Claims
- 1. An organosilicon dendrimer comprising a dendrimer arm including a metal-containing unit, wherein a metal in the metal-containing unit is a Group 4 metal selected from the group consisting of Ti, Zr, and Hf.
- 2. The dendrimer of claim 1 wherein said organosilicon is selected from the group consisting of carbosilane, siloxane and hybrids thereof.
- 3. The dendrimer of claim 1 wherein said dendrimer is further characterized by a dendrimer arm end and said metal-containing unit is located at said dendrimer arm end.
- 4. The dendrimer of claim 1 wherein said dendrimer is further characterized by a dendrimer core and said dendrimer arm is further characterized by a dendrimer arm end and a dendrimer arm interior intermediate between said dendrimer core and said dendrimer end and wherein said metal-containing unit is located at said dendrimer arm interior.
- 5. The dendrimer of claim 1 wherein said metal-containing unit is a metallocene unit.
- 6. The dendrimer of claim 5 wherein said metallocene unit is a bis(cyclopentadienyl) complex further characterized by the formula ##STR38## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal and ##STR39## denotes a bond connecting said metallocene unit to said dendrimer arm.
- 7. The dendrimer of claim 6 wherein said chalcogen substituent is selected from the group consisting of O.sub.2 CR, OR, O.sub.3 SCF.sub.3 and SR wherein R is an organic substituent selected from the group consisting of alkyl, polyfluoroalkyl, and aryl.
- 8. The dendrimer of claim 6 wherein said halide is selected from the group consisting of F, Cl, Br and I.
- 9. The dendrimer of claim 5 wherein said metallocene unit is characterized by the formula ##STR40## further including an R substituent wherein n is the number of said R substituents and n is an integer in the range of from about 1 to about 5 and R is selected from the group consisting of alkyl and aryl groups and Z is selected from the group consisting of chalcogen, halide, alkyl, aryl and amide substituents.
- 10. The dendrimer of claim 9 wherein said alkyl group is a methyl group.
- 11. The dendrimer of claim 9 wherein said aryl group is selected from the group consisting of phenyl and benzyl groups.
- 12. The dendrimer of claim 5 wherein said metallocene unit is characterized by the formula ##STR41## and further includes an R substituent wherein m is the number of said R substituents and m is an integer in the range of from about 1 to about 4, n is the number of said R substituents and n is an integer in the range of from about 1 to about 5 and R is selected from the group consisting of alkyl and aryl groups, and Z is selected from the group consisting of chalcogen, halide, alkyl, aryl and amide substituents.
- 13. The dendrimer of claim 12 wherein said alkyl group is a methyl group.
- 14. The dendrimer of claim 12 wherein said aryl group is selected from the group consisting of phenyl and benzyl groups.
- 15. The dendrimer of claim 5 wherein said metallocene unit further includes a bridging group represented by ##STR42## and is characterized by the formula ##STR43## wherein R is selected from the group consisting of alkyl and aryl, m is the number of said R substituents and m is an integer in the range of from about 0 to about 3, n is the number of said R substituents and n is an integer in the range of from about 0 to about 4, and Z is selected from the group consisting of chalcogen, halide, alkyl, aryl and amide substituents.
- 16. The dendrimer of claim 15 wherein said bridging group is an organic bridging group selected from the group consisting of CH.sub.2, CH.sub.2 CH.sub.2, CMe.sub.2, CH.sub.2 CH.sub.2 CH.sub.2, Me.sub.2 CCMe.sub.2, and CH.dbd.CH.
- 17. The dendrimer of claim 15 wherein said bridging group is an organosilicon bridge selected from the group consisting of SiMe.sub.2, SiMe.sub.2 CH.sub.2 SiMe.sub.2, SiMe.sub.2 CH.sub.2 CH.sub.2 SiMe.sub.2, Me.sub.2 SiSiMe.sub.2 and Me.sub.2 SiOSiMe.sub.2.
