High power-density, high back EMF permanent magnet machine and method of making same

Information

  • Patent Grant
  • 10946748
  • Patent Number
    10,946,748
  • Date Filed
    Thursday, April 20, 2017
    7 years ago
  • Date Issued
    Tuesday, March 16, 2021
    3 years ago
Abstract
An electric drive system includes a permanent magnet machine having a rotor and a stator and a power converter electrically coupled to the permanent magnet machine and configured to convert a DC link voltage to an AC output voltage to drive the permanent magnet machine. The power converter includes a plurality of silicon carbide switching devices having a voltage rating that exceeds a peak line-to-line back electromotive force of the permanent magnet machine at a maximum speed of the permanent magnet machine.
Description
BACKGROUND OF THE INVENTION

Embodiments of the invention relate generally to permanent magnet machines having high power-density and, more particularly, to a method and system for preventing fault conditions in a high power-density, high back electromotive force (emf) permanent magnet machines by providing power converters that include silicon carbide metal-oxide-semiconductor field effect transistors (MOSFETs).


The need for high power density and high efficiency electric machines (i.e., electric motors and generators) has long been prevalent for a variety of applications, particularly for hybrid and/or electric vehicle traction applications. Due to energy supply and environmental reasons, there has been increased motivation to produce hybrid-electric and/or electric vehicles that are both highly efficient and reliable, yet reasonably priced for the average consumer. However, the drive motor technology available for hybrid-electric and electric vehicles has generally been cost-prohibitive, thereby reducing one (or both) of consumer affordability or manufacturer profitability.


Most commercially available hybrid-electric and electric vehicles rely on internal permanent magnet (IPM) electric machines for traction applications, as IPM machines have been found to have high power density and high efficiency over a wide speed range, and are also easily packaged in front-wheel-drive vehicles. However, in order to obtain such high power density, IPM machines must use expensive sintered high energy-product magnets. Furthermore, IPM machines run at high speed (e.g., 14,000 rpm) to obtain optimum power density. The power density of a permanent magnet machine is defined as the ratio of the power output and the volume of the permanent magnet machine. A relatively high power density (e.g., high power output relative to volume) is typically desirable. The high power density allows the permanent magnet machine to have either a smaller overall size for a given power output or a higher output for a given size.


As the speed of the rotor of the permanent magnet machine increases, the voltage developed in the stator (referred to as the “back emf”) increases. This, in turn, requires that higher and higher terminal voltages be applied to produce the desired torque. The machine back emf is proportional to speed for a permanent magnet machine. If the peak line-to-line back emf at maximum speed is higher than the DC link voltage, and if control over the power converter is lost, the permanent magnet machine will start operating in an uncontrolled generation (UCG) mode. UCG occurs when the control gate signals to all of the six inverter switches are turned off, or disconnected. During this condition, the motor is connected to the DC source via the anti-parallel diodes of the inverter switches. The anti-parallel diodes create a potential path for current to flow, which is dependent upon the motor operating condition and DC source voltage. In this case, the permanent magnet machine will act as a generator converting rotational power into electric currents and will start dumping energy into the DC link through the anti-parallel diodes in the power converter, causing an increase in the DC link voltage. If this energy is not dissipated, or if the build-up of the DC link voltage is not limited, the voltage rating of the active devices in the power converter may be exceeded by the DC link voltage.


In order to minimize or prevent occurrences of the UCG mode of operation, a limit is typically set on the machine back emf or an additional clamping or crowbar circuit is added in parallel to the DC link. However, limiting the machine back emf reduces the power or torque density and speed capacity of the machine. Further, adding a crowbar circuit adds additional cost and complexity to the circuitry of the permanent magnet machine drive system. The back emf of a machine can also be reduced by limiting the amount or relative strength of the magnets in the machine, which also negatively impacts the power or torque density.


It would therefore be desirable to eliminate setting a machine back emf limit and/or to eliminate adding a crowbar circuit such that device voltage ratings are not exceeded during a UCG mode of operation.


