Patent Application
20160086739
The present invention concerns solar cells, in particular sensitized solar cells, organic-inorganic perovskite films and/or layers, heterojunctions, working electrodes, photoanodes, and methods for producing the same. The invention further relates to methods of applying organic-inorganic perovskites on a mesoscopic, nanoporous and/or nanostructured surface.
Dye-sensitized solar cells (DSCs) are one of the most promising third-generation photovoltaic (PV) technologies. Solid-state DSC embodiments have emerged as viable contenders where the electrolyte is replaced by a solid state hole transporting material (HTM), such as the triarylamine derivative 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-MeOTAD) [Bach, U. et al. Solid-state dye-sensitized mesoporous TiO2 solar cells with high photon-to-electron conversion efficiencies. Nature 1998, 395, 583-585] or more recently a tin halide perovskite [Chung, I.; Lee, B.; He, J.; Chang, R. P. H.; Kanatzidis, M. G. All-solid-state dye-sensitized solar cells with high efficiency. Nature 2012, 485, 486-489].
Despite achieving remarkable power-conversion efficiencies (PCEs) of 7% [Burschka, J. et al. Tris(2-(1H-pyrazol-1-yl)pyridine)cobalt(III) as p-type dopant for organic semiconductors and its application in highly efficient solid-state dye-sensitized solar cells. J. Am. Chem. Soc. 2011, 133, 18042-18045] and 8.5% [Chung, I.; Lee, B.; He, J.; Chang, R. P. H.; Kanatzidis, M. G. All-solid-state dye-sensitized solar cells with high efficiency. Nature 2012, 485, 486-489] for the spiro-MeOTAD and tin halide perovskite based systems, respectively, the performance of solid-state DSCs has so far been lagging behind their liquid counterparts that presently reach a PCE of 12.3% [Yella, A. et al. Porphyrin-sensitized solar cells with cobalt (II/III)-based redox electrolyte exceed 12 percent efficiency. Science 2011, 334, 629-634]. The difference arises mainly from the 10-100 times faster charge carrier recombination in the solid-state device compared to the liquid electrolyte based counterpart. In order to collect most of the photogenerated charge carriers the thickness of the nanocrystalline oxide film is usually kept below 3 μm reducing the light harvesting by the molecular sensitizer and hence the short-circuit photocurrent (Jsc) and conversion efficiency of the device [Schmidt-Mende, L.; Zakeeruddin, S. M.; Grätzel, M. Efficiency improvement in solid-state-dye-sensitized photovoltaics with an amphiphilic ruthenium-dye. Appl. Phys. Lett. 2005, 86, 013504]. Inspired by inorganic thin-film photovoltaics, many attempts have been made to increase the optical absorption cross-section of the light harvesters in the solid-state DSC. One approach is to replace the molecular sensitizer by semiconductor quantum dots, such as PbS, CdS or Sb2S3, where the semiconductor nanoparticles often assume a dual role of absorbing light and transporting charge carriers [Hodes, G.; Cahan, D. All-solid-state, semiconductor-sensitized nanoporous solar cells. Acc. Chem. Res. 2012, 45, 705-713]. While the performance of quantum dot based solar cells has progressed recently in an impressive manner reaching a PCE of 7.5% [Nine, D†, Zhitomirskyt†, D, Adinolfi, V, Sutherland, B, Xu, J, Voznyy, O, Maraghechi, P, Lan, X, Hoogland, S, Yuan, R, Sargent E. H. Graded doping for enhanced colloidal quantum dot photovoltaics. Adv. Mater. 2013, 25, 1719-1723], it remains still below that of other solid-state mesoscopic photovoltaics.
Recently, Kojima et al. introduced solution-processable hybrid organic-inorganic perovskites of the formula CH3NH3PbX3 (X=Br, I) as sensitizers for DSCs reaching a PCE of 3.8% in conjunction with mesoporous TiO2 and a iodide/triiodide based liquid electrolyte [Kojima, A.; Teshima, K.; Shirai, Y.; Miyasaka, T. Organometal halide perovskites as visible-light sensitizers for photovoltaic cells. J. Am. Chem. Soc. 2009, 131, 6050-6051]. Im et al. later improved the PCE to 6.5% by optimizing the composition of the redox electrolyte [Im, J.-H. et al. 6.5% efficient perovskite quantum-dot-sensitized solar cell. Nanoscale 2011, 3, 4088-4093]. In both cases, the photovoltaic devices suffered from poor stability due to the rapid dissolution of the perovskite in the liquid electrolyte. This problem could be overcome by using a solid-state configuration, employing the aforementioned spiro-MeOATD as a hole transporter. In this manner Kim et al. achieved a PCE of 9% [Kim, H.-S. et al. Lead iodide perovskite sensitized all-solid-state submicron thin film mesoscopic solar cell with efficiency exceeding 9%. Sci. Rep. 2012, 2, 591]. At the same time, Lee et al. showed that such a device works even better when the semiconducting mesoporous TiO2 film was replaced by an insulating Al2O3 scaffold, indicating rapid electron transport through the perovskite phase [Lee, M. M.; Teuscher, J.; Miyasaka, T.; Murakami, T. N.; Snaith, H. J. Efficient hybrid solar cells based on meso-superstructured organometal halide perovskites. Science 2012, 338, 643-647]. While reaching an impressive PCE of 10.9% with their champion cell, Lee et al. reported on very poor reproducibility and a large spread of photovoltaic device performance. Since the publication of these pioneering studies, several investigations have followed up on this concept [Etgar, L. et al. Mesoscopic CH3NH3PbI3/TiO2 heterojunction solar cells. J. Am. Chem. Soc. 2012, 134, 17396-17399; Im, J.-H.; Chung, J.; Kim, S.-J.; Park, N.-G. Synthesis, structure, and photovoltaic property of a nanocrystalline 2H perovskite-type novel sensitizer (CH3CH2NH3)PbI3. Nanoscale Res. Lett. 2012, 7, 353; Edri, E.; Kirmayer, S.; Cahen, D.; Hodes, G. High open-circuit voltage solar cells based on organic-inorganic lead bromide perovskite. Phys. Chem. Lett. 2013, 4, 897-902; Crossland, E. J. W. et al. Mesoporous TiO2 single crystals delivering enhanced mobility and optoelectronic device performance. Nature 2013, 495, 215-219; Noh, J. H.; Im, S. H.; Heo, J. H.; Mandal, T. N.; Seok, S. I. Chemical management for colorful, efficient, and stable inorganic-organic hybrid nanostructured solar cells. Nano Lett. 2013, DOI: 10.1021/n1400349b; Cai, B.; Xing, Y.; Yang, Z.; Zhang, W.-H.; Qiu, J. High performance hybrid solar cells sensitized by organolead halide perovskites. Energy Environ. Sci. 2013, DOI: 10.1039/c3ee40343b; and Qui, J. et al. All-solid-state hybrid solar cells based on a new organometal halide perovskite sensitizer and one-dimensional TiO2 nanowire arrays. Nanoscale 2013, 5, 3245-3248]. In all this previous work, the perovskite pigment was applied from a of a solution of the two precursors, PbX2 (X=I, Br or Cl) and CH3NH3I, in a common solvent, i.e. N,N-dimethylformamide (DMF) or γ-butyrolactone (GBL).
From our own experience, we find that there is a lack of control of the morphology of the perovskite crystals formed during this kind of solution processing, which is most likely the reason for the poor reproducibility of PV cell performance.
The present invention addresses disadvantages of devices comprising liquid electrolytes, such as the problem of solvent evaporation and the penetration of water into the solar cell caused by difficulty in long-term sealing especially in temperature cyclic tests.
It is a further objective of the invention to provide solar cells, in particular solid state solar cells having yet higher conversion efficiencies than prior art devices. A light to electrical power energy conversion efficiency (η) of about 10% was suggested to be a level necessary for commercial use.
The invention seeks to provide an efficient solar cell that can be prepared rapidly in an efficient, reproducible way, using readily available, low-cost materials, using a short manufacturing procedure based on industrially known manufacturing steps.
The present invention addresses the problems of stability observed with certain sensitized solar cells.
