High power faraday isolators and rotators using potassium terbium fluoride crystals

Information

  • Patent Grant
  • 10718963
  • Patent Number
    10,718,963
  • Date Filed
    Thursday, November 16, 2017
    6 years ago
  • Date Issued
    Tuesday, July 21, 2020
    3 years ago
Abstract
A high power Faraday isolator or rotator includes, at least one Faraday optical element, and a magnetic structure capable of generating a magnetic field within the at least one Faraday optical element. The at least one Faraday optical element comprises a Potassium Terbium Fluoride (KTF) crystal grown or manufactured along the [113] crystal orientation and which is oriented such that the light propagating through the Faraday isolator is within 2 degrees of the [113] crystal orientation.
Description
FIELD OF THE INVENTION

The present invention relates to high power Faraday isolators and rotators, and, more particularly, to isolators and rotators with Potassium Terbium Fluoride crystals.


BACKGROUND OF THE INVENTION

It is known to use Potassium Terbium Fluoride crystals grown along the [111] or crystal orientations in Faraday rotators and isolators in laser applications exceeding 100 W.


SUMMARY OF THE INVENTION

The present invention provides a high power Faraday isolator or rotator. The isolator or rotator includes at least one Faraday optical element and a magnetic structure capable of generating a magnetic field within the Faraday optical element. The Faraday optical element includes a Potassium Terbium Fluoride (KTF) crystal, a face centered cubic crystal, grown or manufactured along the [113] crystal orientation and which is oriented such that the light propagating through the Faraday isolator is within 2 degrees of the [113] crystal orientation. The Faraday optical element may consist of a single rod or a plurality of thin discs. Each disc may rotate light a proportionate amount such that after passing through each disc the light is rotated a total of 45 degrees. The crystal may not exhibit thermal birefringence or radial stress birefringence. The crystal may be insensitive to radial mounting stresses or insensitive to radial growth and fabrication stresses.


In another aspect of the invention, a method for growing or manufacturing a crystal for a high power Faraday isolator or rotator is provided. The method includes growing a KTF crystal along the [113] crystal orientation.


These and other objects, advantages, purposes and features of the present invention will become apparent upon review of the following specification in conjunction with the drawings.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 shows a crystal with a face in a [113] orientation;



FIG. 2 is a schematic of a Faraday rotator with a KTF crystal having a face in the orientation, in accordance with the present invention; and



FIG. 3 is a schematic of another Faraday rotator with multiple KTF crystals having a face in the [113] orientation, in accordance with the present invention.





DESCRIPTION OF THE INVENTION

Optical isolators are routinely used to decouple a laser oscillator from downstream laser amplifier noise radiation and/or target reflections. Optical isolators are typically comprised of a Faraday rotator surrounded by polarizers that are aligned with the input and output linear polarization states. A Faraday rotator is typically comprised of a non-reciprocal, optical element in a strong magnetic field that is co-axially aligned with the laser radiation so that the plane of polarization is rotated by 45 degrees. In an optical isolator, the non-reciprocal nature of the Faraday effect causes the plane of linear polarization in the backward propagating direction to be rotated an additional 45 degrees resulting in a polarization state which is 90 degrees to the transmission axis of the input polarizer. This results in reverse propagating radiation to experience high transmission losses while allowing forward propagating radiation to experience low transmission losses.


Potassium Terbium Fluoride (KTF) crystals grown along the [111] or [100] crystal orientations (Miller indices, or a family of lattice planes determined by three integers) have been shown to be acceptable choices for use in Faraday rotators and isolators in laser applications exceeding 100 W. Unfortunately, these crystals still exhibit thermal birefringence and radial stress birefringence. Thermal birefringence reduces the crystals extinction as a function of laser power and limits the performance of single stage Faraday isolators to 30 dB at powers greater than 200 W. Further, KTF crystals grown along these orientations are sensitive to radially oriented mounting stresses which can limit their usefulness. Finally, KTF crystals grown along the [111] and [100] directions can be sensitive to radial growth and fabrication stresses which can limit part yield—particularly for large diameter boules (single crystal ingots produced by synthetic means) or clear aperture parts.


