NSF Award
9461831
Pd-LD, Inc., proposes to grow wide band gap materials such as AIN, GAN and InN by a new epitaxial growth method based on a combination of metal organic chemical vapor deposition (MOCVD) and a hydride-vapor phase epitaxy, which was recently demonstrated. The researchers expect to grow nitrides at lower temperatures and this should decrease nitrogen vacancy concentration and facilitate dopant incorporation. They expect lower carbon incorporation because organic species do not participate directly in the deposition reaction. The reactant species are group III chlorides, which are highly mobile on growth surfaces; this should lead to better morphology. In the Phase II Pd-LD, Inc., plans to grow AlGaN and InGaN alloys and AlN/GaN and InN/GaN superlattices. Also, blue emitting devices are planned. In this work, they are cooperating with Prof. T. Anderson from the University of Florida, Gainsville, Florida.
