Graded thickness optical element and method of manufacture therefor

Information

  • Patent Grant
  • 6606199
  • Patent Number
    6,606,199
  • Date Filed
    Wednesday, October 10, 2001
    23 years ago
  • Date Issued
    Tuesday, August 12, 2003
    21 years ago
Abstract
A graded optical element is provided that includes graded layers of optical material, wherein the layers may or may not have different indexes of refraction. A method for making such a graded thickness optical element is also provided. A masking layer is preferably spaced above a substrate, where the masking layer has at least one aperture therein. Optical material is then deposited on the substrate through the aperture in the masking layer to form a layer of refr material that extends laterally beyond the aperture in the masking layer in at least one region.
Description




BACKGROUND OF THE INVENTION




This invention relates to the field of optical elements and devices, and more particularly to graded thickness optical elements.




Conventional optical elements and devices have found widespread use in modern technology for producing, receiving and/or controlling light, for example, in communication systems, laser printers, compact disk players, and so on. For many such applications, a light source such as a semiconductor laser or LED is coupled to a semiconductor receiver (e.g. photodiode) through a fiber optic link, free space, or off a reflective surface.




In some cases, micro mirrors are used to direct light as desired, such as in wavelength division multiplexing, optical filtering, as well as other applications. Micro-mirrors are also commonly used to, for example, create optical cavities, such as Fabry-Perot cavities, for Vertical Cavity Surface Emitting Lasers (VCSEL), Resonant Cavity Photo Detectors (RCPD), and other devices. A limitation of many conventional micro-mirrors is that the reflectance provided by the micro-mirror is uniform across the optical path or cavity. When applied to VCSEL and RCPD devices, for example, such uniform lateral reflectance can favor multi-mode operation. For many applications, however, a single lowest-order mode of operation is desirable. A single lowest-order mode can help couple the light into single-mode fibers, and may also be desirable for free-space and/or wavelength sensitive systems.




Micro-lenses have also found widespread use in many of today's systems. Micro-lenses are often used for focusing, directing, and/or controlling light in a wide variety of optical applications. For example, micro-lenses can be used to help align optical fibers, such as single mode optical fibers, with other electro-optical elements, such as LEDs, VCSELs, RCPDs, etc. Micro-lenses can also be used in printer, compact disk player, and other applications to considerable advantage.




SUMMARY OF THE INVENTION




The present invention provides a graded thickness optical element for use in a wide variety of applications, including those mentioned above and many others. It is contemplated that the graded thickness optical element of the present invention may function as a mirror, a lens or both, depending on the application. In a preferred embodiment, the graded thickness optical element includes one or more layers, each having a thickness that is graded laterally across the optical element. For micro-lens applications, the refractive index of selected layers may be substantially the same. For micro-mirror applications, the refractive index of selected layers may be different from adjacent layers. Methods for forming the graded thickness optical element are also contemplated. In a preferred embodiment, the graded thickness optical element is formed by depositing one or more layers of the optical element through an aperture that is spaced above a receiving substrate, wherein the deposited graded thickness optical element extends laterally beyond the aperture, in at least one region.











BRIEF DESCRIPTION OF DRAWINGS





FIG. 1

is a cross-sectional side view of an illustrative graded thickness optical element in accordance with the present invention;





FIGS. 2A-2H

are schematic diagrams showing an illustrative method of manufacture a graded thickness optical element in accordance with the present invention;





FIG. 3

is a cross-sectional side view of an illustrative graded thickness optical element that is used in conjunction with an electro-optical device; and





FIG. 4

is a cross-sectional side view of an illustrative graded thickness optical element at an advanced stage of manufacture in accordance with the present invention.











DETAILED DESCRIPTION OF THE INVENTION




The following description should be read with reference to the drawings wherein like reference numerals indicate like elements throughout the several drawings. The detailed description and drawings are only illustrative of the present invention, and are not intended to be limiting.





FIG. 1

is a cross-sectional side view of an illustrative graded thickness optical element


110


in accordance with the present invention. Optical element


110


includes an optical layer stack generally shown at


112


. Optical layer stack


112


includes individual layers


114




a-g


. Layers


114




a-g


each having an edge region generally shown at


116


, and a center region generally shown at


118


. Preferably, at least some of the individual layers


114




a-g


are thicker in the center region


118


than in the edge region


116


, and have a generally curved upper surface, as shown. Optical layer stack


112


may be generally circular, if desired, but this is not required.




