Claims
- 1. A method for fabricating a hybrid thermal detector structure, comprising the steps of:reticulating at least three pixels in a pyroelectric material; depositing an electrically conductive layer on a first side of said pixels; depositing a precursor film on said electrically conductive layer; gelling said precursor film to form a porous film; attaching electrical contacts to a second side of said pixels; and coupling said electrical contacts to a sensing integrated circuit structure.
- 2. The method of claim 1 wherein said porous film is a xerogel.
- 3. The method of claim 2 wherein said xerogel comprises silicon.
- 4. The method of claim 1 wherein said porous film is an aerogel.
- 5. The method of claim 4 wherein said aerogel comprises silicon.
- 6. The method of claim 1 wherein said sensing integrated circuit structure comprises;interconnect metal coupled at one end to the top of a thermal isolation structure; and integrated circuitry coupled to the opposite end of said interconnect metal.
- 7. The method of claim 1 further comprising depositing an infrared transparent layer on said porous film, after said gelling a precursor film.
- 8. The method of claim 1 wherein radiation is absorbable by said porous film.
- 9. A method for fabricating a hybrid thermal detector structure, comprising the steps of:reticulating at least three pixels in a pyroelectric material depositing an electrically conductive layer on a first side of said pixels; depositing a precursor film on said electrically conductive layer; gelling said precursor film to form a porous film; depositing an infrared transparent layer on said porous film; attaching electrical contacts to a second side of said pixels; and coupling said electrical contacts to a sensing integrated circuit structure.
- 10. The method of claim 9 wherein radiation is absorbable by said porous film.
- 11. The method of claim 9 wherein said porous film is a xerogel.
- 12. The method of claim 11 wherein said xerogel comprises silicon.
- 13. The method of claim 9 wherein said porous film is an aerogel.
- 14. The method of claim 13 wherein said aerogel comprises silicon.
- 15. The method of claim 9 wherein said sensing integrated circuit structure comprises,interconnect metal coupled at one end to the top of a thermal isolation structure; and integrated circuitry coupled to the opposite end of said interconnect metal.
Parent Case Info
This application is a continuation of application Ser. No. 08/431,250, filed Apr. 28, 1995, abandoned.
US Referenced Citations (7)
Non-Patent Literature Citations (2)
Entry |
Hrubesh, Lawrence W. et al., Processing and Characterization of High Porosity Aerogel Films, Advances in Porous Materials Materials Research Society Symposium Proceedings v 371. Materials Research Society, p. 195-204. (best date available), 1995.* |
Hrubesh, Lawrence W. et al., Processing and Characterization of High Porosity Aerogel Films, (only abstract availabel) UCRL-JC-117554; CONF-941144-176, Nov. 1994. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/431250 |
Apr 1995 |
US |
Child |
08/788313 |
|
US |