The present invention relates to the growth or manufacturing of KTF crystals along a [113] crystal orientation. FIG. 1 provides an example of a crystal in the [113] orientation, perpendicular to the (113) plane (among others). This highly atypical alignment of the crystal growth direction is based on the evaluation of KTF's negative stress-optic anisotropy ratio in the near infrared region and yields crystals that do not exhibit thermal birefringence or radial stress birefringence or, at most, exhibit minimal thermal birefringence or radial stress birefringence. In addition, KTF crystals grown or manufactured along the [113] crystal orientation are substantially insensitive or minimally sensitive to radial mounting stresses as well as radial growth and fabrication stresses increasing their usefulness and cost in practical devices—particularly of very large aperture. As shown in FIG. 2, a high power Faraday isolator or rotator 10 includes input polarizer 12, where light initially enters. The polarized light that exits the input polarizer enters a [113] KTF crystal 14. The polarized light that exits the input polarizer enters a [113] KTF crystal 14 well aligned (e.g. within 2 degrees) along the [113] orientation or axis. The crystal 14 is housed within magnet assembly 16 and the light is rotated (with the degree of rotation determined or established by selecting an appropriate length of the crystal or selecting an appropriate magnetic field strength), such that light exiting the crystal is rotated 45 degrees. The light then passes through output polarizer 18 to polarize the light exiting the isolator or rotator.


In another aspect of the invention, instead of a single [113] KTF crystal piece or rod, as shown in FIG. 2, the [113] KTF crystal may instead comprise of a series of thin discs, aligned along the [113] axis, as shown in FIG. 3. As light passes through each disc, the light will be rotated (by an amount determined by the length of the respective disc and magnetic field strength) such that light exiting the series of thin disks is rotated 45 degrees. For example, if the total desired rotation is 45 degrees and there are six KTF crystal discs, each disc will rotate the light 45/6 degrees, or 7.5 degrees. It is understood that this is a mere example, and any number of discs can be used to achieve any desired rotation angle. Thus, as shown in FIG. 3, a Faraday isolator or rotator 110 includes input polarizer 112. Light enters through input polarizer 112 and then the polarized light enters a series of [113] KTF discs 114, housed within the magnet assembly 116. The rotated light then enters output polarizer 118 and polarized light exits the isolator. The use of thin discs of [113] KTF crystal provides the advantage of spreading the heat generated by KTF absorption over a larger area, thereby simplifying heat management within the assembly.


The crystal of the present invention is suitable for use in various Faraday isolator or rotator devices, such as high power Faraday isolator or rotator devices or the like. The crystal may be implemented in various devices such as by utilizing aspects of the devices and systems described in U.S. Publication Nos. US-2015-0124318; US-2014-0218795 and/or US-2014-0139911, and/or U.S. Pat. Nos. 9,268,159; 8,547,636 and/or 7,426,325, which are hereby incorporated herein by reference in their entireties.


Changes and modifications in the specifically described embodiments can be carried out without departing from the principles of the invention, which is intended to be limited only by the scope of the appended claims, as interpreted according to the principles of patent law including the doctrine of equivalents.

Claims
  • 1. A high power Faraday isolator or rotator comprising: at least one Faraday optical element;a magnetic structure capable of generating a magnetic field within said at least one Faraday optical element; andwherein said at least one Faraday optical element comprises a Potassium Terbium Fluoride (KTF) crystal grown or manufactured along the [113] crystal orientation and oriented such that light propagating through the high power Faraday isolator or rotator is within 2 degrees of the [113] crystal orientation.
  • 2. The isolator or rotator of claim 1, wherein the at least one Faraday optical element comprises a single Faraday optical element.
  • 3. The isolator or rotator of claim 1, wherein the at least one Faraday optical element comprises a plurality of Faraday optical elements.
  • 4. The isolator or rotator of claim 3, wherein the plurality of Faraday optical elements comprises a plurality of discs.
  • 5. The isolator or rotator of claim 4, wherein the plurality of Faraday optical elements comprises six discs.
  • 6. The isolator or rotator of claim 5, wherein each disc rotates light 7.5 degrees for a total of 45 degrees of rotation after light passes through all six discs.
  • 7. The isolator or rotator of claim 1, wherein said KTF crystal does not exhibit thermal birefringence.
  • 8. The isolator or rotator of claim 1, wherein said KTF crystal does not exhibit radial stress birefringence.
  • 9. The isolator or rotator of claim 1, wherein said KTF crystal is insensitive to radial mounting stresses.
  • 10. The isolator or rotator of claim 1, wherein said KTF crystal is insensitive to radial growth and fabrication stresses.
  • 11. A method for growing or manufacturing a crystal for a high power Faraday isolator or rotator, said method comprising: Growing or manufacturing a Potassium Terbium Fluoride (KTF) crystal along the [113] crystal orientation.
  • 12. The method of claim 11, comprising creating a Faraday optical element from the grown or manufactured KTF crystal.
  • 13. The method of claim 12, wherein the Faraday optical element comprises a rod of [113] KTF crystal created from the grown or manufactured KTF crystal.
  • 14. The method of claim 12, wherein the Faraday optical element comprises a plurality of [113] KTF crystal discs created from the grown or manufactured KTF crystal.
  • 15. The method of claim 14, wherein the plurality of [113] KTF discs comprises six KTF discs.
  • 16. The method of claim 15, wherein each disc rotates light 7.5 degrees for a total of 45 degrees of rotation after light passes through all six [113] KTF discs.
CROSS REFERENCE TO RELATED APPLICATION