BRIEF DESCRIPTION OF THE INVENTION

In accordance with one aspect of the invention, an electric drive system includes a permanent magnet machine having a rotor and a stator and a power converter electrically coupled to the permanent magnet machine and configured to convert a DC link voltage to an AC output voltage to drive the permanent magnet machine. The power converter includes a plurality of SiC switching devices having a voltage rating that exceeds a peak line-to-line back emf of the permanent magnet machine at a maximum speed of the permanent magnet machine.


In accordance with another aspect of the invention, a method of manufacturing an electric drive system includes the step of providing a SiC power converter that has a plurality of SiC switching devices and is coupleable to a power source. The method also includes the steps of providing a permanent magnet machine having a peak line-to-line back emf at maximum speed that is greater than a DC link voltage of the power source and coupling the SiC power converter to the permanent magnet machine to drive the permanent magnet machine.


In accordance with another aspect of the invention, a vehicle drive system includes a motor that has a permanent magnet rotor and a stator. The drive system also includes a DC link and a power converter electrically coupled between the DC link and the permanent magnet motor to drive the permanent magnet motor. The power converter comprises a plurality of SiC switching devices rated for a higher operating voltage than a maximum back emf capable of being developed in the stator of the permanent magnet motor.


Various other features and advantages will be made apparent from the following detailed description and the drawings.





BRIEF DESCRIPTION OF THE DRAWINGS

The drawings illustrate embodiments presently contemplated for carrying out the invention.


In the drawings:



FIG. 1 illustrates a conventional permanent magnet machine drive system.



FIG. 2 illustrates a high-power density permanent magnet machine drive system, according to an embodiment of the invention.





DETAILED DESCRIPTION


FIG. 1 illustrates a conventional three-phase permanent magnet machine drive system 10. System 10 includes a DC link 12 that provides a DC input voltage that is converted or inverted to an AC waveform that powers a permanent magnet machine 14. An input filter capacitor 16 is coupled across the DC link 12 for filtering the voltage VDC on the DC link 12. A power converter 18 receives the input voltage from DC link 12 when power flows from the DC link 12 to the AC permanent magnet machine 14. This direction of power flow is often referred to operating in a “motoring” mode. When the direction of power flow is from the permanent magnet machine 14 to the power converter 18, the input voltage to the power converter 18 is AC from the permanent magnet machine 14, while the output from the power converter 18 is a DC voltage on the DC link 12. Operation with power flow from the AC permanent magnet machine 14 to the power converter 18 is often referred to operation in a regenerative braking mode that is useful, for example, in a vehicle where it is desirable to hold a given value of speed on a downhill grade, or while decelerating the vehicle.


Power converter 18 is a typical 3-phase inverter having two series-connected switching devices per phase leg. For example, devices 20 and 22 form a first phase leg, devices 24 and 26 form a second phase leg, and devices 28 and 30 form a third phase leg. Devices 20-30 are conventional silicon semiconductor switching devices such as, for example, silicon IGBT, MOSFET, silicon bi-polar Darlington power transistor, GTO, SCR, or IGCT type devices.


Diodes 32, 34, 36, 38, 40, 42 are coupled in anti-parallel relationship across respective silicon switching devices 20-30.



FIG. 2 illustrates a permanent magnet machine drive system 44 in accordance with an embodiment of the invention. Drive system 44 includes a DC link 46 having a DC source voltage VS 48. Drive system 44 includes a power source 50 that provides DC source voltage VS 48. Drive system 44 includes preferably two contactors (C1, C2) 52, 54, or at least one contactor C1 to couple or disconnect DC link 46 from power source 50. In one embodiment, power source 50 includes an AC source 58 and a rectifier 56 configured to convert a voltage of AC source 58 to the DC link or source voltage Vs. In another embodiment, power source 50 includes a DC power source 58, such as a battery, a fuel cell, or a flywheel with associated power electronic converter. In yet another embodiment, power source 50 includes a DC power source 58, such as a battery, a fuel cell, an ultracapacitor, or a flywheel with an associated power electronic control coupled to a bi-directional DC-to-DC voltage converter 56 that boosts the source voltage to the DC link or source voltage Vs. DC link 46 supplies a DC output voltage VDC 60 to a power converter or inverter 62. An input filter capacitor 64 is illustrated between a positive DC rail 66 and a negative DC rail 68 and serves to provide a filter function for the high frequency currents from source 50 to ensure the power quality between positive and negative rails 66, 68.