- 18. The dendrimer of claim 5 wherein said metallocene unit further includes a functional group represented by ##STR44## and is characterized by the formula ##STR45## and wherein ##STR46## is selected from the group consisting of MeSiCH.sub.2 SiMe.sub.2, MeSi, PhSi, MeSiSiMe.sub.2, MeSiOSiMe.sub.2 and MeSiCH.sub.2 CH.sub.2 SiMe.sub.2 groups, R is selected from the group consisting of alkyl and aryl, m is the number of said R substituents and m is an integer in the range of from about 0 to about 4, n is the number of said R substituents and n is an integer in the range of from about 0 to about 4, and Z is selected from the group consisting of chalcogen, halide, alkyl, aryl and amide substituents.
- 19. The dendrimer of claim 5 wherein said metallocene unit is characterized by the formula ##STR47## where R is selected from the group consisting of alkyl and aryl, m is the number of said R substituents and m is an integer in the range of from about 0 to about 4.
- 20. The dendrimer of claim 5 wherein said metallocene unit is a monocyclopentadienyl unit characterized by the formula ##STR48## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal and ##STR49## denotes a bond connecting said metallocene unit to said dendrimer arm and R is a group selected from the group consisting of methyl, alkyl, and aryl, and n is an integer in the range of from about 0 to about 4.
- 21. The dendrimer of claim 5 wherein said metallocene unit is characterized by the formula ##STR50## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal and ##STR51## denotes a bond connecting said metallocene unit to said dendrimer arm.
- 22. The dendrimer of claim 5 wherein said metallocene unit is characterized by the formula ##STR52## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal, ##STR53## denotes a bond connecting said metallocene unit to said dendrimer arm, and ##STR54## represents a group selected from the group consisting of ##STR55## groups, R is selected from the group consisting of methyl, isopropyl, t-butyl, alkyl, phenyl, and aryl, and n is an integer in the range of from about 0 to about 3.
- 23. The dendrimer of claim 5 wherein said metallocene unit is further characterized by the formula ##STR56## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal, ##STR57## notes a bond connecting said metallocene unit to said dendrimer arm, ##STR58## represents a group selected from the group consisting of ##STR59## groups, R is selected from the group consisting of methyl, isopropyl, t-butyl, alkyl, and aryl, and is an integer in 10 the range of from about 0 to about 3.
- 24. The dendrimer of claim 5 wherein said metallocene unit is further characterized by the formula ##STR60## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal, ##STR61## denotes a bond connecting said metallocene unit to said dendrimer arm, ##STR62## represents a group selected from the group consisting of ##STR63## groups, and R is selected from the group consisting of methyl, isopropyl, t-butyl, alkyl, and aryl.
- 25. The dendrimer of claim 1 further including a solid phase support and wherein said dendrimer is chemically attached to said solid phase support.
- 26. The dendrimer of claim 1 wherein said dendrimer is characterized by the formula ##STR64## wherein .largecircle. represents the rest of the dendrimer, denotes a bond connecting said dendrimer arm to said dendrimer, R is selected from the group consisting of alkyl, methyl and ethyl groups, Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents
- wherein M is a Group IV metallocene substituent, M being formed from a metallocene reagent selected from the group consisting of ##STR65##
- 27. The dendrimer of claim 1 wherein said dendrimer includes an anchoring dendrimer arm characterized by the formula wherein denotes a bond connecting said anchoring dendrimer arm to said dendrimer, wherein R is selected from the group consisting of alkyl, methyl, and ethyl.
- 28. The dendrimer of claim 25 wherein said solid phase support is selected from the group consisting of refractory oxides and insoluble polymers.
- 29. A method for synthesizing an organosilicon dendrimer comprising steps of:
- (a) providing a core molecule further including a reactive functional group;
- (b) providing a silicon hydride;
- (c) providing a hydrosilylation catalyst;
- (d) reacting said silicon hydride with said core molecule in the presence of said hydrosilylation catalyst to produce an intermediate organosilicon dendrimer;
- (e) reacting said intermediate organosilicon dendrimer to introduce an unsaturated organic functional group;
- (f) repeating steps (b), (c), (d), and (e) n times using said intermediate organosilicon dendrimer as formed in step (e) as said core molecule to produce a G.sub.n generation organosilicon dendrimer wherein n is an integer in the range of from about 1 to about 10 and G.sub.n is the generation number; and
- (g) reacting said G.sub.n generation organosilicon dendrimer with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 30. The method of claim 29 wherein said G.sub.n generation organosilicon dendrimer further includes a dendrimer arm end and wherein said dendrimer arm end terminates in a Si--H functional group.
