Claims
- 1. A method of making a nanostructured metallic material comprising the steps of:
providing a metallic material; deforming the metallic material wherein a plurality of dislocation cell structures are formed; annealing the metallic material at a temperature from about 0.3 to about 0.7 of its absolute melting temperature; and cooling said metallic material to produce nanostructured material.
- 2. The method of claim 1, wherein said temperature is from about 0.37-0.53 of its absolute melting temperature.
- 3. The method of claim 1, wherein said temperature is from about 0.39 to about 0.44 of its absolute melting temperature.
- 4. The method of claim 1, wherein said temperature is at least about 350 degrees Celsius.
- 5. A method of adjusting the tensile strength of a nanostructured material comprising:
providing a metallic material; deforming the metallic material wherein a plurality of dislocation cell structures are formed; annealing the metallic material at a temperature from about 0.30 to 0.70 of its absolute melting temperature for a time from about 1000 hours to several seconds; and cooling the metallic material.
- 6. A method of adjusting the ductility of a nanostructured crystalline material comprising the steps of:
providing a metallic material; deforming said metallic material so that a plurality of dislocation cell structures are formed; annealing said metallic material at a temperature from about 0.37 to 0.53 of its absolute melting temperature for a period of time from 50 hours to several minutes; and cooling said metallic material after said annealing step.
- 7. A method of adjusting the ductility of a nanostructured crystalline material comprising the steps of:
providing a metallic material; deforming said metallic material so that a plurality of dislocation cell structures are formed; annealing said metallic material at a temperature from about 0.39 to about 0.44 of its absolute melting temperature for a period of time from about 20 hours to about 1 hour, wherein the temperature and time are selected to achieve a ductility of at least about 1% plastic strain-to-failure and a tensile elastic yield strain of at least about 0.5%; and cooling said metallic material after said annealing step.
- 8. The method of claim 5 wherein said deforming step further comprises cold rolling said metallic material with a thickness reduction ratio in the range from about 50% to about 95%.
- 9. The method of claim 8 wherein said thickness reduction ratio is at least about 90%.
- 10. The method of claim 8 wherein said thickness reduction ratio is at least about 80%.
- 11. A nanostructured metallic material having a tensile yield strength of at least about 1.5 GPa and a ductility of at least about 1 percent strain-to-failure.
- 12. The nanostructured material of claim 11, further comprising microstructures with an average grain size ranging from about 10 nanometers to about 900 nanometers.
- 13. The nanostructured material of claim 11, further comprising microstructures with an average grain size of at least 10 nanometers.
- 14. The nanostructured material of claim 11 having a tensile elastic yield strain of at least about 0.5% and a ductility from about 1 to about 18 percent plastic strain-to-failure.
- 15. The nanostructured material of claim 11, wherein said ductility is from between 1.3 to about 5.5 percent plastic strain-to-failure.
- 16. The nanostructured material of claim 11, wherein said the nanostructured material has a Vicker's hardness of about 5.5 to about 10 GPa.
- 17. Nanostructured magnetic materials, wherein the materials are cold-rolled and annealed at a temperature ranging from about 350 to about 705 degrees Celsius, have a room temperature yield strength in excess of about 1.2 GPa and tensile ductility in excess of about 1% plastic strain-to-failure.
- 18. The nanostructured magnetic materials of claim 17, wherein the materials consist essentially of about 0.003% to about 0.02% C, no more than about 0.10% Mn, no more than about 0.10% Si, no more than about 0.01% P, no more than about 0.003% S, no more than about 0.1% Cr, no more than about 0.2% Ni, no more than about 0.1% Mo, from about 48 to about 50% Co, from about 1.8 to about 2.2% V, from about 0.03 to about 0.5% Nb, no more than about 0.004% N, and no more than 0.006% O, and iron as the balance.
- 19. The nanostructured magnetic materials of claim 17, wherein said materials consist essentially of 48.78% cobalt, 1.92% vanadium, 0.06% niobium, 0.012% carbon, 0.1% nickel, balanced with iron.
- 20. A nanostructured metallic material having a tensile yield strength of at least about 400 MPa and a ductility of at least about 5 percent strain-to-failure.
- 21. The nanostructured material of claim 20 wherein the ductility is at least 30 percent strain-to-failure.
- 22. The nanostructured material of claim 20 wherein the metal comprises copper.
- 23. The nanostructured material of claim 20 wherein the metal consists essentially of copper.
- 24. The nanostructured material of claim 20 wherein the nanostructured metal has a strength in excess of 3 times the strength of the conventional coarse-grained metal and a ductility in excess of 50 percent strain-to-failure.
- 25. The method of claim 1 wherein the nanostructured metallic material is metal and the deformation comprises cold working the metal.
- 26. The method of claim 25 wherein the metal is cold worked at liquid nitrogen temperature.
- 27. The method of claim 25 wherein the cold worked metal is heat treated to recrystallization and secondary recrystallization.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is continuation-in-part of U.S. patent application Ser. No. 09/970,402 filed by T. Weihs et al. on Nov. 3, 2001 and entitled “High Performance Nanostructured materials and Method of Making the Same” which, in turn, claims the benefit of U.S. Provisional Application Serial No. 60/237,732 filed by C. H. Shang et al. on Oct. 5, 2000 and entitled “High Performance Nanostructured Materials and Methods of Making the Same”. Application Ser. Nos. 09/970,402 and 60/237,732 are incorporated herein by reference.
GOVERNMENT INTEREST
[0002] The United States Government has certain rights in this invention pursuant to Contract Number N00014-98-10600 supported by ONR and pursuant to Grant Number CMS-9877006 supported NSF.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60237732 |
Oct 2000 |
US |
|
60445700 |
Feb 2003 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09970402 |
Oct 2001 |
US |
Child |
10425207 |
Apr 2003 |
US |