Remarkably, we report a new sequential deposition technique to produce organic-inorganic perovskite films on nanoporous surfaces.
In an aspect, the invention provides methods comprising: a step of applying and/or depositing a film comprising and/or consisting essentially of one or more divalent or trivalent metal salts; and a step of applying and/or depositing one or more ammonium halide salts or inorganic halide salts.
The invention provides methods comprising the steps of:
a) applying and/or depositing a film comprising and/or consisting essentially of one or more divalent or trivalent metal salts; and.
b) applying and/or depositing one or more organic ammonium salts, wherein steps a) and b) may be conducted in any order, and in said a) and/or b), said one or more divalent or trivalent metal salts and/or said one or more organic ammonium salts is applied and/or deposited on a nanoporous layer and/or surface.
According to an embodiment, the invention provides more specifically the steps of:
c) applying and/or depositing a film comprising and/or consisting essentially of one or more divalent or trivalent metal salts on a nanoporous layer;
d) exposing and or contacting the film obtained in step a) to a solution comprising one or more organic ammonium salts in a solvent.
In an aspect, the invention provides a method for producing a solar cell, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for applying and/or producing a sensitizer on a nanoporous surface and/or layer, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for applying and/or producing a perovskite layer on a nanoporous surface and/or layer, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for coating a nanoporous layer and/or a semiconductor layer, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for producing a photoanode and/or a working electrode, for example for a solar cell, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for producing a heterojunction, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for producing a nanocrystalline organic-inorganic perovskite layer, the method comprising the steps a) and b) of the invention.
In an aspect, the invention provides a method for applying and/or producing a perovskite layer on a surface and/or layer having any one or more of the following characteristics:
In an aspect, the present invention provides a method for producing a solar cell, the method comprising the steps of:
In an aspect, the invention provides a method for producing a solar cell, the method comprising the steps of:
In an aspect, the invention provides a method for producing a nanocrystalline organic-inorganic perovskite layer, the method comprising the steps of:
In an aspect, the invention provides a method for producing a nanocrystalline organic-inorganic perovskite layer, the method comprising the steps of:
In an aspect, the invention provides a nanocrystalline organic-inorganic perovskite layer.
In further aspects, the invention provides organic-inorganic perovskite layer and solar cells obtainable by the methods of the invention.
In further aspects, the present invention provides a solar cell comprising a current collector, a nanoporous layer, a nanoporous scaffold structure, a perovskite layer and a counter electrode.
In an aspect, the invention provides a solar cell comprising a nanoporous layer and an organic-inorganic perovskite layer in contact with said nanoporous layer, wherein said perovskite comprises an organic-inorganic perovskite forming crystals of a length of <50 nm, preferably <45 nm, more preferably <40 nm.
In an aspect, the invention provides solar cell comprising organic-inorganic perovskite layer in contact with a nanoporous layer, wherein said solar cell exhibits a power conversion efficiency (PCE) of ≧12%, preferably ≧13% when exposed to AM1.5G light.
The present invention encompasses the formation of an organic-inorganic perovskite layer. Preferably, the organic-inorganic perovskite layer is provided on a surface and/or on a layer. Preferably, said surface and/or layer is structured, for example structured on a nanoscale.
A perovskite structure is any material with the same type of crystal structure as calcium titanium oxide (CaTiO3), known as the perovskite structure, or ABX3, which has a three-dimensional network of corner-sharing BX6 octahedra. The B component in the ABX3 structure is a metal cation that can adopt an octahedral coordination of X anions. The A cation is situated in the 12-fold coordinated holes between the BX6 octahedra and is most commonly inorganic. By replacing the inorganic cation with an organic cation, an organic-inorganic hybrid perovskite can be formed. A2BX4, ABX4, A3BX5 and A2A′BX5 perovskites are also considered members of his family.
In the perovskites according to the present invention, the A component in the ABX3 structure is an organic ammonium cation, such as a monovalent organic ammonium cation D or divalent organic ammonium cation E, as defined below in this specification; the B component in the ABX3 structure is a divalent or trivalent metal cation, such as divalent metal cation M or trivalent metal cation N, as defined below in this specification; and the X component in the ABX3 structure is an anion such as anion Y as defined below in this specification.
The nanostructured layer may also be referred to as a scaffold, as it preferably forms the support of the perovskite layer to be deposited and/or applied thereon. For example, the nanostructured layer may be referred to as a nanostructured or nanoporous scaffold or scaffold layer, for example. Furthermore, the nanostructured layer preferably has a nanostructured surface.
According to an embodiment, said the nanostructured layer has a surface area per gram ratio of 20 to 200 m2/g, preferably 30 to 150 m2/g, and most preferably 60 to 120 m2/g.
According to an embodiment, the nanoporous layer comprises and/or is prepared from nanoparticles, such as spherical nanoparticles, nanosheets, nanocolumns, nanotubes and/or nanoparticles of any other geometrical shape. The nanoparticles preferably have average dimensions and/or sizes in the range of 2 to 300 nm, preferably 3 to 200 nm, even more preferably 4 to 150 nm, still more preferably 5 to 100 nm, and most preferably 5 to 40 nm. “Dimension” or “size” with respect to the nanoparticles means here extensions in any direction of space, preferably the average maximum extension of the nanoparticles. In case of substantially spherical or ellipsoid particles, the average diameter is preferably referred to. In case of nanosheets, the indicated dimensions refer to the length and thickness. Preferably, the size of the nanoparticles is determined by transmission electron microscopy (TEM), scanning-electron microscopy (SEM) or Brunauer-Emmett-Teller (BET) surface area analysis as disclosed by Etgar et al.
According to an embodiment, the layer is nanocrystalline. Preferably, the crystallite size of the nanocrystalline layer is below 100 nm and more preferably below 50 nm. According to an embodiment, the surface is mesoporous. Preferably the pore diameter of the mesoporous surface is from 2 to 50 nm. According to an embodiment, the surface is nanoporous. Preferably the pore diameter of the nanoporous surface is below 50 nm.
According to an embodiment, the layer has a porosity of 20 to 90%, preferably 50 to 80% as determined by Brunauer-Emmett-Teller (BET) surface area analysis.
According to an embodiment, the nanoporous layer comprises and/or consists essentially of one or more selected from a metal oxide, a transition metal oxide, and a semiconductor material.
According to an embodiment, the nanoporous surface or layer has an overall thickness of 10 to 3000 nm, preferably 15 to 1500 nm, more preferably 20 to 1000 nm, still more preferably 50 to 800 nm and most preferably 100 to 500 nm.
According to an embodiment, the nanoporous layer comprises or consists essentially of Si, SiO2, TiO2, Al2O3, Ga2O3, Y2O3, In2O3, ZrO2, HfO2, SnO2, Fe2O3, ZnO, WO3, MoO3, Nb2O5, CdS, ZnS, PbS, Bi2S3, CdSe, CdTe, SrTiO3, GaP, InP, GaAs, CuInS2, CuInSe2, CaTiO3, SrTiO3, BaSnO3, Zn2SnO4, and combinations thereof.
According to a preferred embodiment, the nanoporous layer comprises, consists essentially of or consists of one or more selected from Si, TiO2, SnO2, Fe2O3, ZnO, WO3, Nb2O5, CdS, ZnS, PbS, Bi2S3, CdSe, CdTe, SrTiO3, GaP, InP, GaAs, CuInS2, CuInSe2, and combinations thereof.
Still more preferred materials of the nanoporous layer are Si, TiO2, SnO2, ZnO, WO3, Nb2O5 and SrTiO3, for example. TiO2, is most preferred.
The skilled person is aware of how to produce layers and/or surfaces having one or more of the above specified characteristics, for example nanoporous or nanostructured surfaces. For example, the layer may be prepared by screen printing or spin coating, for example as is conventional for the preparation of porous semiconductor (e.g. TiO2) layers in dye-sensitized solar cells, see for example, Thin Solid Films 516, 4613-4619 (2008) or Etgar et al., Adv. Mater. 2012, 24, 2202-2206. Nanoporous semiconductor structures and layers have been disclosed, for example, in EP 0333641 and EP 0606453.