- 31. The method of claim 30 whrein said Si--H functional group is selected from the group consisting of --SiMe.sub.2 H, --SiMeChlH, --SiCl.sub.2 H, --SiMeH.sub.2, --SiR.sub.2 H, --SiRH.sub.2, and --SiRClH where R is selected from the group consisting of alkyl and aryl.
- 32. The method of claim 30 wherein said step (g) of reacting said G.sub.n generation organosilicon dendrimer with said Group 4 metal-containing reagent further comprises steps of providing a Group 4 metal-containing reagent further including an unsaturated organic functional group and reacting said Si--H functional group with said unsaturated organic functional group by a catalyzed hydrosilylation reaction.
- 33. The method of claim 29 wherein said metal-containing reagent is selected from the group consisting of metallocene reagents characterized by the formulas ##STR66## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is a Group 4 ion, R is selected from the group consisting of methyl, isopropyl, t-butyl, alkyl, and phenyl, and .fwdarw. represents an electron pair donor bond, wherein n is an integer defining a number of CH.sub.2 groups and n equals 1-2.
- 34. The method of claim 29 wherein said metal-containing reagent includes a metallocene substituent selected from the group consisting of metallocene substituents characterized by the formulas ##STR67## R is selected from the group consisting of alkyl and aryl, m is the number of R substituents and m is an integer in the range of from about 0 to about 4, and n is the number of R substituents and n is an integer in the range of from about 0 to about 4, M is said Group 4 metal and Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents.
- 35. The method of claim 29 wherein said G.sub.n generation organosilicon dendrimer further includes a dendrimer arm end and wherein said dendrimer arm end terminates in a dendrimer unsaturated organic functional group.
- 36. The method of claim 35 wherein said unsaturated organic functional group is selected from the group consisting of CH.sub.2 .dbd.CH, CH.sub.2 .dbd.CHCH.sub.2, CH.sub.2 .dbd.CH(CH.sub.2), where n is an integer in the range of from about 2 to about 10, HC.tbd.C, and HC.tbd.C(CH.sub.2).sub.n where n is an integer in the range of from about 1 to about 11.
- 37. The method of claim 35 wherein in said step (g) of reacting said G.sub.n generation organosilicon dendrimer with said Group 4 metal-containing reagent further includes providing a reagent having a Si--H substituent and reacting said Si--H substituent with said dendrimer unsaturated organic functional group by a catalyzed hydrosilylation reaction.
- 38. The method of claim 37 wherein said reagent is selected from the group consisting of reagents characterized by the formulas ##STR68## and wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, and M is said Group 4 metal.
- 39. The method of claim 29 wherein said metal-containing reagent is characterized by the formula ##STR69## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, 10M is said Group 4 metal, R is selected from the group consisting of alkyl, and aryl m is an integer in the range of from about 0 to about 5, and n is an integer in the range of from about 0 to about 4.
- 40. The method of claim 29 wherein said intermediate organosilicon dendrimer further includes a dendrimer core, a dendrimer periphery and a dendrimer internal site intermediate between said dendrimer core and said dendrimer periphery and step (f) is performed so that a reactive functionality is introduced at said dendrimer internal site, and step (g) further includes reacting said reactive functionality with said Group 4 metal-containing reagent so that said Group 4 metal is introduced at said dendrimer internal site.
- 41. The method of claim 29 wherein said intermediate organosilicon dendrimer further includes a dendrimer periphery and step (f) is performed so that a reactive functionality is introduced at said dendrimer periphery, and step (g) further includes reacting said reactive functionality with said Group 4 metal-containing reagent so that said Group 4 metal is introduced at said dendrimer periphery.
- 42. The method of claim 29 wherein said core molecule is a polymer so that a polymeric organosilicon dendrimer is formed according to step (g).