The present application claims the filing benefits of U.S. provisional application Ser. No. 62/422,672, filed Nov. 16, 2016, which is hereby incorporated herein by reference in its entirety.

US Referenced Citations (85)
Number Name Date Kind
3666351 Yoh-Han May 1972 A
4178073 Uchida et al. Oct 1979 A
4548478 Shirasaki Oct 1985 A
4575181 Ishikawa Mar 1986 A
4609267 Deguchi et al. Sep 1986 A
4678273 Vilhelmsson Jul 1987 A
4703276 Beer Oct 1987 A
4737006 Warbrick Apr 1988 A
4806885 Morimoto Feb 1989 A
4909612 Scerback et al. Mar 1990 A
4927226 Ortiz, Jr. May 1990 A
4945457 Yazdani et al. Jul 1990 A
5115340 Tidwell May 1992 A
5237445 Kuzuta Aug 1993 A
5291570 Filgas et al. Mar 1994 A
5408354 Hosokawa Apr 1995 A
5469455 Reitz et al. Nov 1995 A
5499132 Tojo et al. Mar 1996 A
5521741 Umezawa et al. May 1996 A
5528415 Gauthier et al. Jun 1996 A
5619602 Sandstrom et al. Apr 1997 A
5627848 Fermann et al. May 1997 A
5715080 Scerbak Feb 1998 A
5745293 Lassalle Apr 1998 A
5793521 O'Brien et al. Aug 1998 A
5835199 Phillips et al. Nov 1998 A
6033515 Walters et al. Mar 2000 A
6088153 Anthon et al. Jul 2000 A
6167177 Sandstrom et al. Dec 2000 A
6212209 Delavaux Apr 2001 B1
6246807 Lu et al. Jun 2001 B1
6430323 Kokkelink et al. Aug 2002 B1
6467972 Setoguchi Oct 2002 B2
6590694 Matsushita et al. Jul 2003 B2
6640027 Kim et al. Oct 2003 B2
6752537 Clarkin et al. Jun 2004 B2
6865318 Hayden et al. Mar 2005 B1
6883975 Clarkin et al. Apr 2005 B2
6950235 Sabia et al. Sep 2005 B2
7057791 Azimi et al. Jun 2006 B2
7099533 Chenard Aug 2006 B1
7306376 Scerbak et al. Dec 2007 B2
7308171 Booth et al. Dec 2007 B2
7426325 Scerbak et al. Sep 2008 B2
8547636 Niessink Oct 2013 B1
8743458 Nicklaus et al. Jun 2014 B2
9268159 Rogers et al. Feb 2016 B2
20010043772 Sorin Nov 2001 A1
20020154666 Vail et al. Oct 2002 A1
20030015348 Lee et al. Jan 2003 A1
20030091260 Chang et al. May 2003 A1
20030095346 Nasu et al. May 2003 A1
20030147136 Pan et al. Aug 2003 A1
20030231690 McDonald Dec 2003 A1
20040027639 Iwatsuka Feb 2004 A1
20040071181 Huang Apr 2004 A1
20040151431 Ukrainczyk Aug 2004 A1
20040240031 Azimi et al. Dec 2004 A1
20040264829 Shou Dec 2004 A1
20050117218 Xiang et al. Jun 2005 A1
20050244101 Kitabayashi et al. Nov 2005 A1
20050257919 White Nov 2005 A1
20060115219 Mudd et al. Jun 2006 A1
20060238864 Iida Oct 2006 A1
20070035930 Sung et al. Feb 2007 A1
20070172174 Scerbak et al. Jul 2007 A1
20070230191 Komuro et al. Oct 2007 A1
20070280620 Matsuda et al. Dec 2007 A1
20080165418 Scerbak et al. Jul 2008 A1
20080298739 Chang et al. Dec 2008 A1
20090091890 Ochi et al. Apr 2009 A1
20100321759 Prucnal et al. Dec 2010 A1
20110069387 Iida Mar 2011 A1
20110133111 Makikawa et al. Jun 2011 A1
20110170830 Uno et al. Jul 2011 A1
20120105931 Deri et al. May 2012 A1
20120155503 Ventrovec Jun 2012 A1
20120194906 Nicklaus et al. Aug 2012 A1
20120212804 Sarkisyan et al. Aug 2012 A1
20120294565 Iida Nov 2012 A1
20130011102 Rinzler et al. Jan 2013 A1
20140139911 Jalali May 2014 A1
