1. Field of the Invention
The present invention relates generally to cutting devices and, more particularly, to diode laser systems.
2. Description of Related Art
Prior art laser diode pumped lasers have been either end-pumped as demonstrated in
In accordance with one aspect of the present invention, a method of cutting or ablating hard tissue is disclosed, comprising the steps of providing a gain medium, a diode array, and an optical cavity; placing the gain medium and the diode array within the optical cavity so that the diode array is optically aligned to side pump the gain medium; activating the diode array to light pump the gain medium and generate laser light; and directing the laser light onto the hard tissue to cut or ablate the hard tissue.
In accordance with another aspect of the present invention, a method of cutting or ablating hard tissue, comprises the steps of providing a gain medium, a diode light pump, and an optical cavity; placing the gain medium and the diode light pump within the optical cavity so that the diode light pump is optically aligned to light pump the gain medium; activating the diode light pump to light pump the gain medium and generate laser light; and directing the laser light onto the hard tissue to cut or ablate the hard tissue.
According to another aspect of the invention, an apparatus for cutting or ablating hard tissue, comprises an optical cavity; a gain medium disposed within the optical cavity; a diode light pump disposed within the optical cavity and optically aligned to light pump the gain medium to generate laser light, wherein the generated laser light has a wavelength and power density suitable for cutting and ablating hard tissue.
Additional advantages and aspects of the present invention are apparent in the following detailed description and claims.
a is a schematic illustration of an end-pumped diode laser in accordance with the prior art;
b is a side-pumped diode laser according to the present invention;
a is a schematic top view of a laser head according to the present invention;
b is a schematic side view of a laser head according the the present invention;
a shows the population inversion in a CW pumping regime according to the present invention;
b shows the resonator Q due to the Q-switch hold-off according to the present invention;
c shows the resulting laser pulse from
a shows the quasi CW current supplied to the pumping laser diode according to the present invention;
b shows the population inversion in the quasi CW pumping according to the present invention;
c shows resulting laser pulse from
Reference will now be made in detail to particular embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same or similar reference numbers are used in the drawings and the description to refer to the same or like parts. It should be noted that the drawings are in simplified form and are not to precise scale. In reference to the disclosure herein, for purposes of convenience and clarity only, directional terms, such as, top, bottom, left, right, up, down, over, above, below, beneath, rear, and front, are used with respect to the accompanying drawings. Such directional terms should not be construed to limit the scope of the invention in any manner.
Although the disclosure herein refers to certain illustrated embodiments, it is to be understood that these embodiments are presented by way of example and not by way of limitation. The intent of the following detailed description, although discussing exemplary embodiments, is to be construed to cover all modifications, alternatives, and equivalents of the embodiments as may fall within the spirit and scope of the invention as defined by the appended claims.
In accordance with one aspect of the present invention, a method of cutting or ablating hard tissue is disclosed, comprising the steps of providing a gain medium, a diode array, and an optical cavity; placing the gain medium and the diode array within the optical cavity so that the diode array is optically aligned to side pump the gain medium; activating the diode array to light pump the gain medium and generate laser light; and directing the laser light onto the hard tissue to cut or ablate the hard tissue.
In accordance with another aspect of the present invention, a method of cutting or ablating hard tissue comprises the steps of providing a gain medium, a diode light pump, and an optical cavity; placing the gain medium and the diode light pump within the optical cavity so that the diode light pump is optically aligned to light pump the gain medium; activating the diode light pump to light pump the gain medium and generate laser light; and directing the laser light onto the hard tissue to cut or ablate the hard tissue.
According to another aspect of the invention, an apparatus for cutting or ablating hard tissues, comprises an optical cavity; a gain medium disposed within the optical cavity; a diode light pump disposed within the optical cavity and optically aligned to light pump the gain medium to generate laser light, wherein the generated laser light has a wavelength and power density suitable for cutting and ablating hard tissue.
In any of the above aspects, the gain medium may comprises a laser rod, such as an Erbium-based laser rod. More particularly, the gain medium may comprises an Erbium-based crystalline laser rod for generating laser light in a range between 1.73 and 2.94 microns. The laser light can be generated in the TEMoo mode to overcome thermal effects. In accordance with a method of the present invention, the hard tissue can comprise, for example, tooth or bone tissue. Temporal pulse control can be used to attain a uniform temporal pulse pattern. In another embodiment, gain switching or Q-switching can be used to attain the uniform temporal pulse pattern. The diode light pump can comprise a diode array, and the diode array can be optically aligned to side pump the gain medium. The diode light pump can be placed within the optical cavity so that the diode array is optically aligned to side pump the gain medium.