- 43. A method for synthesizing a Group 4 transition metal-containing organosilicon dendrimer comprising steps of:
- (a) providing starting monomers including at least one Si--H bond and at least two functional groups each further including a terminal .dbd.CH.sub.2 bond;
- (b) inducing a hydrosilylation reaction so that said monomers are consumed to produce an intermediate organosilicon dendrimer; and
- (c) reacting said intermediate organosilicon dendrimer with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 44. The method of claim 43 wherein said starting monomers are selected from the group consisting of HSi(CH.dbd.CH.sub.2).sub.3 ; HSi(CH.sub.2 CH.dbd.CH.sub.2).sub.3 ; HSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 2 to about 20; R(H)Si(CH.dbd.CH.sub.2).sub.2 ; R(H)Si(CH.sub.2 CH.dbd.CH.sub.2).sub.2 ; and R(H)Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2, wherein n is an integer in the range of from about 2 to about 20, R is selected from the group consisting of methyl and higher alkyl, phenyl and substituted phenyl, halogen, alkoxy, aryloxy and dialkylamino groups.
- 45. The method of claim 43 wherein said hydrosilylation reaction is induced by exposing said monomers to a reagent selected from the group consisting of transition metal complex catalysts wherein said transition metal is selected from the group consisting of Pt, Pd, Rh, Ru, Ni, and Ti; organic peroxides; azo compounds; and supported transition metal catalysts selected from the group consisting of Pt/charcoal, Pt/asbestos, and Raney Ni.
- 46. The method of claim 43 wherein said hydrosilylation reaction is induced by exposing said monomers to ultraviolet radiation.
- 47. The method of claim 43 wherein said hydrosilylation reaction is induced by heating said monomers.
- 48. The method of claim 43 wherein said hydrosilylation reaction is allowed to proceed until substantially all of said starting monomers have been consumed.
- 49. The method of claim 43 wherein said intermediate organosilicon dendrimer further includes a dendrimer periphery and said hydrosilylation reaction is allowed to proceed until steric congestion at said dendrimer periphery hinders further growth.
- 50. The method of claim 43 further including, after step (b), providing additional monomers including at least one Si--H bond and at least two functional groups each further including a terminal .dbd.CH.sub.2 bond and reacting said additional monomers with said intermediate organosilicon dendrimer.
- 51. The method of claim 50 wherein said additional monomers have the same chemical composition as said starting monomers.
- 52. The method of claim 50 wherein said additional monomers have a different chemical composition than said starting monomers.
- 53. The method of claim 52 wherein said additional monomers are characterized by the formula H(R)Si[(CH.sub.2)CH.dbd.CH.sub.2 ].sub.2 wherein R is selected from the group consisting of (CH.sub.2).sub.n CH.dbd.CH.sub.2, alkyl, aryl, halogen, alkoxy, aryloxy, and dialkylamino and n is an integer in the range of from about 0 to about 20.
- 54. The method of claim 43 wherein said intermediate organosilicon dendrimer further includes a reactive .dbd.CH.sub.2 group and, after step (b), further including a step of deactivating said reactive .dbd.CH.sub.2 group.
- 55. The method of claim 54 wherein said step of deactivating said reactive .dbd.CH.sub.2 group is accomplished by addition of a silicon hydride of composition R.sub.2 SiH wherein R is selected from the group consisting of alkyl, aryl, halogen, alkoxy, aryloxy, siloxy, and dialkylamino and mixtures thereof.
- 56. The method of claim 55 wherein said silicon hydride is selected from the group consisting of Me.sub.2 SiHCl, MeSiHCl.sub.2, HSiCl.sub.3, HSi(OEt).sub.3, HSi(OMe).sub.3, HSi(NMe.sub.2).sub.3, PhSiHCl.sub.2 and HSiMe.sub.2 OSiMe.sub.3.
- 57. The method of claim 43 wherein step (b) is carried out to produce an intermediate organosilicon dendrimer including a reactive CH.dbd.CH.sub.2 group and wherein step (c) further includes steps of adding a reagent characterized by the general formula R.sub.2 SiHX wherein R is selected from the group consisting of Me, Et, higher alkyl, and aryl and X is selected from the group consisting of F, Cl, Br, I and alkoxy and including a Si--X bond; reducing said Si--X bond to produce a reactive Si--H bond; further reacting said reactive Si--H bond with said Group 4 metal-containing reagent to form said organosilicon dendrimer including a Group 4 metal.
- 58. The method of claim 43 wherein said Group 4 metal-containing reagent is selected from the group consisting of metallocene reagents characterized by the formulas ##STR70## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is a Group 4 metal, R is selected from the group consisting of methyl, ethyl, isopropyl, t-butyl, alkyl, and phenyl, .fwdarw. represents an electron pair donor bond, and n is an integer defining a number of CH.sub.2 groups and n equals 1-2.
