Information
-
Patent Grant
-
6630866
-
Patent Number
6,630,866
-
Date Filed
Monday, December 3, 200123 years ago
-
Date Issued
Tuesday, October 7, 200321 years ago
-
Inventors
-
Original Assignees
-
Examiners
- Tokar; Michael
- Nguyen; Linh Van
Agents
- Swayze, Jr.; W. Daniel
- Brady; W. James
- Telecky, Jr.; Frederick J.
-
CPC
-
US Classifications
Field of Search
US
- 330 265
- 330 267
- 330 263
- 330 264
- 330 288
- 330 255
- 330 296
- 330 51
- 330 270
- 330 271
-
International Classifications
-
Abstract
The present invention provides an high beta, high speed operational amplifier output stage (100). The advantages of the operational amplifier output stage over conventional methods disclosed is up to β2 rather than a single beta. The present invention achieves this using an pre-driver sub-stage (122) having a plurality of translinear loops so that there is no net signal loss to the final sub-stage (123). The output of the disclosed operational amplifier output stage takes the form:δIo≈βn*βp*δIin.When used with a localized feedback circuitry, speed performance is increased and bandwidth is extended.
Description
TECHNICAL FIELD OF THE INVENTION
This invention generally relates to electronic systems and in particular to operational amplifier output stages.
BACKGROUND OF THE INVENTION
Operational amplifiers are used in many electronic circuits to condition, manipulate and amplify signals. The operating characteristics of a particular operational amplifier are dependent upon its circuit topology. Generally, the operational amplifier consists of a number of stages, each containing internal sub-stages.
Two important operating characteristics of an operational amplifier are its amplification characteristics and its speed. High beta (β) and high speed are desirable in operational amplifiers that have a variety of application, including DSL Drivers. Beta (β) refers to the ratio of DC collector current to DC base current in a bipolar junction transistor or current gain from base to collector. β is very important parameter that varies with collector current and temperature.
SUMMARY OF THE INVENTION
The present invention achieves technical advantages as a high β, high speed operational amplifier output stage using a localized feedback system in which current gains are close to β
n
*β
p
, where β
n
refers to the beta of either the pre-driver npn transistor, output driver npn transistor or an average of both, depending on the current signal and β
p
refers to the beta of either the pre-driver pnp transistor, output pnp transistor or an average of both. Where signal current is large and positive, load conduction is through the output npn transistor and pre-driver pnp transistor. Where signal current is large and negative, load conduction is through the pre-driver npn transistor and output pnp transistor. Where the signal is small, load conduction varies in tandem through the output npn transistor and pre-driver pnp transistor and the output pnp transistor and pre-driver npn transistor.
The output stage can be seen to comprise a pre-driver sub-stage and final sub-stage. The pre-driver sub-stage is further comprised of a first and a second pre-driver sub-stage circuit. In addition, the final sub-stage is further comprised of a first and a second final sub-stage circuit. The input to the present invention comprises a transconductance (“g
n
”) cell which, when a voltage is applied thereto, an error voltage appears across the input g
m
cell and an error current is produced at the output of the input g
m
cell. The error current (δI
in
) flows into the emitters of two pre-driver sub-stage transistors and flows out of their collectors into the bases of two other pre-driver transistors. Through this translinear loop, no net signal is lost. The gained up error currents then flow into the final sub-stage translinear loop, specifically, into the bases of two final sub-stage transistors. Effectively, in the small signal context, the first pre-driver sub-stage circuit amplifies a positive portion of the current signal for output to the first final sub-stage circuit while the second pre-driver sub-stage circuit amplifies a negative portion of the current signal for output to the second final sub-stage circuit. The first and second final sub-stages further amplify the positive portion and negative portion, respectively, of the current signal.
The first and second final sub-stage circuits are interconnected at an output terminal of the operational amplifier final stage such that the amplified positive portion of the signal and amplified negative portion of the signal are joined substantially in phase, in the form δI
o
≈B
n
*B
p
*δI
in
. By feeding back a portion of the output signal using a variety of feedback principles, speed characteristics can be further improved.