In case a solar cell is to be produced, the nanostructured layer or scaffold is preferably provided on a current collector or on an underlayer, said underlayer being provided on a current collector. Said nanostructured layer and/or said perovskite layer is preferably in electric contact with said current collector.
For the purpose of the present specification, the expression “in electric contact with” means that electrons or holes can get from one layer to the other layer with which it is in electric contact, at least in one direction. In particular, considering the electron flow in the operating device exposed to electromagnetic radiation, layers through which electrons and/or holes are flowing are considered to be in electric contact. The expression “in electric contact with” does not necessarily mean that electrons and/or holes can freely move in any direction between the layers.
According to an embodiment, the solar cell of the invention preferably comprises one or more support layer. The support layer preferably provides the physical support of the device. Furthermore, the support layer preferably provides a protection with respect to physical damage and thus delimits the solar cell with respect to the outside, for example on at least one of the two major sides of the solar cell. According to an embodiment, the solar cell may be constructed by applying the different layers in a sequence of steps, one after the other, onto the support layer. The support layer may thus also serve as a starting support for the fabrication of the solar cell. Support layers may be provided on only one or on both opposing sides of the solar cell.
The support layer, if present, is preferably transparent, so as to let light pass through the solar cell. Of course, if the support layer is provided on the side of the solar cell that is not directly exposed to light to be converted to electrical energy, the support does not necessarily have to be transparent. However, any support layer provided on the side that is designed and/or adapted to be exposed to light for the purpose of energy conversion is preferably transparent. “Transparent” means transparent to at least a part, preferably a major part of the visible light. Preferably, the support layer is substantially transparent to all wavelengths or types of visible light. Furthermore, the support layer may be transparent to non-visible light, such as UV and IR radiation, for example.
Conveniently, and in accordance with a preferred embodiment of the invention, a conducting support layer is provided, said conducting support layer serving as support as described above as well as current collector. The conducting support layer thus replaces or contains the support layer and the current collector. The conducting support layer is preferably transparent. Examples of conducting support layers are conductive glass or conductive plastic, which are commercially available. For example, the conducting support layer comprises a material selected from indium doped tin oxide (ITO), fluorine doped tin-oxide (FTO), ZnO—Ga2O3, ZnO—Al2O3, tin-oxide, antimony doped tin oxide (ATO), SrGeO3 and zinc oxide, preferably FTO, coated on a transparent substrate, such as plastic or glass, preferably glass.
According to another embodiment, the current collector may also be provided by a conductive metal foil, such as a titanium or zinc foil, for example. Non-transparent conductive materials may be used as current collectors in particular on the side of the device that is not exposed to the light to be captured by the device. Such metal foils have been used as current collectors, for example, in flexible devices, such as those disclosed by Seigo Ito et al, Chem. Commun. 2006, 4004-4006.
According to a preferred embodiment, the nanoporous layer is provided on an underlayer and/or metal oxide layer. Preferably, the underlayer is provided between the current collector and said nanoporous layer. Preferably, the underlayer is conductive. The underlayer may be made from a metal oxide. Preferably, it is preferably made from a dense or compact semiconductor material. The underlayer may be made from the same materials as the nanoporous scaffold layer, but is typically less porous and denser. The underlayer may facilitate the application of the nanoporous layer and/or surface.
The underlayer preferably has a thickness of 1-120 nm (nanometer). It may be applied, for example, by atomic layer deposition (ALD). In this case, the thickness of this layer is preferably 1 nm to 25 nm. The underlayer may also be deposited by spray pyrolysis, for example, which typically results in a thickness of preferably 10 nm to 120 nm.
The method of the invention preferably comprises the steps of:
a) applying and/or depositing a film comprising one or more divalent or trivalent metal salts; and
b) applying and/or depositing one or more organic ammonium salts, wherein steps a) and b) may be conducted in any order, and in said a) and/or b), said one or more divalent or trivalent metal salt and/or said one or more organic ammonium salt is applied and/or deposited on said nanoporous layer and/or surface.
According to an embodiment, said one or more divalent or trivalent metal salts are selected from salts of formula MY2 or NY3, wherein:
M is a divalent metal cation selected from the group consisting of Cu2+, Ni2+, Co2+, Fe2+, Mn2+, Cr2+, Pd2+, Cd2+, Ge2+, Sn2+, Pb2+, Eu2+, or Yb2+;
N is selected from the group of Bi3+ and Sb3+;
any Y is independently selected from Cl−, Br−, I−, NCS−, CN−, and NCO−.
Preferably, said metal salt is MY2.
According to a preferred embodiment, said divalent or trivalent metal salt, preferably a divalent metal salt, is a metal halide. Preferably, in case two or more different divalent or trivalent metal salts, preferably two or more different divalent metal salts, are used, these are different metal halides.
According to a more preferred embodiment, the metal in said divalent or trivalent metal salt is Pb2+. According to another preferred embodiment, the halide in said divalent or trivalent metal salt is I−. According to another preferred embodiment, the divalent or trivalent metal salt is PbI2.
According to an embodiment, said organic ammonium salt is selected from DY and EY2, D being an organic, monovalent cation selected from primary, secondary, tertiary or quaternary organic ammonium compounds, including N-containing heterorings and ring systems, D having from 1 to 60 carbons and 1 to 20 heteroatoms; and E being an organic, divalent cation selected from primary, secondary, tertiary or quaternary organic ammonium compounds having from 1 to 60 carbons and 2 to 20 heteroatoms and having two positively charged nitrogen atoms. Preferably, said organic ammonium is selected from DY. More preferably, D is a monovalent ammonium cation. Preferably Y is a halide, more preferably I−. More preferably DY is an halide, preferably a iodide, of a primary ammonium compound, even more preferably a C1 to C4 alkyl ammonium halide, even more preferably a C1 to C3 alkyl ammonium halide, and still more preferably a C1 to C2 alkyl ammonium halide, the most preferred methyl ammonium halide. In a more preferred embodiment, DY is selected from the group consisting of CH3CH2CH2NH3I, CH3CH2NH3I and CH3NH3I, still more preferably CH3NH3I.
Preferred embodiments for D, E, M, N and Y are disclosed elsewhere in this specification, for example with respect to preferred perovskites of the invention.
In the method of the invention, step a) is preferably conducted before step b), but the present invention also encompasses, in other embodiments, that step b) is conducted first and step a) thereafter.
According to an embodiment, said film comprising said one or more divalent or trivalent metal salt is applied and/or deposited (step a)) by any one or more selected from: deposition from solution, deposition from a dispersion, for example, from a colloidal dispersion, deposition by thermal evaporation, deposition by sputtering, electrodeposition, atomic-layer-deposition (ALD), and formation of the metal salt in situ, respectively, in-situ. The latter comprises the possibility of applying and/or depositing the divalent or trivalent metal salt in a two or multi-step process, for example by depositing a precursor onto the surface that is subsequently transformed into the divalent or trivalent metal salt.
Examples of deposition from solution encompass, for example, drop casting, spin-coating, dip-coating, curtain coating, spray-coating, and ink jetprinting for example.
According to an embodiment, said film comprising one or more divalent or trivalent metal salt is applied and/or deposited by spin-coating a solution of one or more said divalent or trivalent metal salts, preferably at 2000 rpm or more, preferably 3000 rpm or more. Said spin-coating may take place at 4000 rpm or more, preferably 5000 rpm or more and most preferably at 5500 rpm or more, for example 6000 rpm or more. Preferably, said spin-coating takes place for 1 s (second) to 10 minutes, preferably 2 s to 30 s.
The solvent used for the spin-coating may be any solvent that dissolves the one or more divalent or trivalent metal salts. Preferably, when the metal salt is PbI2, the solvent is N,N-dimethylformamide (DMF).
Preferably, the concentration of the one or more divalent or trivalent metal salts in the solution used for the spin-coating for obtaining the film comprising the one or more divalent or trivalent metal salt is 0.5 M or more, more preferably 0.8 M or more, still more preferably 0.9 M or more, still more preferable 0.95 M or more, even more preferably 1 M or more.
