HARDWARE COMMAND TRAINING FOR MEMORY USING READ COMMANDS

Abstract

A method of training command signals for a memory module. The method includes programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle. The method then programs a programmable delay line of the column access strobe with a delay value and performs initialization of the memory module. A read command is then sent to the memory module. A number of data strobe signals sent by the memory module in response to the read command are counted. A determination is made whether the memory module is in a pass state or an error state based on a result of the counting.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to patent applications: “HARDWARE COMMAND TRAINING FOR MEMORY USING WRITE LEVELING MECHANISM,” concurrently filed with this application, with attorney docket number NVID-P-SC-10-0133-US1; “HARDWARE CHIP SELECT TRAINING FOR MEMORY USING WRITE LEVELING MECHANISM,” concurrently filed with this application, with attorney docket number NVID-P-SC-10-0135-US1; “MULTI-DIMENSIONAL HARDWARE DATA TRAINING BETWEEN MEMORY CONTROLLER AND MEMORY,” concurrently filed with this application, with attorney docket number NVID-P-SC-10-0137-US1; “METHOD AND SYSTEM FOR CHANGING BUS DIRECTION IN DDR MEMORY SYSTEMS,” concurrently filed with this application, with attorney docket number NVID-P-SC-10-0127-US1; and “HARDWARE CHIP SELECT TRAINING FOR MEMORY USING READ COMMANDS,” concurrently filed with this application, with attorney docket number NVID-P-SC-10-0134-US1, which are all herein incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

In memory qualification and validation, proper timing between a memory controller and DRAM chips is established for operation. The memory controller ensures that command signals meet setup and hold time tolerances at the DRAM chip. Current methods to train command signals are achieved by the cumbersome method of extracting trace length and delays of command signals and clock signals for each and every board type using various printed circuit board trace length extraction tools. With the help of a software algorithm, the delays are analyzed and compensated for.

The current methodology is error prone as it involves interaction of various tools, software and manual interpretation of results. Further, it is time consuming as all the tools need to be set up and loaded with the proper constraints and the process must be repeated for every possible board type and every possible memory configuration. Finally, the methodology is not ideal because as the frequency of DRAM increases, the available command signal and clock eye width decreases making it increasingly difficult to obtain a common skew compensation across the entire silicon process range.

BRIEF SUMMARY OF THE INVENTION

Accordingly, a need exists for a method and system of automatic hardware based memory controller command signal training. Embodiments of the present invention disclose a method and system for automatically training the skew between command signals and clock signals using read commands for memory devices, e.g. DDR3 compatible devices in one embodiment.

More specifically, embodiments of the present invention are directed towards a method of training command signals for a memory module. The method includes programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle. The method then programs a programmable delay line of the column access strobe with a delay value and performs initialization of the memory module. A read command is then sent to the memory module. A number of data strobe signals sent by the memory module in response to the read command are counted. A determination is made whether the memory module is in a pass state or an error state based on a result of the counting.

In another embodiment, the present invention is drawn to a computer readable storage medium having stored thereon, computer executable instructions that, if executed by a computer system cause the computer system to perform a method of training command signals for a memory module. The method includes programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle. The method then programs a programmable delay line of the column access strobe with a delay value and performs initialization of the memory module. A read command is then sent to the memory module. A number of data strobe signals sent by the memory module in response to the read command are counted. A determination is made whether the memory module is in a pass state or an error state based on a result of the counting.

In yet another embodiment, the present invention is drawn to a system. The system comprises a processor coupled to a computer readable storage media using a bus and executing computer readable code which causes the computer system to perform a method of training command signals for a memory module. The method includes programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle. The method then programs a programmable delay line of the column access strobe with a delay value and performs initialization of the memory module. A read command is then sent to the memory module. A number of data strobe signals sent by the memory module in response to the read command are counted. A determination is made whether the memory module is in a pass state or an error state based on a result of the counting.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the present invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements.

FIG. 1 shows an exemplary computer system, in accordance with one embodiment of the present invention.

FIG. 2 shows an exemplary memory controller comprising a plurality of signal outputs, in accordance with one embodiment of the present invention.

FIG. 3 shows an exemplary memory module comprising a plurality of signal inputs and a plurality of signal outputs, in accordance with one embodiment of the present invention.