BRIEF DESCRIPTION OF THE DRAWINGS
For a more complete understanding of the present invention, reference is made to the detailed description taken in conjunction with the following drawings:
FIG. 1
is a circuit diagram of a first conventional operational amplifier output stage;
FIG. 2
is a circuit diagram of a second conventional operational amplifier output stage;
FIG. 3
is a graph illustrating the linearity characteristics of the first conventional operational amplifier. This figure shows the first derivative (δV
o
/δV
i
) of the amplifier's DC transfer characteristic;
FIG. 4
is a graph illustrating the linearity characteristics of the second conventional operational amplifier. This figure shows the first derivative (δV
o
/δV
i
) of the amplifier's DC transfer characteristic;
FIGS. 5A and 5B
show the single ended and differential linearity characteristics of the first conventional operational amplifier output stage using a discrete multi-tone (“DMT”) signal with missing tones;
FIG. 6
is a graph illustrating the typical linearity characteristics of the first conventional operational amplifier output stage in harmonic distortion form;
FIG. 7
is a circuit diagram of a first embodiment of the present invention with a g
m
cell input;
FIG. 8
is a circuit diagram of a second embodiment of the present invention with a g
m
cell input;
FIG. 9
is a graph illustrating the linearity characteristics of the first embodiment of the present invention. This figure shows the first derivative (δV
o
/δV
i
) of the amplifier's DC transfer characteristic;
FIGS. 10A and 10B
are graph illustrating the linearity characteristics of the first embodiment of the present invention using a DMT signal with missing tones;
FIG. 11
is a graph illustrating the linearity characteristics of the first embodiment of the present invention in harmonic distortion form;
FIG. 12
illustrates the translinear loop formed by the first, second, third and fourth transistors;
FIG. 13
illustrates the translinear loop formed by the fifth, sixth, seventh and eight transistors;
FIG. 14
is a circuit diagram of the final sub-stage of the first embodiment of the present invention using type I biasing of the output transistors in a no-load configuration;
FIG. 15
is a circuit diagram of the final sub-stage of the first embodiment of the present invention using type I biasing of the output transistors with a load;
FIG. 16
is a graph illustrating the current gain of the final sub-stage of the first embodiment of the present invention;
FIG. 17
is a circuit diagram of the final sub-stage of the second embodiment of the present invention using type II biasing of the output transistors in a no load configuration;
FIG. 18
is a circuit diagram of the final sub-stage of the second embodiment of the present invention using type II biasing of the output transistors with a signal applied to such final sub-stage's input;
FIG. 19
is a graph illustrating the DC current transfer characteristic of the final sub-stage of
FIG. 18
;
FIG. 20
is a graph illustrating the DC current transfer characteristic of the final sub-stage of
FIG. 15
;
FIG. 21
is a graph illustrating the linearity characteristic of the final sub-stage of FIG.
15
and FIG.
18
. This figure shows the first derivative (δI
o
/δI
i
) of the amplifiers' DC current transfer characteristics;
FIG. 22
is a circuit diagram of a conventional operational amplifier illustrating bias setup for the output transistors;
FIG. 23
is a graph illustrating the DC current transfer characteristics of circuit depicted in
FIG. 22
;
FIG. 24
is a circuit diagram of the first embodiment of the present invention with current feedback circuitry;
FIG. 25
is a circuit diagram of the first embodiment of the present invention with voltage feedback circuitry;
FIG. 26
is a circuit diagram of the second embodiment of the present invention with current feedback;
FIG. 27
is a circuit diagram of the second embodiment of the present invention with voltage feedback;
FIGS. 28A
,
28
B,
28
C,
28
D, are graph comparing the linearity characteristics between the two conventional operational amplifiers and the first and second embodiments of the present invention. The figure shows the first derivative of the amplifiers' gain.
FIG. 29
is a circuit diagram of the first embodiment of the present invention with a compound darlington output stage using type I biasing;
FIG. 30
is a circuit diagram of the first embodiment of the present invention with a compound darlington output stage using type I biasing and a differential pair input g
m
cell;
FIG. 31
is a circuit diagram illustrating a current feedback stability loop;
FIG. 32
is a circuit diagram implementing conventional Miller compensation using a current feedback with the embodiments of the present invention;
FIG. 33
is a circuit diagram illustrating a voltage feedback stability loop;
FIG. 34
is a circuit diagram illustrating implementation of conventional Miller compensation using voltage feedback to achieve right-half-plane zero (“RHPZ”) cancellation with the embodiments of the present invention; and
FIG. 35
is a circuit diagram illustrating a method for achieving low frequency precision in either of the first or second embodiments of the present invention.
DESCRIPTION OF CONVENTIONAL AMPLIFIER OUTPUT STAGES
FIG. 1
is a circuit diagram of a first conventional operational amplifier output stage.
FIG. 2
is a circuit diagram of a second conventional operational amplifier output stage.
