The present invention relates to the field of semiconductor integrated circuits and more particularly relates to a high order discrete time charge rotating passive infinite impulse response (IIR) filter.
Filters are well-known in the electrical art, functioning as key building blocks in wireless communications and analog signal processing. Cellular communication devices are the largest consumer of filters. Nowadays, billions of these devices are produced every year and even a small improvement in cost and power consumption has a large impact. For example, consider a zero intermediate-frequency (zero-IF or ZIF) receiver. After reception by the antenna, a preselect filter selects a desired band (tens of MHz wide) containing the desired signal (from hundreds of kHz to several MHz wide) which is then amplified by a low noise amplifier (LNA), then downconverted by a mixer to baseband. Then, a sharp low-pass filter (LPF) selects the desired channel. The channel select filter is followed by an ADC. To relax the ADC dynamic range or the required effective number of bits (ENOB), the channel select filter usually has a high order.
There is thus a need for a passive filter that has very low power consumption to increase battery life, low noise to improve the overall noise performance of the system as well as good linearity to work properly in presence of interferer signals. Also, a high tenability is required for today's multi-mode/multi-standard radios.
A novel and useful high-order discrete-time charge rotating (CR) infinite impulse response (IIR) low-pass filter is presented. The filter utilizes capacitors and an optional gm-cell, rather than operational amplifiers, and is thus compatible with digital nanoscale technology. A 7th-order charge-sampling and 6th-order voltage-sampling discrete time filter is disclosed. The order of the filter is easily extendable to higher orders. The charge rotating filter is process-scalable with Moore's law and amenable to digital nanoscale CMOS technology. Bandwidth of this filter is precise and robust to PVT variation. The filter exhibits very low power consumption per filter pole, ultra-low input-referred noise, wide tuning range, excellent linearity and low area per bandwidth and filter pole.
Design and in-depth analysis of the novel high-order discrete-time charge rotating IIR low-pass filter is provided. In one example embodiment, a 65 nm CMOS 6th/7th-order filter operating at 800 MS/s sampling rate is implemented. Bandwidth of this filter is programmable between 400 kHz to 30 MHz with 100 dB maximum stop-band rejection. It has an IIP3 of +28/+21 dBm and the averaged spot noise is 3.7/3.4nV/√Hz. It uses capacitors and a simple gm-cell, rather than op amps, thus being compatible with digital nanoscale technology. It consumes 1.7/2 mW at 1.2V and occupies 0.42 mm2.
There is thus provided in accordance with the invention, a discrete time analog filter, comprising an input node for receiving an input signal, a plurality of history capacitors (CH), a sampling capacitor (CS) coupled to said plurality of history capacitors and operative to cyclically share charge with said plurality of history capacitors.
There is also provided in accordance with the invention, a discrete time analog filter, comprising an input node for receiving an input signal, a first history capacitor (CH1) coupled to said input node, one or more switch banks coupled to said first history capacitor, each switch bank comprising a sampling capacitor configured to share charge with said first history capacitor, and a plurality of second history capacitors (CH) coupled to and configured to share charge with the sampling capacitor in each respective switch bank.
There is further provided in accordance with the invention, a method of analog filtering in discrete time, the method comprising receiving an input signal, charging a first history capacitor with said input signal, sharing charge with a sampling capacitor coupled to said first history capacitor, and cyclically sharing charge with a plurality of second history capacitors.
There is also provided in accordance with the invention, a discrete time analog filter, comprising an input node for receiving an input signal, one or more switch banks coupled to said input signal, each switch bank comprising a first switch coupled to said input signal, a sampling capacitor coupled to said first switch and configured to share charge with a plurality of history capacitors, a plurality of second switches, each switch coupled to said sampling capacitor and to a response history capacitor, and said plurality of history capacitors (CH) coupled to and configured to share charge with said sampling capacitor in a respective switch bank.