When more than one divalent metal salts are applied and/or deposited, the two different salts may be applied at the same time. For example, in case of deposition from a solution, the solution may contain different metal salts. Said different metals salts preferably differ with respect to the anion. Accordingly, divalent metals salts MYi2 and MYii2, or for example divalent metals salts MYi2, MYii2 and MYiii2 are deposited at the same time, for example are present in the same solution, M being a defined metal and Yi, Yii and Yiii being different anions selected from the above, preferably different halides. For example, Yi, Yii and Yiii are I−, Cl− and Br−, respectively.
According to an embodiment, the method of the invention comprises the steps of applying and/or depositing a film comprising two or more divalent metal salts selected from MYi2 MYii2 and MYiii2, wherein Yi, Yii and Yiii (charge not shown) are each different anions selected from I−, Cl−, Br−, I−, NCS−, CN−, and NCO−, preferably from I−, Cl−, and Br−.
A mixed perovskite is obtained if the film comprising divalent metal salts comprises MYi2 and MYii2, or MYi2, MYii2 and MYiii2, for example, is exposed to an organic ammonium salt in accordance with the invention, which may be selected, independently from any one of DYi, DYii and DYiii.
Preferably, if the film comprising divalent metal salts comprises MYi2 and MYii2, the organic ammonium salt is selected from salts comprising one of the anions contained in the divalent metal salt layer, for example from DYi or DYii.
According to an embodiment, the method of the invention comprises the step (e.g. step a)) of applying and/or depositing a film comprising MI2 and one selected from MCl2 and MBr2. For example, MI2 and MCl2 or MI2 and MBr2, respectively, are deposited from the same solution in which they are dissolved. According to an embodiment, the method of the invention comprises the step (e.g. step b)) of applying one or more, preferably one, organic ammonium salts DI to the divalent metal halides obtained in the previous step. Preferably, M is Pb and/or D is CH3NH3+.
According to another embodiment, the method of the invention comprises the step (e.g. step a)) of applying and/or depositing a film comprising MCl2 and one selected from MI2 and MBr2. For example, MCl2 and MI2 or MCl2 and MBr2, respectively, are deposited from the same solution in which they are dissolved. According to an embodiment, the method of the invention comprises the step (e.g. step b)) of applying one or more, preferably one, organic ammonium salt DCl to the metal halides obtained in the previous step. Preferably, M is Pb and/or D is CH3NH3+.
According to a preferred embodiment, step b) comprises applying and/or depositing one single and/or one structurally defined organic ammonium salt. Preferably, not a mixture of different organic salts is applied and/or deposited. This is preferably valid irrespective from whether a mixture of different divalent or trivalent metal salts or if a single type of divalent or trivalent metal salts was deposited in the method of the invention.
In accordance with an embodiment, in step a) a mixture of MiY2 with MiiY or MiiiY3 may be applied, said MiY2 and one from MiiY and MiiiY3 being preferably applied together/at the same time, for example deposited from the same solution. In this case Mii and Miii represent monovalent or trivalent cations, which would constitute a doping with a monovalent or trivalent metal salt, respectively. In the result, n-type or p-type doped metal salts and eventually perovskites can be obtained.
In accordance with the above said two different metal salts may be applied, differing with respect to the metal, but having, for example, identical anions. In this case, metals carrying different charges are preferably applied, resulting in doped perovskites.
According to a preferred embodiment, before exposing the applied and/or deposited film of said one or more divalent or trivalent metal salt (for example MY2 or NY3, respectively) to said organic ammonium salt solution, said metal salt is pre-wetted by exposing it to a solvent in the absence of said organic ammonium salt. The solvent used for pre-wetting is preferably the same as the solvent in which said organic ammonium salt is dissolved as disclosed elsewhere in this specification, or is otherwise a solvent in which said one or more divalent or trivalent metal salt is not or not easily soluble.
The invention comprises the step b) of applying and/or depositing an organic ammonium salt on a nanoporous layer. If step b) is conducted after step a), it preferably comprises or consists essentially of the step of exposing or contacting the film comprising the one or more divalent or trivalent metal salts obtained in step a) to a solution comprising one or more organic ammonium salts in a solvent.
The solvent for producing the solution comprising said one or more organic ammonium salts is preferably selected from solvents that are good solvents for the organic ammonium salt to be dissolved but a bad solvent for the divalent or trivalent metal salt, in particular MY2 or NY3. The solvent is preferably also a bad solvent (does not dissolve) for the resulting perovskite. By way of example, if the divalent metal salt is PbI2, and the organic ammonium salt is selected from the group consisting of CH3CH2CH2NH3I, CH3CH2NH3I and CH3NH3I, preferably CH3NH3I, then solvent is a C1 to C3 alcohol, such as methanol, ethanol, 1-propanol and/or 2-propanol, preferably 2-propanol.
The one or more divalent or trivalent metal salts may be exposed to or contacted with said solution comprising the organic ammonium salt by dipping the crystals and/or the one or more divalent or trivalent metal salts into said solution. For example, the nanoporous layer comprising the deposited one or more divalent or trivalent metal salt (e.g. MY2 or NY3) layer may be dipped into said solution of the organic ammonium salt.
According to an embodiment, said film comprising the one or more divalent or trivalent metal salt is exposed to or contacted with said solution comprising the one or more organic ammonium salt for 10 minutes or less, preferably 5 minutes or less, even more preferably 1 minute or less, or for the time periods given in the paragraph below.
According to an embodiment, said organic-inorganic perovskite is formed within <120 s, preferably <60 s following exposure of the film comprising the one or more divalent or trivalent metal salt to said solution comprising the one or more organic ammonium salt. More preferably, said organic-inorganic perovskite is formed within <45 s, preferably <30 s following exposure to said solution. In the case of dipping, the nanoporous layer comprising the deposited one or more divalent or trivalent metal salt layer may be dipped into said solution comprising the one or more organic ammonium salt for the time periods indicated above (<120 s, etc.). Exposure time (contacting, dipping) is preferably conducted for at least one second, more preferably at least two second.
Preferably, the steps in the methods according to the present invention are carried out only once, i.e. they are not repeated, in particular, the step of applying and/or depositing a film of one or more divalent or trivalent metal salts on the nanoporous layer, and the step of b) exposing and/or contacting the film obtained in the previous step to a solution comprising one or more organic ammonium salts in a solvent, thereby obtaining a layer comprising an organic-inorganic perovskite.
Surprisingly, the method of the invention yields divalent or trivalent metal salt crystals, in particular MY2 or NY3 crystals, and eventually perovskite crystals, of smaller sizes, for example of shorter length than the respective crystals reported in the prior art. “Size” or “length”, for the purpose of the present specification, refer to the maximum extension along an axis, and is preferably expressed in nanometers (nm).
According to an embodiment, the size of crystals of said film comprising the one or more divalent or trivalent metal salt and/or of said organic-inorganic perovskite obtained in the method of the invention are <50 nm, preferably <45 nm, more preferably <40 nm. Still more preferably, said crystals are <35 nm, preferably <30 nm, most preferably <25 nm.
Preferably, the majority of the crystals have the indicated size, more preferably at least 70% of the crystals. Most preferably, crystals, which are longer than indicated above (for example, >50 or >45 nm, etc.), are substantially or totally absent, in particular inside the pores of said nanoporous layer, but preferably in the perovskite layer as a whole.
According to an embodiment, the layer comprising said perovskite and/or said layer comprising said sensitizer is substantially free of said divalent or trivalent metal salt. In other words, the conversion into the perovskite is complete and occurs within the above-indicated time periods, for example within 25 seconds or 20 seconds. This applies in particular in case of divalent metal salt MY2 contacted with organic ammonium salt DY, yielding the DMY3 perovskite as described elsewhere in this specification.
According to an embodiment, the crystals formed during the step of applying and/or depositing said divalent or trivalent metal salt, MY2 or NY3, respectively, comprise 2H polytype crystals on said nanoporous scaffold layer. In addition, said divalent or trivalent metal salt MY2 or NY3 are present in the form of and/or contain additional crystals, which are different from said 2H polytype. Surprisingly, such other crystals are absent when said divalent or trivalent metal salt is deposited on a flat surface or a surface that is different from the nanostructured layer and/or surface of the invention.
