Patent Grant
10480786
The present invention relates to a heater for use in, for example, a heater for ignition or flame detection in a combustion type in-vehicle heating device, a heater for ignition of various combustion appliances, such as an oil fan heater, a heater for a glow plug of an automobile engine, a heater for various sensors, such as an oxygen sensor, a heater for heating a measuring device, or the like. The present invention also relates to a glow plug having the heater described above.
The heater for use in a glow plug of an automobile engine or the like contains a resistor having a heat-generating portion, a lead, and an insulating base. Materials of the lead and the resistor are selected and shapes of the lead and the resistor are determined so that the resistance of the lead is smaller than the resistance of the resistor (for example, refer to PTL 1).
In recent years, such heaters tend to be used more frequently in a high-temperature environment than before. Therefore, there is a possibility that thermal stress generated in the heater exerts a larger effect than before during a heat cycle.
PTL 1: Japanese Unexamined Patent Application Publication No. 2002-334768
A heater of the present invention has an insulating base made of a ceramic, a resistor buried in the insulating base, and leads connected to end portions of the resistor, in which both the resistor and the leads contain electrical conductors and ceramic particles dispersed in the electrical conductors, and the insulating ceramic particles contained in the resistor are smaller than the insulating ceramic particles contained in the leads.
The present invention also relates to a glow plug having the heater with the configuration described above and a metal holding member which is electrically connected to the leads and holds the heater.
Hereinafter, an example of an embodiment of a heater 10 of the present invention is described in detail with reference to the drawings.
The heater 10 of this embodiment has an insulating base 1 made of a ceramic, a resistor 2 buried in the insulating base 1, and leads 3 connected to end portions of the resistor 2. Both the resistor 2 and the leads 3 contain electrical conductors 21 and 31 and insulating ceramic particles (hereinafter also referred to as ceramic particles) 22 and 32. The ceramic particles 22 contained in the resistor 2 are smaller than the ceramic particles 32 contained in the leads 3.
The insulating base 1 in the heater 10 of this embodiment has a rod shape, for example. The insulating base 1 covers a conductor line 6 (the resistor 2 and the leads 3). In other words, the conductor line 6 (resistor 2 and leads 3) is buried in the insulating base 1. Herein, the insulating base 1 is formed of a ceramic. Thus, the heat resistance of the insulating base 1 can be increased. As a result, the reliability of the heater 10 in a high-temperature environment improves. Specifically, examples of the ceramic used in the insulating base 1 include ceramics having electrical insulation properties, such as oxide ceramics, nitride ceramics, or carbide ceramics. In the heater 10 of this embodiment, the insulating base 1 contains a silicon nitride ceramic, which has good strength, toughness, insulation properties, and heat resistance. The silicon nitride ceramic can be obtained by the following method. For example, 3 to 12% by mass of a rare earth element oxide, such as Y2O3, Yb2O3, or Er2O3, as a sintering aid and 0.5 to 3% by mass of Al2O3 and SiO2 are mixed with silicon nitride as the main component. In this process, SiO2 is added in such a manner that the amount of the SiO2 contained in a sintered compact is 1.5 to 5% by mass. Then, the obtained mixture is molded into a predetermined shape. Thereafter, the resultant mixture is subjected to hot-press firing at 1650 to 1780° C., for example, so that a silicon nitride ceramic can be obtained.
In this embodiment, MoSi2, WSi2, or the like is dispersed in the insulating base 1 made of the silicon nitride ceramic. In this case, the coefficient of thermal expansion of the insulating base 1 made of the silicon nitride ceramic as the base material can be brought close to the coefficient of thermal expansion of the conductor line 6 containing Mo, W, or the like. Thus, the thermal stress generated between the insulating base 1 and the conductor line 6 can be reduced. As a result, the durability of the heater 10 can be increased.
The resistor 2 is buried in the insulating base 1. The resistor 2 has a heat-generating portion 20 which is a region that mainly generates heat. When the resistor 2 has a folded shape as illustrated in
The resistor 2 contains a metal, such as W, Mo, or Ti, or a carbide, nitride, or silicide of the metal as the main component. The main component serves as the electrical conductors 21 described above. The electrical conductors 21 may have a particle shape as illustrated in
In the heater 10 of this embodiment, the electrical conductors 21 of the resistor 2 contain tungsten carbide (WC). This is because a difference in the coefficient of thermal expansion between the silicon nitride ceramic constituting the insulating base 1 and the WC constituting the resistor 2 is small. WC is good as the material of the resistor 2 with respect to having high heat resistance. Furthermore, in the resistor 2, the WC is contained as the main component, and 20% by mass or more of silicon nitride is added to the WC in this embodiment. This silicon nitride constitutes the ceramic particles 22 described above. In the insulating base 1 made of the silicon nitride ceramic, the electrical conductors 21 serving as the resistor 2 have a coefficient of thermal expansion larger than that of the silicon nitride. Therefore, thermal stress is applied between the insulating base 1 and the resistor 2 during a heat cycle. Then, the coefficient of thermal expansion of the resistor 2 is brought close to the coefficient of thermal expansion of the insulating base 1 by adding the silicon nitride as the ceramic particles 22 into the resistor 2. Thus, the thermal stress generated between the insulating base 1 and the resistor 2 during temperature increase and temperature decrease of the heater 10 can be reduced.
