Patent Application
20240395442
In the related art, in a vacuum pump such as a turbomolecular pump, a hermetic terminal is used to supply an electric signal from the outside of the vacuum pump to the inside that is a vacuum space. Such a hermetic terminal generally includes a tubular metal sleeve, a disk-shaped insulating base brazed to an inner peripheral surface of the metal sleeve and having a through hole in an axial direction, and a lead pin (conductive member) having a washer (annular member) fixed to the through hole.
As such a hermetic terminal, for example, Patent Document 1 discloses a hermetic terminal in which a metal layer (metallized layer) is formed on an inner peripheral surface of a through hole to a depth of 200 μm to 5 mm from a peripheral edge of the through hole of an insulating base and an opening portion of the through hole. A washer and a lead pin are fixed to the metal layer by brazing.
A hermetic terminal according to the present disclosure includes a metal sleeve having a tubular shape, a ceramic substrate fixed to an inner peripheral surface of the metal sleeve and including a first through hole along an axial direction of the metal sleeve, an annular member including a second through hole located coaxially with the first through hole, and a conductive member having a columnar shape, inserted into the first through hole and the second through hole, and brazed to the ceramic substrate and the annular member. An inner peripheral surface of the annular member facing the conductive member includes a first region curved in a direction away from the conductive member. A vacuum pump according to the present disclosure includes the hermetic terminal.
As described above, in a case in which the washer and the lead pin are fixed to the metal layer by brazing, when the straightness of an inner peripheral surface of the washer is less and a distance between the inner peripheral surface of the washer and an outer peripheral surface of the lead pin is great, the lead pin may be obliquely fixed to the insulating base. In such a case, wiring work for connection to a tip end of the lead pin may be difficult. On the other hand, when the distance between the inner peripheral surface of the washer and the outer peripheral surface of the lead pin is less, a sufficient amount of a brazing material is not able to flow between the inner peripheral surface of the washer and the outer peripheral surface of the lead pin. As a result, many voids may remain between the inner peripheral surface of the washer and the outer peripheral surface of the lead pin, resulting in poor bonding strength and airtightness.
An object of the present disclosure is to provide a hermetic terminal in which wiring work for connection to a tip end of a lead pin is easy and voids that may occur between an inner peripheral surface and an outer peripheral surface are suppressed.
As described above, in the hermetic terminal according to the present disclosure, an inner peripheral surface of an annular member facing a conductive member has a first region curved toward an outer peripheral surface. With such a structure, a contact area of a brazing material with respect to the inner peripheral surface of the annular member can be increased. Consequently, according to the hermetic terminal of the present disclosure, wiring work for connection to the tip end of the lead pin is easy, and voids that may occur between the inner peripheral surface and the outer peripheral surface are suppressed.
A hermetic terminal according to an embodiment of the present disclosure is described with reference to
The metal sleeve 2 has a tubular shape, and the shape of the metal sleeve 2 is not limited to a cylindrical shape, a square tubular shape (for example, a triangular tubular shape, a quadrangular tubular shape, a pentagonal tubular shape, a hexagonal tubular shape, or the like), or the like as long as the metal sleeve 2 has a tubular shape. The size of the metal sleeve 2 may be appropriately set in accordance with a device or the like to be provided with the hermetic terminal 1. The metal sleeve 2 has a length from 15 mm to 30 mm and an outer diameter of the outermost circumference from 20 mm to 30 mm, for example. In the case of a square tubular shape, the outer diameter means the length of the longest outer edge. The metal sleeve 2 is made of metal such as carbon steel, low alloy steel, tool steel, stainless steel, iron, copper, copper alloy, titanium, titanium alloy, molybdenum, molybdenum alloy, Fe—Ni alloy, Fe—Ni—Cr—Ti—Al alloy, Fe—Cr—Al alloy, Fe—Co—Cr alloy, Fe—Co alloy, Fe—Co—C alloy, Fe—Ni alloy, or Fe—Ni—Co alloy.
The carbon steel is an alloy of Fe and 0.02 mass % to 2.14 mass % of C, and contains Si, Mn, P, and S in addition to C. Such carbon steel includes, for example, S10C, S12C, S15C, S17C, S20C, S22C, S25C, S28C, S30C, S33C, S35C, S38C, S40C, S43C, S45C, S48C, S50C, S53C, S55C, S58C, S60C, S65C, S70C, and S75C defined in JIS G 4051:2016. The low alloy steel refers to carbon steel containing at least one selected from the group consisting of Al, B, Co, Cr, Cu, La, Mo, Nb, Ni, Pb, Se, Te, Ti, V, W, and Zr, and having a total content of these elements of 5 mass % or less.