FIG. 3
illustrates the linearity characteristics of such first conventional operational amplifier by showing the first derivative of the DC transfer characteristic.
FIG. 4
illustrates the linearity of such second conventional operational amplifier by showing the first derivative off the DC transfer characteristic.
FIG. 5
illustrates the single ended and differential linearity of such first conventional operational amplifier with a discrete multi tone (“DMT”) signal with missing tones. DMT signal is a broadband signal containing many sinusoids spaced at equal intervals. The missing tone performance looks for intermodulation products from the broadband DMT signal in at a frequency where there is no sinewave present in the DMT signal. DMT is a rigorous test of an amplifier's linearity.
FIG. 6
illustrates the typical linearity of such first and second conventional operational amplifiers in harmonic distortion form.
DETAILED DESCRIPTION OF THE PRESENT INVENTION
Two embodiments of the present invention are shown in
FIGS. 7 and 8
. As compared to the conventional operational amplifier output stages as disclosed in
FIGS. 1 and 2
, the disclosed embodiments of an operational amplifier output stage as shown in
FIGS. 7 and 8
, provides a high β output (up to β
2
) and high speed with significantly reduced crossover distortion. Because of its high speed, the disclosed invention has the advantage of extended bandwidth. The disclosed operational amplifier output stage comprises a pre-driver sub-stage utilizing translinear current loops and a final sub-stage. The final sub-stage of the operational amplifier output stage disclosed herein comprises a complementary set of compound darlington transistors enclosed in a localized feedback system.
As used herein, translinearity refers to the characteristics of non-linear circuits whose operation is based on the exponential current-voltage relationship of the bipolar junction transistor; β refers to the ratio of DC collector current to DC base current in a bipolar junction transistor or current gain from base to collector; a represents the fraction of signal current going into one half of the pre-driver sub-stage, λ refers to the fraction of signal current going into the other half of the pre-driver sub-stage, and A refers to the emitter area of the BJT in consideration.
FIG. 7
is a circuit diagram of the first embodiment of an operational amplifier output stage having reduced supply current and high linearity constructed according to the teachings of the present invention. The circuit
100
includes an input g
m
cell
121
, pre-driver sub-stage comprised of eight pre-driver sub-stage transistors
101
,
102
,
103
,
104
,
105
,
106
,
107
and
108
, a final sub-stage comprising four final sub-stage transistors
109
,
110
,
111
and
112
, and four current sources
131
,
132
,
133
and
134
. The input g
m
cell
121
is configured to accept an input voltage signal, produce an error voltage across: its input, and produce an output error current (δI
in
).
As shown therein, a first voltage supply rail
41
is coupled to a first node
51
, a second voltage supply rail
42
is coupled to a fifth node
55
.
The first pre-driver sub-stage circuit consists of four transistors
101
,
102
,
103
and
104
. In the first pre-driver sub-stage circuit, the emitter of the first transistor
101
is coupled to the first voltage supply rail
41
at the first node
51
, and the base of the first transistor
101
is coupled to a second node
52
. The emitter of the second transistor
102
is also coupled to the second node
52
; and its base is coupled to a third node
53
. The base and collector of the third transistor
103
are also coupled to the third node
53
. The collector arid base of the fourth transistor
104
are each coupled to a fourth node
54
. The emitter of the fourth transistor
104
is coupled to the voltage supply rail
41
at the first node
51
.
The second pre-driver sub-stage circuit comprises four transistors
105
,
106
,
107
and
108
. The second voltage supply rail
42
is coupled to the fifth node
55
. The emitter of the fifth transistor
105
is coupled to the second voltage supply rail
42
at the fifth node
55
and its base is coupled to a the sixth node
56
. The emitter of the sixth transistor
106
is coupled, to the sixth node
56
and its base is coupled to a seventh node
57
. The collector of the sixth transistor
106
is coupled to the second node
52
. The base and collector of the seventh transistor
107
are coupled to a seventh node
57
and its emitter is coupled to an eighth node
58
. The collector and base of the eighth transistor
108
are coupled to the eighth node
58
, and the emitter of the eighth transistor
108
is coupled to the second voltage supply rail
42
at the fifth node
55
.
The collector of the second transistor
102
and the emitter of the sixth transistor
106
are coupled to a common sixth node
56
. The emitter of the second transistor
102
and the emitter of the sixth transistor
106
are coupled to a common second node
52
. The cross connection advantageously results in no error current being lost in the translinear loops.