FIG. 4 depicts a flowchart of an exemplary computer controlled process of training command signals for a memory module, in accordance with one embodiment of the present invention.

FIG. 5 depicts a plurality of delay values and corresponding results stored within memory in a tabular format, in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. While the present invention will be discussed in conjunction with the following embodiments, it will be understood that they are not intended to limit the present invention to these embodiments alone. On the contrary, the present invention is intended to cover alternatives, modifications, and equivalents which may be included with the spirit and scope of the present invention as defined by the appended claims. Furthermore, in the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, embodiments of the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present invention.

FIG. 1 shows an exemplary computer system 100 in accordance with one embodiment of the present invention. Computer system 100 depicts the components in accordance with embodiments of the present invention providing the execution platform for certain hardware-based and software-based functionality, in particular, computer graphics rendering and display capability. In general, computer system 100 comprises a system board 106 including at least one central processing unit (CPU) 102 and a system memory 104. The CPU 102 can be coupled to the system memory 104 via a memory controller 120 or can be directly coupled to the system memory 104 via a memory controller internal (not shown) to the CPU 102. Memory controller 120 may also include a counter (not shown). In an embodiment, system memory 104 may be DDR3 SDRAM.

Computer system 100 also comprises a graphics subsystem 114 including at least one graphics processor unit (GPU) 110. For example, the graphics subsystem 114 may be included on a graphics card. The graphics subsystem 114 may be coupled to a display 116. One or more additional GPU(s) 110 can optionally be coupled to computer system 100 to further increase its computational power. The GPU(s) 110 may be coupled to the CPU 102 and the system memory 104 via a communication bus 108. The GPU 110 can be implemented as a discrete component, a discrete graphics card designed to couple to the computer system 100 via a connector (e.g., AGP slot, PCI-Express slot, etc.), a discrete integrated circuit die (e.g., mounted directly on a motherboard), or as an integrated GPU included within the integrated circuit die of a computer system chipset component (not shown). Additionally, memory devices 112 may be coupled with the GPU 110 for high bandwidth graphics data storage, e.g., the frame buffer. In an embodiment, the memory devices 112 may be dynamic random-access memory. A power source unit (PSU) 118 may provide electrical power to the system board 106 and graphics subsystem 114.

The CPU 102 and the GPU 110 can also be integrated into a single integrated circuit die and the CPU and GPU may share various resources, such as instruction logic, buffers, functional units and so on, or separate resources may be provided for graphics and general-purpose operations. The GPU may further be integrated into a core logic component. Accordingly, any or all the circuits and/or functionality described herein as being associated with the GPU 110 can also be implemented in, and performed by, a suitably equipped CPU 102. Additionally, while embodiments herein may make reference to a GPU, it should be noted that the described circuits and/or functionality can also be implemented and other types of processors (e.g., general purpose or other special-purpose coprocessors) or within a CPU.

System 100 can be implemented as, for example, a desktop computer system or server computer system having a powerful general-purpose CPU 102 coupled to a dedicated graphics rendering GPU 110. In such an embodiment, components can be included that add peripheral buses, specialized audio/video components, IO devices, and the like. Similarly, system 100 can be implemented as a portable device (e.g., cellphone, PDA, etc.), direct broadcast satellite (DBS)/terrestrial set-top box or a set-top video game console device such as, for example, the Xbox®, available from Microsoft Corporation of Redmond, Wash., or the PlayStation3®, available from Sony Computer Entertainment Corporation of Tokyo, Japan. System 100 can also be implemented as a “system on a chip”, where the electronics (e.g., the components 102, 104, 110, 112, and the like) of a computing device are wholly contained within a single integrated circuit die. Examples include a hand-held instrument with a display, a car navigation system, a portable entertainment system, and the like.

FIG. 2 shows an exemplary memory controller 120 comprising a plurality of signal outputs, in accordance with one embodiment of the present invention. Memory controller 120 is a digital circuit in one embodiment operable to manage the flow of data going to and from memory module 104 (FIG. 1). Memory controller 120 includes logic necessary to read and write to memory module 104 (FIG. 1) and to refresh memory module 104 (FIG. 1) by sending current through the entire device.