The invention is herein described, by way of example only, with reference to the accompanying drawings, wherein:
Three types of analog filters include: gm-C, active RC and active switched-capacitor filters. The gm-C filter uses gm-cells and capacitors to construct a desired transfer function (TF). The bandwidth (BW) of this filter can be relatively high. In this filter, pole locations depend on gm and capacitance values. These two values are affected independently by process, voltage and temperature (PVT) variations and cause considerable variation in bandwidth and transfer function of the filter. Hence, the filter requires a calibration mechanism running periodically or in the background. This makes the filter quite complicated with power and area disadvantages. This filter also features low to moderate linearity.
An active RC filter can have relatively high linearity. In this type of filter, pole locations are set by resistor and capacitor values. Since these two are also sensitive to process and temperature variations and do not track each other, this type of filter also requires calibration. An active switched-capacitor filter that does not have this problem has pole locations set by the capacitor ratio that is very accurate and independent from PVT variation in monolithic implementations. This filter, however, dissipates significant amount of power in the operational amplifiers (op amps) to ensure a good settling. Also, its sampling rate is limited by speed of the op amps. Thus, it typically cannot achieve a very high bandwidth.
Both the active RC and switched-capacitor filters need a very carefully designed active analog component. In a gm-C filter, a very linear gm-cell with high swing and low noise is required. Active RC and active switched-capacitor filters need a fast-settling op amp with high gain. By scaling down CMOS process technology to deep nanoscale, it is becoming more difficult to design and implement such an active analog component. This is mainly due a lower voltage headroom and lower MOS intrinsic gain.
In another embodiment, a discrete-time (DT) passive analog signal processing technique avoids the aforementioned problems. Passive discrete time FIR/IIR filters using switched-capacitor techniques are used for baseband signal processing and channel selection of an RF receiver. High order discrete time passive filtering is used based on a rotating switched-capacitor topology that offers excellent noise, linearity and very low power consumption.
Basic discrete time IIR low-pass filter structures are described below followed by an example high-order filter. The description begins with first order filters. The simplest analog discrete-time (DT) filter is a passive first-order IIR low-pass filter as shown in
where n is a sample number. Hence, its transfer function can be written in the z-domain as
where α is CH/(CH+CS). This is a standard form of a discrete time low-pass filter (LPF) with unit dc gain and half-a-cycle delay. Switch driving clock waveforms are shown in
The step response of this filter is shown in
where Ts, is the sampling period. At this phase, CS samples a part of input charge and the CH charge. Consequently, we have the discrete time (DT) output samples at the end of φ1
The step response of this filter is shown in
In the above two structures CS behaves like a lossy component that leaks a time-averaged current from CH to ground. We might call it a DT resistor (also referred to as a switched-capacitor resistor). This resistor in parallel with the capacitor makes a first order low-pass filter.
A block diagram illustrating a model of voltage sampling IIR1 shown in
An example behavioral model of the IIR1 filter incorporating charge sampling is shown in
This sinc-shape filter has notch frequencies located at k/Ti (k=1, 2, 3, . . . ). In this case with ideal clock waveforms, Ti is the same as Ts=1/fs. In a next step, the sampler converts the CT signal to a DT signal and, at the end, a 1st-order DT LPF preforms the main filtering. As shown in
In this equation, 1/(CSfs) is an equivalent DT resistance of the sampling capacitor.
The charge sampling structure has several additional advantages compared to the voltage sampling structure. As discussed, the current integration forms a CT antialiasing filter, which suppresses the folding of images. Also, with the gm-cell used in the charge sampling structure, the filter can have an overall voltage gain higher than unity. In addition, this gm-cell can be designed to lower the overall input-referred noise of the filter. These advantages, however, come at the cost of a higher power consumption and a lower linearity imposed by the gm-cell.
