Claims
- 1. A heat exchanger including a heat exchanger component having a surface layer portion in which a fluoride layer is formed.
- 2. The heat exchanger as recited in claim 1, wherein a thickness of said fluoride layer falls within the range of from 2 nm to 10 μm.
- 3. The heat exchanger as recited in claim 1, wherein said heat exchanger is a fin-plate type heat exchanger, and wherein said component is at least one of a fin and a plate.
- 4. The heat exchanger as recited in claim 1, wherein said heat exchanger uses water as heat medium.
- 5. The heat exchanger as recited in claim 1, wherein said beat exchanger is used under a water environment, a vapor environment, or a fuel gas environment of a fuel cell.
- 6. The heat exchanger as recited in claim 1, wherein a layer containing catalyst is formed on a surface of said fluoride layer.
- 7. The heat exchanger as recited in claim 1, wherein said heat exchanger is for use in a fuel cell.
- 8. The heat exchanger as recited in claim 1, wherein said heat exchanger is a fin-plate type heat exchanger for a fuel tell to be used under a fuel gas environment of a fuel cell, and wherein a layer containing catalyst for accelerating a reaction of carbon monoxide contained in the fuel gas and oxygen.
- 9. The heat exchanger as recited in claim 1, wherein a substrate of said component is substantially made of aluminum or its alloy.
- 10. The heat exchanger as recited in claim 1, wherein said fluoride layer is formed on a surface of a substrate of said component.
- 11. The heat exchanger as recited in claim 10, wherein said fluoride layer is substantially made of fluoride generated by performing fluorination processing of said surface of said substrate.
- 12. The heat exchanger as recited in claim 1, wherein said fluoride layer is formed on a surface of an intermediate layer formed on a surface of a substrate of said component.
- 13. The heat exchanger as recited in claim 12, wherein said fluoride layer is substantially made of fluoride generated by performing fluorination processing of said surface of said intermediate layer.
- 14. The heat exchanger as recited in claim 12 or 13, wherein said intermediate layer includes a layer which is substantially made of oxide generated by performing forcible oxidation of said surface of said substrate.
- 15. The heat exchanger as recited in claim 12 or 13, wherein said intermediate layer includes an anodized oxide layer formed by anodizing said surface of said substrate.
- 16. The heat exchanger as recited in claim 1, wherein said fluoride layer is formed on a surface of an anodized oxide layer formed by anodizing a surface of a substrate of said component and substantially made of fluoride generated by performing fluorination processing of said surface of said anodized oxide layer.
- 17. The heat exchanger as recited in claim 1, wherein said fluoride layer is formed on a surface of a plated layer containing nickel formed on a surface of a substrate of said component and substantially made of fluoride generated by performing fluorination processing of said surface of said plated layer.
- 18. The heat exchanger as recited in claim 17, wherein said plated layer is substantially made of electroless nickel plating.
- 19. The heat exchanger as recited in claim 17, wherein said plated layer is substantially made of electroless nickel-phosphorus alloy plated layer.
- 20. The heat exchanger as recited in claim 1, wherein said fluoride layer is formed on a surface of a plated layer constituting an intermediate layer including an anodized oxide layer formed by anodizing a surface of a substrate of said component and said plated layer formed on a surface of said anodized oxide layer and containing nickel, and substantially made of fluoride generated by performing fluorination processing of said surface of said plated layer.
- 21. The heat exchanger as recited in claim 20, wherein said plated layer is substantially made of electroless nickel plating.
- 22. The heal exchanger as recited in claim 20, wherein said plated layer is substantially made of electroless nickel-phosphorus alloy plating.
- 23. A method of fluorinating a heat exchanger or its component, comprising:
heating a heat exchanger or its component in an atmosphere containing a fluorination processing gas to thereby form a fluoride layer in a surface layer portion of said heat exchanger or its component.
- 24. The method of fluorinating a heat exchanger or its component as recited in claim 23, wherein said fluorination processing gas is at least one gas selected from the group consisting of a fluorine gas, a chlorine trifluoride gas and a nitrogen fluoride gas, wherein an inert gas is used as a base gas of said atmosphere, and wherein concentration of said fluorine gas or that of said fluoride gas is set so as to fall within the range of from 5 to 80 mass %.
- 25. The method of fluorinating a heat exchanger or its component as recited in claim 24, wherein said concentration of said fluorine gas or that of said fluoride gas is set so as to fall within the range of from 10 to 60 mass %.
- 26. The method of fluorinating a heat exchanger or its component as recited in claim 23, wherein said heating is performed under a heat processing condition that a holding temperature is 100° C. or more and a holding time is 5 hours or more.
- 27. A method of fluorinating a heat exchanger or its component, comprising:
implanting an ionized fluorine into at least a part of a surface of a heat exchanger or its component to thereby form a fluoride layer on a surface layer portion of said heat exchanger or its component.
- 28. A method of manufacturing a heat exchanger, comprising:
a heating step for heating a heat exchanger component in an atmosphere containing a fluorination processing gas; and a fixing step for fixing said component processed by said heating step to a predetermined position of a desired heat exchanger.
- 29. The method of manufacturing a heat exchanger as recited in claim 28, further comprising a catalyst containing layer forming step for forming a layer containing catalyst on a surface of said component processed by said heating step.
- 30. A method of manufacturing a heat exchanger, comprising:
a fluorine implanting step for implanting an ionized fluorine into at least a part of a surface of a heat exchanger component; and a fixing step for fixing said component processed by said fluorine implanting step to a predetermined position of a desired heat exchanger.
- 31. The method of manufacturing a heat exchanger according to claim 30, further comprising a catalyst containing layer forming step for forming a layer containing catalyst on a portion of said surface of said component processed by said fluorine implanting stop to which said fluorine is implanted.
- 32. A method of manufacturing a heat exchanger, comprising:
a heating step for heating a heat exchanger assembly in an atmosphere containing a fluorination processing gas, wherein said heat exchanger assembly is formed by assembling a plurality of heat exchanger components and integrally brazing said plurality of heat exchanger components in an assembled state.
- 33. The method of manufacturing a heat exchanger as recited in claim 32, further comprising a catalyst containing layer forming step for forming a layer containing catalyst on a surface of said assembly processed by said heating step.
- 34. A method of manufacturing a heat exchanger, comprising:
a fluorine implanting step for implanting an ionized fluorine into at least a part of a surface of a heat exchanger assembly, wherein said heat exchanger assembly is formed by assembling a plurality of heat exchanger components and integrally brazing said plurality of heat exchanger components in an assembled state.
- 35. The method of manufacturing a heat exchanger as recited in claim 34, further comprising a catalyst containing layer forming step for forming a layer containing catalyst on a portion of said surface of said assembly processed by said fluorine implanting step to which said fluorine is implanted.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-328184 |
Oct 2001 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] Priority is claimed to Japanese Patent Application No. 2001-328184, filed on Oct. 25, 2001 and U.S. Provisional Patent Application No. 60/341,249, filed on Dec. 20, 2001, the disclosure of which are incorporated by reference in their entireties.
[0002] This application is an application filed under 35 U.S.C. §111 (a) claiming the benefit pursuant to 35 U.S.C. §119(e) (1) of the filing date of U.S. Provisional Application No. 60/341, 249 filed on Dec. 20, 2001 pursuant to 35 U.S.C. §111(b).
Provisional Applications (1)
|
Number |
Date |
Country |
|
60341249 |
Dec 2001 |
US |