The present invention relates to a high performance class AB operational amplifier.
The design of high-accuracy analogue circuits is becoming a difficult task with the scaling down of supply voltages and transistor channel lengths of the current mixed-signal integrated circuits. Most of these circuits require the use of high performance active cell: the operational amplifier (OpAmp). Furthermore, some low-IF transceivers make use of complex filters which require operational amplifier with a very high gain-bandwidth product in order to have enough loop gain at the higher band limit. Ultra low power circuit imposes a current reduction in order to increase the battery life-time in mobile handsets. Unfortunately, the bandwidth depends on the technology and the current used in the OpAmp output stage and hence the only way to reduce the current consumption is to reduce the complexity/consumption of the circuits around the OpAmp such as bias, common mode feed-back, start-up circuit. Designers are continuously working toward tradeoff solutions between gain, input/output swings, speed, power consumption, noise, etc.
The class-AB output stage topology allows driving a large load capacitor with a small output stage bias current. Furthermore, it gives a boost in the Gain Bandwidth product (GBW). Despite to its property, the most important problem designing class AB OpAmps is the accurate control of the output current which depends on process and supply voltage variations. To solve this problem it is necessary to introduce control circuits.
An ideal circuit to implement a class AB output stage is shown in
The biasing of the differential pair is performed by means of the transistors NMOS M2a, M2b having the gate terminal connected to the bias voltage VBN and the source terminals of the differential pair transistors connected to the drain terminal of a PMOS transistor M3 having the gate terminal connected to a bias voltage VBp and the source terminal connected to the supply voltage Vdd as the source terminals of the transistors M7a, M7b; in this way a bias current Iss/2 flows in each branch of the differential pair.
The circuit in
A practical implementation of the circuit in
The circuit topology in
Another circuit topology used is shown in
The circuit in
This solution is not suitable for very low current consumption application; in the case of low bias current the output current depends on the process variation of the transistor and the performances of the class AB output stage of the operational amplifier are reduced.
In view of the state of the art, the object of the present invention is to provide a high performance class AB operational amplifier which overcomes the above-mentioned drawbacks.
According to the present invention, this object is achieved by means of a class AB operational amplifier comprising an input stage, an output stage and a level shifter stage adapted to control the quiescent current of the output stage and to transfer the signal from the input stage to the output stage, a control circuit of the level shifter stage, characterized in that the control circuit comprises at least one transistor differential pair having differential input terminals, said control circuit being configured so that the differential voltage at the differential terminals of the transistor differential pair controls the level shifter stage.
The features and advantages of the present invention will become apparent from the following detailed description of an embodiment thereof, illustrated only by way of non-limitative example in the annexed drawings, in which:
The input stage 10 comprising a differential pair of transistors M1a, M1b, preferably PMOS transistor, having a differential input signal at the input terminals INP, INM and a common node. The input stage 10, similar to the input stage 1 in
The output stage 11 comprises a couple of a first M6 and a second M7 output transistors, in series to each other, and arranged between a first voltage reference Vdd and a second voltage reference GND and being interconnected at an output terminal OUT of the operational amplifier; the first output transistor has a control terminal connected to an output terminal of the input stage 10.
The level shifter stage 12 comprises a couple of a first M5 and a second M9 intermediate transistors, connected in series to each other by means of an impedance, that is the parallel of a resistance R and a capacitor C, and coupled between a first voltage reference Vdd and a second voltage reference GND; specifically, the transistors of the level shifter stage 12 are MOS transistors and the source terminal A of the first transistor M5 is coupled with the drain terminal B of the second transistor M9 by means of the parallel of the resistance R and the capacitor C. The first intermediate transistor M5 has the control terminal connected with one output terminal of the input stage 10 and the second intermediate transistor M9 has the output terminal connected with the control terminal of the second output transistor M7; the second intermediate transistor M9 has the control terminal connected to an output terminal of a control circuit 13. The second intermediate transistor acts as a current generator.
The control circuit 13 comprises at least one transistor differential pair M8a, M8b having a differential input terminals B′ and A′. The differential voltage VA′−VB′ applied at the input terminals A′ and B′ controls the level shifter stage 12. In fact the level shifter stage 12 controls the output quiescent current Iout of the output stage 11 of the operational amplifier by means of the voltage difference between the voltages at the terminals A and B; the control circuit 13 is configured so that the differential voltage VA′−VB′ is equal to the differential voltage VA−VB applied at the terminals A and B. Particularly, the level shifter stage 12 fixes the voltage VA while the voltage VB is varied by the control circuit 13.
The control circuit 13 comprises replica circuits based on transistors M7r, M6r and M5r. The term “replica” is used herein to refer to a copy or duplicate of an original, which may be of different scale to the original. Preferably, the transistors M7r, M6r and M5r are a scaled version of transistors M7, M6 and M5 respectively. The scaling value depends on the current ratio desired between transistors M5 and M5r=M5/k, M6 and M6r=M6/n, M7 and M7r=M7/n. This ratio of current in the stages 10, 11 and 12 and in the replica-circuit branches is configured to reduce the current consumption of the control circuit 13.
The control circuit 13 comprises circuit branches 14, 15 connected with the input terminals B′, A′ of the differential pair M8a, M8b; the circuit branches 14, 15 are replica circuits of the respective circuit branches which are connected with the respective terminals B and A and which are formed by the transistor M7 and M5, M6 among the output stage 11 and the level shifter stage 12.
The currents of the transistors M7r, M6r and M5r are fixed through current sources to a scaled value of the desired current flowing through the transistors M7, M6 and M5. This allows to evaluate the desired voltage on the node A and B with process and temperature variations. The evaluated value is available at the node A′ and B′.