- 59. The method of claim 43 wherein said Group 4 metal-containing reagent is a metallocene substituent selected from the group consisting of metallocene substituents characterized by the formulas ##STR71## R is selected from the group consisting of alkyl and aryl, M is said Group 4 metal, Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, m is the number of R substituents and m is an integer in the range of from about 0 to about 4, n is the number of R substituents and n is an integer in the range of from about 0 to about 4, and ##STR72## denotes a bond connecting said metallocene substituent to said dendrimer.
- 60. The method of claim 43 wherein said intermediate organosilicon dendrimer contains a .dbd.CH.sub.2 unit and said Group 4 metal-containing reagent is selected from the group consisting of reagents characterized by the formulas ##STR73## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, and M is said Group 4 metal.
- 61. The method of claim 43 wherein said Group 4 metal-containing reagent is characterized by the formula ##STR74## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal, R is selected from the group consisting of alkyl, and aryl, m is an integer in the range of from about 0 to about 5, and n is an integer in the range of from about 0 to about 4.
- 62. The method of claim 43 further including a step of providing an OH-containing substrate, and wherein step (b) is carried out to produce an intermediate organosilicon dendrimer including a reactive CH.dbd.CH.sub.2 group and wherein step (c) further includes steps of adding a reagent characterized by the general formula R.sub.2 SiHX wherein R is selected from the group consisting of Me, Et, higher alkyl, and aryl and X is selected from the group consisting of F, Cl, Br, I and alkoxy and including a Si--X bond; reducing said Si--X bond to produce a reactive Si--H bond; further reacting said reactive Si--H bond with a deficiency of said Group 4 metal-containing reagent, said Group 4 metal-containing reagent further including a substituent selected from the group consisting of vinyl, allyl and alkynyl, to produce an intermediate product; and reacting said intermediate product with a silane selected from the group consisting of vinyl silane and allyl silane and including an SiX substituent where X is further selected from the group consisting of OMe, OEt, Cl and NMe.sub.2 to produce an anchorable organosilicon dendrimer including a Group 4 metal; and reacting said anchorable organosilicon dendrimer including a Group 4 metal with said OH-containing substrate so that said anchorable organosilicon dendrimer including a Group 4 metal is anchored to said OH-containing substrate.
- 63. A method for synthesizing a Group 4 transition metal-containing organosilicon dendrimer comprising steps of:
- (a) providing a core molecule selected from the group consisting of Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20; RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy; Si[C.sub.6 H.sub.4 (CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and C.sub.6 H.sub.4 is selected from the group consisting of para-phenylene and meta-phenylene; and RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy; and C.sub.6 H.sub.4 is selected from the group consisting of para-phenylene and meta-phenylene;
- (b) adding a first reagent selected from the group consisting of HSi(CH.dbd.CH.sub.2).sub.3 ; HSi(CH.sub.2 CH.dbd.CH.sub.2).sub.3 ; HSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3, wherein n is an integer in the range of from about 2 to about 20; R(H)Si(CH.dbd.CH.sub.2).sub.2 ; R(H)Si(CH.sub.2 CH.dbd.CH.sub.2).sub.2 ; and R(H)Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.2, wherein n is an integer in the range of from about 2 to about 20, R is selected from the group consisting of methyl and higher alkyl, phenyl and substituted phenyl, halogen, alkoxy, aryloxy and dialkylamino groups to said core to form an intermediate product;
- (c) adding additional reagent selected from the group consisting of HSi(CH.dbd.CH.sub.3).sub.2 ; HSi(CH.sub.2 CH.dbd.CH.sub.2).sub.3 ; HSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3, wherein n is an integer in the range of from about 2 to about 20; R(H)Si(CH.dbd.CH.sub.2).sub.2 ; R(H)Si(CH.sub.2 CH.dbd.CH.sub.2).sub.2 ; and R(H)Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.2, wherein n is an integer in the range of from about 2 to about 20, R is selected from the group consisting of methyl and higher alkyl, phenyl and substituted phenyl, halogen, alkoxy, aryloxy and dialkylamino groups to said intermediate product to form an intermediate organosilicon dendrimer; and
- (d) reacting said intermediate organosilicon dendrimer with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 64. The method of claim 63 wherein said Group 4 metal-containing reagent is selected from the group consisting of metallocene reagents characterized by the formulas ##STR75## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is a Group 4 ion, R is selected from the group consisting of methyl, isopropyl, t-butyl, alkyl, and phenyl, n is an integer defining a number of CH.sub.2 groups and n=1-2 and .fwdarw. represents an electron pair donor bond.