Any feature or combination of features described herein are included within the scope of the present invention provided that the features included in any such combination are not mutually inconsistent as will be apparent from the context, this specification, and the knowledge of one of ordinary skill in the art.
The methods and apparatuses of this application are intended for use, to the extent the technology is compatible, with existing technologies including the apparatuses and methods disclosed in any of the following patents and patent applications: U.S. Pat. Nos. 5,741,247; 5,785,521; 5,968,037; 6,086,367; 6,231,567; and U.S. Ser. No. 09/848,010 (filed May 2, 2001), which incorporates by reference the disclosure of U.S. Pat. No. 6,288,499, all of which are assigned to BioLase Technology, Inc. and are incorporated herein by reference. The referenced U.S. Pat. No. 6,288,499 discloses full-width half-max ranges closer to beginnings than ends of pulses and full-width half-max values ranging from about 0.025 to about 250 microseconds.
The diode side pumped Erbium crystalline laser of the present invention may emit at wavelengths between 1.73 and 2.94 μm. The pumping may be accomplished by InGaAs laser diodes configured as bars or arrays emitting at 968 nm, and can be delivered in either a CW (continuous wave) or a QCW (quasi-continuous wave) mode of operation, at power levels that may begin at 40 W. With an optimized output coupling, the light-to-light efficiency can be at least 10% and can reach a magnitude up to 35%. One of the embodiments of this invention is that these efficiency magnitudes are higher than those which may have been previously attained, owing to the inventive design which seeks to maximize the pump-to-laser mode overlap and to optimize outcoupling, specifically tailoring the outcoupling to the pulse format or CW operation of the laser.
The oscillator of the present invention is a plano-plano resonator comprising a high reflectivity mirror and an outcoupling, partially transmitting mirror. For certain applications intracavity elements, such as an electro-optic or acousto-optic cell for Q-switching, or an etalon for wavelength tuning can be introduced. The laser can emit energy in, for example, one of the following modes of operation: CW, gain switched obtained by quasi-CW operation of the pump laser diode, and Q-switched by an acousto-optical (AO) device or Q-switched by an electro-optical (EO) device. Thermal management and temperature control are provided by either air and/or water cooling, with the possibility of using thermo-electric cooling.
In the category of the disclosed diode side pumped lasers included are the following crystals: Er:LiYF4 (Er:YLF) emitting at 1.73 μm on the Er3+4I13/24I15/2 transition; Er:LiYF4 emitting at 2.80 μm on the Er3+4I11/24I13/2 transition; Er:Y3Sc2GasO12 (Er:YSGG) emitting at 2.79 μm on the Er3+4I11/24I13/2 transition; Er:Gd3Sc2GasO12 (Er:GSGG) emitting at 2.8 μm on the Er3+4I11/24I13/2 transition; Er:Gd3GasO12 (Er:GGG) emitting at 2.82 μm on the Er3+4I11/24I13/2 transition; Er,Tm:Y3Al5O12 (TE:YAG) emitting at 2.69 μm on the Er3+4I11/24I13/2 transition; Er:KYF4 emitting at 2.81 μm on the Er3+4I11/24I13/2 transition; Ho,Yb:KYF4 emitting at 2.84 μm on the Ho3+5I65I7 transition; Er:Y3Al5O12 (Er:YAG) emitting at 2.94 μm on the Er3+4I11/24I13/2 transition; Er:Y3AlO3 (Er:YALO) emitting at 2.71 μm on the Er3+4I11/24I13/2 transition; Er:KGd (WO4)s (Er:KGW) emitting at 2.8 μm on the Er3+4I11/24I13/2 transition; Er:KY(WO4)s (Er:KYW); Er:Al3O3 emitting on the Er3+4I11/24I13/2 transition; Er:Lu3O3 emitting at emitting at 2.7 μm on the Er3+4I11/24I13/2 transition; Er:CaF2 emitting at 2.75-2.85 μm on the Er3+4I11/24I13/2 transition; Cr,Tm,Er:Y3Al5O12 (CTE:YAG) emitting at 2.7 μm on the Er3+4I11/24I13/2 transition; Er:BaLu2F8 emitting at 2.8 μm on the Er3+4I11/24I13/2 transition; Er:BaY2F8 (Er:BYF) emitting at 2.7 μm on the Er3+4I11/24I13/2 transition; and Cr:ZnSe emitting at 2-3 μm.