The control circuit 13 comprises first and second circuit branches 14, 15 respectively formed by the transistor M7r wherein the bias current Ioutr flows, and by the transistor M6r wherein the bias current Ioutr flows and the transistor M5r having the gate terminal connected with the gate terminal and with the drain terminal of the transistor M6r. The drain and source terminals of the transistors M7r, M5r are connected to the terminals of the differential pair M8a, M8b so as the differential voltage VA′−VB′, is proportional to the bias current Ioutr.
A transistor M9r forms a mirror with the transistor M9 of the level shifter stage. The transistor M9r has the gate and the drain terminals connected with the drain terminal of the transistor M8a; another transistor M9r has the gate and the drain terminals connected only with the drain terminal of the transistor M8b.
The differential pair M8a, M8b, compares the voltages VA′ and VB′ and change the value of current in the transistor M9r from IBr to the value IBr−ΔI with ΔI=(VA′−VB′)/Rr. This current is mirrored in the transistor M9 with a mirror factor k. The current flowing through M9 is k·(IBr+ΔI). If the currents IB and IBr, are related by IB=k·IBr, an extra current k·ΔI flows through the resistor R and produces a variation k·ΔI·R between the voltage of the node A and B, that is VA−VB=k·ΔI·R=k·R·(VA′−VB′)/Rr. If the relation chosen between R and Rr is Rr=k·R then it has VA−VB=VA′−VB′; the control circuit 13 guarantees at the node A and B the voltage which is necessary in order to have the desired current Iout=n·Ioutr in the output stage M7−M6 with process and temperature variations, that is each variation of the current Ioutr determines a variation of the current Iout of the output stage 11 of the operational amplifier in class AB.
Since the transistors M8a, M8b are configured as follower transistors, the voltage difference at the terminals of the resistance Rr is the voltage difference VA′−VB′. The voltage VA′ is given by the sum of the gate-source voltages of the transistors M6r and M5r, that is
wherein VTp is the voltage threshold to the PMOS transistor, VTn is the voltage threshold to the NMOS transistor, W/L is the form factor and Kp and Kn are constants. The voltage VB′ is given by the difference between the supply voltage Vdd and the gate-source voltage of the transistor M7r, that is
The voltage VA is given by the sum of the gate-source voltages of the transistors M6 and M5, that is
and the voltage VB is given by the difference between the supply voltage Vdd and the gate-source voltage of the transistor M7, that is
Since VA−VB=VA′−VB′ with Rr=k·R and IB=k·IBr by selecting
it occurs Iout=n×Ioutr.
This configuration has the advantage to eliminate the dependency of the output stage quiescent current on transistor process variation and supply voltage while controlling this current in an open loop manner which does not affect the frequency response and stability of the amplifier.
As above mentioned
While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Number | Date | Country | Kind |
---|---|---|---|
M12011A001832 | Oct 2011 | IT | national |
The present invention is a continuation of U.S. patent application Ser. No. 13/562,071 filed Jul. 30, 2012 and is a translation of and claims the priority benefit of Italian patent application number M12011 A001832, filed on Oct. 7, 2011, entitled High Performance Class AB Operational Amplifier, which are hereby incorporated by reference to the maximum extent allowable by law.
Number | Name | Date | Kind |
---|---|---|---|
4543665 | Sotelo et al. | Sep 1985 | A |
4549146 | Cowans et al. | Oct 1985 | A |
5285168 | Tomatsu et al. | Feb 1994 | A |
6084476 | Hamanishi et al. | Jul 2000 | A |
6400184 | Shoji et al. | Jun 2002 | B1 |
7154332 | Tsuchi | Dec 2006 | B2 |
7170351 | Shimatani | Jan 2007 | B2 |
7339429 | Maki | Mar 2008 | B2 |
7403033 | Bales | Jul 2008 | B2 |
7728669 | Liu | Jun 2010 | B2 |
8310428 | Nakayama | Nov 2012 | B2 |
8390609 | Tsuchi | Mar 2013 | B2 |
20090140778 | Kikuchi et al. | Jun 2009 | A1 |
Number | Date | Country |
---|---|---|
0 123 275 | Oct 1984 | EP |
Entry |
---|
Italian Search Report, application No. MI2011A001832, dated Jul. 12, 2012, pp. 7. |
Ludwig G. A. Callewaert et al., Class AB CMOS Amplifiers with High Efficiency, IEEE Journal of Solid-State Circuits, vol. 25, No. 3, Jun. 1990, pp. 684-691. |
Ron Hogervorst et al., A Compact Power-Efficient 3 V CMOS Rail-to-Rail Input/Output Operational Amplifier for VLSI Cell Libraries, IEEE Journal of Sold-State Circuits, vol. 29, No. 12, Dec. 1994, pp. 1505-1513. |
G. Palmisano et al., article, Very efficient CMOS low-voltage output stage, Electronics Letters, Oct. 12, 1995, vol. 31, No. 21, pp. 1830-1831. |
Takashi Kurashina et al., A High Performance Class AB Current Conveyor, IEEE, Jan. 1998, pp. 143-146. |
H.A. Aslanzadeh et al., A Low Power 25MS/S 12-Bit Pipelined Analog to Digital Converter for Wireless Applications, Aug. 2003 IEEE, SSMSD, pp. 38-42. |
Babanezhad, J.,“A rail-to-rail CMOS op amp,” !IEEE JSSCC, vol. 23, No. 6, Dec. 1988, pp. 1414-1417. |
Number | Date | Country | |
---|---|---|---|
20140292411 A1 | Oct 2014 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 13562071 | Jul 2012 | US |
Child | 14304589 | US |