Claims
- 1. A capacitor anode comprising niobium powder, wherein said anode has a capacitance of at least 65,000 CV/g, and said anode is formed at a voltage of less than about 60 volts.
- 2. The capacitor anode of claim 1, wherein said anode has a capacitance of from 65,000 to about 250,000 CV/g.
- 3. The capacitor anode of claim 1, wherein said anode has a capacitance of from about 75,000 to about 250,000 CV/g.
- 4. The capacitor anode of claim 1, wherein said anode has a capacitance of from about 100,000 to about 250,000 CV/g.
- 5. The capacitor anode of claim 1, wherein said anode has a capacitance of from about 125,000 to about 250,000 CV/g.
- 6. The capacitor anode of claim 1, wherein said anode has a capacitance of from about 100,000 to about 210,000 CV/g.
- 7. The capacitor anode of claim 1, wherein said anode is formed at a voltage of from about 30 to about 50 volts.
- 8. The capacitor anode of claim 1, wherein said niobium powder comprises flaked niobium powder.
- 9. A capacitor anode comprising niobium powder having a BET surface area of at least about 5.5 m2/g, wherein said anode is formed at a voltage of less than about 60 volts.
- 10. The capacitor anode of claim 9, wherein said niobium powder has a BET surface area of at least about 7.0 m2/g.
- 11. The capacitor anode of claim 9, wherein said niobium powder has a BET surface area of at least about 10 m2/g.
- 12. The capacitor anode of claim 9, wherein said niobium powder has a BET surface area of from 6.0 m2/g to about 12 m2/g.
- 13. The capacitor anode of claim 1, wherein said niobium powder is sintered at a temperature of from about 1200° C. to about 1750° C.
- 14. The capacitor anode of claim 1 having a phosphorus level of less than about 400 ppm.
- 15. The capacitor anode of claim 1, wherein said niobium powder is nitrogen doped.
- 16. The capacitor anode of claim 1, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 17. The capacitor anode of claim 1, wherein said niobium powder has nitrogen present in an amount of from about 100 ppm to about 5,000 ppm.
- 18. The capacitor anode of claim 2, wherein said niobium powder is nitrogen doped.
- 19. The capacitor anode of claim 3, wherein said niobium powder is nitrogen doped.
- 20. The capacitor anode of claim 4, wherein said niobium powder is nitrogen doped.
- 21. The capacitor anode of claim 5, wherein said niobium powder is nitrogen doped.
- 22. The capacitor anode of claim 6, wherein said niobium powder is nitrogen doped.
- 23. The capacitor anode of claim 7, wherein said niobium powder is nitrogen doped.
- 24. The capacitor anode of claim 8, wherein said niobium powder is nitrogen doped.
- 25. The capacitor anode of claim 9, wherein said niobium powder is nitrogen doped.
- 26. The capacitor anode of claim 10, wherein said niobium powder is nitrogen doped.
- 27. The capacitor anode of claim 2, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 28. The capacitor anode of claim 3, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 29. The capacitor anode of claim 4, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 30. The capacitor anode of claim 5, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 31. The capacitor anode of claim 6, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 32. The capacitor anode of claim 7, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 33. The capacitor anode of claim 8, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 34. The capacitor anode of claim 9, wherein said niobium powder has at least about 100 ppm of nitrogen present.
- 35. The capacitor anode of claim 10, wherein said niobium powder has at least about 100 ppm of nitrogen present.
Parent Case Info
[0001] This application is a continuation of U.S. patent application Ser. No. 09/310,322, filed May 12, 1999, now allowed.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09310322 |
May 1999 |
US |
Child |
10061497 |
Feb 2002 |
US |