1. Field of the Disclosure
The present invention relates to general photovoltaic (PV) cells, and more particularly, to very high efficiency but low cost triple-junction solar cells, GaInP/GaAs/Si, by mechanically stacking a GaInP/GaAs dual-junction solar cell with a Si single junction solar cell, and thereafter by lifting off the GaInP/GaAs/Si triple-junction solar cell from the GaAs substrate.
2. Brief Description of Related Technology
The energy conversion efficiency of GaInP(1.85 eV)/GaAs(1.42 eV) dual junction solar cells can be as high as 30% under a standard AM1.5 solar spectrum W. However, only the photons with their energy larger than the band gap of GaAs (1.424 eV) can be captured in this structure. The amount of absorbable photons is only 45% of total photons in the solar spectrum. Therefore, it needs another low bandgap cell integrated with a GaInP/GaAs dual junction cell to harvest more photons. It is well known that GaInP(1.85 eV)/GaAs(1.42 eV)/Ge(0.67 eV) is the most well-developed triple junction structure because of nearly exact lattice match for all three of these materials. However, the bottom Ge cells made from Ge substrates with thickness more than 100 mm are really high cost. Also, the band gap of Ge (0.67 eV) is much smaller than the 1.0 eV which is the optimal bandgap for current match to a GaInP/GaAs dual-junction solar cell. And the Ge cell as the bottom sub-cell in the GaInP/GaAs/Ge triple junction only can contribute 0.2V open-circuit voltage. Therefore, the amount of efficiency increased by adding the Ge cell is very small. The recorded efficiency of this structure is only 31.5% under a standard AM1.5 solar spectrum [2]. On the other hand, the current match condition for the bottom cell can also be achieved by In0.3Ga0.7As alloy (bandgap equal to 1.0 eV) with 4% lattice mismatch with GaAs and GaInP. However, the defects in In0.3Ga0.7As caused by the strain of lattice mismatch also reduce its open-circuit voltage. In this invention, the processes of fabricating GaInP/GaAs/Si triple junction solar cell are disclosed, in which Si sub-cell can contribute the open-circuit voltage as high as 0.7V. Therefore, it can achieve the conversion efficiency about 36% under a standard AM1.5 spectrum, and more than 45% under concentration light. On the other hand, the manufacturing cost is significantly reduced by replacing Ge substrates by Si, and reusing the GaAs substrate.
The technology disclosed in U.S. Patent Pub. No. 20060021565A1 [3] used a direct semiconductor-semiconductor bonding process to join a GaInP/GaAs dual cell and a Si cell together. It required 1) ultra-clean surfaces for both GaAs and Si, 2) high temperature, and 3) high pressure for successful bonding. Furthermore, the difference of thermal expansion rate between GaAs and Si degraded the bonding strength.
In order to simplify the procedure and improve the reliability of GaAs/Si bonding, this invention disclosed a method to mechanically stack a GaInP/GaAs dual cell with Si a cell by using metal-metal bonding.
In one embodiment, a method of fabricating GaInP/GaAs/Si triple junction solar cells by epitaxy lift-off and mechanical stack techniques as disclosed in this file. First, a GaInP(1.85 eV)/GaAs(1.42 eV) dual-junction cell is fabricated on a GaAs substrate, and a Si single junction is fabricated on a Si substrate. The Si single junction cell and the GaInP/GaAs dual-junction cell are bonded robustly by metal-metal welding. The welding process can be achieved by using mechanic pressure, or thermal, or cold-weld bonding, or their combinations. A buffer layer is disclosed to insert between to GaAs and Si to provide excellent electrical, thermal and optical joint. Furthermore, in the procedure of growing one of optimized buffer layer, GaP, the Si p-n junction as a fully functional solar cell is formed simultaneously, which further reduces the manufacturing cost for this technology. With the excellent thermal, electrical and optical joint, the optimal current-match as high as 13.3 mA/cm2 can be achieved under standard AM1.5 spectrum while the sum of open-circuit voltages is 3.1V for GaInP/GaAs/Si triple junction. The total efficiency can be as high as 36% under a standard AM1.5 solar spectrum and more than 45% under concentration light. On the other hand, the manufacturing cost is significantly reduced by replacing Ge substrates by Si, and reusing the GaAs substrate.
For a complete understanding of the disclosure, reference should be made to the following detailed description and accompanying drawing figures, in which like reference numerals identify like elements in the figures, and in which:
While the disclosed methods and configuration are susceptible of embodiments in various forms, there are illustrated in the drawing (and will hereafter be described) specific embodiments of the invention, with the understanding that the disclosure is intended to be illustrative, and is not intended to limit the invention to the specific embodiments described and illustrated herein.
In the present disclosure, numerous specific details are provided such as examples of apparatus, process parameters, materials, process steps, and structures to provide a thorough understanding of embodiments of the invention. Persons of ordinary skills in art will recognize, however, that the invention can be practiced without one or more of specific details. In other words, well-known details are not shown or described to avoid obscuring aspects of the invention.
Once both metal pattern 102a and 102b are fabricated on the Si single junction solar cell and GaInP/GaAs dual-junction solar cell, they are aligned by a mask aligner, a bonding machine, or wafer stepper equipped with an infrared light source. The solid metal-metal joint can be achieved by mechanical, cold or thermal bonding. Thereafter, the stacked GaInP/GaAs/Si triple junction is illustrated in
It should be pointed out the space gap between GaAs and Si in device shown in
The steps of making a Si sub-cell 110 are illustrated in
The Si sub-cell 110 with a GaP buffer layer 210 and the metal pattern 102a is then welded together with a GaInP/GaAs dual cell, as shown in
In order to maximize the conversion efficiency of GaInP/GaAs/Si triple junction, the current match condition should be achieved by tuning the thickness of absorption layers in the GaInP sub-cell 130 and the GaAs sub-cell 120 or tuning the bandgap of the materials in absorption layers of GaAs sub-cell 120 and GaInP sub-cell 130. Under the AM1.5D spectrum, the maximum output current is 13.3 mA/cm2, the open-circuit voltages can be as high as 1.4V, 1.0V, and 0.7V for GaInP sub-cell 130, GaAs sub-cell 120 and Si sub-cell 110 respectively. And a fully functional and high efficiency GaInP/GaAs/Si triple junction is therefore achieved by the technologies disclosed in this invention.
This application claims the priority and benefit of U.S. Provisional Patent Application No. 61/431,480, entitled “High Efficiency and Low Cost GaInP/GaAs/Si Triple Junction by Epitaxy Lift-off and Mechanical Stack”, filed Jan. 11, 2011 by Weiming Wang, Xin Zhu and Jun Yang, the entire disclosure of which is hereby expressly incorporated by reference.
Number | Date | Country | |
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61431480 | Jan 2011 | US |