- 65. The method of claim 63 wherein said Group 4 metal-containing reagent is a metallocene substituent selected from the group consisting of metallocene substituents characterized by the formulas ##STR76## wherein R is selected from the group consisting of alkyl and aryl, m is an integer in the range of from about 0 to about 4, and is an integer in the range of from about 0 to about 4, Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents and denotes a bond connecting said metallocene substituent to said dendrimer.
- 66. The method of claim 63 wherein said intermediate organosilicon dendrimer contains a .dbd.CH.sub.2 unit and said Group 4 metal-containing reagent is selected from the group consisting of reagents characterized by the formulas ##STR77## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, and M is said Group 4 metal.
- 67. The method of claim 63 wherein said Group 4 metal-containing reagent is characterized by the formula ##STR78## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is said Group 4 metal, R is selected from the group consisting of alkyl, and aryl m is an integer in the range of from about 0 to about 5, and n is an integer in the range of from about 0 to about 4.
- 68. The method of claim 63 further including, prior to step (d), a step of reacting said intermediate organosilicon dendrimer formed in step (c) with a reagent characterized by the general formula R.sub.2 SiHX wherein R is selected from the group consisting of Me, Et, higher alkyl, and aryl and X is selected from the group consisting of F, Cl, Br, I and alkoxy and including a Si--X bond; reducing said Si--X bond to produce a reactive Si--H bond; and further reacting said reactive Si--H bond with said Group 4 metal-containing reagent to form said organosilicon dendrimer including a Group 4 metal.
- 69. The method of claim 63 further including steps of
- (e) providing an OH-containing substrate;
- (f) reacting said intermediate organosilicon dendrimer with a reagent selected from, the group consisting of HSiX.sub.3 and HSiRX.sub.2, where X is selected from the group consisting of Cl, Br, I, OMe, OEt, Oalkyl, Oaryl, and NMe.sub.2 and R is selected from the group consisting of Me, Ph, alkyl, and aryl to produce an anchorable dendrimer; and
- (g) exposing said anchorable dendrimer to said OH-containing substrate so that said anchorable dendrimer is anchored to said substrate.
- 70. A method for synthesizing a Group 4 transition metal-containing organosilicon dendrimer comprising steps of:
- (a) providing a core molecule selected from the group consisting of Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20; and RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy;
- (b) reacting said core molecule with a first reagent characterized by the formula [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 C.sub.6 H.sub.5 SiH, wherein n is an integer in the range of from about 0 to 20 to form an intermediate product;
- (c) reacting said intermediate product with a second reagent selected from the group consisting of [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.3 SiH; and [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 SiRH, wherein R is alkyl and n is integer in the range of from about 0 to 20 to form an intermediate dendrimer including reactive dendrimer arm ends;
- (d) adding a third reagent characterized by the formula R.sub.2 SiHX wherein X is selected from the group consisting of F, Cl, Br and I, and R is an alkyl group to react with said reactive dendrimer arm ends to form peripheral Si--X dendrimer arm ends wherein X is selected from the group consisting of F, Cl, Br, and I;
- (e) reducing said peripheral Si--X dendrimer arm ends to form Si--H peripheral dendrimer arm ends;
- (f) reacting said Si--H peripheral dendrimer arm ends with a reagent including a terminal olefin group to form a second intermediate dendrimer;
- (g) reacting said second intermediate dendrimer with HX, wherein X is selected from the group consisting of O.sub.3 SCF.sub.3 and Br, to form a dendrimer having a Si--X internal functionality;
- (h) reacting said dendrimer having a Si--X internal functionality with a reducing agent to form a dendrimer having a Si--H internal functionality;
- (i) reacting said dendrimer having a Si--H internal functionality with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 71. The method of claim 70 wherein said Group 4 metal-containing reagent is selected from the group consisting of metallocene reagents characterized by the formulas ##STR79## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is a Group 4 metal, R is selected from the group consisting of methyl, ethyl, isopropyl, t-butyl, alkyl, and phenyl, n is an integer defining a number of CH.sub.2 groups and n=1-2 and .fwdarw. represents an electron pair donor bond.