In one example, memory controller 120 includes output signals consistent with the JEDEC DDR3 SDRAM Specification. The output signals are sent to memory module 104 (FIG. 1). These output signals include RESET# 222, CK/CK# 224, CKE 226, CS# 228, RAS# 230, CAS# 239, WE# 241, A-BA 232 and ODT 234. RESET# 222 is an active low asynchronous reset operable to reset memory module 104 (FIG. 1). CK/CK# 224 is a differential clock signal operable to clock memory module 104 (FIG. 1). CKE 226 is a clock enable signal operable for instructing memory module 104 (FIG. 1) to acknowledge clock transitions. CS# 228 is a chip select signal operable for rank (not shown) selection on memory module 104 (FIG. 1). RAS# 230, CAS# 239 and WE# 241 are command outputs to memory module 104 (FIG. 1) that define the command being entered. RAS# 230 is a row access strobe to retrieve data from the memory module 104 (FIG. 1). CAS# 239 is a column access strobe to retrieve data from the memory module 104 (FIG. 1). WE# 241 is a write enable signal operable for instructing memory module 104 (FIG. 1) to acknowledge write instructions. A-BA 232 are address outputs and bank address outputs respectively. The address outputs provide the row address for active commands and column address for read/write commands to select one location out of the memory array in a respective bank (not shown) of memory module 104 (FIG. 1). Address outputs also provide the op-code during Mode Register Set (MRS) commands to memory module 104 (FIG. 1). The bank address outputs define to which bank (not shown) of memory module 104 (FIG. 1) an active read, write or precharge command is being applied. Bank address also determines which mode register of memory module 104 (FIG. 1) is to be accessed during a MRS cycle. ODT 234 is on die termination output and enables termination resistance internal to the memory module 104 (FIG. 1).

Memory controller 120 also includes bidirectional signals DQS-DQS# 236 and DQ 238 (both described in FIG. 3).

It is appreciated that embodiments of the present invention enable the hardware within computer system 100 (FIG. 1) to automatically train the skew between (CMD) signals and clock 224 signals using read commands for DDR3 devices. CMD signals include A 232, BA 239, RAS# 230, CAS# 239 and WE# 241. Training of the command signals is accomplished by training the skew of CAS# 239 and clock 224 signal using read commands for DDR3 devices. The JEDEC DDR3 SDRAM Specification supports read commands to allow the memory controller 120 to access data stored in the memory module 104 (FIG. 1). However, the JEDEC DDR3 SDRAM Specification does not provide for any method to train the command signals (A 232, BA 239, RAS# 230, CAS# 239 and WE# 241) vs. clock 224 delay. The present invention makes use of the read command to train the command signals vs. clock 224 delay.

Advantageously, embodiments of the present invention provide for a method to train command signals on memory controller 120. Often times, there may be a high variance in the skew between the command signals and the clock signal 224. This variance may be attributed to silicon speed grade, packaging, board trace length, or variable DIMM fly by delay due to loading. Since the memory module 104 (FIG. 1) is synchronous, the memory controller 120 must assure that the command signals meet setup and hold time requirements at the memory module 104 (FIG. 1). In an embodiment, the chip select signal 228 may be associated with a programmable delay line (not shown) operable to delay CAS# 239 (the particular command signal used for training).

Command signal training is typically a part of memory qualification and validation procedures. One advantage to using the read command to train the command signals versus clock 224 delay is that the memory module 104 (FIG. 1) need not have write functionality active prior to training. Further, the read data need not be accurate and garbage or unknown data will still allow for proper training. The training can be accomplished as soon as memory module 104 comes out of ROMSTRAP.

Memory controller 120 supports four features consistent with the training. First, memory controller 120 supports adjustable delay settings on command (A 232, BA 239, RAS# 230, CAS# 239 and WE# 241), clock 224, and control (not shown) signals.

Second, memory controller 120 also supports a special mode wherein all command signals are driven for a programmable time period rather than only one clock cycle. This mode is used for performing memory module initialization.

Third, memory controller 120 supports a special wherein all command signals except CAS# 239 are driven for a programmable time period instead of only one clock cycle and driving CAS# 239 for exactly one clock cycle. This mode is used for sending read commands during the command signal training. Since only CAS# 239 is being trained, this mode ensures that all the remaining command signal bits are sampled correctly at the memory module 104 as they are practically kept static by driving the command signal bits statically for a significant period of time.

Fourth, memory controller 120 comprises a counter circuit 240 that counts the number of DQS-DQS# 236 signal strobes received by the memory module 104 (FIG. 1) in response to a read command.