Preferably, each individual layer


114


is made of an optical material such as a dielectric or semiconductor material having an index of refraction and that is at least partially transparent at the desired wavelength range. In the illustrative embodiment, layers


114




a


-


114




g


have alternating indexes of refraction. For example layers


114




a


,


114




c


,


114




e


and


114




g


may have a first index of refraction, and layers


114




b


,


114




d


, and


114




f


have a second index of refraction. Such a configuration may be particularly suitable for forming a micro-mirror, as described above. However, it is contemplated that a micro-lens may be easily formed by providing layers


14




a-




14




g


with the same or similar indexes of refraction. Preferably, when forming a micro-lens, one or just a few layers


114


are provided, to reduce any reflections at the interface of the layers


114


.





FIGS. 2A through 2H

are schematic diagrams showing an illustrative method for forming a graded thickness optical element, such as optical element


110


of FIG.


1


. Referring first to

FIG. 2A

, a substrate


226


is shown with an optical device


228


such as a VCSEL, RCPD, LED or other optical device formed therein. Optical device


228


is optional, and the desirability of providing the optical device


228


will depend on the application at hand.




In the illustrative embodiment, and referring now to

FIG. 2B

, a spacer layer


230


may be provided as a spacer. Spacer layer


230


may be made from any suitable material that is susceptible to an isotropic etching process. It is contemplated that spacer layer


230


may be made from several different layers, if desired. In a preferred embodiment, spacer layer


230


is a polymer such as polyimide, which is deposited by spin coating on substrate


226


. Once layer


230


is provided, a masking layer


232


may be provided. As described more fully below, masking layer


232


can be used as a mask when depositing the one or more layers


114




a-g


of the graded thickness optical element


110


. In a preferred embodiment, masking layer


232


is silicon dioxide deposited by plasma enhanced chemical vapor deposition (PECVD). It is contemplated, however, that masking layer


232


may be made from any material that is resistant to the etching process used to etch spacer layer


230


, as further described below. It is also contemplated that the masking layer


232


may be provided by any thin film epitaxy process such as e-beam, thermal, and/or sputter coating.




Next, a photo-resist layer


234


is preferably provided over masking layer


232


, preferably using spin coating. Photo-resist layer


234


is then patterned using conventional patterning techniques such as photolithography to create an aperture


236


therein, as shown in FIG.


2


C. Once the aperture


236


is formed in the photo-resist layer


234


, masking layer


232


is etched preferably using a selective etch to produce aperture


238


therein as shown in FIG.


2


D. Aperture


238


preferably has a substantially vertical lateral edge


250


, as shown.




Once aperture


238


is formed in masking layer


232


, intermediate spacer layer


230


is etched through aperture


238


, preferably using a selective reactive ion etch (RIE) to create an aperture


240


having a lateral edge


242


, as shown in FIG.


2


E. Aperture


240


is preferably etched using an isotropic selective etch so that lateral edge


242


of aperture


240


extends laterally beyond the lateral edge


250


in the masking layer


232


in at least one direction, but preferably in all directions.




A graded thickness optical element


110


(see

FIG. 1

) may then be deposited through the aperture


238


in the masking layer


232


. In the illustrative embodiment, layers


114




a-




114




g


are sequentially deposited through aperture


238


. For example, a first material having a first index of refraction may be deposited through aperture


238


to produce a first layer


114




g


of optical layer stack


112


, as shown in FIG.


2


F. The deposition is preferably an optical quality vacuum deposition process, or other suitable process as desired. Since masking layer


232


and aperture


238


are spaced from the surface of the substrate


226


, more material tends to be deposited in center region


118


than in edge region


116


, resulting in the center region


118


being thicker than the edge region


116


. Also, the top surface of each deposited layer tends to be curved, as shown.




Once first layer


114




g


is provided, a second layer


114




f


is deposited through aperture


238


. This second layer


114




f


may be of the same refractive material as the first layer


114




g


, or a different refractive material that has a different index of refraction. Like the first layer


114




g


, the second layer


114




f


is preferably an optical quality glass, polymer, semiconductor and/or dielectric such as GaAs, AlGaAs, SiO


2


, Si


3


N


4


, TiO


2


or other suitable material. Additional layers


114




e-




114




a


may also be deposited, if desired, to form an optical layer stack as shown in FIG.