Moreover, when the content of the silicon nitride contained in the resistor 2 is 40% by mass or less, variations in the resistance of the resistor 2 can be decreased, and therefore the resistance can be easily adjusted.
Accordingly, in the heater 10 of this embodiment, the content of the silicon nitride contained in the resistor 2 is 20 to 40% by mass. As an additive to be added to the resistor 2, 4 to 12% by mass of boron nitride can be added in place of the silicon nitride.
In the heater 10 of this embodiment, the thickness of the resistor 2 is 0.5 to 1.5 mm. The width of the resistor 2 is 0.3 to 1.3 mm. By setting the thickness and the width of the resistor 2 within these ranges, the resistance of the resistor 2 can be increased. This enables the resistor 2 to generate heat efficiently.
The leads 3 connected to the end portions of the resistor 2 contain a metal, such as W, Mo, or Ti, or a carbide, nitride, or silicide of the metal as the main component. The main component constitutes the electrical conductors 31 described above. For the leads 3, the same material as that of the resistor 2 can be used. In the heater 10 of this embodiment, the leads 3 contain WC as the electrical conductors 31. This is because a difference in the coefficient of thermal expansion between the silicon nitride ceramic constituting the insulating base 1 and the WC is small. Furthermore, in this embodiment, the leads 3 contain WC as the main component, and 15% by mass or more of silicon nitride is added to the WC. The silicon nitride constitutes the ceramic particles 32 described above. When the content of the silicon nitride in the leads 3 is further increased, the coefficient of thermal expansion of the leads 3 can be brought closer to the coefficient of thermal expansion of the insulating base 1. Thus, the thermal stress generated between the leads 3 and the insulating base 1 can be reduced. When the content of the silicon nitride is 40% by mass or less, variations in the resistance of the leads 3 can be decreased, and therefore the resistance can be easily adjusted. Therefore, in the heater 10 of this embodiment, the content of the silicon nitride contained in the leads 3 is 15 to 40% by mass.
In the heater 10 of this embodiment, the cross-sectional area in a direction vertical to the direction in which a current flows in the leads 3 is larger than the cross-sectional area in a direction vertical to the direction in which a current flows in the resistor 2. Specifically, the cross-sectional area of the leads 3 is about 2 to 5 times the cross-sectional area of the resistor 2. Thus, the resistance of the leads 3 can be made smaller than the resistance of the resistor 2. In other words, the resistance of the resistor 2 is made larger than the resistance of the leads 3. Thus, the heater 10 is designed to generate heat in the resistor 2. Specifically, in the heater 10 of this embodiment, the thickness of the leads 3 is 1 to 2.5 mm. In the heater 10 of this embodiment, the width of the leads 3 is 0.5 to 1.5 mm.
By reducing the content of the ceramic particles 32 in the leads 3 to be less than the content of the ceramic particles 22 in the resistor 2, the resistance of the leads 3 may be made less than the resistance of the resistor 2.
Herein, the conductor line 6 (resistor 2 and leads 3) contains the electrical conductors 21 and 31 and the ceramic particles 22 and 32. The ceramic particles 22 contained in the resistor 2 are smaller than the ceramic particles 32 contained in the leads 3. Thus, the level of the thermal stress generated between the resistor 2 and the insulating base 1 and the level of the thermal stress generated between the leads 3 and the insulating base 1 can be brought close to each other during a heat cycle. As a result, concentration, in a specific portion, of the thermal stress generated inside the heater 10 can be reduced.
Specifically, due to the fact that the ceramic particles 22 contained in the resistor 2 are small, the specific surface area of the ceramic particles 22 contained in the resistor 2 increases. Due to the fact that the ceramic particles 22 with a large specific surface area are dispersed in the electrical conductors 21, the resistor 2 is relatively difficult to thermally expand. On the other hand, due to the fact that the ceramic particles 32 contained in the leads 3 are large, the specific surface area of the ceramic particles 32 contained in the leads 3 is decreased. Due to the fact that the ceramic particles 32 with a small specific surface area are dispersed in the electrical conductors 31, the leads 3 thermally expand relatively easily. When focusing on the temperature distribution of the heater 10 when using the heater 10, while the temperature of the resistor 2 which generates heat becomes relatively high, the temperature of the leads 3 becomes relatively low. More specifically, due to the fact that the ceramic particles 22 contained in the resistor 2 are smaller than the ceramic particles 32 contained in the leads 3, the resistor 2, whose temperature becomes relatively high, can be made difficult to thermally expand and also the leads 3, whose temperature becomes relatively low, can be made easy to thermally expand. Thus, when using the heater 10, a difference between the thermal stress generated between the resistor 2 and the insulating base 1 and the thermal stress generated between the leads 3 and the insulating base 1 can be decreased.