Power converter 62 receives DC input voltage VDC 60 from DC link 46 and converts the DC input voltage to provide a suitable form of AC power for driving a permanent magnet machine 70, described in detail below. A controller 72 is also included in drive system 44 and includes means to open and close contactors C1 and C252, 54 based on sensed voltage inputs from Vs 48, VDC 60, speed sensor inputs from machine 70, plus operator inputs as well as detected faults that may occur in power converter 62. Controller 72 also includes means to control the boost power command to the bi-directional boost converter 56.


According to one embodiment, power converter 62 is a three-phase DC to AC inverter having a plurality of switching devices 74, 76, 78, 80, 82, 84. Each switching device 74-84 includes a silicon carbide (SiC) MOSFETs 86, 88, 90, 92, 94, 96 and an associated anti-parallel diode 98, 100, 102, 104, 106, 108.


SiC is a crystalline substance that has material properties that make it an attractive alternative to silicon for high voltage, and high power applications. For example, SiC has a large bandgap that provides a very low leakage current, which facilitates elevated temperature operation. In fact, semiconductor devices manufactured on a SiC substrate can withstand temperatures in excess of 200 degrees C. SiC also has a high breakdown field that is about ten times that of silicon and a thermal conductivity that is about three times that of silicon, allowing higher power densities to be accommodated with SiC circuits. Further, SiC's high electron mobility enables high-speed switching. Thus, SiC has been considered as an advantageous material for use in the manufacture of next generation power semiconductor devices. Such devices include, for example, Schottky diodes, thyristors, and MOSFETs.


Moving from left to right in FIG. 2, switching devices 74, 76 are associated with a first output phase 110, switching devices 78, 80 are associated with a second output phase 112, and switching devices 82, 84 are associated with a third output phase 114. While a three-phase power converter and three-phase permanent magnet machine 70 are illustrated in FIG. 2, one skilled in the art will understand that embodiments of the present invention are equally applicable to a single-phase or other multi-phase embodiments. For example, alternate embodiments include configurations with varying number of phases, e.g., n-phase, where n=1, 2, 4, 5, 7, or higher number, where each phase of the power converter includes a plurality of switching devices similar to devices 86, 88, each with associated anti-parallel diodes similar to diodes 98, 100.


Power converter 62 drives a permanent magnet machine 70. In one embodiment, permanent magnet machine 70 is a traction motor that includes a permanent magnet rotor 116 and a stator 118, such as, for example, a traction motor for powering an electric vehicle. Permanent magnet rotor permanent magnet rotor 116, may be configured as a surface mount, interior, or buried permanent magnet rotor, according to various embodiments. In an alternate embodiment, permanent magnet machine 70 is an alternator that includes a permanent magnet rotor 116 and a stator 118, such as, for example, a permanent magnet alternator coupled to a heat engine within an Auxiliary Power Unit (APU) for generating electrical power to aid in the operation of a hybrid-electric vehicle (HEV) or a Plug-in Hybrid-Electric Vehicle (PHEV).


The high voltage rating of SiC MOSFETs 86-96 allows permanent magnet machine 70 to be designed with a high back emf without having to worry about the uncontrolled generation mode, thereby significantly increasing the power density of permanent magnet machine 70. That is, SiC MOSFETs 86-96 have a voltage rating that exceeds the DC link voltage during an uncontrolled generation mode of permanent magnet machine 70. Conventional Si IGBT power modules used power converter circuits in commercially available on-road EV, HEV, and PHEV typically have a voltage rating of approximately 600 V or 1,200 V for some larger or high performance vehicles, including SUV's, trucks, and buses. According to one embodiment, SiC MOSFETs 86-96 are high voltage SiC MOSFETs manufactured by General Electric Company having a voltage rating of approximately three to four kV. The combined high voltage SiC power converter 62 combined with high power density multi-phase permanent magnet machine 70, allows upwards of two-to-four times power density with a substantial improvement in fault tolerance during periods of loss of control over the power converter 62 or loss of gate drive to the power modules within the power converter 62. Because SiC MOSFETs 86-96 can be manufactured to be physically smaller than conventional silicon MOSFETs, SiC MOSFETs 86-96 can be packaged in an automotive environment and can be operated at higher temperatures.