A second-order DT low-pass filter (referred to as IIR2) can be synthesized by adding a second history capacitor to the charge sampling 1st-order LPF, as shown in
In this filter, the voltage-sampling IIR1 is cascaded with the charge-sampling one, raising the total order of the filter to the 2nd-order. It is noted that cascading two CT conventional filter stages without any loading effect would require an active buffer to isolate the first stage from the second stage. In contrast, in the DT filter of
Charge sharing equations of this filter at the end of φ2 are
which generates the filter transfer function
where αα1,2=CH1,2/(CH1,2+CS). Hence, the overall dc voltage gain of this filter is given by
which is the same as the charge-sampling IIR1 in (7).
The transfer function of this filter is plotted in
Many applications require higher orders of filtering. One technique is to build a high-order filter by cascading two or more first and/or second-order filters.
As plotted in
This structure, however, consumes more power as compared to a single IIR2 filter. Likewise, linearity is worse because nonlinearities of the first and second IIR2 filters are added together. As an example, if the first stage has a gain higher that 0 dB, the input-referred nonlinearity of the second stage is dominant and degrades the total linearity. Similarly, the total input-referred noise of this filter is higher than with a single IIR2. This is due to the fact that both IIR2 filters contribute to noise of the system. If the first stage has a gain higher than 0 dB, however, it reduces the input-referred noise contribution of the second stage.
In another embodiment, the filter order is increased by cascading the IIR2 filter with a passive 1st-order switched-capacitor filter.
Then we can derive the transfer function as
where
The main drawback of this structure is gain loss. Comparing this 3rd-order filter with the IIR2, there it a lower dc gain because of the second sampling capacitor CS2. It leaks part of the system charge to ground in addition to the resetting of CS1 and, therefore, introduces more loss. Comparing (9) and (12) reveals a dc gain difference of these two structures. Input-referred noise of this structure is also higher versus that of IIR2. Firstly, because of extra noise of the IIR1 part in
The above reasoning makes it apparent that extending the IIR filter order using a conventional approach carries two serious disadvantages: First, the increased reset-induced charge loss lowers the gain and signal-to-noise ratio. Second, the active buffers between the stages worsen both the noise and the linearity. An alternative embodiment incorporating charge rotation is presented infra that does not suffer from these two handicaps.
Before introducing the high-order filter embodiment, the IIR2 block is redrawn in
This technique can be extended by adding one or more phase slots between φ2 and the last reset phase, together with additional associated history capacitors. An example high-order filter structure (7th order) is shown in
In the last phase φ8, CS is finally connected to ground to empty its remaining charge. Thus, it is ready for the next complete cycle. Since the CS capacitor rotates charge between the history capacitors, this structure is referred to as a “charge rotating” discrete time filter. Each of the history capacitors can be considered an output of the filter with different orders. The output with the highest order CH, however, is typically used (CH7 in this example). As shown in
Appropriate cascading of seven 1st-order IIR filters in this structure requires reverse isolation between them. This reverse isolation is provided by rotating CS located at the center of the structure only in one direction (i.e. clockwise here). Also, the resetting phase at the end of each cycle is necessary to prevent transferring charge from the last stage CH7 to the first stage at the next cycle.
Compared to the IIR2 structure in
To aid in understanding the operation of the charge rotating filter, its step response is plotted in
To derive the DT transfer function (TF) of this filter, we need to first obtain its charge sharing equations. Considering that samples of the main output Vout=V7 are ready at the end of φ7 we have
In these equations, each −⅛ means one phase delay. At φ7, V7 is a function of its value at previous cycle (−1 delay) and a sample V6 that comes from the previous phase (−⅛ delay). Likewise, charge sharing equations from φ1 to φ6 are derived. Converting all these equations into Z-domain, we can derive the following general equation for different outputs
for k=1, 2, . . . , 7. In this equation, αi=CH,i/(CH,i+CS). Normally, we prefer to have all the poles identical and so we choose all the capacitors to have the same size CH1-7=CH. Then the transfer function of the main output (i.e. V7) is simplified to the following
Inside the parenthesis is a 1st-order low-pass TF with unity gain. Also, z−6/8 is a delay of 6 phases. Based on this equation, dc gain of Vout to input charge, gin, is 1/CS. Then, by using (6), the overall dc gain of this filter from input voltage to its output is
In this equation, Ti=Ts is the time period of the cycle extending over the 8 phases. The second part of this equation 1/(CS/fs) is an equivalent dc resistance of the sampling capacitor that is reset fs times per second. This filter has the same DC voltage gain as the IIR2 filter in (10).
