L.J. Mawst, et al., “High Continuous Wave Output Power InGaAs/InGaAs/InGaP Diode Laser: Effect of Substrate Misorientation,” Appl. Phys. Lett. vol. 67, No. 20. Nov. 13, 1995, pp. 2901-2903. |
Francis G. Celii, et al., Optical Diagnostic Monitoring of Resonant-Tunneling Diode Growth, IEEE J. Selected Topics in Quantum Electronics, vol. 1, No. 4, pp. 1064-1072, Dec. 1995. |
A. Bhattacharya, et al., Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition of GaAs substrates, Appl. Phys. Lett. 68 (16), pp. 2240-2242, Apr. 15, 1996. |
M.A. Reed, et al., “Resonant Tunneling In a GaAs/AlGaAs Barrier/InGaAs Quantum Well Heterostructure,” Appl. Phys. Lett., vol. 50, No. 13, Mar. 30, 1987, pp. 845-847. |
J.W. Lee, et al., “Molecular-Beam Epitaxial Growth of AlGaAs/(In, Ga)As Resonant Tunneling Structures,” J. Vac. Sci. Technol. B, vol. 5, No. 3, May/Jun. 1987, pp. 771-774. |
R.M. Kapre, et al., “High Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes On GaAs (100) Substrates and Their Applications in Optical Switching,” Met. Res. Soc. Symp. Proc., vol. 228, 1992, pp. 219-224. |
E. Lheurette, et al., “In0.1Ga0.9As/GaAs/AlAs Pseudomorphic Resonant Tunneling Diodes Integrated with Air-Bridge,” Electron. Lett., vol. 28, pp. 937-938, 1992. |