2


G.




The shape of optical element


110


may be controlled by several parameters. Some of these parameters include the shape and size of aperture


240


in spacer layer


230


, the thickness of spacer layer


230


, the shape, size and position of aperture


240


in spacer layer


230


relative to aperture


238


in masking layer


232


, and the thickness of lateral edge


250


of aperture


238


. Other parameters include the refractive material deposition method, the material used, and the amount of material deposited. These parameters may be adjusted to alter the shape and characteristics of optical element


110


, depending on the particular application. In some embodiments, layers


230


,


232


and


234


may be removed, as shown in

FIG. 2H

, to expose the optical element


110


.




When forming micro-mirrors, layers


114




a-




114




g


may be relatively thin, and the indexes of refraction may alternate between adjacent layers. When forming a micro-lens, one or more thicker layers may be provided, with each layer having the same or similar refractive index.




If substrate


226


includes one or more optical elements as shown, such as optical element


228


, at least a portion of layer


114




g


may be in contact with the optical element


228


. Alternatively a spacer or buffer layer (not shown) may be provided between the optical element


228


and layer


114




g


. In addition, it is contemplated that layer


114




g


may be centered on optical element


228


, as is shown in

FIG. 2F

, or laterally offset from optical element


228


, depending on the application.




It is contemplated that optical element


110


may be part of, or assist in the operation of, optical device


228


. For example, optical device


228


may be a Vertical Cavity Surface Emitting Laser (VCSEL), and optical element


110


may function as all or part of the top mirror of the VCSEL. As is known, VCSEL devices typically have a lasing cavity defined by two reflective mirrors, such as Distributed Bragg reflectors including semiconductor and/or dielectric mirror stacks. The graded thickness optical element


110


of the present invention may help create a top mirror with a reflectivity that varies laterally across the optical cavity of the VCSEL. To reduce the number of modes of the VCSEL, the reflectivity of the top mirror preferably decreases towards the lateral edges of optical cavity. Thus, when properly configured, the present invention may be used to help provide mode control of VCSEL devices. Such mode control can be similarly applied to RCPDs, if desired.




Alternatively, and as shown in

FIG. 3

, the optical element


300


may function as a micro-lens. Preferably, the optical element


300


includes a single or a relatively small number of thicker layers, each having a graded thickness. When optical device


328


is a light emitting or light receiving device, such as a light emitting diode (LED), a VCSEL, a photo-diode, RCPD or other light emitting or receiving device, the optical element


300


may, for example, increase the angle of visibility of the light, focus the light, direct the light in a particular direction, etc. Optical device


328


is optional, and need not be provided in the substrate as shown.




The optical element may have a plano-concave region as shown in FIG.


4


. The steps to create an optical element


410


having a curved upper surface with a concave region


452


are substantially the same as those used to create optical element


110


as described above. Aperture


236


photo-etched in layer


234


is shaped such that a portion of layer


234


is surrounded on at three side by aperture


236


. Thus, when the isotropic etching process is used to etch aperture


240


in layer


230


, a part of layers


234


and


232


projects over aperture


240


, connected to the other parts of layers


234


and


232


by a neck. There may also be a plurality of apertures


236


, located proximate to each other such that one aperture


240


is formed during the isotropic etching process. When material is deposited through aperture


236


, less material will tend to get deposited in regions that are under layers


234


and


232


than in regions that are under aperture


236


. Thus, a concave region


452


surrounded by convex regions


454


of element


410


will be formed. In a preferred embodiment, layers


230


,


232


and


234


are removed to expose the optical element.




If substrate


226


includes an optical device


228


, optical element


410


may assist in the operation of the device. Concave region


452


may be used to focus or direct light from an LED or VCSL. Concave region


452


may also be used as part of an unstable resonant cavity that preferentially favors high power single mode emission




While the invention is susceptible to various modifications, and alternative forms, specific examples thereof have been shown in the drawings and are herein described in detail. It should be understood, however, that the invention is not to be limited to the particular forms or methods disclosed, but to the contrary, the invention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the appended claims.