For frequencies much lower than fs, we can use bilinear transform to obtain the continuous-time transfer function of the filter
This equation is similar to a transfer function of an RC LPF, i.e., 1/(1+RCs), with −3 dB bandwidth of 1/(RC). Poles of this equations are all located at s=−CSfs/CH. It indicates that the bandwidth of the filter only depends on ratio of sampling and history capacitors and the sampling frequency. Since capacitor ratio has a very low variation, bandwidth of this filter is insensitive to PVT.
The wideband transfer function of this filter is plotted in
This filter has seven real poles but no complex conjugate poles. Therefore, transition between the flat pass-band frequency and the sharp filtering roll-off in
Since the sampling capacitor CS rotates one turn per cycle, the sampling rate is the same as the cycling frequency. Also, the output rate of this filter is the same as the sampling rate, meaning no decimation occurs in the filter. Each cycle of this filter comprises eight phases, and, therefore, the sampling frequency fs is fref/8. For example, with a reference clock frequency of 1 GHz, the sampling rate is 125 MS/s. Considering the limited rejection of the antialiasing filter formed by the current integration, the filter aliases to dc some amount of signal at frequencies around k×fs (k=1, 2, 3 . . . ), inside pass-band of the filter (see
To avoid the aliasing, a higher sampling rate can be used. In addition, to have good stop-band rejection in discrete time filters the sampling rate is preferably several times higher than the desired bandwidth.
Operation of the charge rotating IIR7 filter such as shown in
A schematic diagram illustrating an example full rate charge rotating IIR7 low pass filter using pipelining in charge sampling mode shown in
It is noted that the sampling capacitor CS 156 in
In this circuit, sampling frequency fs is the same as fref which is eight times higher than previously. Charge sharing equations of this filter are as follows
Then, the transfer function of this filter is given by
for k=1, 2, . . . , 7. This is the same as (16) except that the delay has been changed. Also, dc voltage gain of the full-rate IIR7 is the same as (17). Note that here fs is increased to fref.
In this filter, if there is some mismatch between CS and different CH capacitors it would slightly shift the pole locations. This small change might slightly change the filter bandwidth (e.g., less than a percent), which appears tolerable for most applications. If there is a mismatch, however, between the different CS capacitors in the full-rate structure, it affects the filter performance in a different way. As an example, suppose that only one of the eight sampling capacitors has a small mismatch with respect to the others. Then, each output of the filter experiences a slightly different charge sharing every eight clocks. This causes the input signal to alias to harmonics of fref/8 and also from these harmonics to around dc. Gain of this conversion is proportional to the relative mismatch (typically very small). On the other hand, bandwidth of the filter is normally less than fref/8. Hence, the aliased signal is filtered around the harmonics. In practice, this non-ideal effect is so small that it typically cannot be observed.
The output noise of the charge rotating 7th-order discrete time filter is made up of two main contributors: (1) noise from the input gm-cell and (2) noise from the passive switched-capacitor network.
By substituting (6) into the above equation and then simplifying it, we obtain
Since in our case Ti=1/fs, noise PSD of the sampled input charge will be
The above noise is feed to the switched-capacitor filter and is shaped by its transfer function
V
n,out
2
For example, output voltage noise PSD of the CR IIR7 can be calculated by substituting (16) and
z=e
jΩ
=e
jωT
=e
j2πf/f
(25)
into (24) yields
In the above equation, gm/(CSfs) is the voltage gain of the filter calculated also in (7).