Herein, the average particle diameter of the ceramic particles 32 contained in the leads 3 is 0.1 to 15 μm. The average particle diameter of the ceramic particles 22 contained in the resistor 2 is 20% or more and 90% or less and preferably 50% or more and 70% or less of the average particle diameter of the ceramic particles contained in the leads 3.
The average particle diameter of these ceramic particles 22 and 32 may be measured as follows. The heater 10 is cut at an arbitrary place where the resistor 2 or the leads 3 are buried, and then the cross-sectional portion is observed under a scanning electron microscope (SEM) or a metallurgical microscope. Five arbitrary straight lines are drawn in the obtained image, and the average length of 50 particles crossed by the straight lines can be defined as the average particle diameter. This method for determining the average particle diameter is also referred to as the chord method. The average particle diameter can also be determined with an image-analysis device, LUZEX-FS, manufactured by Nireco Corporation, in place of the chord method described above.
In the heater 10 of this embodiment, the ceramic particles 22 and 32 constituting the conductor line 6 (resistor 2 and leads 3) contain the same ceramic material as that used to form the insulating base 1. Thus, when the temperature of the conductor line 6 (resistor 2 and leads 3) increases, the thermal stress generated between the conductor line 6 and the insulating base 1 can be decreased. This can reduce the occurrence of microcracks in the interface between the conductor line 6 and the insulating base 1. The fact that the ceramic particles 22 and 32 are formed of the same ceramic as that forming the insulating base 1 does not always mean that the ceramic particles 22 and 32 contain completely the same ceramic as that of the insulating base 1. Specifically, the case where the main component of the ceramic particles 22 and 32 and the main component of the insulating base 1 contain the same ceramic is also included. For example, a case is mentioned where when the insulating base 1 is one in which silicon nitride is contained as the main component and a sintering aid component is contained therein, the ceramic particles 22 and 32 contain silicon nitride.
In another example of this embodiment, both the ceramic particles 22 and 32 contained in the resistor 2 and the leads 3 are needle-shaped particles, as illustrated in
Specifically, in another example of the embodiment of the present invention, when the ceramic particles 32 contained in the leads 3 are observed by the chord method described above, the average aspect ratio (major axis length/minor axis length) of the particles crossing the straight lines is 1.5 to 10 and the average major axis length is 0.1 to 15 μm, for example. In this case, when the ceramic particles 22 contained in the resistor 2 are observed by the chord method described above, the average aspect ratio (major axis length/minor axis length) of the particles crossing the straight lines is smaller than the average aspect ratio of the ceramic particles 32 contained in the leads 3. The average major axis length of the ceramic particles 22 contained in the resistor 2 is 90% or less of the average major axis length of the ceramic particles 32 contained in the leads 3.
Due to the fact that both the ceramic particles 22 and 32 contained in the resistor 2 and the leads 3 are needle-shaped particles, the ceramic particles 22 and the ceramic particles 32 are entangled with each other, thus improving the strength of the heater 10. As a result, the possibility of breakage due to an external force occurring in the heater 10 can be reduced.
The present invention is not limited to the case where both the ceramic particles 22 and 32 contained in the resistor 2 and the leads 3 are needle-shaped particles. The ceramic particles 32 contained in the leads 3 may be needle-shaped particles and the ceramic particles 22 contained in the resistor 2 may be particles having a shape other than the needle shape. Alternatively, the ceramic particles 22 contained in the resistor 2 may be needle-shaped particles and the ceramic particles 32 contained in the leads 3 may be particles having a shape other than the needle shape. In such a case, the major axis length of the needle-shaped particles is compared with the length (diameter) of the particles having a shape other than the needle shape, and then the size of the particles is evaluated.
As illustrated in
The heater 10 of this embodiment can be used as a glow plug 100 having a metal holding member 4 which is electrically connected to the lead 3 and holds the heater 10, as illustrated in
The metal holding member 4 (sheath metal fitting) is a metal cylindrical body holding the heater 10. The metal holding member 4 is joined to one of the leads 3 drawn out to the side surface of the insulating base 1 with a wax material or the like. The electrode 5 is joined to the other one of the leads 3 drawn out to the back end of the insulating base 1 with a wax material or the like. Due to the fact that the glow plug 100 of this example has the heater 10 in which a difference between the thermal stress generated between the resistor 2 and the insulating base 1 and the thermal stress generated between the leads 3 and the insulating base 1 is reduced, the durability is improved.
