The present invention relates to a voltage regulator and more particularly relates to a voltage regulator having a high-speed feedback loop and a charge compensation scheme for further reducing a settling time of the voltage regulator.
A voltage regulator is a device that provides a regulated voltage that remains substantially constant as load current and supply voltage change. Typically, a voltage regulator includes a large pass transistor to pass current into the load, and the regulator is stabilized externally using a large external capacitor, such as a 0.1 μF to 1 μF capacitor, and a small on-chip metal resistance. However, the large external capacitor increases the parts count, increases the cost of the voltage regulator and dramatically reduces the regulator's bandwidth of operation.
Instead of using a large external capacitor, the voltage regulator may be stabilized by connecting a Miller capacitor from the gate of the large pass transistor to the drain of the large pass transistor. While the Miller capacitor provides a compact method of stabilizing the voltage regulator, it passes high frequencies and therefore significantly reduces the Power Supply Rejection Ratio (PSRR) of the regulator. Further, the voltage regulator stabilized by the Miller capacitor has a very low frequency response, approximately 10 KHz–100 KHz. Accordingly, in systems that operate above 100 KHz, the voltage regulator may require more than one clock cycle to settle the regulated voltage to its desired value each time the load current changes. Requiring more than one clock cycle to settle the regulated voltage introduces errors into systems where the regulator is used as a voltage reference for signal processing blocks and is therefore undesirable, especially in wireless communications environments. It should be noted that this technique also reduces the regulator's bandwidth of operation.
Thus, there remains a need for a voltage regulator that is stabilized by an on-chip capacitor and that has both a fast settling time and a high PSRR.
The present invention provides a voltage regulator including a high-speed feedback loop operating to provide rapid settling time and a large Power Supply Rejection Ratio (PSRR). The high-speed feedback loop includes a reservoir capacitor that stores charge based on a charging current. The charge stored by the reservoir capacitor corresponds to a regulated voltage provided by the voltage regulator. When charge is drawn from the reservoir capacitor by a load, a dip occurs in the regulated output voltage. The high-speed feedback loop operates to restore the charge to the reservoir capacitor, thereby restoring the regulated voltage to its desired value. More specifically, when charge is drawn from the reservoir capacitor, the high-speed feedback loop operates to rapidly increase the charging current, thereby rapidly restoring charge to the reservoir capacitor.
The high-speed feedback loop includes a current mirror having a current mirror gain ratio. The current mirror operates based on a reference current that is inversely related to the regulated output voltage. Accordingly, when there is a dip in the regulated output voltage, the reference current increases. Based on the reference current and the current mirror gain ratio, the current mirror operates to increase the charging current and thereby restore the regulated output voltage to its desired value. In one embodiment, the current mirror gain ratio is greater than one such that an increase in the reference current results in a larger increase in the charging current, thereby providing rapid charging of the reservoir capacitor.
In one embodiment, the voltage regulator is employed in a system implementing a charge compensation scheme that further reduces the settling time of the voltage regulator caused by charge injection from a digital bit stream representation of a signal. In general, the system includes the voltage regulator, a digital signal interface, and a reconstruction filter. The digital signal interface receives a data bit stream representation of a data signal and operates to re-time the data signal to provide a low jitter digital signal. This low jitter digital signal is used to cause the voltage regulator to be sampled by the reconstruction filter in either an inverting or noninverting manner based the value of the digital signal. The reconstruction filter operates as an interface between the digital and the analog domains. More particularly, the reconstruction filter samples the regulator during a sampling period and thereafter processes and filters the sampled regulator charge based on the digital signal to provide an analog output signal.
To implement the charge compensation scheme, the system also includes sampling charge compensation circuitry and data acquisition charge compensation circuitry. The sampling charge compensation circuitry operates restore charge to a reservoir capacitor in the voltage regulator as charge is being taken from the reservoir capacitor by the reconstruction filter during the sampling phase. The data acquisition charge compensation circuitry operates to restore charge to the reservoir capacitor as charge is being taken from the reservoir capacitor by the data interface when the digital signal transitions between a first logic state and a second logic state. Thus, the charge compensation scheme provides charge compensation to the reservoir capacitor during the sampling phase of the reconstruction filter and at the moment the digital signal transitions between the first logic state and the second logic state.
Those skilled in the art will appreciate the scope of the present invention and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in association with the accompanying drawing figures.
The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the invention, and together with the description serve to explain the principles of the invention.