A first current source
131
is coupled to the first voltage supply rail
41
at the first node
51
and at the second node
52
. A second current source
132
is coupled to the first voltage supply rail
41
at the first node
51
and at the seventh node
57
. A third current source
133
is coupled to the second voltage supply rail
42
at the fifth node
55
and at the third node
53
. A fourth current source
134
is coupled to the voltage supply rail
42
at the fifth node
55
and at the sixth node
56
.
The final sub-stage
123
comprises a complementary pair of darlington transistors. The first set of darlington transistors is comprised of the ninth and tenth transistors
109
and
110
. The emitter of the ninth transistor
109
is coupled to the collector of the first transistor
101
at a ninth node
59
. The base and collector of the ninth transistor
109
are coupled at a tenth node
60
. The base of the tenth transistor
110
is coupled to the ninth node
59
, and the collector of the tenth transistor
110
is coupled to the first voltage supply rail
41
at the first node
51
.
The second set of darlington transistors is comprised of the eleventh and twelfth transistors
111
and
112
. The emitter of the eleventh transistor
111
is coupled to the collector of the fifth transistor
105
at an eleventh node
61
. The base and collector of the eleventh transistor
111
are coupled to the base and collector of the ninth transistor
109
at the tenth node
60
. The base of the twelfth transistor
112
is coupled to the eleventh node
61
, and the collector of the twelfth transistor
112
is coupled to the second voltage supply rail
42
at the fifth node
55
. The twelfth node
62
couples the emitter of the tenth transistor
110
to the emitter of the twelfth transistor
112
. An output terminal
91
is coupled to the twelfth node
62
. The twelfth node
62
also interconnects the output terminal
91
to the g
m
cell input
121
. The configuration of the ninth transistor
109
and eleventh transistor
111
of the first embodiment of the present invention is also referred to as type I biasing.
A second embodiment of the present invention is disclosed in FIG.
8
. The second embodiment is also referred to as type II biasing of the output transistors. In this second embodiment, the collectors of the ninth transistor
109
and the eleventh transistor
111
are not coupled at the tenth node
60
. The collector of the ninth transistor
109
is coupled to the second voltage supply rail V
ee
42
at the fifth node
55
and the collector of the eleventh transistor
111
is coupled to the first voltage supply rail V
cc
41
at the first node
51
. In this case the current gain from the collectors of
101
or
105
to the output node
91
is the average of β
n
and β
p
. This arrangement minimizes crossover distortion in the output signal. As used herein, β
n
refers to the beta of transistor
110
and β
p
refers to the beta of transistor
101
, where α=1 and λ=1; or β
n
refers to the beta of transistor
105
and β
p
refers to the beta of transistor
112
, where α=0 and λ=0, or, in the small signal context, where α=0.5 and λ=0.5, β
n
refers to the average of the beta of transistor
110
and transistor
105
and β
p
refers to the beta of the average of transistor
101
and transistor
112
, the relative contribution of each such pnp transistor and npn transistor to β
n
and β
p
varying proportionally with the variation in α and β.
FIGS. 9
,
10
and
11
illustrate different performance aspects of the present invention. Specifically,
FIG. 9
shows the linearity characteristics of the first embodiment of the present invention, specifically the first derivative (δV
o
/δV
i
) of the amplifier's DC transfer characteristic.
FIG. 10
shows the linearity characteristics of the first embodiment of the present invention using a DMT signal with missing tones.
FIG. 11
shows the linearity characteristics of the first embodiment of the present invention in harmonic distortion form.
As shown in
FIG. 12
, in the first embodiment of the present invention a translinear loop is formed by the third transistor
103
, fourth transistor
104
, second transistor
102
and first transistor
101
. In operation, two sets of current flow into this first translinear loop which sets up a quiescent current through a branch
170
connected at the collector of the first transistor
101
. In addition, as shown in
FIG. 13
, a translinear loop is formed by the seventh transistor
107
, the eighth transistor
108
, the sixth transistor
106
and the fifth transistor
105
. Two sets of current flow in this second translinear loop which sets up a quiescent current through a branch
171
connected at a collector of the fifth transistor
105
. These two quiescent currents establish the bias currents for the respective tenth transistor
110
and for the twelfth transistor
112
by means of translinear principles in the loop formed by the ninth transistor
109
, eleventh transistor
111
, tenth transistor
110
and twelfth transistor
112
.