Memory controller 120 also supports a mechanism to reset the memory module 104 (FIG. 1) via the RESET# signal 222. During command signal training, it is possible to place the memory module 104 in a bad state if the setup and hold times of the command signals is violated. In an embodiment, the chip memory module 104 (FIG. 1) is reset via the RESET# signal 222 after every command signal training iteration.

FIG. 3 shows an exemplary memory module 104 comprising a plurality of signal inputs and a plurality of signal outputs, in accordance with one embodiment of the present invention. In an embodiment, memory module 104 is a double data rate type three synchronous dynamic random access memory (DDR3 SDRAM). Memory module 104 receives the same signals output from memory controller 120 (FIG. 2) as input signals. These signals include RESET# 222, CK/CK# 224, CKE 226, CS# 228, RAS# 230, CAS# 239, WE# 241, A-BA 232 and ODT 234, all described above in FIG. 2. In addition, memory module 104 includes bidirectional signals DQS-DQS# 236 and DQ-DM# 238.

DQS-DQS# 236 is the data strobe signal that is output with read data and input with write data. The data strobe is edge-aligned with read data and centered with write data. DQ 238 is the bi-directional data bus wherein data is transmitted over the respective bus.

FIG. 4 depicts a flowchart of an exemplary computer controlled process of training command signals for a memory module, in accordance with one embodiment of the present invention. The computer-controlled process of flowchart 400 may be implemented on the system of FIG. 1. In block 402, a memory controller is programmed into a mode wherein a column access strobe is active for a single clock cycle. For example, in FIG. 2, the memory controller is programmed into a mode, via the RAS, CAS, and WE signals, wherein CAS# is active for a single clock cycle. As a result, all the remaining command signal bits are sampled correctly at the memory module as they are practically kept static by driving the command bits statically for a significant period of time.

In block 404, a programmable delay line of the column access strobe (CAS#) signal is programmed with a delay value. For example, in FIG. 2, a programmable delay line associated with the CAS# signal of the memory controller is programmed with a delay value. In an embodiment, the delay line may be reprogrammed with a different delay value in subsequent iterations of the command signal training. In an embodiment, all command signals except for CAS# are driven for a programmable time period and CAS# is driven for a single clock cycle.

In block 406, the memory module is initialized. For example, in FIG. 3, the memory module is initialized. Initialization of the memory module is performed via the memory controller. In an embodiment, the memory module may be compatible with DDR3 SDRAM.

In block 408, a read command is sent to the memory module. For example, in FIG. 3, the controller sends a read command to the memory module via the RAS#, CAS#, and WE# signals.

In block 410, a number of data strobe signals sent by the memory module in response to the read command are counted. For example, in FIG. 3, the number of data strobe signals sent via the DQS-DQS# signal by the memory module in response to the read command are counted. The number of data strobe signals are counted via digital counter circuit internal to the memory controller (FIG. 2). During the read command and other steps of the command signal training, the frequency of the memory controller and the frequency of the command signals remain constant.

In block 412, it is determined whether the memory module is in a pass state or an error state based on a result of the counting. The memory module is determined to be in a pass state when a count of the data strobe signals by the memory module is equal to a burst length of the read command. The memory module is determined to be in an error state when the count of the data strobe signals by the memory module is equal to zero. The burst length is equal to 8 according to the JEDEC DDR3 Specification.

In an embodiment, the pass/error state of the memory module is recorded. If the memory module is determined to be in an error state, the memory module is reset via the #RESET signal. The programmable delay line is then reprogrammed with a different delay value and the command signal training process is repeated. Each subsequent pass/error state of the memory module is recorded and a range of values for where the memory module is in a pass state is compiled. These range of values represent the acceptable command signal timing values with respect to the clock to ensure proper function of the memory module.

FIG. 5 depicts a plurality of delay values and corresponding results stored within memory in a tabular format, in accordance with one embodiment of the present invention. In an embodiment, table 500 may be stored within memory 104 (FIG. 1). Table 500 stores each tested command signal delay value 502 and its corresponding pass/error state result 504 for every iteration of the command signal training. Each subsequent pass/error state 504 of the memory module is recorded and a range of delay values 502 for where the memory module is in a pass state is compiled. These range of values represent the acceptable command signal timing values with respect to the clock to ensure proper function of the memory module.