Excessive emf voltage of permanent magnet machine 70 may damage DC power source 58 of power source 50. Accordingly, in one embodiment, controller 72 is configured to detect a fault in power converter 62 and the associated gate drive circuitry of power converter 62. For example, a fault may be detected if the line-to-line back emf is within a threshold percentage of the voltage rating of DC power source 58. If a fault is detected, controller 72 may be programmed to disconnect or decouple DC power source 58 from power converter 62. Accordingly, excessive emf voltage created by permanent magnet machine 70 during a fault condition within power converter 62 will not result in overvoltage damage to DC power source 58. The high voltage rating of SiC power converter 62 and its associated components 86-96 will withstand the back emf from the high-power permanent magnet machine 70, even if a potential fault occurs while machine 70 is operating at high speed.


Therefore, according to one embodiment of the invention, an electric drive system includes a permanent magnet machine having a rotor and a stator and a power converter electrically coupled to the permanent magnet machine and configured to convert a DC link voltage to an AC output voltage to drive the permanent magnet machine. The power converter includes a plurality of SiC switching devices having a voltage rating that exceeds a peak line-to-line back emf of the permanent magnet machine at a maximum speed of the permanent magnet machine.


According to another embodiment of the invention, a method of manufacturing an electric drive system includes the step of providing a SiC power converter that has a plurality of SiC switching devices and is coupleable to a power source. The method also includes the steps of providing a permanent magnet machine having a peak line-to-line back emf at maximum speed that is greater than a DC link voltage of the power source and coupling the SiC power converter to the permanent magnet machine to drive the permanent magnet machine.


According to yet another embodiment of the invention, a vehicle drive system includes a motor that has a permanent magnet rotor and a stator. The drive system also includes a DC link and a power converter electrically coupled between the DC link and the permanent magnet motor to drive the permanent magnet motor. The power converter comprises a plurality of SiC switching devices rated for a higher operating voltage than a maximum back emf capable of being developed in the stator of the permanent magnet motor.


This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the invention is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal languages of the claims.

