Patent Application
20220037546
The current best CdTe solar cells have a demonstrated efficiency of 19.6%, which is considerably below the maximum achievable value of 33.7%. Of the three factors—open-circuit voltage (VOC), short-circuit current density (JSC) and fill-factor (FF)—that determine the efficiency, only JSC has reached close to the theoretical limit. The inability to achieve high p-type doping and ohmic back-contacts are hypothesized to negatively impact VOC and FF. The use of copper (Cu) as a back contact increases the local p-doping by forming Cu2Te and thus provides a tunnel barrier for hole extraction. Still the contact is non-ohmic, because of the large difference between the work function of Cu (4.5 eV) and p-CdTe (≈5.7 eV). Additionally, Cu diffused to the p-n junction reduces VOC. Efforts for Cu-free back contacts such as molybdenum oxide (MoO3-x) with a work function of 6.9 eV either introduced series resistance or decreased FF due to formation of compounds at the CdTe/MoO3-x interface.
The present inventor has recognized that is would be desirable to increase the efficiency of solar cells by providing an improved contact arrangement.
The present inventor has recognized that the inability of prior CdTe solar cells to collect holes results in low efficiency.
The present inventor has recognized that an inert material with a large work function and low resistivity is advantageous to achieve ohmic contact (a non-rectifying electrical junction: a junction between two conductors that has a linear current-voltage (I-V) curve as with Ohm's law), and thus improve efficiency.
An exemplary embodiment solar cell includes a doped CdTe layer; a graphene layer over the CdTe layer; and metal contacts over the graphene layer. Advantageously, the metal contacts are composed of Pt or MoO3-x.
The doped CdTe layer can be composed of a p-doped CdTe layer, and the solar cell comprises an n-doped CdS layer beneath the CdTe layer.
The solar cell can include a conducting oxide layer beneath the CdS layer. The conducting oxide layer can be composed of SnO2:F.
The solar cell can include a glass layer beneath the conducting oxide layer.
The graphene contacting the MoO contacts particularly alleviates the issue of the inability of prior CdTe solar cells to collect holes and could increase efficiency by about 5%.
The work function of intrinsic graphene is X4.5 eV and is known to vary as much as ±1.2 eV with electrical or contact doping. With an appropriate contact metal, such as Pt (with work function of 5.9 eV) or MoO3-x (with work function of 6.9 eV) the graphene work function can be matched or lowered to that of p-doped CdTe. Graphene is inert and attaches to the surface only by van der Waals interaction, thus avoiding complicated compound formation. Graphene has high mobility and with the heavy doping by the contact metal, its sheet resistance can be reduced to 30-50Ω (ohms). The MoO3 work function is much deeper than that of graphene and hence the electrons from graphene transfer to MoO3. Hence the graphene is now deficient of electrons and this is essentially hole doping of graphene. Low sheet resistance and matched work functions remove the barrier at the interface and thus improve efficiency.
Numerous other advantages and features of the present invention will be become readily apparent from the following detailed description of the invention and the embodiments thereof, and from the accompanying drawings.
While this invention is susceptible of embodiment in many different forms, there are shown in the drawings, and will be described herein in detail, specific embodiments thereof with the understanding that the present disclosure is to be considered as an exemplification of the principles of the invention and is not intended to limit the invention to the specific embodiments illustrated.
This application claims the benefit of U.S. Provisional Application Ser. No. 63/047,702, filed Jul. 2, 2020, which is herein incorporated by reference in its entirety.
Solar cells using a CdTe layer, and methods of fabricating such solar cells are disclosed in U.S. Pat. Nos. 10,340,405; 9,837,563; and 8,912,428, all herein incorporated by reference to the extent that the references are not contradictory to the present disclosure.
The work function of intrinsic graphene is ≈4.5 eV and is known to vary as much as ±1.2 eV with electrical or contact doping. With an appropriate contact metal, such as Pt (with work function of 5.9 eV) or MoO3-x (with work function of 6.9 eV) the graphene work function can be matched or lowered to that of p-doped CdTe. Graphene is inert and attaches to the surface only by van der Waals interaction, thus avoiding complicated compound formation. Graphene has high mobility and with the heavy doping by the contact metal, its sheet resistance can be reduced to 30-50Ω (ohms). Low sheet resistance and matched work functions remove the barrier at the interface and thus improve efficiency. The basic design is shown in
The work function p-CdTe is −5.9 eV. MoO3-x-covered graphene has a work function of −6 eV or more. The lower or matched work function enables efficient collection of holes and thus results in higher efficiency.
Table 1 indicates the calculated efficiency under various defect density and work function conditions. Note that matched work function (column 5) increases the efficiency by over 5.5% (compare 6th column of rows 1 and 3)
From the foregoing, it will be observed that numerous variations and modifications may be incorporated without departing from the spirit and scope of the invention. It is to be understood that no limitation with respect to the specific apparatus illustrated herein is intended or should be inferred.
This application claims the benefit of U.S. Provisional Application Ser. No. 63/047,702, filed Jul. 2, 2020.
| Number | Date | Country | |
|---|---|---|---|
| 63047702 | Jul 2020 | US |
