Claims
- 1. A superlattice contact structure for light emitting devices, comprising a plurality of contiguous p-type Group III nitride layers selected from the group consisting of gallium nitride, indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1, wherein at least two of said p-type Group III nitride layers differ in composition.
- 2. A superlattice contact structure according to claim 1, wherein said contiguous p-type Group III nitride layers include dopants having low activation energies to thereby increase the conductivity of the superlattice contact structure.
- 3. A superlattice contact structure according to claim 1, wherein said contiguous p-type Group III nitride layers include dopants having low activation energies to thereby increase the injection efficiency of holes within each said p-type contiguous Group III nitride layer.
- 4. A superlattice contact structure according to claim 1, wherein at least one of the contiguous p-type Group III nitride layers is selected from the group consisting of indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0≦x≦1.
- 5. A superlattice contact structure according to claim 1, wherein:
said contiguous p-type Group III nitride layers are selected from the group consisting of gallium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1; and at least one contiguous p-type Group III nitride layer is selected from the group consisting of AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1 .
- 6. A superlattice contact structure according to claim 1, wherein said superlattice is formed from alternating layers of two different p-type Group III nitride layers selected from the group consisting of gallium nitride, indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1.
- 7. A superlattice contact structure according to claim 1, wherein said superlattice is formed from alternating layers of two different p-type Group III nitride layers selected from the group consisting of gallium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1.
- 8. A light emitting device that can emit in the red to ultraviolet portion of the electromagnetic spectrum, said light emitting device comprising the superlattice contact structure according to claim 1.
- 9. A light emitting device according to claim 8, further comprising an active region and an ohmic contact, said superlattice contact structure being positioned between said active region and said ohmic contact.
- 10. A light emitting device according to claim 9, further comprising a cladding layer, said cladding layer being positioned between said active region and said superlattice contact structure.
- 11. A superlattice contact structure for light emitting devices, comprising:
a first p-type Group III nitride contact layer selected from the group consisting of indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1; and a second p-type Group III nitride contact layer that is adjacent to said first p-type Group III nitride contact layer and that has a composition that is different from said first p-type Group III nitride contact layer, said second p-type Group III nitride contact layer being selected from the group consisting of gallium nitride, indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1.
- 12. A superlattice contact structure according to Claim 11, wherein:
said first p-type Group III nitride contact layer is selected from the group consisting of AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1; and said second p-type Group III nitride contact layer is selected from the group consisting of gallium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1.
- 13. A superlattice contact structure according to claim 11, further comprising a plurality of contiguous p-type Group III nitride layers selected from the group consisting of gallium nitride, indium nitride, AlxIn1-xN, where 0<x<1, and InxGa1-xN, where 0<x<1.
- 14. A light emitting device that can emit in the red to ultraviolet portion of the electromagnetic spectrum, said light emitting device comprising the superlattice contact structure according to claim 11.
- 15. A light emitting device according to claim 14, further comprising an active region and an ohmic contact, said superlattice contact structure being positioned between said active region and said ohmic contact.
- 16. A light emitting device according to claim 15, further comprising a cladding layer, said cladding layer being positioned between said active region and said superlattice contact structure.
- 17. A contact structure for light emitting devices, comprising a p-type Group III nitride layer selected from the group consisting of indium nitride, AlxIn1-xN, where 0<x<1 and InxGa1-xN, where 0<x<1.
- 18. A light emitting device that can emit in the red to ultraviolet portion of the electromagnetic spectrum, said light emitting device comprising the contact structure according to claim 17.
- 19. A light emitting device according to claim 18, further comprising an active region and an ohmic contact, said contact structure being positioned between said active region and said ohmic contact.
- 20. A light emitting device according to claim 19, further comprising a cladding layer, said cladding layer being positioned between said active region and said contact structure.
RELATED APPLICATIONS
[0001] This application incorporates entirely by reference co-pending and commonly-assigned applications Ser. No. 09/706,057 (Group III Nitride Light Emitting Devices with Gallium-Free Layers), Ser. No. 09/760,635 (Group III Nitride LED with Undoped Active Layer and Undoped Cladding Layer), and Ser. No. ______ (Group III Nitride LED with Silicon Carbide Cladding Layer.