Claims
- 1. A high-frequency circuit, comprising:
- input and output ends for a high-frequency signal;
- a high-frequency element;
- a first signal line connecting said input end with said high-frequency element;
- a second signal line connecting said high-frequency element with said output end;
- a first transmission line provided between a first node on said first signal line and a ground electrode;
- a second transmission line provided between a second node on said second signal line and said ground electrode;
- a first capacitor provided between said first node and said ground electrode; and
- a second capacitor provided between said second node and said ground electrode;
- said first transmission line and first capacitor arranged to generate resonance at one quarter wavelength of said high-frequency signal;
- said second transmission line and second capacitor arranged to generate resonance at one quarter wavelength of said high-freguency signal;
- the first and second transmission lines functioning so that the high-frequency element is biased by said first and second transmission lines, the first and second capacitors connected to the first and second transmission lines, respectively, whereby a physical length of the first and second transmission lines is shortened as compared to a physical length of the first and second transmission lines necessary without said first and second capacitors.
- 2. A high-frequency component, comprising:
- a dielectric substrate having first and second major surfaces opposite to each other;
- input and output terminals for a high-frequency signal;
- a high-frequency element on said first major surface of said dielectric substrate;
- a first signal line conductor connecting said input terminal with said high-frequency element;
- a second signal line conductor connecting said high-frequency element with said output terminal;
- a ground electrode;
- a first transmission line provided between a first node on said first signal line conductor and said ground electrode;
- a second transmission line provided between a second node on said second signal line conductor and said ground electrode;
- a first capacitor electrode provided between said first node and said ground electrode; and
- a second capacitor electrode provided between said second node and said ground electrode,
- a first capacitor comprising said first capacitor electrode, said ground electrode and said dielectric substrate, a second capacitor comprising said second capacitor electrode, said ground electrode and said dielectric substrate,
- said ground electrode formed at a position different from positions of said first and second signal line conductors, said first and second transmission lines and said first and second capacitor electrodes along a thickness direction of said dielectric substrate and oppositely to said first and second capacitor electrodes and said first and second transmission lines,
- and further comprising first and second connecting conductors connecting said ground electrode with said first and second transmission lines respectively;
- said first transmission line and first capacitor arranged to generate resonance at one quarter wavelength of said high-frequency signal;
- said second transmission line and second capacitor arranged to generate resonance at one quarter wavelength of said high-frequency signal;
- the first and second transmission lines functioning so that the high-frequency element is biased by said first and second transmission lines, the first and second capacitors connected to the first and second transmission lines, respectively, whereby a physical length of the first and second transmission lines is shortened as compared to a physical length of the first and second transmission lines necessary without said first and second capacitors.
- 3. The high-frequency component in accordance with claim 2, wherein
- said first and second signal line conductors, said first and second transmission lines and said first and second capacitor electrodes are formed on said first major surface of said dielectric substrate,
- said ground electrode formed on said second major surface of said dielectric substrate.
- 4. The high-frequency component in accordance with claim 3, wherein
- said first capacitor electrode is connected to said first signal line conductor at said first node of said first signal line conductor,
- said first transmission line is connected to said first signal line conductor at said first node of said first signal line conductor,
- said second capacitor electrode is connected to said second signal line conductor at said second node of said second signal line conductor, and
- said second transmission line is connected to said second signal line conductor at said second node of said second signal line conductor.
- 5. The high-frequency component in accordance with claim 3, wherein
- said first capacitor electrode is connected to said first signal line conductor at said first node of said first signal line conductor,
- said first transmission line extends from said first capacitor electrode,
- said second capacitor electrode is connected to said second signal line conductor at said second node of said second signal line conductor, and
- said second transmission line extends from said second capacitor electrode.
- 6. The high-frequency component in accordance with claim 2
- said first and second connecting conductors are formed in through holes in said dielectric substrate.
- 7. The high-frequency component in accordance with claim 2 wherein
- said first and second connecting conductors are formed on side surfaces of said dielectric substrate.
- 8. The high-frequency component in accordance with claim 2, wherein
- said first and second signal line conductors, said first and second transmission lines, said first and second capacitor electrodes and said ground electrode are formed in the interior of said dielectric substrate.
- 9. The high-frequency component in accordance with claim 3, wherein said first and second connecting conductors are formed in through holes in said dielectric substrate.
- 10. The high-frequency component in accordance with claim 4, wherein said first and second connecting conductors are formed in through holes in said dielectric substrate.
- 11. The high-frequency component in accordance with claim 5, wherein said first and second connecting conductors are formed in through holes in said dielectric substrate.
- 12. The high-frequency component in accordance with claim 3, wherein said first and second connecting conductors are formed on side surfaces of said dielectric substrate.
- 13. The high-frequency component in accordance with claim 4, wherein said first and second connecting conductors are formed on side surfaces of said dielectric substrate.
- 14. The high-frequency component in accordance with claim 5, wherein said first and second connecting conductors are formed on side surfaces of said dielectric substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-054010 |
Mar 1994 |
JPX |
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Parent Case Info
This is a Continuation of application Ser. No. 08/410,051, filed on Mar. 24, 1995 now abandoned.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
410051 |
Mar 1995 |
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