100 pieces/kg or less of residual bubbles.
  • 10. The glass for a magnetic recording medium substrate according to claim 1, wherein the ratio of the ZrO2 content to the total content of ZrO2, TiO2, La2O3, Nb2O5, Ta2O5, and HfO2 (ZrO2/(ZrO2+TiO2+La2O3+Nb2O5+Ta2O5+HfO2)) is 0.1 to 1.
  • 11. The glass for a magnetic recording medium substrate according to claim 1, wherein the glass has been subjected to a chemical strengthening treatment.
  • 12. A magnetic recording medium substrate comprised of the glass according to claim 1.
  • 13. The magnetic recording medium substrate according to claim 12, wherein roughness Ra of the main surface of the substrate is less than 0.25 nm.
  • 14. The magnetic recording medium substrate according to claim 13, wherein the substrate exhibits a bending strength of 10 kg or greater.
  • 15. The magnetic recording medium substrate of claim 13, wherein the substrate has a disklike shape and a thickness of 1 mm or less.
  • 16. A magnetic recording medium having an information recording layer on the magnetic recording medium substrate according to claim 12.
  • 17. The magnetic recording medium according to claim 16, suited to a vertical magnetic recording method.
Priority Claims (2)
Number Date Country Kind
2008-072096 Mar 2008 JP national
2008-170845 Jun 2008 JP national
CROSS-REFERENCES TO RELATED PATENT APPLICATIONS

This application is a Divisional of U.S. application Ser. No. 12/933,398, filed Dec. 20, 2010, which is a §371 National Stage Application of International Application No. PCT/JP2009/001203, filed Mar. 18, 2009 which claims priority to Japanese Application No. 2008-072096, filed Mar. 19, 2008 and Japanese Application No. 2008-170845, filed Jun. 30, 2008, the disclosure of each is incorporated herein by reference The present application claims priority under Japanese Patent Application 2008-72096, filed on Mar. 19, 2008, and Japanese Patent Application 2008-170845, filed on Jun. 30, 2008, the entire contents of which are hereby incorporated by reference.

Divisions (1)
Number Date Country
Parent 12933398 Dec 2010 US
Child 14665857 US