According to an embodiment, the organic-inorganic perovskite material that is used and/or obtained in the one or more perovskite layer preferably comprises a perovskite-structure of any one of formulae (I), (II), (III), (IV), (V) and/or (VI) below:
DD′MY4 (I)
DMY3 (II)
DD′N2/3Y4 (III)
DN2/3Y3 (IV)
EN2/3Y4 (V)
EMY4 (VI)
wherein D′ is independently selected from the same monovalent organic cations as D, and D and E are as described elsewhere in this specification.
In formulae DD′N2/3Y4, DN2/3Y3 and EN2/3Y4, “2/3” means every third metal cation is missing. In this case, the perovskite is metal deficient. Preferably, M is Sn2+ or Pb2+, more preferably Pb2+. N is preferably selected from the group of Bi3+ and Sb3+.
In the perovskites of formulae (I) to (VI), any Y (for example any one Y in Y4) may be selected independently from Cl−, Br−, L, NCS−, CN−, and NCO−. Preferably, Y is halogen, preferably Y is selected from Br− or L, more preferably Y is L.
According to an embodiment, all anions in “Y3” and “Y4” are identical. According to a preferred embodiment, “Y3” and “Y4” contain at least two different anions. According to a preferred embodiment, “Y3” comprises two or more halides, in particular two. Preferably, Y3 is Yi2Yii, with Yi2 and Yii being independently selected from halides, preferably from Cl−, Br− and I−. Preferably, “Y3” is selected from I2Cl or I2Br, forming perovskites DMI2Cl and DMI2Br, respectively.
According to an embodiment, D and D′ are identical, resulting in perovskite of the formulae D2MY4, D2PbY4, D2SnY4, for formulae (I), (VIII) and (IX) (see below), for example. Preferably, D and D′ are identical and all Y are identical.
According to a preferred embodiment, the perovskite material has the structure selected from one or more of formulae (I) to (III), preferably (II).
According to a preferred embodiment, said organic-inorganic perovskite layer comprises a perovskite-structure of any one of the formulae (V), (VI), (VII), (VIII), (IX), (X) and (XI) below:
DPbY3 (V)
DSnY3 (VI)
DBi Y4 (VII)
DD′PbY4 (VIII)
DD′SnY4 (IX)
EPbY4 (X)
ESnY4 (XI)
wherein D, D′, E and Y are as defined elsewhere in this specification. Preferably, Y is preferably selected from Br− and I−, most preferably Y is I−.
According to a preferred embodiment, said organic-inorganic perovskite layer comprises a perovskite-structure of the formulae (V) to (IX), more preferably (V) and/or (VI) above.
According to an embodiment, D and D′, for example in DY and/or in any one of formulae (I) to (III), and (V) to (IX), are monovalent cations selected independently from any one of the compounds of formulae (1) to (8) below:
wherein,
any one of R1, R2, R3 and R4 is independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms.
According to an embodiment of said C1-C15 organic substituent any one, several or all hydrogens in said substituent may be replaced by halogen and said organic substituent may comprise up to fifteen (15) N, S or O heteroatoms, and wherein, in any one of the compounds (2) to (8), the two or more of substituents present (R1, R2, R3 and R4, as applicable) may be covalently connected to each other to form a substituted or unsubstituted ring or ring system. Preferably, in a chain of atoms of said C1-C15 organic substituent, any heteroatom is connected to at least one carbon atom. Preferably, neighboring heteroatoms are absent and/or heteroatom-heteroatom bonds are absent in said C1-C15 organic substituent comprising from 0 to 15 heteroatoms.
According to an embodiment any one of R1, R2, R3 and R4 is independently selected from C1 to C15 aliphatic and C4 to C15 aromatic or heteroaromatic substituents, wherein any one, several or all hydrogens in said substituent may be replaced by halogen and wherein, in any one of the compounds (2) to (8), the two or more of the substituents present may be covalently connected to each other to form a substituted or unsubstituted ring or ring system.
According to an embodiment, E is a divalent cation selected from any one of the compounds of formulae (9) and (10) below:
wherein, in the compound of formula (9), L is an organic linker structure having 1 to 10 carbons and 0 to 5 heteroatoms selected from N, S, and/or O, wherein any one, several or all hydrogens in said L may be replaced by halogen; wherein any one of R1 and R2 is independently selected from any one of the substituents (20) to (25) below:
wherein the dotted line in the substituents (20) to (25) represents the bond by which said substituent is connected to the linker structure L; wherein R1, R2, and R3 are independently as defined above with respect to the compounds of formulae (1) to (8); wherein R1 and R2, if they are both different from substituent (20), may be covalently connected to each other by way of their substituents R1, R2, and/or R3, as applicable, and wherein any one of R1, R2, and R3, if present, may be covalently connected to L or the ring structure of compound (10), independently from whether said substituent is present on R1 or R2; and wherein, in the compound of formula (10), the circle containing said two positively charged nitrogen atoms represents a substituted or unsubstituted aromatic ring or ring system comprising 4 to 15 carbon atoms and 2 to 7 heteroatoms, wherein said nitrogen atoms are ring heteroatoms of said ring or ring system, and wherein the remaining of said heteroatoms may be selected independently from N, O and S and wherein R5 and R6 are independently selected from H and from substituents as R1 to R4. Halogens substituting hydrogens totally or partially may also be present in addition to and/or independently of said 2 to 7 heteroatoms.
Preferably, if the number of carbons in L is impair, the number of heteroatoms is smaller than the number of carbons. Preferably, in the ring structure of formula (10), the number of ring heteroatoms is smaller than the number of carbon atoms.
According to an embodiment, L is an aliphatic, aromatic or heteroaromatic linker structure having from 1 to 10 carbons.
Preferably, the dotted line in substituents (20) to (25) represents a carbon-nitrogen bond, connecting the nitrogen atom shown in the substituent to a carbon atom of the linker.
According to an embodiment, in the compound of formula (9), L is an organic linker structure having 1 to 8 carbons and from 0 to 4 N, S and/or O heteroatoms, wherein any one, several or all hydrogens in said L may be replaced by halogen. Preferably, L is an aliphatic, aromatic or heteroaromatic linker structure having 1 to 8 carbons, wherein any one, several or all hydrogens in said L may be replaced by halogen.
According to an embodiment, in the compound of formula (9), L is an organic linker structure having 1 to 6 carbons and from 0 to 3 N, S and/or O heteroatoms, wherein any one, several or all hydrogens in said L may be replaced by halogen. Preferably, L is an aliphatic, aromatic or heteroaromatic linker structure having 1 to 6 carbons, wherein any one, several or all hydrogens in said L may be replaced by halogen.
According to an embodiment, in the compound of formula (9), said linker L is free of any O or S heteroatoms. According to an embodiment, L is free of N, O and/or S heteroatoms.
According to an embodiment, in the compound of formula (10), the circle containing said two positively charged nitrogen atoms represents a substituted or unsubstituted aromatic ring or ring system comprising 4 to 10 carbon atoms and 2 to 5 heteroatoms (including said two ring N-atoms).
According to an embodiment, said ring or ring system in the compound of formula (10) is free of any O or S heteroatoms. According to an embodiment, said ring or ring system in the compound of formula (10) is free of any further N, O and/or S heteroatoms, besides said two N-ring atoms. This does not preclude the possibility of hydrogens being substituted by halogens.
