Claims
- 1. A high frequency, high voltage MOSFET isolation amplifier apparatus comprising in combination:
- a current control amplifier to receive a current command signal at its non-inverting input, said current control amplifier providing a current signal;
- a modulating means operatively connected to said current control amplifier to receive said current signal, said modulating means modulating said current signal at a predetermined frequency to provide a control signal, said modulation means including an isolation means,
- an operational amplifier means operatively connected to said modulating means to receive said control signal therefrom, said operational amplifier means providing a current control signal, said operational amplifier means floating with respect to ground,
- a plurality of power MOSFET devices operatively connected to said operational amplifier means to receive said current control signal, said power MOSFET devices connected between a plus and minus high voltage power supply, said power MOSFET devices providing a load current,
- an inductive load means operatively coupled to said power MOSFET devices to receive said load current, and,
- a feedback means connected between said inductive load means and ground, said feedback means providing a feedback signal, said feedback signal being applied to the inverting input of said current control amplifier.
- 2. A high frequency, high voltage MOSFET isolation amplifier apparatus as described in claim 1 wherein said isolation means comprises a transformer coupling means.
- 3. A high frequency, high voltage MOSFET isolation amplifier apparatus as described in claim 1 wherein said operational amplifier means comprises a low impedance drive means.
- 4. A high frequency, high voltage MOSFET isolation amplifier apparatus as described in claim 1 wherein said inductive load means comprises a magnetic yoke.
- 5. A high frequency, high voltage MOSFET isolation amplifier apparatus as described in claim 1 wherein said plurality of power MOSFET devices comprise two power MOSFETs in series.
- 6. A high frequency, high voltage MOSFET isolation amplifier apparatus as described in claim 1 said predetermined frequency comprises a 10 MHz clock signal.
STATEMENT OF GOVERNMENT INTEREST
The invention described herein may be manufactured and used by or for the Government for governmental purposes without the payment of any royalty thereon.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
809516 |
Feb 1981 |
SUX |
1170584 |
Jul 1985 |
SUX |