Ikeda, M. et al, Appl. Phys. Lett., 47:1027 (1985). |
Ishikawa, M. et al, Appl. Phys. Lett., 48:207 (1986). |
Kobayashi, K. et al, Electron. Lett., 21:931 (1985). |
Ishikawa, M. et al, Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices & Materials, Tokyo, 1986 (Komiyama, Japan 1986) pp. 153-156. |
Ikeda, M. et al, Apply. Phys. Lett., 50:1033 (1987). |
Tanaka, H. et al, J. Appl. Phys., 61:1713 (1987). |
Tsang, W. T., Appl. Phys. Lett., 39:134 (1981). |
Nagle, J. et al, Appl. Phys. Lett., 50:1325 (1986). |
Honda, M. et al, Jpn. J. Appl. Physics, 24:3, L187-189 (1985). |
Gomyo, A. et al, Appl. Phys. Lett., 50:673 (1987). |
Dutta, N. K., J. Appl. Phys., 54:1236 (1983). |
Tihanyi, P. et al, Appl. Phys. Lett., 50(23) Jun. 8 (1987). |
Horikoshi, Y. et al, appl. Phys. Lett., 50(23):1686-1687 (1987). |
NE Report, Japanese BiWeekly Magazine Report, Applied Physics Letters, vol. 51, No. 21, pp. 1658-1660, Nov. 23, 1987. |
Shealy, J. R., Appl. Phys. Lett., 52(18) May 2 (1988). |
Shealy, J. R., Appl. Phys. Lett., 50(23) Jun. 8 (1987). |
Bour, D. P. et al, Appl. Phys. Lett., 51(21) Nov. 23 (1987). |