20140218795 Scerbak Aug 2014 A1
20150124318 Scerbak May 2015 A1
20170176781 Scerbak et al. Jun 2017 A1
Foreign Referenced Citations (3)
Number Date Country
0492437 Jul 1992 EP
59165020 Sep 1984 JP
WO2014123810 Aug 2014 WO
Non-Patent Literature Citations (14)
Entry
Stevens et al., “Promising Materials for High Power Laser Isolators: Growth of large single-crystals for Faraday rotator and isolator applications”, Laser Technik Journal, vol. 13, Issue 3, published May 12, 2016 (Year: 2016).
Akinaga et al., “Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters” Applied Physics Letters, American Institute of Physics, U.S. vol. 76, No. 1 (Jan. 3, 2000), pp. 97-99.
Buhrer, “Wideband Temperature-Compensated Optical Isolator or Circulator Configuration Using Two Faraday Elements” Optics Letters, Optical Society of America, US, vol. 14, No. 21, (Nov. 1, 1989), pp. 1180-1182.
Carlisle et al., “An optical isolator for mid-infrared diode lasers” Optics Communications, North-Holland Publishing Co. Amsterdam, NL, vol. 74, No. 3-4, (1989) 4 pages.
Gauthier et al., “Simple, Compact, High-Performance Permanent-Magnet Faraday Isolator”, pp. 623-625, vol. 11, No. 10/ Optics Letters, Oct. 1986.
Halbach, “Physical and Optical Properties of Rare Earth Cobalt Magnets”, Nuclear Instruments and Methods 187, pp. 109-117, (1981).
Khazanov et al., “Elimination of thermally induced modal distortions in Faraday isolators for high power laser systems” Lasers and Electro-Optics, (2004), XP032016275, ISBN: 978-1-55752-777-6.
Khazanov, “Investigation of Faraday isolator and Faraday mirror designs for multi-kilowatt power lasers” Proceedings of Spie. vol. 4968, (Jan. 1, 2003) pp. 115-126. XP055035792, ISSN: 0277-786X.
Moshe et al., “Dynamic correction of thermal lensing and birefringence in high-power solid-state lasers” XIII International Symposium on Gas Flow and Chemical Lasers and High-Power Laser Conference (Sep. 18, 2002) pp. 435-438, XP055103296.
Mueller et al., “Method for compensation of thermally induced modal distortions in the input optical components of gravitational wave interferometers” Classical and Quantum Gravity, vol. 19, No. 7, (Apr. 7, 2002), pp. 1793-1801.
Nicklaus et al., “Faraday isolators for high average power fundamental mode radiation” Proceedings of Spie, vol. 7578, (Feb. 11, 2010) p. 75781U, XP055103127 ISSN: 0277-786X DOI: 10.1117/12.842121.
Snetkov et al., “Compensation of thermal effects in Faraday isolator for high average power lasers” Applied Physics B; Laser and Optics Springer Berlin, DE vol. 109, No. 2, (Sep. 21, 2012), pp. 239-247.
Summers et al., “Faraday rotation in indium arsenide” Proceedings of the Physical Society UK, vol. 92, (1967), 12 pages.
Zelenogorsky et al., “Adaptive compensation of thermally induced aberrations in Faraday isolator by means of DKDP crystal” Proceedings of Spie, vol. 5975, (Feb. 15, 2006), pp. 597501-8.
Provisional Applications (1)
Number Date Country
62422672 Nov 2016 US