"High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures", by S. Nakamura et al., Jpn. J. Appl. Phys. vol. 34 (1995) pp. L797-L799, part 2, No. 7A, Jul. 1, 1995. |
"Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes" by S. Nakamura et al., Appl. Phys. Lett. 64 (13) Mar. 28, 1994, pp. 1687-1689. |
"In.sub.x Ga.sub.(1-x) N/In.sub.y Ga.sub.(1-y) N superlattices grown on GaN films" by S. Nakamura et al., J. Appl. Phys. 74(6) Sep. 15, 1993 pp. 3911-3915. |
"Room-temperature violet stimulated emission from optically pumped ALGaN/GaLnN double heterostructure", by H. Amano et al., Appl. Phys. Lett. 64 (11) Mar. 14, 1994 pp. 1377-1379. |
"Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes", by S. Nakamura et al., Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1332-L1335, Part 2, No. 10B, Oct. 15, 1995. |
"InGaN-Based Multi-Quantum Well-Structure Laser Diodes" by S. Nakamura et al., Jpn. J. Appl. Phys. vol. 35 (1996) pp. L74-L76 Part 2, No. 1B, Jan. 15, 1996. |