Claims
  • 1. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and providing an intermediate layer between the first layer and the substrate wherein the intermediate layer has an aperture that extends laterally beyond the aperture in the first layer in at least one region; and wherein the steps of providing the first layer and the intermediate layer include the steps of: applying the intermediate layer adjacent the substrate; applying the first layer adjacent the intermediate layer; applying a third layer adjacent the first layer; creating an aperture in the third layer; creating an aperture in the first layer; and creating an aperture in the intermediate layer, wherein the aperture in the intermediate layer extends laterally beyond the aperture in the first layer in the at least one region.
  • 2. The method of claim 1, wherein the third layer is a photo-resist layer, and the aperture in the third layer is created using photolithography.
  • 3. The method of claim 1, wherein the aperture in the first layer is created using an etching process.
  • 4. The method of claim 1, wherein the aperture in the intermediate layer is created using an isotropic etching process.
  • 5. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and providing an intermediate layer between the first layer and the substrate wherein the intermediate layer has an aperture that extends laterally beyond the aperture in the first layer in at least one region, wherein the intermediate layer is a polymer.
  • 6. The method of claim 5, wherein the polymer is polyimide.
  • 7. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; and providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and wherein: the substrate includes an optical device under the optical layer; the optical device is a light detector; the light detector is a Resonant Cavity Photo Detector; and the graded thickness optical element is a mirror that at least contributes to the reflectance of a top mirror of the Resonant Cavity Photo Detector.
  • 8. The method of claim 7 wherein the reflectance of the graded thickness optical element changes across the graded thickness optical element.
  • 9. The method of claim 8 wherein the reflectance of the graded thickness optical element decreases toward the lateral edges of the graded thickness optical element.
  • 10. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; and providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and wherein the step of providing one or more materials to the substrate through the aperture in the first layer to form a graded thickness optical layer comprises the steps of: depositing a first layer of refractive material having a first index of refraction; and depositing a second layer of refractive material having a second index of refraction.
  • 11. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; and providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and wherein the step of providing one or more materials to the substrate through the aperture in the first layer to form a graded thickness optical layer comprises the steps of alternately depositing a layer of refractive material having a first index of refraction and depositing a layer of refractive material having a second index of refraction.
  • 12. The method of claim 11, wherein the first index of refraction is different from the second index of refraction.
  • 13. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and providing an intermediate layer between the first layer and the substrate wherein the intermediate layer has an aperture that extends laterally beyond the aperture in the first layer in at least one region; and wherein the first layer is a dielectric material.
  • 14. A method of making a graded thickness optical element, the method comprising the steps of:providing a first layer having an aperture spaced above a substrate; and providing one or more materials on the substrate through the aperture in the first layer to form a graded thickness optical element that extends laterally beyond the aperture in at least one region; and wherein: the substrate includes an optical device under the optical layer; the optical device is a light detector; and the light detector is a Resonant Cavity Photo Detector.
  • 15. An optical element comprising:a plurality of refractive layers, each layer having a center region, an edge region and an index of refraction; and wherein: the center region of each layer is thicker than the edge region and selected layers have different indexes of refraction; and at least one of the layers includes a dielectric material.
Government Interests

This invention was made with United States Government support under 70NAHB8H4023 awarded by NIST. The United States Government has certain rights in the invention.

