Number | Name | Date | Kind |
---|---|---|---|
3466512 | Seidel | Sep 1969 | |
4176366 | Delagebeaudeuf | Nov 1979 | |
4291320 | Wen et al. | Sep 1981 | |
4857972 | Jorke et al. | Aug 1989 |
Entry |
---|
High Efficiency GalnAs/InP Heterojunction IMPATT Diodes; DeJaeger et al. IEEE Transactions on Electron Decives, vol. ED-30, No. 7, Jul. 1983. |
Transit-Time-Induced Microwave Negative Resistance in Gal-xAlxAs-GaAs Heterostructure Diodes; Electonics Letters Sep. 18, 1975; vol. 11 No. 19, pp. 457-458. |