When an input voltage is applied to the input g
m
cell
121
, an error voltage appears across the output of the input g
m
cell
121
and an error current is produced. Advantageously, the cross-connection of the collector of the second transistor
102
to the emitter of the sixth transistor
106
, and the collector of the sixth transistor
106
to the emitter of the second transistor
102
ensures that whatever proportion of the error current flowing into the emitters of the second transistor
102
and sixth transistor
106
also flows back out through the collectors of the second transistor
102
and the sixth transistor
106
into the bases of the first transistor
101
and the fifth transistor
105
. Advantageously, there is no net signal loss in the pre-driver sub-stage translinear loops.
The error currents into the bases of the first transistor
101
and the fifth transistor
105
, are thus gained up by the pre-driver sub-stage contribution of β
p
and β
n
These error currents flow into the translinear loop formed by the ninth transistor
109
, eleventh transistor
111
, tenth transistor
110
and twelfth transistor
112
. These amplified error currents can only flow into the bases of the tenth transistor
110
and twelfth transistor
112
, where they are amplified by the final sub-stage contribution of β
n
and β
p
respectively. Thus, irrespective of whether the error current flows through the top or the bottom route through the circuit it appears at the output terminal
91
amplified by approximately β
n
multiplied by β
p
, where it develops a correction voltage across the load resistor to move the output to a point of minimum error of the feedback into the input g
m
cell
121
.
Output Transistor Biasing
FIG. 14
is a circuit diagram of the final sub-stage
123
of the first embodiment of the operational amplifier output stage in a no load configuration.
FIG. 14
illustrates type I biasing of the output transistors as follows: Current is flowing into the collector of the tenth transistor
110
, referred to as I
Q110C
, and current is flowing out of the collector of the twelfth transistor
112
, referred to as I
Q112C
. The emitter area of the ninth transistor
109
is referred to as A
Q109
and the emitter area of the eleventh transistor
111
is referred to as A
Q111
. The emitter area of the tenth transistor
110
is referred to as A
Q110
and the emitter area the twelfth transistor
112
is referred to as A
Q112
. Two current sources I
135
and I
136
are shown thereon:
Therefore:
for β
n
and β
p
>>1 and VA
n
and VA
p
>>1,
I
Q110C
=I
Q112C
=I
C
.
Therefore,
and further
FIG. 15
is a circuit diagram of the final sub-stage
123
of the first embodiment of the present invention with a load
43
. Type I biasing of the output transistors is thus described as follows: When a load
43
is connected to the output terminal
91
and the following do not hold:
β
n
and β
p
>>1, or
VA
n
and VA
p
>>1, or
there is an imbalance between current I
Q110C
and I
Q112C
.
Since current I
Q110C
is not equal to I
Q112C
, an error current flows in the load
43
thus developing an offset voltage V
error
across the load
43
.
When the difference in current in the final sub-stage transistors
110
and
112
, are taken care of by a localized feedback system, the characteristics of the final sub-stage can be seen as follows: The signal current changes the bias currents by increasing the current through the top circuit and decreasing the current through the bottom circuit. In the limiting case for large current through the top circuit and minuscule current through the bottom circuit, and α is equal to one (1), the translinear loop cuts off the twelfth transistor
112
and all of the signal current flows into the base of the tenth transistor
110
where it appears in the load
43
as follows:
β
n
*(δI
sig
).
Conversely, for large signal current through the bottom circuit and minuscule current at the top circuit, and where a is equal to 0, the translinear loop is again cut off and all of the signal current flows into the base of the twelfth transistor
112
where it appears in the load
43
as follows:
β
p
*(δI
sig
).
For small signal currents, where a is close to half (0.5), the translinear loop is active, that is a quiescent current is flowing through both the tenth transistor
110
and the twelfth transistor
112
, the signal current splits with α and (1−α) multiplied by δI
sig
flowing into the base of the twelfth transistor
112
. Thus the current gain from input to output is as follows:
α*β
n
+(1−α)*β
p
,
for all cases of a such that α is equal to or greater than zero and equal to or less than 1.
As shown in the graph of
FIG. 16
, the gain will transition from β
p
to β
n
through the translinear region.
FIG. 17
is a circuit diagram of the final sub-stage of the second embodiment of an operational amplifier in a no load configuration.
FIG. 17
illustrates type II biasing of the output transistors as follows:
The current through branch
70
is: β
p
*i
b
.
The current through branch
75
is: I−β
p
*i
b
.
The current through branch
72
is: β
n
*i
b
.
The current through branch
74
is: I−β
n
*i
b
.
