Claims
- 1. A magnetic recording medium comprising:an on-magnetic substrate; a chromium manganese (CrMn) underlayer on the substrate; and a magnetic layer, comprising an alloy of cobalt-chromium-platinum-tantalum, on the underlayer, wherein the magnetic layer has a (11{overscore (2)}0)-dominant crystallographic orientation, the CrMn underlayer has a (200)-dominant crystallographic orientation and the magnetic recording medium has a: Hr greater than about 3000 Oersteds; S* greater than about 0.85; and SNR greater than about 24 dB @240 kfci.
- 2. The magnetic recording medium according to claim 1, wherein the CrMn underlayer contains about 0.1 to about 50 at. % Mn.
- 3. The magnetic recording medium according to claim 2, wherein the CrMn underlayer contains about 10 to about 25 at. % Mn.
- 4. The magnetic recording medium according to claim 1, wherein the underlayer has a thickness of about 10 Å to about 1000 Å.
- 5. The magnetic recording medium according to claim 4, wherein the underlayer has a thickness of about 100 Å to about 600 Å.
- 6. The magnetic recording medium according to claim 1, wherein the substrate comprises a nickel phosphorous-plated aluminum or aluminum alloy substrate.
- 7. The magnetic recording medium according to claim 1, wherein the CrMn underlayer was sputter deposited at a substrate bias with an absolute value greater than about −300 volts.
- 8. A method of manufacturing a magnetic recording medium, the method comprising:sputter depositing a chromium manganese (CrMn) underlayer on a non-magnetic substrate while applying a negative substrate bias greater than about 300 volts; and depositing a magnetic layer, containing a cobalt-chromium-platinum-tantalum alloy, on the underlayer, wherein the magnetic layer has a (11{overscore (2)}0)-dominant crystallographic orientation, the CrMn underlayer has a (200)-dominant crystallographic orientation and the magnetic recording medium has a: Hr greater than about 3000 Oersteds; S* greater than about 0.85; and SNR greater than about 24 dB @240 kfci.
- 9. The method according to claim 8, comprising depositing the underlayer on the non-magnetic substrate at a substrate bias between about −300 volts and about −1000 volts.
- 10. The method according to claim 9, comprising sputter depositing the CrMn underlayer at a substrate bias between about −300 volts and about −500 volts.
- 11. The method according to claim 10, comprising sputter depositing the CrMn underlayer at a substrate bias between about −300 volts and about −400 volts.
- 12. The method according to claim 9, wherein the CrMn underlayer contains about 0.1 to about 50 at. % manganese.
- 13. The method according to claim 12, wherein the CrMn underlayer contains about 10 to about 25 at. % manganese.
RELATED APPLICATIONS
This application claims priority from Provisional Application Serial No. 60/069,367, filed Dec. 12, 1997 entitled “HIGH SUBSTRATE BIAS SPUTTERING UNDERLAYER DESIGN FOR LONGITUDINAL RECORDING MEDIA”, the entire disclosure of which is hereby incorporated herein by reference.
US Referenced Citations (8)
Provisional Applications (1)
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Number |
Date |
Country |
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60/069367 |
Dec 1997 |
US |