As the skilled person will understand, if an aromatic linker, compound, substituent or ring comprises 4 carbons, it comprises at least 1 ring heteroatom, so as to provide an aromatic moiety.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C8 organic substituents comprising, from 0 to 4 N, S and/or O heteroatom, wherein, independently of said N, S or O heteroatoms, any one, several or all hydrogens in said substituent may be replaced by halogen, and wherein two or more of substituents present on the same cation may be covalently connected to each other to form a substituted or unsubstituted ring or ring system. Preferably, any one of R1, R2, R3 and R4 is independently selected from C1 to C8 aliphatic, C4 to C8 heteroaromatic and C6 to C8 aromatic substituents, wherein said heteroaromatic and aromatic substituents may be further substituted.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C6 organic substituents comprising, from 0 to 3 N, S and/or O heteroatom, wherein, independently of said N, S or O heteroatoms, any one, several or all hydrogens in said substituent may be replaced by halogen, and wherein two or more of substituents present on the same cation may be covalently connected to each other to form a substituted or unsubstituted ring or ring system. Preferably, any one of R1, R2, R3 and R4 is independently selected from C1 to C6 aliphatic, C4 to C6 heteroaromatic and C6 to C6 aromatic substituents, wherein said heteroaromatic and aromatic substituents may be further substituted.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C4, preferably C1 to C3 and most preferably C1 to C2 aliphatic substituents wherein any one, several or all hydrogens in said substituent may be replaced by halogen and wherein two or more of substituents present on the same cation may be covalently connected to each other to form a substituted or unsubstituted ring or ring system.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C10 alkyl, C2 to C10 alkenyl, C2 to C10 alkynyl, C4 to C10 heteroaryl and C6 to C10 aryl, wherein said alkyl, alkenyl, and alkynyl, if they comprise 3 or more carbons, may be linear, branched or cyclic, wherein said heteroaryl and aryl may be substituted or unsubstituted, and wherein several or all hydrogens in R1-R4 may be replaced by halogen.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C8 alkyl, C2 to C8 alkenyl, C2 to C8 alkynyl, C4 to C8 heteroaryl and C6 to C8 aryl, wherein said alkyl, alkenyl, and alkynyl, if they comprise 3 or more carbons, may be linear, branched or cyclic, wherein said heteroaryl and aryl may be substituted or unsubstituted, and wherein several or all hydrogens in R1-R4 may be replaced by halogen.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C6 alkyl, C2 to C6 alkenyl, C2 to C6 alkynyl, C4 to C6 heteroaryl and C6 aryl, wherein said alkyl, alkenyl, and alkynyl, if they comprise 3 or more carbons, may be linear, branched or cyclic, wherein said heteroaryl and aryl may be substituted or unsubstituted, and wherein several or all hydrogens in R1-R4 may be replaced by halogen.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C4 alkyl, C2 to C4 alkenyl and C2 to C4 alkynyl, wherein said alkyl, alkenyl and alkynyl, if they comprise 3 or more carbons, may be linear, branched or cyclic, and wherein several or all hydrogens in R1-R4 may be replaced by halogen.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C3, preferably C1 to C2 alkyl, C2 to C3, preferably C2 alkenyl and C2 to C3, preferably C2 alkynyl, wherein said alkyl, alkenyl and alkynyl, if they comprise 3 or more carbons, may be linear, branched or cyclic, and wherein several or all hydrogens in R1-R4 may be replaced by halogen.
According to an embodiment, any one of R1, R2, R3 and R4 is independently selected from C1 to C4, more preferably C1 to C3 and even more preferably C1 to C2 alkyl. Most preferably, any one of R1, R2, R3 and R4 are methyl. Again, said alkyl may be completely or partially halogenated.
According to an embodiment, D, D′ and E are monovalent (D, D′) and divalent (E) cations, respectively, selected from substituted and unsubstituted C5 to C6 rings comprising one, two or more nitrogen heteroatoms, wherein one (for D and D′) or two (for E) of said nitrogen atoms is/are positively charged. Substituents of such rings may be selected from halogen and from C1 to C4 alkyls, C2 to C4 alkenyls and C2 to C4 alkynyls as defined above, preferably from C1 to C3 alkyls, C3 alkenyls and C3 alkynyls as defined above. Said ring may comprise further heteroatoms, which may be selected from O, N and S. Divalent organic cations E comprising two positively charged ring N-atoms are exemplified, for example, by the compound of formula (10) above. Such rings may be aromatic or aliphatic, for example.
D, D′ and E may also comprise a ring system comprising two or more rings, at least one of which being from substituted and unsubstituted C5 to C6 ring as defined as above. The elliptically drawn circle in the compound of formulae (10) may also represent a ring system comprising, for example, two or more rings, but preferably two rings. Also if D and/or D′ comprises two rings, further ring heteroatoms may be present, which are preferably not charged, for example.
According to an embodiment, however, the organic cations D, D′ and E comprise one (for D, D′), two (for E) or more nitrogen atom(s) but are free of any 0 or S or any other heteroatom, with the exception of halogens, which may substitute one or more hydrogen atoms in cation D and/or E.
D and D′ preferably comprise one positively charged nitrogen atom. E preferably comprises two positively charged nitrogen atoms.
D, D′ and E may be selected from the exemplary rings or ring systems of formulae (30) and (31) (for D) and from (32) to (34) (for E) below:
in which R1 and R2 are, independently, as defined above, and R3, R4, R5, R6, R7, R8, R9 and R10 are independently selected from H, halogen and substituents as defined above for R1 to R4. Preferably, R3-R10 are selected from H and halogen, most preferably H.
In the organic cations D, D′ and E, hydrogens may be substituted by halogens, such as F, Cl, I, and Br, preferably F or Cl. Such a substitution is expected to reduce the hygroscopic properties of the perovskite layer or layers and may thus provide a useful option for the purpose of the present specification.
Concerning the solar cells of the invention and the methods of producing them, said solar cell preferably comprises an intermediate layer selected from (a) a hole transport material, (b) a protective layer and (c) an ionic liquid, said intermediate layer being applied after obtaining said perovskite layer. The intermediate layer is preferably applied after and/or onto the perovskite layer.
By “hole transport material”, “hole transporting material”, “charge transporting material”, “organic hole transport material” and “inorganic hole transport material”, and the like, is meant any material or composition wherein charges are transported by electron or hole movement (electronic motion) across said material or composition. The “hole transport material” is thus an electrically conductive material. Such hole transport materials, etc., are different from electrolytes. In the latter, charges are transported by diffusion of molecules.
According to a preferred embodiment of the solar cell of the invention, said intermediate layer comprises a hole transport material selected from organic and inorganic hole transport materials.
According to a preferred embodiment, said intermediate layer comprises an organic hole transport material. Preferably, the solar cell of the invention comprises an intermediate layer, in particular an organic hole transport material, situated between said one or more perovskite layer and a counter electrode.
The skilled person is aware of a large variety of organic hole transport materials, such as the conducting polymers disclosed elsewhere in this specification. For example, in WO2007107961, a liquid and non-liquid organic hole conductor are disclosed, which may be used for the purpose of the present invention. Also in EP 1160888 and other publications organic hole transport materials (“organic electrically conducting agent”) are disclosed.
Preferred organic hole transport materials for the purpose of the present invention are are Spiro-OMeTAD (2,2′,7,7′-tetrakis-N,N-di-p-methoxyphenylamine-9,9′-spirobifluorene) and derivatives of PTAA (poly(triarlyamine)) such as (Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) or (Poly[bis(4-phenyl)(4-butylphenyl)amine]), preferably Spiro-OMeTAD. US 2012/0017995, disclosing further hole transport materials, is entirely incorporated herein by reference.
It is noted that the term “organic” in expressions “organic hole transport material”, “organic hole transport layer”, “organic charge transport material” and the like does not exclude the presence of further components. Further components may be selected from (a) one or more dopants, (b) one or more solvents, (c) one or more other additives such as ionic compounds, and (c) combinations of the aforementioned components, for example. In the organic charge transport material, such further components may be present in amounts of 0-30 wt. %, 0-20 wt. %, 0-10 wt. %, most preferably 0-5 wt. %.
Examples of ionic compounds that may be present in organic hole transport materials are TBAPF6, Na CF3SO3, Li CF3SO3, LiClO4 and Li[(CF3SO2)2N. Examples of other compounds that may be present in organic hole transport materials are amines, 4-tertbutylpyridine, 4-nonyl-pyridine, imidazole, N-methyl benzimidazole, for example.
According to another embodiment, the intermediate layer comprises and/or consists essentially of an inorganic hole transport material. A wide variety of inorganic hole transport materials is commercially available. Non-limiting examples of inorganic hole transport materials are CuNCS, CuI, MoO3, and WoO3. The inorganic hole transport material may or may not be doped.
According to an embodiment, the intermediate layer, for example said organic or inorganic hole transport material, removes holes from the perovskite material and/or provides new electrons from the counter electrode to the sensitizer. In other terms, the hole transport material transports electrons from the counter electrode to the perovskite material layer.