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the invention and illustrate the best mode of practicing the invention. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the invention and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
When no charge is drawn from the reservoir capacitor 20 by an external circuit connected to the regulated voltage (VREG), the output transistor 18 draws a current I2 based on a DC bias and the charge stored across the reservoir capacitor 20, which corresponds to the regulated voltage (VREG). The transistor 28 in the current mirror 22 sinks a current I3, and the transistor 30 in the current mirror 22 provides a current I4, where the current I4 is defined as the current I3 multiplied by a current mirror gain ratio (M). The current mirror gain ratio (M) may be any number greater than zero. However, in one embodiment, the current mirror gain ratio (M) is greater than one. When no charge is drawn from the reservoir capacitor 20, the current I4 is essentially equal to the current I2 such that the current I1 is essentially zero and the charge on the reservoir capacitor 20 remains constant.
When charge is drawn from the reservoir capacitor 20, there is a dip in the regulated voltage (VREG). The instantaneous effect of this voltage dip is to reduce a voltage from the gate to the source of the output transistor 18, thereby reducing the current I2. The current sources 26 is biased to produce a current I5, where the current I5 is a constant current. Thus, the reduction in the current I2 causes an instantaneous increase in the current I3 such that the sum of the currents I2 and I3 is essentially equal to the constant current I5. In response to the increase in the current I3, the current mirror 22 operates to increase the current I4. The increase in the current I4 is essentially equal to the increase in the current I3 multiplied by the current mirror gain ratio (M). By increasing the current I4, the current I4 becomes larger than the current I2. Accordingly, the current I1 increases and is essentially equal to I4−I2. The current I1 builds charge in the reservoir capacitor 20. As the charge in the reservoir capacitor 20 increases, the current I2 increases, thereby causing a decrease in the currents I3, I4, and I1.
Once the current I2 has increased to a point where the current I2 is essentially equal to the current I4, the reservoir capacitor 20 is charged to a point where the regulated voltage (VREG) is restored to its desired value. It should be noted that the desired value of the regulated voltage (VREG) is constant such that the regulated voltage (VREG) is always restored to the same voltage. The time between the initial discharging of the reservoir capacitor 20 and the restoration of the regulated voltage (VREG) to its desired value is called the “settling time” of the voltage regulator 10. It should be noted that the settling time and bandwidth of the voltage regulator 10 depends on the current mirror gain ratio (M), the capacitance of the reservoir capacitor 20, and the transconductance (gm) of the output transistor 18. Accordingly, the capacitance of the reservoir capacitor 20 the current mirror gain ratio (M) and the gm of output transistor 18 are selected to provide the desired bandwidth and settling time. In one embodiment, the reservoir capacitor 20 is a 10 pF capacitor and the voltage regulator 10 settles to within 1 mV of the desired regulated voltage (VREG) within 3 ns.
As an example, if the current source 26 is biased such that 15 is 500 μA and the current mirror gain ratio (M) is 1.5, then the currents I2 and I4 are essentially equal to 300 μA and the current I3 is essentially equal to 200 μA when no charge is being drawn from the reservoir capacitor 20. Each time charge is drawn from the reservoir capacitor 20 by a load (not shown) connected to the regulated voltage (VREG), a dip in the regulated voltage (VREG) occurs. The dip in the regulated voltage (VREG) causes an instantaneous reduction in the current I2 proportional to the transconductance (gm) of the output transistor 18. For example, the current I2 may be reduced to 200 μA. In order to provide the 500 μA current I5, the current I3 increases to 300 μA. As a result of the increase in the current I3 and the current mirror gain ratio of 1.5, the current I4 increases to 450 μA. Since the current I2 and I4 are no longer equal, the current I1 is no longer zero and is 250 μA (450 μA−200 μA). The current I1 builds charge in the reservoir capacitor 20, thereby increasing the regulated voltage (VREG). As the charge in the reservoir capacitor 20 increases, the current I2 also increases, thereby decreasing I3, I4, and I1. Once the current I2 has increased back to 300 μA, the current I4 is also 300 μA, and the regulated voltage (VREG) is restored to its desired value.
The high-speed feedback loop 12 also includes a bypass capacitor 32 and compensation capacitor 34. The bypass capacitor 32 bypasses the gate of cascode transistor 24. The pole created by the bypass capacitor 32 is not part of the high-speed loop 12. Rather, the bypass capacitor 32 improves high frequency PSRR of the voltage regulator 10. The compensation capacitor 34 compensates the voltage bias circuitry 14 and helps isolate the high speed loop 12 from the slower voltage bias circuitry 14.