The tool steel refers to a carbon tool steel material defined by JIS G 4401:2009 and an alloy tool steel material defined by JIS G 4404:2006.
The stainless steel refers to an alloy of Fe and 10.5 mass % or more of Cr and having a C content of 1.2% or less, and components other than this are defined by ISO 15510:2014, for example. Examples of the stainless steel include SUS304, SUS304L, SUS304ULC, SUS310ULC, and SUSXM15J1.
The ceramic substrate 3 is a member for fixing the conductive member 4 to be described below in the metal sleeve 2. As illustrated in
The ceramic substrate 3 is not limited as long as the ceramic substrate 3 is made of ceramic. Examples of such ceramic include ceramic containing aluminum oxide, aluminum nitride, silicon carbide, or silicon nitride as a main component.
In the present description, the “main component” refers to a component accounting for 80 mass % or more among the total of 100 mass % of the components constituting the ceramic. The identification of each component contained in the ceramic may be performed with an X-ray diffractometer using a CuKα beam, and the content of each component may be determined, for example, with an inductively coupled plasma (ICP) emission spectrophotometer or a fluorescence X-ray spectrometer.
The ceramic substrate 3 has a first through hole 3a along an axial direction of the metal sleeve 2. The first through hole 3a is a through hole for inserting the conductive member 4, and a diameter of the first through hole 3a is appropriately set in accordance with an outer diameter of the conductive member 4. At least one first through hole 3a is formed in the ceramic substrate 3, and the first through hole 3a is appropriately set in accordance with the number of conductive members 4 to be inserted.
As illustrated in
The annular member 5 is not limited as long as the annular member 5 is less than the width and thickness of the ceramic substrate 3 and has a size capable of inserting the conductive member 4. As for the size of the annular member 5, for example, an outer diameter of the annular member 5 is from about 1.2 times to 2 times the outer diameter of the conductive member 4, and particularly may be from 1.4 times to 1.8 times. The thickness of the annular member 5 is, for example, from 0.1 mm to 0.5 mm.
The annular member 5 has a second through hole 5a located coaxially with the first through hole 3a formed in the ceramic substrate 3. The second through hole 5a is a through hole for inserting the conductive member 4, and a diameter of the second through hole 5a is appropriately set in accordance with the outer diameter of the conductive member 4.
The conductive member 4 corresponds to a lead pin, and the shape of the conductive member 4 is not limited as long as the conductive member 4 has a columnar shape such as a cylindrical shape or a prism shape (for example, a triangular prism shape, a quadrangular prism shape, a pentagonal prism shape, a hexagonal prism shape, or the like). The length and the outer diameter of the conductive member 4 are appropriately set in accordance with, for example, the size of the metal sleeve 2. The conductive member 4 is made of metal such as copper or oxygen-free copper (for example, alloy number C1020 specified in JIS H 3100:2012, alloy number C1011 specified in JIS H 3510:2012, or the like). At least one conductive member 4 may be included, and may be appropriately set in accordance with the use or the like of the hermetic terminal 1.
The conductive member 4 is inserted into the first through hole 3a formed in the ceramic substrate 3 and the second through hole 5a formed in the annular member 5, and is fixed to the ceramic substrate 3. Specifically, the conductive member 4 is brazed to the surface of the ceramic substrate 3 by using a brazing material 6 to cover the annular member 5. Examples of the brazing material 6 include an Ag—Cu—Ti brazing material, BAg-8, BAg-8A, BAg-8B, and BAg-9. In the Ag—Cu—Ti brazing material, for example, Cu is 35 mass % to 50 mass %, Ti is 1 mass % to 8 mass %, and the remainder is silver (Ag), for example, in a total of 100 mass % of Ag, Cu, and Ti.
As illustrated in
On the inner peripheral surface of the annular member 5, the first region 51 may be provided at only one location or a plurality of locations. Since the inner peripheral surface of the annular member 5 includes the plurality of first regions 51, the contact area of the brazing material 6 with respect to the inner peripheral surface of the annular member 5 can be further increased. As a result, the airtightness and the bonding strength of the annular member 5 to the conductive member 4 can be further improved.
The curvature of the first region 51 is not limited and is preferably, for example, 0.6 (1/mm) or more. When the first region 51 is present in a plurality of locations, the curvature of each first region 51 is preferably 0.6 (1/mm) or more. When the curvature of the first region 51 is 0.6 (1/mm) or more, the contact area of the brazing material 6 with respect to the inner peripheral surface of the annular member 5 can be further increased. As a result, the airtightness and the bonding strength of the annular member 5 to the conductive member 4 can be further improved. The upper limit of the curvature of the first region 51 may be, for example, 1.2 (1/mm).