- 72. A method for synthesizing a Group 4 transition metal-containing organosilicon dendrimer comprising steps of:
- (a) providing a core molecule selected from the group consisting of Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20; and RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy;
- (b) reacting said core molecule with [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ]R.sub.2 SiH wherein R is selected from the group consisting of methyl and alkyl groups to form an intermediate product and n is an integer in the range of from about 0 to about 20;
- (c) reacting said intermediate product with [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 C.sub.6 H.sub.5 SiH wherein n is an integer in the range of from about 0 to about 20 to form a second intermediate product;
- (d) reacting said second intermediate product with a reagent selected from the group consisting of [CH.sub.2 .dbd.CH(CH.sub.2)n].sub.3 SiH and [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 RSiH wherein R is alkyl and n is an integer in the range of from about 0 to 20 to form an intermediate dendrimer including reactive dendrimer arm ends;
- (e) adding a second reagent characterized by the formula R.sub.2 SiHX wherein R is an alkyl group and X is selected from the group consisting of F, Cl, Br and I to react with said reactive dendrimer arm ends to form peripheral Si--X dendrimer arm ends wherein X is selected from the group consisting of F, Cl, Br, and I;
- (f) reducing said peripheral Si--X dendrimer arm ends to form Si--H peripheral dendrimer arm ends;
- (g) reacting said Si--H peripheral dendrimer arm ends with a reagent including a terminal olefin group to form a second intermediate dendrimer;
- (h) reacting said second intermediate dendrimer with HX, wherein X is selected from the group consisting of O.sub.3 SCF.sub.3 and Br, to form a dendrimer having a Si--X internal functionality;
- (i) reacting said dendrimer having a Si--X internal functionality with a reducing agent to form a dendrimer having a Si--H internal functionality;
- (j) reacting said dendrimer having a Si--H internal functionality with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 73. A method for synthesizing a Group 4 transition metal-containing organosilicon dendrimer comprising steps of:
- (a) providing a core molecule selected from the group consisting of Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20; and RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy;
- (b) reacting said core molecule with a first reagent characterized by the formula [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 C.sub.6 H.sub.5 SiH, wherein n is an integer in the range of from about 0 to 20 to form an intermediate product;
- (c) reacting said intermediate product with a second reagent selected from the group consisting of [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.3 SiH; and [CH.sub.2 .dbd.CH(CH.sub.2).sub.n ].sub.2 SiRH, wherein R is alkyl and n is an integer in the range of from about 0 to 20 to form an intermediate dendrimer including reactive dendrimer arm ends;
- (d) adding a third reagent characterized by the formula R.sub.2 SiHX where R is an alkyl group and X is selected from consisting of F, Cl, Br, and I to react with said reactive dendrimer arm ends to form peripheral Si--X dendrimer arm ends wherein X is selected from the group consisting of F, Cl, Br, and I;
- (e) alkylating said peripheral Si--X dendrimer arm ends to form a second intermediate dendrimer;
- (f) reacting said second intermediate dendrimer with HX, wherein X is selected from the group consisting of O.sub.3 SCF.sub.3 and Br, to form a dendrimer having a Si--X internal functionality;
- (g) reacting said dendrimer having a Si--X internal functionality with a reducing agent to form a dendrimer having a Si--H internal functionality;
- (h) reacting said dendrimer having a Si--H internal functionality with a Group 4 metal-containing reagent to form an organosilicon dendrimer including a Group 4 metal.
- 74. The method of claim 73 wherein said Group 4 metal-containing reagent is selected from the group consisting of metallocene reagents characterized by the formulas ##STR80## wherein Z is selected from the group consisting of chalcogen, halide, alkyl, aryl, and amide substituents, M is a Group 4 metal, R is selected from the group consisting of methyl, ethyl, isopropyl, t-butyl, alkyl, and phenyl, n is an integer defining a number of CH.sub.2 groups and n=1-2 and .fwdarw. represents an electron pair donor bond.