Due to their efficient interaction with biological tissue and water, these lasers are useful as surgical instruments, in the areas of, for example, dental surgery, orthopedic surgery, tissue ablation, bone cutting and soft tissue surfacing. Particular application may include use of the laser for expansion of atomized water or fluid particles above a target surface for mechanical cutting or ablation, such as disclosed in U.S. Pat. No. 5,741,247, entitled Atomized Fluid Particles for Electromagnetically Induced Cutting, and U.S. Pat. No. 5,785,521, entitled Fluid Conditioning System, the contents of which are expressly incorporated herein by reference.
Another embodiment of the side diode pumped erbium lasers and Ho,Yb:KYF4 laser is that when operated in pulses, the pulsed format is highly repetitive in time and intensity. This performance can facilitate precise and predictable cutting, and can improve cutting efficiency. In dental and medical applications, this feature is consistent with less heat or thermal denaturation of the tissue, which can provide for quicker healing.
The present invention is configured as shown in
Regarding the present invention's application of the side-pumped configuration to optimize dental and medical processes by efficient delivery of the laser to the target and minimal thermal process, optimization is accomplished by radiating the target with a train of well regulated pulses, as shown in
The Q-switch temporal trace is shown in
The gain switch temporal trace is shown in
As mentioned above, particular applications of the current invention may include use of the laser for expansion of atomized water or fluid particles above a target surface for mechanical cutting or ablation. The above-referenced U.S. Pat. No. 6,288,499 discloses (a) output optical energy distributions including output pulses of optical (e.g., laser) energy having full-width half-max ranges closer to beginnings than ends of the output pulses and (b) full-width half-max values of the output pulses ranging from about 0.025 to about 250 microseconds.
With reference to
With reference to
As used herein, the full-width half-max range is defined from a beginning time, where the amplitude first rises above one-half the peak amplitude, to an ending time, wherein the amplitude falls below one-half the peak amplitude a final time during the pulse width. The full-width half-max value is defined as the difference between the beginning time and the ending time. The location of the full-width half-max range along the time axis, relative to the output pulse width, is closer to the beginning of the pulse than the end of the pulse. The location of the full-width half-max range is preferably within the first half of the pulse and, more preferably, is within about the first third of the output pulse along the time axis. Other locations of the full-width half-max range are also possible in accordance with the present invention. The beginning time of the full-width half-max range preferably occurs within the first 10 to 15 microseconds and, more preferably, occurs within the first 12.5 microseconds from the leading edge of the output pulse. The beginning time, however, may occur either earlier or later within the output pulse. The beginning time is preferably achieved within the first tenth of the pulse width.
In view of the foregoing, it will be understood by those skilled in the art that the methods of the present invention can facilitate formation of laser devices, and in particular side-pumped diode laser systems. The above-described embodiments have been provided by way of example, and the present invention is not limited to these examples. Multiple variations and modification to the disclosed embodiments will occur, to the extent not mutually exclusive, to those skilled in the art upon consideration of the foregoing description. Such variations and modifications, however, fall well within the scope of the present invention as set forth in the following claims.
This application claims the benefit of U.S. Provisional application No. 60/299,944, filed Jun. 21, 2001 and entitled HIGH-EFFICIENCY, SIDE-PUMPED DIODE LASER SYSTEM.
Number | Name | Date | Kind |
---|---|---|---|
5181223 | Baer et al. | Jan 1993 | A |
5192279 | Samuels et al. | Mar 1993 | A |
5200966 | Esterowitz et al. | Apr 1993 | A |
5363387 | Sinofsky | Nov 1994 | A |
5401171 | Paghdiwala | Mar 1995 | A |
5415652 | Mueller et al. | May 1995 | A |
5423798 | Crow | Jun 1995 | A |
5458594 | Mueller et al. | Oct 1995 | A |
5554029 | Kowalyk et al. | Sep 1996 | A |
5623510 | Hamilton et al. | Apr 1997 | A |
5940425 | Lasser et al. | Aug 1999 | A |
6050991 | Guillet | Apr 2000 | A |
6086366 | Mueller et al. | Jul 2000 | A |
6090102 | Telfair et al. | Jul 2000 | A |
6179830 | Kokubu | Jan 2001 | B1 |
6213998 | Shen et al. | Apr 2001 | B1 |
6235017 | Jegorov et al. | May 2001 | B1 |
6288499 | Rizoiu et al. | Sep 2001 | B1 |
6458120 | Shen et al. | Oct 2002 | B1 |
6607524 | LaBudde et al. | Aug 2003 | B1 |
6631153 | Sumiyoshi et al. | Oct 2003 | B2 |
Number | Date | Country | |
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60299944 | Jun 2001 | US |