In order to obtain the curvature of the first region 51, the entire annular member 5 is first captured using a scanning electron microscope with a cross section including an axis of the conductive member 4 as a target. The curvature of the first region 51 may be obtained by tracing the inner peripheral surface of the annular member 5 displayed in the captured image. The magnification of the image is, for example, 35 times, but the magnification may be appropriately adjusted so that the entire annular member 5 is captured.
In order to fix the annular member 5 for a long period of time, a brazing portion interposed between the inner peripheral surface of the annular member 5 and the outer peripheral surface of the conductive member 4 preferably has less voids. Specifically, the void ratio of the brazing portion interposed between the inner peripheral surface of the annular member 5 and the outer peripheral surface of the conductive member 4 is preferably 1% or less in a cross-sectional view including the axis of the conductive member 4. An area of the brazing portion is an area of only a portion interposed between the inner peripheral surface of the annular member 5 and the outer peripheral surface of the conductive member 4 (that is, excluding the brazing material 6 located above an upper surface of the annular member 5 and the brazing material 6 located below a lower surface of the annular member 5) in the above image. The void ratio is a percentage of voids existing in the brazing portion when the area of the brazing portion is 100%.
As illustrated in
On the outer peripheral surface of the annular member 5, the second region 52 may be provided at only one location or a plurality of locations. Since the outer peripheral surface of the annular member 5 includes the plurality of second regions 52, the contact area of the brazing material 6 with respect to the outer peripheral surface of the annular member 5 can be further increased. As a result, even though an impact is applied from the outer peripheral side, the annular member 5 can be fixed for a longer period of time.
The curvature of the second region 52 is not limited and is preferably, for example, 0.6 (1/mm) or more. When the second region 52 is present in plural, the curvature of each second region 52 is preferably 0.6 (1/mm) or more. When the curvature of the second region 52 is 0.6 (1/mm) or more, the contact area of the brazing material 6 with respect to the outer peripheral surface of the annular member 5 can be further increased. As a result, even though an impact is applied from the outer peripheral side, the annular member 5 can be fixed for a longer period of time. The upper limit of the curvature of the second region 52 may be, for example, 1.2 (1/mm). The curvature of the second region 52 can be obtained by the same method as the method of obtaining the curvature of the first region 51.
As illustrated in
Although not illustrated, the first through hole 3a formed in the ceramic substrate 3 may have a second opening portion opened in an inverted frustum shape on a side opposite to the side where the annular member 5 is installed. When the second opening portion has a shape opened in an inverted frustum shape, stress in the ceramic substrate 3 in the vicinity of the second opening portion is more dispersed than when the second opening portion has a shape other than an inverted frustum shape. As a result, even though heating and cooling are repeated, cracks or the like are less likely to occur in the ceramic substrate 3, and the ceramic substrate 3 can be used for a long period of time. The inverted frustum shape may be an inverted truncated cone shape, an inverted truncated pyramidal shape, or the like in accordance with the shape of the conductive member 4 (the shape of the first through hole 3a). As illustrated in
In the first through hole 3a formed in the ceramic substrate 3, the first opening portion 3a′ and the second opening portion are preferably symmetrical with respect to a virtual plane perpendicular to an axial direction of the first through hole 3a and passing through the center of the thickness of the ceramic substrate 3. With such a configuration, uneven distribution of stress in the thickness direction (axial direction) of the ceramic substrate 3 is suppressed. As a result, cracks or the like are less likely to occur in the ceramic substrate 3, and the ceramic substrate 3 can be used for a long period of time.
As illustrated in
When a metallized layer and a plating layer covering the metallized layer are provided on the surface of the ceramic substrate 3 to surround the conductive member 4, an average value of a cut level difference Rδc1 representing a difference between a cut level at a load length ratio of 25% in a roughness curve of a surface of the plating layer and a cut level at a load length ratio of 75% in the roughness curve may be greater than an average value of a cut level difference Rδc2 representing a difference between a cut level at a load length ratio of 25% in a roughness curve of an exposed portion of the surface of the ceramic substrate 3 and a cut level at a load length ratio of 75% in the roughness curve.
