Claims
- 1. A low melting point glass paste for forming a dielectric layer of a plasma display panel which includes a pair of substrates defining a plasma discharge space therebetween, the dielectric layer covering transparent electrodes and bus electrodes formed on one substrate of the pair of substrates, said low melting point glass paste comprising:a PbO—SiO2—B2O3—ZnO glass composition or a PbO—SiO2—B2O3—ZnO—BaO glass composition, the glass composition further including an oxide of a first metallic element which is the same as a main constituent of the bus electrodes.
- 2. The low melting point glass paste of claim 1, wherein the glass composition further includes an oxide of a second metallic element which is the same as a main constituent of the transparent electrodes.
- 3. The low melting point glass paste of claim 1, wherein the bus electrodes include copper as the main constituent, and the glass composition includes copper oxide in an amount of 0.1 to 1.0 weight %.
- 4. The low melting point glass paste of claim 1, wherein the bus electrodes include copper as the main constituent, and the glass composition further includes copper oxide in an amount of 0.1 to 1.0 weight %.
- 5. A low melting point glass for forming a dielectric layer of a plasma display panel which includes a pair of substrates defining a plasma discharge space therebetween, the dielectric layer covering transparent electrodes and bus electrodes formed on one substrate of the pair of substrates, said low melting point glass comprising:a PbO—SiO2—B2O3—ZnO composition or a PbO—SiO2—B2O3—ZnO—BaO composition, the composition further comprising an oxide of a metallic element which is the same as a main constituent of the bus electrode.
- 6. The low melting point glass of claim 5, wherein the glass composition further includes an oxide of a metallic element which is the same as a main constituent of the transparent electrodes.
- 7. The low melting point glass of claim 5, wherein the bus electrodes include copper as the main constituent, and the composition includes copper oxide in an amount of 0.1 to 1.0 weight %.
- 8. The low melting point glass of claim 6, wherein the bus electrodes include copper as the main constituent, and the glass composition includes copper oxide in an amount of 0.1 to 1.0 weight %.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-196800 |
Jun 1998 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims priority from Japanese Patent Application No. 10-196800 filed Jun. 25, 1998, the contents of which are incorporated herein by reference. This application is a divisional application of U.S. Ser. No. 09/236,581 Filed Jan. 26, 1999 now U.S. Pat. No. 6,337,538.
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Number |
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Date |
Kind |
5589733 |
Noda et al. |
Dec 1996 |
A |
5793158 |
Wedding, Sr. |
Aug 1998 |
A |
Foreign Referenced Citations (2)
Number |
Date |
Country |
0 788 131 |
Aug 1997 |
EP |
7-282989 |
Oct 1995 |
JP |
Non-Patent Literature Citations (4)
Entry |
Patent Abstracts of Japan, vol. 098, No. 009, Jul. 31, 1998 and JP 10 112265 A (Matsushita Electric Ind Co Ltd), Apr. 28, 1998. |
Patent Abstracts of Japan, vol. 018, No. 623 (E-1635), Nov. 28, 1994 and JP 06 243788 A (Hokuriku Toryo KK), Sep. 2, 1994. |
Japanese Laid OPen Patent No. 5-165042, of the Patent Abstract of Japan, Jun. 29, 1993. |
Japanese Laid Open Patent No. 10-112265, respectively of the Patent Abstract of Japan and “Scope of Patent Claim” in English and Japanese, Apr. 28, 1998. |