In the foregoing specification, embodiments of the invention have been described with reference to numerous specific details that may vary from implementation to implementation. Thus, the sole and exclusive indicator of what is, and is intended by the applicants to be, the invention is the set of claims that issue from this application, in the specific form in which such claims issue, including any subsequent correction. Hence, no limitation, element, property, feature, advantage, or attribute that is not expressly recited in a claim should limit the scope of such claim in any way. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.

The foregoing description, for purpose of explanation, has been described with reference to specific embodiments. However, the illustrative discussions above are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations are possible in view of the above teachings.

Claims

1. A method of training a command signal for a memory module, said method comprising: a) programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle;b) programming a programmable delay line of said column access strobe with a delay value;c) initializing said memory module;d) sending a read command to said memory module;e) counting a number of data strobe signals sent by said memory module in response to said read command; andf) determining whether said memory module is in a pass state or an error state based on a result of said counting.

2. The method of claim 1 further comprising: resetting said memory module upon a determination of said error state;reprogramming said programmable delay line with another delay value; andrepeating said d)-f).

3. The method of claim 1 further comprising determining a range of delay values that result in said memory module determined to be in said pass state.

4. The method of claim 1 further comprising maintaining a frequency of said memory controller constant and maintaining a frequency of said column address strobe constant.

5. The method of claim 1 wherein a plurality of bits of a command signal are active for a programmable time period.

6. The method of claim 1 wherein said determining comprises: determining that said memory module is in said pass state when a count of said data strobe signals by said memory module is equal to a burst length of said read command; anddetermining that said memory module is in said error state when said count is equal to zero.

7. The method of claim 1 wherein said counting is accomplished using a digital counter coupled to said memory module.

8. A computer readable storage medium having stored thereon, computer executable instructions that, if executed by a computer system cause the computer system to perform a method of training a command signal for a memory module, said method comprising: a) programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle;b) programming a programmable delay line of said column access strobe with a delay value;c) initializing said memory module;d) sending a read command to said memory module;e) counting a number of data strobe signals sent by said memory module in response to said read command; andf) determining whether said memory module is in a pass state or an error state based on a result of said counting.

9. The computer readable storage medium of claim 8, wherein said method further comprises: resetting said memory module upon a determination of said error state;reprogramming said programmable delay line with another delay value; andrepeating said d)-f).

10. The computer readable storage medium of claim 8 wherein said method further comprises determining a range of delay values that result in said memory module determined to be in said pass state.

11. The computer readable storage medium of claim 8 wherein said method further comprises maintaining a frequency of said memory controller constant and maintaining a frequency of said column address strobe constant.

12. The computer readable storage medium of claim 8 wherein a plurality of bits of a command signal are active for a programmable time period.

13. The computer readable storage medium of claim 8 wherein said determining comprises: determining that said memory module is in said pass state when a count of said data strobe signals by said memory module is equal to a burst length of said read command; anddetermining that said memory module is in said error state when said count is equal to zero.

14. The computer readable storage medium of claim 8 wherein said counting is accomplished using a digital counter coupled to said memory module.

15. A system comprising: a processor coupled to a computer readable storage media using a bus and executing computer readable code which causes the computer system to perform a method of training a command signal for a memory module, said method comprising:a) programming a memory controller into a mode wherein a column access strobe is active for a single clock cycle;b) programming a programmable delay line of said column access strobe with a delay value;c) initializing said memory module;d) sending a read command to said memory module;e) counting a number of data strobe signals sent by said memory module in response to said read command; andf) determining whether said memory module is in a pass state or an error state based on a result of said counting.

16. The system of claim 15, wherein said method further comprises: resetting said memory module upon a determination of said error state;reprogramming said programmable delay line with another delay value; andrepeating said d)-f).

17. The system of claim 15 wherein said method further comprises determining a range of delay values that result in said memory module determined to be in said pass state.

18. The system of claim 15 wherein said method further comprises maintaining a frequency of said memory controller constant and maintaining a frequency of said column address strobe constant.

19. The system of claim 15 wherein said determining comprises: determining that said memory module is in said pass state when a count of said data strobe signals by said memory module is equal to a burst length of said read command; anddetermining that said memory module is in said error state when said count is equal to zero.

20. The system of claim 15 wherein: said counting is accomplished using a digital counter coupled to said memory module; andwherein a plurality of bits of a command signal are active for a programmable time period.