US Referenced Citations (64)
Number Name Date Kind
3981023 King et al. Sep 1976 A
4317085 Brunham et al. Feb 1982 A
4466694 MacDonald Aug 1984 A
4660207 Svilans Apr 1987 A
4784722 Liau et al. Nov 1988 A
4885592 Kofol et al. Dec 1989 A
4901327 Bradley Feb 1990 A
4943970 Bradley Jul 1990 A
4956844 Goodhue et al. Sep 1990 A
4971423 Nakata et al. Nov 1990 A
5031187 Orenstein et al. Jul 1991 A
5052016 Mahbobzadeh et al. Sep 1991 A
5056098 Anthony et al. Oct 1991 A
5062115 Thornton Oct 1991 A
5068869 Wang et al. Nov 1991 A
5115442 Lee et al. May 1992 A
5140605 Paoli et al. Aug 1992 A
5158908 Blonder et al. Oct 1992 A
5216263 Paoli Jun 1993 A
5216680 Magnusson et al. Jun 1993 A
5237581 Asada et al. Aug 1993 A
5245622 Jewell et al. Sep 1993 A
5258990 Olbright et al. Nov 1993 A
5285466 Tabatabaie Feb 1994 A
5293392 Shieh et al. Mar 1994 A
5315128 Hunt et al. May 1994 A
5317170 Paoli May 1994 A
5317587 Ackley et al. May 1994 A
5325386 Jewell et al. Jun 1994 A
5331654 Jewell et al. Jul 1994 A
5337074 Thornton Aug 1994 A
5349599 Larkins Sep 1994 A
5351256 Schneider et al. Sep 1994 A
5359447 Hahn et al. Oct 1994 A
5359618 Lebby et al. Oct 1994 A
5363397 Collins et al. Nov 1994 A
5373520 Shoji et al. Dec 1994 A
5404373 Cheng Apr 1995 A
5416044 Chino et al. May 1995 A
5428634 Bryan et al. Jun 1995 A
5446754 Jewell et al. Aug 1995 A
5475701 Hibbs-Brenner Dec 1995 A
5513202 Kobayashi et al. Apr 1996 A
5530715 Shieh et al. Jun 1996 A
5555255 Kock et al. Sep 1996 A
5557626 Grodinski et al. Sep 1996 A
5561683 Kwon Oct 1996 A
5568499 Lear Oct 1996 A
5598300 Magnusson et al. Jan 1997 A
5606572 Swirhun et al. Feb 1997 A
5642376 Olbright et al. Jun 1997 A
5727013 Botez et al. Mar 1998 A
5728509 Eda et al. Mar 1998 A
5774487 Morgan Jun 1998 A
5778018 Yoshikawa et al. Jul 1998 A
5818066 Duboz Oct 1998 A
5838715 Corzine et al. Nov 1998 A
5903590 Hadley et al. May 1999 A
5940422 Johnson Aug 1999 A
5978401 Morgan Nov 1999 A
6055262 Cox et al. Apr 2000 A
6122109 Peake et al. Sep 2000 A
6154480 Magnusson et al. Nov 2000 A
6365237 Peake et al. Apr 2002 B1
Foreign Referenced Citations (1)
Number Date Country
5-299779 Nov 1993 JP
Non-Patent Literature Citations (29)
Entry
Banwell et al., “VCSE Laser Transmitters for Parallel Data Links”, IEEE Journal of Quantum Electronics, vol. 29, No. 2, Feb. 1993, pp. 635-644.
Catchmark et al., “High Temperature CW Operation of Vertical Cavity Top Surface-Emitting Lasers”, CLEO 1993, p. 138.
Chemla et al., “Nonlinear Optical Properties of Semiconductor Quantum Wells”, Optical Nonlinearities and Instabilities in Semiconductors, Academic Press, Inc., Copyright 1988, pp. 83-120.
Choa et al., “High-Speed Modulation of Vertical-Cavity Surface-Emitting Lasers”, IEEE Photonics Technology Letter, vol. 3, No. 8, Aug. 1991, pp. 697-699.
G. G. Ortiz, et al., “Monolithic Integration of In0.2 GA0.8As Vertical Cavity Surface-Emitting Lasers with Resonance-Enhanced Quantum Well Photodetectors”, Electronics Letters, vol. 32, No. 13, Jun. 20, 1996, pp. 1205-1207.
Graf, Rudolph, Modern Dictionary of Electronics, 6th ed., Indiana: Howard W. Sams & Company, 1984, p. 694.
Jewell et al., “Surface Emitting Microlasers for Photonic Switching & Intership Connections”, Optical Engineering, vol. 29, No. 3, pp. 210-214, Mar. 1990.
Jewell et al., “Surface-Emitting Microlasers for Photonic Switching and Interchip Connections”, Optical Engineering, vol. 29, No. 3, Mar. 1990, pp. 210-214.
