Claims
- 1. A resistive heating device comprising:
- a cellular substrate having inlet and outlet end faces, and a matrix of cell walls defining a plurality of cells or passageways extending longitudinally and mutually parallel therethrough between the inlet and outlet end faces;
- a continuous layer of electrically conductive material formed on the cell walls on the inlet end portion of the substrate such that the layer of conductive material is an integral part of the substrate;
- catalyst formed on the substrate; and
- an activating device selected from the group consisting of an electrical switch and an electromagnetic energy generator.
- 2. The device of claim 1, further comprising an electrical lead contacted to the layer of conductive material, and means for connecting the leads to an electric power source.
- 3. The device of claim 2, wherein the leads are formed of electrically conducting material selected from the group consisting of platinum, copper, silver, palladium, rhodium and their alloys.
- 4. The device of claim 2, wherein the leads are contacted to the layer of conductive material by means of a sintered electrically conductive paste.
- 5. The device of claim 4, further comprising slots formed on the inlet end portion of the substrate.
- 6. The device of claim 5, wherein the leads are at least partially imbedded in the slots.
- 7. The device of claim 6, wherein the layer of conductive material is formed over the electrically conductive paste.
- 8. The device of claim 4, wherein the electrically conductive paste comprises glass frit and metal powders.
- 9. The device of claim 8, wherein the metal powder is selected from the group consisting of platinum, silver, palladium, rhodium and copper.
- 10. The device of claim 8, wherein the glass frit is a low expansion glass selected from the group consisting of (1) low expansion zinc petalite-beta quartz glass-ceramics which have compositions in the ZnO--Al.sub.2 O.sub.3 --SiO.sub.2 field, (2) sinterable powdered glasses comprising MgO, Al.sub.2 O.sub.3, SiO.sub.2 and at least one modifying oxide selected from the group consisting of BaO, PbO, SrO and CaO and which are thermally crystallizable at sintering temperatures to yield highly crystalline, low expansion, thermally stable glass-ceramics, and (3) lead titanate-containing crystallizable sealing glass consisting essentially in weight percent of from 60 to 80% of PbO, up to 20% of at least one divalent metal oxide selected from ZnO and BaO such that the total of divalent oxides and PbO is from 60 to 80%, 5 to 18% TiO.sub.2, at least 1% B.sub.2 O.sub.3 and at least 5% SiO.sub.2, the total of B.sub.2 O.sub.3 and SiO.sub.2 being from 10 to 20%.
- 11. The device of claim 1, further comprising a susceptor contacted to the inlet end portion of the substrate.
- 12. The device of claim 1, wherein the substrate is electrically conductive.
- 13. The device of claim 12, further comprising a layer of non-conductive passivating layer formed between the substrate and the layer of electrically conductive material.
- 14. The device of claim 1, wherein the substrate is formed of electrically insulating material.
- 15. The device of claim 14, wherein the cell wall thickness is in the range of 0.11 to 0.20 mm.
- 16. The device of claim 15, wherein the thickness of the conductive layer is in the range of 0.05-4.5 microns.
- 17. The device of claim 16, wherein all cells are open at both end faces of the substrate and the combined thickness of the cell walls and the layer of conductive material is such that the open frontal area of the substrate is in the range of 50-80%.
- 18. The device of claim 2, wherein the leads are connected to an electric power source capable of generating 1 to 27 volts of applied voltage.
- 19. The device of claim 1, wherein the catalyst is a catalytically active washcoat.
- 20. The device of claim 1, wherein the catalyst is further formed on the layer of electrically conductive material.
- 21. The device of claim 1, wherein the electrically conductive material is selected from the group consisting of platinum, rhodium, and mixtures of these.
- 22. The device of claim 21, wherein the cellular substrate is cordierite having wall thickness in the range of 125 to 175 microns, and the layer of electrically conductive material is applied to a thickness in the range of 0.05 to 8 microns.
- 23. The device of claim 22, wherein the layer of electrically conductive material is applied to a thickness in the range of 0.5 to 5 microns.
CROSS REFERENCE TO RELATED APPLICATION
This is a continuation of application Ser. No. 07/893,256, filed Jun. 3, 1992, now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (4)
Number |
Date |
Country |
0483708A1 |
May 1992 |
EPX |
0485179A3 |
May 1992 |
EPX |
4017360A1 |
Dec 1991 |
DEX |
678020A5 |
Jul 1991 |
CHX |
Continuations (1)
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Number |
Date |
Country |
Parent |
893256 |
Jun 1992 |
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