Claims
  • 1. An electric drive system comprising: an electric machine comprising a rotor and a stator;a power converter electrically coupled to the electric machine and configured to convert a DC link voltage to an AC output voltage to drive the electric machine, the power converter comprising: a plurality of silicon carbide (SiC) switching devices, wherein a three-terminal controlled device of each switching device has voltage rating that exceeds a peak line-to-line back electromotive force (emf) of the electric machine during an uncontrollable generation mode of the electric machine when a control gate signal on each of the switching devices is turned off;a power source coupleable to the power converter, the power source comprising a DC power source coupled to a bi-directional DC-DC converter; andat least one contactor coupled between the power converter and the bi-directional DC-DC converter, the contactor configured to decouple the power source and bi-directional DC-DC converter from the power converter during the uncontrollable generation mode.
  • 2. The electric drive system of claim 1 wherein the switching devices each comprise a SiC metal-oxide-semiconductor field effect transistor (MOSFET).
  • 3. The electric drive system of claim 1 wherein a maximum DC link voltage of the electric drive system is less than the voltage rating of each switching device.
  • 4. The electric drive system of claim 3 wherein the switching devices each have a voltage rating greater than approximately three kV.
  • 5. The electric drive system of claim 1 wherein the electric machine comprises a multi-phase permanent magnet traction motor.
  • 6. The electric drive system of claim 1 wherein the electric machine comprises a single-phase permanent magnet traction motor.
  • 7. The electric drive system of claim 1 wherein the electric machine comprises a multi-phase permanent magnet alternator, the alternator being coupled to a heat engine.
  • 8. The electric drive system of claim 1 wherein the power converter further comprises a plurality of diodes, each diode connected in an anti-parallel arrangement with a respective switching device.
  • 9. The electric drive system of claim 1 wherein the power converter is a three-phase power converter.
  • 10. A vehicle drive system comprising: an electric machine comprising: a rotor; anda stator;a DC link;a power converter electrically coupled between the DC link and the electric motor to drive the electric motor;a power source coupleable to the power converter, the power source comprising a DC power source coupled to a bi-directional DC-DC converter; andat least one contactor coupled between the power converter and the bi-directional DC-DC converter;wherein the power converter comprises a plurality of silicon carbide (SiC) three-terminal controlled switching devices, wherein a three-terminal controlled device of each switching device has a voltage rating that exceeds a peak line-to-line back electromotive force (emf) of the motor based on a fault condition when the line-to-line back emf is within a threshold percentage of a voltage rating of the DC power source;wherein the contactor is configured to decouple the power source and bi-directional DC-DC converter from the power converter during the fault condition.
  • 11. The vehicle drive system of claim 10 wherein the switching devices each comprise a SiC metal-oxide-semiconductor field effect transistor (MOSFET).
  • 12. The vehicle drive system of claim 10 wherein the plurality of switching devices each have a voltage rating of at least three kV.
  • 13. The vehicle drive system of claim 10 wherein the power converter comprises a three-phase power converter.
  • 14. The vehicle drive system of claim 10 further comprising a controller electrically coupled to the power converter, the controller configured to detect the fault condition.
  • 15. The vehicle drive system of claim 14 wherein the controller is further coupled to the contactor, the contactor configured to decouple the power source from the power converter upon receiving a fault signal from the controller.
  • 16. The vehicle drive system of claim 10 wherein the electric machine comprises a multi-phase traction motor.
  • 17. The vehicle drive system of claim 10 wherein the electric machine comprises a multi-phase permanent magnet alternator, the alternator being coupled to a heat engine.
  • 18. An electric drive system comprising: an electric machine comprising a rotor and a stator; anda power converter electrically coupled to the electric machine and configured to convert a DC link voltage to an AC output voltage to drive the electric machine, the power converter comprising: a plurality of silicon carbide (SiC) switching devices, wherein a three-terminal controlled device of each switching device has a voltage rating that exceeds a peak line-to-line back electromotive force (emf) of the electric machine during an uncontrollable generation mode;a power source coupleable to the power converter, the power source comprising a DC power source coupled to a DC-DC converter; andat least one switching device coupled between the power converter and the DC-DC converter, the switching device configured to decouple the power source and DC-DC converter from the power converter during the uncontrollable generation mode in response to a control signal.
  • 19. The electric drive system of claim 18 wherein a maximum DC link voltage of the electric drive system is less than the voltage rating of each switching device.
  • 20. The electric drive system of claim 18 further comprising a controller electrically coupled to the power converter and the DC-DC converter, the controller configured to detect the uncontrollable generation mode.
  • 21. The electric drive system of claim 20 wherein the controller is further coupled to the switching device between the power converter and DC-DC converter, the switching device configured to decouple the power source from the power converter upon receiving a signal from the controller.
CROSS-REFERENCE TO RELATED APPLICATION

The present application is a continuation of, and claims priority to, U.S. patent application Ser. No. 12/949,925, filed Nov. 19, 2010, the disclosure of which is incorporated herein by reference.