The second key noise contributor of the filter is from the switched-capacitor network. Before calculating this noise we first discuss noise of a voltage sampling process. In
S
R(f)=4kTRon, f≧0 (27)
where k is Boltzmann's constant and T is the absolute temperature. When the switch is on, noise of the resistor 226 is shaped by the RC filter with a time constant of τ=RonCS and then appears at the output. At the moment the switch is disconnected, the output noise is sampled and held on CS 229. The sampling causes noise folding from frequency ranges of fs/2-to-fs,fs-to-3fs/2 and so on, to the 0-to-fs/2 range and summed, as shown in
If we integrate this noise over the entire frequency range, its power is kT/CS.
To simplify the problem for more complicated switched-capacitor circuits, we can use the following assumption: the continuous-time noise source
To calculate the output noise of the charge rotating IIR7, we begin with a lower order for simplicity and then extend it to the seventh order.
As defined in (28) the PSD of
However, other noise sources are differently calculated. Since from φ1 to φ3, CS is in series with CH1 to CH3, the total capacitance at each phase should be taken into account for noise PSD
Sampling frequency, fs, in the above two equations is the repetition frequency of each phase, equal to fref/4 in this case.
At φ4, CS is reset. In other words, the effects of noise sources at other phases on CS are all cleared. At the end of this phase, when CS is disconnected from ground, it samples noise of the reset switch
@φ4:vs[n]=vn,rst[n] (32)
Then, CS is connected to CH1 at φ1. The charge sharing equations at this phase are
where v1[n−1] is the previous history of CH1, vs[n−¼] is a voltage sample of VS from the previous phase (i.e. φ4), and vn,1[n] is noise of switch at φ1. Combining the above two equations and (29) we obtain
Now, we can calculate noise transfer functions to the output V1 by using z-transform
To see PSD of V1, we substitute z=ejΩ and it follows that
Then, it reduces to
Before going to the next phase, we need to calculate the remaining noise on CS at the time it is disconnected from CH1
@φ1:vs[n]=v1[n]−vn,1[n] (38)
Using (35), noise transfer function on VS at the end of φ1 is
Then, its noise PSD is simplified to
Substituting (31) in this equation, it reduces to
This appears to be a very interesting and important result. It suggests that the noise PSD of VS at φ1 (i.e. at the beginning of the input sample processing cycle) is exactly the same as its PSD at φ4, which is several clock cycles later at the end of the input sample processing cycle. This can be explained as follows: at the end of φ4, VS has a PSD of
Similar to what was described for φ1, the same set of equations, (33) through (41), are valid for other phases executing before the reset phase (φ4 in this case). Therefore, in general we have
or i=1, 2, 3 in the CR 3rd-order filter. Also, VS at the end of each phase has the same noise PSD as calculated in (41)
Although it would seem at first that that noise of higher order outputs should be increased due to the accumulation of the noise coming from different noise sources, surprisingly, (42) rejects this hypothesis. Suppose that all the history capacitors have equal capacitance, such that the noise PSD of all different outputs is the same. In other words, it does not build up by going to higher orders. The main reason comes from (41). Noise PSD of VS at each phase is the same as the previous phase and equal to
A diagram illustrating the noise spectral density of V1 at the end of φ1 shown in
Using (31) it reduces to
This equation states that the total noise power of each output only depends on CH of that output and the absolute temperature. This result is same as the well-known output noise power of an RC filter that is kT/C.
All the above results and equations are valid and extendable to higher order filters, e.g., the charge rotating IIR7 discussed supra. Note that if a pipelining technique is used to increase the sampling rate of the filter, all the above equations remain the same except that the new sampling frequency should be used.
Thus, the noise of the gm-cell is shaped by the filter transfer function and then appears at the output. The higher the filtering order, the more reduction of out-of-band noise caused by the gm-cell. Also, the noise of the switched-capacitor circuit is the same at different outputs. Hence, by increasing the filtering order, the overall noise level remains the same. As a whole, the total output noise decreases slightly by raising the order of the charge rotating filter. This salient advantage is in contrast with conventional filters. For example, in an active-RC filter, additional resistors and op amps are required to increase an order thus leading to higher output noise.
