Claims
- 1. A semiconductor laser device, comprising:
a waveguide having separate first order reflector gratings at both ends of said waveguide; an outcoupling location positioned between said gratings on said waveguide, connected to couple light out of said waveguide.
- 2. The device of claim 1, wherein said gratings are distributed Bragg reflectors.
- 3. The device of claim 1, wherein said light is coupled out at an angle other than the normal to the surface of said device.
- 4. The device of claim 1, wherein said outcoupling location comprises a first order grating which couples light out of said waveguide.
- 5. The device of claim 1, further comprising a reflective surface positioned atop the device at said outcoupling aperture to reflect light downward through the bottom of said device.
- 6. The device of claim 1, wherein said outcoupling location comprises a holographic optical element.
- 7. A semiconductor laser device, comprising:
a waveguide structure having first and second reflectors, one at either end of said waveguide; a first set of electrodes connected to pump a first gain region portion of said waveguide structure adjacent to said first reflector; a second set of electrodes connected to pump a second gain region portion of said waveguide structure adjacent to said second reflector; an outcoupling aperture positioned between said first and second gain region portions on said waveguide structure, connected to couple light out of said waveguide structure.
- 8. The device of claim 7, wherein at least one of said reflectors is a facet with a reflective coating.
- 9. The device of claim 7, wherein said first set of electrodes comprises two parts, one of said parts being used to modulate said device.
- 10. The device of claim 7, wherein said outcoupling aperture comprises a first order grating with a non-circular footprint.
- 11. The device of claim 7, wherein said outcoupling aperture is matched to the mode of a fiber waveguide.
- 12. The device of claim 7, wherein said outcoupling aperture comprises a grating having a layer of material thereon, said layer limiting the number of photons exiting said aperture.
- 13. The device of claim 7, wherein said device is integrated with other optical elements on a single semiconductor substrate.
- 14. A semiconductor laser device, comprising:
a cavity having reflectors at either end and an outcoupling aperture connected to outcouple light from said cavity; a gain region of said cavity located between said reflectors, said gain region having a first portion on one side of said outcoupling aperture and a second portion on the opposite side of said outcoupling aperture.
- 15. The device of claim 14, wherein said first portion of said gain region has two parts, one of said parts being used to modulate said device.
- 16. The device of claim 14, wherein said outcoupling aperture comprises a beam splitter which outcouples light by reflecting it in a direction perpendicular to the surface of said device.
- 17. The device of claim 14, further comprising a dielectric coating on said outcoupling aperture, said coating reducing the number of photons exiting said outcoupling aperture.
- 18. The device of claim 14, further comprising a reflective layer on said outcoupling aperture which reflects light downward through the bottom of said device.
- 19. The device of claim 14, wherein said outcoupling aperture comprises a grating with a circular footprint.
- 20. The device of claim 14, wherein said reflectors are distributed Bragg reflectors each having a grating strength, and wherein said grating strength for at least one of said reflectors varies laterally and longitudinally with respect to said cavity.
- 21. A semiconductor laser system, comprising:
a cavity having reflectors at either end and an outcoupling aperture connected to outcouple light from said cavity, said outcoupling aperture located between said reflectors; a gain region of said cavity located between said reflectors; a reflective layer positioned on said outcoupling aperture.
- 22. The system of claim 21, wherein said gain region has multiple parts, one of which has a variable current for modulating the output light.
- 23. The system of claim 21, wherein said reflective layer reflects light downward through the bottom of said cavity.
- 24. The system of claim 21, wherein said gain region has multiple parts, one of which has a variable current for tuning the wavelength of the output light.
- 25. The system of claim 21, wherein light is coupled out of the laser normal to the surface of the laser.
- 26. The system of claim 21, wherein said system is integrated on a single semiconductor substrate with other optical elements.
- 27. A semiconductor laser system, comprising:
a cavity having reflectors at either end and an outcoupling aperture connected to outcouple light from said cavity, said outcoupling aperture located between said reflectors; a gain region of said cavity located between said reflectors; wherein said gain region is divided into a plurality of sections, one of said sections being connected to modulate said light.
- 28. The system of claim 27, wherein at least one of said reflectors is a distributed Bragg reflector.
- 29. The system of claim 27, wherein said outcoupling aperture comprises a grating which couples light out of the laser at an angle other than normal to the surface of said laser.
CROSS-REFERENCE TO OTHER APPLICATION
[0001] This application claims priority from 60/200,603 Filed Apr. 28, 2000; 60/200,454 Filed Apr. 28, 2000; 60/209,822 Filed Jun. 6, 2000; 60/230,534 Filed Sep. 1, 2000; and 60/235,090 Filed Sep. 25, 2000, filed Apr. 28, 2000, which is hereby incorporated by reference.
Provisional Applications (5)
|
Number |
Date |
Country |
|
60200603 |
Apr 2000 |
US |
|
60200454 |
Apr 2000 |
US |
|
60209822 |
Jun 2000 |
US |
|
60230534 |
Sep 2000 |
US |
|
60235090 |
Sep 2000 |
US |