US Referenced Citations (100)
Number Name Date Kind
4667123 Denk May 1987 A
5041896 Temple et al. Aug 1991 A
5385855 Brown Jan 1995 A
5510281 Ghezzo et al. Apr 1996 A
5510632 Brown et al. Apr 1996 A
5514604 Brown May 1996 A
5543703 Kusase Aug 1996 A
5672889 Brown Sep 1997 A
5719484 Taniguchi Feb 1998 A
5726463 Brown Mar 1998 A
5731689 Sato Mar 1998 A
5757151 Donegan May 1998 A
5814859 Ghezzo et al. Sep 1998 A
5963791 Brown Oct 1999 A
6022196 Jensen et al. Feb 2000 A
6157049 Mitlehner et al. Dec 2000 A
6198183 Baeumel et al. Mar 2001 B1
6239582 Buzan et al. May 2001 B1
6364004 Ehrmann et al. Apr 2002 B1
6498451 Boules et al. Dec 2002 B1
6690592 Link Feb 2004 B2
6795322 Aihara Sep 2004 B2
6843335 Shirakawa et al. Jan 2005 B2
6946760 Crapo Sep 2005 B2
6989592 Chang Jan 2006 B2
6997687 Iritani Feb 2006 B2
7009318 Iritani et al. Mar 2006 B2
7038260 Yu May 2006 B1
7082020 Friedrichs et al. Jul 2006 B2
7193378 Welchko Mar 2007 B1
7206178 Friedrichs et al. Apr 2007 B2
7210304 Nagashima et al. May 2007 B2
7218021 Nilson May 2007 B2
7327053 Eckardt et al. Feb 2008 B2
7351637 Tucker Apr 2008 B2
7414339 Kitamura Aug 2008 B2
7468565 Hoshiba Dec 2008 B2
7517807 Tucker et al. Apr 2009 B1
7521732 Matocha et al. Apr 2009 B2
7554220 Sugawara Jun 2009 B2
7652858 Tang Jan 2010 B2
7679941 Raju Mar 2010 B2
7690456 Deng Apr 2010 B2
7777553 Friedrichs Aug 2010 B2
7787270 NadimpalliRaju Aug 2010 B2
8027181 Hamatani Sep 2011 B2
8074753 Tahara et al. Dec 2011 B2
8083557 Sullivan Dec 2011 B2
8102687 Takasu Jan 2012 B2
8148859 Yoshida et al. Apr 2012 B2
8193756 Jadric et al. Jun 2012 B2
8281886 Saha et al. Oct 2012 B2
8297389 Takizawa Oct 2012 B2
8351224 Ohashi Jan 2013 B2
8363440 Tagome Jan 2013 B2
8405341 Tagome Mar 2013 B2
8610130 Ryu et al. Dec 2013 B2
9685900 El-Refaie et al. Jun 2017 B2
20030029654 Shimane Feb 2003 A1
20040119292 Datta et al. Jun 2004 A1
20050127396 Mitra et al. Jun 2005 A1
20050231152 Welchko Oct 2005 A1
20050269981 Sakurai Dec 2005 A1
20060047358 Liang et al. Mar 2006 A1
20060086981 Yamaguchi et al. Apr 2006 A1
20060152085 Flett et al. Jul 2006 A1
20060267021 Rowland et al. Nov 2006 A1
20070015373 Cowen et al. Jan 2007 A1
20070720208 Mitra May 2007
20070126007 Matocha Jun 2007 A1
20070151272 Cosan et al. Jul 2007 A1
20070224784 Soloviev et al. Sep 2007 A1
20070238253 Tucker Oct 2007 A1
20070257633 Won Nov 2007 A1
20080014693 Matocha Jan 2008 A1
20080018289 Tajima et al. Jan 2008 A1
20080038890 Tucker Feb 2008 A1
20080050876 Matocha et al. Feb 2008 A1
20080108190 Matocha May 2008 A1
20080132047 Dunne et al. Jun 2008 A1
20080142811 Matocha et al. Jun 2008 A1
20080143183 Hoshiba Jun 2008 A1
20080146004 Matocha et al. Jun 2008 A1
20080238520 de Rooij et al. Oct 2008 A1
20090084472 Gigliotti, Jr. et al. Apr 2009 A1
20090117722 Tucker et al. May 2009 A1
20090159896 Arthur et al. Jun 2009 A1
20090194772 Stum et al. Aug 2009 A1
20090242292 Heller Oct 2009 A1
20090251088 Fukuda Oct 2009 A1
20090279337 Hamatani Nov 2009 A1
20090289583 Yoshida Nov 2009 A1
20090322165 Rittenhouse Dec 2009 A1
20100050676 Takamatsu et al. Mar 2010 A1
20100090227 Lou et al. Apr 2010 A1
20100093116 Fronheiser et al. Apr 2010 A1
20100200931 Matocha et al. Aug 2010 A1
20110309777 Welchko et al. Dec 2011 A1
20120119573 Turudic May 2012 A1
20120126728 El-Refaie et al. May 2012 A1
Foreign Referenced Citations (47)
Number Date Country
1115130 Jan 1996 CN
1771649 May 2006 CN
101197546 Jun 2008 CN
101330251 Dec 2008 CN
101331673 Dec 2008 CN
101496261 Jul 2009 CN
102005032971 Jan 2007 DE
0404233 Dec 1990 EP
0751601 Jan 1997 EP
1947756 Jul 2008 EP
2149469 Feb 2010 EP
2301949 Dec 1996 GB