Next, a method for manufacturing the heater 10 of this embodiment is described.
The heater 10 of this embodiment can be molded by an injection molding method or the like, for example.
First, as the material of the electrical conductors 21 and 31, a conductive ceramic powder, such as WC, WSi2, MoSi2, or SiC, is prepared. As the material of the ceramic particles 22 and 32, an insulating ceramic powder, such as Si3N4, Al2O3, ZrO2, or AlN, is prepared. Then, a conductive paste to be formed into the resistor 2 or the leads 3 is produced using the conductive ceramic powder. Next, the insulating ceramic powder is dispersed in the conductive paste. In this process, as the insulating ceramic powder added to the conductive paste to be formed into the resistor 2, one having a particle diameter smaller than that of the insulating ceramic powder added to the conductive paste to be formed into the leads 3 is used. Separately, a ceramic paste to be formed into the insulating base 1 containing the insulating ceramic powder, a resin binder, and the like, is produced.
Next, a molded body (molded body a) of the conductive paste having a predetermined pattern to be formed into the resistor 2 is molded using the conductive paste by an injection molding method or the like. Then, the conductive paste is charged into a die in a state where the molded body a is held in the die, and then another molded body (molded body b) of the conductive paste having a predetermined pattern to be formed into the leads 3 is molded. Thus, the molded body a and the molded body b connected to the molded body a are held in the die.
Next, in the state where the molded body a and the molded body b are held in the die, the die is partially exchanged with one for molding the insulating base 1. Then, the ceramic paste to be formed into the insulating base 1 is charged into the die. Thus, a molded body (molded body d) of the heater 10 in which the molded body a and the molded body b are covered with another molded body (molded body c) of the ceramic paste is obtained.
Next, the obtained molded body d is fired at a temperature of 1650 to 1780° C. and at a pressure of 30 to 50 MPa, so that the heater 10 can be manufactured. It is desirable to perform the firing in a non-oxidizing gas atmosphere, such as hydrogen gas.
Examples of the heater 10 of the present invention are described. Two samples using the manufacturing method described above were produced as samples 2 and 3. Furthermore, a sample 1 was produced as a comparative example. Specifically, in the samples 1 to 3, the insulating base 1 contains silicon nitride as the main component and the resistor 2 and the leads 3 contain WC as the main component. In the samples 1 to 3, silicon nitride is dispersed as the insulating ceramic particles 22 and 32 in the resistor 2 and the leads 3. The particle diameter of the dispersed insulating ceramic particles 22 and 32 is as follows. In the sample 1, the insulating ceramic particles 22 with an average particle diameter of 10 μm were dispersed in the resistor 2 and the insulating ceramic particles 32 with an average particle diameter of 8 μm were dispersed in the leads 3. In the sample 2, the insulating ceramic particles 22 with an average particle diameter of 6 μm were dispersed in the resistor 2 and the insulating ceramic particles 32 with an average particle diameter of 8 μm were dispersed in the leads 3. In the sample 3, the insulating ceramic particles 22 with an average particle diameter of 4 μm were dispersed in the resistor 2 and the insulating ceramic particles 32 with an average particle diameter of 8 μm were dispersed in the leads 3.
The outer circumferential shape of the cross section of the insulating base 1 is a circular shape. The outer circumferential shape of the cross section of the resistor 2 and the leads 3 is an oval shape. The diameter of the insulating base 1 was 3.5 mm, the thickness of the resistor 2 and the leads 3 was 1.3 mm, and the width thereof was 0.6 mm.
A cycle test was performed using these heaters 10. The conditions of the cycle test are as follows. First, energization for 5 minutes is performed in the heater 10 in such a manner that the temperature of the resistor 2 reaches 1400° C., and thereafter, the energization is stopped and the heaters are allowed to stand for 2 minutes. A heat cycle test is performed in which the processes described above as one cycle were repeated for 10,000 cycles. The results are shown in Table 1.
When changes in the resistance of the heaters 10 before and after the heat cycle test were measured, the resistance change of the samples (samples 2 and 3) of the Example of the present invention was 1% or less. Moreover, when the resistor 2 and the leads 3 were observed, no generation of microcracks was observed in the resistor 2, the leads 3, or the connection portion thereof. On the other hand, the resistance change of the sample (sample 1) of the comparative example was 40%. Cracks were generated in the connection portion of the resistor 2 and the leads 3. The results above indicated that the thermal stress generated in the heater 10 can be reduced by the use of the configuration of the present invention.
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