HIGH POWER SEMICONDUCTOR LASER DEVICE

Abstract

In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoped optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic perspective view illustrating a high power semiconductor laser device according to the prior art;

FIG. 2 is a graph illustrating a band gap and beam mode distribution of a high power semiconductor laser device according to the prior art;

FIG. 3 is a schematic perspective view illustrating a high power semiconductor laser device according to an embodiment of the invention;

FIG. 4 is a graph illustrating a band gap and beam mode distribution of a high power semiconductor laser device according to another embodiment of the invention;

FIG. 5 a is a graph illustrating output characteristics of a high power semiconductor laser device manufactured according to further another embodiment of the invention; and

FIG. 5 b is a graph illustrating voltage-current characteristics of a high power semiconductor laser device manufactured according to further another embodiment of the invention.

Claims

1. A semiconductor laser device comprising: first and second conductivity type clad layers;an active layer interposed between the first and second conductivity type clad layers;a first optical guide layer disposed between the first conductivity type clad layer and the active layer;a second optical guide layer disposed between the second conductivity clad layer and the active layer; andan intentionally undoped optical loss confinement region formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

2. The semiconductor laser device according to claim 1, wherein the optical loss confinement region is adjacent to the first or second optical guide layer.

3. The semiconductor laser device according to claim 1, wherein the optical loss confinement region is formed in both the first and second conductivity type clad layers.

4. The semiconductor laser device according to claim 1, wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 80% of the laser beam distribution.

5. The semiconductor laser device according to claim 4, wherein the optical loss confinement region, the active layer and the first and second optical guide layers have a thickness that occupies at least 90% of the laser beam distribution.

6. The semiconductor laser device according to claim 4, wherein the optical loss confinement region has a thickness of about 10 nm to about 300 μm.

7. The semiconductor laser device according to claim 1, wherein the optical loss confinement region has a doping concentration of 1017/cm3 or less.