The intermediate layer may comprise and/or consist essentially of a protective layer. According to an embodiment, the protective layer preferably comprises a metal oxide. In particular, the protective layer may comprise or consist essentially of a material selected from Mg-oxide, Hf-oxide, Ga-oxide, In-oxide, Nb-oxide, Ti-oxide, Ta-oxide, Y-oxide and Zr-oxide. Ga-oxide is a preferred material for said protective layer. The protective layer preferably has a thickness of not more than 5 nm, preferably 4 nm or less, even more preferably 3 nm or less, and most preferably 2 nm or less. According to preferred embodiments, the protective layer has a thickness of 1.5 nm or less, and even 1 nm or less. Said metal “protective layer” is preferably a “buffer layer”.
According to an embodiment, of the solar cell and/or heterojunction of the invention said protective layer is provided by atomic layer deposition (ALD). For example, 2 to 7 layers are deposited by ALD so as to provide said protective layer. Accordingly, said protective layer is preferably a metal oxide multilayer.
According to an embodiment, the protective layer is as disclosed in the international application WO 2013/084029, filed on Dec. 8, 2011, which is entirely incorporated herein by reference.
According to another embodiment, the intermediate layer is absent and said counter electrode and/or metal layer is in direct contact with said perovskite layer and/or not separated by any further layer or medium from said perovskite layer.
The counter electrode faces the inorganic-organic perovskite layer or, if present, the intermediate layer towards the inside of the cell. The counter electrode may form the outmost layer and thus one of the outer surfaces of the cell. It is also possible that a substrate or support layer is present on one side of counter electrode.
The counter electrode generally comprises a catalytically active material, suitable to provide electrons and/or fill holes towards the inside of the device. The counter electrode may, for example, comprise one or more materials selected from (the group consisting of) Pt, Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C, conductive polymer, conductive oxide such as indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), ZnO—Ga2O3, ZnO—Al2O3, tin-oxide, antimony doped tin oxide (ATO), SrGeO3, and a combination of two or more of the aforementioned, for example. Conductive polymers may be selected from polymers comprising polyaniline, polypyrrole, polythiophene, polybenzene, polyethylenedioxythiophene, polypropylenedioxy-thiophene, polyacetylene, and combinations of two or more of the aforementioned, for example. Such conductive polymers may be used as hole transport materials.
The counter electrode may be applied as is conventional, for example by thermal evaporation of the counter electrode material onto the perovskite layer or onto the intermediate layer, if present.
The counter electrode is preferably connected to a current collector, which is then connected to the external circuit. As detailed with respect to the first side of the device, a conductive support such as conductive glass or plastic may be electrically connected to the counter electrode on the second side.
The solar cell of the invention is preferably a solid state solar cell. The solar cell of the invention is preferably a sensitized solar cell, such as a dye-sensitized solar cell (DSC), in which said organic-inorganic perovskite is and/or functions as a dye and/or sensitizer.
According to an embodiment, solar cell according to an embodiment of the invention exhibits a power conversion efficiency (PCE) of ≧13.5%, preferably ≧14%, more preferably ≧14.5%, and most preferably ≧15%, when exposed to AM1.5G light. Preferably, PCE is ≧14.2%, ≧14.4%, ≧14.6%, ≧14.8%. PCE is preferably determined as disclosed in the examples and under the conditions specified therein.
The photoanode and/or working electrode of the solar cell of the invention may be formed by the nanoporous layer, optionally together with the perovskite layer. According to an embodiment, the photoanode and/or working electrode is formed by the perovskite. This applies, for example, if the nanoporous layer is not a semiconductor and/or is not conducting, but fulfils exclusively a surface-increasing function and/or a structural support function for the perovskite. In this case, the perovskite layer is preferably also in direct physical contact with said underlayer and/or is in electric contact with said current collector.
Upon illumination, electrons are exited in the perovskite layer and injected into the semiconductor material of the nanoporous layer 3. From there, the electrons are pushed via the current collector 2 to an external circuit (not shown). New electrons are taken from the external circuit (not shown) connected to the counter electrode 6, which injects the electrons into the perovskite layer 4, thereby closing the electric circuit.
Solar cell 1.1 shown in
In an exemplary embodiment, the invention is based on the deposition of PbI2 by solution processing on the nanocrystalline oxide scaffold in a first step and the subsequent transformation of the PbI2 into the desired nanoscopic CH3NH3PbI3 perovskite pigment by contacting with a solution of CH3NH3I in a solvent that does not dissolve readily the PbI2.
We find that the reaction occurs within seconds and allows us to have much better control over the perovskite morphology compared to the previously employed route. We employ this method for the fabrication of perovskite-sensitized solar cells. The use of this new procedure results not only in an excellent reproducibility of photovoltaic device performance, but also enabled us to reach stable performance and a new record PCE of 15.0% using spiro-MeOTAD as a hole transporter.
The present invention will now be further illustrated by way of examples. These examples do not limit the scope of this invention, which is defined by the appended claims.
Materials.
Unless stated otherwise, all materials were purchased from Sigma-Aldrich (Switzerland) or Acros Organics (Belgium) and used as received. Spiro-MeOTAD was purchased from Merck KGaA (Germany). CH3NH3I was synthesized according to a reported procedure [Kim, H.-S. et al. Lead iodide perovskite sensitized all-solid-state submicron thin film mesoscopic solar cell with efficiency exceeding 9%. Sci. Rep. 2012, 2, 591].
Device Fabrication. First, laser-patterned, fluorine-doped tin-oxide (FTO) coated glass substrates (Tec15, Pilkington) were cleaned by ultrasonication in an alkaline, aqueous washing solution, rinsed with deionized water, ethanol and acetone and subjected to a O3/UV treatment for 30 min. A 20-40 nm thick TiO2 compact layer was then deposited on the substrates by aerosol spray pyrolysis at 450° C. using a commercial titanium diisopropoxide bis(acetylacetonate) solution (30% in 2-propanol, Sigma-Aldrich) diluted in ethanol (1:39, volume ratio) as precursor and oxygen as carrier gas. After cooling to room temperature the substrates were then treated in an 0.02 M aqueous solution of TiCl4 for 30 min at 70° C., rinsed with deionized water and dried at 500° C. during 20 min. The 350 nm thick mesoporous TiO2 layer composed of 20 nm sized particles was deposited by spin-coating at 5000 rpm for 30 s using a commercial TiO2 paste (Dyesol 18NRT, Dyesol), diluted in ethanol (2:7, weight ratio). After drying at 125° C., the TiO2 films were gradually heated to 500° C., baked at this temperature for 15 min and cooled to room temperature. Prior to their use, the films were again dried at 500° C. for 30 min. PbI2 was dissolved in N,N-dimethylformamide (DMF) under vigorous stirring and the solution kept at 70° C. during the deposition. The mesoporous TiO2 films were then infiltrated with PbI2 by spin coating a 1.0 M PbI2 solution in DMF at 6500 rpm for 90 s and dried at 70° C. for 30 min. After cooling to room temperature, the films were dipped in a solution of CH3NH3I in 2-propanol (10 mg ml−1) for 20 s, rinsed with 2-propanol and dried at 70° C. for 30 min. The hole-transporting material spiro-MeOTAD was then deposited by spin-coating at 4000 rpm for 30 s. The spin-coating formulation was prepared by dissolving 72.3 mg (2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene) (spiro-MeOTAD), 28.8 μl 4-tertbutylpyridine (TBP), 17.5 μl of a stock solution of ≧520 mg ml−1 lithium bis(trifluoromethylsulfonyl)imide (LiTFSI) in acetonitrile and 29 μl of a stock solution of 300 mg ml−1 Tris(2-(1H-pyrazol-1-yl)-4-tert-butylpyri-dine)cobalt(III) tris(bis(trifluoromethylsulfonyl)imide)) in acetonitrile in 1 ml chlorobenzene. Finally 80 nm of gold were thermally evaporated on top of the device to form the back contact. The device fabrication was carried out under controlled atmospheric conditions and a humidity of <1%.