When the average value of the cut level difference Rδc1 is greater than the average value of the cut level difference Rδc2, an anchor effect of the brazing portion is enhanced, so that the bonding strength of the brazing portion to the plating layer can be enhanced. In this case, the average value of the cut level difference Rδc2 is less than the average value of the cut level difference Rδc1. Therefore, voids are less likely to occur between the surface of the ceramic substrate 3 and the metallized layer, and the adhesion of the metallized layer to the ceramic substrate 3 is improved. Variations in the thickness of the metallized layer are also suppressed.
The cut level differences Rδc1 and Rδc2 can be measured using a shape analysis laser microscope (manufactured by KEYENCE Corporation, ultra-deep color 3D shape measuring microscope (VK-X1100 or successor models thereof)). The measurement conditions are as follows: an illumination method of coaxial illumination, a magnification of 60 times, a cutoff value λs of “None”, a cutoff value λc of 0.8 mm, a cutoff value λf of “None”, and a termination effect correction of “On”. The measurement is performed on the surface of the plating layer around the conductive member 4 and the exposed portion of the surface of the ceramic substrate 3, and for example, the measurement range per location is set to 5657 μm×4232 m. When obtaining the cut level difference Rδc1, a circumferential C1 to be measured centered on the axial center of the conductive member 4 is drawn on the surface of the plating layer. A length per circumference is, for example, from 6.2 mm to 6.6 mm. When obtaining the cut level difference Rδc2, a circumferential C2 is drawn on the exposed portion of the surface of the ceramic substrate 3 coaxially with the circumferential C1. A length per circumference is, for example, from 7.8 mm to 8.3 mm. The respective measured values of the cut level differences Rδc1 and Rδc2 may be obtained to be the same number as the number of the conductive members 4, and the average value of the obtained values may be calculated. When the number of the conductive members 4 is 1, the measured value of the cut level difference Rδc1 and the measured value of the cut level difference Rδc2 may be compared with each other.
For example, the average value of the cut level difference Rδc1 is from 4 μm to 7 μm, and the average value of the cut level difference Rδc2 is from 1 μm to 2 μm. In particular, a difference between the average value of the cut level differences Rδc1 and the average value of the cut level differences Rδc2 may be from 2 μm to 5 μm.
The metallized layer contains, for example, molybdenum as a main component and contains manganese. In this case, out of 100 mass % of the components constituting the metallized layer, for example, the content of manganese is from 10 mass % to 30 mass % and the remainder is molybdenum. The thickness of the metallized layer is, for example, several tens of μm. The plating layer may contain, for example, nickel as a main component and contain phosphorus or boron. The thickness of the plating layer is, for example, several μm.
A hermetic terminal 20 according to another embodiment of the present disclosure is described with reference to
A convex surface 8 is formed at the boundary between the concave surfaces 7a and 7b. A top of the convex surface 8 may be close to the intersecting line of between the upper surface and the outer peripheral surface of the annular member 5. When the top of the convex surface 8 is close to the intersecting line of between the upper surface and the outer peripheral surface of the annular member 5, the thickness of the brazing material is thin at a portion close to the convex surface 8. Therefore, the stress applied to the ceramic substrate 3 is reduced, and the occurrence of cracks in the ceramic substrate 3 can be particularly suppressed.
The average radius of curvature of the convex surface 8 may be from 60 μm to 190 μm. When the average radius of curvature of the convex surface 8 is from 60 μm to 190 μm, the bonding strength of the conductive member 4 to the ceramic substrate 3 is improved. Moreover, when a plurality of conductive members 4 are disposed along the axial direction of the metal sleeve 2, adjacent conductive members 4 can be suppressed from being short-circuited by the brazing material 6. When the conductive member 4 has a cylindrical shape, the convex surface 8 has an annular shape surrounding the conductive member 4.
The average radius of curvature of the convex surface 8 can be measured using a shape analysis laser microscope (manufactured by KEYENCE Corporation, ultra-deep color 3D shape measuring microscope (VK-X1100 or successor models thereof)). The profile measurement may be performed by setting the measurement conditions that an illumination method is coaxial illumination and a magnification is 120 times and setting the measurement range including the convex surface 8 to, for example, 2792 μm×2093 μm per location. Specifically, first, in one measurement range, four lines to be measured are drawn from the conductive member 4 side toward the ceramic substrate 3 side to include the convex surface 8.
A length of one line is, for example, from 200 μm to 300 μm. At least three measurement ranges are set, and the number of lines to be measured is at least 12. An average value of measured values obtained from the 12 lines to be measured is defined as the average radius of curvature of the convex surface 8.