The current through branch
76
is: β
n
*I−β
p
*β
n
*i
b
.
The current through branch
77
is: β
p
*I−β
n
*β
p
*i
b
.
As can be seen, an offset current (β
n
-β
p
)*I will develop an offset voltage in a load, and would self correct in the localized feedback circuit.
Referring to
FIG. 18
, which illustrates type II biasing of the output transistors:
The current through branch
75
is: I+δI−β
p
i
b
.
The current through branch
74
is: I+δI−β
n
i
b
.
The current is through branch
76
is: (β
n
*I)+(β
n
*δI)−(β
n
*β
p
*i
b
).
The current through branch
77
is: (β
p
*I)−(β
p
*δI)−(β
n
*β
p
*δI).
Thus, the output current through branch
78
is: i
o
=I*(β
n
−β
p
)+(β
n
+β
p
)*δI.
This result theoretically indicates no crossover distortion in the output, albeit with an offset.
FIGS. 19
,
20
and
21
illustrate the-current drive relationships of the type I and type II biasing schemes.
Pre-Driver Biasing
FIG. 22
is a circuit diagram illustrating one technique of bias current generation for a rail to rail output stage in a conventional operational amplifier. The main disadvantage of this configuration is that current gain from the input to the output is only a single β. Also this type of stage will have a large output impedance making compensation more difficult given variation in a load's impedance. In the first and second embodiments of the present invention, translinear principles are used to establish the bias currents in the pre-driver stage.
Referring back to
FIGS. 7 and 8
, if there is a slight mismatch in the currents through the second transistor
102
and sixth transistor
106
due to an Early voltage mismatch between these two devices, a cascode on the second transistor
102
and the sixth transistor
106
will remedy this effect.
Also referring to
FIGS. 7 and 8
, assume that feedback introduces a correction term into the circuit to establish equality of collector currents in the first transistor
101
and the fifth transistor
105
, then:
I
Q101C
=I
Q105C
=I
Qpre
Thus, from translinear principles:
I
Q106C
=I
Q102C
=I
131
; 3.
(derived from equation 1);
(derived from equation 2);
(derived from equations 3, 4 and 5)
Referring to the operational amplifier output stage
100
shown in
FIG. 7
, the change in current in the first transistor
101
and the fifth transistor
105
in response to a change in input current is computed as follows: The input current change takes the form of an equal but opposite change in I
X
and I
Y
given that the difference current between I
X
and I
Y
(i.e. δI) has to be divided between the bases of the first transistor
101
and the fifth transistor
105
. Therefore,
I
o
=I
Y
−α*δI*β
p
I
Y
−(1−α)δ
I−β
n
δ
I
o
=−*αδI*β
p
−(1−α)δ
I*β
n
;
δ
I
o
=−δI
(α*β
p
+(1−α)−β
n
).
Where α a is greater than zero and less than one, the value of α indicates the proportion of δI delivered into the bases of each of the pre-driver transistors, first transistor
101
and fifth transistor
105
.
Where a is approximately zero, I
X
has significantly increased and I
Y
has significantly decreased by equal and opposite quantities. The base-emitter voltage is large in the second transistor
102
and small in the sixth transistor
106
. The second transistor
102
cuts off and all of the difference current between I
X
and I
Y
(i.e. δ
1
) flows into the base of the fifth transistor
105
. This gives a current gain in the circuit of β
n
.
Where α is approximately equal to one, the opposite of where α is approximately equal to zero occurs. Where I
X
significantly decreases, I
Y
significantly increases causing all difference current, δI, to flow into base of the first transistor
101
, resulting in a current gain of β
p
.
Where α is greater than zero but less than one, the pre-driver sub-stage 122 is in translinear mode. The difference current is split in varying proportion into the first transistor
101
and the fifth transistor
105
. Thus, δI
o
/δI=α*β
p
+(1−α)*β
n
.
Referring to
FIG. 23
, the DC response of the pre-driver sub-stage
122
of the present invention is shown.
In connection with the coupling of the pre-driver sub-stage
122
to the final sub-stage
123
, the biasing scheme of the pre-drivers and the biasing scheme of the final drivers of the present invention have the advantageous property of not absorbing any signal current. All of the signal current is delivered directly into the bases of the transistors, and none is lost in translinear loops.
The current gain from the input to the output has approximately the form:
δ
I
o
≈β
n
*β
p
*∂I
in
.