2463483 Mar 2010 GB
02106159 Apr 1990 JP
06284504 Oct 1994 JP
07184361 Jul 1995 JP
07337020 Dec 1995 JP
11206183 Jul 1999 JP
H11-178353 Jul 1999 JP
11307352 Nov 1999 JP
2001309683 Nov 2001 JP
2004289935 Oct 2004 JP
2005-045927 Feb 2005 JP
2005160284 Jun 2005 JP
2005199986 Jul 2005 JP
2006042529 Feb 2006 JP
2006121877 May 2006 JP
2006180675 Jul 2006 JP
06284504 Aug 2006 JP
2006217743 Aug 2006 JP
2006320134 Nov 2006 JP
2007116840 May 2007 JP
2007166900 Jun 2007 JP
2007-236080 Sep 2007 JP
2008017682 Jan 2008 JP
200829115 Feb 2008 JP
2008029115 Feb 2008 JP
2008061414 Mar 2008 JP
4082060 Apr 2008 JP
2008189249 Aug 2008 JP
2009050059 Mar 2009 JP
2010068641 Mar 2010 JP
2010074869 Apr 2010 JP
2010130837 Jun 2010 JP
2010239823 Oct 2010 JP
200817682 Jan 2017 JP
2010122404 Oct 2010 WO
Non-Patent Literature Citations (49)
Entry
U.S. Appl. No. 12/949,882, filed Nov. 19, 2010, Ayman Mohamed Fawzi EL-Refaie et al.
U.S. Appl. No. 12/949,862, filed Nov. 19, 2010, Ayman Mohamed Fawzi EL-Refaie et al.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011250219 dated Dec. 10, 2015.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011250220 dated Dec. 15, 2015.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011250219 dated Jan. 5, 2016.
Unofficial English Translation of Chinese Search Report issued in connection with Related CN Application No. 201110385851.9 dated Jul. 26, 2016.
European Office Action issued in connection with Related EP Application No. 11189253.5 dated Aug. 19, 2016.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011250220 dated Nov. 22, 2016.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011250219 dated Dec. 13, 2016.
EL-Refaie et al, “Comparison of Synchronous PM Machine Types for Wide Constant-Power Speed Range Operation”, Conference Record—IAS Annual Meeting (IEEE Industry Applications Society), pp. 1015-1022, 2005.
Horrdin et al., “Technology Shifts in Power Electronics and Electric Motors for Hybrid Electric Vehicles”, Master of Science Thesis, Chalmers University of Technology, Goteborg, Sweden, pp. 1-69, 2007.
Shah, “Designing Small Efficient AC/DC Switching Power Supplies”, EDN Network, vol. No. 56, pp. 53-56, Sep. 27, 2007.
Zhang et al., “SiC's Potential Impact on the Design of Wind Generation System”, In Proceedings IEEE Ind. Electron. Conf, pp. 2231-2235, 2008.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011248140 dated Dec. 22, 2015.
Unofficial English Translation of Japanese Office Action issued in connection with Related JP Application No. 2011248140 dated Aug. 2, 2016.
Chinese Office Action issued in connection with corresponding CN Application No. 201110457014.6 dated Jan. 7, 2015.
Japanese Office Action issued in connection with corresponding JP Application No. 2011248140 dated Aug. 2, 2016.
Unofficial English Translation of Japanese Search Report issued in connection with Related JP Application No. 2011248140 dated Dec. 16, 2015.
Japanese Office Action issued in connection with corresponding JP Application No. 2011248140 dated Dec. 22, 2015.
EP Search Report and Opinion dated May 3, 2012 from corresponding EP Application No. 11189127.1.
Chinese Search Report issued in connection with CN Application No. 201110385885.8, dated Dec. 5, 2014.
Matocha, “Challenges in SiC Power MOSFET Design,” ISDRS 2007, Dec. 12-14, 2007, College Park, MD, pp. 1-2, http://www.ec.e.umd.edu/ISDRS.
Matocha et al., “Getting the Most from SiC MOSFETs: Optimizing Conduction and Switching Losses for High Performance Power Electronics Applications,” ISDRS 2009, Dec. 9-11, 2009, College Park, MD, pp. 1-2, http://www.ece.umd.edu/ISDRS2009.