- 75. A method for synthesizing a carbosilane dendrimer comprising steps of:
- (a) providing starting monomers including at least one Si--H bond and at least two functional groups each further including a terminal .dbd.CH.sub.2 bond;
- (b) inducing a hydrosilylation reaction so that said monomers are consumed to produce an intermediate organosilicon dendrimer including a reactive CH.dbd.CH.sub.2 group;
- (c) adding a reagent characterized by the general formula R.sub.2 SiHX wherein R is selected from the group consisting of Me, Et, higher alkyl, and aryl and X is selected from the group consisting of F, Cl, Br, I and alkoxy; reducing said Si--X bond to produce a reactive Si--H bond; and
- (d) reacting said reactive Si--H bond with an organic compound including an unsaturated carbon-carbon bond selected from the group consisting of olefinic and acetylenic bonds to form said carbosilane dendrimer.
- 76. A method for synthesizing a carbosilane dendrimer comprising steps of:
- (a) providing a core molecule selected from the group consisting of Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20; and RSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy; Si[C.sub.6 H.sub.4 (CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.4 wherein n is an integer in the range of from about 0 to 20 and C.sub.6 H.sub.4 is selected from the group consisting of para-phenylene and meta-phenylene; and RSi[C.sub.6 H.sub.4 (CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3 wherein n is an integer in the range of from about 0 to 20 and R is selected from the group consisting of alkyl, aryl, halogen, alkoxy and aryloxy; and C.sub.6 H.sub.4 is selected from the group consisting of para-phenylene and meta-phenylene;
- (b) adding a first reagent selected from the group consisting of HSi(CH.dbd.CH.sub.2).sub.3 ; HSi(CH.sub.2 CH.dbd.CH.sub.2).sub.3 ; HSi(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3, wherein n is an integer in the range of from about 2 to about 20; R(H)Si(CH.dbd.CH.sub.2).sub.2 ; R(H)Si(CH.sub.2 CH.dbd.CH.sub.2).sub.2 ; and R(H)Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.2, wherein n is an integer in the range of from about 2 to about 20, R is selected from the group consisting of methyl and higher alkyl, phenyl and substituted phenyl, halogen, alkoxy, aryloxy and dialkylamino groups to said core molecule to form an intermediate product;
- (c) adding additional reagent selected from the group consisting of HSi(CH.dbd.CH.sub.2).sub.3 ; HSi(CH.sub.2 CH.dbd.CH.sub.2).sub.3 ; HSi[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.3, wherein n is an integer in the range of from about 2 to about 20; R(H)Si(CH.dbd.CH.sub.2).sub.2 ; R(H)Si(CH.sub.2 CH.dbd.CH.sub.2).sub.2 ; and R(H)Si[(CH.sub.2).sub.n CH.dbd.CH.sub.2 ].sub.2, wherein n is an integer in the range of from about 2 to about 20, R is selected from the group consisting of methyl and higher Alkyl, phenyl and substituted phenyl, halogen, alkoxy, aryloxy and dialkylamino groups and (CH.sub.2 .dbd.CHCH.sub.2).sub.2 (CH.sub.3)SiH to said intermediate product to form an intermediate organosilicon dendrimer including a terminal CH.dbd.CH.sub.2 ;
- (d) adding a reagent characterized by the general formula R.sub.2 SiHX wherein R is selected from the group consisting of Me, Et, higher alkyl, and aryl and X is selected from the group consisting of F, Cl, Br, I and alkoxy and including a Si--X bond; reducing said Si--X bond to produce a reactive Si--H bond; and
- (e) reacting said reactive Si--H bond with an organic compound including an unsaturated carbon-carbon bond selected from the group consisting of olefinic and acetylenic bonds to form said carbosilane dendrimer.
Parent Case Info
This application is a continuation-in-part of commonly-owned, co-pending U.S. patent application Ser. No. 08/611,495, filed Mar. 5, 1996 and a continuation-in-part of U.S. patent application Ser. No. 08/621/290, filed Mar. 22, 1996 both abandoned.
Government Interests
The United States Government has rights in this invention pursuant to Contract No. CHE 9221212 awarded by the National Science Foundation.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
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A 0 230 707 |
Aug 1987 |
EPX |
Continuation in Parts (2)
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611495 |
Mar 1996 |
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621290 |
Mar 1996 |
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