Claims
- 1. A process for reducing high current density dendrite formation and controlling high current density roughness, grain size and orientation of a zinc coating comprising applying said coating to a cathode substrate immersed in a composition of matter consisting essentially of an acidic aqueous zinc salt and a sulfonated condensation product of naphthalene and formaldehyde as an antidendritic agent, and passing a current of from about 525 to about 4,000 ASF from an anode in said composition to said cathode in said composition for a period of time sufficient to deposit a zinc coating on said cathode whereby said zinc coating shows reduced high current density dendrite formation, and controlled high current density roughness, grain size and orientation.
- 2. The process of claim 1 wherein the current density is from about 525 to about 3,000 ASF.
- 3. The process of claim 2, wherein said sulfonated condensation product comprises a methoxylated sulfonated condensation product of naphthalene and formaldehyde.
- 4. The process of claim 2, wherein said zinc salt comprises a zinc salt of a sulfur acid.
- 5. The process of claim 2, wherein said zinc salt comprises zinc sulfate.
- 6. The process of claim 1, wherein said sulfonated condensation product further comprises a methoxylated sulfonated condensation product of naphthalene and formaldehyde.
- 7. The process of claim 1, wherein said zinc salt comprises a zinc salt of a sulfur acid.
- 8. The process of claim 1, wherein said zinc salt comprises zinc sulfate.
RELATED APPLICATIONS
The present application is a continuation application of U.S. patent application Ser. No. 09/752,040 filed Feb. 9, 1998, pending, which is a divisional of U.S. patent application Ser. No. 08/754,381, filed Nov. 21, 1996 now U.S. Pat. No. 5,718,818, which is a Divisional Application of U.S. patent application Ser. No. 08/388,844, filed Feb. 15, 1995, now abandoned, the contents of all applications being incorporated herein by reference in their entirety.
US Referenced Citations (18)
Foreign Referenced Citations (1)
Number |
Date |
Country |
8302290 |
Jul 1983 |
WO |
Continuations (1)
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Number |
Date |
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Parent |
09/752040 |
Feb 1998 |
US |
Child |
09/645936 |
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US |