The voltage regulator 10 also includes the voltage bias circuitry 14. The voltage bias circuitry 14 operates to generate the DC bias from a stable bandgap voltage (VBG) and to provide DC bias for the output transistor 18. The illustrated embodiment of the voltage bias circuitry 14 includes an operational amplifier 36, a feedback resistor 38, an input resistor 40, an output matching transistor 41, a current source transistor 42, and a diode connected transistor 43. Operational amplifier 36 is in a non-inverting mode and provides a closed loop gain equal to 1+RF/RIN. Thus, the values RF and RIN can be selected such that the bandgap voltage (VBG) is amplified to provide the desired regulator output voltage (VREG). For example, if the desired regulator output voltage (VREG) is 2.5 V and the bandgap voltage is 1.215 V, the values RF and RIN can be selected to provide a gain of 1.0575. The matching output transistor 41 is a smaller version of the output transistor 18 and is biased by the current source 42 to have the same current density and thus the same gate to source voltage (VGS) as output transistor 18. The matching of the transistor 41 to the output transistor 18 produces a DC bias output such that the VGS of the output transistor 18 will add to the DC bias voltage to replicate the desired regulator output voltage (VREG). The feedback resistor 38 is bypassed by a capacitor 44. The value of the capacitor 44 is selected to create a zero at a frequency that offsets a pole created by the feedback resistor 38 and the input capacitance of the operational amplifier 36. As discussed above, the high-speed feedback loop 12 includes the compensation capacitor 34 that compensates the operational amplifier 36. Further, the voltage bias circuitry 14 includes a resistor 46 in series with the output of the operational amplifier 36, wherein the resistor 46 is a zero nulling resistor. It should also be noted that the output transistor 18 of the high-speed feedback loop 12 is not in the feedback loop of the operational amplifier 36. Instead, the matching transistor 41 in conjunction with the operational amplifier 36 generates the DC bias voltage for the output transistor 18. Accordingly, the bandwidth of the high-speed feedback loop 12 can be set by the designer and is not limited to the unity gain bandwidth of the operational amplifier 36.
The voltage regulator 10 also includes the current bias circuitry 16. The current bias circuitry 16 operates to provide the bias voltages to the current source 26 and the cascode transistor 24 based on a bias input signal (IBIAS). In addition, the current bias circuitry 16 may also operate based on the enable signal (EN) to either activate or deactivate the high-speed feedback loop 12 based on the enable signal (EN). In general, the current bias circuitry 16 operates to bias the current source 26 and the cascade transistor 24 such that they remain in saturation. There are numerous ways to implement the current bias circuitry 16 which will be appreciated by one of ordinary skill in the art, and the exact details of the current bias circuitry 16 will depend upon the particular implementation.
Thus, the reconstruction filter 56 acts as an interface between the digital and analog domains. In one embodiment, the reconstruction filter 56 is a partially a discrete-time switched-capacitor reconstruction filter, which is much more immune to clock jitter than a continuous time reconstruction filter. However, any reconstruction filter 56 is very sensitive to data dependent voltage regulator amplitude variation, often referred to as data dependent regulator amplitude modulation (AM). For example, in one embodiment, a data dependent voltage regulator AM in the region of 1 mVpp can create a degraded noise floor of about 90–95 dBc at the reconstruction filter output. Accordingly, in this embodiment, the reconstruction filter 56 is sensitive to variations in the amplitude, or magnitude, of the regulated voltage (VREG) at the time it is sampled.
In operation, the reconstruction filter 56 receives the non-overlapping clock signals φ1 and φ2, and operates to sample the voltage regulated differential signal (signalA and signalb) during φ1 and to process the sampled signal during φ2. Each time the reconstruction filter 56 samples the differential signal (signalA and signalB) during φ1, switches are closed in the reconstruction filter 56 and charge is drawn from the data interface 54, which results in discharging of the reservoir capacitor 20 (
However, when considering silicon process variations, the settling time of the voltage regulator 10 may be prolonged. In some situations, the settling time may be prolonged such that it approaches the end of the half clock cycle of φ1. Thus, according to another embodiment of the present invention, the data interface 54 further provides a charge compensation scheme that assists the voltage regulator 10 in restoring charge to the reservoir capacitor 20, thereby further reducing the settling time of the voltage regulator 10.
Before discussing the charge compensation scheme, it may be beneficial to discuss two sources of voltage regulator AM. First, in the delta-sigma D/A converter 50, the data signal (DATA) switches only between logic 0 and logic 1. However, the data signal (DATA) does not always change each clock cycle. The Delta Sigma Modulator 52 changes the data signal (DATA) in a random or noise like manner with the low frequency average of the states proportional to the digital input signal (DIGITAL INPUT SIGNAL). When the data signal (DATA) changes states, a large amount of charge is either drawn or sunk from the reservoir capacitor 20 (
A second possible source of voltage regulator AM is the sampling operation of the reconstruction filter 56 during φ1 of the clock. The switched-capacitor reconstruction filter 56 samples differential signal (signalA, signalB) during φ1 of the clock. It is at the end of this part of the clock that noise and voltage reference AM on the signal must be kept to a minimum. During φ1 of the clock, charge is transferred from the data interface 54 to a sampling network (not shown) of the reconstruction filter 56. This charge will be drawn or sunk from the reservoir capacitor 20 (
Accordingly, the data interface 54 employs a charge compensation scheme of the present invention for restoring charge to the reservoir capacitor 20 (
The sampling phase charge compensation circuitry 62 operates to provide charge compensation during the sampling phase of the reconstruction filter 56, which is when the clock signal φ1 is asserted. More specifically, the sampling phase charge compensation circuitry 62 operates to assist the voltage regulator 10 (
The data acquisition charge compensation circuitry 64 operates to provide replenishing charge to the reservoir capacitor 20 (
Similarly to the sampling phase charge compensation circuitry 62, the data acquisition charge compensation circuitry 64 provides replenishing charge to the reservoir capacitor 20 from the supply voltage (VDD). In one embodiment, the supply voltage (VDD) is from a regulator other than the voltage regulator 10 and that is not sampled by the reconstruction filter 56. Thus, the regulated voltage (VREG) that is sampled by the reconstruction filter 56 is not corrupted by voltage drops in the supply voltage (VDD) associated with the operation of the data acquisition charge compensation circuitry 64.