In one embodiment, the high-order charge-rotating (CR) DT filter comprises a gm-cell, switches, capacitors and a waveform (i.e. multiple clocks) generator circuit. Therefore, it is compatible with digital nanoscale CMOS technology. Implementing the filter in a finer process reduces the area of the capacitors, switches and the waveform generator while maintaining the same performance. In fact, the filter circuit scales down with Moore's law. In addition, by switching from one process node to the next, its performance improves where we have faster switches, capacitors with higher density, higher gm values and a faster or lower power waveform generator digital circuit. Hence, this architecture is amenable to deep nanoscale CMOS technology. Bandwidth of the filter is accurate and, as described in (18), is set by the capacitor ratio and clock frequency. In CMOS processes, the capacitor ratio has the lowest PVT variation if the same type of capacitors is used. A key feature of this filter eliminates any need for calibration which is necessary for many prior art filter types. Due to the fast switches with low “on” resistance coupled with use of pipelining, the filter of the present invention has an ultra-high sampling rate (in range of GS/s). Hence, unwanted aliasing is avoided or minimized. The DT high-order filter also exhibits ultra-low noise. This is due to an absolute minimum number of noisy components (i.e. the gm-cell and switched-capacitor network). Also as described supra, the noise of the switched-capacitor network does not accumulate at higher orders. The use of a single lossy component to realize seven poles substantially reduces the noise of the switched-capacitor circuit compared to seven cascaded RC filters. Since the switched-capacitor portion of this filter is extremely linear, the filter achieves good linearity with careful design of the gm-cell.
In one embodiment, the CR filter is implemented differentially. For illustration purposes only, the filter, generally referenced 250, is shown single-ended in
The filter operates in either of two modes: (1) charge sampling and (2) voltage sampling. In the charge-sampling mode, as described supra, the gm-cell converts the input voltage into current and then the resulting charge (i.e. the integrated current) is sampled. Although there is an active gm-cell in this mode, the filtering network is fully passive. This means that during different phases, charge is not injected into the switched-capacitor network other than the input charge packet. Hence, the filter is semi-passive in this mode.
In the voltage-sampling mode, the gm-cell is bypassed and disconnected from the power supply. In addition, CH1 is eliminated so as not to load the input. This is achieved by means of a “mode control” input in
Since a key feature of the filter of the present invention is the amenability to process scaling, a simple inverter-based gm-cell is used which is shown in more detail in
Coupling capacitors CC 306, 304, 316, 318 and bias resistors RB 308, 310, 320, 322 of this gm-cell set a lower limit of frequency response. In most cellular applications, a low limit frequency exists such that information whose spectrum is lower than this is not important. In this embodiment, CC and RB are chosen to be as large as possible. They set a low limit frequency of a few kHz for the filter. If such a limit is not acceptable for the particular application, then other gm-cell architectures well-known in the art can be used. Alternatively, the filter in the voltage-sampling mode can be used as it passes frequencies down to dc. As the limited output resistance of this gm-cell may affect the filtering operation of the switched-capacitor network, we have tried to increase it to several times higher than the equivalent dc resistance of the SC circuit.
Despite using a simple inverter-based gm-cell, the gm-cell provides good linearity. By adjusting NMOS and PMOS transistor sizes as well as bias current and providing a low enough resistance (by the SC circuit) at its output, a high IIP3 is obtained.