Kishino et al., “Resonant Cavity-Enhanced (RCE) Photodetectors”, IEEE Journal of Quantum Electronics, vol. 27, No. 8, pp. 2025-2034.
Kuchibhotla et al., “Low-Voltage High Gain Resonant_Cavity Avalanche Photodiode”, IEEE Photonics Technology Letters, vol. 3, No. 4, pp. 354-356.
Lai et al., “Design of a Tunable GaAs/AlGaAs Multiple-Quantum-Well Resonant Cavity Photodetector”, IEEE Journal of Quantum Electronics, vol. 30, No. 1, pp. 108-114.
Lee et al., “Top-Surface Emitting GaAs Four-Quantum-Well Lasers Emitting at 0-85 um”, Electronics Letters, vol. 24, No. 11, May 24, 1990, pp. 710-711.
Lehman et al., “High Frequency Modulation Characteristics of Hybrid Dielectric/AlGaAs Mirror Singlemode VCSELs”, Electronic Letters, vol. 31, No. 15, Jul. 20, 1995, pp. 1251-1252.
Miller et al., “Optical Bistability Due to Increasing Absorption”, Optics Letters, vol. 9, No. 5, May 1984, pp. 162-164.
Morgan et al., “200 C, 96-nm Wavelength Range, Continuous-Wave Lasing from Unbonded GaAs MOVPE-Grown Vertical Cavity Surface-Emitting Lasers”, IEEE Photonics Technology Letters, vol. 7, No. 5, May 1995, pp. 441-443.
Jiang et al., “High-Frequency Polarization Self-Modulation in Vertical-Cavity Surface-Emitting Lasers”, Appl. Phys. Letters, vol. 63, No. 26, Dec. 27, 1993, pp. 2545-2547.
Morgan et al., “High-Power Coherently Coupled 8×8 Vertical Cavity Surface Emitting Laser Array”, Appl. Phys Letters, vol. 61, No. 10, Sep. 7, 1992, pp. 1160-1162.
Morgan et al., “Hybrid Dielectric/AlGaAs Mirror Spatially Filtered Vertical Cavity Top-Surface Emitting Laser”, Appl. Phys. Letters, vol. 66, No. 10, Mar. 6, 1995, pp. 1157-1159.
Morgan et al., “Novel Hibrid-DBR Single-Mode Controlled GaAs Top-Emitting VCSEL with Record Low Voltage”, 2 pages, dated prior to Dec. 29, 2000.
Morgan et al., “Progress and Properties of High-Power Coherent Vertical Cavity Surface Emitting Laser Arrays”, SPIE, Vo. 1850, Jan. 1993, pp. 100-108.
Morgan et al., “Progress in Planarized Vertical Cavity Surface Emitting Laser Devices and Arrays”, SPIE, vol. 1562, Jul. 1991, pp. 149-159.
Morgan et al., “Submilliamp, Low-Resistance, Continuous-Wave, Single-Mode GaAs Planar Vertical-Cavity Surface Emitting Lasers”, Honeywell Technology Center, Jun. 6, 1995.
Morgan et al., “Transverse Mode Control of Vertical-Cavity Top-Surface Emitting Lasers”, IEEE Photonics Technology Letters, vol. 4, No. 4, Apr. 1993, pp. 374-377.
Morgan et al., “Vertical Cavity Surface Emitting Laser Arrays: Come of Age,”, Invited paper, SPIE, vol. 2683-04, OE LASE 96; Photonics West: Frabrication, Testing and Reliablity of Semiconductor Lasers, (SPIE<Bellingham, WA, 1996).
Morgan et al., “Vertical-Cavity Surface-Emitting Laser Arrays” SPIE, vol. 2398, Feb. 1995, pp. 65-93.
Morgan, “High-Performance, Producible Vertical Cavity Lasers for Optical Interconnects”, High Speed Electronics and Systems, vol. 5, No. 4, Dec. 1994, pp. 65-95.
Morgan, “Transverse Mode Control of Vertical-Cavity Top-Surface Emitting Lasers”, IEEE Phot. Tech. Lett., vol. 4, No. 4, p. 374, Apr. 1993.
Nugent et al., “Self-Pulsations in Vertical-Cavity Surface-Emitting Lasers”, Electronic Letters, vol. 31, No. 1, Jan. 5, 1995, pp. 43-44.
U.S. patent application Ser. No. 09/751,422, filed Dec. 29, 2000, entitled “Resonant Reflector for Use with Optoelectronic Devices”.