Stevanovic et al. “Recent Advances in Silicon Carbide MOSFET Power Devices,” Applied Power Elect. Conference 2010, pp. 401-407.
Matocha et al., “1400 Volt, 5 milli-ohms-cm2 SiC MOSFETs for High-Speed Switching,” Proceedings of The 22nd International Symposium on Power Semiconductor Devices & ICs, Hiroshima, pp. 365-368.
Matocha et al., “Performance and Reliability of SiC MOSFETs for High-Current Power Modules,” ICSCRM 2009, pp. 1-4.
Stum et al., “4kV Silicon Carbide MOSFETs,” The 8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, Aug. 29-Sep. 2, 2010, pp. 1-4.
Gurfinkel et al., “Time-Dependent Dielectric Breakdown of 4H-SiC/Si02 MOS Capacitors,” IEEE Transactions on Device and Materials Reliability, vol. 8, No. 4, Dec. 2008, pp. 635-641.
Stum et al., “300°C Silicon Carbide Integrated Circuits,” The 8th European Conference on Silicon Carbide and Related Materials, Oslo, Norway, Aug. 29-Sep. 2, 2010, pp. 1-4.
Tilak et al., “Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers,” IEEE Transactions on Electron Devices, vol. 54, No. 11, Nov. 2007, pp. 2823-2829.
Losee et al., “DC and Transient Performance of 4H-SiC Double-Implant MOSFETs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1824-1829.
Matocha et al., “Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1830-1834.
Matocha, “Challenges in Sic Power MOSFET Design,” Solid-State Electronics, vol. 52, 2008, pp. 1631-1635, journal homepage: www.elsevier.com/locate/sse.
Elasser et al., “3kV 4H-SiC Thyristors for Pulsed Power Applications,” Abstract, Materials Science Forum, vols. 545-648,2010, pp. 1053-1056.
Losee et al., “100 Amp, 1000 Volt Class 4H—Silicon Carbide MOSFET Modules,” Abstract, Materials Science Forum, vols. 615-617, 2009, pp. 899-903.
Matocha et al., “Understanding the inversion-layer properties of the 4H-SiC/Si02 interface,” The 8th European conference on Silicon Carbide and Related Materials, Oslo, Norway, Aug. 29-Sep. 2, 2010, pp. 1-8.
EP Search Report and Opinion dated Apr. 26, 2012 from corresponding EP Application No. 11189255.0.
EP Search Report and Opinion dated Aug. 21, 2012 from corresponding EP Application No. 11189253.5.
U.S. Final Office Action issued in connection with Related U.S. Appl. No. 12/949,925 dated Oct. 24, 2016.
English Translation of Search Report for corresponding JP 2011-250219, dated Dec. 10, 2015.
Chinese Search Report issued in connection with corresponding CN Application No. 201110385885.8, dated Dec. 5, 2014.
Machine translation and Notification of Reasons for Refusal issued in connection with corresponding JP Application No. 2011-248140 dated Oct. 31, 2017.
Non Final Rejection towards U.S. Appl. No. 15/600,086 dated Dec. 1, 2017.
Examination Report for corresponding Indian Application No. 2708/DEL/2011 dated Aug. 10, 2018.
Office Action for corresponding Japanese Application No. 2011-250219 dated Mar. 13, 2018.
Honggang Sheng et al., Investigation of 1.2kV SiC MOSFET for High Frequency High Power Applications, Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, (IEEE, Mar. 18, 2010), p. 1572-1577.
Gangyao Wang et al., Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer Application, Energy Conversion Congress and Exposition (ECCE), 2010 IEEE, (IEEE, Nov. 1, 2010), p. 100-104.
European Communication issued in connection with related EP Application No. 11189253.5, dated Nov. 11, 2018.
First Office Action for corresponding Chinese Application No. 201810153887.6 dated Oct. 15, 2020.
Related Publications (1)
Number Date Country
20170217320 A1 Aug 2017 US
Continuations (1)
Number Date Country
Parent 12949925 Nov 2010 US
Child 15492544 US