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"NpnN Double-Heterojunction Bipolar Transistor on InGaAsP/InP" by Kaumanns et al; Appl. Phys. Lett. 47(1), Jul. 1, 1985; pp., 28-30. |
"Fully Self-Aligned ALGaAs.GaAs HBT with ALGSaAs Passivation Layer" by Hayama et al; ED89-147; pp., 67-74 (English abstract is attached). |
"Subpicosecond InP/InGaAs Heterostructure Bipolar Transistors" by Chen et al; IEEE Electron Device Letters, vol. 10, No. 6, Jun. 1989; pp., 267-269. |
"High-Current-Gain InGaAs/InP Double-Heterojunction Bipolar Transistors Grown By Metal Organic Vapor Phase Epitaxy" by Sugiura et al; IEEE Electron Device Letters, vol. 9, No. 5, May 1988; pp., 253-255. |
"A Tunneling Emitter Bipolar Transistor" by Xu et al; IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986; pp., 416-418. |