Feedback Analysis
When feedback is locally applied by means of some localized feedback circuit, the errors are corrected within a very tight loop which will respond much more quickly than relying on the amplifier overall feedback loop. This localized feedback provides the present invention with high speed capabilities.
Four (4) possibilities are presented: (i) current feedback, transitional β output (ii) current feedback, constant β output (iii) voltage feedback, transitional β output, and (iv) voltage feedback, constant β output.
FIG. 24
is a circuit diagram of a first embodiment of the present invention with a current feedback circuitry.
FIG. 25
is a circuit diagram of the first embodiment of the present invention with a voltage feedback circuitry.
When the input g
m
cell
121
takes the form of a complementary differential pair, the inherent RHPZ appearing when the pre-driver sub-stage is Miller compensated vanishes as the feed forward term contributing to the RHPZ is pulled back out by the differential pair.
FIG. 28
illustrates the output in a closed loop configuration with [greater than unity gain] driving a heavy load over a wide voltage range. In all cases the worst case non-linearity is approximately plus/minus 1 part in 1000. For the current feedback, constant β output, cross-over distortion is virtually eliminated.
FIG. 29
is a circuit diagram of the first embodiment of the present invention with a compound darlington output stage using type I biasing. A generalized evaluation of this circuit is as follows:
Referring to current through branches
150
,
152
,
154
156
,
158
,
160
,
172
and
174
in FIG.
29
:
Current through branch
150
is I
LTP
; where I
LTP
refers to the current through current source
131
.
Current through branch
152
is: −α·δI.
Current through branch
154
is:
Current through branch
156
is:
Current through branch
158
is:
Current through branch
160
is: I
biasp
−β
Q101
·α·δI.
Current through branch
162
is approximately equal to:
Current through
172
is: −λ·δI(β
Q101
·α+β
Q105
(1−α)).
Current through
174
is: −λ·δI·(β
Q101
·α+β
Q105
(1−α))+I
bias out
.
Referring to current through branches
151
,
153
,
155
,
157
,
159
,
161
,
163
,
173
and
175
:
Current through branch
151
is I
LTP
; where I
LTP
refers to the current through current source
134
which is the same as the current through current source
131
.
Current through branch
153
is: (1−α)δI
Current through branch
155
is:
Current through branch
157
is:
Current through branch
159
is:
Current through branch
161
is: I
bias p
+β
Q105
·(1−α)δI.
Current through branch
163
is:
Current through branch
173
is: (1−λ)·δI(β
Q101
·α+β
Q105
(1−α).
Current through
175
is: (1−λ)−δI(β
Q101
·α+β
Q105
(1−α)+I
bias out
.
Therefore:
I
out
=−λ•δI•β
Q110
• (β
Q101
•α+β
Q105
(1−α))−)1−λ)•δI•β
Q112
(β
Q101
•α+β
Q105
(1−α)).
In a first case where I
out
is large and positive, and load conduction is through transistor
110
and transistor
101
, where α=1, λ=1, then:
I
out
=−δI·β
Q110
·β
Q101
In a second case where lout is large and negative, and load conduction is through transistor
112
and transistor
105
, where α=0, λ=0, then:
I
out
=−δI·β
Q112
·β
Q105
In a third case where I
out
is very small through the cross-over point, and load conduction is through transistor
110
and transistor
112
, where α≈0.5, λ≈0.5, then:
Thus, for β
Q112
=β
Q101
=β
p
and β
Q110
=β
Q105
=β
n
FIG. 30
is a circuit diagram of the first embodiment of the present invention with a compound darlington output stage using type I biasing and a differential pair input g
m
cell. A specific evaluation of this circuit is as follows:
Referring to the current through branches
140
,
142
,
152
,
160
,
172
and
174
in FIG.
30
:
The current through branch
140
is:
I
131
+δI
(½−α)
The current through branch
142
is:
The current through branches
152
,
160
,
172
and
174
are the same as that in the equivalent numbered branches in FIG.
29
.
Referring to the current through branches
141
,
143
,
153
,
161
,
173
, and
175
in FIG.
30
:
The current through branch
141
is:
I
134
+δI
(½−α)
The current through branch
143
is:
The current through branches
153
,
161
,
173
and
175
are the same as that in the equivalent numbered branches in FIG.
29
.
Therefore:
I
out
=−λ·δI·β
Q110
·(β
Q101
·α+β
Q105
(1−α))−(1−λ)·δ
I
Q112
(β
Q101
·α+β
Q105
(1−α)).
