Heterojunction bipolar transistor and power amplifier using same

Abstract

In order to lay out a power amplifier heterojunction bipolar transistor capable of large power output in a small area, the subject invention provides a heterojunction bipolar transistor constituted of a plurality of transistor components arranged on a sub-collector layer, collector layers of said transistor components being separated one another, said transistor components being arranged in a line in a longitudinal direction of an emitter. The subject invention also provides a multi-finger type heterojunction bipolar transistor using the heterojunction bipolar transistor as a unit transistor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a HBT according to the first embodiment of the present invention.

FIG. 2 is a plan view of a multi-finger type HBT according to the first embodiment of the present invention.

FIG. 3 is a plan view of a HBT according to the second embodiment of the present invention.

FIG. 4 is a plan view of a multi-finger type HBT according to the third embodiment of the present invention.

FIG. 5 is a circuit diagram for explaining the third embodiment of the present invention.

FIG. 6 is a plan view of a conventional multi-finger type HBT.

FIG. 7 is a plan view of a conventional multi-finger type HBT.

FIG. 8 is a plan view of a conventional HBT.

FIG. 9 is a cross-sectional view of the HBT shown in FIG. 8.

FIG. 10 is a plan view of a conventional HBT.

FIG. 11 is a cross-sectional view of the HBT shown in FIG. 10.

FIG. 12 is a cross-sectional view of a conventional HBT.

FIG. 13 is a circuit diagram of a conventional power amplifier MMIC.

FIG. 14 is a graph showing a characteristic of a conventional HBT.

Claims

1. A heterojunction bipolar transistor comprising a plurality of transistor components on a sub-collector layer, collector layers of said transistor components being separated one another, said transistor components being arranged in a line in a longitudinal direction of an emitter.

2. A multi-finger type heterojunction bipolar transistor constituted of a plurality of heterojunction bipolar transistors aligned in parallel, each of said heterojunction bipolar transistors comprising a plurality of transistor components on a sub-collector layer, collector layers of said transistor components being separated one another, said transistor components being arranged in a line in a longitudinal direction of an emitter.

3. A multi-finger type heterojunction bipolar transistor constituted of a plurality of heterojunction bipolar transistors aligned in parallel in a short-length direction of an emitter, said heterojunction bipolar transistor comprising a plurality of transistor components on a sub-collector layer, collector layers of said transistor components being separated one another, said transistor components being arranged in a line in a longitudinal direction of the emitter.

4. A power amplifier comprising a heterojunction bipolar transistor as an amplification element, said heterojunction bipolar transistor comprising a plurality of transistor components on a sub-collector layer, collector layers of said transistor components being separated one another, said transistor components being arranged in a line in a longitudinal direction of an emitter.

5. A heterojunction bipolar transistor comprising on a sub-collector layer a plurality of transistor components, each of which includes a collector layer, a base layer and an emitter layer, the collector layers being connected one another in parallel, the base layers being connected one another in parallel, and the emitter layers being connected one another in parallel within said transistor components, said emitter layer being a rectangle, said transistor components being arranged in a line in a longitudinal direction of said emitter layer.

6. A multi-finger type heterojunction bipolar transistor constituted of a plurality of heterojunction bipolar transistors aligned in parallel, each of said heterojunction bipolar transistors comprising on a sub-collector layer a plurality of transistor components, each of which includes a collector layer, a base layer and an emitter layer, the collector layers being connected one another in parallel, the base layers being connected one another in parallel, and the emitter layers being connected one another in parallel within said transistor components, said emitter layer being a rectangle, said transistor components being arranged in a line in a longitudinal direction of said emitter layer.

7. A multi-finger type heterojunction bipolar transistor constituted of a plurality of heterojunction bipolar transistors aligned in parallel in a short-length direction of an emitter layer, said heterojunction bipolar transistor comprising on a sub-collector layer a plurality of transistor components, each of which includes a collector layer, a base layer and an emitter layer, the collector layers being connected one another in parallel, the base layers being connected one another in parallel, and the emitter layers being connected one another in parallel within said transistor components, said emitter layer being a rectangle, said transistor components being arranged in a line in a longitudinal direction of said emitter layer.

8. A power amplifier comprising a heterojunction bipolar transistor as an amplification element, said heterojunction bipolar transistor comprising on a sub-collector layer a plurality of transistor components, each of which includes a collector layer, a base layer and an emitter layer, the collector layers being connected one another in parallel, the base layers being connected one another in parallel, and the emitter layers being connected one another in parallel within said transistor components, said emitter layer being a rectangle, said transistor components being arranged in a line in a longitudinal direction of said emitter layer.