Regarding the Cc capacitors of this filter, MOS capacitors with high density are preferably used. It is not possible, however, to use them differentially. Using a differential capacitor has the advantage of reducing the required capacitance and area by four times compared to using two single-ended capacitors. Hence, in one embodiment standard MoM (metal-oxide-metal) capacitors are used that can be implemented differentially. The history capacitors CH1-7 range from 0.5-to-128 pF digitally selectable using eight bits. To converse area, they have been implemented differentially. For the filter sampling capacitors, MoM capacitors are used such that they can be well matched with the history capacitors. This reduces variations due to PVT as compared to the case of using two different types of capacitors. The sampling capacitors CS range from 0.75-to-4.5 pF digitally selectable using four bits. Here, instead of implementing CS differentially, they are implemented single-ended. We can then set the common-mode voltage of the filter by terminating CS to VCM instead of ground. This voltage matches the output common-mode voltage of the gm-cell and is chosen to be VDD/2. To adjust the bandwidth of the filter, we CS is fixed and CH changed. In this manner, gain and linearity of the circuit does not change. Also, if the sampling frequency is changed, we change CS inversely to maintain the same bandwidth and gain.
As shown in
In one embodiment, the waveform generator block, generally referenced 330 in
As shown in
In one embodiment, routing of the multiphase clock signal requires attention to detail. At first, parasitic coupling of the clock signals and analog data signals are preferably avoided or at least minimized. For each of the phases, we have differential clocks (φ and
Discrete-time output data of the chip has a step-like waveform in the continuous-time domain. In other words, it appears as a ZOH continuous-time signal at the output. Hence, the output signal can be directly measured and evaluated without any other required conversion. The measured frequency response of the filter in the charge sampling mode at the 7th-order output for different bandwidth setting is shown in
To evaluate linearity of the filter, a two-tone test can be performed. Two single-tone signals from separate signal sources are combined together by a hybrid combiner to isolate them. Since outputs of the two signal sources can affect each other and create unwanted sideband tones, a resistive combiner should be avoided. The combined signal is fed to the filter and its output is evaluated by a spectrum analyzer. For an in-band linearity test, the two input tones are applied at 3 MHz and 4 MHz. The measured 2nd and 3rd order intermodulation products at the output of the filter at 9 MHz bandwidth versus the input power for the charge-sampling mode is shown in
To be able to compare the 1-dB compression point of our filter in its two operational modes to other filters with various gains, we compares the output compression point as
P
1dB,out
=P
1dB,in+Gain−1 (45)
Measured output compression point of the filter in the charge-sampling mode is +4.6 dBm. In the voltage-sampling mode, this value goes higher than +14 dBm.
Filter noise can be evaluated using a spectrum analyzer. For this measurement, the input of the filter is grounded. To measure filter noise, a two-step process is carried out: (1) measuring total output noise (including the noise of the filter and output buffer) and (2) disabling the filter and measuring the noise of only the output buffer. Then, since noise of the buffer and the filter are uncorrelated, the filter noise is calculated by subtracting the total noise PSD and the buffer noise PSD. The measured input-referred noise (IRN) spectral density of the filter in the charge-sampling mode for the 9 MHz bandwidth setting is shown in
SFDR=⅔·(IIP3−PN) (47)
where IIP3 and PN are in dBm and SFDR is in dB. As measured by a single-tone test, a −3.5 dBm input signal (422 mV peak-to-peak differential) creates −40 dB 3rd-harmonic distortion (HD3) at the output. This gives an 87 dB dynamic range (1% HD3 DR) for the 9 MHz bandwidth. Measured input-referred noise of the filter in the voltage-sampling mode for the 3.1 MHz bandwidth is illustrated in
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.
The corresponding structures, materials, acts and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. As numerous modifications and changes will readily occur to those skilled in the art, it is intended that the invention not be limited to the limited number of embodiments described herein. Accordingly, it will be appreciated that all suitable variations, modifications and equivalents may be resorted to, falling within the spirit and scope of the present invention. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
This application claims priority to U.S. Provisional Application Ser. No. 61/829,976, filed May 31, 2013, entitled “Time Domain RF Signal Processing,” incorporated herein by reference in its entirety.
Number | Date | Country | |
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61829976 | May 2013 | US |