Referring to
FIG. 30
, and as noted in
FIG. 29
, in a first case, where I
out
is large and positive, and load conduction is through transistor
110
and transistor
101
, where α=1, λ=1, then:
I
out
=−δI·β
Q110
·β
Q101
In a second case where I
out
is large and negative, and load conduction is through transistor
112
and transistor
105
, where α=0, λ=0, then:
I
out
=−δI·β
Q112
·β
Q105
In a third case, where case I
out
is very small through the cross-over point, and load conduction is through transistor
110
and transistor
112
, where α≈0.5, λ≈0.5, then:
Thus, for β
Q112
=β
Q101
=β
p
and β
Q110
=β
Q105
=β
n
where 0<α<1;
and 0<λ<1
I
biasp
and I
biasout
are established using translinear principles.
Compensation
FIGS. 31
,
32
,
33
and
34
show the various types of compensation techniques that can be used with the present invention.
FIG. 31
is a half circuit showing the current feedback case with small signal AC. The circuit is a 2 voltage gain stage amplifier with voltage gain being developed at nodes
63
and
64
. The circuit lends itself to classic Miller compensation as shown in FIG.
31
.
Referring to
FIG. 32
, the resistor
81
eliminates the right half plane through the compensation capacitor
85
. At the quiescent condition, the value is the reciprocal of the transconductance of the first transistor
101
.
FIG. 33
illustrates the voltage feedback case. Referring to the circuit in
FIG. 33
, there are two (2) loops to be compensated, inner loop
2
and outer loop
1
. As can be seen in
FIG. 32
, similar to the current feedback implementation, the system is a 2 voltage gain stage amplifier with voltage gain at nodes
63
and
64
. This circuit can also be Miller compensated. There is no concern with RHPZ because the differential transistor
113
draws the feed forward signal out.
Implementation
It is noted that the voltage feedback implementation can only be used for gain greater than 1. Further, the current feedback implementation can be used for if arbitrary gain. All four implementations can be used as a stand alone amplifier configuration.
FIG. 35
illustrates how gain from the present invention can be preserved where additional lower frequency precision is required.
The advantages of the present invention over conventional operational amplifier output stages is significantly higher linearity for the same supply current or linearity equal to the conventional operational amplifiers.
The current gain obtained in the error correction loop of each of the first and second conventional operational amplifiers is only a single current gain whereas the current gain of the present invention is up to β
2
. Further, the DC non-linearity of conventional amplifiers is approximately 2 parts per 1000, a factor of 25 worse than the present invention. Reduced current draw is one of the advantages afforded by the design of each of the present invention.
The numerous innovative teachings of the present application are described with particular reference to the disclosed embodiments. However, it should be understood that these embodiments provide only two examples of the many advantageous uses and innovative teachings herein. Various alterations, modifications and substitutions can be made to the disclosed invention without departing in any way from the spirit and scope of the invention, as defined in the claims that follow. For example, although the embodiments have been presented herein with reference to particular transistor types, voltage and current polarities and methods of coupling, the present inventive structures and characteristics are not necessarily limited to particular transistor types, polarities or methods of coupling, as used herein. It should be understood the embodiment used hereinabove can easily be implemented using many diverse transistor types, polarities and methods of coupling so long as the combinations achieve a high beta, high speed operational amplifier output stage with reduced current draw and extended bandwidth.
Claims
- 1. An operational amplifier output stage, comprising:a pre-driver sub-stage and a final sub-stage, the pre-driver sub-stage having a plurality of transistors being biased by a plurality of current sources, the pre-driver sub-stage being adapted to accept a current signal (δIin) from an input gm cell; the pre-driver stage being further adapted to provide biasing to a plurality of transistors in the final sub-stage; and the pre-driver sub-stage being coupled to the final sub-stage so as to provide current gain from input to output of δIo≈βn*βp*δIin; and localized feedback circuitry enclosed in the output stage operable to correct signal errors more rapidly than an overall amplifier feedback loop, thereby improving the speed characteristics of the operational amplification output stage.
- 2. The operational amplifier output stage recited in claim 1, further comprising inherent RHPZ cancellation operable to extend bandwidth.
- 3. The operational amplifier output stage recited in claim 1, wherein the plurality of transistors in the final sub-stage comprises 4 transistors arranged as a complementary pair of differential transistors enclosed in a localized feedback system.
- 4. The operational amplifier output stage recited in claim 1 for use in an integrated circuit.
- 5. The operational amplifier output stage recited in claim 1 for use in a DSL driver.
US Referenced Citations (8)