For the fabrication of the champion device exhibiting a PCE of 15%, slightly modified conditions were used: Firstly, PbI2 was spin-cast at 6500 rpm for 5 s instead of 90 s. Secondly, the samples were subjected to a ‘pre-wetting’ by dipping in 2-propanol for 1-2 s prior to the dipping in the CH3NH3I/2-propanol solution.
Device Characterization.
Current-Voltage-Characteristics were recorded by applying an external potential bias to the cell while recording the generated photocurrent with a digital source meter (Keithley Model 2400). The light source was a 450 W xenon lamp (Oriel) equipped with a Schott K113 Tempax sunlight filter (Praezisions Glas & Optik GmbH) in order to match the emission spectrum of the lamp to the AM1.5G standard. Incident photon-to-electron conversion efficiency (IPCE) spectra were recorded as function of wavelength under a constant white light bias of approximately 5 mW/cm2 supplied by a white LED array. The excitation beam coming from a 300 W xenon lamp (ILC Technology) was focused through a Gemini-180 double monochromator (Jobin Yvon Ltd.) and chopped at approximately 2 Hz. The signal was recorded using a Model SR830 DSP Lock-In Amplifier (Stanford Research Systems). All measurements were conducted using a non-reflective metal aperture of ≧0.285 cm2 to define the active are of the device and avoid light scattering through the sides.
Longterm Stability.
For long-term stability tests, the devices were sealed in argon using a 50 μm thick hot-melting polymer and a microscopic cover slide and subjected to constant light-soaking at approximately 100 mW cm−2. The light source was an array of white LEDs (LXM3-PW51 4000K, Philips). During the testing, the devices were maintained at their maximum power point (MPP) using MPP-tracking and a temperature of about 45° C. JV curves were automatically recorded at different light intensities (0%, 1%, 10%, 50% and 100% sun) every 2 hours.
Optical Spectroscopy.
Mesoporous TiO2 films were deposited on microscopic glass slides and infiltrated with PbI2 following the above-mentioned procedure. The samples were then placed vertically in a standard cuvette of 10 mm path length using a Teflon holder. A solution of CH3NH3I in 2-propanol was then rapidly injected into the cuvette while monitoring either the photoluminescence or the optical transmission. Photoluminescence measurements were carried out on a Horiba Jobin Yvon Fluorolog spectrofluorometer. Optical absorption measurements were carried out on a Varian Cary 5 spectrophotometer.
X-Ray Diffraction (XRD) Measurements.
For XRD measurements TiO2 and TiO2/PbI2 nanocomposites were deposited on microscopic glass slides using the above-mentioned procedures. X-ray powder diagrams were recorded on an X'Pert MPD PRO from PANalytical equipped with a ceramic tube (Cu-anode, Kα wavelength 1.54060 Å), a secondary graphite (002) monochromator and a RTMS X'Celerator detector, and operated in BRAGG-BRENTANO geometry. The samples were mounted as is, and the automatic divergence slit and beam mask were adjusted to the dimensions of the thin films. A step size of 0.008° was chosen and an acquisition time of up to 7.5 min/°.
We prepared the mesoporous TiO2 (anatase) films by spin-coating a solution of colloidal TiO2 (anatase) particles onto a 30 nm thick compact TiO2 underlayer. The latter was deposited by aerosol spray pyrolysis on a transparent conducting oxide (TCO) coated glass substrate acting as electric front contact of the solar cell. PbI2 was then introduced into the TiO2 nanopores by spin-coating using a 1.0 M solution in DMF kept at 70° C. Further experimental details are provided in the methods section.
Dipping the TiO2/PbI2 composite film into a solution of CH3NH3I in 2-propanol (10 mg ml−1) changes its colour instantaneously from yellow to dark brown, indicating the formation of CH3NH3PbI3. We monitored the dynamics of the insertion reaction by optical absorption and emission as well as X ray diffraction (XRD) spectroscopy.
The green and red curves in
During the insertion reaction, we observe the appearance of a series of new diffraction peaks that are in good agreement with literature data of the tetragonal phase of the CH3NH3PbI3 perovskite [Baikie, T. et al. Synthesis and crystal chemistry of the hybrid perovskite (CH3NH3)PbI3 for solid-state sensitized solar cell applications. J. Mater. Chem. A 2013, DOI: 10.1039/c3ta10518k]. However when PbI2 is deposited on a flat film (blue curve,
In striking contrast to the behavior of thin films of lead iodide deposited on a flat support, the conversion of PbI2 nanocrystals in the mesoporous titania film is practically complete on a time scale of seconds as is evident from the immediate disappearance of its most intense (001) diffraction peak and the concomitant appearance of the XRD reflections for the tetragonal peroskite. When the PbI2 crystals are contained within the mesoporous TiO2 scaffold their growth is limited to ca. 22 nm by the pore size of the host. Importantly we find that confining the PbI2 crystals to such small size enhances dramatically their rate of conversion to the perovskite, which is complete within a few seconds of contacting by the methylammonium iodide solution. On the other hand, when deposited on a flat surface, larger PbI2 crystallites in the size range of 50-200 nm are formed as shown by the SEM photographs presented in
Specifically,
A key finding of the present work is that the confinement of the PbI2 within the nanoporous network of the TiO2 film greatly facilitates their conversion to the perovskite pigment. Moreover the mesoporous scaffold of the host forces the perovskite to adapt a similar nano-morphology as the PbI2 precursor. As will be shown below such composite nanostructures are very efficient in harvesting sunlight and converting it to electric power, opening up a new pathway to realizing solar cells with excellent photovoltaic performance and stability.
We used the sequential deposition technique to fabricate mesoscopic solar cells employing the triarylamine-derivative spiro-MeOTAD as a hole transport material (HTM).
We measured the current-voltage characteristics of the solar cells under simulated air mass (AM) 1.5 global (G) solar irradiation and in the dark.
In an attempt to increase the loading of the perovskite absorber on the TiO2 structure and obviate the lack of absorption in the red region of the spectrum, we slightly modified the conditions for the deposition of the PbI2 precursor as well the transformation reaction. Details are provided in the experimental section. The JV-characteristics of a champion cell that was fabricated in this manner are depicted in
In order to test the stability of the perovskite based photovoltaics prepared using the aforementioned procedure we subjected a sealed cell to long term light soaking at ca. 100 mW cm−2 light intensity and 45° C. The device was encapsulated in argon and is maintained under optimal operating conditions during the ageing using maximum power point (MPP) tracking. We find a very promising long-term stability as the photovoltaic device maintains above 80% of its initial PCE after a period of 500 h. Even more importantly, we do not observe any change in short-circuit photocurrent, indicating that there is no photo-degradation of the perovskite light-harvester. The decrease in PCE is therefore only due to a decrease in both open-circuit potential and FF, whereas the similar shape of both decays suggests that they are both linked to the same degradation mechanism. The change in these two parameters is due to a decrease in the shunt resistance as is apparent from
In conclusion, the sequential deposition method for the fabrication of perovskite sensitized mesoscopic solar cells introduced here, provides a means to achieve a excellent photovoltaic performance with high reproducibility. The power conversion efficiency of 15% achieved with the best device is a new record for solution-processed photovoltaics and organic or hybrid inorganic/organic solar cells in general. Our findings enable completely new routes for the fabrication of perovskite-based photovoltaic devices as any preformed metal halide structure may be converted into the desired perovskite by this simple insertion reaction. A key finding of our investigation is that the rate of conversion is greatly enhanced by confining the metal halide within the nano-pores of the metal oxide host that acts as a scaffold. Solar cells that were fabricated using this procedure exhibit not only excellent performance but also show very promising long-term stability under prolonged test conditions, raising hope that this new class of mesoscopic solar cells will find wide spread applications.
| Number | Date | Country | Kind |
|---|---|---|---|
| 13166720.6 | May 2013 | EP | regional |
| 13382181.9 | May 2013 | EP | regional |
This application claims priority from International Application No. PCT/EP2014/059124 filed on May 5, 2014, which claims priority from European Application Nos. EP13166720.6, filed May 6, 2013 and EP13382181.9 filed May 16, 2013.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/EP2014/059124 | 11/5/2014 | WO | 00 |