In operation, the NOR gate 68 receives the positive component (φ1P) of the clock signal φ1 and the negative component (φ2N) of the clock signal φ2. When either φ1P or φ2N is logic 1, or “high,” the logic gates 68–84 operate to turn on the transistors 86 and 88 and turn off the transistor 90 and 92 such that replenishing charge is supplied from the compensation capacitor 66 to the regulated voltage (VREG) and thus the reservoir capacitor 20 (
The transistors 86 and 88 and the compensation capacitor 66 are sized such that they duplicate an RC time constant of the sampling circuit of the reconstruction filter 56. Further, the transistors 86, 88, and 92 are made of essentially the same material as sampling switches in the sampling circuitry of the reconstruction filter 56 and are sized such that their gate-source capacitance (Cgs) is identical to the corresponding device in the sampling circuit. Additionally, the compensation capacitor 66 is sized such that it can replenish essentially the same amount of charge to the reservoir capacitor 20 of the voltage regulator 10 as that taken from the reservoir capacitor 20 by the sampling circuit during the sample phase φ1. It should also be noted that in this embodiment the bulk terminals of the transistors 86, 88, and 92 are tied to the supply voltage (VDD) such that glitches caused by the charging and discharging of bulk-drain, bulk-gate and bulk-source capacitance are seen on the supply voltage (VDD) rather than the regulated voltage (VREG).
It should be noted that the non-overlapped gate drive is essentially a “break-before-make” switch which shuts off the transistors 86 and 88 before turning on the transistor 90 and 92, thereby practically removing all shoot though currents. The amount of delay between shutting off the transistors 86 and 88 and turning on the transistor 90 and 92 is determined by the number of inverters 74–78 and 80–84. It should also be noted that traditional inverters could alternatively be used instead of non-overlapping switches 86 and 90. However, traditional inverters will create high shoot-through currents each time the output of the NOR gate 68 switches logic states.
In the first circuitry 94, the non-overlapping gate drive inverter includes logic gates 100A–114A and transistors 116A and 120A. In operation, when the positive component (DATAA) transitions from logic 1 to logic 0, or from “high” to “low,” the logic gates 100A–114A operate to turn the transistors 116A and 118A on and the transistor 120A and 122A off such that replenishing charge is supplied from the compensation capacitor 98A to the regulated voltage (VREG) and thus the reservoir capacitor 20 (
Similarly, in the second circuitry 96, the non-overlapping gate drive inverter includes logic gates 100B–114B and transistors 116B and 120B. In operation, when the negative component (DATAB) transitions from logic 1 to logic 0, or from “high” to “low,” the logic gates 100B–114B operate to turn the transistors 116B and 118B on and the transistor 120B and 122B off such that replenishing charge is supplied from the compensation capacitor 98B to the regulated voltage (VREG) and thus the reservoir capacitor 20 (
Thus, the combined effect of the first circuitry 94 and the second circuitry 96 is to provide charge compensation at the moment the differential signal (DATAA, DATAB) transitions between the logic states. More specifically, by providing circuits 94 and 96 the data-based charge compensation occurs on both the rising and falling edges of the input data.
In both the first circuitry 94 and the second circuitry 96, the transistors 116, 118 and the compensation capacitor 98 are sized such that a resultant RC time constant matches an RC time constant of the charge drawn from the reservoir capacitor 20 of the voltage regulator 10 (
It should be noted that in both the first circuitry 94 and the second circuitry 96 the non-overlapped gate drives are essentially “break-before-make” switches which shut off the transistors 116 and 118 before turning on the transistor 120 and 122, thereby practically removing all shoot though currents. It should also be noted that traditional inverters could alternatively be used. However, traditional inverters will create high shoot-through currents each time the component (DATAA or DATAB) switches logic state.
Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present invention. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.
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