A hermetic terminal 30 according to another embodiment of the present disclosure is described with reference to
A hermetic terminal 40 according to another embodiment of the present disclosure is described with reference to
On the other hand, in a region on the right side of the drawing sheet, the volume of the brazing material 6 between the first region 51 and the conductive member 4 increases. In the region on the right side of the drawing sheet, the volume of the brazing material 6 between the first region 51 and the conductive member 4 decreases. By unevenly distributing the brazing material 6 as described above, local concentration of stress on a part of the first opening portion 3a′ of the ceramic substrate 3 is suppressed. As a result, the occurrence of cracks in the ceramic substrate 3 can be particularly suppressed.
The hermetic terminal 1 according to an embodiment is manufactured by, for example, the following procedure. First, the metal plate 2 is prepared. Subsequently, the ceramic substrate 3 is fixed to the inner peripheral surface of the metal sleeve 2. The annular member 5 is placed on the ceramic substrate 3 so that the first through hole 3a formed in the ceramic substrate 3 and the second through hole 5a formed in the annular member 5 overlap each other. Subsequently, the conductive member 4 is inserted into the first through hole 3a and the second through hole 5a, and the ceramic substrate 3 is fixed to the conductive member 4 and the annular member 5 with the brazing material 6 to cover the annular member 5. By adjusting the mass of the brazing material 6 and the brazing temperature, the void ratio of the brazing portion interposed between the inner peripheral surface of the annular member 5 and the outer peripheral surface of the conductive member 4 and the shape of the fillet to be formed can be controlled.
When a metallized layer and a plating layer covering the metallized layer are provided on the surface of the ceramic substrate 3 to surround the conductive member 4, the surface of the ceramic substrate 3 may be ground or polished in advance so that an average value of the cut level difference Rδc1 representing a difference between a cut level at a load length ratio of 25% in a roughness curve of a surface of the plating layer and a cut level at a load length ratio of 75% in the roughness curve may be greater than an average value of the cut level difference Rδc2 representing a difference between a cut level at a load length ratio of 25% in a roughness curve of the exposed portion of the surface of the ceramic substrate 3 and a cut level at a load length ratio of 75% in the roughness curve. By doing so, the hermetic terminal 1 according to an embodiment is obtained.
The hermetic terminal 20 according to another embodiment having the concave portions 7a and 7b and the convex portion 8 illustrated in
The annular member 5 is placed on the ceramic substrate 3 so that the first through hole 3a formed in the ceramic substrate 3 and the second through hole 5a (previously coated with the brazing material 6) formed in the annular member 5 overlap each other. Subsequently, the conductive member 4 is inserted into the first through hole 3a and the second through hole 5a, and the ceramic substrate 3 is fixed to the conductive member 4 and the annular member 5 with the brazing material 6 to cover the annular member 5. By doing so, the hermetic terminal 20 according to another embodiment is obtained.
The hermetic terminal 30 according to another embodiment in which a part of the annular member 5 is located inside the first opening portion 3a′ of the ceramic substrate 3 illustrated in
The hermetic terminals 40 in which the distances W1 and W2 illustrated in
As a second manufacturing method, the metal sleeve 2 is first prepared. Subsequently, the ceramic substrate 3 is fixed to the inner peripheral surface of the metal sleeve 2. The annular member 5 is placed on the ceramic substrate 3 so that the first through hole 3a formed in the ceramic substrate 3 and the second through hole 5a formed in the annular member 5 overlap each other. Subsequently, the conductive member 4 is inserted into the first through hole 3a and the second through hole 5a. Before fixing with the brazing material 6, the ceramic substrate 3 is inclined so that the axial direction of the annular member 5 is inclined at 10° to 30° with respect to a vertical direction. Subsequently, while the annular member 5 and the ceramic substrate 3 are held in the inclined state, the brazing material 6 is heated and cooled to fix the conductive member 4 and the annular member 5. By doing so, the hermetic terminal 40 according to another embodiment is obtained.
Alternatively, the ceramic substrate 3 may be fixed to the inner peripheral surface of the metal sleeve 2 after the conductive member 4 and the annular member 5 are fixed to the ceramic substrate 3 with the brazing material 6 in advance. The annular member 5 having the first region 51 in which the inner peripheral surface facing the conductive member 4 is curved in a direction away from the conductive member 4 can be obtained by preparing a metal plate-like body in advance and sequentially performing resist application, mask exposure, development, etching, and resist peeling.
The hermetic terminal 1 according to an embodiment is used in various devices. Examples of such devices include vacuum pumps and plasma processing devices such as plasma film forming devices, plasma etching devices, and plasma ashing devices.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-159883 | Sep 2021 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2022/036263 | 9/28/2022 | WO |
